CN100573923C - Silicon base efficient multi-node solar battery and preparation method thereof - Google Patents
Silicon base efficient multi-node solar battery and preparation method thereof Download PDFInfo
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- CN100573923C CN100573923C CNB2008100184071A CN200810018407A CN100573923C CN 100573923 C CN100573923 C CN 100573923C CN B2008100184071 A CNB2008100184071 A CN B2008100184071A CN 200810018407 A CN200810018407 A CN 200810018407A CN 100573923 C CN100573923 C CN 100573923C
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a kind of silicon base efficient multi-node solar battery, comprise the sub-battery of a top layer, a middle subcell and the sub-battery of a bottom, connect and compose the structure that is connected in series through tunnel junction between each sub-battery, it is characterized in that: the sub-battery of described bottom is the PN junction battery of Si, described middle subcell is the PN junction battery of GaAs, the sub-battery of described top layer is the PN junction battery of GaInP, and each sub-battery and syndeton are therebetween directly grown on silicon monocrystalline substrate and formed.The present invention can make full use of the production technology of existing silicon solar cell maturation, has solved Si and the unmatched problem of GaAs lattice, can improve more than the conversion efficiency to 28%, surpasses the theoretical limit of existing Si solar cell.
Description
Technical field
The present invention relates to the device that a kind of radiation energy with sunlight is converted into electric energy, and the method for making this device, be specifically related to a kind of silicon base efficient multi-node solar battery, especially respectively with Si, GaAs (P), InGaP homogeneous pn junction are stacked multijunction solar cell of photoelectricity conversion coating and preparation method thereof.
Background technology
Solar cell is the grand strategy approach that solves energy issue of world.Mass-produced in the market solar cell is monocrystalline and polycrystalline silicon solar cell, and its average efficiency is about in the of 15%, that is to say that solar cell can only convert 15% of the solar energy of incident to available electrical energy, and remaining 85% all is converted into heat energy.The generation of heat energy not only causes the huge waste of the energy, has also brought this technical problem of heat radiation, has increased the cost of manufacture of solar cell greatly.And the Theoretical Physics limit of the conversion efficiency of the solar cell of unijunction single crystal silicon material is 25%, and the transformation efficiency of remaining polysilicon and non-crystal silicon solar cell all is lower than this numerical value.The transformation efficiency that how further to improve silicon solar cell on existing basis has important economic implications.
The conversion efficiency height of compound semiconductor materials battery has very good band gap and higher efficiency of light absorption as the GaAs compound-material, and the conversion efficiency of the single junction cell made from GaAs can reach 28%.By being used of different band-gap compounds, can further improve the conversion efficiency of battery, as, the efficient of GaInP/GaAs/Ge multijunction cell has reached 32%.But, because compound semiconductor materials battery cost is too high, so this multijunction cell efficiently as is used for the power supply of aerospace vehicle mainly towards high-end applications at present.And, though GaInP/GaAs/Ge multijunction cell efficient height, but still have two difficult problems, at first, the electric current of three knot series connection photovoltaic cells also not exclusively mates, and the electric current of Ge knot is the twice of other two son knots.Can introduce a kind of energy gap in theory between Ge and GaAs battery is that the semiconductor photovoltaic cells with lattice constant match GaAs or Ge 1.0ev solves this problem, using GaInAsN is one of them selection, but the growth course of GaInAsN harshness makes that its quality of materials is difficult to guarantee, thereby does not also find the ideal scheme that solves the current mismatch problem at present.The 2nd Ge belongs to rare metal, and its cost an arm and a leg (at present about 8000 yuan of per kilograms, and the price of silicon ingot is about 80 dollars of per kilograms), and also the Ge wafer size that can produce now is little, has further increased manufacturing cost.
How to improve the conversion efficiency of silicon solar cell and break through its theoretical limit significantly; How reducing the compound semiconductor materials battery cost and solving corresponding production technology is the common issue with that photovoltaic industry faces.
Summary of the invention
The objective of the invention is, develop a kind of silicon base efficient multi-node solar battery, to solve in the prior art, unijunction solar cell conversion efficiency is lower, and adopts the big problem of cost height, manufacture difficulty of the multijunction solar cell existence of Ge.
To achieve the above object of the invention, the present invention has developed the multijunction cell of novel GaInP/GaAs (P)/Si structure, with silicon as substrate,, found to solve the active balance point that the silicon solar cell conversion efficiency is low, compound semiconductor materials battery cost is high as main absorbing material with compound semiconductor materials.
Concrete scheme of the present invention is as follows: a kind of silicon base efficient multi-node solar battery, comprise the sub-battery of a top layer, a middle subcell and the sub-battery of a bottom, connect and compose the structure that is connected in series through tunnel junction between each sub-battery, the sub-battery of described bottom is the PN junction battery of Si, described middle subcell is the PN junction battery of GaAs, the sub-battery of described top layer is the PN junction battery of GaInP, and each sub-battery and syndeton are therebetween directly grown on silicon monocrystalline substrate and formed.
In the technique scheme, the syndeton between sub-battery of described bottom and middle subcell is from bottom to top by GaP layer, Ga
xIn
1-xP gradual transition layer, tunnel junction constitute described Ga
xIn
1-xIn the P gradual transition layer, x is changed to 0.5 by 1.
Further technical scheme, P mixes in the GaAs of described middle subcell.Existing studies show that, the P that mixes in GaAs can change the band gap of GaAs solar cell, thus, by the control to P content, can increase the coverage of multijunction cell of the present invention to convertible solar radiation wavelength, thereby improves conversion efficiency.
The preparation method of silicon base efficient multi-node solar battery of the present invention comprises the following steps:
(1) monocrystalline substrate that adopts the p type to mix is as the base of Si solar cell, with the highly doped GaP layer of MOCVD method growth growing n-type, utilize the high temperature in the growth course, make the P atom diffusion, form highly doped n type layer, form Si solar cell emitter region on the Si surface;
(2) the highly doped Ga of growing n-type
xIn
1-xP gradual change gradual transition layer, wherein the In component is changed to 0.5 by 0, and Ga reduces to 0.5 by 1;
(3) growth degeneracy n type doping content 1 * 10
19Cm
-3Above Ga
0.5In
0.5P or GaAs layer, regrowth degeneracy p type doping content 8 * 10
19Cm
-3Above Al
0.3Ga
0.7As layer or Ga
0.5In
0.5The P layer forms a tunnel junction;
(4) growth GaAs solar cell;
(5) growth tunnel junction;
(6) growth GaInP solar cell;
(7) the GaAs contact layer of growing n-type high-dopant concentration is as ohmic contact;
(8) prepare each electrode layer, obtain required solar cell.
Because the employing of technique scheme is compared with existing solar cell, the present invention has following advantage:
1. the present invention, can combine with the Si single-chip production technology of maturation as substrate with silicon, reduces cost effectively;
Consider that present Si single-chip realized large-scale industrial production, as epitaxial substrate is only material, and it is very ripe with the preparation technology (aspects such as etching, polishing, cleaning, diffusion and electrode preparation) of Si material (1.1ev) making opto-electronic conversion pn knot, relevant device is comprehensive, also is unusual desirable material as photoelectric conversion material Si.The multijunction cell of novel GaInP/GaAs of the present invention (P)/Si structure, Ge knot in the existing three-junction solar battery of cancellation, dynatron is tied GaAs (P) and top layer knot GaInP to be grown directly upon on the Si substrate and to be together in series, like this can be in conjunction with production technology maturation, cheap Si single-chip and the manufacturing process of Si solar cell, growth broad-band gap photoelectric conversion layer effectively absorbs high-energy photons on Si.Ge is as rare element, and cancellation Ge substrate also has the important strategic meaning.
2. the present invention has introduced new GaP layer, and perfection has solved the lattice mismatch and the current mismatch problem of existing compound semiconductor materials battery
Consider Si lattice constant (5.4309
) and GaAs (5.6325
) difference is bigger, introduce and the very little GaP (5.4487 of Si lattice constant difference
) layer and regulate the In that grows successively by component
xGa
1-xP thin layer (x:0～0.5, lattice constant: 5.4487
～5.6600
) solve Si and the unmatched problem of GaAs lattice as the gradual transition layer, reduce the stress between layer and the layer greatly, improve the solar cell quality effectively.Simultaneously, owing to cancelled the Ge layer, solved the current mismatch problem of existing compound semiconductor materials battery.
3. multijunction cell of the present invention combines the substrate function and the photoelectricity transformation function of Si monocrystal material, has simplified the solar cell production technology widely.
The present invention directly grow on the Si single crystalline substrate GaAs (P) and GaInP photoelectricity conversion coating, the Si substrate forms the effect that PN junction is realized photoelectric conversion layer simultaneously in manufacture process.Directly the P atom in the GaP layer that contacts with Si can be diffused in the p type Si substrate by later stage technology and form PN junction as donor doping, and this measure unites two into one growth technique and the Si-PN knot manufacture craft of GaP, reduces processing step, saves cost.
4. the P element of introducing certain content in the dynatron knot GaAs of battery forms GaAsP and regulates its band gap, can improve InGaP solar cell and Si solar cell tandem junction altogether more than the conversion efficiency to 28%, surpasses the theoretical limit of existing Si solar cell.
Description of drawings
Fig. 1 is the hierarchical structure schematic diagram of the solar cell of the embodiment of the invention one acquisition.
Wherein: 1, the sub-battery of bottom; 2, gradual transition layer; 3, tunnel junction; 4, middle subcell; 5, tunnel junction; 6, the sub-battery of top layer; 7, contact layer.
Embodiment
Below in conjunction with embodiment the present invention is further described, but should limit protection scope of the present invention with this:
Embodiment one: shown in accompanying drawing 1, a kind of preparation method of silicon base efficient multi-node solar battery comprises the following steps:
One, the monocrystalline substrate that adopts the p type to mix, thickness is about 100 to 150 microns, and concentration is 5 * 10
15Cm
-3To 10
17Cm
-3Between, as the base of Si solar cell, substrate surface can spread 1 * 10 earlier
-19Cm
-3Above boron, highly doped P type silicon layer stop the base light induced electron compound by back electrode as the back of the body field of solar cell;
Two, enter the MOCVD growth, the highly doped GaP layer of n type of about 0.2 micron thickness of one deck of growing earlier, the lattice constant of GaP and Si substrate are close, because the high temperature in growth course, make all oriented Si diffusion of Ga and P atom, and the P ratio is easier to diffusion, forms the highly doped about 0.1 micron n type layer of thickness on the Si surface automatically, forms Si solar cell emitter region; Thereby obtain the sub-battery 1 of bottom;
Three, the highly doped Ga of about 2 micron thickness n types
xIn
1-x2 growth of P gradual transition layer, the In component is changed to 0.5 by 0, and Ga reduces to 0.5 by 1, until the Ga that forms lattice constant and GaAs coupling
0.5In
0.5P, regeneration is about the highly doped Ga of n type of 0.2 micron thickness
0.5In
0.5The P layer;
Four, growth degeneracy n type doping content is up to 1 * 10
19Cm
-3The Ga of above about 0.01 micron thickness
0.5In
0.5P or GaAs layer, regrowth degeneracy p type doping content is up to 8 * 10
19The Al of about 0.01 micron thickness that cm-3 is above
0.3Ga
0.7As layer or Ga
0.5In
0.5The P layer forms a tunnel junction 3, makes GaAs solar cell and silicon solar cell form series connection;
Five, the GaInP layer of the n type high-dopant concentration of about 0.07 micron thickness of growth as the back of the body field of GaAs solar cell, stops the light induced electron of base to be diffused into GaAs solar cell hearth electrode;
Six, the growing p-type doping content about 10
17Cm
-3The GaAs layer of about 3.5 micron thickness, as the base of GaAs solar cell, regrowth n type doping content about 10
18Cm
-3The GaAs layer of about 0.1 micron thickness, as the emitter region of GaAs solar cell;
Seven, the highly doped GaInP layer of n type of about 0.1 micron thickness of growth prevents that as the window and the surface passivation layer of GaAs solar cell the photohole charge carrier is diffused into the top electrode of GaAs solar cell; Form middle subcell 4 thus;
Eight, growth degeneracy n type doping content is up to 1 * 10
19Cm
-3The Ga0.5In0.5P of above about 0.01 micron thickness, regrowth degeneracy p type doping content is up to 8 * 10
19Cm
-3The Al of above about 0.01 micron thickness
0.3Ga
0.7As layer or Ga
0.5In
0.5P forms a tunnel junction 5, makes GaAs solar cell and InGaP solar cell form series connection;
Nine, the GaInP layer of the p type high-dopant concentration of about 0.07 micron thickness of growth, the energy gap of this GaInP should be bigger slightly than the base of InGaP solar cell, can adopt orderly InGaP structure, as the back of the body field of InGaP solar cell, stop the light induced electron of base to be diffused into InGaP solar cell hearth electrode;
Ten, the growing p-type doping content about 10
17Cm
-3About 0.8 micron (AM1.5) or 0.5 micron (AM0) thick InGaP layer, as the base of InGaP solar cell, regrowth n type doping content about 10
18Cm
-3The InGaP layer of about 0.1 micron thickness, as the emitter region of InGaP solar cell;
11, the n type high-dopant concentration AlInP layer of about 0.025 micron thickness of growth as the Window layer and the surface passivation layer of InGaP solar cell, prevents that the photohole charge carrier is diffused into the top electrode of InGaP battery; Form the sub-battery 6 of top layer;
12, the GaAs contact layer 7 of the n type high-dopant concentration of about 0.5 micron thickness of growth is used for ohmic contact.
The hierarchical structure of thus obtained multijunction solar cell as shown in Figure 1.
The solar cell that present embodiment obtains is tested, and the result shows that its conversion efficiency has surpassed the limiting efficiency of silicon greater than 28%.
Claims (2)
1. silicon base efficient multi-node solar battery, comprise the sub-battery of a top layer (6), a middle subcell (4) and the sub-battery of a bottom (1), connect and compose the structure that is connected in series through tunnel junction between each sub-battery, the sub-battery of described bottom (1) is the PN junction battery of Si, described middle subcell (4) is the PN junction battery of GaAs, the sub-battery of described top layer (6) is the PN junction battery of GaInP, it is characterized in that: each sub-battery and syndeton are therebetween directly grown on silicon monocrystalline substrate and are formed; Syndeton between sub-battery of described bottom (1) and middle subcell (4) is from bottom to top by GaP layer, Ga
xIn
1-xP gradual transition layer (2), tunnel junction (3) constitute described Ga
xIn
1-xIn the P gradual transition layer, x is changed to 0.5 by 1.
2. the preparation method of a silicon base efficient multi-node solar battery is characterized in that, comprises the following steps:
(1) monocrystalline substrate that adopts the p type to mix as the base of Si solar cell, with the highly doped GaP layer of MOCVD method growing n-type, is utilized the high temperature in the growth course, makes the P atom diffusion, forms highly doped n type layer on the Si surface, forms Si solar cell emitter region;
(2) the highly doped Ga of growing n-type
xIn
1-xP gradual transition layer, wherein the In component is changed to 0.5 by 0, and Ga reduces to 0.5 by 1;
(3) growth degeneracy n type doping content 1 * 10
19Cm
-3Above Ga
0.5In
0.5P or GaAs layer, regrowth degeneracy p type doping content 8 * 10
19Cm
-3Above Al
0.3Ga
0.7As layer or Ga
0.5In
0.5The P layer forms a tunnel junction;
(4) growth GaAs solar cell;
(5) growth tunnel junction;
(6) growth GaInP solar cell;
(7) the GaAs contact layer of growing n-type high-dopant concentration is as ohmic contact;
(8) prepare each electrode layer, obtain required solar cell.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8502191B2 (en) * | 2009-05-12 | 2013-08-06 | University Of Tsukuba | Semiconductor device, manufacturing method therefor, and solar cell |
| US8119904B2 (en) * | 2009-07-31 | 2012-02-21 | International Business Machines Corporation | Silicon wafer based structure for heterostructure solar cells |
| KR20120119807A (en) * | 2011-04-22 | 2012-10-31 | 삼성전자주식회사 | Solar cell |
| CN102339890A (en) * | 2011-09-28 | 2012-02-01 | 天津蓝天太阳科技有限公司 | Novel three-junction gallium arsenide solar battery |
| CN102637775A (en) * | 2012-04-11 | 2012-08-15 | 天津三安光电有限公司 | Three-junction solar cell and preparation method thereof |
| CN102651418B (en) * | 2012-05-18 | 2015-08-05 | 中国科学院苏州纳米技术与纳米仿生研究所 | Three knot tandem solar cell and preparation method thereof |
| CN102651417B (en) * | 2012-05-18 | 2014-09-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | Three-knot cascading solar battery and preparation method thereof |
| CN106033785A (en) * | 2015-03-12 | 2016-10-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Preparation method for GaInP/GaAs dual-junction solar cell |
| CN105185860B (en) * | 2015-09-25 | 2017-04-12 | 郑州轻工业学院 | Bonding connected silicon substrate and gallium arsenide substrate solar cell |
| CN106601856B (en) * | 2015-10-13 | 2018-05-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Three-joint solar cell and preparation method thereof |
| CN107170848B (en) * | 2017-04-20 | 2019-07-12 | 广东爱康太阳能科技有限公司 | A kind of solar battery of generating electricity on two sides |
| CN109902316B (en) * | 2017-12-07 | 2023-06-02 | 上海垒芯半导体科技有限公司 | Sub-junction analysis method comprising complete multi-junction compound solar cell structure |
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Non-Patent Citations (2)
| Title |
|---|
| 两步生长和直接生长GaAs/Si单晶薄膜的比较. 刘翔等.半导体光电，第23卷第2期. 2002 |
| 两步生长和直接生长GaAs/Si单晶薄膜的比较. 刘翔等.半导体光电，第23卷第2期. 2002 * |
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