CN209045576U - A kind of novel dbr structure applied to lattice mismatch multijunction solar cell - Google Patents
A kind of novel dbr structure applied to lattice mismatch multijunction solar cell Download PDFInfo
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- CN209045576U CN209045576U CN201821861341.8U CN201821861341U CN209045576U CN 209045576 U CN209045576 U CN 209045576U CN 201821861341 U CN201821861341 U CN 201821861341U CN 209045576 U CN209045576 U CN 209045576U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
The utility model discloses a kind of novel dbr structures applied to lattice mismatch multijunction solar cell, to be stacked and placed on the GaInNAs/AlGaInAs periodic structure on lattice graded buffer layer, the sub- battery of GaInAs is stacked and placed on the GaInNAs/AlGaInAs periodic structure, the GaInNAs refractive index of GaInNAs/AlGaInAs periodic structure is high compared with AlGaInAs refractive index, and there are lattice mismatches between GaInNAs and AlGaInAs and between the base area material GaInAs of the sub- battery of GaInNAs and GaInAs, mismatch is no more than 3%, this strain compensating structure facilitates the release and dislocation movement by slip of stress.The utility model can reduce the defect density in the epitaxial layer of mismatch introducing, improve quality of materials, the sub- battery anti-radiation performance of GaInAs can be promoted, the technical indicators such as the whole short circuit current, open-circuit voltage, fill factor of battery are increased, improves battery entirety photoelectric conversion efficiency.
Description
Technical field
The utility model relates to the technical fields of solar energy power generating, refer in particular to a kind of applied to lattice mismatch mostly knot
The novel dbr structure of solar battery.
Background technique
With the development of modern industrial technology, worldwide energy crisis and problem of environmental pollution become increasingly conspicuous, too
Sun can be as cleaning and renewable energy gradually obtains various countries' attention.From the point of view of the development history of photovoltaic power generation technology, solar energy
Battery can be substantially divided into three categories: first generation crystal silicon solar batteries, second generation thin-film solar cells and third generation arsenic
Gallium multijunction solar cell.Currently, the transformation efficiency of commercial monocrystalline silicon battery is about 16%~20%, polycrystal silicon cell is about
14%~16%；GaInP, GaInAs and the GaInP/GaInAs/Ge three-joint solar cell of Ge battery composition are as tradition
The mainstream structure of GaAs multijunction cell, transformation efficiency is more than 41% under 500 times of optically focused, is much higher than crystal silicon battery, and have
The space further promoted.
Lattice Matching is integrally kept in traditional three junction battery structures, band gap group is combined into 1.85/1.40/0.67eV.However, right
In sunlight spectrum, the band gap of this battery is not optimal combination, due to larger between the sub- battery of GaInAs and Ge battery
Difference in band gap away from this structure bottom battery current is string due to pushing up three knot batteries in bottom much larger than middle battery and top battery
It is linked togather, according to the Current mechanism of cascaded structure, electric current determines that this structure is made by electric current is the smallest in three sub- batteries
It is lost at a big chunk solar energy, limits the raising of battery performance.
Theoretical analysis shows that needing battery and top battery in reduction to absorb to improve three junction battery photoelectric conversion efficiencies
The band gap in region allows middle battery and top battery to absorb more light, thus in improving, holder battery current reduce bottom battery electricity
Stream, may finally realize the three-joint solar cell of currents match.It analyzes accordingly, proposes the MM of lattice mismatched structures
(Metramorphic) structure solar battery, since mismatched material generates a large amount of threading dislocations, position in epitaxial process
Mistake is a kind of defect in itself, and defect composite guide causes battery performance seriously to reduce, it is therefore necessary to reduce the threading dislocation in epitaxial layer.
Common method is using gradual change buffering (the usually InGaAs GaInP material) connection that can discharge stress both at home and abroad at present
The Ge substrate and InGaAs material of lattice mismatch.
Three junction battery of MM structure is applied to the market CPV at first, and transfer efficiency is up to 42% or more；In recent years, MM is tied
In space cell, transfer efficiency decays up to 32% or more, and after its irradiation up to conventional 3 three junction battery products application of structure
The decaying of the level of junction battery, i.e. efficiency is lower than 18%, and advantage is much higher than other class photovoltaic cell products.But in middle holder battery still
There are very important penetration dislocation densities, develop the high request constantly proposed, crystalline quality of material to meet Space Science and Technology
And its anti-radiation performance needs to be further increased.
A large amount of irradiation experiments the result shows that, the anti-radiation performance of the sub- battery of GaInAs is far short of what is expected compared with the sub- battery of GaInP, has point
Analysis thinks that its reason is that As atomic radius is larger, its position is not easy to restore and cause after high energy particle irradiation.And Bragg reflection
Layer (DBR) has remarkable result for the promotion of anti-radiation performance.For example, in neutron battery following settings DBR, by adjusting DBR
Structure reflects the sunlight of corresponding wave band, makes not reflected back by the photon that GaInAs material is absorbed by secondary suction for the first time
It receives, is equivalent to the effective absorber thickness in a disguised form increasing GaInAs, the sub- battery design thickness of GaInAs can be effectively reduced, have
Conducive to raising anti-radiation performance.
In recent years, researcher has found in GaInNAs quaternary alloy material, due to having between displacement N atom compared with Gao Jian
There can be good plasticity and make film cures have fabulous work for filtering dislocation with lesser covalent radius
With.This material is applied in MM (Metamorphic) structure battery, plays the role of dislocation barrier layer, permits the pass through dislocation
The defects of changes longitudinal direction, and for laterally propagation, stress is released simultaneously.In in this way, the threading dislocation of holder battery be greatly decreased, outside
The crystal quality for prolonging layer gets a promotion.In addition, proving through theoretical research and experiment, a small amount of In is mixed simultaneously in GaAs material
Ga is formed with N1-xInxNyAs1-yQuaternary alloy material can obtain the GaInNAs material of different refractivity by adjusting x and y,
And with GaInAs Lattice Matching.Separately some researches show that there are 0.05% for the lattice constant between semiconductor material mutually adjoined
~5% difference, the tensile stress and compression that this difference generates are mutually compensated, without generating to extension layer crystal weight
It significantly affects, it is most important that the biography of threading dislocation can be made by the interface formed between tensile stress and the material of action of compressive stress
Direction is broadcast as the release of stress deflects to horizontal direction, therefore, DBR is designed as to the periodic structure of strain compensation, is mentioned
The collection of high minority carrier can also play the effect on dislocation barrier layer well simultaneously.
To sum up, the strain compensating structure DBR of this GaInNAs/AlGaInAs material composition is introduced into MM structure and ties too more
Positive energy battery not only can satisfy band gap optimization and require, but also can promote the anti-radiation performance of battery, can also improve threading dislocation and lead
The problem of epitaxial crystal quality of cause is deteriorated can farthest play the advantage of MM structure multijunction cell, improve battery efficiency.
Utility model content
The shortcomings that the purpose of the utility model is to overcome the prior arts and deficiency propose a kind of applied to lattice mismatch
The novel dbr structure of multijunction solar cell can reduce the defect density in the epitaxial layer of mismatch introducing, improve material matter
Amount, can promote the sub- battery anti-radiation performance of GaInAs, increase whole short circuit current, open-circuit voltage, fill factor of battery etc.
Technical indicator improves battery entirety photoelectric conversion efficiency.
To achieve the above object, technical solution provided by the utility model are as follows: one kind is applied to lattice mismatch and ties too more
The novel dbr structure of positive energy battery, the dbr structure are made of two kinds of alloy materials of GaInNAs, AlGaInAs
GaInNAs/AlGaInAs periodic structure is stacked and placed on the lattice graded buffer layer of lattice mismatch multijunction solar cell, brilliant
The sub- battery of GaInAs of lattice mismatch multijunction solar cell is stacked and placed on the GaInNAs/AlGaInAs periodic structure, wherein
The GaInNAs refractive index of the GaInNAs/AlGaInAs periodic structure is high compared with AlGaInAs refractive index, and GaInNAs with
There are lattice mismatches between AlGaInAs and between the base area material GaInAs of the sub- battery of GaInNAs and GaInAs, and mismatch is not
More than 3%, this strain compensating structure facilitates the release and dislocation movement by slip of stress.
Further, GaInNAs the and AlGaInAs thickness design of the GaInNAs/AlGaInAs periodic structure follows public affairs
Formula:In formula, d is thickness, and λ is the center reflection wavelength of estimated reflected waveband, and n is the refractive index of respective material.
Further, the reflected wavelength range of the GaInNAs/AlGaInAs periodic structure is λ~1200nm, and λ is by battery
It ties number and determines that the period is within the scope of 5~25 pairs.
Further, the lattice of two kinds of materials of GaInNAs and AlGaInAs of the GaInNAs/AlGaInAs periodic structure
Constant does not match strictly, and mismatch is in 0.01%~3% range.
Further, the X-ray diffraction rocking curve of the GaInNAs/AlGaInAs periodic structure should be with GaInAs electricity
The base area rocking curve in pond is overlapped.
The utility model compared with prior art, have the following advantages that with the utility model has the advantages that
1, GaInNAs material has rigid speciality, is combined into DBR with AlGaInAs and is applied to MM structure multi-junction solar electricity
Chi Zhong may filter that defect while improving photonic absorption, play dislocation barrier function.
2, the GaInNAs and AlGaInAs that form DBR are designed as strain compensating structure, what releasable lattice mismatch introduced
Stress is facilitated threading dislocation horizontal sliding by the interface that tensile strain and compressive strain act on, further decreases dislocation density.
3, dbr structure introduces multijunction solar cell, facilitates the anti-radiation performance for promoting battery.
4, GaInNAs material Background doping concentration is higher, up to 1 × 1017, the dbr structure doping being made of it is easy to be met
Battery design requirement.
Currents match can be kept in battery design using the three knot MM structure solar batteries that the utility model makes,
And by introducing there is the reflecting layer DBR of GaInNAs material to increase the sub- battery current of GaInAs, reduce its thickness and makes GaInAs
Sub- battery anti-radiation performance is substantially improved, and improves active area crystal quality, improves the photoelectric conversion performance of battery.According to analysis,
Under AM0 spatial spectral, compared to three knot MM structure batteries of no DBR reflection layer structure, tri- knot of MM of the utility model production
Battery short circuit electric current Jsc can achieve 19.2mA/cm2, transfer efficiency reaches 32.52%, and photoelectric properties are improved significantly (such as
Table 1).
Under the conditions of 1 AM0 of table, the no reflecting layer DBR and the three knot MM structure solar cell photoelectric performances for having the reflecting layer DBR
Analysis
| Battery types | Jsc(mA/cm2) | Voc(mV) | Fill factor FF | Efficiency |
| Traditional DBR | 18.5 | 2672 | 0.845 | 30.94% |
| Novel DBR | 19.2 | 2690 | 0.85 | 32.52% |
It compares by analysis, the three knot MM solar batteries made of the utility model, more traditional DBR, Flouride-resistani acid phesphatase
It can also have clear improvement, the transfer efficiency under AM0 spectrum, which promotes amplitude, can reach 5.13% (such as table 2), can greatly improve sky
Between power supply output power.
Table 2 uses anti-radiation performance analysis of three junction battery of MM structure of tradition DBR, novel DBR under AM0 spatial spectral
Detailed description of the invention
Fig. 1 is the structural schematic diagram using the lattice mismatch three-joint solar cell of novel dbr structure.
Specific embodiment
For the content for further illustrating the utility model, the utility model is carried out below in conjunction with specific embodiments and drawings
Detailed description.
As shown in Figure 1, lattice mismatch three-joint solar cell provided by the present embodiment, includes Ge substrate 1, the Ge
Substrate is p-type Ge single-chip；On the Ge substrate 1 according to stratiform overlaying structure be disposed with from the bottom to top GaInP at
Stratum nucleare 2, GaInAs buffer layer 3, the first tunnel junctions 4, lattice graded buffer layer 5, dbr structure 6, the sub- battery 7 of GaInAs, the second tunnel
Wear knot 8 and the sub- battery 9 of GaInP；Wherein, the dbr structure 6 be GaInNAs/AlGaInAs periodic structure, by GaInNAs,
Two kinds of alloy material compositions of AlGaInAs, the GaInNAs refractive index of GaInNAs/AlGaInAs periodic structure are rolled over compared with AlGaInAs
Rate height is penetrated, and is existed between GaInNAs and AlGaInAs and between the base area material GaInAs of the sub- battery of GaInNAs and GaInAs
Lattice mismatch, mismatch are no more than 3%, and this strain compensating structure facilitates the release and dislocation movement by slip of stress, and in this reality
Applying example design GaInNAs material and comparing base area material GaInAs is compression mismatch, and AlGaInAs material is compared with base area material
GaInAs is tensile stress mismatch, mismatch 0.5%；GaInNAs and AlGaInAs thickness design follows formula:Formula
In, d is thickness, and λ is the center reflection wavelength of estimated reflected waveband, and n is the refractive index of respective material；The GaInNAs/
The reflected wavelength range of AlGaInAs periodic structure is λ~1200nm, and λ is determined that the period is in 5~25 pairs of ranges by battery knot number
It is interior, and be 750~950nm, GaInNAs/ in the reflected wavelength range of the present embodiment GaInNAs/AlGaInAs periodic structure
The logarithm of AlGaInAs combination layer is 12 pairs；The GaInNAs and AlGaInAs two of the GaInNAs/AlGaInAs periodic structure
The lattice constant of kind material does not match strictly, and mismatch is in 0.01%~3% range；The GaInNAs/AlGaInAs period
The X-ray diffraction rocking curve of structure should be overlapped with the base area rocking curve of the sub- battery of GaInAs.
The GaInP nucleating layer 2, GaInAs buffer layer 3, the first tunnel junctions 4 keep Lattice Matching with Ge substrate 1.
The GaInP nucleating layer 2 is n-type doping layer, and electron concentration is 2 × 1018/cm3, with a thickness of 10nm.
The GaInAs buffer layer 3 is n-type doping layer, and electron concentration is 4 × 1018/cm3, with a thickness of 500nm.
The lattice graded buffer layer 5 is made of the GaInAs that In component gradually increases, and is n-type doping layer, electron concentration
It is 2 × 1018/cm3, with a thickness of 1000nm.
First tunnel junctions 4 are p-AlGaInAs/n-GaInP structure, wherein the thickness of p-AlGaInAs/n-GaInP
It is 10nm.
Battery overall thickness is 1800nm in the sub- battery 7 of GaInAs, and the optical band gap of GaInAs material is 1.25eV.
Second tunnel junctions 8 are p-AlGaInAs/n-GaInP structure, wherein the thickness of p-AlGaInAs/n-GaInP
It is 10nm.
Battery overall thickness is 800nm in the sub- battery 9 of GaInp, and the optical band gap of the sub- battery material of GaInP is
1.85eV。
In conclusion the utility model combination GaInNAs material own characteristic, GaInNAs/AlGaInAs material is formed
Strain compensating structure DBR be introduced into MM structure multijunction solar cell and not only can satisfy band gap optimization and require, but also electricity can be promoted
The anti-radiation performance in pond can also solve the problems, such as that epitaxial crystal quality caused by threading dislocation is deteriorated.In short, the utility model
Solar energy can be more fully utilized, the photoelectric conversion efficiency of lattice mismatched structures multijunction cell is improved, is had practical
Application value is worthy to be popularized.
Embodiment described above is only the preferred embodiment of the utility model, and the implementation of the utility model is not limited with this
Range, therefore all shapes according to the utility model, change made by principle, it should all cover within the protection scope of the present utility model.
Claims (5)
1. a kind of novel dbr structure applied to lattice mismatch multijunction solar cell, it is characterised in that: the dbr structure is
The GaInNAs/AlGaInAs periodic structure being made of two kinds of alloy materials of GaInNAs, AlGaInAs, it is more to be stacked and placed on lattice mismatch
On the lattice graded buffer layer of joint solar cell, the sub- battery of the GaInAs of lattice mismatch multijunction solar cell is stacked and placed on this
On GaInNAs/AlGaInAs periodic structure, wherein the GaInNAs refractive index of the GaInNAs/AlGaInAs periodic structure
It is high compared with AlGaInAs refractive index, and between GaInNAs and AlGaInAs and the base area material of GaInNAs and the sub- battery of GaInAs
There are lattice mismatch between GaInAs, mismatch is no more than 3%, and this strain compensating structure facilitates the release and dislocation of stress
Sliding.
2. a kind of novel dbr structure applied to lattice mismatch multijunction solar cell according to claim 1, feature
Be: GaInNAs the and AlGaInAs thickness design of the GaInNAs/AlGaInAs periodic structure follows formula:
In formula, d is thickness, and λ is the center reflection wavelength of estimated reflected waveband, and n is the refractive index of respective material.
3. a kind of novel dbr structure applied to lattice mismatch multijunction solar cell according to claim 1, feature
Be: the reflected wavelength range of the GaInNAs/AlGaInAs periodic structure is λ~1200nm, and λ is determined by battery knot number, week
Phase is within the scope of 5~25 pairs.
4. a kind of novel dbr structure applied to lattice mismatch multijunction solar cell according to claim 1, feature
Be: the lattice constant of two kinds of materials of GaInNAs and AlGaInAs of the GaInNAs/AlGaInAs periodic structure is not stringent
Matching, mismatch is in 0.01%~3% range.
5. a kind of novel dbr structure applied to lattice mismatch multijunction solar cell according to claim 1, feature
Be: the X-ray diffraction rocking curve of the GaInNAs/AlGaInAs periodic structure should shake with the base area of the sub- battery of GaInAs
Put curve co-insides.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109301006A (en) * | 2018-11-13 | 2019-02-01 | 中山德华芯片技术有限公司 | A kind of novel dbr structure applied to lattice mismatch multijunction solar cell |
| US11527668B2 (en) * | 2020-09-07 | 2022-12-13 | Azur Space Solar Power Gmbh | Stacked monolithic multi-junction solar cell |
-
2018
- 2018-11-13 CN CN201821861341.8U patent/CN209045576U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109301006A (en) * | 2018-11-13 | 2019-02-01 | 中山德华芯片技术有限公司 | A kind of novel dbr structure applied to lattice mismatch multijunction solar cell |
| US11527668B2 (en) * | 2020-09-07 | 2022-12-13 | Azur Space Solar Power Gmbh | Stacked monolithic multi-junction solar cell |
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