CN205752204U - A kind of two-sided growth four-junction solar cell with reflecting layer - Google Patents
A kind of two-sided growth four-junction solar cell with reflecting layer Download PDFInfo
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- CN205752204U CN205752204U CN201620437361.7U CN201620437361U CN205752204U CN 205752204 U CN205752204 U CN 205752204U CN 201620437361 U CN201620437361 U CN 201620437361U CN 205752204 U CN205752204 U CN 205752204U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/544—Solar cells from Group III-V materials
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Abstract
The utility model discloses a kind of two-sided growth four-junction solar cell with reflecting layer, including GaAs substrate, described GaAs substrate is the N-shaped GaAs single-chip of twin polishing, growing the most successively in described GaAs substrate top surface and have GaAs cushion, the first tunnel knot, AlGaAs/GaInAs DBR reflecting layer, the sub-battery of GaInNAs, the second tunnel knot, AlAs/AlGaAs DBR reflecting layer, the sub-battery of GaAs, the 3rd tunnel knot, the sub-battery of GaInP, ohmic contact layer, antireflective coating and front electrode, the lower surface at described GaAs substrate is disposed with Ga1‑zInzP strained buffer layer, Ga1‑ xInxAs battery and backplate.This utility model can improve photon absorption efficiency, plays the advantage of four junction batteries simultaneously, improves overall open-circuit voltage and the fill factor, curve factor of GaAs multijunction cell, and finally improves the photoelectric transformation efficiency of battery.
Description
Technical field
This utility model relates to the technical field of photovoltaic, refers in particular to a kind of two-sided growth four with reflecting layer
Joint solar cell.
Background technology
At present, traditional GaAs multijunction solar cell widely should apparently higher than crystal silicon battery because of its conversion efficiency
For concentrating photovoltaic power generation (CPV) system and spatial overlay.The main flow structure of GaAs multijunction cell be by GaInP,
The GaInP/GaInAs/Ge three-junction solar battery of GaInAs and Ge battery composition, overall holding Lattice Matching on battery structure,
Bandgap structure is 1.85/1.40/0.67eV.But, for sunlight spectrum, due between the sub-battery of GaInAs and Ge battery
The band gap combination away from, this three junction batteries of the bigger difference in band gap is not optimal, and under this structure, battery at the bottom of Ge absorbs too
Having more that in solar spectrum energy ratio, battery and top battery absorb is a lot, and therefore the short circuit current maximum of Ge battery can be close to middle battery
With the twice of top battery, due to the electric current limitation reason of cascaded structure, this structure causes a big chunk spectral energy not
The raising of battery performance can be limited by abundant conversion.
Theory analysis shows, inserts one layer of band between the sub-battery of GaInAs and the Ge battery of tradition three-junction solar battery
Gap, close to the sub-battery of 1.0eV, forms the four-junction solar battery that bandgap structure is 1.90/1.43/1.04/0.67eV, and it is theoretical
Efficiency can reach 58%, can reach 47% in conjunction with the Efficiency Limit after practical factor, is significantly larger than the limit of tradition three knot 42%
Efficiency, this is primarily due to compared to three junction batteries, and four junction batteries can improve open-circuit voltage and fill factor, curve factor.Through theoretical research
With it is demonstrated experimentally that mix a small amount of In and N in GaAs material to form Ga simultaneously1-xInxNyAs1-yQuaternary alloy material, works as x:y
=3,0 < y < when 0.06, Ga1-xInxNyAs1-yMaterial lattice constant mates substantially with GaAs (or Ge), and band gap is at 0.8eV extremely
Change between 1.4eV, and < when 0.03, its band gap is between 1.0eV to 1.1eV when 0.02 < y.Therefore, for the most traditional
GaInP/GaInAs/Ge tri-junction battery structure, inserts a joint band gap close to 1.0eV's between GaInAs and Ge battery
The sub-battery of GaInNAs forms four junction batteries and is then greatly improved battery conversion efficiency.
Owing to, in the preparation sub-cell process of GaInNAs, needing to combine high-temperature annealing process and could improve GaInNAs battery
Photoelectric properties, prepare if based on Ge substrate, then Ge battery structure can be impacted by high annealing simultaneously so that it is open circuit
Voltage reduces.Therefore, if use twin polishing GaAs substrate, the upper surface at GaAs substrate first prepare GaInP, GaAs and
The sub-battery of GaInNAs, after high annealing, then prepares the sub-battery of GaInAs of band gap about 0.7～0.8eV at its lower surface,
Ultimately form GaInP/GaAs/GaInNAs/GaInAs tetra-knot that bandgap structure is 1.9/1.42/1.0～1.1/0.7～0.8eV
Battery, then can farthest embody the advantage of four junction batteries, hence it is evident that improve GaAs multijunction solar cell open-circuit voltage and
Overall photoelectric transformation efficiency.
But, owing to the concentration of background carriers of GaInNAs material is the highest, this can make its minority diffusion length diminish.
In this case, if GaInNAs Material growth is the thickest, the effect of collection effective to photo-generated carrier can not be reached；On the contrary
Ground, the thinnest photon that can not fully absorb again corresponding wave band of GaInNAs Material growth, its consequence is the short circuit of GaInNAs battery
Electric current is low.But below GaInNAs battery, introduce Bragg reflecting layer (DBR) structure, then the problems referred to above can be made effectively to solve.?
In structure design, the sunlight of corresponding wave band can be reflected by regulation dbr structure, make the absorption not by GaInNAs material
Photon reflects back, and is greatly improved absorbed probability, is equivalent in a disguised form add " effective absorber thickness " of GaInNAs,
The design thickness of GaInNAs battery is able to thinning, can more effectively collect minority carrier, thus improve short circuit current.It addition,
Owing to source (usually dimethylhydrazine source) the organic source that price is more general providing atom N is much higher, reduce GaInNAs material layer
Thickness can save N source, thus reduces the production cost of battery.
Similarly, in the sub-battery structure of GaAs, by adding the dbr structure reacting corresponding wave band, reduce GaAs base thick
Degree, can be greatly reduced the free path of nonequilibrium carrier, improves photon absorption efficiency；Can be with the light of reflectance-transmittance GaAs base
Son so that it is again participate in opto-electronic conversion effect, thus improve battery efficiency.
To sum up, the GaInP/GaAs/Ga containing dbr structure1-3yIn3yNyAs1-y/GaxIn1-xAs four-junction solar cell both may be used
To meet the theoretical design requirements of four junction batteries, GaInNAs material minority diffusion length can be solved again in actual fabrication process relatively
The problem that little and GaAs battery base is blocked up, it is also possible to save the production cost of battery, can farthest play four junction batteries
Advantage, improve battery efficiency.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art and shortcoming, it is provided that a kind of have the two-sided of reflecting layer
Growth four-junction solar cell, can improve photon absorption efficiency, plays the advantage of four junction batteries simultaneously, improves GaAs many knots electricity
The overall open-circuit voltage in pond and fill factor, curve factor, and finally improve the photoelectric transformation efficiency of battery.
For achieving the above object, technical scheme provided by the utility model is: a kind of two-sided growth with reflecting layer
Four-junction solar cell, including GaAs substrate, described GaAs substrate is the N-shaped GaAs single-chip of twin polishing, at described GaAs
Substrate top surface grow the most successively have GaAs cushion, the first tunnel knot, AlGaAs/GaInAs DBR reflecting layer,
The sub-battery of GaInNAs, the second tunnel knot, AlAs/AlGaAs DBR reflecting layer, the sub-battery of GaAs, the 3rd tunnel knot, GaInP
Battery, ohmic contact layer, antireflective coating and front electrode, the lower surface at described GaAs substrate is disposed with Ga1-zInzP should
Become cushion, Ga1-xInxAs battery and backplate, wherein AlGaAs/GaInAs DBR reflecting layer is used for reflecting the long glistening light of waves
Son, AlAs/AlGaAs DBR reflecting layer is longer-wave photons in reflection.
Described Ohmic contact layer thickness is 100～1000nm, and this ohmic contact layer is that N-shaped height mixes Ga (In) As, adulterates dense
Degree is more than 2 × 18/cm3。
The gross thickness of the sub-battery of described GaInP is 500～1500nm, and GaInP material band gap is 1.85～1.9eV.
The gross thickness of the sub-battery of described GaAs is 1000～3000nm, and GaAs material band gap is 1.42eV.
Described Ga1-xInxThe gross thickness of As battery is 1500～5500nm, and its material band gap is 0.7～0.8eV；Described
The gross thickness of the sub-battery of GaInNAs is 1000～3000nm, its Ga1-3yIn3yNyAs1-yMaterial band gap is 1.0～1.1eV；Described
The thickness of GaAs cushion is 500～1500nm, and its N-shaped doping content is 1 × 18/cm3～1 × 19/cm3。
Described first tunnel knot is by p++-GaAs and n++-GaAs is constituted, and its thickness is 5～80nm；Described second tunnel
Knot is by p++-AlGaAs and n++-GaAs is constituted, and its thickness is 8～100nm；Described 3rd tunnel knot is by p++-GaInP and n++-
GaInP is constituted, and its thickness is 10～150nm.
The reflection wavelength in described AlAs/AlGaAs DBR reflecting layer is 780～880nm, and a combination thereof logarithm is 10～30 right；
The reflection wavelength in described AlGaAs/GaInAs DBR reflecting layer is 900～1200nm, and a combination thereof logarithm is 10～30 right；
Described Ga1-zInzThe mode of P strained buffer layer content gradually variational is continuous gradation or stepping gradual change, the lattice of end layer
Constant and Ga1-xInxAs battery is identical.
Described antireflective coating is oxide, nitride or fluoride film.
Described front electrode and backplate are metal alloy.
This utility model compared with prior art, has the advantage that and beneficial effect:
This programme utilizes the two-sided substrate of GaAs, and combines the own characteristic of GaInNAs material, at the upper surface of GaAs substrate
It is provided with the sub-battery of GaInP, GaAs and GaInNAs, the sub-battery of GaInAs of band gap about 0.7～0.8eV is set at its lower surface,
Finally give GaInP/GaAs/GaInNAs/GaInAs tetra-knot that bandgap structure is 1.9/1.42/1.1～1.0/0.7～0.8eV
Battery, meets four junction battery optimal band gap combinations under solar spectrum, and adds AlGaAs/GaInAs DBR and AlAs/
AlGaAs DBR reflecting layer can at utmost play the advantage of four junction batteries, significantly improves the opto-electronic conversion performance of battery, reduces
Cost.
Utilizing four-junction solar cell prepared by this programme, the band gap of each sub-battery is optimised, in combination with making apparatus
The DBR having excellent reflecting effect can make the sub-battery of GaInNAs and GaAs absorb solar photon more, is obviously reduced it to four knots
The degree of flow restriction of battery short circuit electric current, improves conversion efficiency.Understand through analyzing, under the conditions of AM0, two-sided without DBR reflecting layer
The short circuit current (Isc) growing four junction batteries is 13mA/cm2, the Isc of two-sided growth four junction battery with DBR reflecting layer can
Reach 17mA/cm2, and conversion efficiency also significantly improves to 33.7%.
Utilize four-junction solar cell prepared by this programme, due to the introducing in DBR reflecting layer so that GaInNAs and GaAs
Sub-cell thickness is thinning, i.e. need not grow and can fully absorb photon without thickness required during dbr structure, and this can be greatly saved
The consumption of expensive source material dimethyl trap, significantly reduces cost.
Accompanying drawing explanation
Fig. 1 is two-sided growth four-junction solar cell structural representation of the present utility model.
Fig. 2 is Ga of the present utility model1-zInzP strained buffer layer structural representation.
Detailed description of the invention
Below in conjunction with specific embodiment, the utility model is described in further detail.
As it is shown in figure 1, the two-sided growth four-junction solar cell described in the present embodiment, including GaAs substrate 1, described GaAs
Substrate 1 is the N-shaped GaAs single-chip of twin polishing, uses metal organic chemical vapor deposition technology (MOCVD), at 4 inches
The upper surface of GaAs substrate 1 grow the most successively according to layer by layer growth mode have GaAs cushion the 2, first tunnel knot 3,
AlGaAs/GaInAs DBR reflecting layer 4, the sub-battery of GaInNAs the 5, second tunnel knot 6, AlAs/AlGaAs DBR reflecting layer 7,
The sub-battery of GaAs the 8, the 3rd tunnel knot 9, the sub-battery of GaInP 10, ohmic contact layer 11, antireflective coating 12 and front electrode 13,
The lower surface of described GaAs substrate 1 is disposed with Ga1-zInzP strained buffer layer 14, Ga1-xInxAs battery 15 and back side electricity
Pole 16, wherein AlGaAs/GaInAs DBR reflecting layer 4 is used for reflecting longer-wave photons, and AlAs/AlGaAs DBR reflecting layer 7 is used for
Longer-wave photons in reflection.
Described ohmic contact layer 11 thickness is 100～1000nm, preferably 500nm, and this ohmic contact layer generally N-shaped height is mixed
Ga (In) As, doping content is more than 2 × 18/cm3。
The gross thickness of the sub-battery of described GaInP 10 is 500～1500nm, and preferably 800nm, GaInP material band gap is 1.85
～1.9eV, preferably 1.87eV.
The gross thickness of the sub-battery of described GaAs 8 is 1000～3000nm, and preferably 1400nm, GaAs material band gap is
1.42eV。
Described Ga1-xInxThe gross thickness of As battery 15 is 1500～5500nm, preferably 2200nm, and its material band gap is
0.7～0.8eV, preferably 0.75eV.
The gross thickness of the sub-battery of described GaInNAs 5 is 1000～3000nm, preferably 1000nm, its Ga1-3yIn3yNyAs1-y
Material band gap is 1.0～1.1eV, preferably 1.1eV.
The thickness of described GaAs cushion 2 is 500～1500nm, preferably 1000nm, and its N-shaped doping content is 1 × 18/
cm3～1 × 19/cm3, preferably 2 × 18/cm3～6 × 18/cm3。
Described first tunnel knot 3 is by p++-GaAs and n++-GaAs is constituted, and its thickness is 5～80nm, preferably 8nm；Described
Second tunnel knot 6 is by p++-AlGaAs and n++-GaAs is constituted, and its thickness is 8～100nm, preferably 10nm；Described 3rd tunnel
Knot 9 is by p++-GaInP and n++-GaInP is constituted, and its thickness is 10～150nm, preferably 14nm.
The reflection wavelength in described AlAs/AlGaAs DBR reflecting layer 7 is 780～880nm, and a combination thereof logarithm is 10～30
Right, preferably 16 is right；The reflection wavelength in described AlGaAs/GaInAs DBR reflecting layer is 900～1200nm, and a combination thereof logarithm is 10
～30 is right, preferably 16 is right.
Described Ga1-zInzThe mode of P strained buffer layer 14 content gradually variational is continuous gradation or stepping gradual change, the preferentially company of selection
Continuous gradual manner, component z is by 0.485 gradual change to 1, it may be assumed that keeping 0.485 component growth 200nm, then gradual change is to 1, progressive thickness
1000nm, keeps component 1 to grow 300nm, specifically refer to accompanying drawing 2.
Described antireflective coating 12 is oxide, nitride or fluoride film, is typically prepared by vacuum evaporation technology.
Described front electrode 13 and backplate 16 are metal alloy, are typically prepared by vacuum evaporation technology.
Being the concrete preparation process of the above-mentioned two-sided growth four-junction solar cell of the present embodiment below, its situation is as follows:
MOCVD is used to prepare epitaxial growth part and chip technology part, it may be assumed that outer layer growth part uses Vecco public
Department MOCVD, type K475, chip technology plated film part uses chemical vapor deposition machine (IAD) and metal evaporation machine (EB) to prepare, its work
Process flow comprises the following steps:
1) by selected GaAs substrate be loaded into MOCVD reative cell, chamber pressure be set as 30～50torr, preferably 35～
40torr；
2), in the range of growth temperature is set in 500～650 DEG C, preferably 580 DEG C, the upper surface at selected substrate deposits one layer
GaAs cushion, its growth rate is set toPreferablyThe effect of this layer is to reduce subsequent growth
Defects count in epitaxial layer；
3) growing the first tunnel knot on GaAs cushion in 450～650 DEG C of (preferably 550 DEG C) temperature ranges, it is raw
Long speed is set toPreferably
4) in 500～650 DEG C of (preferably 600 DEG C and keep stable) temperature ranges, continued growth AlGaAs/GaInAs
DBR reflecting layer, its growth rate is set toPreferably
5) AlGaAs/GaInAs DBR reflecting layer in 450～600 DEG C of (preferably 550 DEG C and keep stable) temperature ranges
The upper growth sub-battery of GaInNAs, growth rate is set toPreferably
6) in 500～650 DEG C of (preferable temperature 550 DEG C) temperature ranges, the sub-battery of GaInNAs grows the second tunnel
Knot, its growth rate is set toPreferably
7) in 500～650 DEG C of (preferably 620 DEG C and keep stable) temperature ranges, the second tunnel junctions growth AlAs/
AlGaAs DBR reflecting layer, its growth rate is set toPreferably
8) in 550～650 DEG C of (preferably 620 DEG C) temperature ranges, AlAs/AlGaAs DBR reflecting layer grows GaAs
Battery, its growth rate is set toPreferably
9) in 500～700 DEG C of (preferably 650 DEG C and keep stable) temperature ranges, growth regulation three tunnel on the sub-battery of GaAs
Road is tied, and its growth rate is set toPreferably
10) in 600～800 DEG C of (preferably 650 DEG C) temperature ranges, the 3rd tunnel junctions growth sub-battery of GaInP, growth
Speed is set toPreferably
11) in 450～650 DEG C of (preferably 550 DEG C and keep stable) temperature ranges, the sub-battery of GaInP grows ohm
Contact layer, growth rate is set toPreferably
12) substrate is turned over turnback, grow Ga at substrate lower surface1-zInzP strained buffer layer, its growth temperature is set to
600～800 DEG C, preferably 620 DEG C, growth rate isPreferablyThe effect of this layer is that reducing lattice fits
The defect concentrations such as the dislocation joining introducing；
13) at Ga1-zInzGa is grown on P component-gradient buffer layer1-xInxAs battery, its growth temperature is 550～650
DEG C, preferably 620 DEG C, its growth rate is set toPreferably
14) after epitaxial growth part terminates, chip technology complete the preparation of antireflective film, select chemical vapor deposition machine (IAD),
Vacuum is 1 × 10-5Torr～1 × 10-7Torr, preferably 4 × 10-6Torr～8 × 10-6Torr, temperature is set to 50～100 DEG C；
15) it is respectively completed the preparation of the alloy material constituting front electrode and backplate by chip technology, selects metal
Evaporator (EB), vacuum is 1 × 10-5Torr～1 × 10-7Torr, preferably 4 × 10-6Torr～8 × 10-6Torr, temperature is low
In 150 DEG C.So far, the preparation of required two-sided growth four-junction solar cell is just completed.
Remarks: outer layer growth part of the present utility model is not limited to MOCVD technology, it is possible to by vapour phase epitaxy, divide
Other epitaxy technology such as sub-beam epitaxy realizes；Similarly, chip technology part is also not limited to metal coating machine and chemical vapor deposition
Prepared by machine.
DBR reflection layer structure is incorporated in four-junction solar cell, at Ga by of the present utility model it is critical only that1- 3yIn3yNyAs1-yAlGaAs/GaInAs DBR and AlAs/AlGaAs DBR is inserted respectively below sub-battery and the sub-battery of GaAs, logical
Overregulate dbr structure parameter, make the photon not absorbed by the sub-battery of GaInNAs and GaAs reflect back by double absorption, phase
When in a disguised form adding " effective absorber thickness " of the sub-battery of GaInNAs and GaAs, the design thickness of two sub-batteries is able to
Thinning, can more effectively collect minority carrier, improve short circuit current.This battery structure had both met the four each sub-batteries of junction battery
Design requirement to thickness, can solve again the problem that in actual fabrication process, GaInNAs material minority diffusion length is less, also may be used
To save the production cost of battery, can farthest play the advantage of four junction batteries, improve battery efficiency.
Utilizing four-junction solar cell prepared by this programme, the band gap of each sub-battery is optimised, in combination with making apparatus
The DBR having excellent reflecting effect can make the sub-battery of GaInNAs and GaAs absorb solar photon more, is obviously reduced it to four knots
The degree of flow restriction of battery short circuit electric current, improves conversion efficiency.Understand through analyzing, under the conditions of AM0, two-sided without DBR reflecting layer
The short circuit current (Isc) growing four junction batteries is 13mA/cm2, the Isc of two-sided growth four junction battery with DBR reflecting layer can
Reach 17mA/cm2, and conversion efficiency also significantly improves to 33.7%, and as shown in table 1 below.
Under the conditions of table 1-AM0, have, without the four-junction solar cell Performance comparision in DBR reflecting layer
| Battery types | Isc(mA/cm2) | Voc(mV) | Pm(W/m2) | FF (%) | Eff (%) |
| Without DBR | 13.0 | 3310 | 369.83 | 86 | 27.3 |
| There is DBR | 17.0 | 3240 | 455.76 | 83 | 33.7 |
Utilize four-junction solar cell prepared by this programme, due to the introducing in DBR reflecting layer so that GaInNAs and GaAs
Sub-cell thickness is thinning, i.e. need not grow and can fully absorb photon without thickness required during dbr structure, and this can be greatly saved
The consumption of expensive source material dimethyl trap, significantly reduces cost, as shown in table 2 below.
Table 2-has, compare without four-junction solar cell every stove epitaxial wafer main source consumption and the expense in DBR reflecting layer
The examples of implementation of the above are only the preferred embodiment of this utility model, not limit of the present utility model with this
Practical range, therefore the change that all shapes according to this utility model, principle are made, all should contain at protection domain of the present utility model
In.
Claims (10)
1. there is the two-sided growth four-junction solar cell in reflecting layer, including GaAs substrate, it is characterised in that: described GaAs
Substrate is the N-shaped GaAs single-chip of twin polishing, and growing the most successively in described GaAs substrate top surface has GaAs to buffer
Layer, the first tunnel knot, AlGaAs/GaInAs DBR reflecting layer, the sub-battery of GaInNAs, the second tunnel knot, AlAs/AlGaAs
DBR reflecting layer, the sub-battery of GaAs, the 3rd tunnel knot, the sub-battery of GaInP, ohmic contact layer, antireflective coating and front electrode,
The lower surface of described GaAs substrate is disposed with Ga1-zInzP strained buffer layer, Ga1-xInxAs battery and backplate, its
Middle AlGaAs/GaInAs DBR reflecting layer is used for reflecting longer-wave photons, and AlAs/AlGaAs DBR reflecting layer is long wave in reflection
Photon.
A kind of two-sided growth four-junction solar cell with reflecting layer the most according to claim 1, it is characterised in that: institute
Stating Ohmic contact layer thickness is 100～1000nm, and this ohmic contact layer is that N-shaped height mixes Ga (In) As, doping content more than 2 ×
18/cm3。
A kind of two-sided growth four-junction solar cell with reflecting layer the most according to claim 1, it is characterised in that: institute
The gross thickness stating the sub-battery of GaInP is 500～1500nm, and GaInP material band gap is 1.85～1.9eV.
A kind of two-sided growth four-junction solar cell with reflecting layer the most according to claim 1, it is characterised in that: institute
The gross thickness stating the sub-battery of GaAs is 1000～3000nm, and GaAs material band gap is 1.42eV.
A kind of two-sided growth four-junction solar cell with reflecting layer the most according to claim 1, it is characterised in that: institute
State Ga1-xInxThe gross thickness of As battery is 1500～5500nm, and its material band gap is 0.7～0.8eV；Described GaInNAs
The gross thickness of battery is 1000～3000nm, its Ga1-3yIn3yNyAs1-yMaterial band gap is 1.0～1.1eV；Described GaAs buffers
The thickness of layer is 500～1500nm, and its N-shaped doping content is 1 × 18/cm3～1 × 19/cm3。
A kind of two-sided growth four-junction solar cell with reflecting layer the most according to claim 1, it is characterised in that: institute
State the first tunnel knot by p++-GaAs and n++-GaAs is constituted, and its thickness is 5～80nm；Described second tunnel knot is by p++-
AlGaAs and n++-GaAs is constituted, and its thickness is 8～100nm；Described 3rd tunnel knot is by p++-GaInP and n++-GaInP structure
Becoming, its thickness is 10～150nm.
A kind of two-sided growth four-junction solar cell with reflecting layer the most according to claim 1, it is characterised in that: institute
The reflection wavelength stating AlAs/AlGaAs DBR reflecting layer is 780～880nm, and a combination thereof logarithm is 10～30 right；Described
The reflection wavelength in AlGaAs/GaInAs DBR reflecting layer is 900～1200nm, and a combination thereof logarithm is 10～30 right.
A kind of two-sided growth four-junction solar cell with reflecting layer the most according to claim 1, it is characterised in that: institute
State Ga1-zInzThe mode of P strained buffer layer content gradually variational is continuous gradation or stepping gradual change, the lattice paprmeter of end layer and Ga1- xInxAs battery is identical.
A kind of two-sided growth four-junction solar cell with reflecting layer the most according to claim 1, it is characterised in that: institute
Stating antireflective coating is oxide, nitride or fluoride film.
A kind of two-sided growth four-junction solar cell with reflecting layer the most according to claim 1, it is characterised in that:
Described front electrode and backplate are metal alloy.
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| CN105826420A (en) * | 2016-05-12 | 2016-08-03 | 中山德华芯片技术有限公司 | Double-side growth four-junction solar cell with reflecting layer and preparation method thereof |
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| CN105826420A (en) * | 2016-05-12 | 2016-08-03 | 中山德华芯片技术有限公司 | Double-side growth four-junction solar cell with reflecting layer and preparation method thereof |
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