CN112234437A - Multi-component quantum well epitaxial structure for VCSEL and preparation process thereof - Google Patents
Multi-component quantum well epitaxial structure for VCSEL and preparation process thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
- H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
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Abstract
The invention relates to the field of multi-quantum well epitaxial structures, and discloses a multi-component quantum well epitaxial structure for a VCSEL (vertical cavity surface emitting laser) and a preparation process thereof. The main point is how to optimize and design GaAs/Al of an 850nm vertical cavity type surface emitting laser devicexGa1‑xThe parameters of As multiple quantum well epitaxial structure material further improve the modulation characteristic and output efficiency of VCSEL. The main scheme is that a low-pressure metal organic chemical vapor deposition (LP-MOCVD) growth process is utilized, a designed VCSEL structure model selects semi-insulating GaAs as a substrate for epitaxial material growth, growth experimental research is carried out on main process parameters such as growth temperature, reaction chamber pressure, total carrier gas flow, growth speed and the like, various parameters of the material are adjusted and optimized on the basis of control variables, the growth of a complete epitaxial structure is carried out, and the most optimal growth rate is determined at the same timeThe growth speed is good.
Description
Technical Field
The invention relates to GaAs/Al of VCSELxGa1-xAs multi-quantum well epitaxial structure, in particular to the design of parameters such As thickness, components, doping concentration and the like of a quantum well epitaxial material, the process of process preparation and the optimal growth rate.
Background
A vertical-cavity surface-emitting laser (VCSEL), which is a new semiconductor laser very popular in recent years, has an optical resonant cavity perpendicular to a substrate surface, a short active region cavity, a high relaxation oscillation frequency, and is easy to implement single longitudinal mode operation, and has a wide application in high-speed data transmission, optical storage, and optical communication. Since the first Room Temperature (RT) VCSEL (CW) VCSEL was developed on a GaAs substrate by professor ericsson et al in 1987, scholars at home and abroad have made many efforts to develop materials, structures and fabrication processes of vertical cavity surface emitting lasers.
Compared with a conventional emitting laser, the VCSEL has the following advantages:
(1) the emergent light beam is circular, has a small divergence angle and is easy to couple with an optical fiber and other optical elements;
(2) the active area has small volume, and the work of single longitudinal mode and low threshold value is easy to realize;
(3) the optical fiber modulation device can perform high-speed modulation, can be applied to a long-distance and high-speed optical fiber communication system, and has high photoelectric conversion efficiency;
(4) the large-scale array and photoelectric integration are easy to realize, the large-scale production can be realized, and the manufacturing cost is saved.
Under the subsequent efforts of domestic and foreign scholars, the modulation characteristics, output efficiency and reliability of the VCSEL are greatly improved, and in order to further reduce threshold current, improve slope efficiency and improve modulation bandwidth, the thickness, components and doping concentration of epitaxial materials must be optimally designed on a chip structure, so that the optical field and electric field distribution can be effectively overlapped, injected carriers are limited in a photo-gain region for radiation recombination, the quantum efficiency in the laser is improved, and the non-radiation recombination loss is reduced.
In the prior art, parameters of a multi-quantum well epitaxial structure material are set according to experience, no specific repeatable technical scheme is disclosed, and quantitative production cannot be achieved.
Disclosure of Invention
The invention aims to solve the problems that: how to optimize and design GaAs/Al of 850nm vertical cavity surface emitting laser devicexGa1-xThe parameters of As multiple quantum well epitaxial structure material further improve the modulation characteristic and output efficiency of VCSEL.
In order to solve the technical problems, the invention adopts the following technical scheme:
the invention provides a multi-quantum well epitaxial structure of a vertical cavity surface emitting laser device, which comprises a substrate layer, a contact layer and an epitaxial layer from bottom to top, wherein the epitaxial layer comprises a barrier layer, a well layer, an absorption layer and a top layer from bottom to top in sequence; wherein the top layer lattice constant is matched to the absorber layer.
The invention also provides a growth process of the multi-quantum well epitaxial structure of the vertical cavity surface emitting laser device, which is characterized by comprising the following steps of:
adopting Double Heterojunction (DH) to carry out Al pairing on the top layer and the barrier layerxGa1-xJudging the component x of As;
determining the growth rate of GaAs in the well layer by adopting a Single Quantum Well (SQW) growth layer;
and thirdly, optimally designing the thickness, the composition and the doping concentration of various materials of the epitaxial layer on the chip structure.
In the above technical solution, the thickness of the epitaxial layer material is designed:
top layer of Al0.2Ga0.8The As lattice constant is matched with the absorption layer, the light absorption cut-off wavelength is 710nm, a transparent window is formed for 850nm signal light, the PN junction is far away from the surface of the chip, the reliability of the device is improved, and the thickness of the top layer is 500-700 nm;
(II) absorption layer Al0.6Ga0.4As will absorb signal light and has small thicknessAt 100nm to reduce the influence on the responsivity of the device;
(iii) absorbing layer Al0.6Ga0.4As has an absorption coefficient alpha larger than Ge and much larger than Si at a wavelength of 850nm, and has a responsivity larger than 0.5A/W (lambda is 0.85 mu m) when the thickness W of the absorption layer is larger than 2.5 mu m.
In the above technical scheme, the epitaxial layer material is designed by the following components:
double Heterojunction (DH) is adopted to carry out the Al treatment on the top layerxGa1-xAnd (3) judging the composition of As, determining the Al composition of the AlxGa1-xAs of the narrow bandgap layer to be 0.24-0.28 according to the peak wavelength of As, and finding out that the Al composition is higher by considering that the flow of an Al-1 source is properly reduced, wherein the Al composition is 0.24.
In the above technical scheme, Al0.24Ga0.76Determination of As doping concentration and growth rate: testing well layer GaAs and contact layer Al by using Scanning Electron Microscope (SEM)xGa1-xAs junction surface, designing thickness of absorption layer and well layer to verify growth rate of GaAs of well layer, preliminarily measuring growth rate range of quantum well epitaxial material, determining doping concentration of epitaxial layer and contact layer by Hall test, and finally obtaining optimal growth rate range
Preferably, it is
Because the invention adopts the technical scheme, the invention has the following beneficial effects:
and (3) carrying out a growth experiment by using an LP-MOCVD technology, keeping the growth temperature constant, ensuring that no temperature change interruption exists in the whole process, and then sequentially determining the thickness of the multi-quantum well epitaxial structure, the optimal component of the material and the appropriate doping concentration by means of calculation, PL spectrum contrast test and the like to finally obtain the optimal growth speed.
According to the growth preparation process provided by the invention, the growth rate of the contact layer is improved, the growth time is shortened, and the thickness of the well layer can be accurately controlled at a slower growth rate.
GaAs/Al for VCSEL provided by the inventionxGa1-xThe prepared VCSEL laser has the characteristics of low cost, high efficiency and high integration level, and has a huge application market in short-distance and large-capacity parallel data links.
Description of the drawings:
FIG. 1 is a single quantum well SQW growth level;
FIG. 2 is the PL test results of the Al0.24Ga0.76As growth experiment;
FIG. 3 is a Double Heterojunction (DH) growth level;
FIG. 4 is the PL test results of a single quantum well growth experiment;
FIG. 5 is an experimental structure of GaAs/AlxGa1-x growth rate and well doping concentration;
FIG. 6 is an XRD test pattern of a QWIP epitaxial wafer;
FIG. 7 is an SEM image of an epitaxial wafer of GaAs/AlxGa1-xAs QWIP;
FIG. 8 is a schematic view of the structure of the present invention.
Description of the reference numerals
The light-emitting diode comprises a substrate layer 1, a contact layer 2, a 3-N type reflector, a 4-barrier layer, a 5-well layer, a 6-absorption layer, a 7-top layer, an 8-P type reflector, a 9-N type electrode, a 10-photoresist and an 11-electrode column.
The specific implementation mode is as follows:
firstly, GaAs/Al is selectedxGa1-xAs epitaxial material and growing by LP-MOCVD method. The structural model used 2 inches of semi-insulating GaAs as the substrate for epitaxial growth, trimethyl gallium (TMGa), trimethyl aluminum (TMAl) as the group III source, arsine (AsH3) as the group V source, and silane (SiH4) as the n-type dopant source.
Further, the thickness of each epitaxial layer is designed. Top layer Al0.2Ga0.8Lattice constant of As and absorption layer Al0.6Ga0.4The lattice constants of As are matched, the light absorption cut-off wavelength is 710nm, a transparent window is formed for 850nm signal light, and the thickness of the transparent window is 500-700 nm in order to enable a PN junction to be far away from the surface of a chip and increase the reliability of a device; the top layer material absorbs signal light, and the design thickness is less than 100nm so as to weaken the influence of the top layer material on the responsivity of the device; the absorption coefficient α of the absorption layer is larger than Ge at a wavelength of 850nm and much larger than Si, and it is calculated that the responsivity is larger than 0.5A/W (X-ray wavelength λ ═ 0.85 μm) when the thickness W of the absorption layer is larger than 2.5 μm.
Further, Double Heterojunction (DH) is adopted to carry out Al pairing on the top layer and the barrier layerxGa1-xAs component determination was made for the mixed crystal AXB1-xIn other words, the forbidden band width is directly related to the crystal composition, and the formula is as follows:
Eg(x)＝XEgA+(1-X)EgB-b X(1-X)
x is the content of A crystals, Eg(x)For the required forbidden band width, EgAAnd EgBThe forbidden band widths of the crystal A and the crystal B are respectively, and B is a matching coefficient.
According to a formula, the required forbidden bandwidth can be obtained by changing the components; instead, the appropriate composition may be determined according to a certain forbidden bandwidth.
As shown in FIG. 3, the GaAs substrate is used as the substrate, and the active layer is Alx2Ga1-x2Both sides of As are respectively connected with N type Alx1Ga1-x1As (hole blocking layer) and P-type Alx1Ga1-x1Two heterogeneous barriers are formed at the joint of two As (electron blocking layer) semiconductor materials, two groups of growth experiments are respectively carried out under the condition of controlling the growth temperature T to be 700 ℃, the peak wavelength of the first growth experiment is 714.5nm according to a PL test chart, and the formula lambda is shown in the specificationc＝hc/Eg，λcPeak wavelength, h is Planck constant, c is speed of light, EgFor the forbidden band width, the forbidden band width E can be obtainedgThereby defining a barrier layer AlxGa1-xAl component x of As is 0.26, AThe component l is higher, and the flow of the Al-1 source is properly reduced; in the second growth experiment, the flow of the Al-1 source is adjusted to 40ccm, the growth time of the barrier layer is increased at the same time, so as to avoid the influence of the quantum effect as much as possible, and the PL test result of the graph 2 shows that the barrier layer Al isxGa1-xAs has an Al component of 0.24.
The periodic thickness of the multiple quantum well is calculated according to the following formula:
Lp＝λ/{2(sinθn+1-sinθn)}
here, LpThe period thickness of the multiple quantum well is the sum of the well width and the potential barrier width; λ is the X-ray wavelength; theta is the diffraction angle of the satellite peak; n is the diffraction order of the satellite peak. The periodic thickness of the multiple quantum well calculated by a formula is about
Under the premise of accurate thickness control, the barrier layer (barrier layer for short) Al0.24Ga0.76The actual growth rate of As is approximately equal to (L)pOriginal substrate thickness)/growth time, i.e.
Slightly less than the growth rate measured by SEM
Further, the doping concentrations of the well layer and the contact layer were determined by Hall test. Well layer GaAs, contact layer AlxGa1-xThe growth rate and the doping concentration of As in the well layer were determined using the growth structure shown in FIG. 5, and p-Al was formed in the intermediate layer of the structure shown in FIG. 5xGa1-xAs is doped with certain p type to ensure that accurate Hall test can be carried out on the uppermost layer of n-GaAs. Test results show that under the doping condition, the n-type carrier of the n-GaAsThe concentration of the flow is 4.8e +17cm-3And expected 5e +17cm-3Slightly different, therefore, it is considered that in the subsequent epitaxial growth, the dopant amount of Si is appropriately increased, and the n-type doping concentration of the contact layer is 1e +18cm-3And the doping conditions are correspondingly adjusted according to the experimental result.
Further, the well layer GaAs/contact layer Al was determined in combination with PL and SEM test results0.98Ga0.02The growth rate of As. And determining the growth conditions of the formal epitaxial wafer according to the finally obtained average growth rate. It is worth noting that in the MOCVD growth process, in order to improve the quality of the heterogeneous interface of the multiple quantum wells, an overgrowth method is adopted, and the growth pause time of the heterogeneous interface is 1 second, so that the uniformity of the well width and the definition of the interface can be effectively improved. The experimental result shows that GaAs/Al0.24Ga0.76The optimal growth rate of As quantum well epitaxial material is
In addition, XRD test results of the QWIP epitaxial wafer are shown in fig. 6. It can be seen that the satellite peaks of the multiple quantum wells are weak in intensity, which is mainly due to the thicker capping layer (800nm upper contact layer) above the multiple quantum wells. Well layer/barrier layer (GaAs/Al)0.24Ga0.76As) in the QWIP epitaxial wafer SEM image shown in FIG. 7, in which GaAs/Al is present0.24Ga0.76The As quantum wells are clearly visible.
Claims (9)
1. A multi-quantum well epitaxial structure of a vertical cavity surface emitting laser device is characterized by comprising a substrate layer, a contact layer, an N-type reflector, an epitaxial layer and a P-type reflector from bottom to top, wherein the epitaxial layer comprises a barrier layer, a well layer, an absorption layer and a top layer from bottom to top in sequence; wherein the top layer lattice constant is matched to the absorber layer.
2. The MQW epitaxial structure of VCSEL device of claim 1, wherein barrier layer AlxGa1-xAl component of As0.24 to 0.28.
3. A multi-quantum well epitaxial structure of a vertical cavity surface emitting laser device according to claim 2, wherein the top layer has a thickness of 500-700 nm.
4. A multiple quantum well epitaxial structure of a vertical cavity surface emitting laser device according to claim 2,
5. a process of growing a multiple quantum well epitaxial structure of a vertical cavity surface emitting laser device according to claim 1, comprising the steps of:
adopting Double Heterojunction (DH) to carry out Al pairing on the top layer and the barrier layerxGa1-xJudging the component x of As;
determining the growth rate of GaAs in the well layer by adopting a Single Quantum Well (SQW) growth layer;
thirdly, judging the thickness, the composition and the doping concentration of various materials of the epitaxial layer on the chip structure.
6. The process of claim 2, wherein the growth process comprises: designing the thickness of the epitaxial layer material:
top layer of Al0.2Ga0.8As lattice constant and absorption layer Al0.6Ga0.4As matching, the light absorption cut-off wavelength is 710nm, a transparent window is formed for 850nm signal light, the PN junction is far away from the surface of the chip, the reliability of the device is improved, and the thickness of the top layer is 500-700 nm;
(II) absorption layer Al0.6Ga0.4As absorbs signal light, and the thickness of As is less than 100nm, so that the influence of As on the responsivity of the device is weakened;
and the absorption coefficient alpha of the absorption layer is larger than Ge and far larger than Si at the wavelength of 850nm, and when the thickness W of the absorption layer is larger than 2.5 mu m, the responsivity is larger than 0.5A/W, and lambda is 0.85 mu m.
7. The process of claim 2, wherein the growth process of the multiple quantum well epitaxial structure of the vertical cavity surface emitting laser device is as follows: the composition of the epitaxial layer material is determined:
double heterojunction for top layer AlxGa1-xThe component of As is judged, and barrier layer Al is determined according to the peak wavelength of AsxGa1-xThe Al component of As is 0.24-0.28.
8. The process of claim 2, wherein the growth process comprises: determining the doping concentration and the growth rate of the barrier layer: testing of Al by Scanning Electron Microscopy (SEM)xGa1-xAnd verifying the growth rate of GaAs of the well layer through the thicknesses of the absorption layer and the well layer on the As/GaAs junction surface, preliminarily measuring the growth rate range of the quantum well epitaxial material, and finally obtaining the optimal growth rate range of the well layer after determining the doping concentrations of the epitaxial layer and the contact layer through Hall test.
9. The process of claim 5, wherein the growth process comprises: the growth rate of the well layer is in the range of
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| CN114024210A (en) * | 2021-11-05 | 2022-02-08 | 电子科技大学中山学院 | Silicon-based vertical cavity surface emitting laser |
| CN115020268A (en) * | 2022-08-09 | 2022-09-06 | 华灿光电（浙江）有限公司 | InP growth rate measuring method and device |
| CN115173228A (en) * | 2022-07-19 | 2022-10-11 | 电子科技大学 | Vertical cavity surface emitting laser and preparation method thereof |
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| CN115020268A (en) * | 2022-08-09 | 2022-09-06 | 华灿光电（浙江）有限公司 | InP growth rate measuring method and device |
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