CN101145673A - A vertical outside cavity radiation semiconductor laser - Google Patents
A vertical outside cavity radiation semiconductor laser Download PDFInfo
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- CN101145673A CN101145673A CNA200710056216XA CN200710056216A CN101145673A CN 101145673 A CN101145673 A CN 101145673A CN A200710056216X A CNA200710056216X A CN A200710056216XA CN 200710056216 A CN200710056216 A CN 200710056216A CN 101145673 A CN101145673 A CN 101145673A
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Abstract
The invention relates to a vertical outer cavity surface emitting semiconductor laser. The laser comprises a pumping light source, a heat radiator, a Bragg reflector, working material, an outer cavity mirror, and an output coupling mirror, wherein the outer cavity mirror is a Porro prism, the bottom surface of the Porro prism is oppositely parallel to the surface of the working material and the output coupling mirror. The bottom surface of the Porro prism, the working material and the Bragg reflector form a resonant cavity, and the output coupling mirror, the Porro prism, the working material and the Bragg reflector also form a resonant cavity. The Porro prism has simple position adjustment. The inventive laser has excellent mechanical and thermal stability, and can still stably operate in the fieldwork environment with shock wave, vibration and large temperature variation.
Description
Technical field
The present invention relates to a kind of semiconductor laser, particularly a kind of emission semiconductor laser of vertical external chamber surface.
Background technology
Vertical cavity surface emitting laser is one of most active research topic of current optoelectronic areas, compare with edge-emission semiconductor laser, vertical cavity surface emitting laser has less far-field divergence angle, circular light spot and is easy to advantages such as two-dimensional array, is with a wide range of applications.Optical pumping vertical external cavity emitting laser (OPS-VECSEL) is with a wide range of applications in fields such as laser display, laser communication, materials processing, medical treatment and defence engineerings with its high power, quality light beam quality and the characteristics that are easy to two-dimensional array as the emerging device in the surface-emitting laser semiconductor laser technique.Particularly its characteristics that are easy to intracavity frequency doubling and two dimensional surface array can realize the surface-emission laser output of high light beam quality, and this has very large research and development prospect in fields such as laser industrial processes, Solid State Laser pumping, crystal double frequencies.Existing vertical external cavity emitting laser comprises pump light source, heat abstractor, Bragg mirror, operation material, external cavity mirror, output coupling mirror; Described external cavity mirror adopts spherical reflector.This vertical external cavity emitting laser in use, require the summit of spherical reflector just in time to be on the light path at photon place, thereby the parts of a plurality of adjusting spherical reflectors position to be arranged fixedly on the microscope base of spherical reflector, regulating need be very accurate, debug time is long, and laser do not have the stability of machinery and heat, is difficult under shock wave, vibration and the big field work environment such as variations in temperature.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of emission semiconductor laser of vertical external chamber surface of debugging easy, machinery and Heat stability is good.
In order to solve the problems of the technologies described above, emission semiconductor laser of vertical external chamber surface of the present invention comprises pump light source, heat abstractor, Bragg mirror, operation material, external cavity mirror, output coupling mirror; Described external cavity mirror adopts Borrow's prism (porro prism); The bottom surface of Borrow's prism is also parallel in opposite directions with the surface of operation material, output coupling mirror.Constitute a resonant cavity between the bottom surface of Borrow's prism, operation material and the Bragg mirror, also constitute a resonant cavity between output coupling mirror, Borrow's prism, operation material and the Bragg mirror.
The present invention adopts Borrow's prism as external cavity mirror, make the surperficial parallel of its bottom surface and operation material as long as regulate the fixing microscope base of Borrow's prism, be fixed again and get final product, thereby do not need the complicated adjusting device on the microscope base, simple in structure, position adjustments is simple, and laser has the stability of fabulous machinery and heat, in that have still can steady operation under shock wave, vibration and the big field work environment such as variations in temperature.
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Description of drawings
Fig. 1 is a structural representation of the present invention.1 is pump light source among the figure, 2 external cavity mirror, 3 anti-reflection films, 4 Window layer, 5 light absorbing zones, 6 periodicity Multiple Quantum Well active gain districts, 7 Bragg mirrors, 8 fin, 9 heat sink, 10 microchannel fin, 11 bottom surfaces, 12 output coupling mirrors, 13,14 inclined-planes.
Embodiment
As shown in Figure 1, emission semiconductor laser of vertical external chamber surface of the present invention comprises: pump light source 1, heat abstractor, Bragg mirror 7, operation material, external cavity mirror 2, output coupling mirror 12; Described heat abstractor comprises fin 8, heat sink 9, microchannel fin 10; Described operation material comprises anti-reflection film 3, Window layer 4, light absorbing zone 5, periodicity Multiple Quantum Well active gain district 6; Described external cavity mirror 2 adopts Borrow's prisms (porro prism), the bottom surface 11 of Borrow's prism and anti-reflection film 3, output coupling mirror 12 in opposite directions, and the bottom surface 11 of Borrow's prism and anti-reflection film 3, output coupling mirror 12 are parallel.Constitute a resonant cavity between the bottom surface 11 of Borrow's prism, operation material and the Bragg mirror 7, also constitute a resonant cavity between output coupling mirror 12, Borrow's prism, operation material and the Bragg mirror 7.
The pump light that pump light source 1 is sent incides operation material, absorbed by operation material and produce photo-generated carrier, photo-generated carrier is through luminous after the radiation recombination, produce photon, these photons return after Bragg mirror 7 reflections, arrive the bottom surface 11 of Borrow's prism again through operation material, part photon produces resonance between the bottom surface 11 of Borrow's prism and Bragg mirror 7, another part is from bottom surface 11 incidents of Borrow's prism, through the 14 liang of secondary reflections in inclined-plane 13 and inclined-plane, arrive output coupling mirror 12 from bottom surface 11 outgoing of Borrow's prism, between Bragg mirror 7 and output coupling mirror 12, produce resonance.After the intensity of photon surpasses threshold value, by output coupling mirror 12 output laser.
Borrow's prism adopts BAK4 or BAK7 material; Pump light source 1 adopts semiconductor laser or the solid state laser of emission wavelength at 630-1250nm; Adopt growth technologies to comprise MOCVD or MBE technology grown successively periodically Multiple Quantum Well active gain district 6, light absorbing zone 5 and Window layer 4 above the semiconductor distributed bragg reflector mirror 7; Anti-reflection film 3 is grown on the Window layer 4 by magnetron sputtering or electron beam evaporation or chemical vapour deposition technique; Fixedly connected with the upper surface of fin 8 by scolder in semiconductor distributed bragg reflector mirror 7 lower surfaces; Fixedly connected by capillary bonding mode with heat sink 9 upper surface in the lower surface of fin 8; Fixedly connected with the upper surface of microchannel fin 10 by heat-conducting glue in heat sink 9 lower surface; The transmitance of 12 pairs of excitation wavelengths of output coupling mirror is 50%, and output coupling mirror is fixed on the optical adjusting frame at two ends about in the of 12.The bottom surface 11 of Borrow's prism (porro prism) and semiconductor distributed bragg reflector mirror 7 30-100mm of being separated by, with output coupling mirror 12 0-50mm of being separated by, they constitute the resonant cavity of laser with output coupling mirror 12.
Embodiment 1:
Output light for excitation wavelength 980nm, pump light source 1 is high-power 800-810nm wavelength semiconductor laser array, Borrow's prism adopts BAK4 or BAK7 material, anti-reflection film 3 is Ta205, Window layer 4 is InGaP or AlGaAs, light absorbing zone 5 is AlGaAs, periodically Multiple Quantum Well active gain district 6 is In0.16Ga0.84As quantum well and Ga0.06As0.94P potential barrier, semiconductor-distribution Bragg reflector 7 is that 25-30 is to AlGaAs/GaAs, scolder is an indium, fin 8 is diamond or Si, heat sink 9 is red copper or oxygen-free copper or fine copper, heat-conducting glue is that heat conduction is siliceous, and microchannel fin 10 is red copper or oxygen-free copper or Si material, and output coupling mirror 12 is an optical glass.So just can obtain to constitute the 980nm optical pumping vertical external cavity face emitting semiconductor laser of coupling cavity by Borrow's prism.
Embodiment 2:
Change the pump light source among the embodiment 11 into high power 630-670nm semiconductor laser array, periodically Multiple Quantum Well active gain district 6 changes GaAs quantum well and A10.2Ga0.8As potential barrier into, so just can obtain to be made of Borrow's prism the 850nm optical pumping vertical external cavity face emitting semiconductor laser of coupling cavity.
Embodiment 3:
Change the pump light source among the embodiment 11 into 975-1250nm high-power semiconductor laser array, Window layer 4 changes InP into, periodically Multiple Quantum Well active gain district 6 changes InGaAsP/InP into, semiconductor-distribution Bragg reflector 7 changes 25-30 into to InP/InGaAsP, so just can obtain to be made of Borrow's prism the 1150nm optical pumping vertical external cavity face emitting semiconductor laser of coupling cavity.
Claims (3)
1. an emission semiconductor laser of vertical external chamber surface comprises pump light source (1), heat abstractor, Bragg mirror (7), operation material, external cavity mirror (2), output coupling mirror (12); It is characterized in that described external cavity mirror (2) adopts Borrow's prism; The bottom surface of Borrow's prism (11) is also parallel in opposite directions with surface, the output coupling mirror (12) of operation material.
2. emission semiconductor laser of vertical external chamber surface according to claim 1 is characterized in that Borrow's prism adopts BAK4 or BAK7.
3. emission semiconductor laser of vertical external chamber surface according to claim 2 is characterized in that pump light source (1) adopts semiconductor laser or the solid state laser of emission wavelength at 630-1250nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200710056216XA CN101145673A (en) | 2007-10-25 | 2007-10-25 | A vertical outside cavity radiation semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200710056216XA CN101145673A (en) | 2007-10-25 | 2007-10-25 | A vertical outside cavity radiation semiconductor laser |
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| Publication Number | Publication Date |
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| CN101145673A true CN101145673A (en) | 2008-03-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA200710056216XA Pending CN101145673A (en) | 2007-10-25 | 2007-10-25 | A vertical outside cavity radiation semiconductor laser |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544988A (en) * | 2011-02-25 | 2012-07-04 | 北京国科世纪激光技术有限公司 | Laser cavity mirror clamping mechanism, laser resonant cavity and laser |
| CN112234437A (en) * | 2020-10-30 | 2021-01-15 | 电子科技大学 | Multi-component quantum well epitaxial structure for VCSEL and preparation process thereof |
| CN113169509A (en) * | 2018-07-23 | 2021-07-23 | 马里兰大学帕克分校 | Laser cavity repetition rate tuning and high bandwidth stabilization |
-
2007
- 2007-10-25 CN CNA200710056216XA patent/CN101145673A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544988A (en) * | 2011-02-25 | 2012-07-04 | 北京国科世纪激光技术有限公司 | Laser cavity mirror clamping mechanism, laser resonant cavity and laser |
| CN113169509A (en) * | 2018-07-23 | 2021-07-23 | 马里兰大学帕克分校 | Laser cavity repetition rate tuning and high bandwidth stabilization |
| CN112234437A (en) * | 2020-10-30 | 2021-01-15 | 电子科技大学 | Multi-component quantum well epitaxial structure for VCSEL and preparation process thereof |
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