CN101388522A - Electric pump top - Google Patents
Electric pump top Download PDFInfo
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- CN101388522A CN101388522A CNA2008100513079A CN200810051307A CN101388522A CN 101388522 A CN101388522 A CN 101388522A CN A2008100513079 A CNA2008100513079 A CN A2008100513079A CN 200810051307 A CN200810051307 A CN 200810051307A CN 101388522 A CN101388522 A CN 101388522A
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- bragg reflector
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- distribution bragg
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Abstract
The invention discloses a laser whose electrical pump top emitting is vertical to the outer cavity surface emitting, which comprises a heat dissipating device, a semi-conductor distributing Bragg reflector, a double-faced electrode, a multiple quantum well gain region and an external cavity mirror. An optical anti-reflective film is plated on the light extraction window of the laser, an external cavity reflector adopts a plane-concave reflector which is coated with multi layers of dielectric membranes, a main resonant chamber is formed between an N-type semi-conductor distributing Bragg reflector and a P-type semi-conductor distributing Bragg reflector, and an auxiliary resonant chamber is formed between the external cavity reflector and the P-type semi-conductor distributing Bragg reflector. The position of the plane-concave external cavity reflector of the laser can be flexibly changed, and the plane-concave external cavity reflector can be aslant arranged. The laser has excellent mechanical stability and heat stability, which is not sensitive to external environment.
Description
Technical field
The present invention relates to a kind of semiconductor laser, particularly a kind of electric pump top.
Background technology
Vertical cavity surface emitting laser has received increasing concern as a kind of novel semi-conductor laser.For common edge-emission semiconductor laser, it is less that vertical cavity surface emitting laser has far-field divergence angle, circular light spot, and light injury threshold is higher, is convenient to carry out advantage such as two dimension is integrated, has very big application potential.But wherein a subject matter of Cun Zaiing is, in order to satisfy application demands such as pump erbium-doped optical fiber laser and fiber amplifier, need to improve the power output of vertical cavity surface emitting laser, and because the resonant cavity of vertical cavity surface emitting laser is long shorter, mostly be wavelength magnitude, therefore the main path that improves power output is exactly to adopt the bigger light-emitting window of area to increase the active area volume, improves power output.But the increase of light-emitting window area will cause the high-order transverse mode to increase, the laser beam quality variation; The less device beam quality of light-emitting window area is better, but power output is very low, can't satisfy the demand of high power applications.Therefore, just proposed this solution of vertical external cavity emitting laser, used this device, can improve power output, used outer-cavity structure to control laser beam quality simultaneously by improving the light-emitting window area.Vertical external cavity emitting laser has two kinds of pump modes of optical pumping and electric pump Pu, and pump laser need add pump light source, and structure is complicated, and mechanical stability is relatively poor and efficient is lower; The electric pump Pu device of having developed mostly is end emitting structural, the light-emitting window of laser is on substrate surface, include the substrate part in the resonant cavity of laser, when device is worked under higher drive current, because the rising of underlayer temperature, the thermal lensing effect that the temperature gradient that forms causes will exert an influence to beam quality, and end emitting structural need carry out the double-sided alignment photoetching, increased the complexity and the manufacturing cost of technology, and end emitting structural is not suitable for the bigger wave band of substrate absorption.
Summary of the invention
The technical problem to be solved in the present invention provides top, a kind of employing electric pump Pu emission outer-cavity structure, and device architecture and heat abstractor are comparatively simple, and are the electric pump tops that need not double-sided alignment technology.
For solving the problems of the technologies described above, electric pump top of the present invention comprises heat abstractor, N face electrode, the N type semiconductor distribution Bragg reflector, Multiple Quantum Well gain region, P type semiconductor distribution Bragg reflector, p side electrode, external cavity mirror; Described external cavity mirror is the plano-concave mirror, constitutes a main resonance cavity between N type semiconductor distribution Bragg reflector and the P type semiconductor distribution Bragg reflector, also constitutes a secondary resonant cavity between external cavity mirror and the P type semiconductor distribution Bragg reflector.
Use the MOCVD N type semiconductor distribution Bragg reflector of growing successively, Multiple Quantum Well gain region and P type semiconductor distribution Bragg reflector structure, N face electrode is on the lower surface of N type semiconductor distribution Bragg reflector, and be connected with heat abstractor by the In scolder, p side electrode is on P type semiconductor distribution Bragg reflector upper surface, simultaneously produce light window thereon, external cavity mirror is fixed on the optical adjusting frame, and aims at light-emitting window.
Advantage of the present invention: adopt electric pump Pu structure, therefore need not to add the pumping laser light source and for the additional heat abstractor of pump light source, need not to use baroque adjusting device, structure is comparatively compact, have fabulous machinery and thermal stability, environmental change is insensitive to external world; When introducing outer-cavity structure and improve beam quality, adopted top transmitting chip structure, avoided light beam in the end emitting structural to be subjected to the influence of thermal lensing effect, further improved beam quality by substrate; Owing to adopted emission structure at top, avoided light beam to be absorbed by substrate, so this structure be applicable to visible emitting and near infrared band laser simultaneously by substrate; Device technology flow process and existing vertical cavity surface emitting laser preparation technology compatibility, owing to adopt emission structure at top, thereby need not double-sided alignment technology, simplify the technological process of device preparation, and reduced manufacturing cost.
Description of drawings
Fig. 1 is a structural representation of the present invention.Heat abstractor 1, N face electrode 2, N type semiconductor distribution Bragg reflector 3, Multiple Quantum Well gain region 4, P type semiconductor distribution Bragg reflector 5, p side electrode 6, external cavity mirror 7.
Embodiment
As shown in the figure, electric pump top of the present invention comprises: heat abstractor 1, N face electrode 2, N type semiconductor distribution Bragg reflector 3, Multiple Quantum Well gain region 4, P type semiconductor distribution Bragg reflector 5, p side electrode 6, external cavity mirror 7, the light-emitting window place is coated with anti-reflection blooming, be used for eliminating surface reflection, add the feedback intensity of high light, form outer-cavity structure.Described heat abstractor 1 is the microchannel hot and cold water sink, Multiple Quantum Well gain region 4 is a periodicity InGaAs/GaAsP Multiple Quantum Well gain region, N type semiconductor distribution Bragg reflector 3, P type semiconductor distribution Bragg reflector 5 and external cavity mirror 7 common formation laserresonators.This resonant cavity is a kind of three minute surface resonant cavitys, is divided into main chamber and secondary chamber, and the resonant cavity that N type semiconductor distribution Bragg reflector 3 and P type semiconductor distribution Bragg reflector 5 constitute is main chamber, is active cavity; The resonant cavity that constitutes between P type semiconductor distribution Bragg reflector 5 and the external cavity mirror 7 is secondary chamber, is passive cavity, is used for the control beam quality.
Use continuous laser power supply that laser is carried out the electric pump Pu, because charge carrier injects, InGaAs/GaAsP between N type semiconductor distribution Bragg reflector 3 and P type semiconductor distribution Bragg reflector 5 periodically Multiple Quantum Well gain region provides internal gain, three minute surface resonant cavitys provide and produce the required feedback of laser generation, come stimulated emission is amplified.When internal gain reached threshold value, the laser that laser sends was via light-emitting window on the p side electrode 6 and external cavity mirror coupling output.The resonant cavity that is made of N type semiconductor distribution Bragg reflector 3 and P type semiconductor distribution Bragg reflector 5 is an active cavity, provides to take place to swash to penetrate required gain; The resonant cavity that external cavity mirror 7 and P type semiconductor distribution Bragg reflector 5 constitute is a passive cavity, and effect is to improve the quantity that the loss of laser high-order transverse mode suppresses the high-order transverse mode, improves the beam quality of laser.
External cavity mirror adopts BAK4 or BK7 material; Laser power supply is a continuous laser power supply; N type semiconductor distribution Bragg reflector 3 and p N-type semiconductor N distribution Bragg reflector 5 are the GaAs/AlAs structure, and the Multiple Quantum Well gain region is a periodically multi-quantum pit structure of InGaAs/GaAsP; N type semiconductor distribution Bragg reflector 3, P type semiconductor distribution Bragg reflector 5 and Multiple Quantum Well gain region use the MOCVD growth technology to grow; Anti-reflection blooming is grown in light-emitting window place on the p side electrode 6 by magnetron sputtering or electron beam evaporation technique; P side electrode is Ti/Pt/Au or Ti/Au or Au/Cr or Au/In, by electron beam or thermal evaporation or magnetron sputtering growth; N face electrode is Au/Ge/Ni or Au/Pd/Ge or Pt/Au/Ge, by electron beam or thermal evaporation or magnetron sputtering technique growth; N face electrode is fixed on the hot and cold water sink of microchannel by the In scolder, and the material of microchannel hot and cold water sink is oxygen-free copper or red copper or fine copper.The transmitance of exocoel speculum at the excitation wavelength place is 50%～90%, and exocoel speculum 7 is fixed on the optical adjusting frame.External cavity mirror 7 is 10-40mm with the distance of P type semiconductor distribution Bragg reflector 5, N type semiconductor distribution Bragg reflector 3 is 1-3 μ m with the cavity length that P type semiconductor distribution Bragg reflector 5 constitutes, and N type semiconductor distribution Bragg reflector 3, P type semiconductor distribution Bragg reflector 5 and external cavity mirror constitute the resonant cavity of laser jointly.
Embodiment 1:
For excitation wavelength is the output light of 980nm, and pumping source is a continuous laser power supply, and external cavity mirror adopts BAK4 or BK7 material, and anti-reflection film system is Ta
2O
5Or MgF
2Or HfO
2The P type semiconductor distribution Bragg reflector is 10 couples of AlGaAs/GaAs, the N type semiconductor distribution Bragg reflector is 30 layers of AlGaAs/GaAs, periodically the Multiple Quantum Well gain region is the InGaAs/GaAsp structure, comprising InGaAs quantum well and GaAsP potential barrier, scolder is In, and the material of microchannel hot and cold water sink is red copper or oxygen-free copper or fine copper.So just can obtain the 980nm electric pump top.
Embodiment 2:
Periodicity quantum well gain region among the embodiment 1 is changed to the GaAs/AlGaAs structure,, just can obtains the 850nm electric pump top comprising GaAs quantum well and AlGaAs potential barrier.
Embodiment 3:
The material of the p N-type semiconductor N distributed bragg reflector mirror among the embodiment 1 is changed to InP/InGaAsP, logarithm is changed to 10-15 pairs, the material of n N-type semiconductor N distributed bragg reflector mirror is changed to InP/InGaAsP, logarithm is changed to 25-30 pairs, periodically quantum well active gain district changes the InGaAsP/InP quantum well structure into, so just can obtain the 1550nm electric pump top.
By adjusting the logarithm and the material of semiconductor-distribution Bragg reflector, and the material structure of Multiple Quantum Well gain region and component, can obtain to launch the electric pump Pu top emitting laser of 850nm-1550nm wavelength.
Claims (2)
1, a kind of electric pump top, it is characterized in that this laser comprises heat abstractor (1), N face electrode (2), N type semiconductor distribution Bragg reflector (3), Multiple Quantum Well gain region (4), P type semiconductor distribution Bragg reflector (5), p side electrode (6), external cavity mirror (7), this laser pumping mode is the electric pump Pu, and adopt emission structure at top and outer-cavity structure simultaneously, this structure is applicable to visible emitting and near infrared band laser simultaneously;
The annexation of each several part: N face electrode (2) is on the lower surface of N type semiconductor distribution Bragg reflector (3), and be connected with heat abstractor by the In scolder, p side electrode (6) is on P type semiconductor distribution Bragg reflector (5) upper surface, install thereon simultaneously and produce light window, external cavity mirror (7) is fixed on the optical adjusting frame, and aims at light-emitting window.
2, a kind of electric pump top according to claim 1, it is characterized in that N type semiconductor distribution Bragg reflector (3), P type semiconductor distribution Bragg reflector (5) and external cavity mirror (7) constitute three specular laser light resonant cavitys jointly, be divided into main chamber and secondary chamber: the resonant cavity that N type semiconductor distribution Bragg reflector (3) and P type semiconductor distribution Bragg reflector (5) constitute is main chamber, be active cavity, provide to take place to swash and penetrate required gain; The resonant cavity that constitutes between P type semiconductor distribution Bragg reflector (5) and the external cavity mirror (7) is secondary chamber, is passive cavity, is used for the control beam quality.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100513079A CN101388522A (en) | 2008-10-22 | 2008-10-22 | Electric pump top |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100513079A CN101388522A (en) | 2008-10-22 | 2008-10-22 | Electric pump top |
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| Publication Number | Publication Date |
|---|---|
| CN101388522A true CN101388522A (en) | 2009-03-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008100513079A Pending CN101388522A (en) | 2008-10-22 | 2008-10-22 | Electric pump top |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104300364A (en) * | 2014-10-10 | 2015-01-21 | 中国科学院长春光学精密机械与物理研究所 | Vertical-cavity surface-emitting semiconductor laser |
| CN108333856A (en) * | 2017-01-19 | 2018-07-27 | 深圳奥比中光科技有限公司 | Optical projection apparatus and apply its depth camera |
| CN110112654A (en) * | 2019-06-26 | 2019-08-09 | 长春中科长光时空光电技术有限公司 | A kind of vertical cavity semiconductor optical amplifier and optical amplification system |
| CN110112653A (en) * | 2019-06-20 | 2019-08-09 | 海南师范大学 | A kind of emission semiconductor laser of vertical external chamber surface |
| CN111313231A (en) * | 2020-02-28 | 2020-06-19 | 长春中科长光时空光电技术有限公司 | Vertical cavity surface emitting laser and control method and control device thereof |
| CN112688163A (en) * | 2020-12-10 | 2021-04-20 | 华慧科锐(天津)科技有限公司 | Irregular reflector structure of distributed feedback laser |
-
2008
- 2008-10-22 CN CNA2008100513079A patent/CN101388522A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104300364A (en) * | 2014-10-10 | 2015-01-21 | 中国科学院长春光学精密机械与物理研究所 | Vertical-cavity surface-emitting semiconductor laser |
| CN104300364B (en) * | 2014-10-10 | 2017-07-25 | 中国科学院长春光学精密机械与物理研究所 | Vertical-cavity-face emitting semiconductor laser |
| CN108333856A (en) * | 2017-01-19 | 2018-07-27 | 深圳奥比中光科技有限公司 | Optical projection apparatus and apply its depth camera |
| CN108333856B (en) * | 2017-01-19 | 2023-07-07 | 奥比中光科技集团股份有限公司 | Optical projection device and depth camera using same |
| CN110112653A (en) * | 2019-06-20 | 2019-08-09 | 海南师范大学 | A kind of emission semiconductor laser of vertical external chamber surface |
| CN110112653B (en) * | 2019-06-20 | 2023-11-14 | 海南师范大学 | Vertical external cavity surface emitting semiconductor laser |
| CN110112654A (en) * | 2019-06-26 | 2019-08-09 | 长春中科长光时空光电技术有限公司 | A kind of vertical cavity semiconductor optical amplifier and optical amplification system |
| CN111313231A (en) * | 2020-02-28 | 2020-06-19 | 长春中科长光时空光电技术有限公司 | Vertical cavity surface emitting laser and control method and control device thereof |
| CN111313231B (en) * | 2020-02-28 | 2021-07-02 | 长春中科长光时空光电技术有限公司 | Vertical cavity surface emitting laser and control method and control device thereof |
| CN112688163A (en) * | 2020-12-10 | 2021-04-20 | 华慧科锐(天津)科技有限公司 | Irregular reflector structure of distributed feedback laser |
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Open date: 20090318 |