CN102868088A - Device and method for enhancing feedback of external cavity feedback spectrum beam combination semiconductor laser - Google Patents
Device and method for enhancing feedback of external cavity feedback spectrum beam combination semiconductor laser Download PDFInfo
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- CN102868088A CN102868088A CN2012103619781A CN201210361978A CN102868088A CN 102868088 A CN102868088 A CN 102868088A CN 2012103619781 A CN2012103619781 A CN 2012103619781A CN 201210361978 A CN201210361978 A CN 201210361978A CN 102868088 A CN102868088 A CN 102868088A
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Abstract
The invention relates to a device and a method for enhancing feedback of an external cavity feedback spectrum beam combination semiconductor laser and belongs to the technical field of semiconductor lasers. A collimating lens, an imaging mirror, the semiconductor and an external cavity feedback mirror form a 4f system in the non-spectrum beam combination direction of the external cavity feedback spectrum beam combination semiconductor laser, and luminous points on the semiconductor laser are directly imaged and perpendicularly emitted onto the external cavity feedback mirror to form effective feedback. The method lowers the requirements on position precision of the external cavity feedback spectrum beam combination semiconductor laser on the semiconductor laser, the preparation process and the mounting and adjusting process are simplified, and output power and reliability of the external cavity feedback spectrum beam combination semiconductor laser are improved.
Description
Technical field
The present invention relates to a kind of exocoel feedback spectrum that strengthens and close method and the device of bundle semiconductor laser feedback, belong to the semiconductor laser technique field, particularly a kind of enhancing exocoel feedback spectrum that improves beam quality closes method and the device of bundle semiconductor laser feedback.
Background technology
Semiconductor laser has that conversion efficiency is high, long service life, be easy to modulation, volume is little and the advantage such as lightweight, low-power device is widely used in the message areas such as optical communication and optical storage already.High power device is limited by beam quality, uses mainly as pumping source in fields such as industry and national defence, as direct light source, only can be applied in the less demanding occasion of power density.The beam quality that improves high power semiconductor lasers is one of direction of in recent years laser technology research.
The beam quality of high power semiconductor lasers mainly is subject to slow-axis direction and (is parallel to the epitaxial loayer direction and is called slow axis, be called fast axle perpendicular to the epitaxial loayer direction), beam quality for single this direction of luminous point is the decades of times of quick shaft direction, be thousands of times of quick shaft direction for the beam quality of centimetre this direction of bar of standard, cause it to be restricted in all many-sided application.Simultaneously the power output of single semiconductor laser light emitting unit is low, is generally several watts to tens watts, in order to realize Shang kilowatt power stage, needs a plurality of semiconductor laser units of employing close bundle.For the sharp combiner mode of routine, mainly close bundle, polarization coupling and wavelength by the space and close Shu Shixian.Polarization coupling and wavelength close bundle can be when improving power output, do not reduce the beam quality of laser, it is the effective means that realizes the output of high light beam quality semiconductor laser, but because this closes the restriction that the bundle mode is subject to the performance of laser own and coating technique, cause that to carry high-power multiple limited, generally be no more than 10 times, its power output can not meet the demands.Therefore the major way that bundle just becomes present realization high-power semiconductor laser output is closed in the space, the method realizes that principle is simple, it adopts a plurality of semiconductor laser unit one dimensions or two-dimensional space stack, a plurality of laser cells are exported in the same direction, and required the unit light beam to draw close in the space as much as possible.The method that bundle is closed in the space can realize several kilowatts even power stage up to ten thousand, can realize that such as the two-dimensional space array that 2200 laser strip of German Dilas company's employing form pulse power is up to the laser pulse output of 264KW, but the method is when increasing power, spot size is also in continuous increase, cause laser beam quality to reduce, can not realize the laser beam output of high-power and high-lighting beam quality.
It is to realize the effective ways of high-power and high-lighting beam quality semiconductor laser output that spectrum closes the bundle technology.It utilizes the roomy characteristics of gain spectral of semiconductor laser material, control by grating and exocoel feedback, make semiconductor laser unit on the same chip can export the laser of different wave length, then the dispersion interaction by grating, the laser beam space of these wavelength can be overlapped into light beam output, the beam quality of output beam equates with the beam quality of single laser beam, so realize the high light beam quality Laser output under the condition that realizes high-power output.Adopt the method, U.S. Teradiode company has realized power output up to 450W, and beam quality only is the semiconductor laser product of 6mm.mrad, the output of core diameter 100um/NA0.12 optical fiber.
Close intrafascicular at spectrum, in order to realize effective Feedback, the status requirement of semiconductor laser unit is very strict, should be lower than 1/2 of quick shaft direction luminous zone width such as " smile " for laser array, otherwise can not form effective Feedback, laser cell can not form to swash and penetrate, and this encapsulation with regard to noise spectra of semiconductor lasers has proposed Secretary.The encapsulation of present commercial semiconductor laser element generally adopt slicken solder such as In with laser chip directly be welded in the oxygen-free copper of high heat conductance heat sink on, perhaps adopt to adopt hard solder such as AuSn first with chip soldering on the thermal coefficient of expansion submodule suitable with chip, and then with submodule be welded in oxygen-free copper heat sink on, any mode no matter, all there is stress in laser chip after the encapsulation, cause chip crooked, form so-called smile effect.The smile effect of commercial semiconductor laser generally is not less than 1um, therefore causes the semiconductor laser of present commercialization can not be applicable to spectrum and closes intrafascicular.
Summary of the invention
The impact of exocoel feedback light spectrum being closed the bundle semiconductor laser in order to reduce the laser cell dislocation the present invention proposes a kind of method of closing Shu Fangxiang increase imaging lens at non-spectrum, reduces the status requirement of semiconductor laser unit, the feedback in the Effective Raise laser cavity.
A kind ofly strengthen the method that exocoel feedback spectrum closes bundle semiconductor laser feedback, it realizes that principle is, closes Shu Fangxiang at the non-spectrum of exocoel feedback semiconductor laser, and the laser beam of semiconductor laser output is f through focal length
1Collimating mirror one collimation after, be f by focal length again
2The imaging lens effect, directly the luminous point on the semiconductor laser is imaged onto on the exocoel feedback mirrors, its incident direction is just in time vertical with the exocoel feedback mirrors, after process exocoel feedback mirrors partly reflects, reverberation can turn back to former luminous point along light path, form effective resonance, part transmission output forms Laser output.
Close Shu Fangxiang at non-spectrum, described semiconductor laser is positioned at collimating mirror one left side f
1The place, imaging lens is positioned at collimating mirror right side f
1+ f
2The place, feedback mirrors is positioned at imaging lens right side f
2The place.
The spectrum of exocoel feedback semiconductor laser closes Shu Fangxiang, after the multi-beam of a plurality of luminescence unit outputs on the semiconductor laser, process focal length are collimating mirror two collimations of f3, in focal distance f
4Under the effect of field lens, incide on the grating with different angles, and at grating place generation space overlap, then by the feedback effect of exocoel feedback mirrors and the dispersion interaction of grating, so that laser beam closes Shu Fangxiang wavelength monotone variation at spectrum, and by the exocoel feedback mirrors output angle of divergence laser identical with single luminescence unit on the semiconductor laser with spot size; Described semiconductor laser is positioned at collimating mirror two left side f
3The place, field lens is positioned at collimating mirror two right side f
3+ f
4The place, grating is positioned at field lens right side f
4The place, the exocoel feedback mirrors is positioned at the Littrow angle direction of grating, and vertical in the diffraction light of this aspect.
A kind of exocoel feedback spectrum that strengthens closes the device of bundle semiconductor laser feedback, include semiconductor laser, collimating mirror one, imaging lens, exocoel feedback mirrors, collimating mirror two, field lens, grating, the rear facet of its semiconductor laser and exocoel feedback mirrors form resonant cavity; Described semiconductor laser is positioned at collimating mirror one left side f
1The place, imaging lens is positioned at collimating mirror one right side f
1+ f
2The place, the exocoel feedback mirrors is positioned at imaging lens right side f
2The place; This semiconductor laser is comprised of a plurality of luminous points, the anti-reflection film of its front facet plating reflectivity＜0.5%, its anti-reflection film transmitance〉99%; Semiconductor laser is the same material preparation, also can be the different materials preparation;
This semiconductor laser is a plurality of luminescence units (emitter) space arrangements, or is laser array (bar), or the linear array that forms for a plurality of laser array space arrangements or the battle array that changes;
The reflectivity of its exocoel feedback mirrors is 5%-15%;
Grating only exists 1 grade or-1 order diffraction for reflection or transmission grating, and its diffraction efficiency is greater than 90%, and has high damage threshold ~ 10KW/cm
2Magnitude.
The present invention has following advantage: introduce imaging lens by close Shu Fangxiang at non-spectrum, effectively reduce the position accuracy demand of exocoel feedback semiconductor laser noise spectra of semiconductor lasers unit, can directly introduce existing ripe packaged type encapsulates laser, thereby simplify the preparation technology of exocoel feedback semiconductor laser and debug technique, improve reliability and power output that exocoel feedback spectrum closes the bundle semiconductor laser.
Description of drawings
Fig. 1 is that the spectrum of exocoel feedback semiconductor laser of the present invention closes bundle direction structure schematic diagram.
Fig. 2 is that the non-spectrum of the conventional exocoel feedback semiconductor laser of the present invention closes bundle direction structure schematic diagram.
Fig. 3 is the structural representation that the non-spectrum of exocoel feedback semiconductor laser that the present invention produces dislocation closes Shu Fangxiang.
Fig. 4 is that the non-spectrum of the present invention closes the light path sketch that the laser cell formation vibration of dislocation occurs Shu Fangxiang.
Fig. 5 is that the non-spectrum of exocoel feedback semiconductor laser of the present invention closes the effective Feedback schematic diagram that forms when Shu Fangxiang produces dislocation.
Figure number implication explanation: the 1. lower limb light, 121 ' of the axle glazed thread of the top edge light of light beam, 12. dislocation light beams, 121. dislocation light beams, 122. dislocation light beams, 123. dislocation light beams on semiconductor laser, 11. axles. the reflection ray of dislocation light beam top edge light, 122 '. the reflection ray, 123 ' of dislocation beam axis glazed thread. the reflection ray of dislocation light beam lower limb light, 2. collimating mirror one, 3. imaging lens, 4. exocoel feedback mirrors, 5. collimating mirror two, 6. field lens, 7. grating; Wherein single arrow represents the Spectral beam combining direction.
Embodiment
The spectrum of exocoel feedback semiconductor laser closes the bundle process as shown in Figure 1, the rear facet of semiconductor laser 1 and exocoel feedback mirrors 4 form resonant cavity, semiconductor laser 1 is comprised of a plurality of luminous points, its front facet plating anti-reflection film, transmitance〉99%, after a plurality of unit light beam of output collimates through collimating mirror 25, under field lens 6 effects, incide on the grating 7 with different angles, and at grating place generation space overlap, then by the feedback effect of dispersion interaction and the exocoel feedback mirrors 4 of grating 7, so that luminescence unit closes the Shu Fangxiang wavelength at spectrum and is monotone variation (λ on the semiconductor laser 1
1, λ
2λ
N), and at the equal laser identical with single luminous point of exocoel feedback mirrors 4 output facula sizes and the angle of divergence, wherein the reflectivity of exocoel feedback mirrors 4 is 5%-15%.
As shown in Figure 2, non-spectrum for conventional exocoel feedback semiconductor laser closes Shu Fangxiang, and semiconductor laser 1 output beam impinges perpendicularly on the exocoel feedback mirrors 4 after collimating through collimating mirror 1, reflect to form feedback light through part, the part transmission forms Laser output.But when closing Shu Fangxiang at non-spectrum, during semiconductor laser 1 unit generation dislocation, this laser cell 12 just can not form effective Feedback.As shown in Figure 3, wherein unit light beam 11 is dislocation-free, can form effective vibration; Dislocation occurs in unit light beam 12, behind collimating mirror 25 collimations, departs from the optical axis transmission, oblique being mapped on the exocoel feedback mirrors 4, and its reverberation can not turn back in the laser cell, can not form vibration, causes the laser power loss.Accompanying drawing 4 closes the light path sketch that the laser cell formation vibration of dislocation occurs Shu Fangxiang for the non-spectrum of the present invention, as shown in the figure, the laser cell 12 of dislocation occurs through behind the collimating mirror 1, depart from the optical axis transmission, then under imaging lens 3 effects, impinge perpendicularly on the exocoel feedback mirrors 4, the top edge light of laser cell 12 reflects formation light 121 ' along lower limb after reflecting through exocoel feedback mirrors 4, reflect vertically after the axle glazed thread of laser cell 12 reflects through exocoel feedback mirrors 4 and form light 122 ', the lower limb light of laser cell 12 reflects formation light 123 ' along top edge after reflecting through exocoel feedback mirrors 4, because folded light beam such as incident beam overlap fully, therefore can turn back to former lasing fluorescence puts 12 places, forms effective Feedback.So the present invention can all can realize effective Feedback to laser cell axial or that occur to misplace, as shown in Figure 5.
Claims (5)
1. one kind strengthens the method that exocoel feedback spectrum closes bundle semiconductor laser feedback, it is characterized in that:
A, close Shu Fangxiang at the non-spectrum of exocoel feedback semiconductor laser, the laser beam of semiconductor laser (1) output is f through focal length
1Collimating mirror one (2) collimation after, be f by focal length again
2Imaging lens (3) effect, directly the luminous point on the semiconductor laser is imaged onto on the exocoel feedback mirrors (4), its incident direction is just in time vertical with exocoel feedback mirrors (4), after the reflection of exocoel feedback mirrors (4) part, reverberation turns back to former luminous point along light path, form effective resonance, the part transmission forms Laser output;
Close Shu Fangxiang at non-spectrum, described semiconductor laser (1) is positioned at collimating mirror one (2) left side f
1The place, imaging lens (3) is positioned at collimating mirror (2) right side f
1+ f
2The place, feedback mirrors (4) is positioned at imaging lens (3) right side f
2The place;
The spectrum of b, exocoel feedback semiconductor laser closes Shu Fangxiang, after the multi-beam of a plurality of luminescence unit outputs on the semiconductor laser (1), process focal length are collimating mirror two (5) collimations of f3, in focal distance f
4Under the effect of field lens (6), incide on the grating (7) with different angles, and locate to occur space overlap at grating (7), then by the feedback effect of dispersion interaction and the exocoel feedback mirrors (4) of grating, so that laser beam closes Shu Fangxiang wavelength monotone variation at spectrum, and by exocoel feedback mirrors (4) the output angle of divergence and the identical laser of the upper single luminescence unit of spot size and semiconductor laser (1), the wavelength of semiconductor laser unit output beam is closed Shu Fangxiang along spectrum be the monotone variation relation, and at the equal laser identical with the unit light beam of exocoel feedback mirrors (4) output facula and the angle of divergence; Described semiconductor laser (1) is positioned at collimating mirror two (5) left side f
3The place, field lens (6) is positioned at collimating mirror two (5) right side f
3+ f
4The place, grating (7) is positioned at field lens (6) right side f
4The place, exocoel feedback mirrors (4) is positioned at the Littrow angle direction of grating (7), and vertical in the diffraction light of this aspect.
2. one kind strengthens the device that exocoel feedback spectrum closes bundle semiconductor laser feedback, it is characterized in that comprising: semiconductor laser (1), collimating mirror one (2), imaging lens (3), exocoel feedback mirrors (4), collimating mirror two (5), field lens (6), grating (7), the rear facet of its semiconductor laser (1) and exocoel feedback mirrors (4) form resonant cavity; Described semiconductor laser (1) is positioned at collimating mirror one (2) left side f
1The place, imaging lens (3) is positioned at collimating mirror one (2) right side f
1+ f
2The place, feedback mirrors (4) is positioned at imaging lens (3) right side f
2The place; This semiconductor laser (1) is comprised of a plurality of luminous points, the anti-reflection film of its front facet plating reflectivity＜0.5%, its anti-reflection film transmitance〉99%; Semiconductor laser (1) is the same material preparation, also can be the different materials preparation.
3. close the device of bundle semiconductor laser feedback according to enhancing exocoel feedback spectrum claimed in claim 2, it is characterized in that: this semiconductor laser (1) is a plurality of luminescence unit space arrangements, or be laser array, or the linear array that forms for a plurality of laser array space arrangements or the battle array that changes.
4. close the device of bundle semiconductor laser feedback according to enhancing exocoel feedback spectrum claimed in claim 2, it is characterized in that: the reflectivity of its exocoel feedback mirrors (4) is 5%-15%.
5. close the device of bundle semiconductor laser feedback according to enhancing exocoel feedback spectrum claimed in claim 2, it is characterized in that: grating (7) is reflection or transmission grating, only have 1 grade or-1 order diffraction, its diffraction efficiency is greater than 90%, and has high damage threshold ~ 10KW/cm
2Magnitude.
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| CN2012103619781A CN102868088A (en) | 2012-09-26 | 2012-09-26 | Device and method for enhancing feedback of external cavity feedback spectrum beam combination semiconductor laser |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020052515A1 (en) * | 2018-09-13 | 2020-03-19 | Ii-Vi Suwtech Inc. | Laser beam combining device with an unstable resonator cavity |
| CN114994934A (en) * | 2022-07-19 | 2022-09-02 | 中国科学院长春光学精密机械与物理研究所 | Spectrum beam combining device and method |
| CN115079426A (en) * | 2022-07-19 | 2022-09-20 | 中国科学院长春光学精密机械与物理研究所 | Spectrum beam combining device and method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6208679B1 (en) * | 1998-09-08 | 2001-03-27 | Massachusetts Institute Of Technology | High-power multi-wavelength external cavity laser |
| CN102273030A (en) * | 2008-11-04 | 2011-12-07 | 麻省理工学院 | External-cavity one-dimensional multi-wavelength beam combining of two-dimensional laser elements |
-
2012
- 2012-09-26 CN CN2012103619781A patent/CN102868088A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6208679B1 (en) * | 1998-09-08 | 2001-03-27 | Massachusetts Institute Of Technology | High-power multi-wavelength external cavity laser |
| CN102273030A (en) * | 2008-11-04 | 2011-12-07 | 麻省理工学院 | External-cavity one-dimensional multi-wavelength beam combining of two-dimensional laser elements |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020052515A1 (en) * | 2018-09-13 | 2020-03-19 | Ii-Vi Suwtech Inc. | Laser beam combining device with an unstable resonator cavity |
| US20210296858A1 (en) * | 2018-09-13 | 2021-09-23 | Ii-Vi Suwtech, Inc. | Laser beam combining device with an unstable resonator cavity |
| CN114994934A (en) * | 2022-07-19 | 2022-09-02 | 中国科学院长春光学精密机械与物理研究所 | Spectrum beam combining device and method |
| CN115079426A (en) * | 2022-07-19 | 2022-09-20 | 中国科学院长春光学精密机械与物理研究所 | Spectrum beam combining device and method |
| CN115079426B (en) * | 2022-07-19 | 2023-08-22 | 中国科学院长春光学精密机械与物理研究所 | Spectrum beam combining device and method |
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Application publication date: 20130109 |