CN203631978U - Multi-wavelength high-power semiconductor laser device light source system used for laser processing - Google Patents
Multi-wavelength high-power semiconductor laser device light source system used for laser processing Download PDFInfo
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- CN203631978U CN203631978U CN201320677666.1U CN201320677666U CN203631978U CN 203631978 U CN203631978 U CN 203631978U CN 201320677666 U CN201320677666 U CN 201320677666U CN 203631978 U CN203631978 U CN 203631978U
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Abstract
The utility model provides a multi-wavelength high-power semiconductor laser device light source system used for laser processing. Each semiconductor laser device unit of a semiconductor laser device stack array is provided with two sets of laser chips which are different in wavelength. A shaping module comprises a reflecting mirror and a light filter. The light filter is coated with a film with high reflection of laser with wavelength of lambda 1 and a film with high transmission of laser with wavelength of lambda 2. The reflecting mirror is arranged on a light emergent path of a first laser chip set, and the light filer is arranged on the light emergent path of a second laser chip set. The mirror surface of the reflecting mirror and the light filter are arranged in parallel so that beams of laser of the second laser chip set and the beams of laser of the first laser chip set are combined via the light filter and then emergent. The system is high in output energy so that multi-wavelength broad spectrum and high-power output can be realized and various different metal materials can be processed in laser processing application. Compared with single wavelength, metal surface absorption efficiency is higher in processing of metal with different wavelengths.
Description
Technical field
The utility model belongs to technical field of laser processing, relates to a kind of multi-wavelength high-power semiconductor laser light resource system.
Background technology
High-power semiconductor laser has the advantages such as volume is little, lightweight, efficiency is high, the life-span is long, be widely used in laser processing, laser medicine, laser display and field of scientific study, become the comprehensive core devices that new century development is fast, achievement is many, subject infiltration is wide, range of application is large.
Semiconductor laser is just towards high-power future development, and especially in fields such as laser processings, the multikilowatt continuous wave output of semiconductor laser has become inevitable demand.And along with the working depth to workpiece increases, more high-output power, more the semiconductor laser of small light spot is badly in need of development.But compared with other lasers, the beam quality of semiconductor laser is poor, the beam quality of fast and slow axis is inhomogeneous, and far field light intensity is oval Gaussian Profile, focuses on difficulty larger, realizes compared with the Laser output of small light spot and being difficult for.Be single wavelength for the folded battle array of laser machine semiconductor laser at present, because of the laser absorption efficiency difference of different metal to different wave length, the metal species that single wavelength is processed in laser processing procedure is limited, and low to a same metal working (machining) efficiency simultaneously.
Semiconductor laser slow-axis direction BPP(Beam quality parameter) very large, its slow-axis direction beam quality is very poor, and quick shaft direction BPP(Beam quality parameter) smaller, same like this bar bar based semiconductor laser device quick shaft direction and slow-axis direction BPP do not mate and have limited its application, need the BPP of balance quick shaft direction and slow-axis direction, need complicated optical shaping to realize.
Generally cut the optical shaping mode of resetting with multiple prisms, this kind of method is that the pressure of direction large BPP is shared to the direction that BPP is little, and complex forms is reset in cutting, and energy loss is large.
In addition, the structure of a rarely seen chip package on a liquid chiller in the market, and optical shaping is more complicated, power is low.
Utility model content
The above-mentioned defect existing for solving prior art, it is a kind of for laser processing Multi-wavelength high-power semiconductor laser light source system that the utility model provides.
The technical solution of the utility model is as follows:
For laser processing Multi-wavelength high-power semiconductor laser light source system, comprise the folded battle array of semiconductor laser and the Shaping Module that is arranged at semiconductor laser light direction; It is characterized in that: each semiconductor laser element of semiconductor laser stacks is provided with two groups of different laser chips of wavelength, and wherein the first laser chip group and the second laser chip group go out parallel light, the wavelength of note the first laser chip group is λ
1, the wavelength of the second laser chip group is λ
2; Described Shaping Module comprises speculum and filter, and it is λ that this filter is coated with wavelength
1the high reflection of laser film and be λ to wavelength
2the high saturating film of laser; Described speculum is arranged in the first laser chip group bright dipping light path, described filter is arranged in the second laser chip group bright dipping light path, mirror mirror and filter be arranged in parallel, make the laser of the second laser chip group by the sharp combiner outgoing of filter and the first laser chip group.
Based on above-mentioned basic scheme, the utility model also does following optimization and limits and improve:
Above-mentioned speculum all becomes miter angle setting with filter in light path of living in.
Above-mentioned each semiconductor laser element comprises liquid refrigerating piece, insulating barrier and electrode layer; Wherein, liquid refrigerating piece is made up of conductive heat conducting material, this liquid refrigerating piece is divided into main body refrigeration area and chip installation area in the plane, the positive pole-face of described the first laser chip group and the second laser chip group is welded on chip installation area, insulating barrier welding covers on main body refrigeration area, and electrode layer integral solder covers on the negative pole face of insulating barrier and the first laser chip group and the second laser chip group.
Above-mentioned the first laser chip group and the second laser chip component are placed in the both sides of chip installation area, and described electrode layer is U-shaped corresponding to the part of chip installation area, and this U-shaped portion is adjacent to the first laser chip group and the second laser chip group.
Above-mentioned the first laser chip group and the second laser chip group all adopt one single chip.Can certainly form one group by two, three chips.
Above-mentioned electrode layer material is selected high heat-conductivity conducting material, can be gold, can be also copper; Insulating layer material is dielectric resin material, can be polyimides, polyester material, also can Ceramics.
The utlity model has following advantage:
On same liquid chiller, encapsulate two groups of laser chips, under same current, power output is encapsulated in a liquid chiller than one single chip and doubles, and in the time carrying out optical shaping, hot spot is higher than the energy of the laser of one single chip simultaneously; Select the laser chip of two groups of different wave lengths simultaneously, can realize the wide spectrum high-power output of multi-wavelength, can process multiple different metal material for laser processing application, in addition, compare to single wavelength, different wave length is in the time processing metal, and metal surface absorption efficiency is higher.
Electrode layer front end is set to U-shaped, and U-shaped portion is divided and is fitted on two chips, makes electrode layer front end be difficult for contacting and causing short circuit with the centre position of two chip installation areas in liquid chiller, makes laser device reliability higher; This radiating insulating structure has also guaranteed the radiating effect to two laser chips simultaneously.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Fig. 2 is optical system schematic diagram of the present utility model.
Fig. 3 is that in the utility model, any semiconductor laser is disassembled schematic diagram.
Drawing reference numeral explanation:
1-semiconductor laser stacks; 2-Shaping Module; 5-speculum; 6-liquid chiller; 7-the first semiconductor laser chip; 8-the second semiconductor laser chip; 9-insulating barrier; 10-electrode layer; 11-filter; 12,13,14,15-laser.
Embodiment
Comprise the folded battle array of semiconductor laser, Shaping Module for laser processing Multi-wavelength high-power semiconductor laser light source system;
Semiconductor laser stacks is that the first laser chip and the second laser chip are encapsulated on a refrigerator simultaneously, then forms stacking the refrigerator of multiple packaged chips.
Traditional refrigerator can only encapsulate a centimetre of cake core, is unfavorable for later stage optical shaping.
The utility model is that two laser chips are encapsulated on a refrigerator simultaneously, can in the process of later stage shaping, control like this size of hot spot preferably.
The first laser chip is different with the second laser chip wavelength, and described Shaping Module comprises speculum and filter.The first laser chip and the second laser chip go out parallel light and bright dipping is held level with both hands together; It is λ that the first laser chip sends wavelength
1laser, it is λ that the second laser chip sends wavelength
2laser, in the first laser chip exit direction, speculum is set, reflect for the laser that the first laser chip is sent.
In the second laser chip laser emitting direction, filter is set, it is λ that this filter is coated with wavelength
1the high reflection of laser film and be λ to wavelength
2the high saturating film of laser.
As depicted in figs. 1 and 2, the first laser chip 7 sends λ
1laser 12 after speculum 5 reflection for wavelength is λ
1laser 13 inject filter 11, the second laser chips 8 and send λ
2laser 14 be incident to filter 11, filter 11 is coated with wavelength X
1the film of the high reflection of laser, be coated with wavelength X
2the film of the high transmission of laser, wavelength is λ
1laser 13 and wavelength be λ
2laser 14 after filtration cross sheet close bundle export for multiwavelength laser 15.
Two laser chip different wave lengths, can realize the wide spectrum high-power output of multi-wavelength, can process multiple different metal material for laser processing application, compare to single wavelength, and multiwavelength laser is in the time processing metal, and metal surface absorption efficiency is higher.
As shown in Figure 3, liquid chiller comprises refrigeration main body and chip installation area, after chip installation area A and B place, chip installation area difference welding chip, at cooling piece main body place welding insulation layer, at chip and insulating barrier top welding electrode layer, described electrode layer front end is U-shaped, and U-shaped portion is adjacent to respectively chip.
Electrode layer material is selected high heat-conductivity conducting material, can be gold, can be also copper; Insulating layer material is dielectric resin material, can be polyimides, polyester material, also can Ceramics.
Claims (6)
1. for laser processing Multi-wavelength high-power semiconductor laser light source system, comprise the folded battle array of semiconductor laser and the Shaping Module that is arranged at semiconductor laser light direction; It is characterized in that: each semiconductor laser element of semiconductor laser stacks is provided with two groups of different laser chips of wavelength, and wherein the first laser chip group and the second laser chip group go out parallel light, the wavelength of note the first laser chip group is λ
1, the wavelength of the second laser chip group is λ
2; Described Shaping Module comprises speculum and filter, and it is λ that this filter is coated with wavelength
1the high reflection of laser film and be λ to wavelength
2the high saturating film of laser; Described speculum is arranged in the first laser chip group bright dipping light path, described filter is arranged in the second laser chip group bright dipping light path, mirror mirror and filter be arranged in parallel, make the laser of the second laser chip group by the sharp combiner outgoing of filter and the first laser chip group.
2. according to claim 1 for laser processing Multi-wavelength high-power semiconductor laser light source system, it is characterized in that: described speculum all becomes miter angle setting with filter in light path of living in.
3. according to claim 1 and 2 for laser processing Multi-wavelength high-power semiconductor laser light source system, it is characterized in that: described each semiconductor laser element comprises liquid refrigerating piece, insulating barrier and electrode layer; Wherein, liquid refrigerating piece is made up of conductive heat conducting material, this liquid refrigerating piece is divided into main body refrigeration area and chip installation area in the plane, the positive pole-face of described the first laser chip group and the second laser chip group is welded on chip installation area, insulating barrier welding covers on main body refrigeration area, and electrode layer integral solder covers on the negative pole face of insulating barrier and the first laser chip group and the second laser chip group.
4. according to claim 3 for laser processing Multi-wavelength high-power semiconductor laser light source system, it is characterized in that: the first laser chip group and the second laser chip component are placed in the both sides of chip installation area, described electrode layer is U-shaped corresponding to the part of chip installation area, and this U-shaped portion is adjacent to the first laser chip group and the second laser chip group.
5. according to claim 4 for laser processing Multi-wavelength high-power semiconductor laser light source system, it is characterized in that: the first laser chip group and the second laser chip group all adopt one single chip.
6. according to claim 3 for laser processing Multi-wavelength high-power semiconductor laser light source system, it is characterized in that: described electrode layer material adopts gold or copper, and insulating layer material is polyimides, polyester material or pottery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320677666.1U CN203631978U (en) | 2013-10-29 | 2013-10-29 | Multi-wavelength high-power semiconductor laser device light source system used for laser processing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320677666.1U CN203631978U (en) | 2013-10-29 | 2013-10-29 | Multi-wavelength high-power semiconductor laser device light source system used for laser processing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203631978U true CN203631978U (en) | 2014-06-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320677666.1U Withdrawn - After Issue CN203631978U (en) | 2013-10-29 | 2013-10-29 | Multi-wavelength high-power semiconductor laser device light source system used for laser processing |
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| Country | Link |
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| CN (1) | CN203631978U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103532018A (en) * | 2013-10-29 | 2014-01-22 | 西安炬光科技有限公司 | Light source system for laser processing of multi-wavelength and high-power semiconductor lasers |
| CN108336640A (en) * | 2017-01-20 | 2018-07-27 | 山东华光光电子股份有限公司 | A kind of high-power semiconductor laser and preparation method thereof |
| US10698169B1 (en) | 2019-04-30 | 2020-06-30 | Shunsin Technology (Zhong Shan) Limited | Module with wavelength-based directional bias of light for receiving and transmitting optical signals |
-
2013
- 2013-10-29 CN CN201320677666.1U patent/CN203631978U/en not_active Withdrawn - After Issue
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103532018A (en) * | 2013-10-29 | 2014-01-22 | 西安炬光科技有限公司 | Light source system for laser processing of multi-wavelength and high-power semiconductor lasers |
| CN103532018B (en) * | 2013-10-29 | 2016-06-15 | 西安炬光科技有限公司 | For laser machining Multi-wavelength high-power semiconductor laser light source system |
| CN108336640A (en) * | 2017-01-20 | 2018-07-27 | 山东华光光电子股份有限公司 | A kind of high-power semiconductor laser and preparation method thereof |
| CN108336640B (en) * | 2017-01-20 | 2024-02-09 | 山东华光光电子股份有限公司 | High-power semiconductor laser and preparation method thereof |
| US10698169B1 (en) | 2019-04-30 | 2020-06-30 | Shunsin Technology (Zhong Shan) Limited | Module with wavelength-based directional bias of light for receiving and transmitting optical signals |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20140604 Effective date of abandoning: 20160615 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |