CN203631973U - High-power semiconductor laser light source system used for laser processing - Google Patents
High-power semiconductor laser light source system used for laser processing Download PDFInfo
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- CN203631973U CN203631973U CN201320676948.XU CN201320676948U CN203631973U CN 203631973 U CN203631973 U CN 203631973U CN 201320676948 U CN201320676948 U CN 201320676948U CN 203631973 U CN203631973 U CN 203631973U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000012545 processing Methods 0.000 title claims abstract description 13
- 230000010287 polarization Effects 0.000 claims abstract description 44
- 238000007493 shaping process Methods 0.000 claims abstract description 12
- 230000008878 coupling Effects 0.000 claims description 27
- 238000010168 coupling process Methods 0.000 claims description 27
- 238000005859 coupling reaction Methods 0.000 claims description 27
- 238000007598 dipping method Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
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Abstract
The utility model provides a high-power semiconductor laser light source system used for laser processing. A semiconductor laser device stack array of the high-power semiconductor laser light source system is provided with multiple bars which are integrally divided into groups A and B. The bars of groups A and B are consistent in polarization state. A shaping module comprises a half-wave plate, a reflection mirror and a polarization beam-combining sheet which is arranged on an emergent light path of the group A bars. The reflection mirror is arranged on the emergent light path of the group B bars. The mirror surface of the reflection mirror and the polarization beam-combining sheet are arranged in parallel. The half-wave plate is arranged on an incident light path or a reflection light path of the reflection mirror so that beams of laser of the group B bars and the beams of laser of the group A bars are combined at the polarization beam-combing sheet to be emergent. The optical system is concise in structure, and the arrangement position of the reflection mirror and the polarization beam-combining sheet can be next to a semiconductor laser device so that volume of the system is small; besides, the semiconductor laser devices stack array with the consistent polarization state is selected so that processing is convenient and realization cost is relatively low.
Description
Technical field
The utility model belongs to technical field of laser processing, relates to a kind of high-power semiconductor laser source system.
Background technology
High-power semiconductor laser has the advantages such as volume is little, lightweight, efficiency is high, the life-span is long, be widely used in laser processing, laser medicine, laser display and field of scientific study, become the core devices that new century development is fast, achievement is many, subject infiltration is wide, range of application is large.Semiconductor laser is just towards high-power future development, and especially in fields such as laser processings, the multikilowatt continuous wave output of semiconductor laser has become inevitable demand.And along with the working depth to workpiece increases, more high-output power, more the semiconductor laser of small light spot is badly in need of development.But compared with other lasers, the beam quality of semiconductor laser is poor, the beam quality of fast and slow axis is inhomogeneous, and far field light intensity is oval Gaussian Profile, focuses on difficulty larger, realizes compared with the Laser output of small light spot and being difficult for.
Semiconductor laser slow-axis direction BPP(Beam quality parameter) very large, its slow-axis direction beam quality is very poor, and quick shaft direction BPP(Beam quality parameter) smaller, same like this bar bar based semiconductor laser device quick shaft direction and slow-axis direction BPP do not mate and have limited its application, need the BPP of balance quick shaft direction and slow-axis direction, need complicated optical shaping to realize.
Generally cut the optical shaping mode of resetting with multiple prisms, this kind of method is that the pressure of direction large BPP is shared to the direction that BPP is little, and complex forms is reset in cutting, and energy loss is large.
Utility model content
The above-mentioned defect existing for solving prior art, the utility model provides a kind of high-power semiconductor laser source system for laser processing.
The technical solution of the utility model is as follows:
For a high-power semiconductor laser light-source system for laser processing, comprise the folded battle array of semiconductor laser and Shaping Module; Semiconductor laser stacks has multiple bar bars, and multiple bar bar entirety is divided into two groups of A, B, and the polarization state of A, two groups of bar bars of B is consistent; Described Shaping Module comprises 1/2nd wave plates, speculum and polarization coupling sheet; Described polarization coupling sheet is arranged in A group bar bar bright dipping light path, described speculum is arranged in B group bar bar bright dipping light path, mirror mirror and polarization coupling sheet be arranged in parallel, described 1/2nd wave plates are arranged in the input path or reflected light path of speculum, make the laser of B group bar bar through reflexing to the sharp combiner outgoing of polarization coupling sheet and A group bar bar.
Above-mentioned speculum all becomes miter angle setting with polarization coupling sheet in light path of living in.
Above-mentioned A group bar bar equates with B group bar bar quantity.
According to the spacing of adjacent bar bar in semiconductor laser stacks, also can adjust the position of speculum, polarization coupling sheet, make the laser of B group bar bar close bundle outgoing at the laser plug hole of polarization coupling sheet place and A group bar bar.That is, speculum and polarization beam combiner are staggered, and bundle is closed in the light dislocation of the light of polarization beam combiner reflection and transmission, and the power pressure of polarization beam combiner is less, restraints the power density threshold value that polarization beam combiner carries together have relatively high expectations if close; And close the hot spot good uniformity after bundle.
The utlity model has following advantage:
The utility model optical system structure is simple and clear, only utilizes these three kinds of common optics of 1/2nd wave plates, speculum and polarization coupling sheet, has realized high power laser light output.Speculum and polarization coupling sheet placement location can be near semiconductor lasers, make system bulk less.
The utility model is selected the semiconductor laser stacks that polarization state is consistent, easy to process, realizes cost lower.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of an embodiment of the present utility model.
Fig. 2 is the schematic diagram of another embodiment of the present utility model.
Fig. 3 is the schematic diagram of an embodiment being equal to of Fig. 1.
Drawing reference numeral explanation:
1-semiconductor laser stacks A group bar bar; 2-semiconductor laser stacks B group bar bar; 3-1/2nd wave plates; 4-speculum; 5-polarization coupling sheet; 6-Shaping Module; 7-A group bar bar institute Emission Lasers; The laser that 8-B group bar bar is launched after 1/2nd wave plates; 9-closes the laser after bundle; 10-semiconductor laser stacks; The direct emitting laser of 11-.
Embodiment
As shown in Figure 1, this high-power semiconductor laser light-source system comprises the folded battle array of semiconductor laser, Shaping Module; Semiconductor laser stacks 10 has multiple bar bars, and all bar bars are divided into two groups of A, B.A group bar bar 1 is consistent with the polarization state of B group bar bar 2.Shaping Module 5 comprises 1/2nd wave plates 3, speculum 4 and polarization coupling sheet 5; Wherein polarization coupling sheet is to TE(or TM) carry out transmission, to TM(or TE) reflect.In A group bar bar 1 laser emitting direction, polarization coupling sheet 5 is set, set gradually 1/2nd wave plates 3, speculum 4 in B group bar bar 2 laser emitting directions, or also 1/2nd wave plates 3 can be arranged on the reflected light path between speculum 4 and polarization coupling sheet 5 (as shown in Figure 2).
As shown in Figure 3, all bar bars of the folded battle array of semiconductor laser also can entirety be divided into three parts, between going back between aforementioned A group bar bar and B group bar bar, be separated with a small amount of bar bar, accordingly, polarization coupling sheet and speculum upwards keep certain intervals at bright dipping light path, make the laser of described a small amount of bar bar from directly passing outgoing between polarization coupling sheet and speculum.Because in fact this part a small amount of laser do not pass through shaping, do not relate to Shaping Module, therefore, this kind of embodiment can be regarded the equivalent of aforementioned schemes as, also should be in protection range of the present utility model.
The utility model can be realized high-power output more than multikilowatt.
Claims (4)
1. for a high-power semiconductor laser source system for laser processing, comprise the folded battle array of semiconductor laser and Shaping Module; It is characterized in that: semiconductor laser stacks has multiple bar bars, multiple bar bar entirety is divided into two groups of A, B, and the polarization state of A, two groups of bar bars of B is consistent; Described Shaping Module comprises 1/2nd wave plates, speculum and polarization coupling sheet; Described polarization coupling sheet is arranged in A group bar bar bright dipping light path, described speculum is arranged in B group bar bar bright dipping light path, mirror mirror and polarization coupling sheet be arranged in parallel, described 1/2nd wave plates are arranged in the input path or reflected light path of speculum, make the laser of B group bar bar and the laser of A group bar bar form and close bundle outgoing at polarization coupling sheet place.
2. the high-power semiconductor laser source system for laser processing according to claim 1, is characterized in that: speculum all becomes miter angle setting with polarization coupling sheet in light path of living in.
3. the high-power semiconductor laser source system for laser processing according to claim 1, is characterized in that: A group bar bar equates with B group bar bar quantity.
4. the high-power semiconductor laser source system for laser processing according to claim 1, it is characterized in that: according to the spacing of adjacent bar bar in semiconductor laser stacks, adjust the position of speculum, polarization coupling sheet, make the laser of B group bar bar close bundle outgoing at the laser plug hole of polarization coupling sheet place and A group bar bar.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320676948.XU CN203631973U (en) | 2013-10-29 | 2013-10-29 | High-power semiconductor laser light source system used for laser processing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320676948.XU CN203631973U (en) | 2013-10-29 | 2013-10-29 | High-power semiconductor laser light source system used for laser processing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203631973U true CN203631973U (en) | 2014-06-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320676948.XU Expired - Lifetime CN203631973U (en) | 2013-10-29 | 2013-10-29 | High-power semiconductor laser light source system used for laser processing |
Country Status (1)
| Country | Link |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103532015A (en) * | 2013-10-29 | 2014-01-22 | 西安炬光科技有限公司 | High-power semiconductor laser light source system for laser processing |
| CN109638649A (en) * | 2019-01-14 | 2019-04-16 | 北京工业大学 | A kind of high power semiconductor folds the method and device of battle array space conjunction beam |
-
2013
- 2013-10-29 CN CN201320676948.XU patent/CN203631973U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103532015A (en) * | 2013-10-29 | 2014-01-22 | 西安炬光科技有限公司 | High-power semiconductor laser light source system for laser processing |
| CN109638649A (en) * | 2019-01-14 | 2019-04-16 | 北京工业大学 | A kind of high power semiconductor folds the method and device of battle array space conjunction beam |
| CN109638649B (en) * | 2019-01-14 | 2020-11-03 | 北京工业大学 | High-power semiconductor stacked array space beam combination method and device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 710099 No. 56 Zhang 86 Road, Xi'an High-tech Zone, Shaanxi Province Patentee after: Focuslight Technologies Inc. Address before: 710119 Third Floor, Building 10, 17 Information Avenue, New Industrial Park, Xi'an High-tech Zone, Shaanxi Province Patentee before: XI'AN FOCUSLIGHT TECHNOLOGIES Co.,Ltd. |
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| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140604 |