CN103579905A - Space overlaid and coupled high-power semiconductor laser stack array system - Google Patents
Space overlaid and coupled high-power semiconductor laser stack array system Download PDFInfo
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- CN103579905A CN103579905A CN201310562384.1A CN201310562384A CN103579905A CN 103579905 A CN103579905 A CN 103579905A CN 201310562384 A CN201310562384 A CN 201310562384A CN 103579905 A CN103579905 A CN 103579905A
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Abstract
The invention discloses a space overlaid and coupled high-power semiconductor laser stack array system. The space overlaid and coupled high-power semiconductor laser stack array system comprises a first semiconductor laser stack array and a second semiconductor laser stack array which are respectively formed by overlaying a plurality of semiconductor labor diode bars in the direction of a fast axis, wherein the number of the diode bars of the first semiconductor laser stack array is equal to the number of the diode bars of the second semiconductor laser stack array. The space overlaid and coupled high-power semiconductor laser stack array system further comprises a first fast axis collimating lens set, a second fast axis collimating lens set, a first slow axis collimating lens array set, a second slow axis collimating lens array set, a periodical space coupling lens, a slow axis beam expanding system and a focus lens. The two laser stack arrays in the system are overlapped in the space through a periodical space coupling lens to output a high-power laser, the beam collimation is achieved through the fast axis collimating lenses and the slow axis collimating lenses, the characteristics of high brightness and linear polarization are kept, and meanwhile internal components are protected through an added feedback optical isolation system. The problem that the existing semiconductor laser technology is complex is effectively solved, and even high-power and strip-shaped light spots are output.
Description
Technical field
The invention belongs to laser technology field, be specifically related to the folded array 1 system of a kind of space stack coupling high-power semiconductor laser.
Background technology
Laser is because brightness is high, power density is high, heat effect region is little, materials processing is short action time, process velocity is fast, noncontact processing, without " cutter " wearing and tearing, without " cutting force ", acting on workpiece can be to various metals, nonmetal processing, high rigidity particularly, high fragility and materials with high melting point and digital control system mix proportion laser processing center, heat affected area is little, workpiece deformation is little, following process amount small-scale production efficiency is high, crudy is reliable and stable, solved the insurmountable difficult problem of many conventional methods, operating efficiency and crudy have greatly been improved, at present, the manufacturing industry of developed country is stepped into " light processing " epoch.In laser processing industry, semiconductor laser is because volume is little, quality is light, efficiency is high, the life-span is long and the high extensive attention that causes people of cost performance.The raising greatly of the power efficiency of industrial semiconductor laser in recent years, makes it greatly to be paid close attention in the application in material processed field.
Because commercial Application laser output power improves constantly, and will obtain high laser output power, vertical folded battle array becomes current first-selected structure.The major technique challenge of vertical folded battle array encapsulation is that beam quality, spectrum are controlled and the control problem of polarization characteristic, and vertically folded array semiconductor laser respectively clings to that the inhomogeneous chilling temperature that causes clinging to bar of the hot phase mutual interference, the current that produce between bar is inhomogeneous all will cause clinging to wave length shift and the spectrum widening of bar.Beam Control comprises that output facula size Control, optical intensity density are evenly controlled and beam Propagation direction is controlled, and therefore needs design and installation beam shaping and stack coupled system, to guarantee high-power output, beam quality and to point to and control.
At present, in order to obtain high laser output power, conventionally the folded battle array of two semiconductor lasers is stacked up by polarization coupled mirror.In the folded battle array of existing semiconductor laser, by polariscope, be coupled in the structure superposeing, conventionally by vertical placement of the folded battle array of two semiconductor lasers, output light is horizontal polarization, realize polariscope coupling stack, wherein a road is provided with and will puts into 1/2 wave plate and become vertical polarization for Jiang Gai road laser polarization direction 90-degree rotation in light path, and on the interface of the light path of two folded battle arrays of semiconductor laser, be provided with a polariscope for by two-way laser by the polariscope stack that is coupled.Mainly there are following three problems in this polariscopic use: 1) this polariscope should be by 59.4 ° of placements of Brewster's angle in light path, but this angle is wayward in actual fabrication process, and micro-energy loss that partially can make of angle is excessive; 2) this polariscope also can be made 45 degree normal incidences, but under this angle, its rete design comparison is complicated, is difficult to realize in technique, and normally result loss ratio is larger.3) light of output is not linearly polarized light, cannot be by adding feedback protection system effectively to protect laser internal components.Meanwhile, 0 grade of 1/2 wave plate arranging in the folded battle array of semiconductor laser light path glues together installation conventionally, fragile when high power laser light passes through.
Summary of the invention
For the defect existing in above-mentioned prior art or deficiency; the object of the invention is to; provide a kind of space stack coupling high-power semiconductor laser folded array 1 system; two-way laser stacking array in this system is spatially by periodicity Space Coupling mirror stack output high-power laser; beam collimation adopts fast axis collimation lens and slow axis collimating lens array to realize; the characteristic that keeps high brightness and linear polarization, meanwhile, has added feedback light shielding system protection internal components.Efficiently solve the complexity problem of existing semiconductor laser technique, the bar shaped uniform light spots of output high-power.
To achieve these goals, the present invention adopts following technical scheme to be solved:
The folded array 1 system of a kind of space stack high-power semiconductor laser, comprise the folded battle array of the first semiconductor laser, the folded battle array of the second semiconductor laser, folded gust of described the first semiconductor laser and the folded battle array of the second semiconductor laser are formed by stacking along quick shaft direction by a plurality of semiconductor lasers bar bars, and these two the folded gust semiconductor laser comprising bar bar quantity is identical; Also comprise the first fast axis collimation lens group, the second fast axis collimation lens group, the first slow axis collimating lens array group, the second slow axis collimating lens array group, periodicity Space Coupling mirror, slow axis beam-expanding system, focus lamp; Wherein:
Described the first fast axis collimation lens group forms by clinging to semiconductor laser in the folded battle array of semiconductor laser a plurality of collimating lenses that bar number is identical with the second fast axis collimation lens group; The quantity of the first fast axis collimation lens group is identical with the quantity of semiconductor laser bar bar in the folded battle array of the first semiconductor laser; In the second fast axis collimation lens group, the quantity of collimating lens is identical with the quantity of semiconductor laser bar bar in the folded battle array of the second semiconductor laser; The first slow axis collimating lens array group and the second slow axis collimating lens array group form by a plurality of collimating lens arrays; In the first slow axis collimating lens array group, the quantity of collimating lens array is identical with the quantity of semiconductor laser bar bar in the folded battle array of the first semiconductor laser; In the second slow axis collimating lens array group, the quantity of collimating lens array is identical with the quantity of semiconductor laser bar bar in the folded battle array of the second semiconductor laser;
Each collimating lens in described the first fast axis collimation lens group is parallel and place with one heart with respect to semiconductor laser bar bar corresponding in the folded battle array of the first semiconductor laser, and the focal length that is this collimating lens of distance between the two; In the folded battle array of each collimating lens in the second fast axis collimation lens group and the second semiconductor laser, corresponding semiconductor laser clings to the parallel and concentric placement of bar, and the focal length that is fast axis collimation lens of distance between the two; Each collimating lens array of the first slow axis collimating lens array group is parallel and placement with one heart with respect to bar bar corresponding in the folded battle array of the first semiconductor laser, and distance is between the two the focal length of this slow axis collimating lens array; Each collimating lens array of the second slow axis collimating lens array group is parallel and placement with one heart with respect to bar bar corresponding in the folded battle array of the second semiconductor laser, and distance is between the two the focal length of this slow axis collimating lens array;
The light beam that the folded paroxysm of described the first semiconductor laser goes out becomes the first directional light successively after the first fast axis collimation lens group, the first slow axis collimating lens array group collimate on fast, slow-axis direction, and the light beam being sent by each semiconductor laser bar bar in the first directional light is of a size of 1/2nd bar stripe pitch; The light beam that the folded paroxysm of the second semiconductor laser goes out becomes the second directional light through the second fast axis collimation lens group, the second slow axis collimating lens array group successively after fast, slow-axis direction collimate, and the light beam being sent by each semiconductor laser bar bar in the second directional light is of a size of 1/2nd bar stripe pitch; Periodically the angle of Space Coupling mirror place face and the first directional light, the second directional light is 45 °, the first directional light all sees through through periodicity Space Coupling mirror, the second directional light is to arrive periodically Space Coupling mirror perpendicular to the first parallel direction of light, after periodicity Space Coupling mirror carries out 45 ° of reflections, superpose in the same way and mutually with the first directional light by periodicity Space Coupling mirror, stack light beam is adjusted slow axis through slow axis beam-expanding system and is expanded multiple, output after focusing on finally by condenser lens.
The present invention also comprises following other technologies feature:
Described periodicity Space Coupling mirror is device periodically, and 1/2 cycle above in its one-period is 45 ° of full impregnateds, below 45 ° high of 1/2 cycles anti-, an one periodic width equates with the spacing that semiconductor laser clings to bar.
Described periodicity Space Coupling mirror is arranged and is fixed as one by 1/2nd bar stripe pitch by a plurality of 45 ° of speculums of 1/2nd bar stripe pitch width and forms, or adopts 45 ° of speculums of a monoblock to form by laser along continuous straight runs etching.
This system also comprises the feedback light insulation blocking system being comprised of polariscope, quarter-wave plate and light stopper, described polariscope and quarter-wave plate are arranged between slow axis beam-expanding system and condenser lens, polariscope be arranged in parallel with periodicity Space Coupling mirror, and light stopper is arranged on a polariscopic side; Light beam after slow axis beam-expanding system first arrives polariscope, the light of polariscopic horizontal polarization is through quarter-wave plate polarization direction rotation 45 degree, after returning, processing work surface reflection again by this quarter-wave plate polarization direction, rotates again 45 degree, twice by this quarter-wave plate polarization direction work 90-degree rotation, by horizontal polarization, become vertical polarization, again arrive after polariscope by height instead to light stopper, light stopper is derived above-mentioned light beam.
In the folded battle array of the folded battle array of described the first semiconductor laser the 1 and second semiconductor laser, the beam sizes of each semiconductor laser bar bar after quick shaft direction collimation is 1/2nd bar stripe pitch, and the folded battle array of the second semiconductor laser exceeds 1/2nd bar stripe pitch than the folded battle array 1 of the first semiconductor laser on quick shaft direction; Periodically Space Coupling mirror exceeds 1/4th bar stripe pitch than the folded battle array of the second semiconductor laser at quick shaft direction, than the folded battle array of the first semiconductor laser, exceeds 3/4ths bar stripe pitch on quick shaft direction.
Described light stopper adopts and is provided with 45 degree taper concave surface metal derbies, on its concave surface, scribbles black.
The folded battle array of 3000 watts that 25 semiconductor laser bar bars that it is 120W that the folded battle array of described the first semiconductor laser and the folded battle array of the second conductor Laser all adopt by 976nm, power are formed by stacking along quick shaft direction.
Compare with the folded array 1 system of existing semiconductor laser, advantage of the present invention is as follows:
1, adopt the folded battle array of two semiconductor lasers as light source; after the axial standard successively of speed; by periodicity Space Coupling mirror coupled room, superpose; guaranteed the output of high power line polarization output uniform light spots, also made to add feedback light insulation blocking system to avoid laser inside to suffer damage and become feasible.
The system works safety and stability that the setting of the feedback light insulation blocking system 2, being comprised of polariscope, quarter-wave plate and light stopper makes, and can improve system useful life.
3, the setting of slow axis beam-expanding system can realize the even adjustable strip light spots that processing needs.
4, it is adjustable that the setting of condenser lens can realize on processing work laser power density.
5, simple and compact for structure, efficiency is high, and stable performance is easy to installment and debugging.
Accompanying drawing explanation
Fig. 1 is the structure principle chart of the folded array 1 system of space stack coupling high-power semiconductor laser of the present invention.
Fig. 2 is the structural representation that in embodiment, the first semiconductor laser is folded battle array or the folded battle array of the second semiconductor laser, and folded battle array comprises that 25 semiconductor lasers cling to bars.
Fig. 3 is the structural representation of periodicity Space Coupling mirror in embodiment, comprises 25 cycles.
Fig. 4 is the folded battle array of the first semiconductor laser in embodiment, the folded battle array of the second semiconductor laser and the spatial distribution schematic diagram of periodicity Space Coupling mirror on quick shaft direction.
The schematic diagram of the feedback light insulation blocking system that Fig. 5 is comprised of polariscope, quarter-wave plate and light stopper.
Below in conjunction with the drawings and specific embodiments, the present invention is further explained.
Embodiment
As shown in Figure 1, stack high-power semiconductor laser in space of the present invention is folded array 1 system, comprises the folded battle array of the folded battle array of the first semiconductor laser the 1, second semiconductor laser the 2, first fast axis collimation lens group 3, the second fast axis collimation lens group 4, the first slow axis collimating lens array group 5, the second slow axis collimating lens array group 6, periodicity Space Coupling mirror 7, slow axis beam-expanding system 8, focus lamp 9, polariscope 11, quarter-wave plate 12 and light stopper 13.
As shown in Figure 2, the folded battle array 2 of folded gust the 1 and second semiconductor laser of the first semiconductor laser is formed by stacking along quick shaft direction by a plurality of semiconductor lasers bar bars, and these two the folded gust semiconductor laser comprising bar bar quantity is identical; Output needs to determine according to laser system for the wavelength of semiconductor laser bar bar and power.
The first fast axis collimation lens group 3 and the second fast axis collimation lens group 4 form by a plurality of collimating lenses; The quantity of the first fast axis collimation lens group 3 is identical with the quantity of semiconductor laser bar bar in the folded battle array 1 of the first semiconductor laser.In the second fast axis collimation lens group 4, the quantity of collimating lens is identical with the quantity of semiconductor laser bar bar in the folded battle array 2 of the second semiconductor laser.The first slow axis collimating lens array group 5 and the second slow axis collimating lens array group 6 form by a plurality of collimating lens arrays; In the first slow axis collimating lens array group 5, the quantity of collimating lens array is identical with the quantity of semiconductor laser bar bar in the folded battle array 1 of the first semiconductor laser.In the second slow axis collimating lens array group 6, the quantity of collimating lens array is identical with the quantity of semiconductor laser bar bar in the folded battle array 2 of the second semiconductor laser.Collimating lens is conventional optical element, can select as required.
Wherein, each collimating lens in the first fast axis collimation lens group 3 is parallel and place with one heart with respect to semiconductor laser bar bar corresponding in the folded battle array of the first semiconductor laser 1, and the focal length that is this collimating lens of distance between the two; In the folded battle array 2 of each collimating lens in the second fast axis collimation lens group 4 and the second semiconductor laser, corresponding semiconductor laser clings to the parallel and concentric placement of bar, and the focal length that is fast axis collimation lens of distance between the two.Thereby obtain the laser beam output of quick shaft direction homogenizing; Each collimating lens array of the first slow axis collimating lens array group 5 is parallel and placement with one heart with respect to bar bar corresponding in the folded battle array of the first semiconductor laser, and distance is between the two the focal length of this slow axis collimating lens array; Each collimating lens array of the second slow axis collimating lens array group 6 is parallel and placement with one heart with respect to bar bar corresponding in the folded battle array of the second semiconductor laser, and distance is between the two the focal length of this slow axis collimating lens array.
Periodically Space Coupling mirror 7 be critical component of the present invention, as shown in Figure 3, periodically in the one-period of Space Coupling mirror 7, above 1/2 cycle be 45 ° of full impregnateds, below 45 ° high of 1/2 cycles anti-, one-period width with cling to stripe pitch and equate.During actual fabrication, can adopt a plurality of 45 ° of speculums of 1/2nd bar stripe pitch width arrange and be fixed as one by 1/2nd bar stripe pitch, also can adopt 45 ° of speculums of a monoblock to form by laser along continuous straight runs etching, the cycle is bar stripe pitch.
Slow axis beam-expanding system 8 is conventional optical element, and at present supplier is such as the Thorlabs of the U.S., the LIMO of Germany, and the Dayoptics of China etc., can select as required.
As Figure 1 and Figure 4, the folded battle array of the first semiconductor laser 1 light beam sending becomes the first directional light successively after the first fast axis collimation lens group 3, the first slow axis collimating lens array group 5 collimate on fast, slow-axis direction, and the light beam being sent by each semiconductor laser bar bar in the first directional light is of a size of 1/2nd bar stripe pitch; The folded battle array of the second semiconductor laser 2 light beams that send become the second directional light through the second fast axis collimation lens group 4, the second slow axis collimating lens array group 6 successively after fast, slow-axis direction collimate, and the light beam being sent by each semiconductor laser bar bar in the second directional light is of a size of 1/2nd bar stripe pitch; The first directional light all sees through through periodicity Space Coupling mirror 7, the second directional light is to arrive periodically Space Coupling mirror perpendicular to the first parallel direction of light, after periodicity Space Coupling mirror 7 carries out 45 ° of reflections, superpose in the same way and mutually with the first directional light by periodicity Space Coupling mirror 7, stack light beam is adjusted slow axis through slow axis beam-expanding system 8 and is expanded multiple; Then after polariscope 11, enter quarter-wave plate 12, output after focusing on finally by condenser lens 9.
The effect of each parts of system of the present invention is as follows:
The folded battle array 2 of the folded battle array of the first semiconductor laser the 1 and second semiconductor laser spatially superposes as light source, guarantees to obtain the high-output power that meets industrial processes needs.The first fast axis collimation lens group 3 and the second fast axis collimation lens group 4 collimate to the fast axial light bundle of the folded battle array 2 of the folded battle array of the first semiconductor laser the 1 and second semiconductor laser respectively; The first slow axis collimating lens array group 5 and the second slow axis collimating lens array group 6 collimate to the slow axis beam of the folded battle array 2 of the folded battle array of the first semiconductor laser the 1 and second semiconductor laser respectively, the laser beam output of, slow axis homogenizing fast to obtain.Periodically Space Coupling mirror 7 forms spatially stack coupling of the folded battle array 2 of folded gust the 1 and second semiconductor laser of the first semiconductor laser raising power output, and keeps the characteristic of high brightness and linear polarization.Slow axis beam-expanding system 8 can carry out focal length selection as required, adjusts slow axis and expands multiple to meet the adjusting to strip light spots length.Condenser lens 9 can carry out focal length selection as required to meet the requirement of 10 pairs of laser power densities of processing work and sharp keen length.Polariscope 11, quarter-wave plate 12 and light stopper 13 form feedback light insulation blocking system (as shown in Figure 5), for avoiding feedback light retrieval system to damage system.Its principle is: polariscope 11 is, orthogonal polarized light high anti-polarization coupled mirror high thoroughly to horizontal polarization light.The light that sees through the horizontal polarization of polariscope 11 rotates 45 degree through quarter-wave plate 12 polarization directions, after returning, processing work surface reflection again by these quarter-wave plate 12 polarization directions, rotates again 45 degree, twice by these quarter-wave plate 12 polarization direction work 90-degree rotations, by original horizontal polarization, become vertical polarization, again arrive polariscope 11 rear by height instead to light stopper 13, light stopper 13 is derived above-mentioned light beam, to avoid beam reflection to return original optical path, laser is caused to permanent damage.
The operation principle of system of the present invention:
As shown in Figure 1, shown in Figure 5, the first fast axis collimation lens group 3 and the second fast axis collimation lens group 4 are carried out fast axle and slow-axis direction collimation to the folded battle array 2 of the folded battle array of the first semiconductor laser the 1, second semiconductor laser respectively, obtain laser beam fast, slow axis beam quality homogenizing.Semiconductor laser bar bar beam sizes after quick shaft direction collimation in the folded battle array of each semiconductor laser is controlled at half of bar stripe pitch, the folded battle array 1 of the first semiconductor laser, semiconductor laser bar bar corresponding in the folded battle array 2 of the second semiconductor laser is 1/2nd bar bars at the space length of quick shaft direction, the collimated light beam of all semiconductor laser bar of the folded battle array 1 of the first semiconductor laser bar output is all seen through through periodicity Space Coupling mirror 7, and the collimated light beam of folded battle array 2 outputs of the second semiconductor laser is through the whole 45 ° of reflections of periodicity Space Coupling mirror 7, transmitted light (the first directional light) and reverberation (the second directional light) are through the 7 rear space stacks of periodicity Space Coupling mirror, realize high-power output, and guaranteed output polarization of light characteristic, make whole system easily add feedback light insulation blocking system.From the light beam of periodicity Space Coupling mirror 7 outputs, pass through slow axis beam-expanding system 8, backward feedback light changes 90 ° through quarter-wave plate 12 rear polarizer directions twice and incides polariscope 11, through polariscope 11, reflex to light stopper 13, taper concave surface blacking on light stopper 13, damages system to avoid feedback light to return; Process its processing on the surface that focuses on workpiece 10 after final beam line focus mirror 9, and the back focal plane of condenser lens 9 overlaps with processing work 10 surfaces.
Below the embodiment that inventor provides.
Embodiment:
Follow technical scheme of the present invention, the space stack coupling high-power semiconductor laser of the present embodiment is folded array 1 system, comprises the folded battle array of the folded battle array of the first semiconductor laser the 1, second semiconductor laser the 2, first fast axis collimation lens group 3, the second fast axis collimation lens group 4, the first slow axis collimating lens array group 5, the second slow axis collimating lens array group 6, periodicity Space Coupling mirror 7, slow axis beam-expanding system 8, focus lamp 9, polariscope 11, quarter-wave plate 12 and light stopper 13.Wherein:
The folded battle array 2 of the folded battle array of the first semiconductor laser the 1, second conductor Laser is identical, the folded battle array of 3000 watts that 25 semiconductor laser bar bars that they all adopt by 976nm, power is 120W are formed by stacking along quick shaft direction.The gross power of the folded battle array 2 of the folded battle array of the first semiconductor laser the 1, second conductor Laser is 6000 watts.As shown in Figure 3, periodically Space Coupling mirror 7 adopts 45 ° of speculums of 25 wide 1/2nd bar stripe pitch spatially to arrange and be formed by stacking by 1/2nd bar stripe pitch.Light stopper 13 adopts and is provided with 45 degree taper concave surface metal derbies, on its concave surface, scribbles black.
In the light path of the folded battle array 1 of the first semiconductor laser, set gradually the first fast axis collimation lens 3, the first slow axis collimating lens array 5, periodicity Space Coupling mirror 7, slow axis beam-expanding system 8, polariscope 11, quarter-wave plate 12 and focus lamp 9; Wherein, the first fast axis collimation lens 3, the first slow axis collimating lens array 5, slow axis beam-expanding system 8, focus lamp 9 and quarter-wave plate 12 all cling to the parallel and concentric setting of bar laser array 1 place face with the first semiconductor; In the light path of the folded battle array 2 of the second semiconductor laser, set gradually the second fast axis collimation lens 4, the second slow axis collimating lens array 6 and periodicity Space Coupling mirror 7.
The light beam of folded battle array 1 output of the first semiconductor laser becomes the first directional light after fast axle and slow-axis direction collimation, the light beam of folded battle array 2 outputs of the second semiconductor laser becomes the second directional light after fast axle and slow-axis direction collimation, and the second directional light and the first directional light are perpendicular.Periodically the angle of Space Coupling mirror 7 place faces and the first directional light, the second directional light is 45 °.The first directional light all passes through from periodicity Space Coupling mirror 7, and the second directional light arrives the periodically reflecting surface of Space Coupling mirror 7.
As shown in Figure 4, in the folded battle array 2 of the folded battle array of the first semiconductor laser the 1 and second semiconductor laser, the beam sizes of each semiconductor laser bar bar after quick shaft direction collimation is 1/2nd bar stripe pitch, and the folded battle array 2 of the second semiconductor laser exceeds 1/2nd bar stripe pitch than the folded battle array 1 of the first semiconductor laser on quick shaft direction; Periodically the folded battle array 2 of Space Coupling mirror 7 to the second semiconductor lasers exceeds 1/4th bar stripe pitch at quick shaft direction, than the folded battle array 1 of the first semiconductor laser, exceeds 3/4ths bar stripe pitch on quick shaft direction.The object designing like this: the first semiconductor laser is folded the light beam that in battle array 1, each semiconductor laser clings to after bar collimation can be through periodicity Space Coupling mirror 7, and light beams after folded battle array 2 each the bar bars collimation of the second semiconductor laser just incide on 45 ° of speculums corresponding on Space Coupling mirror 7 periodically, thus with the output that spatially superposes of the first directional light of the folded battle array 1 of the first semiconductor laser.
Claims (7)
1. a space stack high-power semiconductor laser is folded array 1 system, comprise the folded battle array of the first semiconductor laser (1), the folded battle array of the second semiconductor laser (2), described the first semiconductor laser folded gust (1) and the folded battle array of the second semiconductor laser (2) are formed by stacking along quick shaft direction by a plurality of semiconductor lasers bar bars, and these two the folded gust semiconductor laser comprising bar bar quantity is identical; It is characterized in that, also comprise the first fast axis collimation lens group (3), the second fast axis collimation lens group (4), the first slow axis collimating lens array group (5), the second slow axis collimating lens array group (6), periodicity Space Coupling mirror (7), slow axis beam-expanding system (8), focus lamp (9); Wherein:
Described the first fast axis collimation lens group (3) forms by clinging to semiconductor laser in the folded battle array of semiconductor laser a plurality of collimating lenses that bar number is identical with the second fast axis collimation lens group (4); In the first fast axis collimation lens group (3), the quantity of collimating lens is identical with the quantity of semiconductor laser bar bar in the folded battle array of the first semiconductor laser (1); In the second fast axis collimation lens group (4), the quantity of collimating lens is identical with the quantity of semiconductor laser bar bar in the folded battle array of the second semiconductor laser (2); The first slow axis collimating lens array group (5) and the second slow axis collimating lens array group (6) form by a plurality of collimating lens arrays; In the first slow axis collimating lens array group (5), the quantity of collimating lens array is identical with the quantity of semiconductor laser bar bar in the folded battle array of the first semiconductor laser (1); In the second slow axis collimating lens array group (6), the quantity of collimating lens array is identical with the quantity of semiconductor laser bar bar in the folded battle array of the second semiconductor laser (2);
Each collimating lens in described the first fast axis collimation lens group (3) is parallel and place with one heart with respect to semiconductor laser bar bar corresponding in the folded battle array of the first semiconductor laser (1), and the focal length that is this collimating lens of distance between the two; Semiconductor laser corresponding in the folded battle array of each collimating lens in the second fast axis collimation lens group (4) and the second semiconductor laser (2) clings to the parallel and concentric placement of bar, and the focal length that is fast axis collimation lens of distance between the two; Each collimating lens array of the first slow axis collimating lens array group (5) is parallel and placement with one heart with respect to bar bar corresponding in the folded battle array of the first semiconductor laser, and distance is between the two the focal length of this slow axis collimating lens array; Each collimating lens array of the second slow axis collimating lens array group (6) is parallel and placement with one heart with respect to bar bar corresponding in the folded battle array of the second semiconductor laser, and distance is between the two the focal length of this slow axis collimating lens array;
The light beam that the folded battle array of described the first semiconductor laser (1) is sent becomes the first directional light successively after the first fast axis collimation lens group (3), the first slow axis collimating lens array group (5) collimate on fast, slow-axis direction, and the light beam being sent by each semiconductor laser bar bar in the first directional light is of a size of 1/2nd bar stripe pitch; The light beam that the folded battle array of the second semiconductor laser (2) is sent becomes the second directional light through the second fast axis collimation lens group (4), the second slow axis collimating lens array group (6) successively after fast, slow-axis direction collimate, and the light beam being sent by each semiconductor laser bar bar in the second directional light is of a size of 1/2nd bar stripe pitch; Periodically the angle of Space Coupling mirror (7) place face and the first directional light, the second directional light is 45 °, the first directional light all sees through through periodicity Space Coupling mirror (7), the second directional light is to arrive periodically Space Coupling mirror perpendicular to the first parallel direction of light, after periodicity Space Coupling mirror (7) carries out 45 ° of reflections, superpose in the same way and mutually with the first directional light by periodicity Space Coupling mirror (7), stack light beam is adjusted slow axis through slow axis beam-expanding system (8) and is expanded multiple, output after focusing on finally by condenser lens (9).
2. stack high-power semiconductor laser in space as claimed in claim 1 is folded array 1 system, it is characterized in that, described periodicity Space Coupling mirror (7) is periodicity device, above in its one-period, 1/2 cycle was 45 ° of full impregnateds, below 45 ° high of 1/2 cycles anti-, an one periodic width equates with the spacing that semiconductor laser clings to bar.
3. stack high-power semiconductor laser in space as claimed in claim 2 is folded array 1 system, it is characterized in that, described periodicity Space Coupling mirror (7) is arranged and is fixed as one by 1/2nd bar stripe pitch by a plurality of 45 ° of speculums of 1/2nd bar stripe pitch width and forms, or adopts 45 ° of speculums of a monoblock to form by laser along continuous straight runs etching.
4. stack high-power semiconductor laser in space as claimed in claim 1 is folded array 1 system, it is characterized in that, also comprise the feedback light insulation blocking system being formed by polariscope (11), quarter-wave plate (12) and light stopper (13), described polariscope (11) and quarter-wave plate (12) are arranged between slow axis beam-expanding system (8) and condenser lens (9), polariscope (11) be arranged in parallel with periodicity Space Coupling mirror (7), and light stopper (13) is arranged on a side of polariscope (11); Light beam after slow axis beam-expanding system (8) first arrives polariscope (11), the light of the horizontal polarization of polariscope (11) is through quarter-wave plate (12) polarization direction rotation 45 degree, after returning, processing work surface reflection again by this quarter-wave plate (12) polarization direction, rotates again 45 degree, twice by this quarter-wave plate (12) polarization direction work 90-degree rotation, by horizontal polarization, become vertical polarization, again arrive after polariscope (11) by height instead to light stopper (13), light stopper (13) is derived above-mentioned light beam.
5. stack high-power semiconductor laser in space as claimed in claim 1 is folded array 1 system, it is characterized in that, in the folded battle array of the folded battle array of described the first semiconductor laser (1) and the second semiconductor laser (2), the beam sizes of each semiconductor laser bar bar after quick shaft direction collimation is 1/2nd bar stripe pitch, and the folded battle array of the second semiconductor laser (2) exceeds 1/2nd bar stripe pitch than the folded battle array of the first semiconductor laser (1) on quick shaft direction; Periodically Space Coupling mirror (7) exceeds 1/4th bar stripe pitch than the folded battle array of the second semiconductor laser (2) at quick shaft direction, than the folded battle array of the first semiconductor laser (1), exceeds 3/4ths bar stripe pitch on quick shaft direction.
6. the folded array 1 system of stack high-power semiconductor laser in space as claimed in claim 1, is characterized in that, described light stopper (13) adopts and is provided with 45 degree taper concave surface metal derbies, on its concave surface, scribbles black.
7. stack high-power semiconductor laser in space as claimed in claim 1 is folded array 1 system, it is characterized in that the folded battle array of 3000 watts that 25 semiconductor laser bar bars that it is 120W that the folded battle array of the folded battle array of described the first semiconductor laser (1) and the second conductor Laser (2) all adopts by 976nm, power are formed by stacking along quick shaft direction.
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