CN103579905B - Space overlapping coupling high-power semiconductor laser folds array 1 system - Google Patents
Space overlapping coupling high-power semiconductor laser folds array 1 system Download PDFInfo
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- CN103579905B CN103579905B CN201310562384.1A CN201310562384A CN103579905B CN 103579905 B CN103579905 B CN 103579905B CN 201310562384 A CN201310562384 A CN 201310562384A CN 103579905 B CN103579905 B CN 103579905B
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Abstract
The invention discloses a kind of space overlapping high-power semiconductor laser and fold array 1 system, comprise that the first semiconductor laser folds battle array, the second semiconductor laser folds battle array, first semiconductor laser is folded battle array and the second semiconductor laser and is folded battle array and be formed by stacking along quick shaft direction by multiple semiconductor laser bar bar, and the bar bar quantity that these two folded battle arrays comprise is identical; Also comprise the first fast axis collimation lens group, the second fast axis collimation lens group, the first slow axis collimating lens array group, the second slow axis collimating lens array group, periodic spatial coupling mirror, slow axis beam-expanding system, focus lamp; Two-way laser stacking array in this system is spatially by periodic spatial coupling mirror superposition output high-power laser; beam collimation adopts fast axis collimation lens and slow axis collimating lens array to realize; keep the characteristic of high brightness and linear polarization; meanwhile, feedback light shielding system protection internal components is added.Efficiently solve the complexity problem of existing semiconductor laser technique, the bar shaped uniform light spots of output high-power.
Description
Technical field
The invention belongs to laser technology field, be specifically related to a kind of space overlapping coupling high-power semiconductor laser and fold array 1 system.
Background technology
Laser due to brightness high, power density is high, heat effect region is little, materials processing is short for action time, process velocity is fast, noncontact is processed, without " cutter " wearing and tearing, acting on workpiece without " cutting force " can to various metals, nonmetal processing, particularly high rigidity, high fragility and materials with high melting point coordinate with digital control system and form laser machining centre, heat affected area is little, workpiece deformation is little, following process amount small-scale production efficiency is high, crudy is reliable and stable, solve the insurmountable difficult problem of many conventional methods, substantially increase operating efficiency and crudy, at present, the manufacturing industry of developed country steps into " light processing " epoch.In laser processing industry, semiconductor laser causes the extensive attention of people because volume is little, quality is light, efficiency is high, the life-span is long and cost performance is high.The raising greatly of the power efficiency of semiconductor laser industrial in recent years, makes it greatly to be paid close attention in the application in material processed field.
Because commercial Application laser output power improves constantly, and will obtain high laser output power, vertical folded battle array becomes current first-selected structure.The major technical challenge of vertical folded battle array encapsulation is beam quality, spectrum controls and the control problem of polarization characteristic, and vertical folded array semiconductor laser respectively clings to that the heat produced between bar is disturbed mutually, uneven water flow distribution causes uneven wave length shift and the spectrum widening that all will cause clinging to bar of chilling temperature that cling to bar.Beam Control comprises output facula size Control, optical intensity density equal control and beam Propagation direction controlling, therefore needs design and installation beam shaping and superposition coupled system, controls to ensure high-power output, beam quality and to point to.
At present, in order to obtain high laser output power, usually two semiconductor lasers being folded battle array and being stacked up by polarization coupled mirror.Fold in the structure of battle array by polariscope coupling superposition at existing semiconductor laser, usually two semiconductor lasers are folded battle array vertically to place, export light and be horizontal polarization, realize polariscope coupling superposition, wherein a road is provided with in the optical path and will puts into 1/2 wave plate for this road laser polarization direction 90-degree rotation is become vertical polarization, and two semiconductor lasers fold the light path of battle array interface on be provided with a polariscope for by two-way laser by polariscope coupling superposition.Mainly there are following three problems in this polariscopic use: 1) this polariscope in the optical path should by Brewster's angle 59.4 ° placement, but this angle is wayward in actual fabrication process, and micro-energy loss that partially can make of angle is excessive; 2) this polariscope also can make 45 degree of normal incidences, but under this angle, its rete design comparison is complicated, and technique is difficult to realize, normally result loss ratio is larger.3) light exported is not linearly polarized light, cannot carry out available protecting by adding feedback protection system to laser internal components.Meanwhile, fold at semiconductor laser 0 grade of 1/2 wave plate that gust light path is arranged and usually glue together installation, fragile when high power laser light passes through.
Summary of the invention
For the defect existed in above-mentioned prior art or deficiency; the object of the invention is to; a kind of space overlapping coupling high-power semiconductor laser is provided to fold array 1 system; two-way laser stacking array in this system is spatially by periodic spatial coupling mirror superposition output high-power laser; beam collimation adopts fast axis collimation lens and slow axis collimating lens array to realize; keep the characteristic of high brightness and linear polarization, meanwhile, add feedback light shielding system protection internal components.Efficiently solve the complexity problem of existing semiconductor laser technique, the bar shaped uniform light spots of output high-power.
To achieve these goals, the present invention adopts following technical scheme to be solved:
A kind of space overlapping high-power semiconductor laser folds array 1 system, comprise that the first semiconductor laser folds battle array, the second semiconductor laser folds battle array, described first semiconductor laser is folded battle array and the second semiconductor laser and is folded battle array and be formed by stacking along quick shaft direction by multiple semiconductor laser bar bar, and the semiconductor laser bar bar quantity that these two folded battle arrays comprise is identical; Also comprise the first fast axis collimation lens group, the second fast axis collimation lens group, the first slow axis collimating lens array group, the second slow axis collimating lens array group, periodic spatial coupling mirror, slow axis beam-expanding system, focus lamp; Wherein:
Described first fast axis collimation lens group and the second fast axis collimation lens group form by folding with semiconductor laser multiple collimating lenses that semiconductor laser in battle array clings to bar number identical; Quantity and first semiconductor laser of the first fast axis collimation lens group fold semiconductor laser in battle array, and to cling to the quantity of bar identical; In second fast axis collimation lens group, quantity and second semiconductor laser of collimating lens is folded semiconductor laser in battle array to cling to the quantity of bar identical; First slow axis collimating lens array group and the second slow axis collimating lens array group form by multiple collimating lens array; In first slow axis collimating lens array group, quantity and first semiconductor laser of collimating lens array is folded semiconductor laser in battle array to cling to the quantity of bar identical; In second slow axis collimating lens array group, quantity and second semiconductor laser of collimating lens array is folded semiconductor laser in battle array to cling to the quantity of bar identical;
It is parallel and place with one heart that each collimating lens in described first fast axis collimation lens group to fold in battle array corresponding semiconductor laser bar bar relative to the first semiconductor laser, and distance is between the two the focal length of this collimating lens; Each collimating lens in second fast axis collimation lens group and the second semiconductor laser are folded semiconductor laser corresponding in battle array to cling to bar parallel and to place with one heart, and distance is between the two the focal length of fast axis collimation lens; It is parallel and place with one heart that each collimating lens array of the first slow axis collimating lens array group folds bar bar corresponding in battle array relative to the first semiconductor laser, and distance is between the two the focal length of this slow axis collimating lens array; It is parallel and place with one heart that each collimating lens array of second slow axis collimating lens array group folds bar bar corresponding in battle array relative to the second semiconductor laser, and distance is between the two the focal length of this slow axis collimating lens array;
Described first semiconductor laser folds light beam that paroxysm goes out becomes the first directional light through the first fast axis collimation lens group, the first slow axis collimating lens array group after collimating on fast, slow-axis direction successively, clings to the light beam that bar sends be of a size of 1/2nd bar stripe pitch in the first directional light by each semiconductor laser; Second semiconductor laser folds the light beam that paroxysm goes out becomes the second directional light through the second fast axis collimation lens group, the second slow axis collimating lens array group successively after fast, slow-axis direction collimate, and clings to the light beam that bar sends be of a size of 1/2nd bar stripe pitch in the second directional light by each semiconductor laser; The angle of face, periodic spatial coupling mirror place and the first directional light, the second directional light is 45 °, first directional light through periodic spatial coupling mirror all through, second directional light arrives periodic spatial coupling mirror with the direction perpendicular to the first directional light, carry out after 45 ° of reflections through periodic spatial coupling mirror, with the first directional light by periodic spatial coupling mirror in the same way and mutually superpose, superposition light beam expands multiple through slow axis beam-expanding system adjustment slow axis, exports after focusing on finally by condenser lens.
The present invention also comprises following other technologies feature:
Described periodic spatial coupling mirror is periodically device, in its one-period 1/2 cycle was 45 ° of full impregnateds above, below 1/2 cycle 45 ° anti-high, an one periodic width is equal with the spacing that semiconductor laser clings to bar.
Described periodic spatial coupling mirror is arranged by multiple 45 ° of speculums of 1/2nd bar stripe pitch width by 1/2nd bar stripe pitch and is fixed as one and forms, or adopts a monoblock 45 ° of speculum laser to etch in the horizontal direction to form.
This system also comprises the feedback light insulation blocking system be made up of polariscope, quarter-wave plate and light stopper, described polariscope and quarter-wave plate are arranged between slow axis beam-expanding system and condenser lens, polariscope and periodic spatial coupling mirror be arranged in parallel, and light stopper is arranged on polariscopic side; Light beam after slow axis beam-expanding system first arrives polariscope, the light of polariscopic horizontal polarization rotates 45 degree through quarter-wave plate polarization direction, again 45 degree are rotated again by this quarter-wave plate polarization direction after processing work surface reflection is returned, pass twice through this quarter-wave plate polarization direction work 90-degree rotation, namely vertical polarization is become by horizontal polarization, again to arrive after polariscope by height instead to light stopper, above-mentioned light beam is derived by light stopper.
Described first semiconductor laser folds battle array 1 and the second semiconductor laser, and to fold the beam sizes of each semiconductor laser bar bar after quick shaft direction collimation in battle array be 1/2nd bar stripe pitch, and the second semiconductor laser is folded battle array and on quick shaft direction, compared the first semiconductor laser fold battle array 1 and exceed 1/2nd bar stripe pitch; Periodic spatial coupling mirror is folded battle array than the second semiconductor laser and is exceeded 1/4th bar stripe pitch at quick shaft direction, folds battle array on quick shaft direction, exceed 3/4ths bar stripe pitch than the first semiconductor laser.
Described light stopper adopts and is provided with 45 degree of taper concave metallic blocks, and its concave surface scribbles black.
Described first semiconductor laser is folded battle array and the second conductor Laser and is folded battle array 25 semiconductor lasers that all to adopt by 976nm, power be 120W and cling to the folded battle array of 3000 watts that bar is formed by stacking along quick shaft direction.
Compared with folding array 1 system with existing semiconductor laser, advantage of the present invention is as follows:
1, two semiconductor lasers are adopted to fold battle array as light source; after the axial standard successively of speed; superposed by periodic spatial coupling mirror coupled room; ensure that high power line polarization exports uniform light spots and exports, also make to add feedback light insulation blocking system and become feasible to avoid laser inside to suffer damage.
The system operational security that the setting of the feedback light insulation blocking system 2, be made up of polariscope, quarter-wave plate and light stopper makes is stablized, and can improve system useful life.
3, the setting of slow axis beam-expanding system can realize processing the evenly adjustable strip light spots needed.
4, can to realize laser power density on processing work adjustable in the setting of condenser lens.
5, simple and compact for structure, efficiency is high, and stable performance is easy to installment and debugging.
Accompanying drawing explanation
Fig. 1 is the structure principle chart that space overlapping of the present invention coupling high-power semiconductor laser folds array 1 system.
Fig. 2 is that in embodiment, the first semiconductor laser folds the structural representation that battle array or the second semiconductor laser fold battle array, and folded battle array comprises 25 semiconductor lasers bar bars.
Fig. 3 is the structural representation of periodic spatial coupling mirror in embodiment, comprises 25 cycles.
Fig. 4 is that in embodiment, the first semiconductor laser folds battle array, the second semiconductor laser folds battle array and the spatial distribution schematic diagram of periodic spatial coupling mirror on quick shaft direction.
The schematic diagram of the feedback light insulation blocking system that Fig. 5 is made up of polariscope, quarter-wave plate and light stopper.
Below in conjunction with the drawings and specific embodiments, further explanation is explained to the present invention.
Embodiment
As shown in Figure 1, space overlapping high-power semiconductor laser of the present invention folds array 1 system, comprises the first semiconductor laser and folds battle array 1, second semiconductor laser and fold battle array 2, first fast axis collimation lens group 3, second fast axis collimation lens group 4, first slow axis collimating lens array group 5, second slow axis collimating lens array group 6, periodic spatial coupling mirror 7, slow axis beam-expanding system 8, focus lamp 9, polariscope 11, quarter-wave plate 12 and light stopper 13.
As shown in Figure 2, the first semiconductor laser is folded battle array 1 and the second semiconductor laser and is folded battle array 2 and be formed by stacking along quick shaft direction by multiple semiconductor laser bar bar, and the semiconductor laser bar bar quantity that these two folded battle arrays comprise is identical; The wavelength of semiconductor laser bar bar and power export according to laser system and need to determine.
First fast axis collimation lens group 3 and the second fast axis collimation lens group 4 form by multiple collimating lens; Quantity and first semiconductor laser of the first fast axis collimation lens group 3 fold semiconductor laser in battle array 1, and to cling to the quantity of bar identical.In second fast axis collimation lens group 4, quantity and second semiconductor laser of collimating lens is folded semiconductor laser in battle array 2 to cling to the quantity of bar identical.First slow axis collimating lens array group 5 and the second slow axis collimating lens array group 6 form by multiple collimating lens array; In first slow axis collimating lens array group 5, quantity and first semiconductor laser of collimating lens array is folded semiconductor laser in battle array 1 to cling to the quantity of bar identical.In second slow axis collimating lens array group 6, quantity and second semiconductor laser of collimating lens array is folded semiconductor laser in battle array 2 to cling to the quantity of bar identical.Collimating lens is conventional optics, can select as required.
Wherein, it is parallel and place with one heart that each collimating lens in the first fast axis collimation lens group 3 to fold in battle array 1 corresponding semiconductor laser bar bar relative to the first semiconductor laser, and distance is between the two the focal length of this collimating lens; Each collimating lens in second fast axis collimation lens group 4 and the second semiconductor laser are folded semiconductor laser corresponding in battle array 2 to cling to bar parallel and to place with one heart, and distance is between the two the focal length of fast axis collimation lens.Thus the laser beam obtaining quick shaft direction homogenizing exports; It is parallel and place with one heart that each collimating lens array of the first slow axis collimating lens array group 5 folds bar bar corresponding in battle array relative to the first semiconductor laser, and distance is between the two the focal length of this slow axis collimating lens array; It is parallel and place with one heart that each collimating lens array of the second slow axis collimating lens array group 6 folds bar bar corresponding in battle array relative to the second semiconductor laser, and distance is between the two the focal length of this slow axis collimating lens array.
Periodic spatial coupling mirror 7 is critical component of the present invention, as shown in Figure 3, in the one-period of periodic spatial coupling mirror 7, above 1/2 cycle be 45 ° of full impregnateds, below 1/2 cycle 45 ° anti-high, one-period width with bar stripe pitch equal.During actual fabrication, multiple 45 ° of speculums of 1/2nd bar stripe pitch width can be adopted to arrange by 1/2nd bar stripe pitch and be fixed as one, a monoblock 45 ° of speculum laser also can be adopted to etch formation in the horizontal direction, the cycle is bar stripe pitch.
Slow axis beam-expanding system 8 is conventional optics, the Thorlabs of the current supplier such as U.S., the LIMO of Germany, and the Dayoptics etc. of China, can select as required.
Focus lamp 9, polariscope 11, quarter-wave plate 12 are conventional optics, and current supplier is as the Thorlabs of the U.S., and the LIMO of Germany, the Dayoptics etc. of China, can select as required.Polariscope 11 and periodic spatial coupling mirror 7 be arranged in parallel.
Light stopper 13 is arranged on the side of polariscope 11.
As Figure 1 and Figure 4, first semiconductor laser folds light beam that battle array 1 sends becomes the first directional light successively after the first fast axis collimation lens group 3, first slow axis collimating lens array group 5 collimates on fast, slow-axis direction, clings to the light beam that bar sends be of a size of 1/2nd bar stripe pitch in the first directional light by each semiconductor laser; Second semiconductor laser folds the light beam that battle array 2 sends becomes the second directional light through the second fast axis collimation lens group 4, second slow axis collimating lens array group 6 successively after fast, slow-axis direction collimate, and clings to the light beam that bar sends be of a size of 1/2nd bar stripe pitch in the second directional light by each semiconductor laser; First directional light through periodic spatial coupling mirror 7 all through, second directional light arrives periodic spatial coupling mirror with the direction perpendicular to the first directional light, carry out after 45 ° of reflections through periodic spatial coupling mirror 7, with the first directional light by periodic spatial coupling mirror 7 in the same way and mutually superpose, superposition light beam adjusts slow axis through slow axis beam-expanding system 8 and expands multiple; Then after polariscope 11, enter quarter-wave plate 12, focus on rear output finally by condenser lens 9.
The effect of each parts of system of the present invention is as follows:
First semiconductor laser is folded battle array 1 and the second semiconductor laser and is folded battle array 2 and spatially superpose as light source, ensures to obtain the high-output power meeting industrial processes needs.First fast axis collimation lens group 3 and the second fast axis collimation lens group 4 are folded to the first semiconductor laser the fast axial light Shu Jinhang that battle array 1 and the second semiconductor laser fold battle array 2 respectively and are collimated; First slow axis collimating lens array group 5 and the second slow axis collimating lens array group 6 are folded to the first semiconductor laser the slow axis beam that battle array 1 and the second semiconductor laser fold battle array 2 respectively and are collimated, and export to obtain laser beam that is fast, slow axis homogenizing.Periodic spatial coupling mirror 7 forms the first semiconductor laser and folds battle array 1 and the second semiconductor laser and fold battle array 2 and spatially superpose coupling and improve power output, and keeps the characteristic of high brightness and linear polarization.Slow axis beam-expanding system 8 can carry out focal length selection as required, and adjustment slow axis expands multiple to meet the adjustment to strip light spots length.Condenser lens 9 can carry out focal length as required and select with the requirement meeting processing work 10 pairs of laser power densities and sharp keen length.Polariscope 11, quarter-wave plate 12 and light stopper 13 form feedback light insulation blocking system (as shown in Figure 5), damage system for avoiding feedback light retrieval system.Its principle is: polariscope 11 is, orthogonal polarized light high anti-polarization coupled mirrors high thoroughly to horizontal polarization light.Light through the horizontal polarization of polariscope 11 rotates 45 degree through quarter-wave plate 12 polarization direction, again 45 degree are rotated again by this quarter-wave plate 12 polarization direction after processing work surface reflection is returned, pass twice through this quarter-wave plate 12 polarization direction work 90-degree rotation, vertical polarization is become by original horizontal polarization, again to arrive after polariscope 11 by height instead to light stopper 13, above-mentioned light beam is derived by light stopper 13, returns original optical path cause permanent damage to laser to avoid beam reflection.
The operation principle of system of the present invention:
As shown in Figure 1, shown in Figure 5, first fast axis collimation lens group 3 and the second fast axis collimation lens group 4 are folded battle array 1, second semiconductor laser to the first semiconductor laser respectively and are folded battle array 2 and carry out fast axle and slow-axis direction collimation, obtain laser beam that is fast, slow axis beam uniform quality.Semiconductor laser bar bar beam sizes after quick shaft direction collimation that each semiconductor laser is folded in battle array controls the half at bar stripe pitch, first semiconductor laser folds battle array 1, it is 1/2nd bar bars at the space length of quick shaft direction that second semiconductor laser folds semiconductor laser bar bar corresponding in battle array 2, first semiconductor laser is folded collimated light beam that battle array 1 all semiconductor laser bar bar exports through periodic spatial coupling mirror 7 all through, and the second semiconductor laser folds the collimated light beam of battle array 2 output through the whole 45 ° of reflections of periodic spatial coupling mirror 7, transmitted light (the first directional light) and reverberation (the second directional light) superpose through periodic spatial coupling mirror 7 rear space, realize high-power output, and ensure that output polarization of light characteristic, whole system is made easily to add feedback light insulation blocking system.The light beam exported from periodic spatial coupling mirror 7 passes through slow axis beam-expanding system 8, backward feedback light changes 90 ° through quarter-wave plate 12 rear polarizer direction twice and incides polariscope 11, light stopper 13 is reflexed to through polariscope 11, taper concave surface blacking on light stopper 13, returns to avoid feedback light and damages system; Focus on the surface of workpiece 10 after final beam line focus mirror 9 to its processing process, the back focal plane of condenser lens 9 overlaps with processing work 10 surface.
It is below the embodiment that inventor provides.
Embodiment:
Follow technical scheme of the present invention, the space overlapping coupling high-power semiconductor laser of the present embodiment folds array 1 system, comprises the first semiconductor laser and folds battle array 1, second semiconductor laser and fold battle array 2, first fast axis collimation lens group 3, second fast axis collimation lens group 4, first slow axis collimating lens array group 5, second slow axis collimating lens array group 6, periodic spatial coupling mirror 7, slow axis beam-expanding system 8, focus lamp 9, polariscope 11, quarter-wave plate 12 and light stopper 13.Wherein:
First semiconductor laser folds battle array 1, second conductor Laser, and to fold battle array 2 identical, and 25 semiconductor lasers that they all adopt by 976nm, power is 120W cling to the folded battle array of 3000 watts that bar is formed by stacking along quick shaft direction.It is 6000 watts that first semiconductor laser folds the gross power that battle array 1, second conductor Laser folds battle array 2.As shown in Figure 3, periodic spatial coupling mirror 7 adopts 45 ° of speculums of 25 wide 1/2nd bar stripe pitch spatially to arrange by 1/2nd bar stripe pitch to be formed by stacking.Light stopper 13 adopts and is provided with 45 degree of taper concave metallic blocks, and its concave surface scribbles black.
The light path of folding battle array 1 at the first semiconductor laser sets gradually the first fast axis collimation lens 3, first slow axis collimating lens array 5, periodic spatial coupling mirror 7, slow axis beam-expanding system 8, polariscope 11, quarter-wave plate 12 and focus lamp 9; Wherein, all cling to face, bar laser array 1 place with the first semiconductor parallel and to arrange with one heart for the first fast axis collimation lens 3, first slow axis collimating lens array 5, slow axis beam-expanding system 8, focus lamp 9 and quarter-wave plate 12; The light path of folding battle array 2 at the second semiconductor laser sets gradually the second fast axis collimation lens 4, second slow axis collimating lens array 6 and periodic spatial coupling mirror 7.
The light beam that first semiconductor laser folds battle array 1 output becomes the first directional light after fast axle and slow-axis direction collimation, second semiconductor laser fold battle array 2 export light beam fast axle and slow-axis direction collimation after become the second directional light, the second directional light and the first directional light perpendicular.The angle of face, periodic spatial coupling mirror 7 place and the first directional light, the second directional light is 45 °.First directional light all passes through from periodic spatial coupling mirror 7, and the second directional light arrives the reflecting surface of periodic spatial coupling mirror 7.
As shown in Figure 4, first semiconductor laser folds battle array 1 and the second semiconductor laser, and to fold the beam sizes of each semiconductor laser bar bar after quick shaft direction collimation in battle array 2 be 1/2nd bar stripe pitch, and the second semiconductor laser is folded battle array 2 and on quick shaft direction, compared the first semiconductor laser fold battle array 1 and exceed 1/2nd bar stripe pitch; Periodic spatial coupling mirror 7 to the second semiconductor laser is folded battle array 2 and is exceeded 1/4th bar stripe pitch at quick shaft direction, folds battle array 1 on quick shaft direction, exceed 3/4ths bar stripe pitch than the first semiconductor laser.The object of such design: the light beam that the first semiconductor laser is folded in battle array 1 after each semiconductor laser bar bar collimation can through periodic spatial coupling mirror 7, and the second semiconductor laser fold battle array 2 each bar bar collimation after light beam just incide on 45 ° of speculums corresponding on periodic spatial coupling mirror 7, thus spatially superpose output with the first directional light that the first semiconductor laser folds battle array 1.
Claims (7)
1. a space overlapping high-power semiconductor laser folds array 1 system, comprise that the first semiconductor laser folds battle array (1), the second semiconductor laser folds battle array (2), described first semiconductor laser is folded battle array (1) and the second semiconductor laser and is folded battle array (2) and be formed by stacking along quick shaft direction by multiple semiconductor laser bar bar, and described first semiconductor laser is folded battle array (1) and the second semiconductor laser and folded semiconductor laser that battle array (2) comprises to cling to bar quantity identical; It is characterized in that, also comprise the first fast axis collimation lens group (3), the second fast axis collimation lens group (4), the first slow axis collimating lens array group (5), the second slow axis collimating lens array group (6), periodic spatial coupling mirror (7), slow axis beam-expanding system (8), condenser lens (9); Wherein:
Described first fast axis collimation lens group (3) and the second fast axis collimation lens group (4) form by folding with semiconductor laser multiple collimating lenses that semiconductor laser in battle array clings to bar number identical; To fold the quantity that the middle semiconductor laser of battle array (1) clings to bar identical for quantity and first semiconductor laser of collimating lens in first fast axis collimation lens group (3); To fold the quantity that the middle semiconductor laser of battle array (2) clings to bar identical for quantity and second semiconductor laser of collimating lens in second fast axis collimation lens group (4); First slow axis collimating lens array group (5) and the second slow axis collimating lens array group (6) form by multiple collimating lens array; To fold the quantity that the middle semiconductor laser of battle array (1) clings to bar identical for quantity and first semiconductor laser of collimating lens array in first slow axis collimating lens array group (5); To fold the quantity that the middle semiconductor laser of battle array (2) clings to bar identical for quantity and second semiconductor laser of collimating lens array in second slow axis collimating lens array group (6);
It is parallel and place with one heart that each collimating lens in described first fast axis collimation lens group (3) folds semiconductor laser bar bar corresponding in battle array (1) relative to the first semiconductor laser, and distance is between the two the focal length of this collimating lens; Each collimating lens in second fast axis collimation lens group (4) and the second semiconductor laser are folded corresponding semiconductor laser in battle array (2) to cling to bar parallel and to place with one heart, and distance is between the two the focal length of fast axis collimation lens; It is parallel and place with one heart that each collimating lens array of the first slow axis collimating lens array group (5) folds bar bar corresponding in battle array relative to the first semiconductor laser, and distance is between the two the focal length of this slow axis collimating lens array; It is parallel and place with one heart that each collimating lens array of second slow axis collimating lens array group (6) folds bar bar corresponding in battle array relative to the second semiconductor laser, and distance is between the two the focal length of this slow axis collimating lens array;
Described first semiconductor laser folds light beam that battle array (1) sends becomes the first directional light through the first fast axis collimation lens group (3), the first slow axis collimating lens array group (5) after collimating on fast, slow-axis direction successively, clings to the light beam that bar sends be of a size of 1/2nd bar stripe pitch in the first directional light by each semiconductor laser; Second semiconductor laser folds the light beam that battle array (2) sends becomes the second directional light through the second fast axis collimation lens group (4), the second slow axis collimating lens array group (6) successively after fast, slow-axis direction collimate, and clings to the light beam that bar sends be of a size of 1/2nd bar stripe pitch in the second directional light by each semiconductor laser; The angle of periodic spatial coupling mirror (7) face, place and the first directional light, the second directional light is 45 °, first directional light through periodic spatial coupling mirror (7) all through, second directional light arrives periodic spatial coupling mirror with the direction perpendicular to the first directional light, carry out after 45 ° of reflections through periodic spatial coupling mirror (7), with by the first directional light of periodic spatial coupling mirror (7) in the same way and mutually superpose, superposition light beam expands multiple through slow axis beam-expanding system (8) adjustment slow axis, exports after focusing on finally by condenser lens (9).
2. space overlapping high-power semiconductor laser as claimed in claim 1 folds array 1 system, it is characterized in that, described periodic spatial coupling mirror (7) is periodicity device, above in its one-period, 1/2 cycle was 45 ° of full impregnateds, 1/2 cycle 45 ° is anti-high below, and an one periodic width is equal with the spacing that semiconductor laser clings to bar.
3. space overlapping high-power semiconductor laser as claimed in claim 2 folds array 1 system, it is characterized in that, described periodic spatial coupling mirror (7) is arranged by multiple 45 ° of speculums of 1/2nd bar stripe pitch width by 1/2nd bar stripe pitch and is fixed as one and forms, or adopts a monoblock 45 ° of speculum laser to etch in the horizontal direction to form.
4. space overlapping high-power semiconductor laser as claimed in claim 1 folds array 1 system, it is characterized in that, also comprise the feedback light insulation blocking system be made up of polariscope (11), quarter-wave plate (12) and light stopper (13), described polariscope (11) and quarter-wave plate (12) are arranged between slow axis beam-expanding system (8) and condenser lens (9), polariscope (11) and periodic spatial coupling mirror (7) be arranged in parallel, and light stopper (13) is arranged on the side of polariscope (11), light beam after slow axis beam-expanding system (8) first arrives polariscope (11), the light of the horizontal polarization of polariscope (11) rotates 45 degree through quarter-wave plate (12) polarization direction, again 45 degree are rotated again by this quarter-wave plate (12) polarization direction after processing work surface reflection is returned, pass twice through this quarter-wave plate (12) polarization direction corotation to turn 90 degrees, namely vertical polarization is become by horizontal polarization, again to arrive after polariscope (11) by height instead to light stopper (13), above-mentioned light beam is derived by light stopper (13).
5. space overlapping high-power semiconductor laser as claimed in claim 1 folds array 1 system, it is characterized in that, described first semiconductor laser folds battle array (1) and the second semiconductor laser, and to fold the beam sizes of each semiconductor laser bar bar after quick shaft direction collimation in battle array (2) be 1/2nd bar stripe pitch, and the second semiconductor laser is folded battle array (2) and on quick shaft direction, compared the first semiconductor laser fold battle array (1) and exceed 1/2nd bar stripe pitch; Periodic spatial coupling mirror (7) is folded battle array (2) at quick shaft direction than the second semiconductor laser and is exceeded 1/4th bar stripe pitch, folds battle array (1) on quick shaft direction, exceed 3/4ths bar stripe pitch than the first semiconductor laser.
6. space overlapping high-power semiconductor laser as claimed in claim 4 folds array 1 system, it is characterized in that, described light stopper (13) adopts and is provided with 45 degree of taper concave metallic blocks, and its concave surface scribbles black.
7. space overlapping high-power semiconductor laser as claimed in claim 1 folds array 1 system, it is characterized in that, described first semiconductor laser is folded battle array (1) and the second semiconductor laser and is folded battle array (2) 25 semiconductor lasers that all to adopt by 976nm, power be 120W and cling to the folded battle array of 3000 watts that bar is formed by stacking along quick shaft direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310562384.1A CN103579905B (en) | 2013-11-11 | 2013-11-11 | Space overlapping coupling high-power semiconductor laser folds array 1 system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310562384.1A CN103579905B (en) | 2013-11-11 | 2013-11-11 | Space overlapping coupling high-power semiconductor laser folds array 1 system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103579905A CN103579905A (en) | 2014-02-12 |
| CN103579905B true CN103579905B (en) | 2016-02-10 |
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| CN103944069A (en) * | 2014-05-09 | 2014-07-23 | 西安炬光科技有限公司 | High-power semiconductor laser beam combining device |
| CN103944059B (en) * | 2014-05-09 | 2017-02-15 | 西安炬光科技有限公司 | High-power semiconductor laser beam expanding system |
| CN105896311B (en) * | 2016-06-22 | 2018-09-11 | 长春德信光电技术有限公司 | A kind of white light laser closing beam technology based on semiconductor laser |
| CN107623251A (en) * | 2017-09-18 | 2018-01-23 | 张家港市顶峰激光科技有限公司 | Space overlapping high-power semiconductor laser for laser melting coating folds array 1 system |
| CN110142405B (en) * | 2019-03-29 | 2021-06-18 | 西北大学 | Two-dimensional area array laser 3D metal printer and file conversion and printing control method thereof |
| CN112445005B (en) * | 2019-08-29 | 2023-08-11 | 深圳市中光工业技术研究院 | Laser light source and laser light source system |
| CN111896937B (en) * | 2020-08-24 | 2024-03-26 | 西安炬光科技股份有限公司 | Optical module for light beam superposition and laser system |
| CN112162412B (en) * | 2020-08-27 | 2022-09-16 | 西安炬光科技股份有限公司 | Optical module and laser module |
| CN112864792A (en) * | 2021-01-08 | 2021-05-28 | 西安炬光科技股份有限公司 | Semiconductor laser module and optical system |
| CN114094444B (en) * | 2021-10-26 | 2024-04-19 | 中国电子科技集团公司第十一研究所 | Laser diode area array system for realizing uniform flat-top distribution |
| CN115967015A (en) * | 2023-01-06 | 2023-04-14 | 东莞方孺光电科技有限公司 | Dual-wavelength multi-single-beam semiconductor laser beam combining device based on wavelength beam combining technology |
| CN116093744A (en) * | 2023-01-06 | 2023-05-09 | 东莞方孺光电科技有限公司 | Dual-wavelength laser beam combining device based on wavelength beam combining and polarization beam combining |
| CN116191204A (en) * | 2023-02-15 | 2023-05-30 | 东莞方孺光电科技有限公司 | Semiconductor laser beam combining device based on prism compressed light beam |
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