CN116093744A - Dual-wavelength laser beam combining device based on wavelength beam combining and polarization beam combining - Google Patents
Dual-wavelength laser beam combining device based on wavelength beam combining and polarization beam combining Download PDFInfo
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- CN116093744A CN116093744A CN202310018642.3A CN202310018642A CN116093744A CN 116093744 A CN116093744 A CN 116093744A CN 202310018642 A CN202310018642 A CN 202310018642A CN 116093744 A CN116093744 A CN 116093744A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/1006—Beam splitting or combining systems for splitting or combining different wavelengths
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/283—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising used for beam splitting or combining
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0267—Integrated focusing lens
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention relates to the technical field of semiconductor laser, and discloses a dual-wavelength laser beam combining device based on wavelength beam combining and polarization beam combining, which comprises a water cooling plate; a first beam combining module; a second beam combining module; the first reflecting mirror is arranged between the first beam combining module and the second beam combining module; the first wavelength beam combining lens is arranged between the first beam combining module and the second beam combining module; a third beam combining module; a fourth beam combining module; the second reflecting mirror is arranged between the third beam combining module and the fourth beam combining module; the second wavelength beam combining lens is arranged between the third beam combining module and the fourth beam combining module; the half-wave plate is arranged on the water cooling plate; the polarization beam combining lens is arranged on the water cooling plate; the focusing lens is arranged on the water cooling plate. The laser beam combining device has the advantages that laser beams emitted by the beam combining modules are collimated, combined and focused to one point, a single laser device achieves blue light and infrared light dual-wavelength high power and light output, and is directly irradiated or coupled into optical fiber transmission, so that the device is compact in structure, easy to thermally manage, and applicable to the fields of laser processing and the like.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a dual-wavelength laser beam combining device based on wavelength beam combining and polarization beam combining.
Background
With the progress of technology in recent years, laser processing is increasingly widely applied, and the multi-wavelength composite processing technology is rapidly developed. In the process of welding metals such as copper and nickel, blue light or green light and infrared light are used for combined irradiation, the characteristic of high blue light and green light absorption efficiency of the metals such as copper and nickel can be utilized, the welding thickness is improved, and the method is applied to the fields of sealing welding of new energy batteries and the like.
The current common dual-wavelength compounding mode is to adopt two lasers with different wavelengths, compound the lasers with the two wavelengths on the same focus by utilizing a compound laser processing head to carry out irradiation processing on materials, and equipment manufactured by the technology is generally large in size.
With the progress of semiconductor laser technology, the semiconductor laser beam combining technology is mature, and the semiconductor laser is widely applied in the processing field.
Improvements in this regard are needed.
Disclosure of Invention
The invention aims at solving the technical problems in the prior art and provides a dual-wavelength laser beam combining device based on wavelength beam combining and polarization beam combining, which mainly aims at realizing dual-wavelength combination by collimating, beam combining and focusing laser emitted by a multi-combination beam module so as to solve the problems in the prior art.
In order to solve the technical problems, the invention adopts the following technical scheme: a dual wavelength laser beam combining device based on wavelength combining and polarization combining, comprising: a water cooling plate; the first beam combining module is arranged on the water cooling plate and is used for emitting first laser; the second beam combination module is arranged on one side of the first beam combination module and is used for emitting second laser; the first reflecting mirror is arranged between the first beam combination module and the second beam combination module and is used for reflecting first laser; the first wavelength beam combining lens is arranged between the first beam combining module and the second beam combining module and is used for reflecting the second laser and combining the first laser and the second laser; the third beam combination module is arranged on the water cooling plate and is used for emitting third laser; the fourth beam combination module is arranged on one side of the third beam combination module and is used for emitting fourth laser; the second reflecting mirror is arranged between the third beam combination module and the fourth beam combination module and is used for reflecting third laser; the second wavelength beam combining lens is arranged between the third beam combining module and the fourth beam combining module and is used for reflecting the fourth laser and combining the third laser and the fourth laser; the half-wave plate is arranged on the water-cooling plate and is arranged in the light emitting direction of the second wavelength beam combining lens; the polarization beam combining lens is arranged on the water cooling plate and is used for combining the first laser and the second laser after beam combination and the third laser and the fourth laser after beam combination; and the focusing lens is arranged on the water cooling plate and is arranged in the light emitting direction of the polarization beam combining lens.
Further, the first beam combining module comprises a first stepped heat sink installed on the water cooling plate, more than one first single-beam semiconductor laser installed on the first stepped heat sink, a first fast-axis collimating mirror matched with the number of the first single-beam semiconductor lasers, a first beam conversion mirror matched with the number of the first single-beam semiconductor lasers, a first slow-axis collimating mirror matched with the number of the first single-beam semiconductor lasers and a first reflecting mirror unit matched with the number of the first single-beam semiconductor lasers, wherein the first fast-axis collimating mirror is installed at a light outlet of the first single-beam semiconductor lasers, the first beam conversion mirror is arranged at the front side of the first fast-axis collimating mirror, the first slow-axis collimating mirror is arranged at the front side of the first beam conversion mirror, and the first reflecting mirror unit is arranged at the front side of the first slow-axis collimating mirror, and the first stepped heat sink is provided with the number of the first single-beam semiconductor lasers.
Further, the second beam combining module includes a second stepped heat sink installed on the water cooling plate, more than one second Shan Ba semiconductor laser installed on the second stepped heat sink, a second fast axis collimating mirror adapted to the number of the second Shan Ba semiconductor lasers, a second slow axis collimating mirror adapted to the number of the second Shan Ba semiconductor lasers, a second reflecting mirror unit adapted to the number of the second Shan Ba semiconductor lasers, and a second reflecting mirror adapted to the number of the second Shan Ba semiconductor lasers, wherein the second fast axis collimating mirror is installed at a light outlet of the second Shan Ba semiconductor lasers, the second slow axis collimating mirror is disposed at a front side of the second fast axis collimating mirror, the second slow axis collimating mirror is disposed at a front side of the second slow axis collimating mirror, and the second stepped heat sink is provided with a semiconductor laser adapted to the number of the second steps Shan Ba.
Further, the third beam combining module comprises a third stepped heat sink installed on the water cooling plate, more than one third single-bar semiconductor laser installed on the third stepped heat sink, a third fast-axis collimating mirror matched with the number of the third single-bar semiconductor lasers, a third slow-axis collimating mirror matched with the number of the third single-bar semiconductor lasers, and a third reflector unit matched with the number of the third single-bar semiconductor lasers, wherein the third fast-axis collimating mirror is installed at a light outlet of the third single-bar semiconductor lasers, the third slow-axis collimating mirror is arranged at the front side of the third fast-axis collimating mirror, the third reflector unit is arranged at the front side of the third slow-axis collimating mirror, and the third stepped heat sink is provided with the number of the third single-bar semiconductor lasers.
Further, the fourth beam combining module comprises a fourth stepped heat sink installed on the water cooling plate, more than one fourth single-beam semiconductor laser installed on the fourth stepped heat sink, a fourth fast-axis collimating mirror matched with the number of the fourth single-beam semiconductor lasers, a fourth slow-axis collimating mirror matched with the number of the fourth single-beam semiconductor lasers, and a fourth reflecting mirror unit matched with the number of the fourth single-beam semiconductor lasers, wherein the fourth fast-axis collimating mirror is installed at a light outlet of the fourth single-beam semiconductor lasers, the fourth slow-axis collimating mirror is arranged at the front side of the fourth fast-axis collimating mirror, the fourth reflecting mirror unit is arranged at the front side of the fourth slow-axis collimating mirror, and the fourth stepped heat sink is provided with the number of the fourth single-beam semiconductor lasers.
Further, a first antireflection film is plated on the first fast axis collimating mirror, the first beam converting mirror and the first slow axis collimating mirror, a first reflecting mirror unit reflecting film is plated on the first reflecting mirror unit, and the first reflecting mirror unit reflecting film is used for reflecting first laser to the first reflecting mirror; the second fast axis collimating mirror, the second beam converting mirror and the second slow axis collimating mirror are coated with a second antireflection film, the second reflecting mirror unit is coated with a second reflecting mirror unit reflecting film, and the second reflecting mirror unit reflecting film is used for reflecting second laser to the first wavelength beam combining mirror; the third fast axis collimating mirror, the third light beam converting mirror and the third slow axis collimating mirror are coated with a third antireflection film, the third reflecting mirror unit is coated with a third reflecting mirror unit reflecting film, and the third reflecting mirror unit reflecting film is used for reflecting the first laser to the second reflecting mirror; the fourth fast axis collimating mirror, the fourth light beam converting mirror and the fourth slow axis collimating mirror are coated with a fourth antireflection film, the fourth reflecting mirror unit is coated with a fourth reflecting mirror unit reflecting film, and the fourth reflecting mirror unit reflecting film is used for reflecting fourth laser to the second wavelength beam combining mirror.
Further, a first reflecting film is plated on the first reflecting mirror, and the first reflecting film is used for reflecting the first laser to the first wavelength beam combining mirror; the second reflecting film is plated on the second reflecting mirror and is used for reflecting the third laser to the second wavelength beam combining mirror.
Further, a third reflection film for second laser and a fifth reflection reducing film for first laser are plated on the first wavelength beam combining lens, and a fourth reflection film for fourth laser and a sixth reflection reducing film for third laser are plated on the second wavelength beam combining lens.
Further, the half-wave plate is plated with a seventh antireflection film for the third laser light and the fourth laser light; the polarization beam combining lens is plated with eighth antireflection films for the first laser, the second laser, the third laser and the fourth laser; the focusing mirror is plated with a ninth antireflection film for the first laser, the second laser, the third laser and the fourth laser.
Further, the first laser and the third laser have a wavelength of 915nm, and the second laser and the fourth laser have a wavelength of 450nm.
Compared with the prior art, the invention has the beneficial effects that: the first laser, the second laser, the third laser and the fourth laser emitted by the beam combination modules are combined and focused, dual-wavelength high power and light output can be realized on a single laser, and the dual-wavelength high power and light output can be directly irradiated or coupled into optical fiber transmission.
Drawings
Fig. 1 is a schematic structural view of the present invention.
Fig. 2 is a schematic structural view of the first beam combining module and the second beam combining module.
Fig. 3 is a schematic partial structure of the first beam combining module.
Fig. 4 is a schematic partial structure of the second beam combining module.
Fig. 5 is a schematic structural view of the third beam combining module and the fourth beam combining module.
Fig. 6 is a schematic partial structure of a third beam combining module.
Fig. 7 is a schematic partial structure of a fourth beam combining module.
Fig. 8 is a schematic diagram of the principle of the wavelength beam combiner.
Fig. 9 is a schematic diagram of a half-wave plate principle.
Fig. 10 is a schematic diagram of the principle of the polarization beam combiner.
Fig. 11 is a schematic view of the optical path of the present invention.
Reference numerals: 1. a water cooling plate; 2. a first beam combining module; 3. a second beam combining module; 4. a first mirror; 5. a first wavelength beam combining mirror; 6. a third beam combining module; 7. a fourth beam combining module; 8. a second mirror; 9. a second wavelength beam combining mirror; 10. a half-wave plate; 11. a polarization beam combiner; 12. a focusing mirror; 13. a first stepped heat sink; 14. a first single-bar semiconductor laser; 15. a first fast axis collimator; 16. a first beam conversion mirror; 17. a first slow axis collimator; 18. a first mirror unit; 19. a second stepped heat sink; 20. a second Shan Ba semiconductor laser; 21. a second fast axis collimator; 22. a second beam conversion mirror; 23. a second slow axis collimator; 24. a second mirror unit; 25. a third stepped heat sink; 26. a third single-bar semiconductor laser; 27. a third fast axis collimator; 28. a third beam conversion mirror; 29. a third slow axis collimator; 30. a third mirror unit; 31. a fourth stepped heat sink; 32. a fourth single-bar semiconductor laser; 33. a fourth fast axis collimator; 34. a fourth beam conversion mirror; 35. a fourth slow axis collimator; 36. and a fourth mirror unit.
Detailed Description
The invention is described in further detail below with reference to the accompanying drawings.
The embodiments described by referring to the drawings are exemplary and intended for purposes of illustrating the present application and are not to be construed as limiting the present application. In the description of the present application, it should be understood that the terms "center," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," etc. indicate or are based on the orientation or positional relationship shown in the drawings, merely for convenience of description and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "a number", "a plurality" or "a plurality" is two or more, unless explicitly defined otherwise. In the present application, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be. In this application, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, and may also include the first and second features not being in direct contact but being in contact with each other by way of additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is less level than the second feature.
In view of the technical problems described in the background art, as shown in fig. 1-11, a dual wavelength laser beam combining device based on wavelength beam combining and polarization beam combining is provided, including: a water cooling plate 1; a first beam combining module 2, wherein the first beam combining module 2 is installed on the water cooling plate 1, and the first beam combining module 2 is used for emitting first laser; a second beam combination module 3, wherein the second beam combination module 3 is arranged at one side of the first beam combination module 2, and the second beam combination module 3 is used for emitting second laser; a first reflecting mirror 4, wherein the first reflecting mirror 4 is arranged between the first beam combination module 2 and the second beam combination module 3, and the first reflecting mirror 4 is used for reflecting first laser light; the first wavelength beam combining lens 5 is arranged between the first beam combining module 2 and the second beam combining module 3, and the first wavelength beam combining lens 5 is used for reflecting the second laser and combining the first laser and the second laser; a third beam combining module 6, wherein the third beam combining module 6 is installed on the water cooling plate 1, and the third beam combining module 6 is used for emitting third laser; a fourth beam combination module 7, wherein the fourth beam combination module 7 is installed at one side of the third beam combination module 6, and the fourth beam combination module 7 is used for emitting fourth laser; a second reflecting mirror 8, the second reflecting mirror 8 is disposed between the third beam combining module 6 and the fourth beam combining module 7, and the second reflecting mirror 8 is used for reflecting the third laser light; a second wavelength beam combining lens 9, where the second wavelength beam combining lens 9 is disposed between the third beam combining module 6 and the fourth beam combining module 7, and the second wavelength beam combining lens 9 is used to reflect the fourth laser and combine the third laser and the fourth laser; a half-wave plate 10, wherein the half-wave plate 10 is mounted on the water-cooling plate 1, and the half-wave plate 10 is arranged in the light emitting direction of the second wavelength beam combining mirror 9; the polarization beam combining lens 11 is arranged on the water cooling plate 1, and the polarization beam combining lens 11 is used for combining the first laser and the second laser after beam combination and the third laser and the fourth laser after beam combination; and a focusing lens 12, wherein the focusing lens 12 is installed on the water cooling plate 1, and the focusing lens 12 is arranged in the light emitting direction of the polarization beam combining lens 11.
The water cooling plate 1 is used in connection with a water cooling system for thermally managing the first beam combination module 2, the second beam combination module 3, the third beam combination module 6 and the fourth beam combination module 7. The first reflecting mirror 4 can be fixed on the first beam combining module 2 and the second beam combining module 3 through ultraviolet curing glue, and forms 45 degrees with the beam after the beam is combined by the first beam combining module 2, and the beam after the beam is combined by the first beam combining module 2 passes through the first reflecting mirror 4 and is turned by 90 degrees. The first wavelength beam combining lens 5 is fixed on the first beam combining module 2 and the second beam combining module 3 through ultraviolet curing glue, the beam after being combined with the second beam combining module 3 and the beam after being reflected by the first reflecting mirror 4 form 45 degrees, the first laser after being reflected by the first reflecting mirror 4 passes through the first wavelength beam combining lens 5, the second laser after being combined by the second beam combining module 3 passes through the first wavelength beam combining lens 5 and then is reflected by 90 degrees, and the first laser and the second laser beam after being combined by the first wavelength beam combining lens 5 form one beam and are transmitted towards one direction. The second reflecting mirror 8 can be fixed on the third beam combining module 6 and the fourth beam combining module 7 through ultraviolet curing glue, and forms 45 degrees with the beam after being combined by the third beam combining module 6, and the beam after being combined by the third beam combining module 6 passes through the second reflecting mirror 8 and is turned by 90 degrees. The second wavelength beam combining lens 9 is fixed on the third beam combining module 6 and the fourth beam combining module 7 through ultraviolet curing glue, the beam after being combined with the fourth beam combining module 8 and the beam after being reflected by the second reflecting mirror 8 form 45 degrees, the third laser after being reflected by the second reflecting mirror 8 passes through the second wavelength beam combining lens 9, the fourth laser after being combined by the fourth beam combining module 4 passes through the second wavelength beam combining lens 9 and then is reflected by 90 degrees, and the third laser and the fourth laser beam after being combined by the second wavelength beam combining lens 9 are combined into one beam to be transmitted towards one direction. The half wave plate 10 is fixed on the water cooling plate 1 through ultraviolet curing glue and is positioned on the light-emitting path of the second wavelength beam combining lens 9, and the polarization direction of the laser beams which are combined by the third beam combining module 6 and the fourth beam combining module 7 through the second wavelength beam combining lens 9 passes through the half wave plate 10 and is rotated by 90 degrees. The polarization beam combining lens 11 is fixed on the water cooling plate 1 through ultraviolet curing glue and is positioned at the position where the light-emitting light paths of the first wavelength beam combining lens 5 and the second wavelength beam combining lens 9 are orthogonal, and the laser beams of the first beam combining module 2 and the second beam combining module 3 are combined through the first wavelength beam combining lens 5 and then pass through the polarization beam combining lens 11; the third beam combining module 6 and the fourth beam combining module 7 combine the laser beams through the second wavelength beam combining lens 9, and then the laser beams are reflected by 90 degrees through the polarization beam combining lens 11, and the two beams are combined into one beam for transmission. The focusing lens 12 is fixed on the water cooling plate 1 by ultraviolet curing glue or screws. The focusing lens 12 is arranged on the light-emitting path of the polarized beam combining lens 11 after beam combining, and the focusing lens 12 can be a single focusing lens or a plurality of lenses to form a focusing lens group.
In the practical process, the first laser is generated by the first beam combining module 2, the first laser wavelength can be 915nm, the second beam combining module 3 generates the second laser wavelength, the second laser wavelength can be 450nm, the generated first laser wavelength is reflected to the first wavelength beam combining lens 5 through the first reflecting mirror 4, and the second laser wavelength is emitted to the first wavelength beam combining lens 5, so that beam combining of the first laser wavelength and the second laser wavelength is completed. The third laser beam is generated by the third beam combining module 6, the third laser wavelength can be 915nm, the fourth beam combining module 7 generates the fourth laser wavelength, the fourth laser wavelength can be 450nm, the generated fourth laser wavelength is reflected to the second wavelength beam combining lens 9 through the second reflecting mirror 8, and the second laser wavelength is transmitted to the second wavelength beam combining lens 9, so that the beam combining of the third laser wavelength and the fourth laser wavelength is completed. The polarization direction of the combined third laser and fourth laser is rotated by 90 degrees through the half-wave plate 10, and then the combined third laser and fourth laser and the combined first laser and second laser are transmitted to the polarization beam combining lens 11, the combined first laser and second laser transmit through the polarization beam combining lens 11, and the combined third laser and fourth laser transmit through the polarization beam combining lens 11 and then are reflected by 90 degrees, so that the combined first laser and second laser and the combined third laser and fourth laser are combined.
Through the design structure, the first laser, the second laser, the third laser and the fourth laser emitted by the four beam combining modules are combined and focused, the dual-wavelength high-power and optical output can be realized on a single laser, the dual-wavelength high-power and optical output can be directly irradiated or coupled into optical fiber transmission, the whole structure is compact, the thermal management is easy, and the dual-wavelength high-power and optical output laser can be used in the fields of laser processing and the like.
As shown in fig. 2-3, the first beam combining module 2 includes a first stepped heat sink 13 mounted on the water cooling plate 1, more than one first single-bar semiconductor laser 14 mounted on the first stepped heat sink 13, a first fast-axis collimating mirror 15 adapted to the number of the first single-bar semiconductor lasers 14, a first beam converting mirror 16 adapted to the number of the first single-bar semiconductor lasers 14, a first slow-axis collimating mirror 17 adapted to the number of the first single-bar semiconductor lasers 14, and a first reflecting mirror unit 18 adapted to the number of the first single-bar semiconductor lasers 14, the first fast-axis collimating mirror 15 is mounted at a light outlet of the first single-bar semiconductor lasers 14, the first beam converting mirror 16 is disposed at a front side of the first fast-axis collimating mirror 15, the first slow-axis collimating mirror 17 is disposed at a front side of the first beam converting mirror 16, the first reflecting mirror unit 18 is disposed at a front side of the first stepped collimating mirror 17, and the first single-bar semiconductor lasers 14 are disposed at a front side of the first stepped collimating mirror 13.
The first beam combining module 2 structure provided in the foregoing may be implemented, where the first stepped heat sink 13 mainly functions as a heat sink, in a practical use scenario, the first single-beam semiconductor laser 14, the first fast-axis collimator lens 15, the first beam converting lens 16, the first slow-axis collimator lens 17 and the first reflecting mirror unit 18 thereof form a group, in use, a required number may be selected, in this embodiment, three groups are adopted, and each group is linearly arranged, for the first fast-axis collimator lens 15, the first single-beam semiconductor laser 14 may be fixed in front of the first single-beam semiconductor laser 16 by ultraviolet curing glue, the first slow-axis collimator lens 17 may be fixed in front of the first beam converting lens 16 by ultraviolet curing glue, and the first reflecting mirror unit 18 may be fixed in front of the first slow-axis collimator lens 17 by ultraviolet curing glue. The luminous point of the first single-beam semiconductor laser 14, the first fast axis collimating mirror 15, the first beam converting mirror 16, the first slow axis collimating mirror 17 and the first reflecting mirror unit 18 are coaxial, namely an optical axis, wherein the first reflecting mirror 4 forms 45 degrees with the optical axis, light emitted by the first single-beam semiconductor laser 14 passes through the first fast axis collimating mirror 15, the first beam converting mirror 16 and the first slow axis collimating mirror 17 to obtain collimated light beams, the collimated light beams pass through the first reflecting mirror unit 18 to turn in the transmission direction of 90 degrees, and n groups of light beams pass through the first reflecting mirror unit 18 to turn in the 90 degrees and then are transmitted in one direction. The first ladder heat sink 13 is of a ladder structure and is composed of n steps, and n groups of the first single-bar semiconductor laser 14, the first fast axis collimating mirror 15, the first beam converting mirror 16, the first slow axis collimating mirror 17 and the first reflecting mirror unit 18 are installed on each step of the first ladder heat sink 13.
In use, the first single-bar semiconductor laser 14 emits light in a vertical direction that is in the fast axis direction and in a horizontal direction that is in the slow axis direction. The beam is collimated in the fast axis direction after passing through the first fast axis collimating mirror 15; then through the first beam conversion mirror 16, the light spot rotates 90 degrees along the optical axis direction, namely the fast axis direction becomes the horizontal direction, and the slow axis direction becomes the vertical direction; after further passing through the first slow axis collimator lens 17, the slow axis direction is collimated.
After passing through the first fast axis collimating mirror 15, the first beam converting mirror 16 and the first slow axis collimating mirror 17, the light beams are collimated in both the fast axis and the slow axis, and the quality of the light beams in both axes is homogenized.
And further passes through the first reflecting mirror 4 to turn in the propagation direction by 90 degrees. Due to the arrangement of the ladder structure, the vertical dimension of each group of light beams is smaller than 2mm, and the 3 groups of light beams are turned by 90 degrees and then are transmitted towards one direction without being blocked by the first reflecting mirror 4.
As shown in fig. 2 and fig. 4, the second beam combining module 3 includes a second stepped heat sink 19 mounted on the water cooling plate 1, at least one second Shan Ba semiconductor laser 20 mounted on the second stepped heat sink 19, a second fast axis collimator mirror 21 adapted to the number of the second Shan Ba semiconductor lasers 20, a second slow axis collimator mirror 23 adapted to the number of the second Shan Ba semiconductor lasers 20, and a second mirror unit 24 adapted to the number of the second Shan Ba semiconductor lasers 20, the second fast axis collimator mirror 21 is mounted at a light outlet of the second Shan Ba semiconductor lasers 20, the second fast axis collimator mirror 22 is disposed at a front side of the second fast axis collimator mirror 21, the second slow axis collimator mirror 23 is disposed at a front side of the second Shan Ba semiconductor lasers 20, the second mirror unit 24 is disposed at a front side of the second slow axis collimator mirror 23, and the second stepped collimator mirror 20 is disposed at a front side of the second stepped collimator mirror 19, wherein the second stepped collimator 20 is disposed at a front side of the second stepped collimator mirror 20.
The structural arrangement and principle of the second beam combining module 3 may refer to the above first beam combining module 2, and will not be described herein. The second beam combination module 3 is installed in the same way as the first beam combination module 2, the direction of the second stepped heat sink 19 is opposite to the first stepped heat sink 13 of the first beam combination module 2, and the transmission direction of the second laser after beam combination is opposite to the first laser direction of the first beam combination module 2. The first stepped heat sink 13 of the first beam combining module 2 is tightly attached to the lowest step of the second stepped heat sink 19 of the second beam combining module 3, and is staggered by a distance along the laser light emitting direction. As shown in fig. 2, in the case that the light emitting directions of the single-beam semiconductor lasers of the first beam combining module 2 and the second beam combining module 3 are the same, the second beam combining module 3 is staggered a distance from the first beam combining module 2 along the light emitting direction.
The first reflecting mirror 4 is fixed on the lowest steps of the first step heat sink 13 and the second step heat sink 19 through ultraviolet curing glue.
As shown in fig. 5-6, the third beam combining module 6 includes a third stepped heat sink 25 mounted on the water cooling plate 1, more than one third single-bar semiconductor laser 26 mounted on the third stepped heat sink 25, a third fast axis collimating mirror 27 adapted to the number of the third single-bar semiconductor lasers 26, a third beam converting mirror 28 adapted to the number of the third single-bar semiconductor lasers 26, a third slow axis collimating mirror 29 adapted to the number of the third single-bar semiconductor lasers 26, and a third reflecting mirror unit 30 adapted to the number of the third single-bar semiconductor lasers 26, the third fast axis collimating mirror 27 is mounted at the light outlet of the third single-bar semiconductor lasers 26, the third beam converting mirror 28 is disposed at the front side of the third fast axis collimating mirror 27, the third slow axis collimating mirror 29 is disposed at the front side of the third beam converting mirror 28, the third reflecting mirror unit 30 is disposed at the front side of the third single-bar semiconductor lasers 26, and the third single-bar semiconductor lasers 26 are disposed at the front side of the third stepped collimating mirror 26.
As shown in fig. 5 and 7, the fourth beam combining module 7 includes a fourth stepped heat sink 31 mounted on the water cooling plate 1, at least one fourth single-bar semiconductor laser 32 mounted on the fourth stepped heat sink 31, a fourth fast-axis collimator lens 33 adapted to the number of the fourth single-bar semiconductor lasers 32, a fourth beam conversion lens 34 adapted to the number of the fourth single-bar semiconductor lasers 32, a fourth slow-axis collimator lens 35 adapted to the number of the fourth single-bar semiconductor lasers 32, and a fourth reflector unit 36 adapted to the number of the fourth single-bar semiconductor lasers 32, the fourth fast-axis collimator lens 33 is mounted at a light outlet of the fourth single-bar semiconductor lasers 32, the fourth beam conversion lens 34 is disposed at a front side of the fourth fast-axis collimator lens 33, the fourth slow-axis collimator lens 35 is disposed at a front side of the fourth beam conversion lens 34, the fourth reflector unit 36 is disposed at a front side of the fourth fast-axis collimator lens 33, and the number of the fourth single-bar semiconductor lasers 32 is adapted to the fourth stepped heat sink 32.
The above structural arrangement and working principles of the third beam combining module 6 and the fourth beam combining module 7 can refer to the first beam combining module 2 and the second beam combining module 3, and will not be described herein.
Specifically, the first fast axis collimator lens 15, the first beam converting lens 16, and the first slow axis collimator lens 17 are coated with a first antireflection film, the first mirror unit 18 is coated with a first mirror unit reflection film, and the first mirror unit reflection film is used for reflecting the first laser light to the first mirror; a second antireflection film is plated on the second fast axis collimating mirror 21, the second beam converting mirror 22 and the second slow axis collimating mirror 23, a second reflecting mirror unit reflecting film is plated on the second reflecting mirror unit 24, and the second reflecting mirror unit reflecting film is used for reflecting the second laser to the first wavelength beam combining mirror 5; the third fast axis collimating mirror 27, the third beam converting mirror 28 and the third slow axis collimating mirror 29 are coated with a third antireflection film, the third reflecting mirror unit 30 is coated with a third reflecting mirror unit reflecting film, and the third reflecting mirror unit reflecting film is used for reflecting the first laser light to the second reflecting mirror; the fourth fast axis collimator 33, the fourth beam converting mirror 34, and the fourth slow axis collimator 35 are coated with a fourth antireflection film, the fourth reflecting mirror unit 36 is coated with a fourth reflecting mirror unit reflecting film, and the fourth reflecting mirror unit reflecting film is used for reflecting the fourth laser light to the second wavelength beam combining mirror 9.
The first reflecting mirror 4 is plated with a first reflecting film, and the first reflecting film is used for reflecting the first laser to the first wavelength beam combining mirror 5; the second reflecting mirror 8 is coated with a second reflecting film, and the second reflecting film is used for reflecting the third laser to the second wavelength beam combining mirror.
The first wavelength beam combining mirror 5 is plated with a third reflection film for the second laser and a fifth reflection reducing film for the first laser, and the second wavelength beam combining mirror 9 is plated with a fourth reflection film for the fourth laser and a sixth reflection reducing film for the third laser.
The first wavelength beam combining lens 5 and the second wavelength beam combining lens 9 are dichroic mirrors, and the first wavelength beam combining lens 5 coats 45-degree fifth antireflection film on the light emitted by the first beam combining module 2 and coats 45-degree third reflection film on the light emitted by the second beam combining module 3. The second wavelength beam combining lens 9 is used for plating a 45-degree sixth antireflection film on the light emitted by the third beam combining module 6 and plating a 45-degree fourth reflection film on the light emitted by the fourth beam combining module 7.
Further, the half-wave plate 10 is plated with a seventh antireflection film for the third laser light and the fourth laser light; the polarization beam combining lens 11 is plated with eighth antireflection films for the first laser, the second laser, the third laser and the fourth laser; the focusing mirror plate 12 has a ninth antireflection film for the first laser light, the second laser light, the third laser light, and the fourth laser light.
The above antireflection film and the reflection film are not drawn in the drawings.
The above description should not be taken as limiting the scope of the invention, and any modifications, equivalent changes and modifications made to the above embodiments according to the technical principles of the present invention still fall within the scope of the technical solutions of the present invention.
Claims (10)
1. A dual wavelength laser beam combining device based on wavelength beam combining and polarization beam combining, comprising:
a water cooling plate;
the first beam combining module is arranged on the water cooling plate and is used for emitting first laser;
the second beam combination module is arranged on one side of the first beam combination module and is used for emitting second laser;
the first reflecting mirror is arranged between the first beam combination module and the second beam combination module and is used for reflecting first laser;
the first wavelength beam combining lens is arranged between the first beam combining module and the second beam combining module and is used for reflecting the second laser and combining the first laser and the second laser;
the third beam combination module is arranged on the water cooling plate and is used for emitting third laser;
the fourth beam combination module is arranged on one side of the third beam combination module and is used for emitting fourth laser;
the second reflecting mirror is arranged between the third beam combination module and the fourth beam combination module and is used for reflecting third laser;
the second wavelength beam combining lens is arranged between the third beam combining module and the fourth beam combining module and is used for reflecting the fourth laser and combining the third laser and the fourth laser;
the half-wave plate is arranged on the water-cooling plate and is arranged in the light emitting direction of the second wavelength beam combining lens;
the polarization beam combining lens is arranged on the water cooling plate and is used for combining the first laser and the second laser after beam combination and the third laser and the fourth laser after beam combination;
and the focusing lens is arranged on the water cooling plate and is arranged in the light emitting direction of the polarization beam combining lens.
2. The dual wavelength laser beam combining device based on wavelength beam combining and polarization beam combining according to claim 1, wherein: the first beam combining module comprises a first stepped heat sink arranged on the water cooling plate, more than one first single-beam semiconductor laser arranged on the first stepped heat sink, a first fast-axis collimating mirror matched with the number of the first single-beam semiconductor lasers, a first beam converting mirror matched with the number of the first single-beam semiconductor lasers, a first slow-axis collimating mirror matched with the number of the first single-beam semiconductor lasers and a first reflecting mirror unit matched with the number of the first single-beam semiconductor lasers, wherein the first fast-axis collimating mirror is arranged at a light outlet of the first single-beam semiconductor lasers, the first beam converting mirror is arranged at the front side of the first fast-axis collimating mirror, the first slow-axis collimating mirror is arranged at the front side of the first beam converting mirror, and the first reflecting mirror unit is arranged at the front side of the first slow-axis collimating mirror, and the first stepped is provided with a heat sink matched with the number of the first single-beam semiconductor lasers.
3. The dual wavelength laser beam combining device based on wavelength beam combining and polarization beam combining according to claim 2, wherein: the second beam combining module comprises a second stepped heat sink arranged on the water cooling plate, more than one second Shan Ba semiconductor laser arranged on the second stepped heat sink, a second fast axis collimating mirror matched with the number of the second Shan Ba semiconductor lasers, a second slow axis collimating mirror matched with the number of the second Shan Ba semiconductor lasers, a second reflecting mirror unit matched with the number of the second Shan Ba semiconductor lasers and the number of the second Shan Ba semiconductor lasers, the second fast axis collimating mirror is arranged at a light outlet of the second Shan Ba semiconductor lasers, the second slow axis collimating mirror is arranged at the front side of the second fast axis collimating mirror, the second reflecting mirror unit is arranged at the front side of the second slow axis collimating mirror, and the second stepped ladder is provided with a heat sink matched with the number of the second Shan Ba semiconductor lasers.
4. The dual wavelength laser beam combining device based on wavelength beam combining and polarization beam combining according to claim 3, wherein: the third beam combining module comprises a third stepped heat sink arranged on the water cooling plate, more than one third single-bar semiconductor laser arranged on the third stepped heat sink, a third fast-axis collimating mirror matched with the number of the third single-bar semiconductor lasers, a third slow-axis collimating mirror matched with the number of the third single-bar semiconductor lasers and a third reflecting mirror unit matched with the number of the third single-bar semiconductor lasers, wherein the third fast-axis collimating mirror is arranged at a light outlet of the third single-bar semiconductor lasers, the third slow-axis collimating mirror is arranged at the front side of the third fast-axis collimating mirror, and the third reflecting mirror unit is arranged at the front side of the third slow-axis collimating mirror, and the third stepped is provided with a heat sink matched with the number of the third single-bar semiconductor lasers.
5. The dual wavelength laser beam combining device based on wavelength beam combining and polarization beam combining according to claim 4, wherein: the fourth beam combining module comprises a fourth stepped heat sink arranged on the water cooling plate, more than one fourth single-bar semiconductor laser arranged on the fourth stepped heat sink, a fourth fast-axis collimating mirror matched with the number of the fourth single-bar semiconductor lasers, a fourth slow-axis collimating mirror matched with the number of the fourth single-bar semiconductor lasers and a fourth reflecting mirror unit matched with the number of the fourth single-bar semiconductor lasers, wherein the fourth fast-axis collimating mirror is arranged at a light outlet of the fourth single-bar semiconductor lasers, the fourth slow-axis collimating mirror is arranged at the front side of the fourth fast-axis collimating mirror, the fourth reflecting mirror unit is arranged at the front side of the fourth slow-axis collimating mirror, and the fourth stepped is provided with a heat sink matched with the number of the fourth single-bar semiconductor lasers.
6. The dual wavelength laser beam combining device based on wavelength beam combining and polarization beam combining according to claim 5, wherein: the first fast axis collimating mirror, the first light beam converting mirror and the first slow axis collimating mirror are coated with a first antireflection film, the first reflecting mirror unit is coated with a first reflecting mirror unit reflecting film, and the first reflecting mirror unit reflecting film is used for reflecting first laser to the first reflecting mirror; the second fast axis collimating mirror, the second beam converting mirror and the second slow axis collimating mirror are coated with a second antireflection film, the second reflecting mirror unit is coated with a second reflecting mirror unit reflecting film, and the second reflecting mirror unit reflecting film is used for reflecting second laser to the first wavelength beam combining mirror; the third fast axis collimating mirror, the third light beam converting mirror and the third slow axis collimating mirror are coated with a third antireflection film, the third reflecting mirror unit is coated with a third reflecting mirror unit reflecting film, and the third reflecting mirror unit reflecting film is used for reflecting the first laser to the second reflecting mirror; the fourth fast axis collimating mirror, the fourth light beam converting mirror and the fourth slow axis collimating mirror are coated with a fourth antireflection film, the fourth reflecting mirror unit is coated with a fourth reflecting mirror unit reflecting film, and the fourth reflecting mirror unit reflecting film is used for reflecting fourth laser to the second wavelength beam combining mirror.
7. The dual wavelength laser beam combining device based on wavelength beam combining and polarization beam combining according to claim 6, wherein: the first reflecting film is used for reflecting the first laser to the first wavelength beam combining mirror; the second reflecting film is plated on the second reflecting mirror and is used for reflecting the third laser to the second wavelength beam combining mirror.
8. The dual wavelength laser beam combining device based on wavelength beam combining and polarization beam combining according to claim 7, wherein: the first wavelength beam combining lens is plated with a third reflection film for second laser and a fifth reflection film for first laser, and the second wavelength beam combining lens is plated with a fourth reflection film for fourth laser and a sixth reflection film for third laser.
9. The dual wavelength laser beam combining device based on wavelength beam combining and polarization beam combining according to claim 8, wherein: the half-wave plate is plated with a seventh antireflection film for the third laser and the fourth laser; the polarization beam combining lens is plated with eighth antireflection films for the first laser, the second laser, the third laser and the fourth laser; the focusing mirror is plated with a ninth antireflection film for the first laser, the second laser, the third laser and the fourth laser.
10. The dual wavelength laser beam combining device based on wavelength beam combining and polarization beam combining according to claim 9, wherein: the first and third laser wavelengths were 915nm and the second and fourth laser wavelengths were 450nm.
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Application publication date: 20230509 |