CN115954761A - Multi-single-tube semiconductor laser beam combining device - Google Patents
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- CN115954761A CN115954761A CN202211191260.2A CN202211191260A CN115954761A CN 115954761 A CN115954761 A CN 115954761A CN 202211191260 A CN202211191260 A CN 202211191260A CN 115954761 A CN115954761 A CN 115954761A
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Abstract
The invention discloses a multi-single-tube semiconductor laser beam combining device, which comprises: a stepped heat sink having a sequentially increasing height; each step surface of the stepped heat sink is provided with: two semiconductor lasers are welded on the stepped heat sink in a face-to-face arrangement mode; the fast axis collimating lens is arranged in front of the semiconductor laser; the slow axis collimating lens is arranged in front of the fast axis collimating lens; each two groups of overlapped thin reflecting mirrors are arranged in front of the slow axis collimating lens to change the direction of the laser light path; the large reflecting mirror is arranged in front of the first combined beam light path and changes the direction of the light path; the polarization beam combiner is arranged at the intersection point of the two groups of light paths; and the focusing lens is arranged in front of the stepped heat sink. The multi-single-tube semiconductor laser beam combining device provided by the invention adopts the overlapped thin reflecting mirror to reflect a plurality of single-tube laser beams arranged face to face, so that the optical path difference of laser light paths at different transverse positions is reduced, and a semiconductor laser module with high power and high brightness is obtained.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a multi-single-tube semiconductor laser beam combining device.
Background
In recent decades, high power semiconductor lasers have been widely used in laser material processing, laser information processing, laser biology and medicine, laser printing, communication, laser chemistry, laser detection and measurement, and national defense security. In case of higher power requirements, laser beam combination is necessary in order to maintain high beam quality.
The laser beam combination is a process of coupling a plurality of beams of unit laser into one beam, and the purposes of improving output power and increasing laser brightness are achieved by utilizing refraction, reflection and diffraction effects of an optical element. Compared with a laser bar, the single-tube semiconductor laser has the advantages of good heat dissipation, high brightness, low cost, good reliability, no smile effect and good light beam quality, so that the optical fiber coupling module mostly adopts multi-single-tube beam combination.
However, for combining a plurality of single-tube semiconductor lasers, fast-axis stacking is required, so that half of the lasers are welded on a heat sink in a slow-axis linear arrangement mode, the optical path length of a single tube at a far position relative to an optical fiber port is longer than that of a single tube at a near position, and the shapes of light beam spots of different optical paths at a focusing lens are different due to the existence of a residual divergence angle after collimation. Therefore, in order to obtain a semiconductor laser fiber coupling module with higher efficiency and higher brightness, the problem that the optical path difference of the laser in a multi-single-tube beam combining module is too large needs to be solved.
Disclosure of Invention
The invention provides a multi-single-tube semiconductor laser beam combining device for making up the defects of the prior art, and the multi-single-tube semiconductor laser beam combining device can shorten the optical path difference of different light beams arranged in the fast axis direction reaching the end face of an optical fiber so as to obtain a semiconductor laser module with high power and high brightness.
The invention is realized by the following technical scheme:
the invention relates to a multi-single-tube semiconductor laser beam combining device, which comprises: a stepped heat sink having a sequentially increasing height; each step surface of the step heat sink is provided with: the device comprises a semiconductor laser, a fast axis collimating lens, a slow axis collimating lens, two thin reflecting lenses which are overlapped in each group, and a focusing lens, wherein the stepped heat sink is also provided with the focusing lens; the semiconductor lasers are welded on the stepped heat sink in a face-to-face arrangement mode; the fast axis collimating lens is arranged in front of the semiconductor laser, receives laser emitted by the semiconductor laser and performs primary fast axis collimation; the slow axis collimating lens is arranged in front of the fast axis collimating lens, receives the laser after primary collimation and performs secondary slow axis collimation; the thin reflectors are overlapped in every two groups, are arranged between every two groups of slow axis collimating mirrors which are arranged face to face, and change the direction of a laser light path; and the focusing mirror is arranged in front of the beam combination optical path and is used for focusing the light beam so as to carry out optical fiber coupling.
Furthermore, the thin reflecting mirror is positioned in the middle of each group of face-to-face light-emitting semiconductor lasers, the long edge of the thin reflecting mirror forms an angle of 45 degrees with light, and the height of the thin reflecting mirror is equal to the step difference value; every two thin reflectors are overlapped in the fast axis direction, and are arranged in a height difference mode in the fast axis direction in an overlapping mode, so that the collimated light paths are arranged in the fast axis mode, and spatial beam combination is achieved.
Furthermore, the semiconductor lasers are arranged and welded on the stepped heat sink in a mode that every two semiconductor lasers emit light face to face, and the two semiconductor lasers have a height difference on a fast axis.
Furthermore, the stepped heat sink is provided with a left set of semiconductor laser, a right set of semiconductor laser, a fast axis collimating mirror, a slow axis collimating mirror and two thin reflecting mirrors which are overlapped in a group, so as to form two optical path groups, the heat sink steps of each group are arranged in a face-to-face mode, and the height difference of the fast axis exists between the heat sink steps, so that the spatial beam combination in the fast axis direction is convenient.
Furthermore, a large reflector is further mounted on the stepped heat sink, the large reflector is arranged in front of the overlapped thin reflector of the first optical path group, namely in front of the first combined beam optical path, and the optical path of the semiconductor laser in the group is reflected by the large reflector for 45 degrees after being combined by the overlapped thin reflectors so as to change the direction of the optical path and perform polarization beam combination.
Furthermore, one side of the polarization beam combiner is provided with a half-wave plate, and one group of optical paths pass through the half-wave plate before reaching the polarization beam combiner so as to change the polarization state of the optical beams and perform polarization beam combination.
Furthermore, a polarization beam combiner is also arranged on the stepped heat sink; the polarization beam combining mirror is arranged at the focuses of the two groups of light paths and is used for carrying out polarization beam combining on the two paths of light beams.
Furthermore, the fast axis collimating lens is an aspheric cylindrical lens, and the slow axis collimating lens is a spherical cylindrical lens.
Furthermore, the focusing lens is an aspheric lens, is arranged in front of the beam combination light path, and focuses the beam combination light beam to perform optical fiber coupling.
Each two sets of thin overlapping mirrors employ a reflecting prism.
The multi-single-tube semiconductor laser beam combining device has the advantages that the overlapped thin reflecting mirror is adopted to reflect two single-tube laser beams which are arranged face to face, the distance between the two light beams can be very close after the two light beams are reflected at 45 degrees, the optical path lengths of the two light beams are the same, and therefore the optical path difference of laser paths at different transverse positions (different steps) is reduced, and the semiconductor laser module with high power and high brightness is obtained.
Drawings
Fig. 1 is a schematic view of a semiconductor laser single-tube spatial beam combining structure according to a first embodiment of the present invention;
fig. 2 is a schematic view of a semiconductor laser single-tube spatial polarization beam combining structure according to a second embodiment of the present invention;
fig. 3 is a schematic view of a structure of an overlapped thin mirror.
In the figure: the laser comprises a step heat sink 1, a semiconductor laser tube core 2, a fast axis collimating mirror 3, a slow axis collimating mirror 4, a thin reflecting mirror 5, a large reflecting mirror 6, a half-wave plate 7, a polarization beam combining mirror 8 and a focusing mirror 9.
Detailed Description
Example one
Referring to fig. 1, there is provided a multi-single-tube semiconductor laser beam combining apparatus, including: a stepped heat sink 1 whose height is sequentially raised; each step surface of the step heat sink is provided with: the device comprises a semiconductor laser 2, a fast axis collimating lens 3, a slow axis collimating lens 4, two thin reflecting lenses 5 which are overlapped in each group, and a focusing lens 9 which is arranged on a ladder heat sink; two semiconductor lasers 2 are welded on the stepped heat sink in a face-to-face arrangement mode; the fast axis collimating lens 3 is arranged in front of the semiconductor laser, receives laser emitted by the semiconductor laser and performs primary fast axis collimation; the slow axis collimating lens 4 is arranged in front of the fast axis collimating lens, receives the laser after primary collimation and carries out secondary slow axis collimation; the thin reflecting mirrors 5 are overlapped in every two groups, are arranged between every two groups of slow axis collimating mirrors which are arranged face to face, and change the direction of a laser light path; and the focusing mirror 9 is arranged in front of the beam combination optical path and is used for focusing the light beams to carry out optical fiber coupling.
The thin reflector is positioned in the middle of each group of face-to-face light-emitting semiconductor lasers, the long edge of the thin reflector forms an angle of 45 degrees with light, and the height of the thin reflector is equal to the step difference value. Every two thin reflectors are overlapped and fixed together in a staggered mode (can be adhered together) in the fast axis direction, and are arranged in a height difference mode in the fast axis direction in every two overlapping modes, so that the collimated light paths are arranged in the fast axis mode, and spatial beam combination is achieved.
The semiconductor lasers are arranged and welded on the stepped heat sink in a mode that every two semiconductor lasers emit light face to face, and the two semiconductor lasers have height difference on a fast axis.
The stepped heat sink is provided with a semiconductor laser, a fast axis collimating mirror, a slow axis collimating mirror and every two thin reflecting mirrors overlapped in a group, the two thin reflecting mirrors are divided into two optical path groups, the heat sink steps on each layer are arranged in every two face-to-face modes, and the height difference on the fast axis exists between every two thin reflecting mirrors so as to facilitate the spatial beam combination in the fast axis direction.
The fast axis collimating lens is an aspheric cylindrical lens, and the slow axis collimating lens is a spherical cylindrical lens.
The focusing lens is an aspheric lens and is arranged in front of the beam combination light path to focus the beam combination light beam so as to carry out optical fiber coupling.
The semiconductor laser comprises a laser chip and a small heat sink, wherein the laser chip is welded on the small heat sink at the bottom, and the small heat sink is welded on the stepped heat sink. The fast axis collimating lens is adhered to the front end of the small heat sink and has a tiny micron-sized distance from the semiconductor laser chip.
Example two
Referring to fig. 2, the second embodiment combines with the first embodiment, and provides a multi-single-tube semiconductor laser beam combining device, which combines polarization beam combining on the basis of the first embodiment. The device includes: a stepped heat sink 1 whose height is sequentially raised; each step surface of the stepped heat sink is provided with: the device comprises a semiconductor laser 2, a fast axis collimating mirror 3, a slow axis collimating mirror 4, two thin reflecting mirrors 5 which are overlapped in each group, and a large reflecting mirror 6, a half-wave plate 7, a polarization beam combining mirror 8 and a focusing mirror 9 which are further arranged on a ladder heat sink; two semiconductor lasers 2 are welded on the stepped heat sink in a face-to-face arrangement mode; the fast axis collimating lens 3 is arranged in front of the semiconductor laser, receives laser emitted by the semiconductor laser and carries out primary fast axis collimation; the slow axis collimating lens 4 is arranged in front of the fast axis collimating lens, receives the laser after primary collimation and carries out secondary slow axis collimation; the thin reflecting mirrors 5 are overlapped in every two groups, are arranged between every two groups of slow axis collimating mirrors which are arranged face to face, and change the direction of a laser light path; the large reflecting mirror 6 is arranged in front of the first combined beam light path and changes the direction of the light path; the half-wave plate 7 is arranged behind the large reflecting mirror 6 and is positioned on one side of the polarization beam combiner and used for changing the polarization state of the first combined beam light so as to obtain the polarization state orthogonal to the second combined beam light; the polarization beam combining mirror 8 is arranged at the intersection point of the two combined beam light paths and is used for carrying out polarization beam combination on the two groups of light beams; and the focusing mirror 9 is arranged in front of the polarization beam combiner and is used for focusing the light beams so as to carry out optical fiber coupling.
The thin reflector is positioned in the middle of each group of face-to-face light-emitting semiconductor lasers, the long edge of the thin reflector forms an angle of 45 degrees with light, and the height of the thin reflector is equal to the step difference; every two thin reflectors are overlapped and fixed together in a staggered mode (can be adhered together) in the fast axis direction, and are arranged in a height difference mode in the fast axis direction in every two overlapping modes, so that the collimated light paths are arranged in the fast axis mode, and spatial beam combination is achieved.
The semiconductor lasers are arranged and welded on the stepped heat sink in a mode that every two semiconductor lasers emit light face to face, and the two semiconductor lasers have height difference on a fast axis.
The left and right sets of thin reflecting mirrors with semiconductor laser, fast axis collimating mirror, slow axis collimating mirror and every two sets of overlapping are set on the ladder heat sink to form two optical path sets, the heat sink steps of each set are arranged in every two face-to-face modes, and have a height difference on the fast axis between each other, so as to carry out space beam combination in the fast axis direction.
On the basis of the implementation procedure of the first embodiment, a large mirror is disposed in front of the overlapping thin mirror of the first optical path, and the optical path of the group of semiconductor lasers combined by the overlapping thin mirrors is reflected by the large mirror for 45 degrees to change the direction of the optical path, so as to perform polarization beam combination.
The polarization beam combining mirror is arranged at the focuses of the two groups of light paths and is used for carrying out polarization beam combining on the two paths of light beams.
The fast axis collimating lens is an aspheric cylindrical lens. The slow axis collimating lens is a spherical cylindrical lens.
One group of light paths passes through a half-wave plate before reaching the polarization beam combining mirror so as to change the polarization state of the light beams and carry out polarization beam combination. (half-wave plate and polarization beam combiner may be bonded to each other or not).
The focusing lens is an aspheric lens and is arranged in front of the polarization beam combiner to focus the combined beam so as to perform optical fiber coupling.
The semiconductor laser chip is welded on the small heat sink at the bottom, the small heat sink is welded on the stepped heat sink, the fast axis collimating lens is adhered at the front end of the small heat sink, and the distance from the fast axis collimating lens to the semiconductor laser chip is of a tiny micron order.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A multi-single-tube semiconductor laser beam combining device is characterized by comprising a stepped heat sink with sequentially-increased height; each step surface of the step heat sink is provided with a semiconductor laser, a fast axis collimating lens, a slow axis collimating lens and two thin reflecting lenses which are overlapped, and the step heat sink is also provided with a focusing lens;
two semiconductor lasers are welded on the stepped heat sink in a face-to-face arrangement mode;
the fast axis collimating lens is arranged in front of the semiconductor laser, receives laser emitted by the semiconductor laser and performs primary fast axis collimation;
the slow axis collimating lens is arranged in front of the fast axis collimating lens, receives the laser after primary collimation and performs secondary slow axis collimation;
the thin reflectors are overlapped in every two groups, are arranged between every two groups of slow axis collimating mirrors which are arranged face to face, and change the direction of a laser light path;
and the focusing mirror is arranged in front of the beam combination optical path and is used for focusing the light beam so as to carry out optical fiber coupling.
2. The multi-single-tube semiconductor laser beam combining device according to claim 1, wherein the thin reflecting mirror is located in the middle of each group of the face-to-face light-emitting semiconductor lasers, the long side of the thin reflecting mirror forms an angle of 45 degrees with the light, and the height of the thin reflecting mirror is equal to the step difference; every two thin reflectors are overlapped in the fast axis direction, and are arranged in a height difference mode in the fast axis direction in an overlapping mode, so that the collimated light paths are arranged in the fast axis mode, and spatial beam combination is achieved.
3. The multi-single-tube semiconductor laser beam combining device according to claim 2, wherein the semiconductor lasers are aligned and welded on the stepped heat sink in a manner that every two semiconductor lasers emit light face to face, and a height difference on a fast axis exists between the two semiconductor lasers.
4. A multi-single-tube semiconductor laser beam combining device according to any one of claims 1 to 3, wherein the left and right sets of semiconductor laser, fast axis collimator, slow axis collimator, and two thin reflectors overlapping each other are disposed on the stepped heat sink to form two optical path sets, and the heat sink steps of each set are arranged in a manner that every two are face to face and have a height difference on the fast axis therebetween, so as to perform spatial beam combining in the fast axis direction.
5. The multi-single-tube semiconductor laser beam combining device according to claim 4, wherein a large reflector is further mounted on the stepped heat sink, the large reflector is disposed in front of the thin overlapped reflector of the first optical path group, i.e. in front of the optical path of the first combined beam, and the optical path of the combined optical path of the semiconductor lasers of the group via the thin overlapped reflector is reflected by the large reflector for 45 ° to change the direction of the optical path for polarization beam combining.
6. The multi-single-tube semiconductor laser beam combining device according to claim 4, wherein a polarization beam combining mirror is further mounted on the stepped heat sink; and the polarization beam combining mirror is arranged at the intersection point of the two groups of light paths and is used for carrying out polarization beam combination on the first group of light beams and the second group of light beams.
7. The multi-tube semiconductor laser beam combining device according to claim 6, wherein a half-wave plate is further mounted on the stepped heat sink, the half-wave plate is located at one side of the polarization beam combining mirror, and one set of the optical paths passes through the half-wave plate before reaching the polarization beam combining mirror to change the polarization state of the optical beams so as to perform polarization beam combining.
8. The multi-single-tube semiconductor laser beam combining device according to any one of claims 1 to 3, wherein the fast axis collimator is an aspheric cylindrical lens.
9. The multi-single-tube semiconductor laser beam combining device according to any one of claims 1 to 3, wherein the slow-axis collimator is a spherical cylindrical lens.
10. The multi-single-tube semiconductor laser beam combining device according to any one of claims 1 to 3, wherein the focusing lens is an aspheric lens.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211191260.2A CN115954761A (en) | 2022-09-28 | 2022-09-28 | Multi-single-tube semiconductor laser beam combining device |
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| CN202211191260.2A CN115954761A (en) | 2022-09-28 | 2022-09-28 | Multi-single-tube semiconductor laser beam combining device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116154617A (en) * | 2023-04-14 | 2023-05-23 | 北京凯普林光电科技股份有限公司 | Semiconductor laser |
| CN116169556A (en) * | 2023-04-21 | 2023-05-26 | 深圳市星汉激光科技股份有限公司 | Optical fiber coupling semiconductor laser with ladder design and welding equipment |
| CN117239535A (en) * | 2023-11-10 | 2023-12-15 | 北京镭科光电科技有限公司 | Multi-die coupled semiconductor laser, coupling method and pumping source |
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2022
- 2022-09-28 CN CN202211191260.2A patent/CN115954761A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116154617A (en) * | 2023-04-14 | 2023-05-23 | 北京凯普林光电科技股份有限公司 | Semiconductor laser |
| CN116169556A (en) * | 2023-04-21 | 2023-05-26 | 深圳市星汉激光科技股份有限公司 | Optical fiber coupling semiconductor laser with ladder design and welding equipment |
| CN116169556B (en) * | 2023-04-21 | 2023-07-04 | 深圳市星汉激光科技股份有限公司 | Optical fiber coupling semiconductor laser with ladder design and welding equipment |
| CN117239535A (en) * | 2023-11-10 | 2023-12-15 | 北京镭科光电科技有限公司 | Multi-die coupled semiconductor laser, coupling method and pumping source |
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