CN112636158A - Semiconductor laser with double-layer optical path - Google Patents
Semiconductor laser with double-layer optical path Download PDFInfo
- Publication number
- CN112636158A CN112636158A CN202110243068.2A CN202110243068A CN112636158A CN 112636158 A CN112636158 A CN 112636158A CN 202110243068 A CN202110243068 A CN 202110243068A CN 112636158 A CN112636158 A CN 112636158A
- Authority
- CN
- China
- Prior art keywords
- light
- emitting module
- face
- laser
- emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention provides a semiconductor laser with a double-layer optical path, which comprises a first light-emitting module, a second light-emitting module, a beam combining device, a focusing assembly and an output optical fiber, wherein the first light-emitting module is arranged on the first light-emitting module; the first light-emitting module and the second light-emitting module are arranged oppositely up and down, and the beam combining device is arranged in the common light-emitting direction of the first light-emitting module and the second light-emitting module and is used for combining a first light beam emitted by the first light-emitting module and a second light beam emitted by the second light-emitting module; the focusing assembly is arranged in the light-emitting direction of the beam combining device and used for focusing the combined light beam and then coupling and outputting the light beam to the output optical fiber. The technical scheme that this application provided sets up two rows of laser chips relatively from top to bottom, can more effective space on utilization casing upper portion, can effectively reduce the overall dimension of laser instrument when guaranteeing laser instrument high power output.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a semiconductor laser with a double-layer optical path.
Background
The laser is a device capable of emitting laser, and generates laser through a laser chip arranged therein, but the power of a single laser chip is limited, and the brightness of the generated laser cannot meet the practical requirements, so that a plurality of semiconductor laser single tubes are required to be superposed, and the brightness of the output laser is increased. In the existing laser, a plurality of rows of laser chips are generally arranged at the bottom of the laser side by side, and in the high-power laser, the laser is oversized due to the large number of the laser chips. And two rows of laser chips set up on a horizontal plane usually in current laser instrument, owing to there is the light leak phenomenon, if two rows of laser chips set up one by one, the laser that one row of laser chip exposes can cause the interference to the light path of one row of laser chip in addition, consequently need stagger two rows of laser chips and set up, can further increase like this and arrange the required volume of laser chip, and then increase the whole volume of laser instrument.
Disclosure of Invention
In order to solve the problems, the invention provides a semiconductor laser with a double-layer optical path, wherein two rows of laser chips are arranged oppositely from top to bottom, and compared with the traditional method that the two rows of laser chips are arranged on the bottom surface of a laser shell, the laser with the double-layer optical path can more effectively utilize the space at the upper part of the shell, and light spots generated by the upper row of laser chips and the lower row of laser chips are combined by a beam combining device, so that the whole size of the laser can be effectively reduced while the high-power output of the laser is ensured, and the mutual interference between lasers generated by the two rows of laser.
The invention provides a semiconductor laser with a double-layer optical path, which comprises a first light-emitting module, a second light-emitting module, a beam combining device, a focusing assembly, an output optical fiber and a shell, wherein the first light-emitting module is arranged on the shell; the shell comprises an upper shell and a lower shell which are oppositely arranged up and down; the first light-emitting module and the second light-emitting module are respectively arranged in the upper shell and the lower shell, and the beam combining device is vertically arranged between the upper shell and the lower shell, is positioned in the common light emitting direction of the first light-emitting module and the second light-emitting module, and is used for combining a first light beam emitted by the first light-emitting module and a second light beam emitted by the second light-emitting module in the vertical direction; the focusing assembly is arranged in the light outgoing direction of the beam combining device and used for focusing the combined light beam and coupling and outputting the light beam to the output optical fiber.
Further, the first light-emitting module comprises a plurality of first light-emitting units arranged in a ladder shape, and each first light-emitting unit comprises a first laser chip; the second light-emitting module comprises a plurality of second light-emitting units which are arranged in a ladder shape, and each second light-emitting unit comprises a second laser chip; first laser chip pastes and establishes the upper casing internal surface, just first laser chip's light-emitting direction is on a parallel with go up the casing internal surface, second laser chip pastes and establishes inferior valve internal surface, just second laser chip's light-emitting direction is on a parallel with inferior valve internal surface goes up the casing and closes the back with inferior valve housing lid, and first laser chip and second laser chip set up relatively from top to bottom, and first laser chip's laser outgoing direction is the same with second laser chip's laser outgoing direction to it is parallel from top to bottom, makes the laser that first laser chip and second laser chip produced can not produce the interference each other.
Furthermore, the beam combining device comprises an upper reflecting mirror and a polarization beam combiner which are arranged oppositely up and down; the upper reflector is attached to the upper shell, arranged in the light emitting direction of the first light emitting module and used for vertically reflecting the first light beam emitted by the first light emitting module downwards to the polarization beam combiner; the polarization beam combiner is attached to the lower shell, arranged in the common light emitting direction of the upper reflector and the second light emitting module, and used for receiving the second light beam emitted by the second light emitting module and combining the first light beam and the second light beam in the up-down direction.
Furthermore, the polarization beam combiner is formed by splicing and fixing two oppositely arranged triple prisms and comprises a first light incident surface, a second light incident surface, a beam combining surface, a light emergent surface and a half-wave plate; the first light incident surface and the light emergent surface are perpendicular to each other and are positioned on the same prism, the second light incident surface and the light emergent surface are parallel to each other, the beam combining surface is positioned at the joint of the two prisms, and the half-wave plate is attached to the second light incident surface; the beam combining surface is plated with a film layer which transmits P polarized light and reflects S polarized light; the beam combining surface and the upper reflecting mirror are arranged in parallel.
Furthermore, an included angle of 45 ° is formed between the light emitting direction of the first light emitting module and the upper reflector, the first light beam and the second light beam are both S-polarized light, the first light beam enters the upper reflector at an incident angle of 45 °, and enters the beam combining surface after being reflected by the upper reflector and being perpendicular to the first light incident surface, the polarization state of the second light beam is rotated by 90 ° by the half-wave plate to be converted into P-polarized light, and the second light beam converted into P-polarized light enters the beam combining surface through the second light incident surface; the beam combination surface reflects the first light beam and transmits the second light beam to combine the first light beam and the second light beam, and the combined light beam is output to the focusing assembly through the light emitting surface.
Furthermore, the beam combining device is a vertically arranged prism, and the prism comprises an upper end surface, a lower end surface, a light incident surface and a first light emergent surface; the upper end face and the lower end face are respectively an upper end face and a lower end face of the prism, and the light incident face and the first light emergent face are respectively a front end face and a rear end face of the prism; the light incident surface and the light emergent surface are parallel to each other, and the light emergent direction of the first light emitting module is perpendicular to the light incident surface; the light-emitting direction of the second light-emitting module and the included angle between the lower end faces are 45 degrees, and the included angle between the light-incident face and the upper end face is 45 degrees.
Furthermore, a film layer for reflecting the first light beam is attached to the outer surface of the upper end face to form a reflecting surface, and a film layer for reflecting the first light beam and transmitting the second light beam is attached to the outer surface of the lower end face to form a beam combining surface; the light incident surface is attached with a half-wave plate, the reflecting surface is positioned in the light emergent direction of the first light emitting module, and the beam combining surface is positioned in the light emergent direction of the second light emitting module.
Further, the outer surface of the upper end face is plated with a reflection film layer, the outer surface of the lower end face is plated with a film layer which reflects P-polarized light and transmits S-polarized light, the first light beam is P-polarized light, the second light beam is S-polarized light, the polarization direction of the first light beam is rotated by 90 degrees by the half-wave plate 35, enters the prism through the light incident surface and is reflected to the lower end face through the upper end face, the second light beam penetrates through the lower end face and is combined with the first light beam, and the combined light beam is output to the focusing assembly through the first light emitting surface.
Furthermore, stepped heat sinks are arranged in the upper shell and the lower shell, each stepped heat sink comprises a plurality of stepped surfaces, and each stepped surface of the stepped heat sink in the upper shell is provided with a first light-emitting unit; a second light emitting unit is disposed on each step surface of the stepped heat sink in the lower case.
Furthermore, the heights of the step surfaces of the step-shaped heat sinks are sequentially arranged in an equal-difference array, and in the step-shaped heat sinks in the upper shell, the height of the step surface closer to the upper reflector is lower, and the height of the step surface farther from the upper reflector is higher, so that light spots output by light paths where the first light-emitting units are located cannot be superposed together and can enter the upper reflector; in the stepped heat sink in the lower shell, the height of the step surface closer to the second light incident surface of the polarization beam combiner is lower, and the height of the step surface farther from the second light incident surface of the polarization beam combiner is higher, so that light spots output by light paths where the second light emitting units are located cannot be superposed together and can enter the polarization beam combiner.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a structural diagram of a semiconductor laser having a double-layered optical path according to an embodiment of the present invention;
fig. 2 is a structural diagram of a housing of a semiconductor laser having a double-layered optical path according to an embodiment of the present invention;
FIG. 3 is a perspective view of the laser of FIG. 2 with the side housing removed;
FIG. 4 is a top view of the interior of a laser in accordance with one embodiment of the present invention;
FIG. 5 is a bottom view of the interior of a laser in accordance with one embodiment of the present invention;
FIG. 6 is a structural diagram of a polarization beam combiner according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of an optical path according to a first embodiment of the present invention;
FIG. 8 is a side view of the laser of FIG. 2 with a portion of the housing cut away;
fig. 9 is a perspective view of a semiconductor laser with a double-layer optical path according to a second embodiment of the present invention after a part of a housing is cut away;
FIG. 10 is a side view of the laser of FIG. 9;
fig. 11 is a schematic diagram of the optical path of the first light beam in the prism according to the second embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
For a more clear understanding of the technical features, objects and effects of the present invention, embodiments of the present invention will now be described in detail with reference to the accompanying drawings.
The first embodiment is as follows:
the present embodiment provides a semiconductor laser having a two-layer optical path. Referring to fig. 1 to 5, fig. 1 and 3 are structural diagrams of a semiconductor laser having a dual-layer optical path according to an embodiment of the present invention, fig. 2 is an external view of a housing, fig. 4 is a top view of an interior of the laser, and fig. 5 is a bottom view of the interior of the laser; the laser provided by the embodiment of the invention comprises a first light-emitting module 1, a second light-emitting module 2, a beam combining device 3, a focusing assembly 4, an output optical fiber 5 and a shell 6;
referring to fig. 2, the housing 6 includes an upper housing 61 and a lower housing 62 disposed opposite to each other in an up-down direction; the first light-emitting module 1 and the second light-emitting module 2 are respectively arranged in the upper shell 61 and the lower shell 62, and the beam combining device 3 is vertically arranged between the upper shell 61 and the lower shell 62, is located in a common light emitting direction of the first light-emitting module 1 and the second light-emitting module 2, and is used for combining a first light beam L1 emitted by the first light-emitting module 1 and a second light beam L2 emitted by the second light-emitting module 2 in the up-down direction; the focusing assembly 4 is disposed in the light outgoing direction of the beam combining device 3, and is configured to focus the combined light beam L3 and couple and output the light beam to the output optical fiber 5.
Referring to fig. 1, 4 and 5, the first light emitting module 1 includes a plurality of first light emitting units 11 arranged in a step shape, and each of the first light emitting units 11 includes a first laser chip 111; the second light emitting module 2 includes a plurality of second light emitting units 21 arranged in a step shape, and each of the second light emitting units 21 includes a second laser chip 211; first laser chip 111 pastes and establishes go up casing 61 internal surface, just first laser chip 111's light-emitting direction is on a parallel with go up casing 61 internal surface, second laser chip 211 pastes and establishes casing 62 internal surface down, just second laser chip 211's light-emitting direction is on a parallel with casing 62 internal surface down, go up casing 61 and casing 62 lid back down, first laser chip 111 and second laser chip 211 set up relatively from top to bottom, and first laser chip 111's laser outgoing direction is the same with second laser chip 211's laser outgoing direction to it is parallel from top to bottom for the laser that first laser chip 111 and second laser chip 211 produced can not produce the interference each other.
The beam combining device 3 comprises an upper reflecting mirror 35 and a polarization beam combiner 36 which are arranged oppositely up and down; the upper reflector 35 is attached to the upper housing 61, is arranged in the light emitting direction of the first light emitting module 1, and is configured to vertically reflect a first light beam L1 emitted by the first light emitting module 1 downward to the polarization beam combiner 36; the polarization beam combiner 36 is attached to the lower housing 62, and is disposed in the common light-emitting direction of the upper reflector 35 and the second light-emitting module 2, and configured to receive the second light beam L2 emitted by the second light-emitting module 2, and combine the first light beam L1 and the second light beam L2 in the vertical direction.
Referring to fig. 6, the polarization beam combiner 36 is formed by bonding and fixing two oppositely arranged triple prisms, and includes a first light incident surface 361, a second light incident surface 362, a beam combining surface 363, a light emitting surface 364, and a half-wave plate 365; the first light incident surface 361 and the light emitting surface 364 are perpendicular to each other and are located on the same prism, the second light incident surface 362 and the light emitting surface 364 are parallel to each other, the beam combining surface 363 is located at the joint of the two prisms, and the half-wave plate 365 is attached to the second light incident surface 362; the beam combining surface 363 is plated with a film layer for transmitting the P polarized light and reflecting the S polarized light.
Referring to fig. 7, fig. 7 is a light path diagram of the present embodiment; an included angle of 45 degrees is formed between the light emitting direction of the first light emitting module 1 and the upper reflector 35, and the beam combining surface 363 and the upper reflector 35 are arranged in parallel. In this embodiment, the first light beam L1 and the second light beam L2 are both S-polarized light, the first light beam L1 enters the upper reflector 35 at an incident angle of 45 °, and enters the beam combining plane 363 through the first light incident surface 361 after being reflected by the upper reflector 35, the polarization state of the second light beam L2 is rotated by the half-wave plate 365 to be converted into P-polarized light, the second light beam L2 converted into P-polarized light enters the beam combining plane 363 through the second light incident surface 362, the beam combining plane 363 reflects the first light beam L1 and transmits the second light beam L2 to combine the first light beam L1 and the second light beam L2, and the combined light beam L3 is output to the focusing assembly 4 through the light emitting surface 364.
The focusing assembly 4 includes a fast-axis focusing lens 41 and a slow-axis focusing lens 42, the fast-axis focusing lens 41 is disposed in the light-emitting direction of the polarization beam combiner 36, and is configured to focus the bundled light beam L3 in the fast-axis direction, and the slow-axis focusing lens 42 is disposed in the light-emitting direction of the fast-axis focusing lens 41, and is configured to focus the bundled light beam L3 in the slow-axis direction, and couple and output the bundled light beam to the output optical fiber 5.
Referring to fig. 4 and 5, the first light emitting unit 11 further includes a first fast axis collimator 112, a first slow axis collimator 113, and a first reflector 114 corresponding to the first laser chip 111; the first fast axis collimator 112 is disposed in the light emitting direction of the first laser chip 111, the first slow axis collimator 113 is disposed in the light emitting direction of the first fast axis collimator 112, and the first reflector 114 is disposed in the light emitting direction of the first slow axis collimator 113; the laser emitted by the first laser chip 111 passes through the first fast axis collimator 112, the first slow axis collimator 113 and the first reflector 114 in sequence and then is converted into parallel laser beams, and the parallel laser beams output by the plurality of first light emitting units 11 form the first light beam L1 and are emitted into the upper reflector 35. The second light-emitting unit 21 further includes a second fast axis collimator 212, a second slow axis collimator 213 and a second reflector 214 corresponding to the second laser chip 211; the second fast axis collimator 212 is disposed in the light-emitting direction of the second laser chip 211, the second slow axis collimator 213 is disposed in the light-emitting direction of the second fast axis collimator 212, and the second reflector 214 is disposed in the light-emitting direction of the second slow axis collimator 213; the laser emitted by the second laser chip 211 passes through the second fast axis collimator 212, the second slow axis collimator 213 and the second reflector 214 in sequence and is converted into parallel laser beams, and the parallel laser beams output by the plurality of second light-emitting units 21 form the second light beam L2 and enter the polarization beam combiner 36.
In the embodiment of the invention, the upper shell 61 and the lower shell 62 are fixed together by screws, high temperature resistant glue and other ways to form a sealed shell 6; the first light-emitting module 1, the second light-emitting module 2, the beam combining device 3 and the focusing assembly 4 are all packaged in the shell 6, optical fiber mounting holes are formed in corresponding positions of the lower shell 62, and the output optical fibers 5 are inserted in the optical fiber mounting holes.
Referring to fig. 8, stepped heat sinks are disposed in the upper housing 61 and the lower housing 62, each stepped heat sink includes a plurality of stepped surfaces, and each stepped surface of the stepped heat sink in the upper housing 61 is provided with a first laser chip 111, a first fast axis collimating mirror 112, a first slow axis collimating mirror 113, and a first reflector 114 corresponding to the first light emitting unit 11; each step surface of the stepped heat sink in the lower housing 62 is provided with a second laser chip 211, a second fast axis collimating mirror 212, a second slow axis collimating mirror 213 and a second reflecting mirror 214 corresponding to the second light-emitting unit 21.
The heights of the step surfaces of the step-shaped heat sinks are sequentially arranged in an equal-difference array, and in the step-shaped heat sinks in the upper shell 61, the height of the step surface closer to the upper reflector 35 is lower, and the height of the step surface farther from the upper reflector 35 is higher, so that light spots output by light paths of the first light-emitting units 11 cannot be superposed together and can enter the upper reflector 35; in the stepped heat sink in the lower case 62, the height of the step surface closer to the second light incident surface 362 of the polarization beam combiner 36 is lower, and the height of the step surface farther from the second light incident surface 362 of the polarization beam combiner 36 is higher, so that light spots output by the light paths of the second light emitting units 21 can enter the polarization beam combiner 36 without being overlapped.
When the laser works, parallel laser beams output by each first light-emitting unit 11 form a first light beam L1, the first light beam L1 enters the polarization beam combiner 36 after being reflected by the upper reflector 35, parallel laser beams output by each second light-emitting unit 21 form a second light beam L2, the second light beam L2 directly enters the polarization beam combiner 36, the first light beam L1 and the second light beam L2 are combined at the beam combining surface 363 of the polarization beam combiner 36, the combined light beam L3 is output to the fast axis focusing lens 41 through the light emitting surface 364, the fast axis focusing lens 41 performs fast axis focusing on the combined light beam L3 and outputs the combined light beam to the slow axis focusing lens 42, and the slow axis focusing lens 42 performs slow axis focusing on the combined light beam L3 and then couples and outputs the combined light beam to the output optical fiber 5.
Example two:
referring to fig. 9 and 10, fig. 9 is a structural diagram of a semiconductor laser having a double-layer optical path according to the present embodiment, and fig. 10 is a side view of the laser in the present embodiment after a portion of a housing is cut away; in this embodiment, the beam combiner 3 is a vertically disposed prism, and the upper portion of the prism is fixedly connected to the upper housing 61, and the lower portion of the prism is fixedly connected to the lower housing 62. Referring to fig. 11, the prism includes an upper end surface 31, a lower end surface 32, a light incident surface 33, and a first light emitting surface 34; the upper end surface 31 and the lower end surface 32 are respectively an upper end surface and a lower end surface of the prism, and the light incident surface 33 and the first light emitting surface 34 are respectively a front end surface and a rear end surface of the prism (an end surface close to the focusing assembly 4 is a rear end surface, and an end surface close to the second light emitting module 2 is a front end surface); the light incident surface 33 and the light emitting surface 34 are parallel to each other, the light emitting direction of the first light emitting module 1 is perpendicular to the light incident surface 33, the included angle between the light emitting direction of the second light emitting module 2 and the lower end surface 32 is 45 degrees, and the included angle between the light incident surface 33 and the upper end surface 31 is 45 degrees; the outer surface of the upper end face 31 is adhered with a film layer for reflecting the first light beam L1 to form a reflecting surface, and the outer surface of the lower end face 32 is adhered with a film layer for reflecting the first light beam L1 and transmitting the second light beam L2 to form a beam combining surface; the light incident surface is adhered with a half-wave plate 35, the reflecting surface is positioned in the light emergent direction of the first light emitting module 1, and the beam combining surface is positioned in the light emergent direction of the second light emitting module 2.
Specifically, in this embodiment, a reflective film layer is plated on the outer surface of the upper end surface 31, a film layer that reflects P-polarized light and transmits S-polarized light is plated on the outer surface of the lower end surface 32, the first light beam L1 and the second light beam L2 are both S-polarized light, the polarization direction of the first light beam L1 is rotated by 90 ° by the half-wave plate 35, enters the prism through the light incident surface 33, and is reflected to the lower end surface 32 through the upper end surface 31, the second light beam L2 passes through the lower end surface 32 and is combined with the first light beam L1, and the combined light beam L3 is output to the focusing assembly 4 through the first light emitting surface 34.
In the present embodiment, in the stepped heat sinks in the upper and lower cases 61 and 62, the height of the stepped surface closer to the prism is lower, and the height of the stepped surface farther from the prism is higher, so that the light spots output by the optical paths of the first and second light-emitting units 11 and 21 can enter the prism without being superimposed on each other.
When the laser works, parallel laser beams output by each first light-emitting unit 11 form a first light beam L1, the first light beam L1 enters the upper end face 31 of the prism perpendicular to the light-in face 33, the upper end face 31 of the prism reflects the first light beam L1 to the lower end face 32, the parallel laser beams output by each second light-emitting unit 21 form a second light beam L2, the lower end face 32 reflects the first light beam L1 and transmits the second light beam L2 to combine the first light beam L1 and the second light beam L2, the combined light beam L3 is output to the fast-axis focusing lens 41 through the first light-out face 34, the fast-axis focusing lens 41 performs fast-axis focusing on the combined light beam L3 and outputs the combined light beam to the slow-axis focusing lens 42, and the light beam L3 after being combined by the slow-axis focusing lens 42 is coupled and output to the output optical fiber after being slow-axis focused.
The parts not described in this embodiment are the same as those in the first embodiment, and are not described again in this embodiment.
It should be noted that: the light path diagrams in the first embodiment and the second embodiment are both simplified light path diagrams, which are only used for understanding the technical scheme and are not the shapes of actual light beams; in the two embodiments, the polarization states of the first light beam and the second light beam, the lower end surface of the prism, and the type of the film layer plated on the beam combining surface of the polarization beam combiner can be adjusted according to actual requirements, and are not limited to the two embodiments. For example, in the first embodiment, the beam combining plane 363 of the polarization beam combiner 36 may be plated with a film layer that transmits S-polarized light and reflects P-polarized light, and both the first light beam L1 and the second light beam L2 are P-polarized light. In the second embodiment, the outer surface of the lower end surface 32 of the prism may be plated with a film layer for reflecting S-polarized light and transmitting P-polarized light, the first light beam is S-polarized light, and the second light beam is P-polarized light, which can also achieve the purpose of the present application.
The invention has the beneficial effects that: the technical scheme that this application provided sets up two rows of laser chips relatively from top to bottom, for the traditional technical scheme that all sets up two rows of laser chips in laser instrument casing bottom surface, the space on this application can more effectual utilization casing upper portion, closes the bundle through the facula that the device that closes two rows of laser chips produced from top to bottom, can effectively reduce the overall dimension of laser instrument when guaranteeing laser instrument high power output, also can avoid the mutual interference between the laser that two rows of laser chips produced.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it: although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. A semiconductor laser having a double-layer optical path, comprising: the method comprises the following steps: the device comprises a first light-emitting module, a second light-emitting module, a beam combining device, a focusing assembly, an output optical fiber and a shell;
the shell comprises an upper shell and a lower shell which are oppositely arranged up and down; the first light-emitting module and the second light-emitting module are respectively arranged in the upper shell and the lower shell, and the beam combining device is vertically arranged between the upper shell and the lower shell, is positioned in the common light emitting direction of the first light-emitting module and the second light-emitting module, and is used for combining a first light beam emitted by the first light-emitting module and a second light beam emitted by the second light-emitting module in the vertical direction; the focusing assembly is arranged in the light outgoing direction of the beam combining device and used for focusing the combined light beam and coupling and outputting the light beam to the output optical fiber.
2. A semiconductor laser having a dual-layer optical path as claimed in claim 1, wherein: the first light-emitting module comprises a plurality of first light-emitting units which are arranged in a ladder shape, and each first light-emitting unit comprises a first laser chip; the second light-emitting module comprises a plurality of second light-emitting units which are arranged in a ladder shape, and each second light-emitting unit comprises a second laser chip; first laser chip pastes and establishes the upper casing internal surface, just first laser chip's light-emitting direction is on a parallel with go up the casing internal surface, second laser chip pastes and establishes inferior valve internal surface, just second laser chip's light-emitting direction is on a parallel with inferior valve internal surface goes up the casing and closes the back with inferior valve housing lid, and first laser chip and second laser chip set up relatively from top to bottom, and first laser chip's laser outgoing direction is the same with second laser chip's laser outgoing direction to it is parallel from top to bottom, makes the laser that first laser chip and second laser chip produced can not produce the interference each other.
3. A semiconductor laser having a dual-layer optical path as claimed in claim 2, wherein: the beam combining device comprises an upper reflector and a polarization beam combiner which are arranged up and down oppositely; the upper reflector is attached to the upper shell, arranged in the light emitting direction of the first light emitting module and used for vertically reflecting the first light beam emitted by the first light emitting module downwards to the polarization beam combiner; the polarization beam combiner is attached to the lower shell, arranged in the common light emitting direction of the upper reflector and the second light emitting module, and used for receiving the second light beam emitted by the second light emitting module and combining the first light beam and the second light beam in the up-down direction.
4. A semiconductor laser having a dual-layer optical path as claimed in claim 3, wherein: the polarization beam combiner is formed by splicing and fixing two oppositely arranged triangular prisms and comprises a first light incident surface, a second light incident surface, a beam combining surface, a light emitting surface and a half-wave plate; the first light incident surface and the light emergent surface are perpendicular to each other and are positioned on the same prism, the second light incident surface and the light emergent surface are parallel to each other, the beam combining surface is positioned at the joint of the two prisms, and the half-wave plate is attached to the second light incident surface; the beam combining surface is plated with a film layer which transmits P polarized light and reflects S polarized light; the beam combining surface and the upper reflecting mirror are arranged in parallel.
5. A semiconductor laser having a dual-layer optical path as claimed in claim 4, wherein: an included angle of 45 degrees is formed between the light outgoing direction of the first light-emitting module and the upper reflecting mirror, the first light beam and the second light beam are both S polarized light, the first light beam enters the upper reflecting mirror at an incident angle of 45 degrees, is reflected by the upper reflecting mirror and then enters the beam combining surface in a manner of being perpendicular to the first light incoming surface, the polarization state of the second light beam is rotated by 90 degrees by the half-wave plate to be converted into P polarized light, and the second light beam converted into P polarized light enters the beam combining surface through the second light incoming surface; the beam combination surface reflects the first light beam and transmits the second light beam to combine the first light beam and the second light beam, and the combined light beam is output to the focusing assembly through the light emitting surface.
6. A semiconductor laser having a dual-layer optical path as claimed in claim 2, wherein: the beam combining device is a vertically arranged prism, and the prism comprises an upper end surface, a lower end surface, a light incident surface and a first light emergent surface; the upper end face and the lower end face are respectively an upper end face and a lower end face of the prism, and the light incident face and the first light emergent face are respectively a front end face and a rear end face of the prism; the light incident surface and the light emergent surface are parallel to each other, and the light emergent direction of the first light emitting module is perpendicular to the light incident surface; the light-emitting direction of the second light-emitting module and the included angle between the lower end faces are 45 degrees, and the included angle between the light-incident face and the upper end face is 45 degrees.
7. A semiconductor laser having a dual-layer optical path as claimed in claim 6, wherein: the outer surface of the upper end face is adhered with a film layer for reflecting the first light beam to form a reflecting surface, and the outer surface of the lower end face is adhered with a film layer for reflecting the first light beam and transmitting the second light beam to form a beam combining surface; the light incident surface is attached with a half-wave plate, the reflecting surface is positioned in the light emergent direction of the first light emitting module, and the beam combining surface is positioned in the light emergent direction of the second light emitting module.
8. A semiconductor laser having a dual-layer optical path as claimed in claim 7, wherein: the outer surface of the upper end face is plated with a reflection film layer, the outer surface of the lower end face is plated with a film layer which reflects P polarized light and transmits S polarized light, the first light beam and the second light beam are both S polarized light, the polarization direction of the first light beam is rotated by 90 degrees by the half-wave plate, then the first light beam enters the prism through the light incident face and is reflected to the lower end face through the upper end face, the second light beam penetrates through the lower end face and is combined with the first light beam, and the combined light beam is output to the focusing assembly through the first light emitting face.
9. A semiconductor laser having a dual-layer optical path as claimed in claim 3, wherein: the upper shell and the lower shell are both provided with a stepped heat sink, the stepped heat sink comprises a plurality of step surfaces, and each step surface of the stepped heat sink in the upper shell is provided with a first light-emitting unit; a second light emitting unit is disposed on each step surface of the stepped heat sink in the lower case.
10. A semiconductor laser having a dual-layer optical path as claimed in claim 9, wherein: the heights of the step surfaces of the step-shaped heat sinks are sequentially arranged in an equal-difference array, and in the step-shaped heat sinks in the upper shell, the step surfaces which are closer to the upper reflector are lower in height, and the step surfaces which are farther from the upper reflector are higher in height, so that light spots output by light paths where the first light-emitting units are located cannot be superposed together and can enter the upper reflector; in the stepped heat sink in the lower shell, the height of the step surface closer to the second light incident surface of the polarization beam combiner is lower, and the height of the step surface farther from the second light incident surface of the polarization beam combiner is higher, so that light spots output by light paths where the second light emitting units are located cannot be superposed together and can enter the polarization beam combiner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110243068.2A CN112636158A (en) | 2021-03-05 | 2021-03-05 | Semiconductor laser with double-layer optical path |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110243068.2A CN112636158A (en) | 2021-03-05 | 2021-03-05 | Semiconductor laser with double-layer optical path |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112636158A true CN112636158A (en) | 2021-04-09 |
Family
ID=75297568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110243068.2A Pending CN112636158A (en) | 2021-03-05 | 2021-03-05 | Semiconductor laser with double-layer optical path |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112636158A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116169556A (en) * | 2023-04-21 | 2023-05-26 | 深圳市星汉激光科技股份有限公司 | Optical fiber coupling semiconductor laser with ladder design and welding equipment |
| CN117381212A (en) * | 2023-11-23 | 2024-01-12 | 江阴创可激光技术有限公司 | Laser processing device for emitting light of double lasers |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050111506A1 (en) * | 2003-11-25 | 2005-05-26 | Sharp Kabushiki Kaisha | Semiconductor laser element and manufacturing method for the same |
| CN101854030A (en) * | 2010-05-04 | 2010-10-06 | 长春德信光电技术有限公司 | Laser light source device of high-power semiconductor |
| CN101859025A (en) * | 2010-06-03 | 2010-10-13 | 中国科学院长春光学精密机械与物理研究所 | High-power semiconductor laser optical output module capable of being reused |
| CN110718848A (en) * | 2019-09-18 | 2020-01-21 | 深圳市星汉激光科技有限公司 | Semiconductor laser device |
-
2021
- 2021-03-05 CN CN202110243068.2A patent/CN112636158A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050111506A1 (en) * | 2003-11-25 | 2005-05-26 | Sharp Kabushiki Kaisha | Semiconductor laser element and manufacturing method for the same |
| CN101854030A (en) * | 2010-05-04 | 2010-10-06 | 长春德信光电技术有限公司 | Laser light source device of high-power semiconductor |
| CN101859025A (en) * | 2010-06-03 | 2010-10-13 | 中国科学院长春光学精密机械与物理研究所 | High-power semiconductor laser optical output module capable of being reused |
| CN110718848A (en) * | 2019-09-18 | 2020-01-21 | 深圳市星汉激光科技有限公司 | Semiconductor laser device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116169556A (en) * | 2023-04-21 | 2023-05-26 | 深圳市星汉激光科技股份有限公司 | Optical fiber coupling semiconductor laser with ladder design and welding equipment |
| CN117381212A (en) * | 2023-11-23 | 2024-01-12 | 江阴创可激光技术有限公司 | Laser processing device for emitting light of double lasers |
| CN117381212B (en) * | 2023-11-23 | 2024-05-10 | 江阴创可激光技术有限公司 | Laser processing device for emitting light of double lasers |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110718848A (en) | Semiconductor laser device | |
| EP3687008B1 (en) | Light source unit | |
| CN112636158A (en) | Semiconductor laser with double-layer optical path | |
| CN112600074B (en) | Small-size high-power semiconductor laser | |
| WO2021051469A1 (en) | Semiconductor laser | |
| CN115954761A (en) | Multi-single-tube semiconductor laser beam combining device | |
| CN210490075U (en) | Semiconductor laser device | |
| CN112886390A (en) | Multi-group symmetrical array high-power optical fiber coupling semiconductor laser packaging structure and method | |
| WO2021010488A1 (en) | Semiconductor laser module, light source unit, light source device, and optical fiber laser | |
| CN112909736A (en) | Semiconductor laser | |
| CN210490074U (en) | Semiconductor laser device | |
| CN213845835U (en) | Semiconductor laser with small volume and high power | |
| EP4411216A1 (en) | Laser light source device, and illumination system | |
| CN115494593B (en) | Light-weight optical fiber coupling laser | |
| CN210490083U (en) | Laser device | |
| CN214044341U (en) | Small-size semiconductor laser | |
| CN112103768B (en) | Semiconductor laser | |
| CN213845834U (en) | High-brightness and high-efficiency semiconductor laser | |
| CN112904503B (en) | Multichannel parallel transmission optical device and packaging structure thereof | |
| CN112787220A (en) | High-power semiconductor laser | |
| CN213520690U (en) | External cavity semiconductor laser | |
| CN114976876A (en) | Semiconductor laser of multi-chip package | |
| CN220753996U (en) | Multi-tail fiber output laser pumping source | |
| TWI528064B (en) | Lens and optical module using the same | |
| CN110556709A (en) | Laser device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210409 |