CN214044341U - Small-size semiconductor laser - Google Patents

Small-size semiconductor laser Download PDF

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Publication number
CN214044341U
CN214044341U CN202120223897.XU CN202120223897U CN214044341U CN 214044341 U CN214044341 U CN 214044341U CN 202120223897 U CN202120223897 U CN 202120223897U CN 214044341 U CN214044341 U CN 214044341U
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light
reflector
light emitting
laser
emitting module
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CN202120223897.XU
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Chinese (zh)
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周少丰
汤蒙
屈泽云
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Shenzhen Xinghan Laser Technology Co Ltd
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Shenzhen Xinghan Laser Technology Co Ltd
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Abstract

The utility model provides a small-volume semiconductor laser, which comprises a first light-emitting module, a second light-emitting module, a reflecting assembly, a focusing assembly and an output optical fiber; the first light-emitting module comprises a plurality of first light-emitting units, and the second light-emitting module comprises a plurality of second light-emitting units; the reflection assembly is arranged in the light emitting direction of the second light emitting module, the focusing assembly is arranged in the common light emitting direction of the reflection assembly and the first light emitting module, the light emitting height of the first light emitting module is higher than that of the second light emitting module and that of the reflection assembly, and each first light emitting unit in the first light emitting module and each second light emitting unit in the second light emitting module are sequentially and alternately arranged in an inserting mode. The utility model has the advantages that: the semiconductor laser that this application provided alternates two rows of laser chips in proper order and sets up in turn, and the required interval of reducible double laser chip overall arrangement reduces the whole size of laser.

Description

Small-size semiconductor laser
Technical Field
The utility model relates to a semiconductor laser technical field especially relates to a little volume semiconductor laser.
Background
The semiconductor laser is a device capable of emitting laser, laser is generated by a laser chip arranged in the semiconductor laser, but the power of the laser emitted by a single laser chip is limited, and the generated laser power cannot meet the actual requirement, so that the laser emitted by a plurality of laser chips is required to be polarized and combined by a polarization beam combiner, and the power of the laser can be ensured; the higher the power, the more the number of laser chips, and the more laser chips need a large space to be arranged, which leads to an oversized laser without reasonable and skillful layout. Therefore, how to control the volume of the laser within a certain range and ensure the power output requirement and the heat dissipation requirement of the laser is an important problem in the technical field of semiconductor lasers.
SUMMERY OF THE UTILITY MODEL
The utility model aims at solving the technical problem existing in the prior art, and providing a small-size semiconductor laser.
A small-volume semiconductor laser comprising: the device comprises a first light-emitting module, a second light-emitting module, a reflecting assembly, a focusing assembly and an output optical fiber; the first light emitting module comprises a plurality of first light emitting units, and the second light emitting module comprises a plurality of second light emitting units; the reflection assembly is arranged in the light emitting direction of the second light emitting module, the focusing assembly is arranged in the common light emitting direction of the reflection assembly and the first light emitting module, the light emitting height of the first light emitting module is higher than that of the second light emitting module and that of the reflection assembly, and each first light emitting unit in the first light emitting module and each second light emitting unit in the second light emitting module are sequentially and alternately arranged in an inserting mode.
Further, the light emitting directions of the first light emitting module and the second light emitting module are opposite or the same.
Further, the reflection assembly comprises a third reflector and a fourth reflector which are arranged in parallel, the second light-emitting unit comprises a second laser chip and a second reflector which is arranged on the light-emitting direction of the second laser chip, the third reflector is arranged on the light-emitting direction of the second reflector, the fourth reflector is arranged on the light-emitting direction of the focusing assembly and the light path between the first light-emitting modules, and laser emitted by the second laser chip is reflected to the third reflector through the second reflector and enters the focusing assembly after being continuously reflected by the third reflector and the fourth reflector.
Furthermore, the first light-emitting unit comprises a first laser chip and a first reflector arranged in the light-emitting direction of the first laser chip, and laser emitted by the first laser chip is reflected by the first reflector and then enters the focusing assembly by crossing the upper edge of the fourth reflector.
Further, the first laser chip is arranged between the second laser chip and the second reflector, and the second laser chip is arranged between the first laser chip and the first reflector.
Furthermore, the plurality of first light-emitting units in the first light-emitting module are sequentially arranged in a step shape, the step height of the first light-emitting unit which is closer to the focusing assembly is lower, and the step height of the first light-emitting unit which is farther from the focusing assembly is higher, so that light spots output by the light path where each first light-emitting unit is located cannot be overlapped with each other.
Furthermore, the plurality of second light-emitting units in the second light-emitting module are sequentially arranged in a step shape, the step height of the second light-emitting unit which is closer to the incident surface of the third reflector is lower, and the step height of the second light-emitting unit which is farther from the incident surface of the third reflector is higher, so that light spots output by light paths where the second light-emitting units are located are not overlapped with each other.
Further, the first light beam and the second light beam have the same wavelength and are at a preset first wavelength.
Furthermore, the focusing assembly comprises a filter, a fast-axis focusing lens and a slow-axis focusing lens, wherein the filter is arranged in the common light-emitting direction of the first reflector and the fourth reflector and is used for transmitting the laser with the first wavelength and filtering the laser with other wavelengths except the first wavelength; the fast axis focusing lens is arranged in the light emitting direction of the filter, and the slow axis focusing lens is arranged in the light emitting direction of the fast axis focusing lens.
The utility model provides a beneficial effect that technical scheme brought is: the semiconductor laser that this application provided alternates two rows of laser chips in proper order and sets up in turn, and the required interval of reducible double laser chip overall arrangement reduces the whole size of laser.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a top view of a small-sized semiconductor laser according to an embodiment of the present invention;
fig. 2 is a perspective view of a small-sized semiconductor laser according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
An embodiment of the utility model provides a little volume semiconductor laser. Referring to fig. 1 and fig. 2, fig. 1 is a top view of a small-sized semiconductor laser in an embodiment of the present invention, and fig. 2 is a perspective view of a small-sized semiconductor laser in an embodiment of the present invention, the laser includes: the device comprises a shell 6, a first light-emitting module 1, a second light-emitting module 2, a reflecting assembly 3, a focusing assembly 4 and an output optical fiber 5, wherein the first light-emitting module, the second light-emitting module 2, the reflecting assembly 3, the focusing assembly 4 and the output optical fiber 5 are packaged in the shell 6; the first light emitting module 1 includes a plurality of first light emitting units 11, and the second light emitting module 2 includes a plurality of second light emitting units 21; the reflection assembly 3 is arranged in the light emitting direction of the second light emitting module 2, the focusing assembly 4 is arranged in the common light emitting direction of the reflection assembly 3 and the first light emitting module 1, the light emitting height of the first light emitting module 1 is higher than the light emitting height of the second light emitting module 2 and the height of the reflection assembly 3, each first light emitting unit 11 in the first light emitting module 1 and each second light emitting unit 21 in the second light emitting module 2 are sequentially and alternately arranged in an inserting mode, and the light emitting directions of the first light emitting module 1 and the second light emitting module 2 are opposite or the same. As shown in fig. 1, in the present embodiment, the light emitting directions of the first light emitting module 1 and the second light emitting module 2 are opposite.
The first light beam emitted by the first light-emitting module 1 crosses over the reflection assembly 3 and enters the focusing assembly 4, the second light beam emitted by the second light-emitting module 2 is reflected to the focusing assembly 4 through the reflection assembly 3, and the focusing assembly 4 focuses the first light beam and the second light beam and then couples and outputs the first light beam and the second light beam to the output optical fiber 5.
The reflecting assembly 3 includes a third reflecting mirror 31 and a fourth reflecting mirror 32 which are arranged in parallel, the second light-emitting unit 21 includes a second laser chip 211, and a second fast axis collimating mirror 212, a second slow axis collimating mirror 213 and a second reflecting mirror 214 which are matched with the second laser chip 211, the third reflecting mirror 31 is arranged in the light-emitting direction of the second reflecting mirror 214, the fourth reflecting mirror 32 is arranged on the light path between the focusing assembly 4 and the first light-emitting module 1, and the laser emitted by the second laser chip 211 is converted into parallel laser beams through the second fast axis collimating mirror 212, the second slow axis collimating mirror 213 and the second reflecting mirror 214; the parallel laser beams generated by the second light emitting units 21 form a second light beam, and the second light beam is reflected to the fourth reflecting mirror 32 by the third reflecting mirror 31, and enters the focusing assembly 4 after being reflected by the fourth reflecting mirror 32.
The first light-emitting unit 11 includes a first laser chip 111, and a first fast axis collimator 112, a first slow axis collimator 113 and a first reflector 114 which are matched with the first laser chip 111, and the laser emitted by the first laser chip 111 is converted into parallel laser beams after passing through the first fast axis collimator 112, the first slow axis collimator 113 and the first reflector 114 in sequence; the parallel laser beams generated by the respective first light emitting units 11 constitute a first beam which enters the focusing assembly 4 beyond the upper edge of the fourth reflecting mirror 32.
In a preferred embodiment, the first laser chip 111 is disposed between the second laser chip 211 and the second reflector 214, and the second laser chip 211 is disposed between the first laser chip 111 and the first reflector 114, so as to shorten the distance required for the layout of the dual-row laser chips.
The plurality of first light-emitting units 11 in the first light-emitting module 1 are sequentially arranged in a step shape, the step height of the first light-emitting unit 11 closer to the focusing assembly 4 is lower, and the step height of the first light-emitting unit 11 farther from the focusing assembly 4 is higher, so that light spots output by a light path where each first light-emitting unit 11 is located are not overlapped together and can enter the focusing assembly 4. In a similar principle, the plurality of second light-emitting units 21 in the second light-emitting module 2 are sequentially arranged in a step shape, and the step height of the second light-emitting unit 21 closer to the incident surface of the third reflector 31 is lower, and the step height of the second light-emitting unit 21 farther from the incident surface of the third reflector 31 is higher, so that light spots output by the light path of each second light-emitting unit 21 can enter the third reflector 31 without being overlapped.
The first light beam and the second light beam have the same wavelength and are a preset first wavelength, in this embodiment, the first wavelength is 915 nm; the focusing assembly 4 comprises a filter 41, a fast-axis focusing lens 42 and a slow-axis focusing lens 43, wherein the filter 41 is arranged in the common light-emitting direction of the first reflector 114 and the fourth reflector 32, and is used for transmitting the laser with the first wavelength and filtering the laser with other wavelengths except the laser with the first wavelength so as to prevent the laser from being burnt out as the return light returns to the laser chip along the light path; fast axle focusing lens 42 sets up on the light-emitting direction of filter 41, be used for right first light beam with the second light beam is at the enterprising line focus of fast axle direction, slow axle focusing lens 43 sets up on fast axle focusing lens 42's the light-emitting direction, be used for right first light beam with the second light beam is at the enterprising line focus of slow axle direction.
The utility model has the advantages that: the semiconductor laser that this application provided alternates two rows of laser chips in proper order and sets up in turn, and the required interval of reducible double laser chip overall arrangement reduces the whole size of laser.
In the present disclosure, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may comprise direct contact between the first and second features, or may comprise direct contact between the first and second features through another feature not in direct contact. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It should be understood by those skilled in the art that the present invention is not limited by the above embodiments, and the description in the above embodiments and the description is only preferred examples of the present invention, and is not intended to limit the present invention, and that the present invention can have various changes and modifications without departing from the spirit and scope of the present invention, and these changes and modifications all fall into the scope of the claimed invention. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims (9)

1. A small-volume semiconductor laser comprising: the device comprises a first light-emitting module, a second light-emitting module, a reflecting assembly, a focusing assembly and an output optical fiber; the first light emitting module comprises a plurality of first light emitting units, and the second light emitting module comprises a plurality of second light emitting units; the method is characterized in that:
the reflection assembly is arranged in the light emitting direction of the second light emitting module, the focusing assembly is arranged in the common light emitting direction of the reflection assembly and the first light emitting module, the light emitting height of the first light emitting module is higher than that of the second light emitting module and that of the reflection assembly, and each first light emitting unit in the first light emitting module and each second light emitting unit in the second light emitting module are sequentially and alternately arranged in an inserting mode.
2. A small-volume semiconductor laser as claimed in claim 1 wherein: the light emitting directions of the first light emitting module and the second light emitting module are opposite or the same.
3. A small-volume semiconductor laser as claimed in claim 1 wherein: the reflection assembly comprises a third reflector and a fourth reflector which are arranged in parallel, the second light-emitting unit comprises a second laser chip and a second reflector which is arranged on the light-emitting direction of the second laser chip, the third reflector is arranged on the light-emitting direction of the second reflector, the fourth reflector is arranged on the light path between the focusing assembly and the first light-emitting module, and laser emitted by the second laser chip is reflected to the third reflector through the second reflector and enters the focusing assembly after being continuously reflected by the third reflector and the fourth reflector.
4. A small-volume semiconductor laser as claimed in claim 3 wherein: the first light-emitting unit comprises a first laser chip and a first reflector arranged in the light-emitting direction of the first laser chip, and laser emitted by the first laser chip passes through the upper edge of the fourth reflector after being reflected by the first reflector and enters the focusing assembly.
5. A small-volume semiconductor laser as claimed in claim 4 wherein: the first laser chip is arranged between the second laser chip and the second reflector, and the second laser chip is arranged between the first laser chip and the first reflector.
6. A small-volume semiconductor laser as claimed in claim 4 wherein: the plurality of first light-emitting units in the first light-emitting module are sequentially arranged in a step shape, the step height of the first light-emitting unit which is closer to the focusing assembly is lower, and the step height of the first light-emitting unit which is farther from the focusing assembly is higher, so that light spots output by the light path where the first light-emitting units are located cannot be overlapped.
7. A small-volume semiconductor laser as claimed in claim 4 wherein: the plurality of second light-emitting units in the second light-emitting module are sequentially arranged in a step shape, the step height of the second light-emitting unit which is closer to the incidence surface of the third reflector is lower, and the step height of the second light-emitting unit which is farther from the incidence surface of the third reflector is higher, so that light spots output by the light path where the second light-emitting units are located cannot be overlapped.
8. A small-volume semiconductor laser as claimed in claim 4 wherein: the first light beam and the second light beam have the same wavelength and are at a preset first wavelength.
9. A small-volume semiconductor laser as claimed in claim 8 wherein: the focusing assembly comprises a filter plate, a fast-axis focusing lens and a slow-axis focusing lens, and the filter plate is arranged in the common light-emitting direction of the first reflector and the fourth reflector and is used for transmitting the laser with the first wavelength and filtering the laser with other wavelengths except the laser with the first wavelength; the fast axis focusing lens is arranged in the light emitting direction of the filter, and the slow axis focusing lens is arranged in the light emitting direction of the fast axis focusing lens.
CN202120223897.XU 2021-01-26 2021-01-26 Small-size semiconductor laser Active CN214044341U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202120223897.XU CN214044341U (en) 2021-01-26 2021-01-26 Small-size semiconductor laser

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Application Number Priority Date Filing Date Title
CN202120223897.XU CN214044341U (en) 2021-01-26 2021-01-26 Small-size semiconductor laser

Publications (1)

Publication Number Publication Date
CN214044341U true CN214044341U (en) 2021-08-24

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117767101A (en) * 2024-02-20 2024-03-26 深圳市星汉激光科技股份有限公司 Small-size laser and laser equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117767101A (en) * 2024-02-20 2024-03-26 深圳市星汉激光科技股份有限公司 Small-size laser and laser equipment
CN117767101B (en) * 2024-02-20 2024-05-07 深圳市星汉激光科技股份有限公司 Small-size laser and laser equipment

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