WO2019128232A1

WO2019128232A1 - Spatial coupling structure for multiple to packaged semiconductor lasers

Info

Publication number: WO2019128232A1
Application number: PCT/CN2018/098551
Authority: WO
Inventors: 何晓光; 刘瑞; 张强; 陈晓华
Original assignee: 北京凯普林光电科技股份有限公司
Priority date: 2017-12-27
Filing date: 2018-08-03
Publication date: 2019-07-04
Also published as: CN108169854A

Abstract

A spatial coupling structure for multiple TO packaged semiconductor lasers (5). The spatial coupling structure comprises a base board (1). At least two steps are provided on the base board (1). A lower step (1-1) of the base board (1) is provided with an array of sunken mounting holes (3), in which respective rows of mounting holes (3) are communicated by means of electrode grooves (2). TO packaged semiconductor lasers (5) are provided within the mounting holes (3). An electrode circuit board (4) is provided within the electrode groove (2). Each row of the TO packaged semiconductor lasers (5) is connected in series by means of the electrode circuit board (4). The base board (1) forms a heat dissipation channel of the TO packaged semiconductor lasers (5). The base board (1) is further provided with a reflective mirror group and a focusing lens group. A light beam emitted by the TO packaged semiconductor lasers (5) is reflected by the reflective mirror group toward the focusing lens group, and the focusing lens group converges and outputs the light beam. The present invention has a small package volume, consistency between a TO heat diffusion direction and a direction of the heat dissipation channel, and high heat dissipation efficiency, thereby solving the technical issues of large-volume semiconductor lasers and poor heat dissipating structures in the prior art.

Description

Space coupling structure of multiple To package semiconductor lasers

Technical field

The present invention relates to the field of semiconductor laser technology, and in particular to a spatial coupling structure of a plurality of To package semiconductor lasers.

Background of the invention

Due to its small size, long life span and wide coverage wavelength range, semiconductor lasers have developed rapidly in recent years. As the optical output power of semiconductor lasers increases, the heat dissipation of the device becomes more difficult. For high-power Chips, the thermal power is large and the bottom area is small. In order to ensure good power stability of the constructed semiconductor laser components, an auxiliary heat sink is added to the Chip to improve the heat dissipation capability.

Common auxiliary heat sink forms are: C-mount (heat sink base), B-mount, ceramic heat sink, ToCan. Generally, the medium and high power Chips will use the first three modes of auxiliary heat dissipation. The wavelength of the Chip is mainly concentrated in the near infrared band. The Chip in this band range is stable in the air and is not easy to deliquesce. Visible light and ultraviolet Chips, due to their extremely deliquescent, must be used in the form of ToCan, a well-sealed auxiliary heat sink, to prevent the Chip from coming into contact with the air and avoiding Chip failure.

With a series of application requirements (tens of watts to hundreds of watts) for laser display, biomedical, laser plate making, and the increasing output power of visible and ultraviolet semiconductor lasers, a single ToCan package Chip can no longer meet the demand (single maximum 3w) ), and there are many difficulties in the current CoCo coupling of ToCan packaged.

The prior art provides a technical solution for fixing a plurality of To-package semiconductor lasers (Transistor-Outline, To, coaxial type) on a heat sink in a circular arrangement, which causes the output beam to be unable to fill the center of the ring. In part, the central part is not fully utilized, resulting in wasted space. The beam is coupled into the fiber. When the fiber is output, the far field is a dark spot in the center, which affects the uniformity of the spot. And as the number of package Chips increases, the volume increases faster, and the area of the center of the center where there is no beam filling is larger. The spatial coupling of multiple To packaged semiconductor lasers has a long heat dissipation channel, and the thermal diffusion direction and the heat dissipation channel are orthogonal, resulting in low heat dissipation efficiency and complicated package structure.

The prior art also provides a technical solution in which a To package semiconductor laser is disposed in both horizontal and vertical directions. In this technical solution, the thermal diffusion direction of the chip and the direction of the heat dissipation channel are also orthogonal, and the To package semiconductor laser is complicated to be installed. It is not easy to dissipate heat, and the light emitted by the To package semiconductor laser in the horizontal and vertical directions cannot be sufficiently mixed, resulting in the output being not white light, and the problem of colored spots and bands.

In summary, the prior art has some obvious common problems. First, the beam is not fully filled in space, there is space waste, and the optical fiber output has a dark band, which reduces the brightness of the fiber output. Second, the heat dissipation channel is too long, and the heat diffusion direction and the heat dissipation channel are orthogonal, resulting in low heat dissipation efficiency. Third, the package structure is complex, To package semiconductor laser fixed way, and optical components fixed way, the structure is complex and unfavorable to adjust and save costs.

At present, semiconductor lasers generally adopt a quantum well structure. In order to improve the beam quality of a semiconductor laser, the output beam can be shaped and then coupled out through a fiber. When coupled, a fast-axis collimating mirror and a slow-axis collimating mirror are used to collimate the fast and slow axes of the semiconductor laser, respectively, and then focus and couple into the optical fiber through the focusing mirror.

However, there are difficulties in packaging semiconductor lasers. First of all, the general To package semiconductor laser chip has a problem of deliquescence and cannot be exposed to the air. That is to say, there is no way to open the hat. If the conventional fast-axis collimating mirror and slow-axis collimating mirror are used for collimating and re-coupling the fast and slow axes of the To-package semiconductor laser respectively, the working distance of the fast-axis collimating mirror is required to be greater than 1.2 mm (chip light-emitting point to To Protecting the distance of the window), there is currently no such collimating lens on the market.

Summary of the invention

In view of the problems in the prior art, the present invention proposes a spatial coupling structure of a plurality of To package semiconductor lasers, which improves heat dissipation and beam coupling of the semiconductor laser.

In order to achieve the above object, the present invention adopts the following technical solutions:

A space coupling structure of a plurality of To package semiconductor lasers, comprising a bottom plate, wherein the bottom plate is provided with at least two steps;

An array of submerged mounting holes is disposed on the lower step of the bottom plate, and the mounting holes of each column are communicated through the electrode slots, wherein the mounting holes are provided with a To package semiconductor laser, and the electrode slots are provided with electrode circuit boards Each of the To package semiconductor lasers is connected in series through the electrode circuit board, and the bottom plate constitutes a heat dissipation channel of the To package semiconductor laser;

The bottom plate is further provided with a mirror group and a focusing lens group, and the light beam emitted by the To package semiconductor laser is reflected by the mirror group to the focusing lens group, and the focusing lens group concentrates the beam and outputs .

Optionally, a mirror mounting plate is disposed on the lower step of the bottom plate, the mirror mounting plate covers the To package semiconductor laser, and the mirror mounting plate is provided with a light transmission corresponding to the To package semiconductor laser. hole;

The mirror group includes a first type of mirror array and a second type of mirror array, and the first type of mirror array is disposed on a surface of the mirror mounting board, and a piece is disposed above each of the light transmission holes First type of mirror;

The second type of mirror array and the focusing lens group are disposed on a high step of the bottom plate.

Optionally, the surface of the mirror mounting plate is sloped or stepped, and the light beam emitted by the To package semiconductor laser is reflected by the first type of mirror array to the second type of mirror array. A second type of mirror array reflects the light beam to the focusing lens group, the focusing lens group concentrating the light beam and outputting the beam;

The first type of mirrors in the same column do not obscure the light beam reflected behind it, and the reflected light beams are parallel to each other with a predetermined height difference H.

Optionally, the optical axis of the To packaged semiconductor laser is vertically or obliquely distributed, and the optical axis spacing of the adjacent To packaged semiconductor lasers is A;

When the optical axis of the To packaged semiconductor laser is obliquely distributed, the upper surface and the lower surface of the mirror mounting plate, the upper surface of the low step, and the bottom surface of the mounting hole are parallel inclined planes, and the inclined plane The angle of inclination is M, M = arcsin (H / A).

Optionally, the first type of mirrors are disposed in parallel with each other, the upper edge of the first type of mirror is set to be chamfer less than or equal to 45 degrees, and the right edge of the second type of mirror is set to be less than or equal to 45 Degree of chamfering;

The second type of mirror array is divided into two sub-arrays, and the two sub-arrays are symmetrically arranged, and the second type of mirrors of the two sub-arrays are inclined by 45 degrees in different directions, at an angle of 90 degrees.

Optionally, the mirror mounting plate is a single piece or includes several pieces;

When the mirror mounting plate includes a plurality of blocks, it is disposed corresponding to the column of the mounting holes.

Optionally, the To package semiconductor laser is fixed in the mounting hole by bonding, or welding, or a threaded ring;

When the To package semiconductor laser is fixed in the mounting hole by a threaded pressing ring, the hole of the mounting hole is provided with an internal thread, and the threaded ring is provided with an external thread.

Optionally, the light emitting end of the To packaged semiconductor laser is provided with a collimating mirror, and the collimating mirror adopts a spherical mirror or an aspherical mirror.

Optionally, the focusing lens group comprises: a spherical mirror, or an aspherical mirror or two orthogonal discrete cylindrical mirrors.

Optionally, the To-package semiconductor lasers of adjacent columns are spaced apart from each other and distributed in different rows.

The space coupling structure of a plurality of To package semiconductor lasers adopting the above technical solution has the following advantages:

In the present invention, the To heat diffusion direction is consistent with the heat dissipation channel direction, and the heat dissipation efficiency is high.

In the present invention, the combination structure of the TO, the optical component and the bottom plate is compact, and the package volume is reduced.

The invention provides a pair of mirrors to arrange the light beams tightly between each other, thereby increasing the uniformity of the spot after the output of the optical fiber and improving the brightness of the output of the optical fiber.

The mounting method of the TO, the optical component and the bottom plate in the package structure of the invention is simple, convenient to adjust and save cost.

BRIEF DESCRIPTION OF THE DRAWINGS

1 is an exploded perspective view showing a spatial coupling structure of a tilted planar multi-package semiconductor laser according to Embodiment 1 of the present invention;

2 is a combination diagram of a spatial coupling structure of a plurality of To package semiconductor lasers of inclined plane type according to Embodiment 1 of the present invention;

3 is a cross-sectional view showing a spatial coupling structure of a slanted planar multi-package semiconductor laser according to Embodiment 1 of the present invention;

4 is a top plan view showing a spatial coupling structure of a plurality of To package semiconductor lasers of inclined plane type according to Embodiment 1 of the present invention;

FIG. 5 is a schematic diagram of a light beam reflected by a first mirror group according to Embodiment 1 of the present invention; FIG.

6 is a schematic diagram of a light beam reflected by a second mirror group provided in Embodiment 1 of the present invention;

7 is an exploded view showing a spatial coupling structure of a plurality of To-package semiconductor lasers of inclined plane type according to Embodiment 2 of the present invention;

8 is a combination diagram of a spatial coupling structure of a plurality of To-package semiconductor lasers of inclined plane type according to Embodiment 2 of the present invention;

9 is a cross-sectional view showing a spatial coupling structure of a plurality of To-package semiconductor lasers of inclined plane type according to Embodiment 2 of the present invention;

10 is a combination diagram of a spatial coupling structure of a plurality of To package semiconductor lasers of a tilt step type according to Embodiment 3 of the present invention;

11 is a cross-sectional view showing a spatial coupling structure of a plurality of To package semiconductor lasers of a tilt step type according to Embodiment 3 of the present invention.

In the figure: 1. bottom plate; 1-1. low step; 1-2. high step; 2. electrode slot; 3. mounting hole; 4. electrode circuit board; 5. To package semiconductor laser; 6. collimating mirror; 7. Mirror mounting plate; 8. light transmission hole; 9. first type of mirror; 10. second type of mirror; 11. cylindrical mirror; 12. cylindrical mirror; 13. optical fiber;

Mode for carrying out the invention

The embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

The invention is directed to the problem of poor heat dissipation of the semiconductor laser in the prior art. On the mounting bottom plate of the semiconductor laser, a sinking mounting hole is disposed, and the semiconductor laser is disposed in the mounting hole, and the heat emitted by the semiconductor laser can be directly radiated to the mounting hole. The wall of the hole and the vertical direction radiate to the bottom of the hole of the mounting hole, and then dissipate heat through the bottom plate, thereby improving the heat dissipation effect of the semiconductor laser package structure.

The different embodiments of the spatial coupling structure of a plurality of To packaged semiconductor lasers are described below by way of specific embodiments.

Example 1

As shown in FIG. 1 , FIG. 2 , FIG. 3 and FIG. 4 , in the embodiment, a spatial coupling structure of a plurality of To package semiconductor lasers includes a bottom plate 1 and a low bottom plate 1 is disposed. Step 1-1 and high step 1-2 two steps, according to actual product design needs, you can increase the number of steps, for example, the high step 1-2 is further set to multiple steps, this embodiment only illustrates the setting of two steps .

An array of sunken mounting holes 3 is disposed on the lower step 1-1 of the bottom plate 1. The mounting holes 3 of each row are communicated through the electrode slots 2, and the mounting holes 3 are provided with a To package semiconductor laser 5, which is disposed in the electrode slot 2. There is an electrode circuit board 4 (buried type), and each column of the To package semiconductor lasers 5 is connected in series through the electrode circuit board 4, and the bottom plate 1 constitutes a heat dissipation path of the To package semiconductor laser 5.

The To package semiconductor laser 5 is housed in the mounting hole 3, and the heat emitted by the To package semiconductor laser 5 can be directly radiated laterally to the hole wall of the mounting hole 3, and radiated to the bottom of the hole of the mounting hole 3 in a vertical direction, and then passed through the bottom plate. 1 heat dissipation improves the heat dissipation effect of the semiconductor laser package structure.

The bottom plate 1 is further provided with a mirror group and a focusing lens group. The light beam emitted by the To package semiconductor laser 5 is reflected by the mirror group to the focusing lens group, and the focusing lens group concentrates the beam and outputs it, and can be output to the optical fiber 13 and finally through the optical fiber. 13 is output to the outside.

A mirror mounting plate 7 is disposed on the lower step 1-1 of the bottom plate 1, and the mirror mounting plate 7 covers the To package semiconductor laser 5, and the mirror mounting plate 7 is provided with a light transmitting hole 8 corresponding to the To package semiconductor laser 5. The light beam emitted from the To package semiconductor laser 5 is emitted upward through the light transmission hole 8 to the mirror group.

As shown in FIG. 1 and FIG. 2, the mirror group includes an array of a first type of mirror 9 and an array of a second type of mirror 10. The first type of mirror 9 and the second type of mirror 10 each employ a plane mirror. An array of the first type of mirrors 9 is disposed on the upper surface of the mirror mounting plate 7, and a first type of mirror 9 is disposed above each of the light transmission holes 8.

An array of the second type of mirrors 10 and a focusing lens group are disposed on the high step 1-2 of the bottom plate 1. If the product design requires, the high step 1-2 is further arranged in multiple steps, and the array of the second type of mirror 10 and the focus lens group may be located on different steps.

As shown in FIG. 4, the array of the second type of mirror 10 is divided into two sub-arrays, the two sub-arrays are symmetrically arranged, and the second type of mirrors 10 of the two sub-arrays are tilted 45 degrees in different directions, and are clipped at 90 degrees. The angle reflects the light reflected from the first type of mirror 9 together.

The focusing lens group can adopt such a composition scheme, including: a spherical mirror, or an aspherical mirror, or two orthogonal discrete cylindrical mirrors. The spherical mirror here refers to a lens which can be characterized by a radius R, and the aspherical mirror refers to a lens which can be characterized by a radius Rn. In the optical field, a spherical mirror, an aspherical mirror, and a cylindrical mirror are three different types of lenses.

As shown in FIG. 3 and FIG. 4, two orthogonal discrete cylindrical mirrors 11, 12 and

cylindrical mirrors

11 and 12 are convex cylindrical mirrors, and the optical axes are perpendicular to each other, that is, one is vertically placed, and the other is vertical. Horizontally placed.

In order to prevent the first type of mirror 9 in the same column from blocking the light beam reflected from behind, the upper surface of the mirror mounting plate 7 is sloped, and the light beam emitted from the To package semiconductor laser 5 is reflected through the array of the first type of mirror 9 An array of the second type of mirrors 10, the array of the second type of mirrors 10 reflects the light beam to the focusing lens group, and the focusing lens group concentrates the light beams and outputs them.

As shown in FIGS. 3 and 5, the first type of mirror 9 in the same column does not block the light beam reflected rearward, and the reflected light beams are parallel to each other with a predetermined height difference H. The height difference H can be 400 μm.

In the present embodiment, the optical axis of the To-package semiconductor laser 5 is obliquely distributed, and the adjacent To-package semiconductor laser 5 has an optical axis pitch of A and an optical axis pitch of A of 10 mm.

As shown in FIG. 3, when the optical axis of the To package semiconductor laser 5 is obliquely distributed, the upper surface and the lower surface of the mirror mounting plate 7, the upper surface of the lower step 1-1, and the bottom surface of the mounting hole 3 are parallel inclined planes. The inclination angle of the inclined plane is M, M = arcsin (H / A).

Here, H is the height difference between the light beams 14 reflected by the first type of mirror 9, and A is the optical axis pitch of the semiconductor laser 5.

The first type of mirrors 9 are arranged parallel to each other, and the upper edge of the first type of mirror 9 is set to be chamfered by 45 degrees or less, so that the first type of mirror 9 in the same column does not block the beam reflected behind it. And the reflected beams are parallel to each other.

The right edge of part of the second type of mirror 10 is also set to a chamfer of less than or equal to 45 degrees, which ensures that the second type of mirror 10 in the same column does not block the beam reflected behind it, and the reflected beams are parallel to each other.

In this embodiment, the mirror mounting plate 7 is a plurality of elongated plates or a single plate.

When the mirror mounting plate 7 includes a plurality of blocks, it is disposed corresponding to the column of the mounting holes 3. Each of the column mounting holes 3 is covered with a mirror mounting plate 7, and the mirror mounting plates 7 are preferably closely arranged.

The To package semiconductor laser 5 is fixed in the mounting hole 3 by bonding, or soldering, or a threaded ring.

When the To package semiconductor laser 5 is fixed in the mounting hole 3 by a threaded pressing ring, the hole of the mounting hole 3 is provided with an internal thread, and the threaded ring is provided with an external thread.

The beam emitting end of the To package semiconductor laser 5 is provided with a collimating mirror 6, and the collimating mirror 6 is bonded and fixed to the cap of the To package semiconductor laser 5 by using a spherical mirror or an aspherical mirror.

As shown in FIG. 4, the adjacent columns of To-package semiconductor lasers 5 are spaced apart from each other and distributed in different rows, so that the design can further improve the heat dissipation effect of the To package semiconductor laser 5.

In the embodiment, the material of the bottom plate 1 is made of copper, which is favorable for heat conduction and heat dissipation. The lower step 1-1, the mounting hole 3, and the electrode slot 2 can be processed on the base plate 1 by a milling process.

The beam transmission path in the spatial coupling structure of a plurality of To package semiconductor lasers in this embodiment is as follows:

The light beam emitted by the To package semiconductor laser 5 is simultaneously collimated by the collimating mirror 6 on its fast and slow axis, and the collimated beam passes through the light transmitting hole 8 on the corresponding mirror mounting plate 7 to reach the light transmitting hole. The array of the first type of mirrors 9 above 8 is reflected by the array of the first type of mirrors 9, and the reflected parallel beams are merged into the array of the second type of mirrors 10, and the beams reflected by the array of the second type of mirrors 10 are again focused. The lens group is focused, and the focusing lens group concentrates the light beams and outputs them.

It should be noted that, due to the limitation of the interference between the size and the mounting structure of the To-package semiconductor laser 5, the light beams passing through the array of the first type of mirrors 9 of each column cannot be closely arranged, and there is a certain relationship between each column. The gap, as shown in FIG. 5, has a certain spacing between each column of light beams 14. In order to reduce the spacing between the two columns of beams 14, the beams reflected by the array of the first type of mirrors 9 are merged into the second type of reflections in parallel. In the array of mirrors 10, the beams reflected by the array of mirrors of the second type are parallel to each other, and there is almost no spacing between the beams 14 of each column. Therefore, an array of the second type of mirrors 10 is disposed after the array of the first type of mirrors 9. In the case that the light beams reflected by the second type of mirror 10 are not blocked from each other, the distance between the light beams is minimized, the dark gap between the light beams is eliminated, and the brightness of the light beam is improved.

Example 2

As shown in FIG. 7, FIG. 8, and FIG. 9, the second embodiment of the present invention is different from the first embodiment in that the upper surface of the mirror mounting plate 7 is sloped, and the mirror mounting plate 7 is under the mirror. The upper surface of the surface, the lower step 1-1, and the bottom surface of the mounting hole 3 are parallel horizontal planes.

The upper surface of the mirror mounting plate 7 is inclined at an angle M, M = arcsin (H / A).

Since the bottom surface of the mounting hole 3 is a horizontal plane, the optical axis of the To package semiconductor laser 5 is vertically distributed.

Other structures of the spatial coupling structure of the plurality of To-package semiconductor lasers in this embodiment are the same as those in Embodiment 1, and the description thereof will not be repeated here.

Example 3

10 and FIG. 11 show a third embodiment of the present invention. In the present embodiment, unlike the first embodiment, the upper surface of the mirror mounting plate 7 is stepped, and the lower surface of the mirror mounting plate 7 is low. The upper surface of the step 1-1 and the bottom surface of the mounting hole 3 are parallel horizontal planes.

The step height difference of the upper surface of the mirror mounting plate 7 is H, so that the height difference between the light beams 14 reflected by the first type of mirror 9 is also H.

The spatial coupling structure of a plurality of To packaged semiconductor lasers in the embodiments of the present invention has the following advantages:

The above is only the embodiment of the present invention, and other improvements or modifications may be made by those skilled in the art based on the above embodiments. It should be understood by those skilled in the art that the foregoing detailed description of the invention is intended to provide a better understanding of the scope of the invention.

Claims

A space coupling structure of a plurality of To packaged semiconductor lasers, comprising: a bottom plate, wherein the bottom plate is provided with at least two steps;

An array of submerged mounting holes is disposed on the lower step of the bottom plate, and the mounting holes of each column are communicated through the electrode slots, wherein the mounting holes are provided with a To package semiconductor laser, and the electrode slots are provided with electrode circuit boards Each of the To package semiconductor lasers is connected in series through the electrode circuit board, and the bottom plate constitutes a heat dissipation channel of the To package semiconductor laser;

The bottom plate is further provided with a mirror group and a focusing lens group, and the light beam emitted by the To package semiconductor laser is reflected by the mirror group to the focusing lens group, and the focusing lens group concentrates the beam and outputs .
The spatial coupling structure of a plurality of To packaged semiconductor lasers according to claim 1, wherein a mirror mounting plate is disposed on a lower step of the bottom plate, and the mirror mounting plate covers the To package semiconductor laser. The mirror mounting plate is provided with a light transmission hole corresponding to the To package semiconductor laser;

The mirror group includes a first type of mirror array and a second type of mirror array, and the first type of mirror array is disposed on a surface of the mirror mounting board, and a piece is disposed above each of the light transmission holes First type of mirror;

The second type of mirror array and the focusing lens group are disposed on a high step of the bottom plate.
The spatial coupling structure of a plurality of To packaged semiconductor lasers according to claim 2, wherein the surface of the mirror mounting plate is sloped or stepped, and the light beam emitted by the To package semiconductor laser passes through the first A type of mirror array is reflected to the second type of mirror array, the second type of mirror array reflects the light beam to the focusing lens group, and the focusing lens group concentrates the light beam and outputs the beam;

The first type of mirrors in the same column do not obscure the light beam reflected behind it, and the reflected light beams are parallel to each other with a predetermined height difference H.
The spatial coupling structure of a plurality of To packaged semiconductor lasers according to claim 3, wherein an optical axis of said To packaged semiconductor laser is vertically or obliquely distributed, and an optical axis spacing of said adjacent To packaged semiconductor lasers A;

When the optical axis of the To packaged semiconductor laser is obliquely distributed, the upper surface and the lower surface of the mirror mounting plate, the upper surface of the low step, and the bottom surface of the mounting hole are parallel inclined planes, and the inclined plane The angle of inclination is M, M = arcsin (H / A).
The spatial coupling structure of a plurality of To packaged semiconductor lasers according to claim 2, wherein said first type of mirrors are disposed in parallel with each other, and said upper edge of said first type of mirror is set to be less than or equal to 45 degrees. a chamfer, the right edge of the second type of mirror is set to a chamfer of less than or equal to 45 degrees;

The second type of mirror array is divided into two sub-arrays, and the two sub-arrays are symmetrically arranged, and the second type of mirrors of the two sub-arrays are inclined by 45 degrees in different directions, at an angle of 90 degrees.
The spatial coupling structure of a plurality of To packaged semiconductor lasers according to claim 2, wherein the mirror mounting plate is a single piece or comprises a plurality of blocks;

When the mirror mounting plate includes a plurality of blocks, it is disposed corresponding to the column of the mounting holes.
The spatial coupling structure of a plurality of To packaged semiconductor lasers according to claim 1, wherein the To packaged semiconductor laser is fixed in the mounting hole by bonding, or soldering, or a threaded ring;

When the To package semiconductor laser is fixed in the mounting hole by a threaded pressing ring, the hole of the mounting hole is provided with an internal thread, and the threaded ring is provided with an external thread.
The spatial coupling structure of a plurality of To packaged semiconductor lasers according to claim 1, wherein the light emitting end of the To packaged semiconductor laser is provided with a collimating mirror, and the collimating mirror is a spherical mirror or an aspherical mirror.
The spatial coupling structure of a plurality of To packaged semiconductor lasers according to claim 1, wherein said focusing lens group comprises: a spherical mirror, or an aspherical mirror or two orthogonal discrete cylindrical mirrors.
The space coupling structure of a plurality of To package semiconductor lasers according to claim 1, wherein the To package semiconductor lasers of adjacent columns are spaced apart from each other and distributed in different rows.