WO2021051469A1

WO2021051469A1 - Semiconductor laser

Info

Publication number: WO2021051469A1
Application number: PCT/CN2019/112282
Authority: WO
Inventors: 周少丰; 刘鹏; 陈丕新
Original assignee: 深圳市星汉激光科技股份有限公司
Priority date: 2019-09-18
Filing date: 2019-10-21
Publication date: 2021-03-25
Also published as: CN110718855A

Abstract

A semiconductor laser (100), belonging to the technical field of lasers. The semiconductor laser (100) comprises: a light beam coupling structure (20), the light beam coupling structure (20) comprising a phase retarder (22) and a polarization coupler (21), the polarization coupler (21) comprising a first incident direction (211) and a second incident direction (212), and the phase retarder (22) being located in the first incident direction (211); and at least two light emission units (10), each light emission unit (10) comprising a laser chip (11), a fast-axis collimating lens (12) and a slow-axis collimating lens (13), and emergent light beams of the laser chip (11) successively passing through the fast-axis collimating lens (12) and the slow-axis collimating lens (13) and entering the light beam coupling structure (20). Light beam shaping is performed on emergent light beams of the light emission units (10) in a fast-axis direction and a slow-axis direction respectively, and the at least two light emission units (10) enter the polarization coupler (21) in the first incident direction (211) and the second incident direction (212) respectively, thereby improving the quality of emergent light beams of the polarization coupler (21).

Description

A semiconductor laser

This application claims the priority of the Chinese patent application filed with the Chinese Patent Office on September 18, 2019, the application number is 2019108823546, and the invention title is "semiconductor laser", the entire content of which is incorporated into this application by reference.

Technical field

The embodiment of the present invention relates to the field of laser technology, in particular, to a semiconductor laser.

Background technique

With the advancement of science and technology, the market has higher and higher requirements for the power, beam quality and brightness of fiber-coupled semiconductor lasers. At present, multiple laser sources can be coupled to achieve the technical purpose of improving the beam brightness of semiconductor lasers.

However, coupling multiple numbers of laser sources will increase the volume of the overall device, and the unreasonable coupling arrangement of the laser sources will result in poor quality of the emitted beam, large spot area, and low energy density of the spot.

Summary of the invention

The embodiment of the present invention aims to provide a semiconductor laser, which can solve the technical problem that the coupling arrangement of multiple light sources in the prior art is unreasonable, resulting in poor quality of the emitted beam.

The embodiments of the present invention adopt the following technical solutions:

A semiconductor laser, including:

A light beam coupling structure, the light beam coupling structure includes a phase retarder and a polarization coupler, the polarization coupler includes a first incident direction and a second incident direction, and the phase retarder is located in the first incident direction;

At least two light-emitting units, the light-emitting unit comprising a laser chip, a fast-axis collimating lens and a slow-axis collimating lens, the emitted light beam of the laser chip passes through the fast-axis collimating lens and the slow-axis collimating lens in sequence , And incident to the beam coupling structure, wherein a part of the emitted light beam of the light emitting unit enters the polarization coupler along the first incident direction after passing through the phase retarder, and another part of the light emitting unit The outgoing light beam is incident on the polarization coupler along the second incident direction.

Optionally, the first incident direction and the second incident direction are respectively provided with the same number of emitted light beams of the light emitting unit.

Optionally, the semiconductor laser further includes a first reflector, and the light beam emitted by the laser chip passes through the fast-axis collimator lens and the slow-axis collimator lens in sequence, and is incident on the first reflector, After changing the direction of the light path, it is incident on the light beam coupling structure.

Optionally, the light output unit includes a beam combining mirror, a plurality of the laser chips, a plurality of the fast axis collimating lenses corresponding to the plurality of laser chips, and a plurality of slow axis collimators. Lens and a plurality of said first reflecting mirrors, the emitted light beam of each said laser chip passes through one said fast-axis collimating lens, one said slow-axis collimating lens and one said first reflecting mirror in turn, and is incident To the beam combining mirror, the emitted light beams of a plurality of the laser chips are combined on the beam combining mirror, and after changing the direction of the light path, they are incident on the beam coupling structure.

Optionally, the semiconductor laser further includes an output fiber, the beam coupling structure further includes a focusing lens, and the output beam of the polarization coupler is focused by the focusing lens and coupled to the input end of the output fiber.

Optionally, the semiconductor laser further includes a package base that fixedly couples and encapsulates the beam coupling structure, the at least two light emitting units, and the input end of the output fiber to form a package structure .

Optionally, the package base includes a base and a plurality of bosses, and the plurality of bosses are arranged on the base, and each of the first reflecting mirrors is correspondingly arranged on one of the bosses.

Optionally, a plurality of the bosses are distributed stepwise.

Optionally, one said boss is provided with one said laser chip, one fast-axis collimating lens, one slow-axis collimating lens and one first reflecting mirror.

Optionally, the positions between the fast-axis collimating lens and the slow-axis collimating lens are mutually adjustable.

Compared with the prior art, in the semiconductor laser of this embodiment, the polarization coupler includes a first incident direction and a second incident direction, the phase retarder is located in the first incident direction, and a part of the After passing through the phase retarder, the emitted light beam from the light emitting unit is incident on the polarization coupler along the first incident direction, and another part of the emitted light beam from the light emitting unit is incident on the polarization coupler along the second incident direction. Polarization coupler. That is, the output light beams of the light output unit are respectively subjected to beam shaping processing in the fast axis direction and the slow axis direction to make the output light beams of the light output unit closely arranged, and the output lights of at least two light output units are respectively along the The first incident direction and the second incident direction are incident on the polarization coupler, and the light beam is further polarized-coupled, thereby improving the quality of the output light beam of the polarization coupler, the energy density of the output light spot is high, and the light output effect is good .

Description of the drawings

One or more embodiments are exemplified by the pictures in the corresponding drawings. These exemplified descriptions do not constitute a limitation on the embodiments. The elements with the same reference numerals in the drawings are denoted as similar elements. Unless otherwise stated, the figures in the attached drawings do not constitute a scale limitation.

Fig. 1 is a schematic structural diagram of a semiconductor laser provided by one embodiment of the present invention;

2 is a schematic diagram of a light emitting unit provided by another embodiment of the present invention;

Fig. 3 is a perspective view of the light emitting unit shown in Fig. 1;

Fig. 4 is a view of the beam coupling structure shown in Fig. 1;

Fig. 5 is a light emitting effect diagram shown in Fig. 1.

detailed description

In order to facilitate the understanding of the present invention, the present invention will be described in more detail below with reference to the accompanying drawings and specific embodiments. It should be noted that when an element is expressed as being "fixed to" another element, it may be directly on the other element, or there may be one or more elements in between. When an element is said to be "connected" to another element, it can be directly connected to the other element, or there may be one or more intervening elements in between. The terms "upper", "lower", "inner", "outer", "vertical", "horizontal", etc. used in this specification indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance.

Unless otherwise defined, all technical and scientific terms used in this specification have the same meaning as commonly understood by those skilled in the technical field of the present invention. The terms used in the description of the present invention are only for the purpose of describing specific embodiments, and are not used to limit the present invention. The term "and/or" used in this specification includes any and all combinations of one or more related listed items.

In addition, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

Please refer to FIG. 1, an embodiment of the present invention provides a semiconductor laser 100. The semiconductor laser 100 includes at least two light emitting units 10, a beam coupling structure 20 and an output fiber 30. The light emitting unit 10 is used to emit a light beam, and the beam coupling structure 20 is used to couple the light beam and inject the light beam into the input end of the output fiber 30, and the output fiber 30 is used to guide the light beam And it emits, and the beam can be applied to the target object. In this embodiment, the semiconductor laser 100 further includes a packaging base 40, which fixedly couples and encapsulates at least two of the light emitting unit 10, the beam coupling structure 20, and the input end of the output fiber 30 Integral to form a package body structure.

At least two of the light emitting units 10 are arranged side by side, and the emitted light between the at least two light emitting units 10 does not interfere with each other. For example, two different incident directions of the light beam coupling structure 20 are respectively provided with the same number of output light beams of the light output unit 10. In this embodiment, taking the four light-emitting units 10 as an example, two light-emitting units 10 are respectively provided in two different incident directions of the light beam coupling structure 20, and are located at the side of the light beam coupling structure 20. The two light emitting units 10 in the same incident direction are arranged side by side, and the emitted lights between the two light emitting units 10 do not interfere with each other. Optionally, in terms of spatial layout, two light-emitting units 10 are respectively provided on opposite sides of the light beam coupling structure 20, and the two light-emitting units 10 located on the same side of the light beam coupling structure 20 They are arranged side by side, that is, the four light emitting units 10 are distributed in a rectangular shape.

Please refer to FIG. 2. In other embodiments, three light emitting units 10 are provided in the same incident direction of the beam coupling structure 20. It is understandable that, based on actual requirements, those skilled in the art can set the light emitting unit 10 to be more than one, not limited to the number shown in FIGS. 1 and 2.

Please refer to FIGS. 1 and 3 together. The light emitting unit 10 includes a laser chip 11, a fast axis collimating lens 12 and a slow axis collimating lens 13. The laser chip 11 is used to be excited to emit a laser beam when it is in an electrical conduction state. The light beam emitted by the laser chip 11 passes through the fast-axis collimating lens 12 and the slow-axis collimating lens 13 in sequence, and enters the beam coupling structure 20. It is understandable that the positions between the fast-axis collimating lens 12 and the slow-axis collimating lens 13 are interchangeable, for example, the light beam emitted by the laser chip 11 passes through the slow-axis collimating lens in sequence 13 and the fast-axis collimating lens 12, and are incident on the beam coupling structure 20. In this embodiment, the emitted light beam of the laser chip 11 passes through the fast-axis collimator lens 12 and the slow-axis collimator lens 13, respectively, for beam shaping processing. The function of the fast-axis collimator lens 12 is Part of the light energy in the beam is concentrated in the fast axis direction, and another part of the light energy in the beam is concentrated in the slow axis direction under the action of the slow-axis collimating lens 13, so that the energy of the beam is spatially The layout is closer.

Specifically, the light emitting unit 10 further includes a first reflecting mirror 14. In this embodiment, the light beam emitted by the laser chip 11 passes through the fast-axis collimator lens 12 and the slow-axis collimator lens 13 in sequence, and is incident on the first mirror 14, where it is reflected Under the action of the mirror 14, the direction of the light path is changed and incident on the light beam coupling structure 20.

In this embodiment, the light emitting unit 10 includes a beam combining mirror 15, a plurality of the laser chips 11, and a plurality of the fast axis collimating lenses 12 corresponding to the plurality of laser chips 11, respectively. , A plurality of slow-axis collimating lenses 13 and a plurality of the first reflecting mirrors 14, that is, each of the laser chips 11 corresponds to a fast-axis collimating lens 12, a slow-axis collimating lens 13, and One of the first reflecting mirror 14 forms an optical path structure, and the emitted light beam of each of the laser chips 11 sequentially passes through one of the fast-axis collimating lens 12, one of the slow-axis collimating lens 13, and one of the The first mirror 14 is incident on the beam combining mirror 15. The emitted light beams of the multiple laser chips 11 are combined on the beam combining mirror 15 and the direction of the light path is changed to be incident on the light beam coupling structure 20.

It is understandable that a person skilled in the art can set the laser chip 11 with a fixed value in the light emitting unit 10 according to actual needs, and the light beam emitted by the laser chip 11 with a fixed value is used as a light source to be incident on The beam coupling structure 20.

As shown in FIG. 3, the package base 40 includes a substrate 42 and a plurality of bosses 41. A plurality of the bosses 41 are disposed on the substrate 42. The plurality of bosses 41 are distributed in a stepped manner. The base 42 is used to support and fix a plurality of the bosses 41. Optionally, a plurality of the bosses 41 are arranged along a straight line and distributed in a stepped shape; the plurality of bosses 41 and the base 42 are integrally formed and arranged. The beam combining mirror 15 is disposed on the base, and is used for receiving and reflecting a plurality of light beams respectively reflected by the plurality of first mirrors 14. Each of the first mirrors 14 is correspondingly disposed on one of the bosses 41, so that the multiple light beams reflected by the multiple first mirrors 14 do not interfere with each other, and the multiple light beams pass through After changing the direction of the light path, it is incident on the beam combining mirror 15. Optionally, one boss 41 is provided with one laser chip 11, one fast-axis collimating lens 12, one slow-axis collimating lens 13 and one first reflecting mirror 14.

Please refer to FIGS. 1 and 4 together. The beam coupling structure 20 includes a polarization coupler 21, a phase retarder 22, a second mirror 23, and a focusing lens 24. The polarization coupler 21 includes a first incident direction 211 and a first incident direction 211. Two incident directions 212, wherein the directions of the first incident direction 211 and the second incident direction 212 are different. The phase retarder 22 is located in the first incident direction 211, the second mirror 23 is located in the second incident direction 212, and the focusing lens 24 is located in the exit direction of the polarization coupler 21. Optionally, the phase retarder 22 is a half-wave plate.

At least two of the output light beams of the light output unit 10 are incident on the beam coupling structure 20, and a part of the output light beams of the light output unit 10 are incident on the phase retarder 22 along the first incident direction 211. In the polarization coupler 21, another part of the emitted light beam of the light output unit 10 changes the optical path direction by the second reflector 23, and then enters the polarization coupler 21 along the second incident direction 212. The light beam is coupled and incident to the focusing lens 24 under the polarization coupling effect of the polarization coupler 21, and the light beam after being focused by the focusing lens 24 is coupled and incident to the input end of the output fiber 30, thereby forming a completed optical path system.

In this embodiment, after the exit light beams of the two light exit units 10 enter the phase retarder 22, they enter the polarization coupler 21 along the first incident direction 211, and the other two light exit units After changing the direction of the light path by the second reflecting mirror 23, the outgoing light beam 10 enters the polarization coupler 21 along the second incident direction 212. Please refer to FIG. 5. FIG. 5 is a light-emitting effect diagram of the semiconductor laser 100, which shows a light spot 50 emitted by the focusing lens 24. The light spot 50 is correspondingly divided into a first area 51 and a second area 52, wherein the first area 51 and the second area 52 respectively correspond to light beams in two different incident directions of the polarization coupler 21 That is, taking the first region 51 as an example, the emitted light beams of the two light emitting units 10 are incident on the phase retarder 22, and then enter the polarization coupler along the first incident direction 211 21. After the light beam is coupled by the polarization coupler 21, it is focused by the focusing lens, thereby forming a polarized light beam 511 in the diagram of the light spot 50.

In this embodiment, the two different incident directions (the first incident direction 211 and the second incident direction 212) of the polarization coupler 21 are respectively provided with the same number of the light emitting units 10, and the light emitting units 10 The light beam emitted by the unit 10 is incident on the polarization coupler 21 under the beam shaping process of the fast-axis collimator lens 12 and the slow-axis collimator lens 13, and under the action of the polarization coupler 21, the polarization is coupled, Outgoing polarized light beam 511, the energy of the light beam is more tightly distributed in the fast axis direction and the slow axis direction, that is, the outgoing lights of the multiple laser chips 11 are arranged tightly, so that the polarized light beam 511 is arranged tightly in all directions The technical effect of the area of the light spot 50 makes the energy density of the light spot 50 high.

In summary, the technical solution of this application includes but is not limited to the following advantages:

In the semiconductor laser 100 of this embodiment, the polarization coupler 21 includes a first incident direction 211 and a second incident direction 212, the phase retarder 22 is located in the first incident direction 211, and a part of the light-emitting After passing through the phase retarder 22, the emitted light beam of the unit 10 enters the polarization coupler 21 along the first incident direction 211, and another part of the emitted light beam of the light emitting unit 10 enters the second incident direction 212 To the polarization coupler 21. That is, the output light beams of the light output unit 10 are respectively subjected to beam shaping processing in the fast axis direction and the slow axis direction so that the output light beams of the light output unit 10 are closely arranged, and the output lights of at least two light output units are respectively arranged. The light is incident to the polarization coupler 21 along the first incident direction 211 and the second incident direction 212, and the light beam is further polarized coupled, thereby improving the quality of the output light beam of the polarization coupler 21, and the output light spot 50 The energy density is high, and the light output effect is good.

Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, not to limit them; under the idea of the present invention, the technical features of the above embodiments or different embodiments can also be combined. The steps can be implemented in any order, and there are many other variations of the different aspects of the present invention as described above. For the sake of brevity, they are not provided in the details; although the present invention has been described in detail with reference to the foregoing embodiments, it is common in the art The skilled person should understand that: they can still modify the technical solutions recorded in the foregoing embodiments, or equivalently replace some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the implementations of the present invention. Examples of the scope of technical solutions.

Claims

A semiconductor laser, characterized in that it comprises:

A light beam coupling structure, the light beam coupling structure includes a phase retarder and a polarization coupler, the polarization coupler includes a first incident direction and a second incident direction, and the phase retarder is located in the first incident direction;

At least two light-emitting units, the light-emitting unit comprising a laser chip, a fast-axis collimating lens and a slow-axis collimating lens, the emitted light beam of the laser chip passes through the fast-axis collimating lens and the slow-axis collimating lens in sequence , And incident to the beam coupling structure, wherein a part of the emitted light beam of the light emitting unit enters the polarization coupler along the first incident direction after passing through the phase retarder, and another part of the light emitting unit The outgoing light beam is incident on the polarization coupler along the second incident direction.
4. The semiconductor laser according to claim 1, wherein the first incident direction and the second incident direction are respectively provided with the same number of emitted light beams of the light emitting unit.
The semiconductor laser according to claim 1, wherein the semiconductor laser further comprises a first mirror, and the light beam emitted by the laser chip passes through the fast-axis collimating lens and the slow-axis collimating lens in sequence, It is incident on the first reflecting mirror, and after changing the direction of the light path, it is incident on the beam coupling structure.
The semiconductor laser according to claim 3, wherein the light emitting unit includes a beam combining mirror, a plurality of the laser chips, and a plurality of the fast axis corresponding to the plurality of laser chips respectively. A collimating lens, a plurality of slow-axis collimating lenses, and a plurality of the first reflecting mirrors, the emitted light beam of each laser chip passes through one of the fast-axis collimating lens, one of the slow-axis collimating lens, and One of the first mirrors is incident on the beam combining mirror, wherein the emitted light beams of a plurality of the laser chips are combined on the beam combining mirror, and after changing the direction of the light path, they are incident on the beam coupling structure .
The semiconductor laser according to claim 4, wherein the semiconductor laser further comprises an output fiber, the beam coupling structure further comprises a focusing lens, and the output beam of the polarization coupler is focused by the focusing lens and coupled Incident to the input end of the output fiber.
The semiconductor laser according to claim 5, wherein the semiconductor laser further comprises a packaging base that fixes the beam coupling structure, the at least two light-emitting units, and the input end of the output fiber The coupling and packaging are integrated to form a package body structure.
7. The semiconductor laser according to claim 6, wherein the package substrate comprises a substrate and a plurality of bosses, the plurality of bosses are disposed on the substrate, and each of the first mirrors is correspondingly disposed on the substrate. One said boss.
7. The semiconductor laser according to claim 7, wherein a plurality of the bosses are distributed in a stepped manner.
7. The semiconductor laser according to claim 7, wherein one said boss is provided with one said laser chip, one fast-axis collimating lens, one slow-axis collimating lens and one first mirror.
The semiconductor laser according to claim 1, wherein the positions between the fast-axis collimating lens and the slow-axis collimating lens are mutually adjustable.