CN112134142B - Manufacturing method of semiconductor structure, semiconductor structure and semiconductor device - Google Patents

Manufacturing method of semiconductor structure, semiconductor structure and semiconductor device Download PDF

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Publication number
CN112134142B
CN112134142B CN202011330399.1A CN202011330399A CN112134142B CN 112134142 B CN112134142 B CN 112134142B CN 202011330399 A CN202011330399 A CN 202011330399A CN 112134142 B CN112134142 B CN 112134142B
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light
resonant cavity
transmitting end
optical film
preset thickness
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CN112134142A (en
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杨国文
刘育衔
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Dugen Laser Technology Suzhou Co Ltd
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Dugen Laser Technology Suzhou Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The application provides a manufacturing method of a semiconductor structure, the semiconductor structure and a semiconductor device, and relates to the technical field of semiconductors. The semiconductor structure comprises a chip body and a plurality of resonant cavity structures, wherein each resonant cavity structure comprises a first reflector and a second reflector which are respectively arranged on two light-transmitting end surfaces, the reflectivity of the first reflector is greater than that of the second reflector, and an output window of the resonant cavity structure is formed on the second reflector; in any two adjacent resonant cavity structures, the output windows are respectively positioned on the two light-transmitting end faces. The manufacturing method of the semiconductor structure comprises the following steps: obtaining a chip body; the first light-transmitting end face and the second light-transmitting end face are coated with films to form a first reflector and a second reflector, so that the semiconductor structure manufactured by the application has a plurality of resonant cavity structures, light is emitted from different sides of the two adjacent resonant cavity structures, bidirectional lasing can be achieved on a single semiconductor structure, and the light-emitting power is high.

Description

Manufacturing method of semiconductor structure, semiconductor structure and semiconductor device
Technical Field
The application relates to the technical field of semiconductors, in particular to a manufacturing method of a semiconductor structure, the semiconductor structure and a semiconductor device.
Background
In the prior art, the semiconductor structure generally emits light from one side, and when the semiconductor structure emitting light from one side is used for beam combination to achieve higher power, a plurality of semiconductor structures are needed, so that the cost is higher, and the volume is larger.
Disclosure of Invention
An object of the embodiments of the present application is to provide a method for manufacturing a semiconductor structure, and a semiconductor device, which can realize bidirectional lasing on a single semiconductor structure.
In a first aspect, an embodiment of the present invention provides a semiconductor structure, including a chip body and a plurality of resonant cavity structures, where the chip body has two light-transmitting end faces; the plurality of resonant cavity structures are arranged on the chip body. Each resonant cavity structure comprises a first reflecting mirror and a second reflecting mirror which are respectively arranged on the two light-transmitting end surfaces, wherein the reflectivity of the first reflecting mirror is greater than that of the second reflecting mirror, so that an output window of the resonant cavity structure is formed on the second reflecting mirror; in any two adjacent resonant cavity structures, the output windows are respectively located on the two light-transmitting end faces.
In one embodiment, the first mirror and the second mirror are disposed in parallel to each other, so that the resonant cavity structure is a parallel plane cavity structure.
In one embodiment, the reflectivity of the first reflector is 92% to 100%; the reflectivity of the second reflector is 0.5% -1.5%.
In one embodiment, the second mirror is a single film structure.
In one embodiment, the first reflector comprises a first thin film layer, a second thin film layer and a third thin film layer which are stacked; wherein, the first thin film layer is contacted with the light-transmitting end face.
In one embodiment, the thickness of the first thin film layer is equal to the thickness of the second thin film layer, and the thickness of the second thin film layer is smaller than the thickness of the third thin film layer.
In one embodiment, the material of the second mirror, the material of the first thin film layer, and the material of the second thin film layer are the same, and are all Si3N4。
In a second aspect, an embodiment of the present invention provides a semiconductor device, which includes a base and a plurality of semiconductor structures, where the plurality of semiconductor structures are disposed on the base and distributed in a linear array, and the semiconductor structures are the above semiconductor structures.
In a third aspect, an embodiment of the present invention provides a method for manufacturing a semiconductor structure, for manufacturing the semiconductor structure described above, where the method for manufacturing the semiconductor structure includes:
obtaining a chip body;
and coating films on the two light-transmitting end surfaces to form the first reflecting mirror and the second reflecting mirror.
In an embodiment, the two light-passing end faces are a first light-passing end face and a second light-passing end face respectively.
In an embodiment, the plating on the first light-transmitting end surface and the second light-transmitting end surface to form the first reflecting mirror and the second reflecting mirror includes:
plating a first optical film with a first preset thickness on the first light-transmitting end face and the second light-transmitting end face;
sequentially plating a second optical film with a second preset thickness and a third optical film with a third preset thickness on a first preset position of the first optical film on the first light-transmitting end face;
and sequentially plating a fourth optical film with a fourth preset thickness and a fifth optical film with a fifth preset thickness on a second preset position of the first optical film on the second light-passing end face.
In an embodiment, after the second optical film with a second preset thickness and the third optical film with a third preset thickness are sequentially plated at a first preset position of the first optical film on the first light-passing end surface, and before the fourth optical film with a fourth preset thickness and the fifth optical film with a fifth preset thickness are sequentially plated at a second preset position of the first optical film on the second light-passing end surface, the method includes:
and rotating the chip body in a plane.
Compared with the prior art, the beneficial effect of this application is:
the semiconductor structure of this application has a plurality of resonant cavity structures, and makes two adjacent resonant cavity structures different sides light-emitting to can realize two-way lasing on single semiconductor structure, luminous power is high.
The semiconductor device is formed by packaging and bundling a plurality of dual-emission semiconductor structures emitting light in two directions, the number of the semiconductor structures can be reduced under the condition of reaching the same power, the volume and the whole weight are reduced, the total cost of packaging is reduced, and meanwhile, the required labor force in the whole packaging process is also reduced.
The manufacturing method of the semiconductor structure is used for manufacturing the bidirectional lasing semiconductor structure, and the resonant cavity structure is manufactured by adopting a film coating process, so that the manufacturing is simple and the precision is high.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments of the present application will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and that those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of a semiconductor structure according to an embodiment of the present application.
Fig. 2 is a schematic structural diagram of a semiconductor device according to an embodiment of the present application.
Fig. 3 is a schematic structural diagram of a semiconductor structure according to an embodiment of the present application.
Fig. 4 is a schematic structural diagram of a semiconductor structure according to an embodiment of the present application.
Fig. 5 is a schematic structural diagram of a semiconductor structure according to an embodiment of the present application.
Fig. 6 is a schematic structural diagram of a semiconductor device according to an embodiment of the present application.
Fig. 7 is a flowchart illustrating a method for fabricating a semiconductor structure according to an embodiment of the present disclosure.
Fig. 8 is a flowchart illustrating a method for fabricating a semiconductor structure according to an embodiment of the present disclosure.
Fig. 9 is a schematic step diagram illustrating a method for fabricating a semiconductor structure according to an embodiment of the present application.
Fig. 10 is a flowchart illustrating a method for fabricating a semiconductor structure according to an embodiment of the present disclosure.
Icon: 100-a semiconductor device; 110-a base; 120-a semiconductor structure; 200-a chip body; 210-a light-passing end face; 211-a first light-passing end face; 212-a second light-passing end face; 220-a light emitting structure; 300-a resonant cavity structure; 310-a first mirror; 311-a first thin film layer; 312-a second thin film layer; 313-a third thin film layer; 301-a first resonant cavity structure; 302-a second resonant cavity structure; 320-a second mirror; w-output window; 501-a first optical film; 502-a second optical film; 503-a third optical film; 504-a fourth optical film; 505-a fifth optical film; 600-mask.
Detailed Description
The terms "first," "second," "third," and the like are used for descriptive purposes only and not for purposes of indicating or implying relative importance, and do not denote any order or order.
Furthermore, the terms "horizontal", "vertical", "overhang" and the like do not imply that the components are required to be absolutely horizontal or overhang, but may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present application, it should be noted that the terms "inside", "outside", "left", "right", "upper", "lower", and the like indicate orientations or positional relationships based on orientations or positional relationships shown in the drawings or orientations or positional relationships that are conventionally arranged when products of the application are used, and are used only for convenience in describing the application and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the application.
In the description of the present application, unless expressly stated or limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements.
The technical solution of the present application will be clearly and completely described below with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a semiconductor structure 120 according to an embodiment of the present application. The semiconductor structure 120 includes a chip body 200 and a resonator structure 300, the chip body 200 has two light-passing end surfaces 210, and the resonator structure 300 includes a first mirror 310 and a second mirror 320 respectively disposed on the two light-passing end surfaces 210. The first mirror 310 is a high mirror (HR) and the second mirror 320 is a low mirror (AR). The semiconductor structure 120 of the present embodiment facilitates coupling of the optical beam into the optical fiber.
Here, the light-passing end face refers to an end face of the semiconductor structure 120 that is finally used for passing light. For example, if the semiconductor structure 120 itself is a cube, six faces can all leak light, and only two faces can leak light after being shielded by a plating film, a housing, a foreign object, or the like, the two faces that can leak light are referred to as two light-passing end faces of the semiconductor structure 120.
Fig. 2 is a schematic structural diagram of a semiconductor device 100 according to an embodiment of the present disclosure. The semiconductor device 100 includes a base 110 and a plurality of semiconductor structures 120, wherein the semiconductor structures 120 are the semiconductor structures 120 shown in the embodiment of fig. 1, and the plurality of semiconductor structures 120 are disposed on the base 110 and distributed in a bidirectional linear array.
In this embodiment, the semiconductor structure 120 has two rows and four columns, and the output laser direction (output) of the packaged semiconductor device 100 is L1.
Fig. 3 is a schematic structural diagram of a semiconductor structure 120 according to an embodiment of the present application. The semiconductor structure 120 includes a chip body 200 and a plurality of resonant cavity structures 300, the chip body 200 has two light-passing end faces 210; a plurality of resonator structures 300 are disposed on the chip body 200.
In one semiconductor structure 120, the cavity structure 300 may have 2, 3, and 4 ‧ ‧ ‧ ‧ ‧ ‧, and each cavity structure 300 includes a first mirror 310 and a second mirror 320 respectively disposed on the two light-passing end surfaces 210, and the reflectivity of the first mirror 310 is greater than that of the second mirror 320, so as to form an output window W of the cavity structure 300 at the second mirror 320. In any two adjacent resonator structures 300, wherein said first mirror 310 in one of said resonator structures 300 is on the same side as said second mirror 320 in the other of said resonator structures 300, and wherein said second mirror 320 in one of said resonator structures 300 is on the same side as said first mirror 310 in the other of said resonator structures 300, such that the output windows W are on different sides. In any two adjacent resonator structures 300, the output windows W are respectively located on the two light-transmitting end faces 210.
In this embodiment, the first mirror 310 and the second mirror 320 are disposed in parallel to each other, so that the resonant cavity structure 300 is a parallel plane cavity structure.
The semiconductor structure 120 of the present embodiment has a plurality of resonant cavity structures 300, and light is emitted from different sides of two adjacent resonant cavity structures 300, so that bidirectional lasing can be achieved on a single semiconductor structure 120, and the light-emitting power is high.
In this embodiment, the output windows W of any two adjacent resonator structures 300 are located at different sides, that is, two opposite-direction bilateral light-emitting in the chip body 200 is realized, so that each light-emitting light can have a light path to perform laser beam combination, thereby avoiding that laser beam combination cannot be performed due to the light-emitting light emitted from the same side of the two adjacent resonator structures 300.
Fig. 4 is a schematic structural diagram of a semiconductor structure 120 according to an embodiment of the present application. The semiconductor structure 120 of the present embodiment is a wide-stripe high-power semiconductor structure 120.
The laser gain medium in the chip body 200 may be a medium such as a semiconductor. The semiconductor structure 120 of the present embodiment can be applied to a semiconductor laser.
One or more light emitting structures 220 may be disposed in the chip body 200. One light emitting structure 220 corresponds to one or more resonant cavity structures 300.
In this embodiment, one light emitting structure 220 corresponds to one resonant cavity structure 300, the number of the light emitting structures 220 corresponds to the number of the resonant cavity structures 300, two light emitting structures are provided, and the light emitting structures 220 are semiconductor active regions. Therefore, the present embodiment realizes double-sided light emission in opposite directions of the two light emitting structures 220 in the chip body 200, that is, double-sided light emission in opposite directions of the two current injection windows (resonant cavities) is realized on the same epitaxial layer.
The two light-transmitting end faces 210 are a first light-transmitting end face 211 and a second light-transmitting end face 212, respectively. The first light-passing end face 211 and the second light-passing end face 212 are parallel to each other, wherein the first light-passing end face 211 is located above the second light-passing end face 212.
In this embodiment, there are two resonant cavity structures 300, and the two resonant cavity structures 300 are a first resonant cavity structure 301 and a second resonant cavity structure 302, respectively.
In the first cavity structure 301, the first mirror 310 is located on the first light-passing end surface 211, and the second mirror 320 is located on the second light-passing end surface 212; the output window W is located at the second light-transmitting end surface 212 and faces downward.
In the second cavity structure 302, the first mirror 310 is located on the second light-passing end surface 212, and the second mirror 320 is located on the first light-passing end surface 211; the output window W is located on the first light-transmitting end surface 211 and faces upward.
Therefore, in contrast to the embodiment shown in fig. 1, the chip can provide twice the output power at twice the injected current (or voltage, depending on the device operating conditions) by arranging the first mirror 310 and the second mirror 320.
When the embodiment shown in fig. 4 and the embodiment shown in fig. 1 are packaged into a CoS device, the number of semiconductor structures 120 required is reduced by half and the volume and the overall weight are reduced under the same power, so that the total cost of CoS (crystalline oxide on semiconductor) packaging can be reduced by about 50%, and the labor required in the whole packaging process is also reduced. In the case of using the same number of semiconductor structures 120, the CoS device packaged by using the semiconductor structure 120 of the present embodiment can achieve twice the light output power.
Fig. 5 is a schematic structural diagram of a semiconductor structure 120 according to an embodiment of the present application. In each cavity structure 300, the second mirror 320 is a single film layer structure. The first reflector 310 comprises a first thin film layer 311, a second thin film layer 312 and a third thin film layer 313 which are sequentially stacked from bottom to top; the first thin-film layer 311 is in contact with the light-transmitting end face 210 (the first light-transmitting end face 211 or the second light-transmitting end face 212). In one embodiment, the first mirror 310 is a bragg mirror. In this embodiment, the first thin film layer 311 and the second reflective mirror 320 may be integrated or formed separately.
The material of the second mirror 320, the material of the first thin film layer 311, and the material of the second thin film layer 312 may be the same as Si3N4. The material of the third thin film layer 313 has a refractive index different from that of the material of the first thin film layer 311, and the third thin film layer 313 is a high-reflective film.
The thickness of the first thin film layer 311 is equal to the thickness of the second thin film layer 312, and the thickness of the second thin film layer 312 is smaller than the thickness of the third thin film layer 313.
In this embodiment, the thickness of the first thin film layer 311 and the thickness of the second thin film layer 312 are equal to the thickness of the second mirror 320, and are both λ/4, where λ is the central wavelength of the second mirror 320.
The thickness of the first thin film layer 311 is equal to the thickness of the second thin film layer 312, and the material of the first thin film layer 311 is equal to the material of the second thin film layer 312, so that the thickness of the AR material layer in the first reflector 310 reaches λ/2, and the coating reflectivity of the first thin film layer 311 and the second thin film layer 312 is equal to the non-coating condition. On the basis, the third thin film layer 313 is further coated, so that the reflectivity of the first reflector 310 can be equal to the reflectivity of the third thin film layer 313.
In one embodiment, the first mirror 310 (HR film) and the second mirror 320 (AR film), the specific AR and HR thickness need to be determined according to different materials and wavelengths (λ). In one embodiment, λ =915nm, the second mirror 320 (AR film) is Si3N4 with a thickness of about 80-120 nm; the first mirror 310 (HR film) is a laminated material of 4 pairs of Si and Si3N4, and has a total thickness of about 750-1000 nm. Further, the thickness of the second mirror 320 is about 110-120 nm; the thickness of the first reflector 310 is 780-820 nm.
The reflectivity of the first reflector 310 (HR film) may be 92% to 100%. The second reflecting mirror 320 (AR film) may have a reflectance of 0.5% to 1.5%. In one embodiment, the reflectivity of the first mirror 310 is close to 100%; the reflectivity of the second mirror 320 is close to 1%.
In this embodiment, two resonator structures 300 are provided, and the first mirror 310 in the first resonator structure 300 and the second mirror 320 in the second resonator structure 300 are connected to each other through the first thin film layer 311 of the first mirror 310 in the first resonator structure 300. That is, the first thin film layer 311 of the first mirror 310 in the first resonator structure 300 and the second mirror 320 in the second resonator structure 300 may be integrated.
The second mirror 320 in the first resonator structure 300 and the first mirror 310 in the second resonator structure 300 are connected to each other through the first thin film layer 311 of the first mirror 310 in the second resonator structure 300. That is, the first thin film layer 311 of the first mirror 310 in the second resonator structure 300 and the second mirror 320 in the first resonator structure 300 may be integrated.
Fig. 6 is a schematic structural diagram of a semiconductor device 100 according to an embodiment of the present disclosure. The semiconductor device 100 includes a base 110 and a plurality of semiconductor structures 120, the plurality of semiconductor structures 120 are disposed on the base 110 and distributed in a linear array, and the semiconductor structures 120 are the semiconductor structures 120 shown in fig. 3 to 5.
In this embodiment, the semiconductor structure 120 is provided with a single row and four columns, and the output laser direction (output) of the packaged semiconductor device 100 is L2.
Therefore, the semiconductor device 100 of the embodiment is formed by packaging and bundling a plurality of dual-emission semiconductor structures 120 emitting light in two directions, so that the number of the semiconductor structures 120 can be reduced, the volume and the overall weight can be reduced, the total packaging cost can be reduced, and the labor required in the whole packaging process can be reduced.
And the semiconductor structure 120 may be directly applied to a packaging system of the semiconductor device 100 without any modification during a packaging process.
Fig. 7 is a flowchart illustrating a method for fabricating a semiconductor structure 120 according to an embodiment of the present disclosure. The present method may be used to fabricate the semiconductor structure 120 as shown in fig. 3-5. The method of fabricating the semiconductor structure 120 may include the steps of:
step 701: a chip body 200 is obtained.
The chip body 200 in this step may be the chip body 200 having the light emitting structure 220, and the laser gain medium in the chip body 200 may be a medium such as a solid (crystal, glass), a gas (atomic gas, ionic gas, molecular gas), a semiconductor, and a liquid. Among them, the light emitting structure 220 may be provided with one or more. In this embodiment, the number of the light emitting structures 220 corresponds to the number of the resonant cavity structures 300.
The chip body 200 in this step has two light-passing end faces 210, and the two light-passing end faces 210 are a first light-passing end face 211 and a second light-passing end face 212, respectively.
Step 702: the two light-passing end surfaces 210 are coated with a film to form a first reflecting mirror 310 and a second reflecting mirror 320.
In this step, a plurality of first reflectors 310 and a plurality of second reflectors 320 may be formed on the first light-transmitting end surface 211 and the second light-transmitting end surface 212 by using a thin film deposition technique (e.g., an evaporation coating or a sputtering coating process).
The step of generating the first mirror 310 and the step of generating the second mirror 320 may be associated with each other or independent of each other. For example, the step of generating the first mirror 310 and the step of generating the second mirror 320 may be related to each other, and thus may be used to generate the semiconductor structure 120 of the embodiment shown in fig. 5.
Fig. 8 is a flowchart illustrating a method for fabricating a semiconductor structure 120 according to an embodiment of the present application. Fig. 9 is a schematic step diagram illustrating a method for fabricating a semiconductor structure 120 according to an embodiment of the present application. The present method may be used to fabricate a semiconductor structure 120 as shown in fig. 5. The method of fabricating the semiconductor structure 120 may include the steps of:
step 801: a chip body 200 is obtained. See the description of step 701 in the above embodiments for details.
Step 802: a first optical film 501 with a first preset thickness is plated on both the first light-passing end surface 211 and the second light-passing end surface 212.
In this step, a first optical film 501 with a predetermined thickness is plated on all the surfaces of the first light-transmitting end surface 211 and the second light-transmitting end surface 212. In the step, an evaporation coating or sputtering coating process, resistance evaporation coating equipment, vacuum sputtering coating equipment and the like can be adopted.
The first optical film 501 is an Antireflection (AR) film, and the material of the first optical film 501 is an AR material, for example: si3N4(silicon nitride). The first predetermined thickness λ/4 in this step, where λ is the central wavelength of the first reflector 310. Lambda/4 thick Si3N4The material is such that the reflectivity of the first optical film 501 is close to 1%.
This step is the basis for generating the second mirror 320 and the first mirror 310.
Step 803: a second optical film 502 with a second preset thickness and a third optical film 503 with a third preset thickness are sequentially plated at a first preset position of the first optical film 501 on the first light-transmitting end face 211.
In this step, the first clear end surface 211, i.e., the right side surface, of the chip body 200 is coated.
The first predetermined position of this step, that is, where the first reflector 310 needs to be formed on the first light-passing end surface 211, can be implemented by using a mask 600, for example, by using the mask 600 to block the light-emitting structure 220 of one chip body 200. The first preset position in this step is the lower right corner of the chip body 200. The mask 600 in this step needs to be spaced apart from the light emitting structure 220 of the chip body 200 by more than 200 um.
The second optical film 502 of this step is an Antireflective (AR) film, and the material of the second optical film 502 is an AR material, for example: si3N4(silicon nitride); the third optical film 503 is a high-reflectivity (HR) film, and the material of the third optical film 503 is HR material. The third predetermined thickness of this step is greater than the second predetermined thickness. The second predetermined thickness of this step is λ/4, where λ is the central wavelength of the second mirror 320. In this step, the reflectivity of the second optical film 502 is close to that of the first optical film1%, the reflectance of the third optical film 503 is close to 100%.
In this step, the AR material is continuously additionally plated at the first preset position, so that the reflectivity of the plated films of the first optical film 501 and the second optical film 502 is equal to that of the un-plated film at the first preset position. On the basis, the third optical film 503 is further plated, so that the first optical film 501, the second optical film 502 and the third optical film 503 at the first predetermined position can be used as the first mirror 310 of one resonator structure 300, and the remaining first optical film 501 (except the first predetermined position) of the first light-passing end surface 211 can be used as the second mirror 320 of another resonator structure 300.
Step 804: the chip body 200 is rotated in a plane.
In this step, the chip body 200 is rotated 180 degrees in a plane, so that the second light-passing end surface 212 moves to the position of the first light-passing end surface 211 in step 803, for example, the second light-passing end surface 212 is changed from originally facing the left side to facing the right side. With such an arrangement, some device arrangements of step 803 can be used, and some prior debugging of step 805 is omitted, so that time cost is saved, and accuracy is high.
Step 805: a fourth optical film 504 with a fourth preset thickness and a fifth optical film 505 with a fifth preset thickness are sequentially plated at a second preset position of the first optical film 501 on the second light-passing end surface 212.
In this step, the second light-transmitting end surface 212, i.e., the right side surface of the chip body 200 is coated.
The second predetermined position of this step, where the first reflector 310 needs to be formed on the second light-passing end surface 212, can be implemented by using a mask 600, for example, by using the mask 600 to block the light-emitting structure 220 of one chip body 200. The mask 600 of this step may be the mask 600 of step 803, and like step 803, the second predetermined position of this step is the lower right corner of the chip body 200. The mask 600 in this step needs to be spaced apart from the light emitting structure 220 of the chip body 200 by more than 200 um.
The fourth optical film 504 in this step is an Antireflective (AR) film, and the material of the fourth optical film 504As AR materials, for example: si3N4(silicon nitride); the fifth optical film 505 is a high-reflectivity (HR) film, and the fifth optical film 505 is made of HR material. The fifth preset thickness of this step is greater than the fourth preset thickness. The fourth predetermined thickness of this step is λ/4, where λ is the central wavelength of the second mirror 320. In this step, the reflectivity of the fourth optical film 504 is close to 1%, and the reflectivity of the fifth optical film 505 is close to 100%.
In this step, the AR material is continuously additionally plated at the second preset position, so that the reflectivity of the plated films of the first optical film 501 and the fourth optical film 504 at the second preset position is equal to that of the un-plated film. On the basis, the fifth optical film 505 is further plated, so that the first optical film 501, the fourth optical film 504 and the fifth optical film 505 at the second predetermined position can be used as the first mirror 310 of one resonator structure 300, and the remaining first optical film 501 (except the second predetermined position) of the second light-passing end surface 212 can be used as the second mirror 320 of another resonator structure 300.
Fig. 10 is a flowchart illustrating a method for fabricating a semiconductor structure 120 according to an embodiment of the present application. The present method may be used to fabricate a semiconductor structure 120 as shown in fig. 5. The method of fabricating the semiconductor structure 120 may include the steps of:
step 901: a chip body 200 is obtained. See the description of step 701 in the above embodiments for details.
Step 902: a first optical film 501 with a first preset thickness is plated on both the first light-passing end surface 211 and the second light-passing end surface 212. See the description of step 902 in the above embodiments for details.
Step 903: a second optical film 502 with a second preset thickness and a third optical film 503 with a third preset thickness are sequentially plated at a first preset position of the first optical film 501 on the first light-transmitting end face 211. See the description of step 803 in the above embodiments for details.
Step 904: a fourth optical film 504 with a fourth preset thickness and a fifth optical film 505 with a fifth preset thickness are sequentially plated at a second preset position of the first optical film 501 on the second light-passing end surface 212.
In this step, the chip body 200 is not rotated in a plane, and the mask 600 needs to be changed in direction, moved and/or replaced during film plating. The rest can be referred to the description of step 805 in the above embodiment.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims (7)

1. A method of fabricating a semiconductor structure, for fabricating a semiconductor structure, the semiconductor structure comprising: the chip comprises a chip body and two resonant cavity structures, wherein the resonant cavity structures are arranged on the chip body and are adjacent to each other, and the two resonant cavity structures are a first resonant cavity structure and a second resonant cavity structure respectively;
the chip body is provided with two light-transmitting end faces at different sides, and the two light-transmitting end faces are a first light-transmitting end face and a second light-transmitting end face respectively;
each resonant cavity structure comprises a first reflecting mirror and a second reflecting mirror which are respectively arranged on two light-transmitting end surfaces, the reflectivity of the first reflecting mirror is greater than that of the second reflecting mirror, and an output window of the resonant cavity structure is formed on the second reflecting mirror;
in two adjacent resonant cavity structures, the output windows are respectively positioned on two light-transmitting end faces at different sides and used for enabling the different sides of the two adjacent resonant cavity structures to emit light so as to realize bidirectional lasing on a single semiconductor structure, namely realizing double-side light emission in opposite directions of two current injection windows on the same epitaxial layer;
the manufacturing method of the semiconductor structure comprises the following steps:
obtaining a chip body;
plating a first optical film with a first preset thickness on the first light-transmitting end face and the second light-transmitting end face;
sequentially plating a second optical film with a second preset thickness and a third optical film with a third preset thickness on a first preset position of the first optical film on the first light-transmitting end face; the first optical film, the second optical film and the third optical film at the first preset position are used as a first reflector of the first resonant cavity structure, and the first optical film except the first preset position on the first light-transmitting end surface is used as a second reflector of the second resonant cavity structure;
sequentially plating a fourth optical film with a fourth preset thickness and a fifth optical film with a fifth preset thickness on a second preset position of the first optical film on the second light-passing end face; the first optical thin film, the fourth optical thin film and the fifth optical thin film at the second preset position are used as first reflectors of a second resonant cavity structure, and the first optical thin film on the second light-transmitting end surface except the second preset position is used as second reflectors of the first resonant cavity structure;
the third preset thickness is larger than the second preset thickness, and the fifth preset thickness is larger than the fourth preset thickness; the first preset thickness, the second preset thickness and the fourth preset thickness are equal.
2. The method of claim 1, wherein: after a second optical film with a second preset thickness and a third optical film with a third preset thickness are sequentially plated at a first preset position of a first optical film on the first light-transmitting end face,
before a fourth optical film with a fourth preset thickness and a fifth optical film with a fifth preset thickness are sequentially plated at a second preset position of the first optical film on the second light-passing end face, the method comprises the following steps:
and rotating the chip body in a plane.
3. The method of claim 1, wherein the first mirror and the second mirror are disposed in parallel with respect to each other to make the resonant cavity structure a parallel-plane cavity structure.
4. The method of claim 1, wherein the reflectivity of the first reflector is 92% to 100%; the reflectivity of the second reflector is 0.5% -1.5%.
5. The method for fabricating the semiconductor structure according to claim 4, wherein the first predetermined thickness, the second predetermined thickness and the fourth predetermined thickness are λ/4, where λ is a central wavelength of the first reflector;
the material of the first optical film, the material of the second optical film and the material of the fourth optical film are the same and are Si3N4。
6. A semiconductor structure, comprising:
the chip body is provided with two light-transmitting end faces at different sides, and the two light-transmitting end faces are a first light-transmitting end face and a second light-transmitting end face respectively; and
the two resonant cavity structures are arranged on the chip body and are adjacent to each other, and the two resonant cavity structures are a first resonant cavity structure and a second resonant cavity structure respectively;
each resonant cavity structure comprises a first reflecting mirror and a second reflecting mirror which are respectively arranged on two light-transmitting end surfaces, the reflectivity of the first reflecting mirror is greater than that of the second reflecting mirror, and an output window of the resonant cavity structure is formed on the second reflecting mirror;
in two adjacent resonant cavity structures, the output windows are respectively positioned on two light-transmitting end faces at different sides and used for enabling the different sides of the two adjacent resonant cavity structures to emit light so as to realize bidirectional lasing on a single semiconductor structure, namely realizing double-side light emission in opposite directions of two current injection windows on the same epitaxial layer;
the first reflector and the second reflector are manufactured by plating first optical films with first preset thickness on the first light-transmitting end face and the second light-transmitting end face, sequentially plating second optical films with second preset thickness and third optical films with third preset thickness on the first preset position of the first optical film on the first light-transmitting end face, and sequentially plating fourth optical films with fourth preset thickness and fifth optical films with fifth preset thickness on the second preset position of the first optical film on the second light-transmitting end face;
the first optical thin film, the second optical thin film and the third optical thin film at the first preset position are used as first reflectors of a first resonant cavity structure, and the first optical thin film, the fourth optical thin film and the fifth optical thin film at the second preset position are used as first reflectors of a second resonant cavity structure;
the first optical film of the second light-transmitting end surface except the second preset position is used as a second reflecting mirror of the first resonant cavity structure; the first optical film except the first preset position on the first light-transmitting end surface is used as a second reflecting mirror of the second resonant cavity structure;
the third preset thickness is larger than the second preset thickness, and the fifth preset thickness is larger than the fourth preset thickness; the first preset thickness, the second preset thickness and the fourth preset thickness are equal.
7. A semiconductor device, comprising:
a base;
a plurality of semiconductor structures disposed on the base and distributed in a linear array, the semiconductor structure of claim 6.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101022206A (en) * 2007-03-15 2007-08-22 华中科技大学 Tunable semiconductor laser
CN103210490A (en) * 2010-08-27 2013-07-17 夸克星有限责任公司 Solid state light sheet or strip for general illumination
CN105071224A (en) * 2015-07-28 2015-11-18 深圳市创鑫激光股份有限公司 Laser
CN205828877U (en) * 2016-06-12 2016-12-21 上海高意激光技术有限公司 A kind of conjunction restraints semicondcutor laser unit
CN106785898A (en) * 2017-02-20 2017-05-31 广东工业大学 A kind of semiconductor laser fiber coupling system
CN111541148A (en) * 2020-05-15 2020-08-14 陕西源杰半导体技术有限公司 Preparation process of 25G anti-reflection laser

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6814887B2 (en) * 2016-12-23 2021-01-20 エヌライト，インコーポレーテッド Low cost optical pump laser package
CN207009893U (en) * 2017-07-13 2018-02-13 中国科学院半导体研究所 The multitube beam merging apparatus of single-tube semiconductor laser
CN110718855A (en) * 2019-09-18 2020-01-21 深圳市星汉激光科技有限公司 Semiconductor laser device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101022206A (en) * 2007-03-15 2007-08-22 华中科技大学 Tunable semiconductor laser
CN103210490A (en) * 2010-08-27 2013-07-17 夸克星有限责任公司 Solid state light sheet or strip for general illumination
CN105071224A (en) * 2015-07-28 2015-11-18 深圳市创鑫激光股份有限公司 Laser
CN205828877U (en) * 2016-06-12 2016-12-21 上海高意激光技术有限公司 A kind of conjunction restraints semicondcutor laser unit
CN106785898A (en) * 2017-02-20 2017-05-31 广东工业大学 A kind of semiconductor laser fiber coupling system
CN111541148A (en) * 2020-05-15 2020-08-14 陕西源杰半导体技术有限公司 Preparation process of 25G anti-reflection laser

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