CN109638640A - Semiconductor laser - Google Patents
Semiconductor laser Download PDFInfo
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- CN109638640A CN109638640A CN201910015103.8A CN201910015103A CN109638640A CN 109638640 A CN109638640 A CN 109638640A CN 201910015103 A CN201910015103 A CN 201910015103A CN 109638640 A CN109638640 A CN 109638640A
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- laser
- active area
- semiconductor laser
- layer
- brewster
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06233—Controlling other output parameters than intensity or frequency
- H01S5/06236—Controlling other output parameters than intensity or frequency controlling the polarisation, e.g. TM/TE polarisation switching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention relates to a kind of semiconductor lasers, define an XYZ space rectangular coordinate system, then the semiconductor laser includes: the electrode positioned at Z-direction front and back；For generating the active area of laser when electrode is powered；Ducting layer positioned at the Z-direction front and back of active layer and positioned at active area side；And the reflecting layer of the Y direction front and back positioned at ducting layer, the laser exit wound of bullet of the semiconductor laser are formed on the reflecting layer in front of Y direction.Wherein, the Brewster window that the laser for polarization direction to be parallel to X-direction screens is also formed at least one direction in the front and back of the Y direction of the active area.Semiconductor laser of the invention can directly export linearly polarized laser, no longer need to external addition optical device, and structure is simple, and in addition to using as laser, semiconductor laser structure of the invention can also be applied to the use of dielectric laser accelerator.
Description
Technical field
The present invention relates to laser, in particular to a kind of semiconductor laser.
Background technique
Semiconductor laser is widely used in every field scientific and technological, in life, is done with certain semiconductor material
Operation material and the device for generating laser.Its working principle is that by certain energisation mode, in the energy band of semiconductor substance
Between (conduction band and valence band) or between energy band and impurity (acceptor or donor) energy level of semiconductor substance, non-equilibrium load is realized
The population inversion for flowing son just generates stimulated emission and makees when a large amount of electronics and hole-recombination in population inversion state
With.There are mainly three types of the energisation modes of semiconductor laser, i.e. electrical pumping formula, optical pumping formula and high-power electron beam Exciting-simulator system.Electricity note
Enter formula semiconductor laser, usually by materials such as GaAs (GaAs), cadmium sulfide (CdS), indium phosphide (InP), zinc sulphide (ZnS)
Semiconductor junction diode made of expecting, is motivated along forward bias Injection Current, is generated and is stimulated in junction plane region
It penetrates.It needs to export laser in many fields such as optical fibre gyro, Fibre Optical Sensor, additive mixing, coherent beam combination to keep stablizing
Polarization characteristic, therefore studying has the semiconductor laser of single polarization output characteristics and certain extinction ratio with particularly significant
Meaning.Current Normal practice is to be polarized device, such as polarizing film, Nicol prism etc. for laser in laser external addition
Single polarization laser in the laser with random polarization state of device output screens, and structure is complicated, and light loss is larger.
Summary of the invention
The purpose of the present invention is to provide a kind of simple semiconductor lasers of structure.
A kind of semiconductor laser defines an XYZ space rectangular coordinate system, then the semiconductor laser includes: positioned at Z axis
The electrode of direction front and back；Active area between electrode is used to generate laser when electrode is powered, described active
The main extension plane in area is parallel to the plane that XY axis defines；Positioned at the Z-direction front and back of active layer and positioned at active
The ducting layer of area side；And the reflecting layer of the Y direction front and back positioned at ducting layer, the semiconductor laser swash
Light emission outlet is formed on the reflecting layer in front of Y direction.Wherein, the front and back of the Y direction of the active area
In at least one direction on be also formed with the Brewster that the laser for polarization direction to be parallel to X-direction screens
Window.
Preferably, the Brewster window is formed by performing etching on semiconductor material, defines Brewster
Angle is θ, then the Brewster window is θ or π-θ with respect to the tilt angle of Y-axis, and Brewster's angle θ and vacuum refractive index n2 and
The relationship of semiconductor material refractive index n1 is。
Preferably, defining the vacuum in Brewster window in the equivalent width of Y direction is D ', the intracavitary medium of laser resonance
Y direction equivalent width be L ', optical maser wavelength λ, then, m is positive integer.
Preferably, the width of single layer vacuum area is 50um-100um in the Brewster window.
As an implementation, the semiconductor material of the active area and the formation Brewster window includes
InGaAsP semiconductor material.
As an implementation, the front and back of the Y direction of the active area is each formed with for will polarization side
The Brewster window screened to the laser for being parallel to X-direction.
As an implementation, the semiconductor laser is Distributed Bragg Reflection laser, the cloth scholar
This special window is between active area and Distributed Bragg Reflection area, and in the Z-axis direction between insulating layer and substrate layer,
Width in the Z-axis direction is 50um-100um.
Semiconductor laser of the invention can directly export linearly polarized laser, no longer need to external addition optical device, knot
Structure is simple, and in addition to using as laser, semiconductor laser structure of the invention can also be applied to dielectric laser accelerator
Use.
Detailed description of the invention
Fig. 1 is that the front of the semiconductor laser of an embodiment is decided what is right and what is wrong figure.
Fig. 2 is that the vertical view of a part of the semiconductor laser of an embodiment is decided what is right and what is wrong figure.
Fig. 3 is the stereoscopic schematic diagram of a part of the semiconductor laser of an embodiment.
Fig. 4 is polarised light light path schematic diagram in Brewster window.
Fig. 5 is that the front of the semiconductor laser of another embodiment is decided what is right and what is wrong figure.
Specific embodiment
Semiconductor laser of the present invention is described in further detail below in conjunction with specific embodiments and drawings.
For convenience, an XYZ space rectangular coordinate system is defined, the laser of semiconductor laser projects direction towards Z
In front of axis direction, and it is parallel to Z axis.In first embodiment, as shown in Figure 1 to Figure 3, semiconductor laser 100 of the invention to
Few electrode 20 including being respectively arranged on Z-direction front and back and the active area 30 between electrode 20 are located at active area
The ducting layer 40 of 30 surroundings further includes the reflecting layer 60 of the Y direction front and back positioned at ducting layer 40.Laser exit wound of bullet position
On reflecting layer 60 in front of Y direction.In order to facilitate the various pieces for distinguishing semiconductor laser 100, Fig. 3, which is shown, partly to be led
Layer 30 and active area where the active area of body laser 100 the ducting layer 40 of Z-direction front and back perspective view,
It is omitted electrode 20, reflecting layer 60 and the Brewster window 44 in ducting layer 40, in specific embodiment, active area is only
Positioned at the medium position of layer 30, surrounding is surrounded by waveguide material；It is illustrated only in Fig. 1 and is parallel to what YZ axis defined along Fig. 3
The sectional view of section on plane semiconductor laser 100 illustrates only active area 30, anti-to avoid hatching from influencing to observe too much
The hatching of electrode 20 and ducting layer 40 is omitted in the hatching for penetrating layer 60 and Brewster window 44；It shows in Fig. 2 along Fig. 3
In be parallel to the plane that XY axis defines section on plane semiconductor laser 100 the ducting layer 40 being located in front of Z-direction
Sectional view.It should be understood that semiconductor laser 100 should include a shell, component is located at interior of shell and interior of shell is preferred
In vacuum state.
Wherein, the main extension plane of active area 30 is parallel to the plane that XY axis defines, and in the present embodiment, active area 30 is whole
By the semiconductor material for generating laser when electrode is powered, such as, but not limited to InGaAsP(InGaAsP) semiconductor
Material is constituted.In the present embodiment, active area 30, ducting layer 40 are formed as one or six faces to be respectively parallel to XY axis, YZ axis and XZ axis fixed
The rectangular parallelepiped structure of the plane of justice.Reflecting layer 60 is attached on two faces positioned at Y direction of the rectangular parallelepiped structure, to have
The radiation laser that source region generates is coupled in ducting layer with certain coupling efficiency, is returned after reflecting layer is reflected, and it is humorous to constitute optics
Shake chamber.Electrode 20 can be respectively provided with one or more metal layers, metal layer may include such as, but not limited to Ag, Au, Sn, Ti, Pt,
Alloy made of one of Pd, Rh and Ni are a variety of or several.Reflecting layer 60 may include high reflection film or be high reflectance
Coating, the such as, but not limited to metal layer with Bragg mirror sequence of layer or reflectivity.
It should be understood that may also include other function layer between ducting layer and electrode, such as, but not limited to passivation layer, insulation
Layer, growth substrates etc..
The present invention is formed in the front and back of the Y direction of active area 30 for polarization direction to be parallel to X-axis side
To the Brewster window 44 that screens of laser.In the present embodiment, Brewster window 44 is by enterprising in semiconductor material
Row etching is formed.In specific implementation, continued growth it can be formed in ducting layer 40 on the semiconductor material of active area
Opposite Y-axis inclined two block semiconductor material sections, and 30 two sides of active area are divided into, Brewster window is then formed by etching
44.Preferably, in Brewster window single layer vacuum area Y direction width be 50um-100um, that is, be much larger than laser wave
It is long, belong to geometric optics scope, Brewster window is having a size of schematic diagram in figure.
Definition Brewster's angle is θ, then Brewster window 44 is that θ (is located at Y direction in Fig. 2 with respect to the tilt angle of Y-axis
The angle of the Brewster window 44 in front and Y-axis) or π-θ (positioned at the Brewster window 44 and Y-axis at Y direction rear in Fig. 2
Angle), and Brewster's angle θ and vacuum refractive index n2With semiconductor material refractive index n1Relationship be.Define cloth
This special window 44 of scholar is D in the width of Y direction, and the vacuum in Brewster window 44 is D ', cloth scholar in the equivalent width of Y direction
Medium in this special window 44 is d in the equivalent width of Y direction, and the intracavitary medium of laser resonance is in the equivalent width of Y direction
L ', then L '=2*L1 '+L2 '+2*d, D=D '+d, optical maser wavelength λ, then, m is positive integer.
By taking semiconductor material is using InGaAsP as an example, refractive index n1=3.5, vacuum refractive index n2=1, cloth scholar can be calculated
This spy angle θ, that is, meet following formula,, then 15.94 ° and 164.16 ° are needed for etching
Tilt angle.
Configured in this way, active area generates the laser of all directions, cannot be amplified by gain non-parallel to the laser of Y-axis, puts down
Row forms the extreme light of line after the laser of Y-axis passes through Brewster window, according to the mechanism of stimulated radiation, due to passing through Brewster
After window is the extreme light of line, and when laser is again by active area gain media, the laser of generation is also the extreme light of line.To laser
It is round-trip in the resonant cavity with Brewster window 44 constituted, there is the laser for the polarization direction for being parallel to X-axis to be screened
Out.As shown in figure 4, laser is round-trip in the resonant cavity constituted, when entering the medium of Brewster window 44 by vacuum every time,
Meet Brewster corner condition, therefore the polarised light in the direction s is reflected, axial light path cannot gradually be declined by gain in reflected light deviation
Subtract.Polarization in single refraction light still containing the polarization direction s, but reflect light in single two-way process multipass cloth scholar this
After special window it includes the polarized component in the direction s be reduced rapidly, finally reach the good direction p polarised light.Therefore in semiconductor
Irradiation of the upper state electronics by the extreme light of line in active area, laser after gain also polarization direction having the same.To the greatest extent
It is still polarized comprising fraction s in pipe laser, but its quantity and the direction p have a large number of grade difference, will not accelerate to electronics
It impacts, it can be achieved that acceleration fields are identical as electron motion direction, i.e., acceleration laser is the extreme light of line.
In a specific example, selection semiconductor material is InGaAsP,
To sum up, electrode 20 and active area 30, ducting layer 40, reflecting layer 60 and other possible functional layer structures between electrode 20
At a semiconductor laser.Active area realizes population inversion under the effect of external exciting current, and the laser for reaching basic increases
Beneficial condition, the laser that active area generates are coupled in ducting layer with certain coefficient of coup.The present invention in ducting layer by being arranged
Brewster window eliminates the external optical polarizer so that the laser of intra resonant cavity reaches good linear polarization characteristic.
In above-described embodiment, semiconductor material has used InGaAsP, it is possible to understand that, other lasers can also be used
Used semiconductor material.
In above-described embodiment, the shape of laser is whole in a rectangular parallelepiped shape, it is possible to understand that, the shape of semiconductor laser
A variety of transformation can be done, for example, the front-end and back-end in Y direction of semiconductor laser can be prominent for arc in other embodiments
Shape or hemispherical are played, for another example in other embodiments, semiconductor laser can be in ladder in the front-end and back-end of Z-direction
Shape is substantially in triangle or trapezoidal shape.
In above-described embodiment, Brewster window is symmetrical set relative to active area, in other embodiments, active area two sides
Brewster window can have equivalent widths different in the Y-axis direction.
In above-described embodiment, active area two sides are provided with grating, in other embodiments, only grating can be arranged in side.
Such as in second embodiment as shown in Figure 5, Distributed Bragg Reflection (DBR, a Distributed
Bragg Reflector) laser 200 can be divided into the area DBR 70, Brewster window area 80 from back to front in the Y-axis direction and have
Source region 90, generally one or six faces are respectively parallel to the rectangular parallelepiped structure for the plane that XY axis, YZ axis and XZ axis define.Reflecting layer 60 '
It is attached on two faces positioned at Y direction of the rectangular parallelepiped structure.Wherein, the Bragg grating 71 for serving as reflecting mirror is located at
The region DBR 70.Brewster window 44 ' is formed in 90 side of Brewster window area 80 namely active area, for putting down polarization direction
Row is screened in the laser of X-direction.Brewster window 44 ' in the Z-axis direction will between insulating layer and substrate layer, and
Width in the Z-axis direction is 50um-100um.In active area 90, in the Z-axis direction, 30 ' position of gain semi-conductor substance of having chance with
Between waveguide material 40 ', and laser exit wound of bullet is located on the reflecting layer 60 ' in front of Y direction.The master of semiconductor substance 30 '
Extend plane and is parallel to the plane that XY axis defines.In the present embodiment, definition Brewster's angle is θ, then Brewster window 44 ' is opposite
The inclined angle of Y-axis is also basically the same as those in the first embodiment, Brewster's angle θ and vacuum refractive index n2With semiconductor material refractive index
n1Relationship be.The size of Brewster window 44 ' and the size relationship of the intracavitary medium of laser resonance and first are implemented
The principle of example is identical, and details are not described herein.
The laser 200 can also realize function similar with first embodiment, so that the laser of intra resonant cavity reaches very
Good linear polarization characteristic.
Although description of this invention combination embodiments above carries out, those skilled in the art
Member can carry out many replacements based on the above contents, modifications and variations, be obvious.Therefore, all such substitutions,
Improvements and changes are included in the spirit and scope of appended claims.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；It can be mechanical connect
It connects, is also possible to be electrically connected；It can be directly connected, can also can be in two elements indirectly connected through an intermediary
The interaction relationship of the connection in portion or two elements.It for the ordinary skill in the art, can be according to specific feelings
Condition understands the concrete meaning of above-mentioned term in the present invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more of the features.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
Claims (7)
1. a kind of semiconductor laser defines an XYZ space rectangular coordinate system characterized by comprising
Positioned at the electrode of Z-direction front and back；
Active area between electrode, is used to generate laser when electrode is powered, and the main extension plane of the active area is flat
The plane that row is defined in XY axis；
Ducting layer positioned at the Z-direction front and back of active layer and positioned at active area side；And
Positioned at the reflecting layer of the Y direction front and back of ducting layer, the laser exit wound of bullet of the semiconductor laser is formed in
On the reflecting layer in front of Y direction；
Wherein, it is also formed at least one direction in the front and back of the Y direction of the active area for that will polarize
It is oriented parallel to the Brewster window that the laser of X-direction screens.
2. semiconductor laser according to claim 1, which is characterized in that the Brewster window is by semiconductor
Perform etching and to be formed on material, definition Brewster's angle is θ, then the Brewster window with respect to Y-axis tilt angle for θ or
π-θ, and Brewster's angle θ and vacuum refractive index n2With semiconductor material refractive index n1Relationship be。
3. semiconductor laser according to claim 2, which is characterized in that define the vacuum in Brewster window in Y-axis
The equivalent width in direction is D ', the intracavitary medium of laser resonance in the equivalent width of Y direction is L ', optical maser wavelength λ, then, m is positive integer.
4. semiconductor laser according to claim 2, which is characterized in that single layer vacuum area in the Brewster window
Width be 50um-100um.
5. semiconductor laser according to claim 3, which is characterized in that the active area and the formation Brewster
The semiconductor material of window includes InGaAsP semiconductor material.
6. semiconductor laser according to claim 3, which is characterized in that the front of the Y direction of the active area and
Rear is each formed with the Brewster window that the laser for polarization direction to be parallel to X-direction screens.
7. semiconductor laser according to claim 3, which is characterized in that be Distributed Bragg Reflection laser, institute
Brewster window is stated between active area and Distributed Bragg Reflection area, and is located at insulating layer and substrate in the Z-axis direction
Between layer, width in the Z-axis direction is 50um-100um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910015103.8A CN109638640B (en) | 2019-01-08 | 2019-01-08 | Semiconductor laser device |
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| CN201910015103.8A CN109638640B (en) | 2019-01-08 | 2019-01-08 | Semiconductor laser device |
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| CN109638640A true CN109638640A (en) | 2019-04-16 |
| CN109638640B CN109638640B (en) | 2020-08-14 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111726930A (en) * | 2019-07-12 | 2020-09-29 | 惠州学院 | Accelerating device and medium laser accelerating structure based on semiconductor laser |
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Effective date of registration: 20210727 Address after: 516006 floors 2-4, No. 16 (plant a), Hechang West Third Road, Zhongkai high tech Zone, Huizhou City, Guangdong Province Patentee after: HUIZHOU ZHONGBANG ELECTRONICS Co.,Ltd. Address before: 516001 No.46 Yanda Avenue, Huicheng District, Huizhou City, Guangdong Province Patentee before: HUIZHOU University |
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