CN104112981A - Cooling device for semiconductor laser device - Google Patents
Cooling device for semiconductor laser device Download PDFInfo
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- CN104112981A CN104112981A CN201310135883.2A CN201310135883A CN104112981A CN 104112981 A CN104112981 A CN 104112981A CN 201310135883 A CN201310135883 A CN 201310135883A CN 104112981 A CN104112981 A CN 104112981A
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Abstract
The invention provides a cooling device for a semiconductor laser device. The cooling device comprises a water cooling base. The water cooling base is provided with a waterway for circulating cooling water. A dam structure protruded in the waterway is arranged in the waterway. The dam structure is used to divide the waterway into a first section, a second section and a third section which are communicated to each other. The first section and the third section are located on two sides of the dam structure separately. The second section is located between the first section and the third section and opposite to the dam structure. The second section is more close the one surface of the water cooling base compared with the first section and the third section.
Description
Technical field
The present invention relates to a kind of cooling device for semiconductor laser, relate in particular to a kind of cooling device with water-cooled path.
Background technology
The single longitudinal mode laser of the D1 line wavelength 795nm wave band of rubidium is the basic experiment instrument of the scientific experiments such as atom spectrum, quantum storage, EIT, and a lot of experiments need the single longitudinal mode narrow linewidth 795nm laser of high-power (>～200mW).But the output of commercial 795nm semiconductor laser tube only has 50mW, far can not meet powerful scientific experiment demand.
The 808nm laser close with 795nm is widely used in solid state laser pumping, is easy to buy single transverse mode 808nm semiconductor laser of 200mW, and many transverse modes of several W 808nm semiconductor laser.Because the wavelength of the shoot laser of semiconductor laser is relevant with temperature, therefore can be by regulating temperature adjusting wavelength.Generally speaking, mean temperature reduces by 5 degree, and wavelength reduces about 1nm.Therefore,, in order to obtain the semiconductor laser of powerful 795nm, thereby can carry out deep cooling to the laser tube of 808nm, regulate its wavelength.So, just can obtain with very low cost the semiconductor laser of the 795nm of 200mW.
Conventionally semiconductor laser wavelength temperature coefficient is generally 0.2nm/K.In order to obtain the output wavelength of 797nm from 808nm semiconductor laser, need to be cooled to subzero 30 degree left and right.For stable laser output wavelength, its temperature fluctuation is less than 10mK simultaneously.
The type of cooling of semiconductor laser mainly contains: 1) refrigeration machine: compression refigerating machine has high refrigerating efficiency and maximum temperature difference, but has mechanical oscillation during compressor operating, is difficult for miniaturization, and the response time is fast not; 2) semiconductor chilling plate: there is volume little, without working media and mechanical oscillation, respond fast advantage.
Semiconductor chilling plate can produce a large amount of used heat when refrigeration, as taken away being not in time accumulated in semiconductor chilling plate hot junction, can reduce refrigerating limit temperature, and the high temperature that used heat causes also likely damages laser.The used heat that semiconductor chilling plate produces is conventionally by fan or circulating water, and fan noise is not suitable for greatly accurate Experiments of Optics, and it is large that recirculated water has thermal capacitance, and therefore vibrationless advantage is widely adopted.But in the water route of circulating water cooling system, easily produce bubble, and the thermal conductivity of bubble is well below water, if bubble coalescence is in the part water route in hot junction of closing on semiconductor chilling plate, the heat that is accumulated in so semiconductor chilling plate hot junction cannot heat be delivered in recirculated water, thereby have a strong impact on the refrigeration of semiconductor chilling plate, cannot realize the refrigeration of semiconductor laser.
Summary of the invention
Therefore, the object of the invention is to overcome the defect of above-mentioned prior art, a kind of cooling device for semiconductor laser is provided, adopt circulation as heat abstractor, can prevent that bubble coalescence in water route is near the hot junction of semiconductor chilling plate.
The invention provides a kind of cooling device for semiconductor laser, there is water-cooling subbase, this water-cooling subbase has the water route for the cooling water that circulates, in water route, there is the dam structure protruding from water route, this dam structure is divided into the first paragraph that is connected, second segment and the 3rd section by water route, wherein first paragraph and the 3rd section of both sides that lay respectively at dam structure, second segment is between first paragraph and the 3rd section and relative with dam structure, and this second segment is than first paragraph and a 3rd section of surface closer to water-cooling subbase.
According to cooling device provided by the invention, the height of wherein said dam structure is more than or equal to the first paragraph in water route and the diameter of the 3rd section.
According to cooling device provided by the invention, wherein said dam structure makes the current of first paragraph, second segment and the 3rd section be U font.
According to cooling device provided by the invention, wherein said water-cooling subbase has the through hole that intersects and be connected with described water route, one end of this through hole extends to a surface of water-cooling subbase, the other end extends in described water route, in this through hole, be plugged with stopper, the first end of stopper is projected in water route, forms described dam structure in water route.
According to cooling device provided by the invention, wherein the second end of stopper and water-cooling subbase sealing.
According to cooling device provided by the invention, also comprise semiconductor chilling plate, contact with water-cooling subbase, the surface nearest with the second segment in water route described in the distance of water-cooling subbase, the hot junction of described semiconductor chilling plate contacts.
According to cooling device provided by the invention, also comprise laser support device, for carrying laser tube.
According to cooling device provided by the invention, also comprise seal box, sealing box has lid and box body, has Brewster window and plug on box body, and seal box covers semiconductor laser and seals with water-cooling subbase.
According to cooling device provided by the invention, in wherein said seal box, be placed with drier and foam.
The present invention by arranging dam structure in the water route of water-cooling subbase, make near the current of dam structure be U font, prevented the gathering of bubble, thereby can prevent that the bubble coalescence in water route from causing the used heat in the hot junction of semiconductor chilling plate heat to be delivered in the recirculated water in water route.
Accompanying drawing explanation
Referring to accompanying drawing, embodiments of the present invention is further illustrated, wherein:
Fig. 1 is the section schematic perspective view of cooling device according to an embodiment of the invention;
Fig. 2 is the profile of the water-cooling subbase of cooling device according to an embodiment of the invention;
Fig. 3 is the profile of the water-cooling subbase with stopper of cooling device according to an embodiment of the invention.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, the present invention is described in more detail.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
The present embodiment provides a kind of cooling device for semiconductor laser, Fig. 1 shows the section schematic perspective view of this device, this cooling device comprises: water-cooling subbase 301, by metallic aluminium, made, have end face and bottom surface, wherein end face is for carrying the semiconductor chilling plate 201 of cooling semiconductor laser; Semiconductor chilling plate 201, is positioned on the end face of water-cooling subbase 301, and its hot junction contacts with the end face of water-cooling subbase 301; Laser base 302, is positioned on the cold junction of semiconductor chilling plate 201, and for the laser pipe support 303 of support cylinder shape, 303 li of laser pipe supports are placed with laser tube and collimating lens; Plastic seal box 102, has transparent cover 101 and box body 104, and box body 104 belows have square opening, is used for placing semiconductor chilling plate 201 and the laser base 302 on it.
Wherein the profile of water-cooling subbase 301 as shown in Figure 2, this water-cooling subbase 301 has for the water route 400 of the cooling water that circulates and perpendicular to water route 400 through hole 500 that is connected with this water route, one end of this through hole 500 extends to the bottom surface of water-cooling subbase 301, the other end extends in above-mentioned water route 400, as shown in Figure 3, in this through hole 500, be plugged with stopper 405, the first end of this stopper 405 seals by fluid sealant 406 and water-cooling subbase, the second end of stopper 405 is projected in water route, to form dam structure 404 one in water route, this dam structure 404 is divided into water route the first paragraph 402 being connected, second segment 401 and the 3rd section 403, wherein first paragraph 402 and the 3rd section of 403 both sides that lay respectively at dam structure 404, second segment 401 is corresponding with dam structure 404, and the second segment 401 in water route is than first paragraph 402 and the 3rd section of 403 end face closer to water-cooling subbase 301, this part water-cooling subbase corresponding with the length of second segment 401 is thinner, thereby the used heat in semiconductor chilling plate hot junction can be delivered in water route quickly, the height on the upper edge of the top of dam structure 404 and the first paragraph in water route 402 and the 3rd section 403 equates or is slightly high, the height that is dam structure is more than or equal to the first paragraph 402 in water route and the diameter of the 3rd section 403, thereby make near current dam structure be U font, flow direction is as shown in the arrow in Fig. 3, dam structure forces current must flow through the top of dam structure, thereby wash away the bubble that may be gathered in there, therefore the setting of dam structure 404 can prevent that bubble coalescence is in the second segment 401 in water route, thereby prevent that bubble coalescence in water route is near the hot junction of semiconductor chilling plate.
Wherein as shown in Figure 1, the lid 101 of plastic seal box 102 and box body 104 joining places have a circle groove 103, spring seal strip sealing in groove, can completely cut off circulation of air, on a side of box body, have round hole, circle inserts the Brewster window 105 of being made by pvc pipe and slide in hole, slide and pvc pipe, pvc pipe and box body joining place sealant sealing, on box body another side, there is the sealing aviation plug 106 of placing through this side, as thermostat cable and current source cable, between box body and water-cooling subbase 301, with vacuum rubber cushion 107, seal, and compress with screw, in plastic seal box 102, be placed with the drier (not shown in figure 1) with gauze parcel, foam-filled prevention cross-ventilation for remaining space, transparent lid is convenient to check laser, and whether frosting and drier lost efficacy, lid is also easy to open, be convenient to laser to carry out Operation and maintenance.
The present embodiment by arranging dam structure in the water route of water-cooling subbase, make near the current of dam structure be U font, prevented the gathering of bubble, thereby can prevent that the bubble coalescence in water route from causing the used heat in the hot junction of semiconductor chilling plate heat to be delivered in the recirculated water in water route.
In addition, the dam structure in the present embodiment is to form by passing the bottom surface of water-cooling subbase and extending to the stopper being projected in water route, and the benefit of doing is like this to be easy to processing, without forming crooked water route.But in other embodiments, also can form by other means dam structure, for example, the water route of water-cooling subbase is directly processed into and be had dam structure.
According to other embodiments of the invention, wherein water-cooling subbase also can be made by other materials, is preferably the metal that thermal conductivity is good.
According to other embodiments of the invention, wherein said in the present invention " end face ", " bottom surface ", " upper along " isotropy word are the direction of take in Fig. 1, Fig. 2 and Fig. 3 and describe as benchmark, it will be understood by those skilled in the art that, in actual applications, the placement direction of various parts is variable, as long as relative position relation is constant.
Cooling device provided by the invention can be used for frequency locking laser that scientific research uses, injection locking from laser, exocoel frequency stabilization formula laser etc.
For example, when doing rubidium 85 atom experiment, the D1 line transition that use rubidium 85, the wavelength of D1 line is 795nm, and it is higher that laser power needs, but on market, retrievable laser tube is all away from this wavelength, and the 808nm laser tube of 200mW can be easy to very cheap obtaining.So, the 808nm laser tube of 200mW is cooled to subzero 28 degree, can obtain the 795nm laser of the good model of 200mW.
Again for example, when doing potassium 39 atom experiment, the D2 line transition that use potassium 39, the wavelength of D2 line is 767nm, same laser power needs higher, but on market, retrievable laser tube is all away from this wavelength, and the 780nm laser tube of 200mW can be easy to very cheap obtaining.So the 780nm laser tube of 200mW is cooled to subzero 30 degree, can obtain the 767nm laser of the good model of 200mW.
It should be noted last that, above embodiment is only unrestricted in order to technical scheme of the present invention to be described.Although the present invention is had been described in detail with reference to embodiment, those of ordinary skill in the art is to be understood that, technical scheme of the present invention is modified or is equal to replacement, do not depart from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of claim scope of the present invention.
Claims (9)
1. the cooling device for semiconductor laser, there is water-cooling subbase, this water-cooling subbase has the water route for the cooling water that circulates, in water route, there is the dam structure protruding from water route, this dam structure is divided into the first paragraph that is connected, second segment and the 3rd section by water route, wherein first paragraph and the 3rd section of both sides that lay respectively at dam structure, second segment is between first paragraph and the 3rd section and relative with dam structure, and this second segment is than first paragraph and a 3rd section of surface closer to water-cooling subbase.
2. cooling device according to claim 1, the height of wherein said dam structure is more than or equal to the first paragraph in water route and the diameter of the 3rd section.
3. cooling device according to claim 1, wherein said dam structure makes the current of first paragraph, second segment and the 3rd section be U font.
4. cooling device according to claim 1, wherein said water-cooling subbase has the through hole that intersects and be connected with described water route, one end of this through hole extends to a surface of water-cooling subbase, the other end extends in described water route, in this through hole, be plugged with stopper, the first end of stopper is projected in water route, forms described dam structure in water route.
5. cooling device according to claim 4, wherein the second end of stopper and water-cooling subbase sealing.
6. cooling device according to claim 1, also comprises semiconductor chilling plate, contacts with water-cooling subbase, and the surface nearest with the second segment in water route described in the distance of water-cooling subbase, the hot junction of described semiconductor chilling plate contacts.
7. cooling device according to claim 1, also comprises laser support device, for carrying laser tube.
8. cooling device according to claim 1, also comprises seal box, and sealing box has lid and box body, has Brewster window and plug on box body, and seal box covers semiconductor laser and seals with water-cooling subbase.
9. cooling device according to claim 8, is placed with drier and foam in wherein said seal box.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310135883.2A CN104112981A (en) | 2013-04-18 | 2013-04-18 | Cooling device for semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310135883.2A CN104112981A (en) | 2013-04-18 | 2013-04-18 | Cooling device for semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104112981A true CN104112981A (en) | 2014-10-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310135883.2A Pending CN104112981A (en) | 2013-04-18 | 2013-04-18 | Cooling device for semiconductor laser device |
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| CN (1) | CN104112981A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104795726A (en) * | 2015-05-05 | 2015-07-22 | 中国科学院武汉物理与数学研究所 | Semiconductor laser device capable of being operated below zero DEG C by integral refrigeration |
| CN105742955A (en) * | 2016-05-12 | 2016-07-06 | 核工业理化工程研究院 | Semiconductor laser diode fin-type heat dissipation device |
| CN108695678A (en) * | 2017-04-03 | 2018-10-23 | 发那科株式会社 | Laser aid |
| CN109638640A (en) * | 2019-01-08 | 2019-04-16 | 惠州学院 | Semiconductor laser |
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| US20040169451A1 (en) * | 2003-02-28 | 2004-09-02 | Citizen Electronics Co., Ltd. | Light emitting element and light emitting device with the light emitting element and method for manufacturing the light emitting element |
| JP2005070651A (en) * | 2003-08-27 | 2005-03-17 | Seiko Epson Corp | Light source device and projection display device |
| US20060045153A1 (en) * | 2004-08-31 | 2006-03-02 | Carter Serrena M | Low thermal expansion coefficient cooler for diode-laser bar |
| CN102055132A (en) * | 2010-11-26 | 2011-05-11 | 中国科学院物理研究所 | Semiconductor laser device capable of deep cooling and sealing device thereof |
| CN102474068A (en) * | 2010-03-10 | 2012-05-23 | 松下电器产业株式会社 | Semiconductor laser apparatus |
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2013
- 2013-04-18 CN CN201310135883.2A patent/CN104112981A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040169451A1 (en) * | 2003-02-28 | 2004-09-02 | Citizen Electronics Co., Ltd. | Light emitting element and light emitting device with the light emitting element and method for manufacturing the light emitting element |
| JP2005070651A (en) * | 2003-08-27 | 2005-03-17 | Seiko Epson Corp | Light source device and projection display device |
| US20060045153A1 (en) * | 2004-08-31 | 2006-03-02 | Carter Serrena M | Low thermal expansion coefficient cooler for diode-laser bar |
| CN102474068A (en) * | 2010-03-10 | 2012-05-23 | 松下电器产业株式会社 | Semiconductor laser apparatus |
| CN102055132A (en) * | 2010-11-26 | 2011-05-11 | 中国科学院物理研究所 | Semiconductor laser device capable of deep cooling and sealing device thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104795726A (en) * | 2015-05-05 | 2015-07-22 | 中国科学院武汉物理与数学研究所 | Semiconductor laser device capable of being operated below zero DEG C by integral refrigeration |
| CN104795726B (en) * | 2015-05-05 | 2018-04-20 | 中国科学院武汉物理与数学研究所 | Integrally cooling can be operated in the semicondcutor laser unit below zero degrees celsius |
| CN105742955A (en) * | 2016-05-12 | 2016-07-06 | 核工业理化工程研究院 | Semiconductor laser diode fin-type heat dissipation device |
| CN105742955B (en) * | 2016-05-12 | 2019-03-29 | 核工业理化工程研究院 | Semiconductor laser diode rib-type radiator |
| CN108695678A (en) * | 2017-04-03 | 2018-10-23 | 发那科株式会社 | Laser aid |
| CN108695678B (en) * | 2017-04-03 | 2020-06-16 | 发那科株式会社 | Laser device |
| CN109638640A (en) * | 2019-01-08 | 2019-04-16 | 惠州学院 | Semiconductor laser |
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Application publication date: 20141022 |