CN214899327U - Multi-tube semiconductor laser - Google Patents
Multi-tube semiconductor laser Download PDFInfo
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- CN214899327U CN214899327U CN202121189304.9U CN202121189304U CN214899327U CN 214899327 U CN214899327 U CN 214899327U CN 202121189304 U CN202121189304 U CN 202121189304U CN 214899327 U CN214899327 U CN 214899327U
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Abstract
The utility model provides a multitube semiconductor laser, including two light emitting module that face-to-face set up, what each light emitting module was all arranged in formation is equipped with a plurality of luminescence units, each luminescence unit all includes laser chip and is located the slow axis collimating mirror that corresponds laser chip light-emitting direction, and the line between the play plain noodles mid point of a laser chip and another luminescence module with it the oblique first laser chip's play plain noodles mid point passes the slow axis collimating mirror that this laser chip corresponds. By widening the width of the slow axis collimating mirror, the slow axis collimating mirror can effectively prevent edge stray light from emitting to the opposite laser chip. And because the laser chips are arranged in a face-to-face array, the density of the laser chips is low, the probability of chip death can be effectively reduced, and the service life of the chips is prolonged.
Description
Technical Field
The utility model relates to a laser instrument technical field especially relates to a multitube semiconductor laser.
Background
The laser is a device capable of emitting laser, and a common semiconductor laser is widely applied to the fields of industrial processing, military, medical treatment, security and the like due to the advantages of small size, light weight, high efficiency, long service life and the like. With the rapid development of fiber lasers, the demand for high-power and high-beam-quality semiconductor lasers is increasing, and at present, two types of semiconductor lasers, i.e., a single-tube semiconductor laser and a multi-single-tube semiconductor laser, mainly exist in the market, wherein a multi-single-tube semiconductor laser, such as a 24-tube-core high-power laser, is often used in high-power situations.
However, the existing multi-tube semiconductor laser mainly adopts a double-row paired design and is arranged in a face-to-face spaced queue, in order to ensure the quality of output laser, each group of laser light emitting modules sequentially comprises a laser chip, a fast axis collimator and a slow axis collimator, however, generally, because the emergent light of the laser chip has a certain edge stray light in the slow axis direction, and the distance between the slow axis collimator and the laser chip is the working distance of the slow axis collimator, the distance cannot be changed at will, so that the edge stray light exceeds the incident range of the slow axis collimator and directly irradiates to the laser chip in the opposite laser light emitting module, and further the working and the service life of the opposite and oblique laser chip are influenced.
This problem is mainly solved in two ways at present: 1. back-to-back spaced queue arrangement is adopted to replace face-to-face spaced queue arrangement, as shown in the technical scheme of patent document with application number 201810724714.5, but due to the structural characteristics, laser chips are too dense, so that heat is dense easily, chip death events are easy to occur, and high-power lasers in the industry are not usually used; 2. the distance between any two adjacent laser chips in each row is pulled apart, so that each laser chip is out of the irradiation range of the output light of the opposite laser chip, however, the layout needs a larger space, thereby resulting in a larger volume of the laser, or because the distance between the laser chips is larger, only a smaller number of laser chips can be arranged in the same space, resulting in fewer laser chips and a lower power of the laser.
SUMMERY OF THE UTILITY MODEL
The embodiment of the utility model provides a purpose provides a multitube semiconductor laser can prevent effectively that marginal veiling glare from to laser chip's injury.
The utility model provides a multitube semiconductor laser, including two light emitting module that face-to-face set up, each the light emitting module all is arranged in formation and is equipped with a plurality of luminescence units, each luminescence unit all includes laser chip and is located the slow axis collimating mirror that corresponds laser chip light-emitting direction, and the line between the play plain noodles mid point of a laser chip and the opposite play plain noodles mid point of the first laser chip to one side with it passes the slow axis collimating mirror that corresponds with this laser chip.
Furthermore, each all be equipped with fast axle collimating mirror before laser chip's the light-emitting face, slow axle collimating mirror is plane projection structure, including the cuboid that has the incident plane and the projection structure that has the collimation exit surface, what laser chip sent passes the emergent light of fast axle collimating mirror all jets into corresponding at width direction in the incident plane.
Furthermore, the two light emitting modules are opposite in the longitudinal direction, the width of the incident surface is A, A & gt 2DL/H, D is the transverse distance between one laser chip and the first laser chip which is opposite and diagonally opposite to the laser chip, H is the longitudinal distance between the laser chip and the laser chip which is opposite and diagonally opposite to the laser chip and is closest to the laser chip, and L is the distance between the laser chip and the incident surface corresponding to the laser chip.
Furthermore, the emergent light passing through the fast axis collimating mirror comprises collimated light and edge stray light, the light penetrating through the slow axis collimating mirror and emergent from the collimated emergent surface is the collimated light, the light which enters the incident surface and is emergent from the side wall of the rectangular body is the edge stray light, and the edge stray light and the emergent surface of the opposite laser chip are staggered.
Furthermore, each light emitting unit further comprises a first reflector located in the light emitting direction of the collimation emergent surface, the laser further comprises steps and output optical fibers, the two light emitting units corresponding to each other in the light emitting modules are arranged at two opposite ends of the same step, the step where the light emitting unit farther away from the output optical fibers is located is higher, and light reflected by the first reflector finally enters the output optical fibers. Furthermore, the laser also comprises a polarization beam combiner, a focusing lens and a second reflecting mirror, wherein the emergent light of one light-emitting module is polarized and combined with the emergent light of the other light-emitting module in the polarization beam combiner after passing through the second reflecting mirror, and the polarized and combined light is emitted into the output optical fiber through the focusing lens.
The utility model provides a multitube semiconductor laser has following beneficial effect: through widening the width of the slow axis collimating mirror, when avoiding marginal veiling glare to the laser chip and then influence the work and the life-span of laser chip, because of each luminescence unit adopts face-to-face array to arrange, so many laser chips can not be because of back-to-back excessively intensive, can not increase the heat dissipation burden of laser instrument, can effectively reduce dead probability, and need not to enlarge the distance between two adjacent laser chips in the same row, can increase the quantity of laser chip in unit volume, help improving the power of laser instrument.
Drawings
Fig. 1 is a schematic view of a multi-tube semiconductor laser according to the present invention;
fig. 2 is a schematic diagram of a multi-tube semiconductor laser provided by the utility model when a slow axis collimating mirror has a minimum theoretical width;
FIG. 3 is a schematic diagram of the slow axis collimating mirror for emitting the emergent light from the middle laser chip;
in the figure:
1. 1' a light emitting module; 11. 11' a light emitting unit; 111. 111' laser chip; 112. 112' fast axis collimating mirror;
113. 113' a slow axis collimating mirror; 1131. a rectangular body; 1131a, an incident surface; 1132. a convex column structure; 1132a, a collimating exit surface; 114. 114' a first mirror; 2. a step; 3. an output optical fiber; 4. a second reflector; 5. a focusing lens; b. connecting wires; 7. collimating light; 8. edge veiling glare; 9. a polarization beam combiner.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be further described with reference to the accompanying drawings.
Referring to fig. 1 and 2, the present invention provides a multi-tube semiconductor laser, including two light emitting modules 1, 1 'disposed face to face, each of the light emitting modules 1, 1' is provided with a plurality of light emitting units 11, 11 'arranged in a row, each of the light emitting units 11, 11' includes a laser chip 111, 111 'and a slow axis collimating mirror (SAC)113, 113' located in the light emitting direction of the corresponding laser chip 111, 111 ', as shown in fig. 2, a connection line b between the light emitting surface midpoint of any laser chip 111' in the light emitting module 1 'and the light emitting surface midpoint of the first laser chip 111 in the opposite light emitting module 1, which is diagonally opposite to the laser chip 111', passes through the slow axis collimating mirror 113 'corresponding to the laser chip 111', so that the distance between any two adjacent laser chips 111 disposed in the same row can be reduced. The light emitting modules 1 'and 1 are arranged in axial symmetry, so that any two adjacent laser chips 111' arranged in the same row can have a smaller distance therebetween.
Referring to fig. 1, in order to ensure the laser quality of the laser, a fast axis collimating mirror 112, 112 'is further disposed in front of the light exit surface of each of the laser chips 111, 111', the slow axis collimating mirror 113, 113 'is a planar convex pillar structure, and includes a rectangular body 1131 having an incident surface 1131a and a convex pillar structure 1132 having a collimated exit surface 1132a, and the light exit passing through the fast axis collimating mirror 112, 112' generally includes collimated light 7 and edge stray light 8.
Referring to fig. 3, in the present invention, the light passing through the slow axis collimating mirrors 113 and 113' and exiting from the collimating exit surface 1132a is collimated light 7, the collimated light 7 can be converged into the main optical path to form the output laser of the laser, the light entering the entrance surface 1131a and exiting from the side wall of the rectangular body 1131 is edge stray light 8, and the edge stray light 8 cannot be converged into the main optical path to form the output laser of the laser.
Referring to fig. 2, the direction of the two light emitting modules 1 and 1 ' is defined as a longitudinal direction, and the width of the incident surface 1131a is defined as a, then a > 2DL/H, D is the transverse distance between two adjacent laser chips 111 and 111 ' in the same row, H is the longitudinal distance between the laser chip 111 ' and the first laser chip 111 diagonally opposite to the laser chip 111 ', L is the distance between the laser chip 111 ' and the incident surface 1131a corresponding to the laser chip, or L is the working distance of the slow axis collimating mirror 113 ', which is the focal length of the slow axis collimating mirror 113 ', the distance between the laser chip 111 ' and the fast axis collimating mirror 112 ', and the thickness of the fast axis collimating mirror, and is a fixed value and cannot be changed at will.
Referring to FIG. 2, the derivation process of A > 2DL/H is roughly: (1) when a connecting line b between the midpoint of the light-emitting surface of a laser chip (for clarity, it is called a first laser chip 111 ') and the midpoint of the light-emitting surface of a first laser chip (for clarity, it is called a second laser chip 111) which is diagonally opposite to the first laser chip is just wiped across the edge of the incident surface 1131a of the slow-axis collimating mirror 113' corresponding to the laser chip (the first laser chip 111 '), the width of the slow-axis collimating mirror 113' is at the critical minimum of the width thereof, (2) because the laser chips 111 'and the slow-axis collimating mirror 113' corresponding to the laser chips 111 'are coaxial, the laser chips 111' are aligned with the opposite laser chips 111 one by one, according to the principle of similar triangle: 0.5A/D is L/H, the equation is transformed to obtain a 2DL/H, and (3) since the laser light emitted from the laser chip 111 'is incident on the corresponding incident surface 1131a in the width direction, the laser light emitted from the laser chip 111' is not incident on the light-emitting surface of the laser chip 111 diagonally opposite to the incident surface, the actual width a of the incident surface 1131a is greater than the critical minimum value of the width, so a is greater than 2 DL/H.
The utility model discloses in, the emergent light that laser chip 111, 111 ' sent passes all penetrate into corresponding with it in the width direction behind fast axle collimating mirror 112, 112 ', in the incident surface 1131a, through widening promptly the width A of slow axle collimating mirror 113, 113 ' makes width A > 2DL/H to can make above-mentioned collimated light 7 and marginal veiling glare 8 all can penetrate in the width direction incident surface 1131 a. And the edge stray light 8 in the emergent light from the fast axis collimating lenses 112, 112 'will be refracted after passing through the slow axis collimating lenses 113, 113', the light path after refraction will be inwardly convergent and inwardly deflected, as shown in fig. 2 and fig. 3, so that the edge stray light 8 is emitted to the region between the opposite laser chips 111, 111 'and is staggered with the emergent surface of the opposite laser chips 111, 111', and thus, the laser chips can not be affected and damaged by the edge stray light 8.
Each of the light emitting units 11, 11 'further includes a first reflecting mirror 114, 114' located in the light emitting direction of the collimating exit surface 1132a, the laser further includes a step 2 and an output optical fiber 3, the light emitting units 11, 11 'in the two light emitting modules 1, 1' are in one-to-one correspondence, and the light emitting units 11, 11 'corresponding to each other are located on the same step 2, the step 2 where the light emitting unit 11, 11' located farther from the output optical fiber 3 is higher, so that the collimated light 7 incident into the first reflecting mirror 114, 114 'is not shielded by other first reflecting mirrors 114, 114' in the same queue before being reflected and turned by the first reflecting mirrors 114, 114 'and then being incident into the next optical element, and thus the light reflected by the first reflecting mirrors 114, 114' can finally be incident into the output optical fiber 3.
The collimated light 7 reflected by the first mirrors 114, 114' may be incident into the output fiber 3 by means of a combined polarization: the laser further comprises a polarization beam combiner 9, a focusing lens 5 and a second reflecting mirror 4, the emergent light of one light emitting module 1 is polarized and combined with the emergent light of the other light emitting module 1' in the polarization beam combiner 9 after passing through the second reflecting mirror 4, the polarized and combined light is focused by the focusing lens 5 and enters the output optical fiber 3, and the brightness of the output laser can be increased in the incident mode. Other modes of incidence to the output fiber 3 may be selected according to actual needs, and are not limited herein.
Adopt the technical scheme of the utility model, avoid 8 directive laser chip 111 of marginal veiling glare, 111 ' and then influence laser chip 111, 111 ''s work and life-span in, because of each luminescence unit 11, 11 ' adopts face-to-face array to arrange, so many laser chip 111, 111 ' can not be because of back to back and excessively intensive, can not increase the heat dissipation burden of laser instrument, can effectively reduce the probability of burning the core, and need not to enlarge two adjacent laser chip 111 in the same row, distance between the 111 ', can increase laser chip 111 in the unit volume, 111's quantity, help improving the power of laser instrument.
In this document, the terms front, back, upper and lower are used to define the components in the drawings and the positions of the components relative to each other, and are used for clarity and convenience of the technical solution. It is to be understood that the use of the directional terms should not be taken to limit the scope of the claims.
The features of the embodiments and embodiments described herein above may be combined with each other without conflict.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included within the protection scope of the present invention.
Claims (6)
1. A multi-tube semiconductor laser characterized by: the light-emitting module comprises two light-emitting modules arranged face to face, wherein each light-emitting module is provided with a plurality of light-emitting units in a queue arrangement, each light-emitting unit comprises a laser chip and a slow-axis collimating mirror located in the light-emitting direction of the corresponding laser chip, and a connecting line between the midpoint of the light-emitting surface of one laser chip and the midpoint of the light-emitting surface of the first laser chip which is opposite to the midpoint of the light-emitting surface of the first laser chip and is obliquely opposite to the midpoint of the light-emitting surface of the first laser chip penetrates through the slow-axis collimating mirror corresponding to the laser chip.
2. A multi-tube semiconductor laser as claimed in claim 1 wherein: each all be equipped with fast axle collimating mirror before laser chip's the light-emitting face, slow axle collimating mirror is plane projection structure, including the cuboid that has the incident surface and the projection structure that has the collimation exit surface, what laser chip sent passes fast axle collimating mirror's emergent light all jets into corresponding with it in the width direction in the incident surface.
3. A multi-tube semiconductor laser as claimed in claim 2 wherein: the two light emitting modules are opposite in the longitudinal direction, the width of the incident surface is A, A & gt 2DL/H, D is the transverse distance between one laser chip and the first laser chip which is opposite and diagonally opposite to the laser chip, H is the longitudinal distance between the laser chip and the first laser chip which is opposite and diagonally opposite to the laser chip, and L is the distance between the laser chip and the incident surface corresponding to the laser chip.
4. A multi-tube semiconductor laser as claimed in claim 2 wherein: emergent light penetrating through the fast axis collimating mirror comprises collimated light and edge stray light, the light penetrating through the slow axis collimating mirror and emergent from the collimated emergent surface is the collimated light, the light which enters the incident surface and is emergent from the side wall of the rectangular body is the edge stray light, and the edge stray light and the emergent surface of the laser chip opposite to the edge stray light are staggered.
5. A multi-tube semiconductor laser as claimed in claim 2 wherein: each light-emitting unit further comprises a first reflector positioned in the light-emitting direction of the collimation emergent surface, the laser further comprises steps and output optical fibers, the light-emitting units corresponding to each other in the two light-emitting modules are arranged at two opposite ends of the same step, the step where the light-emitting unit farther away from the output optical fibers is positioned is higher, and light reflected by the first reflector finally enters the output optical fibers.
6. A multi-tube semiconductor laser as claimed in claim 5 wherein: the laser device further comprises a polarization beam combiner, a focusing lens and a second reflecting mirror, wherein emergent light of the light emitting module passes through the second reflecting mirror and then is combined with emergent light of the other light emitting module in a polarization beam combiner in a polarization mode, and the light combined in the polarization mode is emitted into the output optical fiber through the focusing lens.
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| CN202121189304.9U CN214899327U (en) | 2021-05-31 | 2021-05-31 | Multi-tube semiconductor laser |
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| CN202121189304.9U CN214899327U (en) | 2021-05-31 | 2021-05-31 | Multi-tube semiconductor laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116598886A (en) * | 2023-07-14 | 2023-08-15 | 深圳市星汉激光科技股份有限公司 | Laser output system, method and medium based on semiconductor laser |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116598886A (en) * | 2023-07-14 | 2023-08-15 | 深圳市星汉激光科技股份有限公司 | Laser output system, method and medium based on semiconductor laser |
| CN116598886B (en) * | 2023-07-14 | 2023-09-15 | 深圳市星汉激光科技股份有限公司 | Laser output system, method and medium based on semiconductor laser |
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