CN213341081U

CN213341081U - Semiconductor laser

Info

Publication number: CN213341081U
Application number: CN202022593089.0U
Authority: CN
Inventors: 周少丰; 刘鹏; 黄良杰
Original assignee: Shenzhen Xinghan Laser Technology Co Ltd
Current assignee: Shenzhen Xinghan Laser Technology Co Ltd
Priority date: 2020-11-10
Filing date: 2020-11-10
Publication date: 2021-06-01
Anticipated expiration: 2030-11-10

Abstract

A semiconductor laser comprises a plurality of laser units, a first reflector, a second reflector, a focusing lens and an output optical fiber; the laser unit comprises a semiconductor laser single tube, a fast axis collimating mirror, a slow axis collimating mirror and a third reflecting mirror, the area between the fast axis collimating mirror and the slow axis collimating mirror is an arrangement area, the focusing lens is arranged in the arrangement area, laser emitted by the semiconductor laser single tube is converted into parallel laser beams after sequentially passing through the fast axis collimating mirror, the slow axis collimating mirror and the third reflecting mirror, the parallel laser beams are sequentially reflected by the first reflecting mirror and the second reflecting mirror and then convert the light propagation direction by 180 degrees, and the parallel laser beams are focused by the focusing lens and then are coupled into the output optical fiber.

Description

Semiconductor laser

Technical Field

The utility model relates to a laser instrument technical field especially relates to a semiconductor laser.

Background

The laser is a device capable of emitting laser, and generates laser through a single semiconductor laser tube arranged therein, but the power of the single semiconductor laser tube is limited, and the brightness of the generated laser cannot meet practical requirements, so that a plurality of single semiconductor laser tubes are required to be overlapped, and the brightness of the output laser is increased.

In the current technical scheme, laser output by a semiconductor laser single tube is generally reflected by a fast axis collimating lens, a slow axis collimating lens and a reflector which is arranged in a staggered mode, then is superposed in the direction of a fast axis and a slow axis, and is focused by a fast axis focusing lens and a slow axis focusing lens and then is coupled into an output optical fiber.

Disclosure of Invention

To the above-mentioned defect of prior art, the utility model provides an aim at provides a semiconductor laser, through increasing the speculum, can reduce semiconductor laser's length under the prerequisite of guaranteeing laser instrument output luminance, the installation of being convenient for is arranged.

The utility model provides a semiconductor laser, which comprises a plurality of laser units, a first reflector, a second reflector, a focusing lens and an output optical fiber; the laser unit comprises a semiconductor laser single tube, a fast axis collimating mirror, a slow axis collimating mirror and a third reflecting mirror, the area between the fast axis collimating mirror and the slow axis collimating mirror is an arrangement area, the focusing lens is arranged in the arrangement area, laser emitted by the semiconductor laser single tube is converted into parallel laser beams after sequentially passing through the fast axis collimating mirror, the slow axis collimating mirror and the third reflecting mirror, the parallel laser beams are sequentially reflected by the first reflecting mirror and the second reflecting mirror and then convert the light propagation direction by 180 degrees, and the parallel laser beams are focused by the focusing lens and then are coupled into the output optical fiber.

The utility model provides a technical scheme has following beneficial effect: the utility model provides a semiconductor laser is through setting up first speculum and second mirror 180 degrees with the light propagation direction conversion of laser, then arranges focusing lens on the light-emitting direction of the second mirror, has effectively reduced semiconductor laser's length, and the installation of being convenient for is arranged.

Drawings

Fig. 1 is a schematic structural diagram of a semiconductor laser according to embodiment 1 of the present invention.

Fig. 2 is a schematic structural diagram of a semiconductor laser according to embodiment 2 of the present invention.

Fig. 3 is a schematic structural diagram of a semiconductor laser according to embodiment 3 of the present invention.

Fig. 4 is a schematic structural diagram of a semiconductor laser according to embodiment 4 of the present invention.

Fig. 5 is a schematic structural diagram of a semiconductor laser according to embodiment 5 of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention clearer, embodiments of the present invention will be further described below with reference to the accompanying drawings and examples.

Example 1:

referring to fig. 1, an embodiment 1 of the present invention provides a semiconductor laser, including a plurality of laser units 1, a first reflector 2, a second reflector 3, a fast-axis focusing lens 4, a slow-axis focusing lens 5, and an output optical fiber 6; in this embodiment, five laser units 1 are arranged in sequence from left to right, wherein each laser unit 1 includes a semiconductor laser single tube 11, a fast axis collimator 12, a slow axis collimator 13 and a third reflector 14, the slow axis collimator 13 is disposed in the light emitting direction of the fast axis collimator 12, the third reflector 14 is disposed in the light emitting direction of the slow axis collimator 13, the first reflector 2 is disposed in the light emitting direction of the third reflector 14, the second reflector 3 is disposed in the light emitting direction of the first reflector 2, the fast axis focusing lens 4 is disposed in the light emitting direction of the second reflector 3, and the slow axis focusing lens 5 is disposed in the light emitting direction of the fast axis focusing lens 4. The number of the laser units 1 is not limited to 5, and may be other numbers.

The bottom surface of the interior of the semiconductor laser shell is of a stepped surface structure, the bottom surface of the stepped surface structure comprises at least one stepped surface, each stepped surface is used for placing a semiconductor laser single tube 11, a fast axis collimating mirror 12, a slow axis collimating mirror 13 and a third reflecting mirror 14 of a laser unit 1, and the distance between the laser unit 1 and the incident surface of the output optical fiber 6 is in direct proportion to the height of the stepped surface, namely, the height of the stepped surface of the laser unit 1 which is closer to the incident surface of the output optical fiber 6 is lower, and the height of the stepped surface of the laser unit 1 which is farther from the incident surface of the output optical fiber 6 is higher, so that light spots output by the light path of each laser unit 1 cannot be superposed together and can be input to the first reflecting mirror 2. Referring to fig. 2, an area between the sequentially arranged fast axis collimating mirrors 12 and the sequentially arranged slow axis collimating mirrors 13 is an arrangement area 7, and a laser beam emitted by the five semiconductor laser single tubes 11 divides the arrangement area 7 from left to right into a first arrangement space 71, a second arrangement space 72, a third arrangement space 73, a fourth arrangement space 74, a fifth arrangement space 75, and a sixth arrangement space 76; in embodiment 1 of fig. 1, the fast axis focus lens 4 is provided in the fourth arrangement space 74, and the slow axis focus lens 5 is provided in the second arrangement space 72.

A layer of high-reflectivity dielectric film is plated on the first reflector 2, the second reflector 3 and the third reflector 14 so as to improve the reflectivity of incident light; the plurality of third reflecting mirrors 14 are arranged in order from the top to the bottom in the arrangement direction.

The fast axis focusing lens 4 is a spherical cylindrical lens or an aspheric cylindrical lens; the slow axis focusing lens 5 is a spherical cylindrical lens or an aspherical cylindrical lens.

The fast axis focusing lens 4 is a single cylindrical lens or a composite cylindrical lens; the slow-axis focusing lens 5 is a single cylindrical lens or a compound cylindrical lens.

The fast axis focusing lens 4 and the slow axis focusing lens 5 are two lenses independently or one device combined together.

The laser light of the plurality of laser units 1 is superimposed in any one or a combination of a plurality of ways: spatial superposition, polarization superposition, wavelength superposition. A fixed height difference (which may be 0.35mm, for example) is maintained between adjacent ones of the plurality of laser units 1. The semiconductor laser single tubes 11 of the plurality of laser units 1 are respectively and correspondingly arranged on the plurality of heat sinks which are distributed in a step shape.

The working process of the semiconductor laser of example 1 is: laser emitted by the semiconductor laser single tube 11 is collimated by the fast axis collimating mirror 12 and the slow axis collimating mirror 13 in sequence, reflected by the third reflecting mirror 14, reflected by the first reflecting mirror 2 and the second reflecting mirror 3 respectively, and then converted by 180 degrees in the light propagation direction, focused by the fast axis focusing lens 4 and the slow axis focusing lens 5, and coupled into the output optical fiber 5.

Example 2:

referring to fig. 2, the present embodiment 2 provides a semiconductor laser in which the fast axis focusing lens 4 is disposed in the sixth arrangement space 76; the rest of the structure is basically the same as that of embodiment 1.

Example 3:

referring to fig. 3, the present embodiment 3 provides a semiconductor laser, in which the fast axis focusing lens 4 is disposed in the sixth arrangement space 76, and the slow axis focusing lens 5 is disposed in the first arrangement space 71; the rest of the structure is basically the same as that of embodiment 1.

Example 4:

referring to fig. 4, the present embodiment 4 provides a semiconductor laser in which a fast axis focusing lens 4 is disposed in a fifth arrangement space 75, and a slow axis focusing lens 5 is disposed in a first arrangement space 71; the rest of the structure is basically the same as that of embodiment 1.

Referring to fig. 5, which is a schematic diagram of embodiment 5, in embodiment 5, both fast axis focusing and slow axis focusing of light are achieved by one focusing lens 40 disposed in the arrangement region 7, so that two focusing lenses are not required; further, in embodiment 5, the optical fiber fixing device 61 for fixing the optical fiber 6 is entirely extended into the housing of the semiconductor laser without being exposed outside the housing, thereby further reducing the size of the optical fiber fixing device outside the housing and also reducing the size; furthermore, if the distance between the adjacent single semiconductor laser tubes 11 is short, the laser emitted from the single semiconductor laser tube 11 is blocked by the corresponding arrangement region 7 if the fast-axis focusing lens 4, the slow-axis focusing lens 5 or the focusing lens 40 is placed in the corresponding arrangement region, at this time, the distance between the two adjacent single semiconductor laser tubes 11 is increased to form a gap 41, and the focusing lens can be installed at the corresponding position of the arrangement region 7, so that the laser is not blocked.

The positions of the fast-axis focusing lens 4, the slow-axis focusing lens 5 and the focusing lens 40 in the above embodiments are determined by the focusing characteristics thereof and the position of the incident surface of the output optical fiber 6, and are used for focusing the parallel light reflected by the second reflecting mirror 3 into the incident surface of the output optical fiber 6.

In this document, the terms front, back, upper and lower are used to define the components in the drawings and the positions of the components relative to each other, and are used for clarity and convenience of the technical solution. It is to be understood that the use of the directional terms should not be taken to limit the scope of the claims.

The features of the embodiments and embodiments described herein above may be combined with each other without conflict.

The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included within the protection scope of the present invention.

Claims

1. A semiconductor laser comprises a plurality of laser units, a first reflector, a second reflector, a focusing lens and an output optical fiber; the laser unit comprises a semiconductor laser single tube, a fast axis collimating mirror, a slow axis collimating mirror and a third reflecting mirror, the area between the fast axis collimating mirror and the slow axis collimating mirror is an arrangement area, the focusing lens is arranged in the arrangement area, laser emitted by the semiconductor laser single tube is converted into parallel laser beams after sequentially passing through the fast axis collimating mirror, the slow axis collimating mirror and the third reflecting mirror, the parallel laser beams are converted into 180 degrees of light propagation direction after sequentially passing through the first reflecting mirror and the second reflecting mirror for reflection, and then the parallel laser beams are focused through the focusing lens and then are coupled into the output optical fiber.

2. A semiconductor laser as claimed in claim 1 wherein the focusing lens is capable of fast axis focusing and slow axis focusing of light.

3. A semiconductor laser as claimed in claim 1 wherein the focusing lens comprises a slow axis focusing lens and a fast axis focusing lens.

4. A semiconductor laser as claimed in claim 1 further comprising a fiber holding device for holding the optical fiber, the fiber holding device extending entirely into the housing of the semiconductor laser without being exposed outside the housing.

5. A semiconductor laser as claimed in claim 1 wherein a gap is provided between two adjacent semiconductor laser monotubes corresponding to the position of the arrangement region where the focusing lens is mounted.