CN101854030A - Laser light source device of high-power semiconductor - Google Patents
Laser light source device of high-power semiconductor Download PDFInfo
- Publication number
- CN101854030A CN101854030A CN 201010161496 CN201010161496A CN101854030A CN 101854030 A CN101854030 A CN 101854030A CN 201010161496 CN201010161496 CN 201010161496 CN 201010161496 A CN201010161496 A CN 201010161496A CN 101854030 A CN101854030 A CN 101854030A
- Authority
- CN
- China
- Prior art keywords
- semiconductor laser
- repeatedly
- battle array
- laser
- right triangle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Laser Beam Processing (AREA)
Abstract
The invention relates to a laser light source device of a high-power semiconductor. A laser light source with high power, high light beam quality and small divergence angle is obtained by adopting a plurality of hectowatt-level laser stack array module through a beam binding technology and a beam expanding focusing technology. The laser light source device has light weight, small volume, high electro-optic conversion efficiency and long service life, overcomes the disadvantages of big volume, low energy efficiency, short service life and the like of chemical lasers, CO2 lasers and the fundamental frequency 1064nm Nd:YAG lasers of lamp pumps and semiconductor laser pumping and the like, realizes the high-power, high-brightness and high-quality direct input of the hectowatt-level lasers and can be directly applied to the field of laser processing. Under the condition of the same output power, the volume of a semiconductor laser is 1/3-1/10 the volume of other lasers, the operating cost thereof is 1/4-1/20 the costs of other lasers, and the service life thereof is 5-10 times the service lives of other lasers and can reach more than 10000 hours.
Description
Technical field
The present invention relates to a kind of power output can be up to last kilowatt laser light source device of high-power semiconductor.
Background technology
Because high power semiconductor lasers has advantages such as volume is little, in light weight, efficient is high, the life-span is long, be widely used in fields such as laser processing (punching, cutting, welding, Surface Machining, material modification etc.), laser medicine (diagnosis, treatment, operation, beauty treatment etc.), laser display and scientific research, become the comprehensive new and high technology that the new century development is fast, achievement is many, the subject infiltration is wide, range of application is big.
The CO that adopt in the laser processing at present more
2Laser, the fundamental frequency 1064nmNd:YAG laser of lamp pump and semiconductor laser pumping.
CO
2Laser is converted into laser energy by the heat energy with burning gases, realizes MW class output, but energy efficiency very low (1%-2%).Air supply system is heavy.
Solid state laser, lamp pump Nd:YAG laser electro-optical efficiency has only 3%, and in 1000 hours life-spans, efficient is low, the heat radiation difficulty.Though the solid state laser of diode-end-pumped (DPL) is higher than lamp pump solid state laser, volume also obviously reduces.But its electro-optical efficiency is still lower, only is equivalent to the 1/3-1/2 of semiconductor laser efficient.
The performance difference of lamp pump YAG laser and high-power semiconductor laser fiber coupling module such as table 1 (John M.Haake*and Mark S.Zediker Nuvonyx, Inc.HeatTreating and Cladding Operations with High-Power DiodeLasers.Proceedings of SPIE Vol.5706 (SPIE, Bellingham, WA, 2005).
Table 1
Summary of the invention
The problem to be solved in the present invention is to overcome the CO that adopt in the above-mentioned field of laser processing more
2Laser, shortcoming such as the volume of the fundamental frequency 1064nmNd:YAG laser of lamp pump and semiconductor laser pumping is big, energy efficiency is low, the life-span is short provides a kind of high-power output semiconductor laser light-source device, can be directly used in the laser processing equipment.
The laser light source device of high-power semiconductor that the present invention relates to adopts a plurality of hectowatt grade laser array module that changes, and by closing the bundle technology, expands the bundle focusing technology, obtains high-power, high light beam quality, small divergence angle LASER Light Source, thereby directly applies to field of laser processing.
As shown in Figure 1, laser light source device of high-power semiconductor provided by the invention by first semiconductor laser repeatedly battle array 1, second semiconductor laser repeatedly battle array 1 ', the 3rd semiconductor laser repeatedly battle array the 4, the 4th semiconductor laser repeatedly battle array 4 '; First fast axis collimation lens 2, second fast axis collimation lens 2 ', the 3rd fast axis collimation lens 5, the 4th fast axis collimation lens 5 '; The first slow axis collimating lens 3, the second slow axis collimating lens 3 ', the 3rd slow axis collimating lens 6, the 4th slow axis collimating lens 6 '; The first isosceles right triangle reflecting prism group 7, the second isosceles right triangle reflecting prism group 7 '; Half-wave plate 8; Rhombus polarization coupled prism 9; The focusing system 12 that beam-expanding system that the first post lens 10, the second post lens 11 are formed and cemented doublet are formed constitutes;
Described first fast axis collimation lens 2, second fast axis collimation lens 2 ', the 3rd fast axis collimation lens 5, the 4th fast axis collimation lens 5 ' place respectively first semiconductor laser repeatedly battle array 1, second semiconductor laser repeatedly battle array 1 ', the 3rd semiconductor laser battle array the 4, the 4th semiconductor laser battle array a 4 ' front portion repeatedly repeatedly, carry out fast axis collimation to reduce the fast axle angle of divergence;
The described first slow axis collimating lens 3, the second slow axis collimating lens 3 ', the 3rd slow axis collimating lens 6, the 4th slow axis collimating lens 6 ' place respectively first fast axis collimation lens 2, second fast axis collimation lens 2 ', the 3rd fast axis collimation lens 5, the 4th fast axis collimation lens 5 ' the front portion, carry out the slow axis collimation to reduce the slow axis angle of divergence;
Described first semiconductor laser repeatedly battle array 1, second semiconductor laser repeatedly battle array 1 ', the 3rd semiconductor laser repeatedly battle array the 4, the 4th semiconductor laser repeatedly battle array 4 ' formation identical, by a plurality of identical bar pile up form and polarization also identical; Bar is cross-directional length 10mm, by the semiconductor laser unit of tens to tens standards that luminous point is formed;
The repeatedly repeatedly battle array 1 ' vertical mutually placement of gust 1, second semiconductor laser of described first semiconductor laser, and in the laser quick shaft direction certain distance (see figure 2) that staggers, make win semiconductor laser repeatedly battle array 1 and second semiconductor laser repeatedly battle array 1 ' difference in height be 1/2nd of the height between two bar that constitute repeatedly gust;
First semiconductor laser is battle array 1 and the repeatedly battle array 4 parallel placements of the 3rd semiconductor laser repeatedly;
The 3rd semiconductor laser is battle array 4 and also repeatedly battle array 4 ' vertical placement of the 4th semiconductor laser repeatedly, and the laser quick shaft direction certain distance that also staggers, make win semiconductor laser repeatedly battle array 4 and second semiconductor laser repeatedly battle array 4 ' difference in height also be 1/2nd of the height between two bar that constitute repeatedly gust;
The described first isosceles right triangle reflecting prism 7 and the second isosceles right triangle reflecting prism 7 ' form spacing between each speculum thickness, speculum are arranged along the laser quick shaft direction by a plurality of isosceles right triangle speculums; The isosceles right triangle speculum is arranged along the laser quick shaft direction and is formed, and its height and semiconductor laser repeatedly battle array equate;
The described first isosceles right triangle reflecting prism group 7 and the second isosceles right triangle reflecting prism group 7 ' the hypotenuse plane of isosceles right triangle speculum all be coated with highly reflecting films;
The described first isosceles right triangle reflecting prism group 7 and the second isosceles right triangle reflecting prism group 7 ' the plane of right-angle side parallel respectively, the plane of a right-angle side of described two prisms group is staggered relatively with the first slow axis collimating lens 3, the 3rd slow axis collimating lens 6 respectively, make win semiconductor laser repeatedly battle array the 1, the 3rd semiconductor laser repeatedly battle array 4 laser respectively through the first isosceles right triangle reflecting prism group 7, the second isosceles right triangle reflecting prism group 7 ' the isosceles right triangle speculum between the direct transmission in space;
The described first isosceles right triangle reflecting prism group 7, the second isosceles right triangle reflecting prism group 7 ' the hypotenuse plane respectively with the second slow axis collimating lens 3 ', the 4th slow axis collimating lens 6 ' staggered relatively, and make laser beam and hypotenuse plane angle at 45, respectively with second semiconductor laser repeatedly battle array 1 ', the repeatedly laser beam reflection behind battle array 4 ' collimation of the 4th semiconductor laser, with half-twist angle, the laser beam direction of propagation; Then, the laser beam at described direct transmission laser bundle and half-twist angle, the direction of propagation realizes closing for the first time bundle;
Half-wave plate 8 places between the first isosceles right triangle reflecting prism group 7 and the rhombus polarization coupled prism 9, and half-wave plate 8 is relative with a face of rhombus polarization coupled prism 9; Above-mentioned realization is closed the laser beam of bundle for the first time by half-wave plate 8, after making the half-twist angle, polarization direction of this laser beam that closes bundle for the first time, a face by rhombus polarization coupled prism 9 enters into rhombus polarization coupled prism 9, through internal reflection, half-twist angle again, be coated with the b surface of polarizing coating to the surface, through the b face reflection output of rhombus devating prism 9;
Described the 3rd semiconductor laser is battle array the 4 and the 4th semiconductor laser battle array 4 ' close for the first time laser beam of bundle repeatedly repeatedly, and the b face that is coated with polarizing coating by rhombus devating prism 9 directly sees through rhombus devating prism 9;
The b face laser light reflected bundle that is coated with polarizing coating of described process rhombus devating prism 9 carries out closing the second time bundle with the laser beam of the b face transmission that is coated with polarizing coating of process rhombus devating prism 9;
The front of rhombus polarization coupled prism 9 is placed the focusing system 12 that the beam-expanding system be made up of the first post lens 10, the second post lens 11 and cemented doublet are formed in turn;
The laser beam that closes bundle the described second time is through beam-expanding system, and the focusing system of forming through cemented doublet 12 is assembled the laggard optical fiber transmission of going into again.
Introduce the laser transmission path below: through first semiconductor laser repeatedly battle array 1, second semiconductor laser repeatedly battle array 1 ', the 3rd semiconductor laser repeatedly battle array the 4, the 4th semiconductor laser repeatedly battle array 4 ' laser respectively through first fast axis collimation lens 2, second fast axis collimation lens 2 ', the 3rd fast axis collimation lens 5, the 4th fast axis collimation lens 5 ' carry out fast axis collimation to reduce the fast axle angle of divergence; Then respectively through the first slow axis collimating lens 3, the second slow axis collimating lens 3 ', the 3rd slow axis collimating lens 6, the 4th slow axis collimating lens 6 ' collimation, to reduce the slow axis angle of divergence;
First semiconductor laser repeatedly battle array 1, second semiconductor laser repeatedly battle array 1 ' through the light beam after 7 couplings of the first isosceles right triangle reflecting prism group, realize the transformation of light beam polarization state again through half-wave plate 8, change a face of back light beam vertical incidence to rhombic prism 9, and internal reflection takes place to the b face, the b face of rhombic prism 9 is coated with the reflection of polarization film, the light beam that changes polarization state through half-wave plate 8 can be reflected;
The 3rd semiconductor laser is battle array the 4, the 4th semiconductor laser battle array 4 ' through the laser beam after the second isosceles right triangle reflecting prism group 7 ' coupling repeatedly repeatedly, the rhombic prism 9 direct transmissions through being coated with reflection of polarization film b face;
Above-mentioned reflection lasering beam and transmission laser bundle finally close bundle together; Assemble output through the beam-expanding system of the first post lens 10, the second post lens, 11 compositions with by the focusing system 12 that cemented doublet is formed.
Beneficial effect: a kind of laser light source device of high-power semiconductor of the present invention, it is in light weight, volume is little, electro-optical efficiency is high, the life-span is long, overcome chemical laser, the CO2 laser, the shortcoming that the Nd:YAG fundamental frequency 1064nm equal-volume of lamp pump and semiconductor laser pumping is big, energy efficiency is low, the life-span is short etc., realized that high-power, the high brightness high-quality of multikilowatt laser directly export, can directly apply to field of laser processing.Under the identical situation of power output, the semiconductor laser volume is 1/3～1/10 of other lasers, and operation cost is 1/4～1/20 of his laser, and the life-span is 5～10 times of other lasers, reaches more than 10000 hours.
Description of drawings
Fig. 1 is multikilowatt processing semicondcutor laser unit structural representation.
Fig. 2 is semiconductor laser repeatedly battle array 1,1 ' position and difference in height schematic diagram.
Fig. 3 polarization coupled rhombic prism structural representation.
Fig. 4 realizes closing for the first time the schematic diagram of the laser beam of bundle.
Embodiment
As shown in Figure 1, laser light source device of high-power semiconductor provided by the invention by first semiconductor laser repeatedly battle array 1, second semiconductor laser repeatedly battle array 1 ', the 3rd semiconductor laser repeatedly battle array the 4, the 4th semiconductor laser repeatedly battle array 4 '; First fast axis collimation lens 2, second fast axis collimation lens 2 ', the 3rd fast axis collimation lens 5, the 4th fast axis collimation lens 5 '; The first slow axis collimating lens 3, the second slow axis collimating lens 3 ', the 3rd slow axis collimating lens 6, the 4th slow axis collimating lens 6 '; The first isosceles right triangle reflecting prism 7, the second isosceles right triangle reflecting prism 7 '; Half-wave plate 8; Rhombus polarization coupled prism 9; The focusing system 12 that beam-expanding system that the first post lens 10, the second post lens 11 are formed and cemented doublet are formed constitutes;
Described first fast axis collimation lens 2, second fast axis collimation lens 2 ', the 3rd fast axis collimation lens 5, the 4th fast axis collimation lens 5 ' place respectively first semiconductor laser repeatedly battle array 1, second semiconductor laser repeatedly battle array 1 ', the 3rd semiconductor laser battle array the 4, the 4th semiconductor laser battle array a 4 ' front portion repeatedly repeatedly, carry out fast axis collimation to reduce the fast axle angle of divergence;
The described first slow axis collimating lens 3, the second slow axis collimating lens 3 ', the 3rd slow axis collimating lens 6, the 4th slow axis collimating lens 6 ' place respectively first fast axis collimation lens 2, second fast axis collimation lens 2 ', the 3rd fast axis collimation lens 5, the 4th fast axis collimation lens 5 ' the front portion, carry out the slow axis collimation to reduce the slow axis angle of divergence;
Described first semiconductor laser repeatedly battle array 1, second semiconductor laser repeatedly battle array 1 ', the 3rd semiconductor laser repeatedly battle array the 4, the 4th semiconductor laser repeatedly battle array 4 ' formation identical, all semiconductor laser light resources are the 808nm semiconductor laser that polarization state is the p polarization, the bar that all repeatedly battle arrays are 1.9mm by 5 spacings forms, and the power output of each battle array that changes is 400W;
The repeatedly repeatedly battle array 1 ' vertical mutually placement of gust 1, second semiconductor laser of described first semiconductor laser, and in the laser quick shaft direction certain distance (see figure 2) that staggers, make win semiconductor laser repeatedly battle array 1 and second semiconductor laser repeatedly battle array 1 ' difference in height be 1/2nd of the height between two bar that constitute repeatedly gust;
First semiconductor laser is battle array 1 and the repeatedly battle array 4 parallel placements of the 3rd semiconductor laser repeatedly;
The 3rd semiconductor laser is battle array 4 and also repeatedly battle array 4 ' vertical placement of the 4th semiconductor laser repeatedly, and the laser quick shaft direction certain distance that also staggers, make win semiconductor laser repeatedly battle array 4 and second semiconductor laser repeatedly battle array 4 ' difference in height also be 1/2nd of the height between two bar that constitute repeatedly gust;
The described first isosceles right triangle reflecting prism 7 and the second isosceles right triangle reflecting prism 7 ' the be identical isosceles right triangle speculum of multi-disc is arranged along the laser quick shaft direction and is formed; The number of isosceles right triangle speculum, the distance and the thickness of each speculum is according to the number decision of bar in the laser alternating array between the speculum, make win isosceles right triangle reflecting prism 7 and the second isosceles right triangle reflecting prism 7 ' height and each semiconductor laser height repeatedly gust equate;
The described first isosceles right triangle reflecting prism 7 and the second isosceles right triangle reflecting prism 7 ' the hypotenuse plane all be coated with highly reflecting films;
The described first isosceles right triangle reflecting prism group 7 and the second isosceles right triangle reflecting prism group 7 ' the plane of right-angle side parallel respectively, the plane of a right-angle side of described two prisms group is staggered relatively with the first slow axis collimating lens 3, the 3rd slow axis collimating lens 6 respectively, make win semiconductor laser repeatedly battle array the 1, the 3rd semiconductor laser repeatedly battle array 4 laser respectively through the first isosceles right triangle reflecting prism group 7, the second isosceles right triangle reflecting prism group 7 ' the isosceles right triangle speculum between the direct transmission in space;
The described first isosceles right triangle reflecting prism group 7, the second isosceles right triangle reflecting prism group 7 ' the hypotenuse plane respectively with the second slow axis collimating lens 3 ', the 4th slow axis collimating lens 6 ' staggered relatively, and make laser beam and hypotenuse plane angle at 45, respectively with second semiconductor laser repeatedly battle array 1 ', the repeatedly laser beam reflection behind battle array 4 ' collimation of the 4th semiconductor laser, with half-twist angle, the laser beam direction of propagation; Then, the laser beam at described direct transmission laser bundle and half-twist angle, the direction of propagation realizes closing for the first time bundle;
Half-wave plate 8 places between the first isosceles right triangle reflecting prism group 7 and the rhombus polarization coupled prism 9, and half-wave plate 8 is relative with a face of rhombus polarization coupled prism 9; Above-mentioned realization is closed the laser beam of bundle for the first time by half-wave plate 8, after making the half-twist angle, polarization direction of this laser beam that closes bundle for the first time, a face by rhombus polarization coupled prism 9 enters into rhombus polarization coupled prism 9, through internal reflection, half-twist angle again, be coated with the b surface of polarizing coating to the surface, through the b face reflection output of rhombus devating prism 9;
Described the 3rd semiconductor laser is battle array the 4 and the 4th semiconductor laser battle array 4 ' close for the first time laser beam of bundle repeatedly repeatedly, and the b face that is coated with polarizing coating by rhombus devating prism 9 directly sees through rhombus devating prism 9;
The b face laser light reflected bundle that is coated with polarizing coating of described process rhombus devating prism 9 carries out closing the second time bundle with the laser beam of the b face transmission that is coated with polarizing coating of process rhombus devating prism 9;
Close for the second time laser beam light beam behind the bundle and be incident to the focusing system 12 that the beam-expanding system is made up of the first post lens 10, the second post lens 11 and cemented doublet are formed, focusing system 12 convergences of forming through cemented doublet are laggard again goes into optical fiber and transmits.
Claims (1)
1. repeatedly gust (1), second semiconductor laser change gust (1 ') laser light source device of high-power semiconductor, the 3rd semiconductor laser changes battle array (4), the 4th semiconductor laser changes gust (4 ') by first semiconductor laser; First fast axis collimation lens (2), second fast axis collimation lens (2 '), the 3rd fast axis collimation lens (5), the 4th fast axis collimation lens (5 '); The first slow axis collimating lens (3), the second slow axis collimating lens (3 '), the 3rd slow axis collimating lens (6), the 4th slow axis collimating lens (6 '); The first isosceles right triangle reflecting prism group (7), the second isosceles right triangle reflecting prism group (7 '); Half-wave plate (8); Rhombus polarization coupled prism (9); The focusing system (12) that beam-expanding system that the first post lens (10), the second post lens (11) are formed and cemented doublet are formed constitutes;
Described first fast axis collimation lens (2), second fast axis collimation lens (2 '), the 3rd fast axis collimation lens (5), the 4th fast axis collimation lens (5 ') place first semiconductor laser to change gust (1) respectively, second semiconductor laser changes battle array (1 '), the 3rd semiconductor laser changes gust (4), the 4th semiconductor laser changes gust (4 ') front portion, carry out fast axis collimation to reduce the fast axle angle of divergence;
The described first slow axis collimating lens (3), the second slow axis collimating lens (3 '), the 3rd slow axis collimating lens (6), the 4th slow axis collimating lens (6 ') place the front portion of first fast axis collimation lens (2), second fast axis collimation lens (2 '), the 3rd fast axis collimation lens (5), the 4th fast axis collimation lens (5 ') respectively, carry out the slow axis collimation to reduce the slow axis angle of divergence;
Described first semiconductor laser repeatedly battle array (1), second semiconductor laser repeatedly battle array (1 '), the 3rd semiconductor laser repeatedly battle array (4), the 4th semiconductor laser repeatedly the formation of battle array (4 ') is identical, by a plurality of identical bar pile up form and polarization also identical; Bar is cross-directional length 10mm, by the semiconductor laser unit of tens to tens standards that luminous point is formed;
The repeatedly repeatedly vertical mutually placement of battle array (1 ') of gust (1), second semiconductor laser of described first semiconductor laser, and at the laser quick shaft direction certain distance that staggers, make win semiconductor laser repeatedly battle array (1) and second semiconductor laser repeatedly the difference in height of battle array (1 ') be 1/2nd of the height between two bar that constitute repeatedly gust;
First semiconductor laser is battle array (1) and repeatedly battle array (4) the parallel placement of the 3rd semiconductor laser repeatedly;
The 3rd semiconductor laser is battle array (4) and also repeatedly battle array (4 ') vertical placement of the 4th semiconductor laser repeatedly, and the laser quick shaft direction certain distance that also staggers, make win semiconductor laser repeatedly battle array (4) and second semiconductor laser repeatedly the difference in height of battle array (4 ') also be 1/2nd of the height between two bar that constitute repeatedly gust;
The described first isosceles right triangle reflecting prism group (7) rearranges along the laser quick shaft direction by a plurality of identical isosceles right triangle speculums with the second isosceles right triangle reflecting prism group (7 ');
The hypotenuse plane of the isosceles right triangle speculum of the described first isosceles right triangle reflecting prism group 7 and the second isosceles right triangle reflecting prism group (7 ') all is coated with highly reflecting films;
The plane of the described first isosceles right triangle reflecting prism group (7) and the right-angle side of the second isosceles right triangle reflecting prism group (7 ') is parallel respectively, the plane of a right-angle side of described two prisms group respectively with the first slow axis collimating lens (3), the 3rd slow axis collimating lens (6) is staggered relatively, makes the repeatedly battle array (1) of semiconductor laser of winning, the 3rd semiconductor laser repeatedly the laser of battle array (4) respectively through the first isosceles right triangle reflecting prism group (7), the second isosceles right triangle reflecting prism group (7) ' the isosceles right triangle speculum between the direct transmission in space;
The hypotenuse plane of the described first isosceles right triangle reflecting prism group (7), the second isosceles right triangle reflecting prism group (7 ') is staggered relatively with the second slow axis collimating lens (3 '), the 4th slow axis collimating lens (6 ') respectively, and make laser beam and hypotenuse plane angle at 45, respectively with the repeatedly repeatedly laser beam reflection behind battle array (4 ') collimation of battle array (1 '), the 4th semiconductor laser of second semiconductor laser, with half-twist angle, the laser beam direction of propagation; Then, the laser beam at described direct transmission laser bundle and half-twist angle, the direction of propagation realizes closing for the first time bundle;
Half-wave plate (8) places between the first isosceles right triangle reflecting prism group (7) and the rhombus polarization coupled prism (9), and half-wave plate (8) is relative with a face of rhombus polarization coupled prism (9); Above-mentioned realization is closed the laser beam of bundle for the first time by half-wave plate (8), after making the half-twist angle, polarization direction of this laser beam that closes bundle for the first time, a face by rhombus polarization coupled prism (9) enters into rhombus polarization coupled prism (9), through internal reflection, half-twist angle again, be coated with the b surface of polarizing coating to the surface, through the b face reflection output of rhombus devating prism (9);
Described the 3rd semiconductor laser repeatedly battle array (4) and the 4th semiconductor laser repeatedly battle array (4 ') close the laser beam of bundle for the first time, the b face that is coated with polarizing coating by rhombus devating prism (9) is directly through rhombus devating prism (9);
The described b face laser light reflected bundle that is coated with polarizing coating through rhombus devating prism (9) carries out closing the second time bundle with laser beam through the b face transmission that is coated with polarizing coating of rhombus devating prism (9);
The front of rhombus polarization coupled prism (9) is placed the focusing system (12) that the beam-expanding system be made up of the first post lens (10), the second post lens (11) and cemented doublet are formed in turn;
The laser beam that closes bundle the described second time is through beam-expanding system, and the focusing system of forming through cemented doublet (12) is assembled the laggard optical fiber transmission of going into again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010161496 CN101854030A (en) | 2010-05-04 | 2010-05-04 | Laser light source device of high-power semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010161496 CN101854030A (en) | 2010-05-04 | 2010-05-04 | Laser light source device of high-power semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101854030A true CN101854030A (en) | 2010-10-06 |
Family
ID=42805348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010161496 Pending CN101854030A (en) | 2010-05-04 | 2010-05-04 | Laser light source device of high-power semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101854030A (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324697A (en) * | 2011-09-22 | 2012-01-18 | 西安炬光科技有限公司 | Interpolation-arrangement beam-combining method for semiconductor laser and high-power semiconductor laser |
| CN102566075A (en) * | 2011-11-22 | 2012-07-11 | 北京凯普林光电科技有限公司 | Polarization rotating device as well as polarization beam combining method and system of laser |
| CN102904161A (en) * | 2012-09-27 | 2013-01-30 | 夏云 | High-power integrated laser light source |
| CN102914872A (en) * | 2012-11-20 | 2013-02-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | Device for shaping and collimating elliptic laser spots of semiconductor lasers |
| CN103579905A (en) * | 2013-11-11 | 2014-02-12 | 西北大学 | Space overlaid and coupled high-power semiconductor laser stack array system |
| CN103592766A (en) * | 2013-10-28 | 2014-02-19 | 华中科技大学 | Optical module for improving brightness of lasers and high-frequency pulse laser source |
| CN108302465A (en) * | 2016-09-30 | 2018-07-20 | 长城汽车股份有限公司 | Laser assisted far lighting module |
| CN109061665A (en) * | 2018-08-10 | 2018-12-21 | 江苏亮点光电科技有限公司 | A kind of low fever multi-laser high frequency range-measurement system |
| WO2019132441A1 (en) * | 2017-12-28 | 2019-07-04 | (주)유남옵틱스 | Line beam forming apparatus |
| WO2020098413A1 (en) * | 2018-11-14 | 2020-05-22 | 西安炬光科技股份有限公司 | Pumping module and solid-state laser having same |
| CN112202047A (en) * | 2020-09-23 | 2021-01-08 | 广东粤港澳大湾区硬科技创新研究院 | Laser device |
| CN112636158A (en) * | 2021-03-05 | 2021-04-09 | 深圳市星汉激光科技股份有限公司 | Semiconductor laser with double-layer optical path |
| CN114498279A (en) * | 2022-04-07 | 2022-05-13 | 北京卓镭激光技术有限公司 | Laser device and system for metal surface strengthening |
| CN115173219A (en) * | 2022-08-15 | 2022-10-11 | 北京工业大学 | High-brightness semiconductor laser module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5138491A (en) * | 1988-08-26 | 1992-08-11 | Fuji Photo Film Co., Ltd. | Beam-combining laser beam source device |
| US20070291813A1 (en) * | 2006-06-15 | 2007-12-20 | Newport Corporation | Coupling devices and methods for stacked laser emitter arrays |
| CN101369716A (en) * | 2008-09-25 | 2009-02-18 | 中国科学院长春光学精密机械与物理研究所 | High power light beam coupling semiconductor laser |
| CN201199288Y (en) * | 2007-11-14 | 2009-02-25 | 中国科学院长春光学精密机械与物理研究所 | Light beam coupling apparatus capable of implementing high-power semiconductor laser array using rectangular prism set |
-
2010
- 2010-05-04 CN CN 201010161496 patent/CN101854030A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5138491A (en) * | 1988-08-26 | 1992-08-11 | Fuji Photo Film Co., Ltd. | Beam-combining laser beam source device |
| US20070291813A1 (en) * | 2006-06-15 | 2007-12-20 | Newport Corporation | Coupling devices and methods for stacked laser emitter arrays |
| CN201199288Y (en) * | 2007-11-14 | 2009-02-25 | 中国科学院长春光学精密机械与物理研究所 | Light beam coupling apparatus capable of implementing high-power semiconductor laser array using rectangular prism set |
| CN101369716A (en) * | 2008-09-25 | 2009-02-18 | 中国科学院长春光学精密机械与物理研究所 | High power light beam coupling semiconductor laser |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324697A (en) * | 2011-09-22 | 2012-01-18 | 西安炬光科技有限公司 | Interpolation-arrangement beam-combining method for semiconductor laser and high-power semiconductor laser |
| CN102566075A (en) * | 2011-11-22 | 2012-07-11 | 北京凯普林光电科技有限公司 | Polarization rotating device as well as polarization beam combining method and system of laser |
| CN102904161A (en) * | 2012-09-27 | 2013-01-30 | 夏云 | High-power integrated laser light source |
| CN102904161B (en) * | 2012-09-27 | 2014-08-13 | 夏云 | High-power integrated laser light source |
| CN102914872A (en) * | 2012-11-20 | 2013-02-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | Device for shaping and collimating elliptic laser spots of semiconductor lasers |
| CN103592766B (en) * | 2013-10-28 | 2016-01-13 | 华中科技大学 | A kind of optical module for strengthening laser brightness and high-frequency pulsed lasers light source |
| CN103592766A (en) * | 2013-10-28 | 2014-02-19 | 华中科技大学 | Optical module for improving brightness of lasers and high-frequency pulse laser source |
| CN103579905B (en) * | 2013-11-11 | 2016-02-10 | 西北大学 | Space overlapping coupling high-power semiconductor laser folds array 1 system |
| CN103579905A (en) * | 2013-11-11 | 2014-02-12 | 西北大学 | Space overlaid and coupled high-power semiconductor laser stack array system |
| CN108302465A (en) * | 2016-09-30 | 2018-07-20 | 长城汽车股份有限公司 | Laser assisted far lighting module |
| WO2019132441A1 (en) * | 2017-12-28 | 2019-07-04 | (주)유남옵틱스 | Line beam forming apparatus |
| CN109061665A (en) * | 2018-08-10 | 2018-12-21 | 江苏亮点光电科技有限公司 | A kind of low fever multi-laser high frequency range-measurement system |
| WO2020098413A1 (en) * | 2018-11-14 | 2020-05-22 | 西安炬光科技股份有限公司 | Pumping module and solid-state laser having same |
| CN112202047A (en) * | 2020-09-23 | 2021-01-08 | 广东粤港澳大湾区硬科技创新研究院 | Laser device |
| CN112636158A (en) * | 2021-03-05 | 2021-04-09 | 深圳市星汉激光科技股份有限公司 | Semiconductor laser with double-layer optical path |
| CN114498279A (en) * | 2022-04-07 | 2022-05-13 | 北京卓镭激光技术有限公司 | Laser device and system for metal surface strengthening |
| CN115173219A (en) * | 2022-08-15 | 2022-10-11 | 北京工业大学 | High-brightness semiconductor laser module |
| CN115173219B (en) * | 2022-08-15 | 2024-04-12 | 北京工业大学 | High-brightness semiconductor laser module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101854030A (en) | Laser light source device of high-power semiconductor | |
| CN101854031A (en) | Laser device for realizing semiconductor laser beam coupling of parallel plate prism combination | |
| CN100576666C (en) | High power light beam coupling semiconductor laser | |
| CN100546131C (en) | Multi-channel optical fibre laser coherence beam combination device and coherent beam combination method based on overlapping body grating | |
| CN102436065B (en) | Method and device for simultaneously generating and amplifying hollow beams through liquid core optical fiber | |
| CN104007558A (en) | Semiconductor laser polarization beam combining device and coupling method | |
| CN101814695B (en) | Directly-pumping self-stimulated Raman scattering human eye safe waveband laser | |
| CN102684051B (en) | Disc laser amplifier | |
| CN103944067B (en) | A kind of high-power semiconductor laser closes beam system | |
| WO2015096114A1 (en) | Large-aperture laser amplifier side-pumped by multiple-dimensional laser diode stack | |
| CN103532015A (en) | High-power semiconductor laser light source system for laser processing | |
| CN204088871U (en) | A kind of storied placement passive heat radiation diode laser spectrum synthesizing optical device | |
| CN103219648A (en) | Optical fiber coupling system of laser light source | |
| CN203909406U (en) | Polarization beam-combining device of semiconductor laser | |
| CN101854029A (en) | Semiconductor laser light supply apparatus for laser cladding | |
| CN203012245U (en) | Beam coupling and focusing device for laser diode array | |
| CN102299464A (en) | Microchip solid state laser | |
| CN208752315U (en) | Semiconductor laser spectrum beam combination device | |
| CN208316016U (en) | Annular chamber amplifying device for picosecond seed laser pulse | |
| CN103887707B (en) | A kind of semiconductor laser with high-power high light beam quality laser | |
| CN103944052A (en) | Amplifier structure | |
| CN104124606A (en) | Laser amplification structure | |
| CN109510056A (en) | A kind of while output the hollow laser of dual wavelength | |
| CN202629628U (en) | Light source | |
| CN101369717B (en) | Multi-light beam coupling high power semiconductor laser unit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20101006 |