CN208316016U - Annular chamber amplifying device for picosecond seed laser pulse - Google Patents
Annular chamber amplifying device for picosecond seed laser pulse Download PDFInfo
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- CN208316016U CN208316016U CN201820799075.4U CN201820799075U CN208316016U CN 208316016 U CN208316016 U CN 208316016U CN 201820799075 U CN201820799075 U CN 201820799075U CN 208316016 U CN208316016 U CN 208316016U
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- 238000005086 pumping Methods 0.000 claims abstract description 77
- 239000013078 crystal Substances 0.000 claims abstract description 64
- 230000003287 optical effect Effects 0.000 claims abstract description 48
- 238000002347 injection Methods 0.000 claims abstract description 7
- 239000007924 injection Substances 0.000 claims abstract description 7
- 230000010287 polarization Effects 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 9
- 230000005855 radiation Effects 0.000 claims description 8
- 239000000498 cooling water Substances 0.000 claims description 3
- 239000000835 fiber Substances 0.000 claims description 3
- 239000013307 optical fiber Substances 0.000 claims description 3
- 229910009372 YVO4 Inorganic materials 0.000 claims 1
- 239000000571 coke Substances 0.000 claims 1
- 238000005457 optimization Methods 0.000 description 11
- 239000000243 solution Substances 0.000 description 9
- 230000008901 benefit Effects 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910017502 Nd:YVO4 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
A kind of annular chamber amplifying device for picosecond seed laser pulse, including a picosecond seed source, polarizing beam splitter mirror, first to third plane mirror, the four corners that polarizing beam splitter mirror, first are successively separately positioned on annular optical path to third plane mirror, picosecond seed source are located at the light beam injection end of polarizing beam splitter mirror；It is equipped with first laser crystal in optical path between first, second plane mirror, is equipped with second laser crystal in the optical path between second and third plane mirror；Light beam institute is respectively symmetrically equipped with the first, second pumping source on straight line between the first, second plane mirror of outer lateral edge of first, second plane mirror, and the focal spot of the first, second pumping source coincides in first laser crystal；Light beam institute is respectively symmetrically equipped with third, the 4th pumping source on straight line between second and the outer lateral edge of third plane mirror second, third plane mirror, third, the 4th pumping source focal spot coincide in second laser crystal.Utility model device gain amplifier is high, output power stability is good, output facula quality is high.
Description
Technical field
The present invention relates to picosecond laser amplifying technique fields, and in particular to a kind of annular for picosecond seed laser pulse
Chamber amplifying device.
Background technique
Solid state laser has many advantages, such as that high brightness, high efficiency, compact-sized, performance is stable, long-life and all solidstate,
The fields such as material processing, medical treatment, scientific research, military affairs have important application.
Picosecond laser has the advantage of " cold working " since pulse is narrow in terms of material processing, realizes structure cylinder
List, compact appearance, low-cost high power, high brightness full-solid-state pico-second laser device be solid state laser field research heat
One of point.However, being limited to fuel factor damage caused by SESAM semiconductor saturated absorption mirror, output power is usually limited
In~10mW magnitude, it is just unable to satisfy the use demand of high request in this way.
Summary of the invention
The present invention in order to solve the above problems existing in the present technology, provides a kind of for picosecond seed laser pulse
Annular chamber amplifying device is limited to fuel factor caused by SESAM semiconductor saturated absorption mirror to solve existing picosecond laser
Damage, output power is typically limited to~10mW magnitude the problem of.
To achieve the above object, the present invention provides a kind of annular chamber amplifying device for picosecond seed laser pulse,
Including a picosecond seed source, polarizing beam splitter mirror, the first plane mirror, the second plane mirror and third plane mirror, in which:
The polarizing beam splitter mirror, the first plane mirror, the second plane mirror and third plane mirror are successively separately positioned in four sides
Annular optical path four corners, described picosecond of seed source be located at the light beam injection end of polarizing beam splitter mirror for polarizing beam splitter mirror
Seed injection light；
First laser crystal, second plane mirror are equipped in optical path between first plane mirror and the second plane mirror
Second laser crystal is equipped in optical path between third plane mirror；
Light between the outside of first plane mirror and the first plane mirror of outer lateral edge of the second plane mirror and the second plane mirror
Beam institute is respectively symmetrically equipped with the first pumping source and the second pumping source, the focal spot of first pumping source and the second pumping on straight line
The focal spot in source coincides in first laser crystal；
Light beam between the second plane mirror outside and the second plane mirror of outer lateral edge and third plane mirror of third plane mirror
Institute is respectively symmetrically equipped with third pumping source and the 4th pumping source, the focal spot and the 4th pumping source of the third pumping source on straight line
Focal spot coincide in second laser crystal；
The described picosecond of optical path between seed source and polarizing beam splitter mirror be equipped with the first half-wave plate, the polarizing beam splitter mirror with
The second half-wave plate and the first condenser lens, the third are successively arranged along beam Propagation direction in optical path between first plane mirror
The second condenser lens and third half-wave plate are successively arranged along beam Propagation direction in the optical path of plane mirror and polarizing beam splitter mirror.
As present invention further optimization technical solution, in the optical path between first pumping source and the first plane mirror
It is additionally provided with the first lens group, the second lens group is additionally provided in the optical path between second pumping source and the second plane mirror, it is described
The third lens group, the 4th pumping source and third plane mirror are additionally provided in optical path between third pumping source and the second plane mirror
Between optical path on be additionally provided with the 4th lens group.
As present invention further optimization technical solution, first pumping source, the second pumping source, third pumping source and
4th pumping source is semiconductor diode pump source, and the wavelength in semiconductor diode pump source is 808nm or 88Xnm, is used for
The fibre core for the output optical fibre that first pumping source, the second pumping source, third pumping source and the 4th pumping source export is 200~400um.
As present invention further optimization technical solution, the first laser crystal and second laser crystal are to have
The laser crystal of linearly polarized radiation property, model Nd:YVO4 or Nd:GVO4.
As present invention further optimization technical solution, the first laser crystal and second laser crystal are in 45 °
It places.
As present invention further optimization technical solution, the first laser crystal and second laser crystal are coated with pump
Pu light anti-reflection film and seed light anti-reflection film.
As present invention further optimization technical solution, also connect on the first laser crystal and second laser crystal
It is connected to recirculated cooling water.
As present invention further optimization technical solution, the seed light in first plane mirror and respective optical path is incident
Light beam and seed light the reflected beams are in 45° angle respectively, seed light incident beam and kind in the second plane mirror and respective optical path
Sub-light the reflected beams are in 45° angle respectively, and the seed light incident beam and seed light in third plane mirror and respective optical path reflect
Light beam is in 45° angle respectively.
As present invention further optimization technical solution, first plane mirror, the second plane mirror and third plane mirror
It is coated with pump light anti-reflection film and seed light high-reflecting film.
As present invention further optimization technical solution, the first half-wave plate, the second half-wave plate, third half-wave plate, first
Condenser lens and the second condenser lens are coated with seed light anti-reflection film.
Annular chamber amplifying device for picosecond seed laser pulse of the invention can achieve it is following the utility model has the advantages that
1) present invention is a modular picosecond of seed light enlarged structure, for different output power, polarization state, pulsewidth
Picosecond seed source it is applicable；
2) present invention utilizes the both-end pumping structure and annular chamber enlarged structure of laser crystal, greatly improves pump light
The gain amplifier of transfer efficiency and seed light；
3) in the device of the invention, seed can be optimized by adjusting the first condenser lens, first to fourth lens group
The pattern match of light hot spot and pump light hot spot, operability are good；
4) in the device of the invention, seed light can be matched by adjusting the second half-wave plate and first laser crystal radiates
The consistency of light polarization direction；
5) in the device of the invention, amplified seed light can be adjusted by polarization beam splitting by adjusting third half-wave plate
The watt level that mirror transmits away；
6) in the device of the invention, seed light can be realized by optimizing the pump power of first to fourth pipe pumping source
Best amplification effect.
Detailed description of the invention
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
Fig. 1 is the structural representation for the example that the present invention is provided for the annular chamber amplifying device of picosecond seed laser pulse
Figure；
Fig. 2 is the light path principle figure shown in Fig. 1 for the annular chamber amplifying device of picosecond seed laser pulse；
Fig. 3 is the polarization theory figure of seed light.
In figure: 1, picosecond seed source, the 2, first half-wave plate, 3, polarizing beam splitter mirror, the 4, second half-wave plate, 5, first focuses thoroughly
Mirror, the 6, first plane mirror, 7, first laser crystal, the 8, second plane mirror, 9, second laser crystal, 10, third plane mirror, 11,
Second condenser lens, 12, third half-wave plate, the 13, first pumping source, the 14, first lens group, the 15, second pumping source, 16, second
Lens group, 17, third pumping source, 18, the third lens group, the 19, the 4th pumping source, the 20, the 4th lens group.
The object of the invention is realized, the embodiments will be further described with reference to the accompanying drawings for functional characteristics and advantage.
Specific embodiment
Below in conjunction with attached drawing and specific embodiment, the present invention is described further.Drawn in preferred embodiment
Such as "upper", "lower", "left", "right", " centre " and " one " term, only being illustrated convenient for narration, rather than to limit
The enforceable range of the present invention, relativeness are altered or modified, under the content of no substantial changes in technology, when being also considered as this hair
Bright enforceable scope.
As shown in Figure 1, the annular chamber amplifying device for picosecond seed laser pulse includes picosecond seed source 1, polarization point
Beam mirror 3, the first plane mirror 6, the second plane mirror 8 and third plane mirror 10, in which:
The polarizing beam splitter mirror 3, the first plane mirror 6, the second plane mirror 8 and third plane mirror 10 are successively separately positioned on and are in
The four corners of the annular optical path on four sides, described picosecond of seed source 1 are located at the light beam injection end of polarizing beam splitter mirror 3 to be used for polarization
3 seed injection light of beam splitter；
First laser crystal 7 is equipped in optical path between first plane mirror 6 and the second plane mirror 8, described second is flat
Second laser crystal 9 is equipped in optical path between face mirror 8 and third plane mirror 10；
Outer lateral edge the first plane mirror 6 and the second plane mirror 8 of the outside of first plane mirror 6 and the second plane mirror 8 it
Between light beam institute on straight line respectively symmetrically be equipped with the first pumping source 13 and the second pumping source 15, the focal spot of first pumping source 13
It is coincided in first laser crystal 7 with the focal spot of the second pumping source 15；
The second plane mirror of outer lateral edge 8 and third plane mirror 10 of second plane mirror, 8 outside and third plane mirror 10 it
Between light beam institute on straight line respectively symmetrically be equipped with third pumping source 17 and the 4th pumping source 19, the focal spot of the third pumping source 17
It is coincided in second laser crystal 9 with the focal spot of the 4th pumping source 19；
Optical path between described picosecond of seed source 1 and polarizing beam splitter mirror 3 is equipped with the first half-wave plate 2, the polarization beam splitting
It is successively arranged the second half-wave plate 4 and the first condenser lens 5 along beam Propagation direction in optical path between mirror 3 and the first plane mirror 6,
The third plane mirror 10 is successively arranged the second condenser lens 11 and the along beam Propagation direction in the optical path of polarizing beam splitter mirror 3
Three half-wave plates 12.
In the device of the invention, as shown in Fig. 2, picosecond seed optical transport optical circuit path that picosecond seed source 1 exports is as follows:
Seed light first passes through the first half-wave plate 2, and the polarization direction to rotate seed light is parallel polarization；Parallel polarization
Seed light injects polarizing beam splitter mirror 3, which filters out vertical polarization to the seed light through parallel polarization direction
Seed light；The second half-wave plate 4 is reached through the seed light of polarizing beam splitter mirror 3 out, seed light polarization direction is rotated 45 °；
The seed light of 45 ° of rotation makes a call to the first plane mirror 6 using incident after the focusing of the first condenser lens 5；First plane mirror 6 and incidence
Light is used to reflect seed light and transmit pump light in 45 ° of placements；The seed light that first plane mirror 6 swashs reflection swashs by first
Luminescent crystal 7, the laser crystal is in 45 ° of placements, for providing gain for seed light；Second plane mirror 8, which receives, comes from first laser
The seed light of crystal 7, and in the incident light in 45 ° of placements, to transmit pump light for reflecting seed light；Second plane mirror 8
It is in 45 ° of placement second laser crystal 9 that the seed light of reflection, which is passed through, and is incident on third plane mirror 10；Third plane mirror 10 is same
With incident light in 45 ° of placements, pump light is transmitted for reflecting seed light；The seed light that third plane mirror 10 reflects is using the
Two condenser lenses 11, to collimate seed light；Seed light after collimation again third half-wave plate 12 to adjust seed light polarization direction；
The seed light in the parallel polarization direction that last three half-wave plate is emitted is transmitted by polarizing beam splitter mirror 3 and is exported, and vertical polarization
Seed light annular chamber is reflected back by polarizing beam splitter mirror 3, amplified again.
At the same time, the first pumping source 13 and the second pumping source 15 distinguish relative transmission pump light, and the two focal spot is and ring
The seed light focal spot transmitted in shape optical path coincides in first laser crystal 7；Third pumping source 17 and the 4th pumping source 19 difference
Relative transmission pump light, the two focal spot coincide in second laser crystal 9 with the seed light focal spot transmitted in annular optical path；?
Under the continuous pumping of first to fourth pumping source 19, seed light is increased from first laser crystal 7 and second laser crystal 9
Benefit, to be amplified.
Wherein, the seed light of parallel polarization is after the transmission of polarizing beam splitter mirror 3, by the second half-wave plate 4, polarization direction rotation
Turn 45 °, then the first, second laser crystal 9 successively placed by 45 °, at this time seed light polarization direction and the first, second laser
9 polarized radiation direction of crystal is consistent, and seed light obtains gain in the first, second laser crystal 9, most afterwards through third half-wave plate
12, adjustable amplified seed light parallel polarization and vertical polarization both direction component size, thus adjust by inclined
The power for the parallel polarization seed light that vibration beam splitter 3 transmits away.The vertical polarization kind of annular chamber is reflected back by polarizing beam splitter mirror 3
Sub-light, by the second half-wave plate 4, polarization direction rotates 135 °, just with 9 polarized radiation direction one of the first, second laser crystal
It causes, to be amplified again.
In specific implementation, the first lens group is additionally provided in the optical path between first pumping source 13 and the first plane mirror 6
14, the second lens group 16, the third pumping source are additionally provided in the optical path between second pumping source 15 and the second plane mirror 8
17 and the second optical path between plane mirror 8 on be additionally provided with the third lens group 18, the 4th pumping source 19 and third plane mirror 10
Between optical path on be additionally provided with the 4th lens group 20.
In specific implementation, first pumping source 13, the second pumping source 15, third pumping source 17 and the 4th pumping source 19 are
For semiconductor diode pump source, the wavelength in semiconductor diode pump source is 808nm or 88Xnm, for the first pumping source 13,
The fibre core of the output optical fibre of second pumping source 15, third pumping source 17 and the output of the 4th pumping source 19 is 200~400um.It is described
First laser crystal 7 and second laser crystal 9 are the laser crystal with linearly polarized radiation property, model Nd:YVO4
Or Nd:GVO4.The first laser crystal 7 and second laser crystal 9 are in 45 ° of placements, the first laser crystal 7 and second
Laser crystal 9 is coated with pump light anti-reflection film and seed light anti-reflection film, on the first laser crystal 7 and second laser crystal 9
Also it is respectively connected with recirculated cooling water.
In specific implementation, first plane mirror 6 and the seed light incident beam and seed light reflected light in respective optical path
Beam respectively be in 45° angle, the second plane mirror 8 in respective optical path seed light incident beam and seed light the reflected beams distinguish
In 45° angle, seed light incident beam and seed light the reflected beams in third plane mirror 10 and respective optical path are in 45 ° respectively
Angle, first plane mirror 6, the second plane mirror 8 and third plane mirror 10 are coated with pump light anti-reflection film and seed light high-reflecting film.
In specific implementation, the first half-wave plate 2, the second half-wave plate 4, third half-wave plate 12, the first condenser lens 5 and second are poly-
Focus lens 11 are coated with seed light anti-reflection film.
The device of the invention all can by the first half-wave plate 2 after seed light either parallel polarization or vertical polarization
Keep its polarization direction consistent with 9 polarized radiation direction of first or second laser crystal, principle is as shown in Figure 3:
Refering to what is shown in Fig. 3, π polarization is 9 radiation polarisation direction of first or second laser crystal, P polarization is parallel polarization, S
Polarization is vertical polarization, as long as enabling 2 θ=45 °, i.e., first or second laser crystal 9 can meet seed light warp in 45 ° of placements
It crosses after the second half-wave plate 4, polarization direction is consistent always with 9 polarized radiation direction of first or second laser crystal.
In one embodiment of the invention, when seed source seed injection optical power is 0.1mW, and repetition rate is 100KHz,
By four semiconductor diode pump watt levels of optimization and optimization seed light hot spot, pump light hot spot first and second
Coincidence degree and facular model matching, amplified seed optical output power in laser crystal 9 are 15.2W, and gain amplifier is most
It is high by reachable 105。
Continuous monitoring record up to 6h, power swing < 3% are carried out to amplified laser power.Amplified output
Hot spot circularity is 0.95.
Apparatus of the present invention have the advantages that gain amplifier is high, output power stability is good, output facula quality is high, after amplification
Ps Laser Pulse can be widely used in micro Process field.
Although specific embodiments of the present invention have been described above, those skilled in the art should be appreciated that this
It is merely illustrative of, various changes or modifications can be made to present embodiment, without departing from the principle and substance of the present invention,
Protection scope of the present invention is only limited by the claims that follow.
Claims (10)
1. a kind of annular chamber amplifying device for picosecond seed laser pulse, which is characterized in that including a picosecond seed source, polarization
Beam splitter, the first plane mirror, the second plane mirror and third plane mirror, in which:
The polarizing beam splitter mirror, the first plane mirror, the second plane mirror and third plane mirror are successively separately positioned on the ring in four sides
The four corners of shape optical path, described picosecond of seed source are located at the light beam injection end of polarizing beam splitter mirror for injecting to polarizing beam splitter mirror
Seed light；
First laser crystal, second plane mirror and the are equipped in optical path between first plane mirror and the second plane mirror
Second laser crystal is equipped in optical path between three plane mirrors；
Light beam institute between the outside of first plane mirror and the first plane mirror of outer lateral edge of the second plane mirror and the second plane mirror
Respectively symmetrically it is equipped with the first pumping source and the second pumping source on straight line, the focal spot of first pumping source and the second pumping source
Focal spot coincides in first laser crystal；
On the outside of second plane mirror between the second plane mirror of outer lateral edge and third plane mirror of third plane mirror where light beam
Third pumping source and the 4th pumping source, the focal spot of the third pumping source and the coke of the 4th pumping source are respectively symmetrically equipped on straight line
Spot coincides in second laser crystal；
The described picosecond of optical path between seed source and polarizing beam splitter mirror is equipped with the first half-wave plate, the polarizing beam splitter mirror and first
The second half-wave plate and the first condenser lens, the third plane are successively arranged along beam Propagation direction in optical path between plane mirror
The second condenser lens and third half-wave plate are successively arranged along beam Propagation direction in the optical path of mirror and polarizing beam splitter mirror.
2. the annular chamber amplifying device according to claim 1 for picosecond seed laser pulse, which is characterized in that described
The first lens group, second pumping source and the second plane mirror are additionally provided in optical path between first pumping source and the first plane mirror
Between optical path on be additionally provided with the second lens group, be additionally provided with third in the optical path between the third pumping source and the second plane mirror
Lens group is additionally provided with the 4th lens group in the optical path between the 4th pumping source and third plane mirror.
3. the annular chamber amplifying device according to claim 2 for picosecond seed laser pulse, which is characterized in that described
First pumping source, the second pumping source, third pumping source and the 4th pumping source are semiconductor diode pump source, two pole of semiconductor
The wavelength of pipe pumping source is 808nm or 88Xnm, is used for the first pumping source, the second pumping source, third pumping source and the 4th pumping source
The fibre core of the output optical fibre of output is 200~400um.
4. the annular chamber amplifying device according to claim 3 for picosecond seed laser pulse, which is characterized in that described
First laser crystal and second laser crystal are the laser crystal with linearly polarized radiation property, model No:YVO4 or
Nd:GVO4.
5. the annular chamber amplifying device according to any one of claims 1 to 4 for picosecond seed laser pulse, feature
It is, the first laser crystal and second laser crystal are in 45 ° of placements.
6. the annular chamber amplifying device according to claim 5 for picosecond seed laser pulse, which is characterized in that described
First laser crystal and second laser crystal are coated with pump light anti-reflection film and seed light anti-reflection film.
7. the annular chamber amplifying device according to claim 6 for picosecond seed laser pulse, which is characterized in that described
Recirculated cooling water is also respectively connected on first laser crystal and second laser crystal.
8. the annular chamber amplifying device according to claim 7 for picosecond seed laser pulse, which is characterized in that described
Seed light incident beam and seed light the reflected beams in first plane mirror and respective optical path are in 45° angle, the second plane respectively
Seed light incident beam and seed light the reflected beams in mirror and respective optical path are in 45° angle respectively, third plane mirror with it is corresponding
Seed light incident beam and seed light the reflected beams in optical path are in 45° angle respectively.
9. the annular chamber amplifying device according to claim 8 for picosecond seed laser pulse, which is characterized in that described
First plane mirror, the second plane mirror and third plane mirror are coated with pump light anti-reflection film and seed light high-reflecting film.
10. the annular chamber amplifying device according to claim 9 for picosecond seed laser pulse, which is characterized in that the
Half of wave plate, the second half-wave plate, third half-wave plate, the first condenser lens and the second condenser lens are coated with seed light anti-reflection film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820799075.4U CN208316016U (en) | 2018-05-25 | 2018-05-25 | Annular chamber amplifying device for picosecond seed laser pulse |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820799075.4U CN208316016U (en) | 2018-05-25 | 2018-05-25 | Annular chamber amplifying device for picosecond seed laser pulse |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208316016U true CN208316016U (en) | 2019-01-01 |
Family
ID=64716559
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820799075.4U Withdrawn - After Issue CN208316016U (en) | 2018-05-25 | 2018-05-25 | Annular chamber amplifying device for picosecond seed laser pulse |
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| CN (1) | CN208316016U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108512027A (en) * | 2018-05-25 | 2018-09-07 | 深圳市海目星激光智能装备股份有限公司 | Annular chamber amplifying device for picosecond seed laser pulse |
| CN113675719A (en) * | 2021-07-16 | 2021-11-19 | 西安电子科技大学 | Tunable long-wave mid-infrared ultrafast laser light source device |
-
2018
- 2018-05-25 CN CN201820799075.4U patent/CN208316016U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108512027A (en) * | 2018-05-25 | 2018-09-07 | 深圳市海目星激光智能装备股份有限公司 | Annular chamber amplifying device for picosecond seed laser pulse |
| CN108512027B (en) * | 2018-05-25 | 2023-11-21 | 海目星激光科技集团股份有限公司 | Annular cavity amplifying device for picosecond seed laser pulse |
| CN113675719A (en) * | 2021-07-16 | 2021-11-19 | 西安电子科技大学 | Tunable long-wave mid-infrared ultrafast laser light source device |
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Address after: 518000 301, Building B, Kemlong Science Park, Guansheng 5th Road, Luhu Community, Guanhu Street, Longhua District, Shenzhen, Guangdong Province (one photo and multiple address enterprises) Patentee after: Hymson Laser Technology Group Co., Ltd. Address before: 518000 Longhua New District, Shenzhen, Guangdong, 26 guanhuan Road, Guanlong street, Jun long community. Patentee before: SHENZHEN HYMSON LASER INTELLIGENT EQUIPMENTS Co.,Ltd. |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20190101 Effective date of abandoning: 20231121 |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20190101 Effective date of abandoning: 20231121 |
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