CN108767649A - Disresonance subnanosecond pulse laser - Google Patents
Disresonance subnanosecond pulse laser Download PDFInfo
- Publication number
- CN108767649A CN108767649A CN201810613841.8A CN201810613841A CN108767649A CN 108767649 A CN108767649 A CN 108767649A CN 201810613841 A CN201810613841 A CN 201810613841A CN 108767649 A CN108767649 A CN 108767649A
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- China
- Prior art keywords
- laser
- dichroic mirror
- disresonance
- pulse laser
- pumping source
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/115—Q-switching using intracavity electro-optic devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
The present invention relates to field of laser device technology, provide a kind of disresonance subnanosecond pulse laser.The laser includes moving back pressure to adjust Q module, pumping source and pump coupling unit, dichroic mirror, laser gain medium, Q-switch and the speculum set gradually along the transmitting optical path direction of pumping source；Pump coupling unit is used to the pump light that pumping source emits focusing on laser gain medium through dichroic mirror, and dichroic mirror is obliquely installed, and one end plating of laser gain medium towards dichroic mirror is equipped with high transmittance film；Moving back pressure adjusts Q module to be electrically connected with Q-switch.The present invention in one end plating of the laser gain medium towards dichroic mirror by setting high transmittance film, and the pump light that pumping source emits all is focused on high transmittance film after dichroic mirror using pump coupling unit, not only ensure that laser intracavitary once get over it is i.e. exportable, effectively control pulse width, but also also improve single pulse energy.In addition, moving back pressure tune Q module since the laser uses, there is no need to quarter wave plate is arranged again.
Description
Technical field
The present invention relates to field of laser device technology, and in particular to a kind of disresonance subnanosecond pulse laser.
Background technology
With the rapid development of laser technology, laser technology is more and more huger in every field role, from military
To civilian, from scientific research to teaching, the various fields such as from industry to agricultural avocation.And in engineer application, some are to processing heat affecting
Sensitive material has higher requirement to the pulse width of laser.It is demonstrated experimentally that the laser that pulsewidth is in subnanosecond section exists
There is higher efficiency, such as when anodized aluminum surfaces are cracked down evil force in processing, using pulsewidth swashing between 500ps~1ns
Light using the blackness of the laser between pulsewidth 5ns~10ns than improving 20~30%, and at the same time, process velocity also improves
50~100%.Therefore, pulsewidth is in the laser in subnanosecond section in laser ranging, laser radar, laser acquisition and medical field
It is more and more widely used.
Currently, existing subnanosecond pulse laser mainly passes through slicing method, saturated absorbing body passive mode-locking method or microplate
Laser method emits the laser in subnanosecond section.Wherein, slicing method requires to turn on the switch in very short time, therefore this laser
Device is to more demanding in terms of circuit, stability is poor；And saturated absorbing body passive mode-locking method is because using Cr:The chips such as YAG, GaAs are made
Subnanosecond laser is obtained for saturable absorber, therefore the stability difference and repetition rate of laser cannot control；Microchip laser
For device method due to utilizing the very short long compression pulse width of chamber, therefore, it is difficult to obtain higher single pulse energy.
Invention content
The object of the present invention is to provide the strong disresonance subnanosecond pulse lasers of a kind of single pulse energy height, stability.
To achieve the above object, the present invention provides a kind of disresonance subnanosecond pulse laser, which includes moving back
Pressure adjust Q module, pumping source and the pump coupling unit set gradually along the transmitting optical path direction of the pumping source, dichroic mirror,
Laser gain medium, Q-switch and speculum；The pump light that the pump coupling unit is used to emit the pumping source penetrates institute
It states dichroic mirror to focus on the laser gain medium, the dichroic mirror is obliquely installed, and the laser gain medium is described in
One end plating of dichroic mirror is equipped with high transmittance film；The pressure of moving back adjusts Q module to be electrically connected with the Q-switch.
Wherein, the distance between the dichroic mirror and the speculum are less than 150mm.
Wherein, the dichroic mirror is for transmiting the pump light and reflection laser, and the reflectivity of the dichroic mirror is more than
95%, transmitance is more than 90%；The speculum is semi-transparent semi-reflecting lens.
Wherein, the Q-switch is electro-optical Q-switch.
Wherein, the material of the electro-optical Q-switch is KTP, BBO, RTP or LN.
Wherein, the material of laser gain medium is Nd:GdVO4、Nd:YVO4,Nd:YAG or Yb:YAG.
Wherein, the pumping source is fiber-coupled diode or semiconductor laser diode.
Wherein, the pump coupling unit is the collimation focusing unit of pump diode laser.
Wherein, the laser gain medium towards one end of the Q-switch be inclined-plane.
Wherein, the angle of inclination on the inclined-plane is Brewster's angle.
The configuration of the present invention is simple, simple operation, by setting height in one end plating of the laser gain medium towards the dichroic mirror
Permeable membrane, and all focused on high transmittance film after the pump light that pumping source emits is passed through dichroic mirror using pump coupling unit, just
The inverted population in laser gain medium can be made to be significantly increased, it can be defeated to not only ensure that laser is once getted in intracavitary
Go out, and then effectively control pulse width, and also improves single pulse energy.In addition, moving back pressure since the laser uses
Adjust Q module, there is no need to which quarter wave plate is arranged again, reduce cost and meanwhile also assure pulsewidth export stability.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of disresonance subnanosecond pulse laser in the embodiment of the present invention.
Reference numeral：
1, pumping source；2, pump coupling unit；2-1, lens；3, dichroic mirror；
4, laser gain medium；5, Q-switch；6, speculum.
Specific implementation mode
To keep the purpose, technical scheme and advantage of invention clearer, below in conjunction with the attached drawing in invention, in invention
Technical solution be explicitly described, it is clear that described embodiment is invention a part of the embodiment, rather than whole realities
Apply example.It is obtained by those of ordinary skill in the art without making creative efforts based on the embodiment in invention
Every other embodiment belongs to the range of invention protection.
In the description of the present invention, unless otherwise indicated, the orientation or positional relationship of the instructions such as term "upper", "lower" is base
It in orientation or positional relationship shown in the drawings, is merely for convenience of description of the present invention and simplification of the description, rather than indicates or imply
Signified laser or element must have a particular orientation, with specific azimuth configuration and operation, therefore should not be understood as pair
The limitation of the present invention.
As shown in Figure 1, the present invention provides a kind of disresonance subnanosecond pulse laser, which includes moving back pressure to adjust Q
Module, pumping source 1 and the pump coupling unit 2 set gradually along the transmitting optical path direction of pumping source 1, dichroic mirror 3, laser increase
Beneficial medium 4, Q-switch 5 and speculum 6；Pump coupling unit 2 is for focusing the pump light that pumping source 1 emits through dichroic mirror 3
Onto laser gain medium 4, dichroic mirror 3 is obliquely installed, and one end plating of laser gain medium 4 towards dichroic mirror 3 is equipped with high transmittance film；
Moving back pressure adjusts Q module to be electrically connected with Q-switch 5.
As a result, when starting pumping source 1, the pump light that pumping source 1 emits just passes sequentially through pump coupling unit 2, double-colored
It is totally reflected by speculum 6 after mirror 3, laser gain medium 4 and Q-switch 5, the light beam after the reflection of speculum 6 is then opened again by Q
Pass 5 and laser gain medium 4 simultaneously reflect output by speculum 6.As it can be seen that the laser structure is simple, simple operation, by swashing
One end plating of optical gain medium 4 towards dichroic mirror 3 sets high transmittance film, and the pumping for emitting pumping source 1 using pump coupling unit 2
Light all focuses on high transmittance film after passing through dichroic mirror 3, so that it may and so that the inverted population in laser gain medium 4 is significantly increased,
To not only significantly improve gain, ensure that laser is once getted over i.e. exportable in intracavitary, and then effectively controls pulse width,
And improve single pulse energy.In addition, moving back pressure tune Q module since the laser uses, there is no need to 1/4 wave is arranged again
Piece, reduce cost and meanwhile also assure pulsewidth output stability.
Preferably, the distance between dichroic mirror 3 and speculum 6 are less than 150mm.For example, between dichroic mirror 3 and speculum 6
Distance be 35mm.Wherein, dichroic mirror 3 tilts 45 ° of settings.In addition, the mirror-type of dichroic mirror 3 and speculum 6 can be according to reality
Output power selected, such as speculum 6 can be, but not limited to be semi-transparent semi-reflecting lens, and dichroic mirror 3 is for transmiting pump light
And reflection laser, and the reflectivity of dichroic mirror 3 is more than 95%, transmitance and is more than 90%, that is to say, that the pump that pumping source 1 emits
Pu light can be radiated at directly through dichroic mirror 3 on laser gain medium 4 after the focusing of pump coupling unit 2, and what intracavitary generated
Laser then can directly be reflected away by dichroic mirror 3.
Preferably, Q-switch 5 is electro-optical Q-switch 5.Wherein, the material of electro-optical Q-switch 5 is KTP, BBO, RTP or LN.
Preferably, the material of laser gain medium 4 is Nd:GdVO4、Nd:YVO4,Nd:YAG or Yb:YAG.For example, this reality
Apply laser gain medium 4 in example use doping concentration for 0.3% Nd:YVO4Crystal, and the laser gain medium 4 is towards double-colored
One end plating of mirror 3 sets transmitance as 99.8% high transmittance film.
Preferably, pumping source 1 is fiber-coupled diode or semiconductor laser diode.
Preferably, pump coupling unit 2 is the collimation focusing unit of pump diode laser.It is highly preferred that pump coupling
Unit 2 includes the lens 2-1 that multiple transmitting optical path directions along pumping source 1 are set gradually.For example, pump coupling unit 2 includes
Two lens 2-1 disposed in parallel, after starting pumping source 1 as a result, the pump light that pumping source 1 emits is after two lens 2-1
Just it is focused to a diameter of 230 μm of hot spot, which passes through after dichroic mirror 3 with regard to direct irradiation on laser gain medium 4, makes it
Local inverted population is significantly increased.
Further, in order to avoid laser gain medium 4 generates unwanted oscillation, laser gain medium 4 is towards Q-switch 5
One end is inclined-plane.Wherein, the angle of inclination on inclined-plane is preferably Brewster's angle, and the laser just no longer needs to setting polarization as a result,
Piece.
Finally it should be noted that：Above example is only to illustrate the technical solution of invention, rather than its limitations；Although ginseng
Invention is described in detail according to previous embodiment, it will be understood by those of ordinary skill in the art that：It still can be right
Technical solution recorded in foregoing embodiments is modified or equivalent replacement of some of the technical features；And this
A little modification or replacements, the spirit and scope for each embodiment technical solution of invention that it does not separate the essence of the corresponding technical solution.
Claims (10)
1. a kind of disresonance subnanosecond pulse laser, which is characterized in that adjust Q module, pumping source and along described including moving back pressure
Pump coupling unit, dichroic mirror, laser gain medium, Q-switch and the speculum that the transmitting optical path direction of pumping source is set gradually；
The pump coupling unit is used to the pump light that the pumping source emits focusing on the laser gain through the dichroic mirror
On medium, the dichroic mirror is obliquely installed, and one end plating of the laser gain medium towards the dichroic mirror is equipped with high transmittance film；Institute
Stating to move back to press adjusts Q module to be electrically connected with the Q-switch.
2. disresonance subnanosecond pulse laser according to claim 1, which is characterized in that the dichroic mirror with it is described anti-
It penetrates the distance between mirror and is less than 150mm.
3. disresonance subnanosecond pulse laser according to claim 1, which is characterized in that the dichroic mirror is for transmiting
The pump light and reflection laser, and the reflectivity of the dichroic mirror is more than 95%, transmitance and is more than 90%；The speculum is
Semi-transparent semi-reflecting lens.
4. disresonance subnanosecond pulse laser according to claim 1, which is characterized in that the Q-switch is that electric light Q is opened
It closes.
5. disresonance subnanosecond pulse laser according to claim 4, which is characterized in that the material of the electro-optical Q-switch
Matter is KTP, BBO, RTP or LN.
6. disresonance subnanosecond pulse laser according to claim 1, which is characterized in that the material of laser gain medium
For Nd:GdVO4、Nd:YVO4,Nd:YAG or Yb:YAG.
7. disresonance subnanosecond pulse laser according to claim 1, which is characterized in that the pumping source is optical fiber coupling
Close diode or semiconductor laser diode.
8. disresonance subnanosecond pulse laser according to claim 1, which is characterized in that the pump coupling unit is
The collimation focusing unit of pump diode laser.
9. according to claim 1 to 8 any one of them disresonance subnanosecond pulse laser, which is characterized in that the laser
Gain media towards one end of the Q-switch be inclined-plane.
10. disresonance subnanosecond pulse laser according to claim 9, which is characterized in that the inclination angle on the inclined-plane
Degree is Brewster's angle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810613841.8A CN108767649A (en) | 2018-06-14 | 2018-06-14 | Disresonance subnanosecond pulse laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810613841.8A CN108767649A (en) | 2018-06-14 | 2018-06-14 | Disresonance subnanosecond pulse laser |
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| Publication Number | Publication Date |
|---|---|
| CN108767649A true CN108767649A (en) | 2018-11-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810613841.8A Pending CN108767649A (en) | 2018-06-14 | 2018-06-14 | Disresonance subnanosecond pulse laser |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364924A (en) * | 2019-08-09 | 2019-10-22 | 福建科彤光电技术有限公司 | A kind of electro-optical Q-switching laser |
| CN110474227A (en) * | 2019-08-16 | 2019-11-19 | 清华大学 | A kind of short-pulse laser system and control method based on Burst mode |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102299469A (en) * | 2011-07-22 | 2011-12-28 | 北京工业大学 | Laser for realizing subnanosecond Q-modulated output by controlling pump light characteristic |
| TW201304333A (en) * | 2011-07-13 | 2013-01-16 | Univ Nat Cheng Kung | Q-switching-induced gain-switched erbium pulse laser system |
| US20130094526A1 (en) * | 2011-10-14 | 2013-04-18 | United States Of America, As Represented By The Secretary Of The Army | MEMS Q-Switched Nd:YLF Monoblock Laser |
| CN105140772A (en) * | 2015-09-30 | 2015-12-09 | 中国科学院合肥物质科学研究院 | Electro-optic Q-switch capable of completely compensating for laser thermal depolarization |
| CN206313282U (en) * | 2016-12-09 | 2017-07-07 | 北京镭宝光电技术有限公司 | Psec pulsewidth electro-optical Q-switching laser |
-
2018
- 2018-06-14 CN CN201810613841.8A patent/CN108767649A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201304333A (en) * | 2011-07-13 | 2013-01-16 | Univ Nat Cheng Kung | Q-switching-induced gain-switched erbium pulse laser system |
| CN102299469A (en) * | 2011-07-22 | 2011-12-28 | 北京工业大学 | Laser for realizing subnanosecond Q-modulated output by controlling pump light characteristic |
| US20130094526A1 (en) * | 2011-10-14 | 2013-04-18 | United States Of America, As Represented By The Secretary Of The Army | MEMS Q-Switched Nd:YLF Monoblock Laser |
| CN105140772A (en) * | 2015-09-30 | 2015-12-09 | 中国科学院合肥物质科学研究院 | Electro-optic Q-switch capable of completely compensating for laser thermal depolarization |
| CN206313282U (en) * | 2016-12-09 | 2017-07-07 | 北京镭宝光电技术有限公司 | Psec pulsewidth electro-optical Q-switching laser |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364924A (en) * | 2019-08-09 | 2019-10-22 | 福建科彤光电技术有限公司 | A kind of electro-optical Q-switching laser |
| CN110474227A (en) * | 2019-08-16 | 2019-11-19 | 清华大学 | A kind of short-pulse laser system and control method based on Burst mode |
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Application publication date: 20181106 |