CN110364924A - A kind of electro-optical Q-switching laser - Google Patents
A kind of electro-optical Q-switching laser Download PDFInfo
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- CN110364924A CN110364924A CN201910734620.0A CN201910734620A CN110364924A CN 110364924 A CN110364924 A CN 110364924A CN 201910734620 A CN201910734620 A CN 201910734620A CN 110364924 A CN110364924 A CN 110364924A
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- electro
- hot spot
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- laser
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- 239000013078 crystal Substances 0.000 claims abstract description 48
- 230000006835 compression Effects 0.000 claims abstract description 34
- 238000007906 compression Methods 0.000 claims abstract description 34
- 238000005086 pumping Methods 0.000 claims abstract description 12
- 229910009372 YVO4 Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 230000009286 beneficial effect Effects 0.000 claims description 4
- 239000005350 fused silica glass Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 3
- 239000013307 optical fiber Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 3
- 229910017502 Nd:YVO4 Inorganic materials 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/115—Q-switching using intracavity electro-optic devices
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
The invention discloses a kind of electro-optical Q-switching lasers, including pumped laser system, pumped laser system pumping focus on light beam rear, which is successively arranged, is coaxially provided with planar optics and gain media, the first hot spot compression prism is passed sequentially through by the gain media and the second hot spot compression prism carries out transverse compression to laser cavity mold lateral light spot, then pass through BBO electro-optic crystal Q-switch unit, the rear of the BBO electro-optic crystal Q-switch unit is equipped with the output Q-switched pulse laser of plano-concave output optic acts, the planar optics and the plano-concave output optic acts constitute laser resonant cavity.The present invention compresses prism by hot spot and carries out transverse compression to light beam in laser resonator, the lateral light passing size of electrooptical switching is allowed to process ground very little, with flake structure, and then the half-wave voltage of electrooptical switching can be reduced, realize the electric-optically Q-switched laser output of low switch voltage, high on-off ratio.
Description
Technical field
The invention belongs to field of laser device technology, and in particular to a kind of electro-optical Q-switching laser.
Background technique
Pulse laser because it is with very high peak power and single pulse energy so that its fields such as industrial processes by
Favor.It is understood that the method for obtaining pulse laser output is broadly divided into, actively Q-switched, passive Q-adjusted and mode locking, in these modes
Actively Q-switched pulsed laser technique is undoubtedly most mature at present in method, and use scope is most wide, and obtains highest average power
The effective means of pulse laser, and actively Q-switched Laser Modulation parameter is artificially controllable, is to obtain to stablize repetitive frequency pulsed string
Major way.Usual actively Qswitched laser is divided into electric light and acoustooptic switch modulates two kinds, they respectively have advantage and disadvantage.
Using BBO electro-optic crystal as the electrooptical switching Q-switch laser of representative, since its output pulse width is narrower, antibody Monoclonal ability is more
Strong etc. advantage and be widely used by people.Except this, BBO electrooptical switching also has the advantages that lower piezoelectric effect, and it is answered
It is easy to operate with process, it is the preferred embodiment in current electrooptical switching.But due to its half-wave voltage with higher, and
Since the Z crystal cut is not easy to grow into large scale, so this is just needed in view of the these problems such as driving power and crystal cost,
Which limits its applications as electrooptical switching in Q-switched laser, so dominating actively Qswitched laser market still at present
It is so acoustooptic switch.In order to reduce the operating voltage of BBO electrooptical switching, it is above to be used to overcome that this patent provides following scheme
Problem.
Summary of the invention
(1) technical solution
In order to overcome the shortage of prior art, the present invention provides a kind of electro-optical Q-switching laser, including pumped laser system, the pump
Pu laser system pumping focus on light beam rear, which is successively arranged, is coaxially provided with planar optics and gain media, by the gain media
It passes sequentially through the first hot spot compression prism and the second hot spot compression prism carries out transverse compression to laser cavity mold lateral light spot, then
By BBO electro-optic crystal Q-switch unit, it is defeated that the rear of the BBO electro-optic crystal Q-switch unit is equipped with plano-concave output optic acts
Adjusting Q pulse laser out, the planar optics and the plano-concave output optic acts constitute laser resonant cavity.
Further, the pumped laser system includes pumping source and beam collimation focusing system, and the pumping source is LD
Optical fiber output is coupled, the beam collimation focusing system is telescopic system.
Further, the gain media is Nd:YVO4 crystal or Nd:YAG crystal or Nd:YLF crystal.
Further, the first hot spot compression prism and second hot spot compression prism are by right-angle surface and angle of wedge face group
At wherein the preferred cloth edged surface in angle of wedge face, the first hot spot compression prism and second hot spot compression prism pass through fused quartz
Or YVO4 crystal is prepared.
Further, the BBO electro-optic crystal in the BBO electro-optic crystal Q-switch unit with a thickness of 1.5mm, 1mm,
0.8mm or 0.5mm.
Further, front cavity mirror of the end face of the gain media as resonant cavity, and other end is processed to
Brewster edged surface.
Further, first hot spot compression prism and the second hot spot compression prism are that twin-stage cascades, and described the
One hot spot compression prism and the second hot spot compression prism can cascade one group or more other hot spot compression prism pair.
Further, in the BBO electro-optic crystal Q-switch unit BBO electro-optic crystal rear end face be resonant cavity after
Hysteroscope.
(2) beneficial effect
Beneficial effects of the present invention: compared with the prior art, the present invention compresses prism to light in laser resonator by hot spot
Shu Jinhang transverse compression allows the lateral light passing size of electrooptical switching to process ground very little, has flake structure, and then can be with
The half-wave voltage of electrooptical switching is reduced, realizes the electric-optically Q-switched laser output of low switch voltage, high on-off ratio, and compact-sized,
Effect is obvious.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of one electro-optical Q-switching laser of embodiment；
Fig. 2 is the structural schematic diagram of two electro-optical Q-switching laser of embodiment；
Fig. 3 is the structural schematic diagram of three electro-optical Q-switching laser of embodiment.
Specific embodiment
Below with reference to embodiment, the present invention is further illustrated.
Embodiment one
Referring to Fig. 1, the implementation case provides a kind of electro-optical Q-switching laser, including pumped laser system 101, the pumping swashs
The pumping of photosystem 101 focus on light beam rear, which is successively arranged, is coaxially provided with planar optics 102 and gain media 104, by the increasing
Beneficial medium 104 pass sequentially through the first hot spot compression prism 105 and the second hot spot compression prism 106 to laser cavity mold lateral light spot into
Then row transverse compression passes through BBO electro-optic crystal Q-switch unit 107, the BBO electro-optic crystal Q-switch unit 107
Rear is equipped with the output Q-switched pulse laser of plano-concave output optic acts 103, the planar optics 102 and 103 structure of plano-concave output optic acts
At laser resonant cavity.
The present embodiment using Nd:YVO4 crystal as gain media 104 for illustrate its working principle, first pumping laser system
It unites the pumping focus on light beam of 101 output wavelength 808nm, is incident to gain media 104 by planar optics 102, excitation gain is situated between
Matter generates 1064nm Laser emission.Pumping laser is the non-inclined output of fiber-coupled LD, 102 front end face plated film AR@of planar optics
808nm, rear end face plated film HR@1064nm and AR@808nm.Cavity mold laser successively passes through the specification ruler made using identical material
It is very little identical, but place glancing incidence after different the first hot spot compression prism 105 in orientation and the second hot spot compression prism 106
BBO electro-optic crystal Q-switch unit 107, finally by the output Q-switched pulse laser of plano-concave output optic acts 103, plano-concave output optic acts
103 front end face plated film PR@1064nm.Wherein, the first hot spot compression prism 105 and the second hot spot compression prism 106 are to laser cavity
Mould transverse direction hot spot is compressed, and is allowed it under the premise of not increasing cavity loss through BBO electro-optic crystal Q-switch list
Member 107.BBO electro-optic crystal Q-switch unit 107 carries out active switch to cavity mold laser by setting driving source switch repetitive rate
Control obtains controllable pulse output with this.
The invention will be further described by taking 3 × 3 × 25mmZ-cutBBO electro-optic crystal as an example for the present embodiment.In general, this
The half-wave voltage of a sized crystals is 5200V, is applied in the laser cavity of the present embodiment and takes its 1/4 wave voltage, i.e. 2600V, i.e.,
Make in this way, high modulation voltage also brings along some problems, for example, the cost of high-voltage modulation power supply, precision, volume and reliability.
It is inversely proportional according to the half-wave voltage of BBO electro-optic crystal and crystal length l, the relationship directly proportional to its thickness d, to reduce half-wave
Voltage can only use thin plate crystals structure.Currently, most thin BBO electro-optic crystal can accomplish 1.5mm, corresponding 1/4 wave on the market
Voltage is 1300V, still too high.Under normal circumstances, collimated beam diameter is about in long collimator distance 100mm for optical fiber collimator
0.8mm ~ 1.0mm, hot spot about 0.4 ~ 0.6mm in laser cavity, 1.5mm crystal thickness is substantially close to current practical limiting value.Greatly
The size that hot spot does not require nothing more than crystal is big, and also brings along trouble to optical path adjusting, and large spot laser cavity mold makes that Q is adjusted to swash
The on-off ratio of optical cavity is decreased obviously, generally in 20 ~ 25dB.Prism 105 is compressed by the first hot spot and the second hot spot compresses prism
106 pairs of the present embodiment collimated light beams compress, and can obtain lesser lateral hot spot and will not introduce aberration.As shown in figure 1, false
If the spot size of incident shaping prism group is Lin=0.8mm, prism material is fused quartz n=1.5, it is known that Brewster's angle is big
Small is 56 °, can obtain Lout=Lin × M2 (the wherein compression ratio that M is prism group), hot spot after can must compressing by simple computation
Lateral dimension is 0.36mm.If fused quartz is replaced with YVO4 crystal, 0.8mm hot spot can be compressed to 0.2mm by n=2.Such as
This, the BBO electro-optic crystal of originally 1.5mm thickness can be thinned to 0.4mm, corresponding 1/4 wave voltage 450V, the cost of such power supply and
Precision can all significantly improve.If it is necessary, can cascade with twin-stage prism group, YVO4 crystal is still used, Lout=Lin ×
M4=0.05mm, crystal can be thinned to 0.1mm, corresponding 1/4 wave voltage 87V.
Embodiment two
Referring to Fig. 2, the principle for obtaining Q-switched Pulse Laser is identical as Fig. 1, only by planar optics 102 and gain media
104 change laser crystal 201 into, wherein front end face plated film HR@1064nm and AR the@808nm of laser crystal 201, laser crystal 201
Rear end face is thrown at cloth edged surface, for compressing hot spot, the rear end face plated film PR 1064nm of BBO electro-optic crystal 202.This structure is more
It is compact, facilitate laser to adjust.
Embodiment three
Referring to Fig. 3, the present embodiment cascades third light after the first hot spot compresses prism 105 and the second hot spot compression prism 106
Spot compresses prism 301 and the 4th hot spot compresses prism 302, can further compress laser facula, further decrease electro-optic crystal
Electrode direction thickness, to obtain lower 1/4 wave voltage.Q principle and implementation process is adjusted to be the same as example 1, it is no longer superfluous herein
It states.
The preferred embodiment of the present invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, several deformations can also be made, improves and substitutes, these belong to this hair
Bright protection scope.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (8)
1. a kind of electro-optical Q-switching laser, including pumped laser system (101), which is characterized in that the pumped laser system
(101) pumping focus on light beam rear, which is successively arranged, is coaxially provided with planar optics (102) and gain media (104), by the increasing
Beneficial medium (104) passes sequentially through the first hot spot compression prism (105) and the second hot spot compression prism (106) is lateral to laser cavity mold
Hot spot carries out transverse compression, then passes through BBO electro-optic crystal Q-switch unit (107), the BBO electro-optic crystal Q-switch list
The rear of first (107) is equipped with plano-concave output optic acts (103) output Q-switched pulse laser, the planar optics (102) and the plano-concave
Output optic acts (103) constitutes laser resonant cavity.
2. a kind of electro-optical Q-switching laser according to claim 1, it is characterised in that: pumped laser system (101) packet
Pumping source and beam collimation focusing system are included, the pumping source is that LD couples optical fiber output, and the beam collimation focusing system is
Telescopic system.
3. a kind of electro-optical Q-switching laser according to claim 1, it is characterised in that: the gain media (104) is Nd:
YVO4 crystal or Nd:YAG crystal or Nd:YLF crystal.
4. a kind of electro-optical Q-switching laser according to claim 1, it is characterised in that: first hot spot compresses prism
(105) it is made of with second hot spot compression prism (106) right-angle surface and angle of wedge face, first hot spot compresses prism
(105) it is prepared with second hot spot compression prism (106) by fused quartz or YVO4 crystal.
5. a kind of electro-optical Q-switching laser according to claim 1, it is characterised in that: the BBO electro-optic crystal Q-switch
BBO electro-optic crystal in unit (107) with a thickness of 1.5mm, 1mm, 0.8mm or 0.5mm.
6. a kind of electro-optical Q-switching laser according to claim 1 or 3, it is characterised in that: the gain media (104)
Front cavity mirror of one end face as resonant cavity, and other end is processed to Brewster edged surface.
7. a kind of electro-optical Q-switching laser according to claim 1 or 4, it is characterised in that: first hot spot compresses prism
(105) and the second hot spot compression prism (106) is twin-stage cascade, and first hot spot compresses prism (105) and the second light
Spot compression prism (106) can cascade one group or more other hot spot compression prism pair.
8. a kind of electro-optical Q-switching laser according to claim 1, it is characterised in that: the BBO electro-optic crystal Q-switch
The rear end face of BBO electro-optic crystal is the Effect of Back-Cavity Mirror of resonant cavity in unit (107).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910734620.0A CN110364924A (en) | 2019-08-09 | 2019-08-09 | A kind of electro-optical Q-switching laser |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910734620.0A CN110364924A (en) | 2019-08-09 | 2019-08-09 | A kind of electro-optical Q-switching laser |
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| CN110364924A true CN110364924A (en) | 2019-10-22 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200251874A1 (en) * | 2019-01-31 | 2020-08-06 | L3Harris Technologies, Inc. | Continuous wave end-pumped laser |
| CN117277037A (en) * | 2023-11-21 | 2023-12-22 | 长春理工大学 | Light spot superposition homogenizing anhydrous air-cooling-free laser and output method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6182491A (en) * | 1984-09-29 | 1986-04-26 | Toshiba Corp | Q switch laser device |
| CN101499615A (en) * | 2009-02-24 | 2009-08-05 | 福州高意通讯有限公司 | High power semiconductor pump laser and amplifier |
| CN201490565U (en) * | 2009-08-17 | 2010-05-26 | 福州高意通讯有限公司 | Structure of electro-optical Q-switch |
| CN201726032U (en) * | 2010-04-23 | 2011-01-26 | 北京工业大学 | High-repeating-frequency subnanosecond pulse width electro-optical Q-switching laser |
| CN102299469A (en) * | 2011-07-22 | 2011-12-28 | 北京工业大学 | Laser for realizing subnanosecond Q-modulated output by controlling pump light characteristic |
| CN108767649A (en) * | 2018-06-14 | 2018-11-06 | 清华大学 | Disresonance subnanosecond pulse laser |
| CN209200369U (en) * | 2019-01-10 | 2019-08-02 | 西安文理学院 | One kind being based on the electric-optically Q-switched all solid state laser of MgO:LN crystal prebias |
| CN209981721U (en) * | 2019-08-09 | 2020-01-21 | 福建科彤光电技术有限公司 | Electro-optical Q-switched laser |
-
2019
- 2019-08-09 CN CN201910734620.0A patent/CN110364924A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6182491A (en) * | 1984-09-29 | 1986-04-26 | Toshiba Corp | Q switch laser device |
| CN101499615A (en) * | 2009-02-24 | 2009-08-05 | 福州高意通讯有限公司 | High power semiconductor pump laser and amplifier |
| CN201490565U (en) * | 2009-08-17 | 2010-05-26 | 福州高意通讯有限公司 | Structure of electro-optical Q-switch |
| CN201726032U (en) * | 2010-04-23 | 2011-01-26 | 北京工业大学 | High-repeating-frequency subnanosecond pulse width electro-optical Q-switching laser |
| CN102299469A (en) * | 2011-07-22 | 2011-12-28 | 北京工业大学 | Laser for realizing subnanosecond Q-modulated output by controlling pump light characteristic |
| CN108767649A (en) * | 2018-06-14 | 2018-11-06 | 清华大学 | Disresonance subnanosecond pulse laser |
| CN209200369U (en) * | 2019-01-10 | 2019-08-02 | 西安文理学院 | One kind being based on the electric-optically Q-switched all solid state laser of MgO:LN crystal prebias |
| CN209981721U (en) * | 2019-08-09 | 2020-01-21 | 福建科彤光电技术有限公司 | Electro-optical Q-switched laser |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200251874A1 (en) * | 2019-01-31 | 2020-08-06 | L3Harris Technologies, Inc. | Continuous wave end-pumped laser |
| US11881676B2 (en) * | 2019-01-31 | 2024-01-23 | L3Harris Technologies, Inc. | End-pumped Q-switched laser |
| CN117277037A (en) * | 2023-11-21 | 2023-12-22 | 长春理工大学 | Light spot superposition homogenizing anhydrous air-cooling-free laser and output method |
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