CN209200369U - One kind being based on the electric-optically Q-switched all solid state laser of MgO:LN crystal prebias - Google Patents
One kind being based on the electric-optically Q-switched all solid state laser of MgO:LN crystal prebias Download PDFInfo
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- CN209200369U CN209200369U CN201920037578.2U CN201920037578U CN209200369U CN 209200369 U CN209200369 U CN 209200369U CN 201920037578 U CN201920037578 U CN 201920037578U CN 209200369 U CN209200369 U CN 209200369U
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Abstract
The utility model discloses one kind to be based on the electric-optically Q-switched all solid state laser of MgO:LN crystal prebias, including total reflection mirror (1), electro-optic crystal (2), polarizing film (3), laser crystal (4), outgoing mirror (5), synchronization delay device (6), signal generator (7)；The total reflection mirror (1), electro-optic crystal (2), polarizing film (3), laser crystal (4), outgoing mirror (5) are set gradually, the synchronization delay device (6) is connected to electro-optic crystal (2) and laser crystal (4), and the signal generator (6) is connected to synchronous delayer (7).The high-energy of the utility model, narrow spaces, high repetition frequency 1064nm semi-conductor laser pumping all there is preferable beam quality and longer service life, have the advantages that simultaneously compact-sized, it can apply in the fields such as medical treatment, industry, military affairs etc. are many, obtain and stablize output and the 1064nm semiconductor laser with relatively narrow pulse width and MW magnitude peak power is mainly realized by electric-optically Q-switched technology.
Description
Technical field
The utility model relates to field of lasers, more particularly to one kind are electric-optically Q-switched complete solid based on the prebias of MgO:LN crystal
State laser.
Background technique
Gain media excites the adding pressure type electro-optical Q-switching laser of upper energy level energy storage that can obtain pulse width 10ns's or so
Short-pulse laser output, but it is lower based on LD end pumping efficiency, and optical path is more complex, and common electro-optic crystal BBO, KD*P are easy to damp
Solution, RTP price is more expensive, and LGS damage threshold is lower, influence using.
Utility model content
To solve drawbacks described above in the prior art, the utility model discloses one kind based on MgO:LN crystal prebias electricity
Light tune Q all solid state laser.
The utility model is achieved through the following technical solutions:
One kind be based on the electric-optically Q-switched all solid state laser of MgO:LN crystal prebias, including total reflection mirror, electro-optic crystal, partially
Shake piece, laser crystal, outgoing mirror, synchronization delay device, signal generator；The total reflection mirror, electro-optic crystal, polarizing film, laser
Crystal, outgoing mirror are set gradually, and the synchronization delay device is connected to electro-optic crystal and laser crystal, the signal generator connection
To synchronization delay device.
Preferably, the total reflection mirror crosses the highly transmissive film of 1064nm processed.
Preferably, the electro-optic crystal is MgO:LN crystal, and having a size of 7mm × 7 mm × 20mm, two light passings are coated with
1064nm high-reflecting film.
Preferably, the polarizing film with a thickness of 2mm, diameter 20mm, mirror normal direction and resonant cavity light passing axis it
Between angle be 55.0 ° -56.0 ° of Brewster's angle.
Preferably, the laser crystal is Nd:YAG crystal bar, and having a size of the mm of φ 3mm × 65, two light passing is plated
The highly transmissive film of 1064nm processed.
Preferably, the outgoing mirror is 40% outgoing mirror.
The beneficial effects of the utility model are:
High-energy, narrow spaces, high repetition frequency 1064nm semi-conductor laser pumping all have it is preferable
Beam quality and longer service life, while having the advantages that compact-sized, it can apply in medical treatment, industry, military affairs etc.
Many equal fields obtain and stablize output and swash with the 1064nm semiconductor of relatively narrow pulse width and MW magnitude peak power
What light was mainly realized by electric-optically Q-switched technology.
Using the long size of LD profile pump, highly doped Nd:YAG gain media, the prebias based on MgO:LN crystal
Technology and synchronization delay technology are obtained in repetition rate 1kHz and 200Hz, and maximum average output power is respectively 15.4W
It is exported with the 1064nm pulse laser of 8.4W, corresponding pulse width 21ns and 10ns, pulse width peak-to-peak value instability
Respectively ± 4.75% and ± 3.25%, while measuring factor M 2 in repetition rate 1kHz is M2x=4.13, M2y=
4.65, experimental result can be laser marking, laser cutting, laser boring, laser ranging, remote sensing, nonlinear optical frequency conversion
Equal fields provide application reference.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model；
In figure: 1. total reflection mirror, 2. electro-optic crystal, 3. polarizing film, 4. laser crystal, 5. outgoing mirror, 6. synchronization delay device
7. signal generator.
Specific embodiment
It is practical to this with Detailed description of the invention combined with specific embodiments below to be easy to understand the technical solution of the utility model
It is novel to be further described.
The electric-optically Q-switched all solid state laser of MgO:LN crystal prebias is based on as shown in Figure 1, a kind of, including total reflection mirror 1,
Electro-optic crystal 2, polarizing film 3, laser crystal 4, outgoing mirror 5, synchronization delay device 6, signal generator 7；The total reflection mirror 1, electricity
Luminescent crystal 2, polarizing film 3, laser crystal 4, outgoing mirror 5 are set gradually, and the synchronization delay device 6 is connected to electro-optic crystal 2 and swashs
Luminescent crystal 4, the signal generator 7 are connected to synchronous delayer 6.
The total reflection mirror 1 is coated with the highly transmissive film of 1064nm (﹪ of R > 99.8).
The electro-optic crystal 2 is MgO:LN crystal, and having a size of 7mm × 7mm × 20mm, two light passings are coated with 1064nm high
Lithium niobate (MgO:LN) crystal of anti-film (﹪ of R > 99.8), miscellaneous magnesia is having general undoped lithium columbate crystal (LN) cross
While lower to half-wave voltage, its anti-light interference and anti-photorefraction can be greatly improved, bears the general LN crystal of beam intensity ratio
Improve two orders of magnitude；And the prebias technology based on MgO:LN crystal, added compared with tradition based on Nd:YAG gain media
The electric-optically Q-switched technology of pressure type eliminates the wave plate of λ/4, reduces the device loss in optical path, so as to improve its output power.
The folder with a thickness of 2mm, diameter 20mm, between mirror normal direction and resonant cavity light passing axis of the polarizing film 3
Angle is 55.0 ° -56.0 ° of Brewster's angle.
The laser crystal 4 is Nd:YAG crystal bar, and having a size of φ 3mm × 65mm, two light passing is coated with
The highly transmissive film of 1064nm (﹪ of R > 99.8).
The outgoing mirror 5 is 40% outgoing mirror.
The principles of the present invention are as follows: Laser Power Devices are put into external control, are pumped from synchronization pulse generator to pulse LD
Pu module drive power supply and MgO:LN crystal high drive power supply provide start pulse signal, by the delay for adjusting two signals
Triggered time guarantees to pressurize for MgO:LN crystal and triggers 808nm pulse LD pump light precise synchronization, reaches in maximum cavity
The purpose of energy storage.Wherein, LD pump module is side three-dimensional, adjacent angle is 120 ° of LD arrays, and laser gain medium is
Nd:YAG crystal bar, pulse LD center emission wavelength are 808nm, and pulse recurrence frequency is that 1kHz-1Hz is adjustable, pump duty ratio
20%, pulse width be 250 μ s, MgO:LN crystal along optical axis deflection angle according to theoretical calculation θ=2.96 °, P- polarised light is logical
When crossing prebias angle MgO:LN crystal, in high loss, low reactance-resistance ratio, resonant cavity can not generate oscillation, export without laser；
MgO:LN crystal adds voltage, and along optical axis is deviateed, θ is incident at an appropriate angle, after MgO:LN crystal, can make emergent light
The phase difference pi/2 of generation, effect are equal to the wave plate of λ/4, and resonant cavity generates laser generation, are in low-loss, high q-factor, resonance
Intracavitary P- polarizes light output.
The beneficial effect of the present embodiment is: using the long size of LD profile pump, highly doped Nd:YAG gain media,
Prebias technology and synchronization delay technology based on MgO:LN crystal are obtained in repetition rate 1kHz and 200Hz, and maximum is flat
Equal output power is respectively that the 1064nm pulse laser of 15.4W and 8.4W exports, corresponding pulse width 21ns and 10ns,
Pulse width peak-to-peak value instability is respectively ± 4.75% and ± 3.25%, while measuring factor M 2 in repetition rate 1kHz
For M2x=4.13, M2y=4.65, experimental result can be laser marking, laser cutting, laser boring, laser ranging, remote sensing, non-
The fields such as linear optics frequency transformation provide application reference.
The foregoing is merely the preferred embodiments of the utility model, are not intended to limit the utility model, although reference
The utility model is described in detail in previous embodiment, for those skilled in the art, still can be right
Technical solution documented by foregoing embodiments is modified or equivalent replacement of some of the technical features.It is all
Within the spirit and principles of the utility model, it is practical new to should be included in this for any modification, equivalent replacement, improvement and so on
Within the protection scope of type.
Claims (6)
1. one kind is based on the electric-optically Q-switched all solid state laser of MgO:LN crystal prebias, which is characterized in that including total reflection mirror, electricity
Luminescent crystal, polarizing film, laser crystal, outgoing mirror, synchronization delay device, signal generator；The total reflection mirror, electro-optic crystal, partially
Vibration piece, laser crystal, outgoing mirror are set gradually, and the synchronization delay device is connected to electro-optic crystal and laser crystal, the signal
Generator is connected to synchronous delayer.
2. all solid state laser according to claim 1, which is characterized in that it is highly transmissive that the total reflection mirror is coated with 1064nm
Film.
3. all solid state laser according to claim 1, which is characterized in that the electro-optic crystal is MgO:LN crystal,
Having a size of 7mm × 7mm × 20mm, two light passings are coated with 1064nm high-reflecting film.
4. all solid state laser according to claim 1, which is characterized in that the polarizing film with a thickness of 2mm, diameter is
20mm, the angle between mirror normal direction and resonant cavity light passing axis are 55.0 ° -56.0 ° of Brewster's angle.
5. all solid state laser according to claim 1, which is characterized in that the laser crystal is Nd:YAG crystal bar,
, having a size of φ 3mm × 65mm, two light passing is coated with the highly transmissive film of 1064nm for it.
6. all solid state laser according to claim 1, which is characterized in that the outgoing mirror is 40% outgoing mirror.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920037578.2U CN209200369U (en) | 2019-01-10 | 2019-01-10 | One kind being based on the electric-optically Q-switched all solid state laser of MgO:LN crystal prebias |
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|---|---|---|---|
| CN201920037578.2U CN209200369U (en) | 2019-01-10 | 2019-01-10 | One kind being based on the electric-optically Q-switched all solid state laser of MgO:LN crystal prebias |
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| CN201920037578.2U Expired - Fee Related CN209200369U (en) | 2019-01-10 | 2019-01-10 | One kind being based on the electric-optically Q-switched all solid state laser of MgO:LN crystal prebias |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364924A (en) * | 2019-08-09 | 2019-10-22 | 福建科彤光电技术有限公司 | A kind of electro-optical Q-switching laser |
| CN111384659A (en) * | 2020-03-13 | 2020-07-07 | 中国电子科技集团公司第十一研究所 | Laser resonator assembly, laser and method for tuning resonator assembly |
-
2019
- 2019-01-10 CN CN201920037578.2U patent/CN209200369U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364924A (en) * | 2019-08-09 | 2019-10-22 | 福建科彤光电技术有限公司 | A kind of electro-optical Q-switching laser |
| CN111384659A (en) * | 2020-03-13 | 2020-07-07 | 中国电子科技集团公司第十一研究所 | Laser resonator assembly, laser and method for tuning resonator assembly |
| CN111384659B (en) * | 2020-03-13 | 2022-03-11 | 中国电子科技集团公司第十一研究所 | Laser resonator assembly, laser and method for tuning resonator assembly |
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| CF01 | Termination of patent right due to non-payment of annual fee |
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| CF01 | Termination of patent right due to non-payment of annual fee |