CN102738695A - Semiconductor diode side-pump intracavity frequency doubling ultraviolet laser and method thereof - Google Patents
Semiconductor diode side-pump intracavity frequency doubling ultraviolet laser and method thereof Download PDFInfo
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- CN102738695A CN102738695A CN2012102369346A CN201210236934A CN102738695A CN 102738695 A CN102738695 A CN 102738695A CN 2012102369346 A CN2012102369346 A CN 2012102369346A CN 201210236934 A CN201210236934 A CN 201210236934A CN 102738695 A CN102738695 A CN 102738695A
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Abstract
The invention discloses a semiconductor diode side-pump intracavity frequency doubling ultraviolet laser and a method thereof. The ultraviolet laser comprises a first total reflection mirror, a first side pump module, a first lens, a second lens, a 90-degree rotator, a second side pump module, an acousto-optic Q-switch, a polaroid, a second total reflection mirror, a wave plate, a frequency doubling crystal, a sum frequency crystal and a third total reflection mirror which are connected in proper sequence, wherein the first total reflection mirror and the third total reflection mirror constitute a fundamental-frequency laser resonant cavity, the first side pump module and the second side pump module carry out thermal induced birefringence through the first lens, the second lens and the 90-degree rotator, fundamental-frequency laser is modulated into pulsed light by the acousto-optic Q-switch, fundamental-frequency light, after reflected by the polaroid and the second total reflection mirror, sequentially passes through the wave plate, the frequency doubling crystal and the sum frequency crystal, then the generated ultraviolet laser is output from the tail end of the sum frequency crystal. According to the invention, the laser beam quality of 1064 nm laser is improved, the conversion efficiency of the ultraviolet laser is improved, and the loss is reduced, so that the service life of the laser is longer, and the running of the laser is more stable.
Description
Technical field
The present invention relates to a kind of intracavity double frequency ultraviolet laser and method thereof of semiconductor diode profile pump.
Background technology
Ultra-Violet Laser has characteristics such as wavelength weak point, good condensing performance, photon energy height and cold treatment; Can also excite specific photochemical reaction, thereby important use arranged in fields such as VHD CD-ROM drive of future generation, fine materials processing, light printing, medical treatment, environmental monitoring, spectrum analysis and scientific researches.Dye laser, excimer laser, N with traditional generation Ultra-Violet Laser
2Laser and three, quadruple flash-lamp pump pumping solid laser are compared; The all-solid-state ultraviolet laser volume of semiconductor diode (LD) pumping is little, price is low, efficient is high, the life-span is long, reliability is high, repetition rate is high, good beam quality, power stability and working service are convenient; Therefore; Research to all-solid-state ultraviolet laser is a crucial problem, and oneself is through becoming a focus of laser research in recent years and application.The wavelength of Solid State Laser is difficult to utilize solid state laser directly to produce Ultra-Violet Laser nearly all in the near infrared region.The method that produces full solid state ultraviolet laser now is to utilize nonlinear crystal, and the near infrared light that solid state laser is produced carries out frequency multiplication and exports Ultra-Violet Laser after the equifrequent conversion frequently.Wherein utilizing nonlinear crystal that the 1064nm near-infrared laser is carried out frequency multiplication or produces Ultra-Violet Laser with frequency is a kind of very effective method.
Because application prospect that the LD pumped all-solid-state ultraviolet laser is wide and potential great market, many in the world countries all competitively carry out research and the product development to this laser.Mitsubishi Electric company, the Kubota of the Sony company photoelectricity laboratory of Japan, the all-solid-state ultraviolet laser products separately that released one after another such as U.S. Coherent company, Spectra-physics company, peak power output has surpassed 30W.China starts late aspect all-solid-state ultraviolet laser, and research level is bigger with external gap, much all is confined to experimental result, and seldom is converted into product, and current power output is very rare greater than the product level ultraviolet laser of 10 W.Therefore, research and development high-power all-solid-state ultraviolet laser realizes that for promoting national economy independent brand has great importance.
Summary of the invention
The objective of the invention is to deficiency, a kind of intracavity double frequency ultraviolet laser and method thereof of semiconductor diode profile pump is provided to prior art.
The intracavity double frequency ultraviolet laser of semiconductor diode profile pump comprises first completely reflecting mirror, first side pump module, first lens, second lens, 90 ° of polarization apparatuss, second side pump module, acoustooptic Q-switching, polarizer, second completely reflecting mirror, wave plate, two frequency-doubling crystals and frequency crystal and the 3rd completely reflecting mirrors that link to each other in order; Wherein first completely reflecting mirror and the 3rd completely reflecting mirror have been formed the basic frequency laser resonant cavity; After first side pump module and second side pump module carry out the thermally induced birefringence compensation through first lens, second lens, 90 ° of polarization apparatuss; The basic frequency laser that produces is modulated into pulsed light by acoustooptic Q-switching; Successively through wave plate, two frequency-doubling crystals and frequency crystal, the Ultra-Violet Laser of generation is from exporting with the tail end of frequency crystal after basic frequency laser process polarizer and the reflection of second completely reflecting mirror.
The intracavity frequency doubling Ultra-Violet Laser production method of semiconductor diode profile pump is: the method for bilateral pump module series connection structure and intracavity frequency doubling in the chamber is combined; Use first completely reflecting mirror, polarizer, second completely reflecting mirror and the 3rd completely reflecting mirror to form the basic frequency laser resonant cavity; Utilize powerful first side pump module and second side pump module in the chamber, to be connected in series and produce basic frequency laser; And between add first lens, second lens; Make first side pump module and second side pump module be in picture, add 90 ° of polarization apparatuss again, make radially changing each other of light field in first side pump module and second side pump module with tangential component; It is poor to introduce opposite phases so radially and between the tangential component, thereby realizes the compensation to thermal birefringence effect; Utilize acoustooptic Q-switching that basic frequency laser is modulated the generation pulse laser, the basic frequency laser after the modulation produces polarised light through polarizer and is reflected, and is reflected by second completely reflecting mirror afterwards; After wave plate changes the polarization direction, enter into two frequency-doubling crystal frequencys multiplication, again through producing Ultra-Violet Laser with the frequency crystal; Cut with Brewster's angle with an end of frequency crystal; So both reduced cavity loss, as the output of Ultra-Violet Laser, reduced requirement again the cavity mirror plating film.
The present invention utilizes powerful profile pump Nd:YAG module full-fledged, and power output is big, and stable performance can be frequency inverted enough fundamental frequency light energies are provided.Because Nd:YAG crystal volume is bigger, so the output beam quality of general side-pump laser device is relatively poor, and output light is not linearly polarized light.For this reason, we are through to the design of resonant cavity, better controlled the size of endovenous laser, thereby can improve the beam quality of 1064 nm laser greatly.We have obtained the required linearly polarized light of frequency multiplication through adding means such as polarizer and compensation thermal birefringence effect in addition.Thereby Ultra-Violet Laser forms laser output at the end generation deviation with the cutting of frequency crystal Brewster's angle; The mode of this coupling output can obviously reduce the wastage; Reduced plated film requirement simultaneously, made laser life-span longer, moved more stable chamber mirror and crystal.
Description of drawings
Fig. 1 is a semiconductor diode profile pump ultraviolet laser structural representation;
Fig. 2 be among the embodiment 1 gained 355nm laser output power with the change curve of pumping current;
Fig. 3 is the far-field spot figure of gained 355nm laser when maximum power output among the embodiment 1;
Fig. 4 is the beam quality M that gained 355nm laser is measured gained among the embodiment 1 when maximum power output
2The factor.
Embodiment
The present invention utilizes powerful profile pump Nd:YAG laser module to be pumping source, adopts the structure of two-rod series connection, utilizes the combined compensation thermal birefringence effect of 4f system and 90 ° of polarization apparatuss, obtains 355 nm Ultra-Violet Lasers with the mode of intracavity frequency doubling.Specify the present invention according to accompanying drawing below.
As shown in Figure 1, the intracavity double frequency ultraviolet laser of semiconductor diode profile pump comprises in order first completely reflecting mirror 1 that links to each other, first side pump module 2, first lens 3,4,90 ° of polarization apparatuss of second lens 5, second side pump module 6, acoustooptic Q-switching 7, polarizer 8, second completely reflecting mirror 9, wave plate 10, two frequency-doubling crystals 11 and crystal 12 and the 3rd completely reflecting mirror 13 frequently; Wherein first completely reflecting mirror 1 and the 3rd completely reflecting mirror 13 have been formed the basic frequency laser resonant cavity; After first side pump module 2 and second side pump module 6 carry out the thermally induced birefringence compensation through first lens 3,4,90 ° of polarization apparatuss 5 of second lens; The basic frequency laser that produces is modulated into pulsed light by acoustooptic Q-switching 7; Successively through wave plate 10, two frequency-doubling crystals 11 and frequency crystal 12, the Ultra-Violet Laser of generation is from exporting with the tail end of frequency crystal 12 after basic frequency laser process polarizer 8 and 9 reflections of second completely reflecting mirror.
The intracavity frequency doubling Ultra-Violet Laser production method of semiconductor diode profile pump is: the method for bilateral pump module series connection structure and intracavity frequency doubling in the chamber is combined; Use first completely reflecting mirror 1, polarizer 8, second completely reflecting mirror 9 and the 3rd completely reflecting mirror 13 to form the basic frequency laser resonant cavitys; Utilize powerful first side pump module 2 and second side pump module 6 in the chamber, to be connected in series and produce basic frequency laser; And between add first lens 3, second lens 4; Make first side pump module 2 and second side pump module 6 be in picture, add 90 ° of polarization apparatuss 5 again, make radially changing each other of light field in first side pump module 2 and second side pump module 6 with tangential component; It is poor to introduce opposite phases so radially and between the tangential component, thereby realizes the compensation to thermal birefringence effect; Utilize 7 pairs of basic frequency lasers of acoustooptic Q-switching to modulate the generation pulse laser, the basic frequency laser after the modulation produces polarised light through polarizer 8 and is reflected, afterwards by 9 reflections of second completely reflecting mirror; Behind wave plate 10 change polarization directions, enter into two frequency-doubling crystals, 11 frequencys multiplication, again through producing Ultra-Violet Lasers with frequency crystal 12; Cut with Brewster's angle with an end of frequency crystal 12; So both reduced cavity loss, as the output of Ultra-Violet Laser, reduced requirement again the cavity mirror plating film.
Embodiment:
The 1064nm laserresonator is made up of first completely reflecting mirror 1, polarizer 8, second completely reflecting mirror 9 and the 3rd completely reflecting mirror 13.The LD profile pump Nd:YAG module (2,6) of two rated output power 75 W is connected in the chamber, and crystalline size does
φ3 mm * 65 mm, doping content 0.6 at%.In order to compensate thermal birefringence effect; The 4f system that the lens (3,4) that we add two focal lengths between two modules be 50 mm are formed makes two Nd:YAG crystal bars in the module be in picture; The quartzy polarization apparatus (5) that adds one 90 ° again; Make radially changing each other of light field in two crystal bars with tangential component, like this in two crystal bars radially and can to introduce opposite phases between the tangential component poor, thereby realize compensation to thermal birefringence effect.
In order to obtain the 1064nm laser of linear polarization, we add polarizer 8 in the chamber, and place with Brewster's angle, like this can resonant cavity is folding, thus save the space.Two frequency-doubling crystals 11 and be placed in the long arm of resonant cavity with crystal 12 frequently.Wherein two frequency-doubling crystals are the lbo crystal of I class phase matched, also can be LBO, II class KTP, II class BBO or the II class CLBO of II class phase matched.Crystalline size is 3mm * 3mm * 15mm, cutting angle θ=90 °, φ=0 °.Crystal incident end promptly near an end of completely reflecting mirror (9), is coated with the 1064nm anti-reflection film, and exit end is coated with 1064nm and 532nm anti-reflection film.Crystal is placed in the constant temperature oven, and temperature remains on 150oC.With the frequency crystal be the lbo crystal of II class phase matched, also can be II class BBO or II class CLBO.Crystalline size is 3mm * 3mm * 15mm, cutting angle θ=42.6, φ=90 °.Wherein the end face of an end of crystal outgoing cuts with Brewster's angle, to realize the output coupling of 355nm laser.Crystal incident end is coated with 1064nm and 532nm anti-reflection film.Crystal is placed in the constant temperature oven equally, and temperature remains on 30 oC.
According to above-mentioned design, as shown in Figure 2, finally when repetition rate 10 kHz, obtained the 355nm laser output of the highest 15 W.This moment, the far-field spot of output beam was as shown in Figure 3.The beam quality M that measures gained during for peak power shown in Figure 4
2The factor, the beam quality of x direction and y direction is respectively 1.2 and 1.1.In the laser output power stability 8 hours less than 3%.
Pumping source adopts the Nd:YAG module of profile pump.Owing to the needs of phase matched, the 1064nm laser of fundamental frequency is necessary for linearly polarized light during frequency multiplication.But during laser operation, the Nd:YAG crystal can produce thermal birefringence effect, degenerates thereby cause polarization, so must compensate thermal birefringence effect.We connect two identical Nd:YAG modules in the chamber; And between add the 4f system that two identical lens form and make two modules be in picture; The quartzy polarization apparatus that adds one 90 ° again; Make radially changing each other of light field in two modules, compensate thereby the polarization that thermal birefringence effect causes degenerated with tangential component.
Resonant cavity adopts asymmetrical Ping-Ping cavity configuration.Through the size of adjustment resonant cavity than a long end length, the beam sizes at the size that can regulate 1064nm laser beam in the chamber easily, particularly Nd:YAG module and frequency-doubling crystal place has direct influence for shg efficiency.In order to obtain the 1064nm basic frequency laser of linear polarization, we have added a polarizer that Brewster's angle is placed in the chamber, utilize its deviation to light path simultaneously, and the laser entire length is reduced, and structure is compact more.Add acoustooptic Q-switching in the chamber and carry out frequency modulation(FM).1064nm laser after the modulation is obtained 532nm laser by two frequency-doubling crystal frequencys multiplication.Remaining 1064nm laser and 532nm laser get into together with the frequency crystal and obtain 355nm laser.Thereby the Ultra-Violet Laser that produces forms laser output at the end generation deviation with the cutting of frequency crystal Brewster's angle.
Further, two frequency-doubling crystals in the above-mentioned design are the lbo crystal of I class phase matched, also can be LBO, II class KTP, II class BBO or the II class CLBO of II class phase matched.With the frequency crystal be the lbo crystal of II class phase matched, also can be II class BBO or II class CLBO.
Can find out that from top instance method for designing of the present invention can realize high-power stable Ultra-Violet Laser output.
The foregoing description is used for the present invention that explains, rather than limits the invention, and in the protection range of spirit of the present invention and claim, any modification and change to the present invention makes all fall into protection scope of the present invention.
Claims (2)
1. the intracavity double frequency ultraviolet laser of a semiconductor diode profile pump is characterized in that comprising first completely reflecting mirror (1), first side pump module (2), first lens (3), second lens (4), 90 ° of polarization apparatuss (5), second side pump module (6), acoustooptic Q-switching (7), polarizer (8), second completely reflecting mirror (9), wave plate (10), two frequency-doubling crystals (11) and frequency crystal (12) and the 3rd completely reflecting mirror (13) that link to each other in order; Wherein first completely reflecting mirror (1) and the 3rd completely reflecting mirror (13) have been formed the basic frequency laser resonant cavity; After first side pump module (2) and second side pump module (6) carry out the thermally induced birefringence compensation through first lens (3), second lens (4), 90 ° of polarization apparatuss (5); The basic frequency laser that produces is modulated into pulsed light by acoustooptic Q-switching (7); Successively through wave plate (10), two frequency-doubling crystals (11) and frequency crystal (12), the Ultra-Violet Laser of generation is from exporting with the tail end of frequency crystal (13) after basic frequency laser process polarizer (8) and second completely reflecting mirror (9) reflection.
2. one kind is used the intracavity frequency doubling Ultra-Violet Laser production method of the semiconductor diode profile pump of laser according to claim 1; It is characterized in that the method for bilateral pump module series connection structure and intracavity frequency doubling in the chamber is combined; Use first completely reflecting mirror (1), polarizer (8), second completely reflecting mirror (9) and the 3rd completely reflecting mirror (13) to form the basic frequency laser resonant cavity; Utilize powerful first side pump module (2) and second side pump module (6) in the chamber, to be connected in series and produce basic frequency laser; And between add first lens (3), second lens (4); Make first side pump module (2) and second side pump module (6) be in picture, add 90 ° of polarization apparatuss (5) again, make radially changing each other of the middle light field of first side pump module (2) and second side pump module (6) with tangential component; It is poor to introduce opposite phases so radially and between the tangential component, thereby realizes the compensation to thermal birefringence effect; Utilize acoustooptic Q-switching (7) that basic frequency laser is modulated the generation pulse laser; Basic frequency laser after the modulation produces polarised light through polarizer (8) and is reflected, afterwards by second completely reflecting mirror (9) reflection, after wave plate (10) changes the polarization direction; Enter into two frequency-doubling crystals (11) frequency multiplication; Cut with Brewster's angle through a end again, so both reduced cavity loss with frequency crystal (12) generation Ultra-Violet Laser and frequency crystal (12); As the output of Ultra-Violet Laser, reduce requirement again to the cavity mirror plating film.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103107480A (en) * | 2013-01-31 | 2013-05-15 | 北京工业大学 | 266 nm full solid state ultraviolet laser for material elaborate processing |
| CN106654842A (en) * | 2017-03-03 | 2017-05-10 | 深圳市杰普特光电股份有限公司 | Laser device and frequency multiplication module thereof |
| CN107946891A (en) * | 2017-12-14 | 2018-04-20 | 湖北工业大学 | A kind of high-power ultraviolet solid-state laser |
| CN113346343A (en) * | 2021-05-11 | 2021-09-03 | 中国科学院上海光学精密机械研究所 | Intracavity cascade harmonic conversion tunable laser |
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| CN101383476A (en) * | 2007-09-07 | 2009-03-11 | 深圳市大族激光科技股份有限公司 | Frequency tripling solid laser device |
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| CN101383476A (en) * | 2007-09-07 | 2009-03-11 | 深圳市大族激光科技股份有限公司 | Frequency tripling solid laser device |
Non-Patent Citations (3)
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| DAVID R. DUDLEY ET AL.: "Q-switched diode-pumped Nd:YAG rod laser with output power of 420W at 532nm and 160W at 355nm", 《PROC. OF SPIE》 * |
| XIAN-KUN CHENG ET AL.: "High power and high beam quality CW green beam generated by diode-side-pumped intracavity frequency doubled Nd:YAG laser", 《OPTICS COMMUNICATIONS》 * |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103107480A (en) * | 2013-01-31 | 2013-05-15 | 北京工业大学 | 266 nm full solid state ultraviolet laser for material elaborate processing |
| CN106654842A (en) * | 2017-03-03 | 2017-05-10 | 深圳市杰普特光电股份有限公司 | Laser device and frequency multiplication module thereof |
| CN106654842B (en) * | 2017-03-03 | 2024-01-02 | 深圳市杰普特光电股份有限公司 | Laser and frequency doubling module thereof |
| CN107946891A (en) * | 2017-12-14 | 2018-04-20 | 湖北工业大学 | A kind of high-power ultraviolet solid-state laser |
| CN107946891B (en) * | 2017-12-14 | 2019-09-17 | 湖北工业大学 | A kind of high-power ultraviolet solid-state laser |
| CN113346343A (en) * | 2021-05-11 | 2021-09-03 | 中国科学院上海光学精密机械研究所 | Intracavity cascade harmonic conversion tunable laser |
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Application publication date: 20121017 |