CN103199429A - All-solid-state short wave ultraviolet laser source - Google Patents
All-solid-state short wave ultraviolet laser source Download PDFInfo
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- CN103199429A CN103199429A CN2012100064574A CN201210006457A CN103199429A CN 103199429 A CN103199429 A CN 103199429A CN 2012100064574 A CN2012100064574 A CN 2012100064574A CN 201210006457 A CN201210006457 A CN 201210006457A CN 103199429 A CN103199429 A CN 103199429A
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Abstract
The invention discloses an all-solid-state short wave ultraviolet laser source which comprises a near-infrared base frequency laser, a second harmonic frequency non-linear optical crystal, a light beam matching regulator control system, a fourth harmonic frequency non-linear optical crystal and a light beam splitting collimation reshaping system, wherein the second harmonic frequency non-linear optical crystal, the light beam matching regulator control system, the fourth harmonic frequency non-linear optical crystal and the light beam splitting collimation reshaping system are sequentially arranged along the laser output direction of the near-infrared base frequency laser. The near-infrared base frequency laser outputs a near-infrared laser, a second harmonic frequency laser is generated through the second harmonic frequency non-linear optical crystal and enters the fourth harmonic frequency non-linear optical crystal through the light beam matching regulator control system, a high-efficiency fourth harmonic frequency laser is generated, and output of a short wave ultraviolet laser with high power and high light beam quality is achieved through the light beam splitting collimation reshaping system. According to the all-solid-state short wave ultraviolet laser source, output of the high-efficiency near-infrared base frequency laser is achieved through precise wavelength choice technology and low-gain laser oscillation amplification technology, output of the high-efficiency second harmonic frequency laser is achieved through the non-linear optical crystal, then generation of the high-efficiency fourth harmonic frequency laser is achieved through the non-linear optical crystal, and therefore the output of the short wave ultraviolet laser with the high power and the high light beam quality is achieved.
Description
Technical field
The present invention relates to a kind of all solid state laser, particularly a kind of high power, high light beam quality, all solid state shortwave ultraviolet laser of practicability.
Background technology
The shortwave Ultra-Violet Laser refers to that wavelength is between the Ultra-Violet Laser of 200nm to 300nm, have that wavelength is short, photon energy is high, easily absorbed by material and plurality of advantages such as wave band is special, have major application in fields such as laser retrofit, front line science and national security and be worth.
All solid state laser (the solid state laser of semiconductor laser pumping, abbreviation DPL) has advantages such as volume is little, the life-span is long, efficient is high, beam quality is high, good stability, reliability height, easy to maintenance and electric driving is pollution-free, it is the important directions of laser technology development, utilize the humorous wave technology of DPL to realize that the output of shortwave Ultra-Violet Laser is the effective way that develops high power practicability shortwave ultra-violet laser source at present, has become the focus that each developed country competitively researches and develops.
At present, shortwave ultraviolet DPL research mainly is to utilize high power near-infrared Nd ion 1064nm laser through nonlinear optical crystal frequency multiplication repeatedly in the world, obtain the output of four-time harmonic such as 266nm shortwave Ultra-Violet Laser, its intermediate waves ultraviolet nonlinear optical crystal is core material, mainly comprise CLBO (CLBO CsLiB6O10) at present, BBO (barium metaborate BaB2O4), KDP (potassium dihydrogen phosphate KH2PO4), KABO (aluminium borate potassium K2Al2B2O7) crystal etc., though these crystal are excellent performance in some aspects, but consider that all there is weak point separately in combination property, still is difficult to realize the high power commercial application.Wherein, clbo crystal can be realized the output of high power 266nm laser, adopt clbo crystal to obtain the 266nm laser output of 40W as Japan in 2003, Chinese Academy of Sciences's clbo crystal that physics and chemistry adopts had obtained the output of 28W266nm laser in 2006, yet the above-mentioned result of study that is under the laboratory condition, because up to the present the clbo crystal deliquescence is extremely serious, and still can't effectively solve its deliquescence problem through a large amount of research, therefore be difficult to realize commercial application.Bbo crystal is the shortwave ultraviolet nonlinear crystalline material of mainly using at present, is described as " China card crystal ", and output can reach the W level, yet because the photorefractive effect of bbo crystal is serious, has limited the further raising of its power output.The KDP crystal is difficult to realize high-average power, high repetition running because thermal conductivity is low.The KABO crystal is because UV absorption is serious, and the above high-average power laser of the W level that still is unrealized is exported.In sum, produce 266nm shortwave Ultra-Violet Laser for 1064nm basic frequency laser four-time harmonic till now, W level product is only arranged, 3W 266nmDPL (model AVIA 266) as the research and development of U.S. Coherent company, the bottleneck of crucial crystalline material has limited development and the application of high power shortwave ultraviolet DPL, international community's breakthrough on material and the correlation technique that urgently waits in expectation.
CBO (cesium triborate CsB3O5) crystal has bigger nonlinear optical coefficients, outstanding ultraviolet band and sees through ability, very high resisting laser damage ability and faint hygroscopy, showing good prospects for application and ability aspect the ultraviolet frequencies conversion, is a kind of non-linear ultraviolet frequency-changer crystal of excellent combination property.Yet all the time and since its directly frequency multiplication match the quadruple of existing 1064nm basic frequency laser, thereby fail to be applied to shortwave ultraviolet band (CBO crystal double frequency mate cut-off wavelength be 273nm).Lbo crystal has high damage threshold, be to use commercialization nonlinear crystal the most frequently at present, excellent combination property, yet, its equally directly frequency multiplication match the quadruple of existing 1064nm basic frequency laser, thereby fail to be applied to shortwave ultraviolet band (lbo crystal frequency multiplication coupling cut-off wavelength be 277nm).
Summary of the invention
(1) technical problem that will solve
The objective of the invention is to produce the critical material bottleneck at present high power practicability shortwave Ultra-Violet Laser, by breaking through novel high-power high light beam quality fundamental frequency all-solid state laser technology, ultraviolet nonlinear optical crystal CBO, LBO etc. with excellent combination property are extended to high power shortwave ultra violet applications from the high power ultra violet applications innovatively, to realize a kind of high power, high light beam quality, practicability shortwave ultraviolet all-solid-state laser.
(2) technical scheme
In order to solve the problems of the technologies described above, the invention provides a kind of all solid state shortwave ultra-violet laser source, comprising:
Near-infrared basic frequency laser device and the two frequency multiplication nonlinear optical crystals, Beam matching regulator control system, quadruple nonlinear optical crystal and the light beam light splitting collimating and correcting system that arrange in regular turn at described near-infrared basic frequency laser device output laser direction;
Described near-infrared basic frequency laser device output near-infrared laser, produce two double-frequency lasers by two frequency multiplication nonlinear optical crystals, described two double-frequency lasers enter the quadruple nonlinear optical crystal by the Beam matching regulator control system, produce high efficiency quadruple shortwave Ultra-Violet Laser, realize high power, the output of high light beam quality shortwave Ultra-Violet Laser finally by crossing light beam light splitting shaping colimated light system.
Preferably, described near-infrared basic frequency laser device is near-infrared Nd:YAG laser, selects technology and low gain laser generation amplifying technique to realize Nd:YAG crystal 1112nm or 1116nm or 1123nm high power, the output of high light beam quality laser by accurate wavelength.
Preferably, the used laser crystal host material of described near-infrared basic frequency laser device also can adopt transparent YAG pottery, glass, vanadic acid yttrium (YVO except the YAG crystal
4), lithium yttrium fluoride (YLF) or vanadic acid gadolinium (GdVO
4).
Preferably, described two frequency multiplication nonlinear optical crystals adopt lbo crystal, carry out the noncritical phase matching of I class or the critical coupling of II class and realize two frequency multiplication 556nm or 558nm or the output of 561nm laser.
Preferably, described two frequency multiplication nonlinear optical crystals adopt ktp crystal.
Preferably, described quadruple nonlinear optical crystal adopts I class phase matched CBO crystal, realizes the output of quadruple 278nm or 279nm or 280.5nm laser.
Preferably, described quadruple nonlinear optical crystal adopts lbo crystal.
Preferably, described quadruple nonlinear optical crystal two logical light end faces plate the two point anti-reflection film of two frequencys multiplication and laser of quadruple respectively, perhaps incident end face plates the two point anti-reflection film that two double-frequency laser anti-reflection films, outgoing end face plate two frequencys multiplication and laser of quadruple, perhaps incident end face plates two double-frequency laser anti-reflection films, outgoing end face by the cutting of laser of quadruple Brewster's angle, and perhaps incident end face is pressed the cutting of laser of quadruple Brewster's angle by the cutting of two double-frequency laser Brewster's angles, outgoing end face.
Preferably, described near-infrared basic frequency laser device adopts the series connection of bilateral pumping shaven head, and the centre arranges the intracrystalline thermal birefringence effect of thermal effect compensation system balance; Acoustooptic Q-switching is realized the output of laser high-peak power Q impulse; Polarizer is used for obtaining linearly polarized laser; Realize single wavelength laser vibration, output pulse laser by chamber mirror, the design of output coupling mirror special film system; Realize power amplification by the side-pump laser head again, finally obtain high power, high light beam quality, the output of high-peak power near-infrared laser.
Preferably, described near-infrared basic frequency laser device adopts the series connection of bilateral pumping shaven head, and the centre arranges the intracrystalline thermal birefringence effect of thermal effect compensation system balance; Acoustooptic Q-switching is realized the output of laser high-peak power Q impulse; Insert etalon in the chamber and realize single oscillation wavelength; Two frequency multiplication nonlinear optical crystals are arranged in the basic frequency laser resonant cavity, realize the high efficiency intracavity frequency doubling, and two double-frequency lasers of generation are exported by dichroic mirror.
(3) beneficial effect
The present invention selects technology and low gain laser generation amplifying technique to realize Nd:YAG high power, high light beam quality 1112nm or 1116nm or the output of 1123nm near-infrared laser by accurate wavelength, use nonlinear optical crystal LBO, the KTP of commercialization to realize efficient two double-frequency lasers output, but realize CBO, the application of lbo crystal quadruple of excellent combination property practicability innovatively, thereby realize high power, the output of high light beam quality shortwave Ultra-Violet Laser.
Description of drawings
Fig. 1 is the structured flowchart of all solid state shortwave ultra-violet laser source of the present invention;
Fig. 2 is the schematic diagram of one embodiment of the invention;
Fig. 3 is the schematic diagram of another embodiment of the present invention.
Wherein, 1-near-infrared basic frequency laser source; 2-two frequency multiplication nonlinear optical crystals; 3-Beam matching regulator control system; 4-quadruple nonlinear optical crystal; 5-light beam light splitting shaping colimated light system; 6-side-pump laser head; 7-thermal effect compensation system; The 8-acoustooptic Q-switching; The 9-etalon; The 10-polarizer; M1-chamber mirror; The M2-speculum; The M3-dichroic mirror; The M4-speculum.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples are used for explanation the present invention, but do not limit the scope of the invention.
As shown in Figure 1, all solid state shortwave ultra-violet laser source of the present invention comprises: near-infrared basic frequency laser device 1 and the two frequency multiplication nonlinear optical crystals 2, Beam matching regulator control system 3, quadruple nonlinear optical crystal 4 and the light beam light splitting collimating and correcting system 5 that arrange in regular turn at described near-infrared basic frequency laser device 1 output laser direction; Described near-infrared basic frequency laser device 1 output near-infrared laser, produce two double-frequency lasers by two frequency multiplication nonlinear optical crystals 2, described two double-frequency lasers enter quadruple nonlinear optical crystal 4 by Beam matching regulator control system 3, produce high efficiency quadruple shortwave Ultra-Violet Laser, realize high power, the output of high light beam quality shortwave Ultra-Violet Laser finally by crossing light beam light splitting shaping colimated light system 5.
Described near-infrared basic frequency laser source 1 is to realize Nd:YAG crystal 1112nm or 1116nm or 1123nm high power, the output of high light beam quality laser by low gain laser generation amplifying technique and accurate wavelength selection technology; Described two frequency multiplication nonlinear optical crystals adopt at present the lbo crystal of practicability, carry out the noncritical phase matching of I class or the critical coupling of II class and realize two frequency multiplication 556nm or 558nm or the output of 561nm laser; Described quadruple nonlinear optical crystal adopts I class phase matched CBO crystal, realizes the output of quadruple 278nm or 279nm or 280.5nm laser.Because fundamental frequency near-infrared laser of the present invention adopts extremely ripe Nd:YAG laser crystal, therefore can obtain high-average power, the generation of high light beam quality basic frequency laser; Two frequencys multiplication, quadruple frequency crystal adopt LBO and the CBO crystal of excellent combination property, practicability; The output of shortwave Ultra-Violet Laser is based on two-stage frequency doubling technology route, and therefore all solid state shortwave ultraviolet laser of the present invention has the outstanding advantage that can realize high-average power, high light beam quality, practicability.
Described near-infrared basic frequency laser device 1 used laser crystal host material also comprises transparent YAG pottery, glass, vanadic acid yttrium (YVO except the YAG crystal
4), lithium yttrium fluoride (YLF) and vanadic acid gadolinium (GdVO
4) etc.
Described two frequency multiplication nonlinear optical crystals 2 also comprise ktp crystal except lbo crystal.
Described quadruple nonlinear optical crystal 4 also comprises lbo crystal except the CBO crystal.
Can the two logical light end faces of described quadruple nonlinear optical crystal plate the two point anti-reflection film of two frequencys multiplication and laser of quadruple respectively; Can plate two double-frequency laser anti-reflection films by incident end face, the outgoing end face plates the two point anti-reflection film of two frequencys multiplication and laser of quadruple; Can plate two double-frequency laser anti-reflection films by incident end face, the outgoing end face is pressed the cutting of laser of quadruple Brewster's angle; Also can cut by two double-frequency laser Brewster's angles by incident end face, the outgoing end face is pressed the cutting of laser of quadruple Brewster's angle.
Embodiment 1
As shown in Figure 2, the 278nm shortwave ultraviolet all-solid-state laser of the embodiment of the invention 1.Near-infrared basic frequency laser device 1 adopts 6 series connection of bilateral pumping shaven head, and the centre arranges the thermal birefringence effect in thermal effect compensation system 7 compensated crystal; Acoustooptic Q-switching 10 is realized the output of laser high-peak power Q impulse; Polarizer 10 is used for obtaining linearly polarized laser; By chamber mirror M1, the design of output coupling mirror OC special film system realizes single wavelength 1112nm laser generation; Realize the output of 40W 1112nm pulse laser.Realize power amplification by side-pump laser head 6 again, finally obtain 100W level high power, high light beam quality, the output of high-peak power near-infrared 1112nm laser.Produce two double-frequency lasers by two frequency multiplication nonlinear optical crystals 2 then, two frequency-doubling crystals adopt the non-critical temperature coupling of I class lbo crystal, realize that high efficiency 556nm laser produces; Two double-frequency lasers enter quadruple nonlinear optical crystal 4 by Beam matching regulator control system 3, quadruple frequency crystal 4 adopts I class coupling CBO crystal, the final high efficiency laser of quadruple of realizing produces, and realizes 10W level high power, the output of high light beam quality shortwave ultraviolet 278nm laser finally by crossing light splitting and beam shaping colimated light system 5.
As shown in Figure 3, the 280.5nm shortwave ultraviolet all-solid-state laser of the embodiment of the invention 2.Near-infrared basic frequency laser device adopts 6 series connection of bilateral pumping shaven head, and the centre arranges the thermal birefringence effect in thermal effect compensation system 7 compensated crystal; Acoustooptic Q-switching 10 is realized the output of laser high-peak power Q impulse; Insert etalon 9 in the chamber and realize single wavelength 1123nm vibration; Two frequency multiplication nonlinear optical crystals 2 adopt II class coupling lbo crystal, and it is arranged in the basic frequency laser resonant cavity, realizes the high efficiency intracavity frequency doubling; The two frequency multiplication 561nm laser that produce are by dichroic mirror M3 output.Enter quadruple nonlinear optical crystal 4 by Beam matching regulator control system 3 again, quadruple brilliant 4 adopts I class coupling CBO crystal, realize the output of quadruple 281nm laser, finally realize high power, the output of high light beam quality shortwave ultraviolet 280.5nm laser through light splitting and beam shaping colimated light system 5.
The 280.5nm shortwave ultraviolet all-solid-state laser of the embodiment of the invention 3, with embodiment 2 different be that by chamber mirror M1, the design of the special film of output coupling mirror OC and polarizer 10 system realizes that wavelength is the output of 1123nm basic frequency laser; Quadruple frequency crystal 4 adopts I class coupling lbo crystal to realize the output of shortwave ultraviolet 280.5nm laser in addition.
The 279nm shortwave ultraviolet all-solid-state laser of the embodiment of the invention 4, with embodiment 2 different be, realize the 1116nm laser generations by tuning etalon 9, two frequency-doubling crystals adopt II class coupling ktp crystal to realize the output of 558nm laser; Quadruple frequency crystal 4 adopts I class coupling lbo crystal, realizes the output of shortwave ultraviolet 279nm laser.
The present invention selects technology and low gain laser generation amplifying technique to realize Nd by accurate wavelength
3+Ion 1112nm or 1116nm or 1123nm high power, the output of high light beam quality laser, use nonlinear optical crystal LBO to realize efficient two frequency multiplication 556nm or 558nm or the output of 561nm laser, realize that by nonlinear optical crystal CBO efficient quadruple produces again, thereby realize high power, high light beam quality shortwave ultraviolet 278nm or 279nm or the output of 280.5nm laser.
The above only is preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the technology of the present invention principle; can also make some improvement and replacement, these improvement and replacement also should be considered as protection scope of the present invention.
Claims (10)
1. an all solid state shortwave ultra-violet laser source is characterized in that, comprising:
Near-infrared basic frequency laser device (1) and the two frequency multiplication nonlinear optical crystals (2), Beam matching regulator control system (3), quadruple nonlinear optical crystal (4) and the light beam light splitting collimating and correcting system (5) that arrange in regular turn at described near-infrared basic frequency laser device (1) output laser direction;
Described near-infrared basic frequency laser device (1) output near-infrared laser, produce two double-frequency lasers by two frequency multiplication nonlinear optical crystals (2), described two double-frequency lasers enter quadruple nonlinear optical crystal (4) by Beam matching regulator control system (3), produce high efficiency quadruple shortwave Ultra-Violet Laser, realize high power, the output of high light beam quality shortwave Ultra-Violet Laser finally by crossing light beam light splitting shaping colimated light system (5).
2. all solid state shortwave ultra-violet laser source as claimed in claim 1, it is characterized in that, described near-infrared basic frequency laser device (1) is near-infrared Nd:YAG basic frequency laser device, selects technology and low gain laser generation amplifying technique to realize Nd:YAG crystal 1112nm or 1116nm or 1123nm high power, the output of high light beam quality laser by accurate wavelength.
3. all solid state shortwave ultra-violet laser source as claimed in claim 2 is characterized in that, the used laser crystal host material of described near-infrared basic frequency laser device (1) also can adopt transparent YAG pottery, glass, vanadic acid yttrium (YVO except the YAG crystal
4), lithium yttrium fluoride (YLF) or vanadic acid gadolinium (GdVO
4).
4. as claim 1,2 or 3 described all solid state shortwave ultra-violet laser sources, it is characterized in that, described two frequency multiplication nonlinear optical crystals (2) adopt lbo crystal, carry out the noncritical phase matching of I class or the critical coupling of II class and realize two frequency multiplication 556nm or 558nm or the output of 561nm laser.
5. all solid state shortwave ultra-violet laser source as claimed in claim 4 is characterized in that, described two frequency multiplication nonlinear optical crystals (2) adopt ktp crystal.
6. as claim 1,2 or 3 described all solid state shortwave ultra-violet laser sources, it is characterized in that described quadruple nonlinear optical crystal (4) adopts I class phase matched CBO crystal, realizes the output of quadruple 278nm or 279nm or 280.5nm laser.
7. all solid state shortwave ultra-violet laser source as claimed in claim 6 is characterized in that, described quadruple nonlinear optical crystal (4) adopts lbo crystal.
8. all solid state shortwave ultra-violet laser source as claimed in claim 1, it is characterized in that, described quadruple nonlinear optical crystal (4) two logical light end faces plate the two point anti-reflection film of two frequencys multiplication and laser of quadruple respectively, perhaps incident end face plates the two point anti-reflection film that two double-frequency laser anti-reflection films, outgoing end face plate two frequencys multiplication and laser of quadruple, perhaps incident end face plates two double-frequency laser anti-reflection films, outgoing end face by the cutting of laser of quadruple Brewster's angle, and perhaps incident end face is pressed the cutting of laser of quadruple Brewster's angle by the cutting of two double-frequency laser Brewster's angles, outgoing end face.
9. all solid state shortwave ultra-violet laser source as claimed in claim 1 is characterized in that, described near-infrared basic frequency laser device (1) adopts bilateral pumping shaven head (6) series connection, and the centre arranges the thermal birefringence effect in thermal effect compensation system (7) compensated crystal; Acoustooptic Q-switching (8) is realized the output of laser high-peak power Q impulse; Polarizer (10) is used for obtaining linearly polarized laser; Realize single wavelength laser vibration, output pulse laser by chamber mirror (M1), the design of output coupling mirror (OC) special film system; Realize power amplification by side-pump laser head (6) again, finally obtain high power, high light beam quality, the output of high-peak power near-infrared laser.
10. all solid state shortwave ultra-violet laser source as claimed in claim 1 is characterized in that, described near-infrared basic frequency laser device (1) adopts bilateral pumping shaven head (6) series connection, and the centre arranges the thermal birefringence effect in thermal effect compensation system (7) compensated crystal; Acoustooptic Q-switching (8) is realized the output of laser high-peak power Q impulse; Insert etalon (9) in the chamber and realize single oscillation wavelength; Two frequency multiplication nonlinear optical crystals (2) are arranged in the basic frequency laser resonant cavity, realize the high efficiency intracavity frequency doubling, and two double-frequency lasers of generation are by dichroic mirror (M3) output.
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Cited By (9)
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| CN104538833A (en) * | 2015-01-19 | 2015-04-22 | 中国工程物理研究院激光聚变研究中心 | Quadruplicated-frequency laser terminal optical system |
| CN104810718A (en) * | 2015-04-28 | 2015-07-29 | 中国科学院上海光学精密机械研究所 | Nd:YLF laser frequency quadruplicating device and debugging method |
| CN105896261A (en) * | 2016-04-21 | 2016-08-24 | 中国科学院理化技术研究所 | All-solid-state wide tuning long wave infrared laser source |
| CN106299997A (en) * | 2016-09-08 | 2017-01-04 | 中国科学院理化技术研究所 | A kind of Solid State Laser source being applicable to produce polychrome Sodium guide star |
| CN106825943A (en) * | 2017-02-23 | 2017-06-13 | 江苏大学 | It is applied to PLC wafer lasers cutter sweep and the picosecond laser with the device |
| CN107315301A (en) * | 2017-07-20 | 2017-11-03 | 苏州贝林激光有限公司 | Ultrafast laser frequency tripling devices and methods therefor |
| CN108368991A (en) * | 2015-12-15 | 2018-08-03 | 飞利浦照明控股有限公司 | Multiplex pump Pudong Development Bank optical wand configuration for obtaining super brightness |
| CN113206431A (en) * | 2021-04-21 | 2021-08-03 | 中国科学院上海光学精密机械研究所 | Device for generating deep ultraviolet laser based on optical frequency recombination upconversion |
| CN115411600A (en) * | 2022-11-02 | 2022-11-29 | 安徽华创鸿度光电科技有限公司 | 266nm ultraviolet laser frequency combination technical device without walk-off and use method |
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| CN104538833A (en) * | 2015-01-19 | 2015-04-22 | 中国工程物理研究院激光聚变研究中心 | Quadruplicated-frequency laser terminal optical system |
| CN104538833B (en) * | 2015-01-19 | 2019-07-02 | 中国工程物理研究院激光聚变研究中心 | A kind of laser of quadruple final-optics system |
| CN104810718B (en) * | 2015-04-28 | 2018-11-20 | 中国科学院上海光学精密机械研究所 | Nd:YLF Lasers quadruple device and adjustment method |
| CN104810718A (en) * | 2015-04-28 | 2015-07-29 | 中国科学院上海光学精密机械研究所 | Nd:YLF laser frequency quadruplicating device and debugging method |
| US10544911B2 (en) | 2015-12-15 | 2020-01-28 | Signify Holding B.V. | Multiple pumping luminescent rod configuration for obtaining ultra-high brightness |
| CN108368991A (en) * | 2015-12-15 | 2018-08-03 | 飞利浦照明控股有限公司 | Multiplex pump Pudong Development Bank optical wand configuration for obtaining super brightness |
| CN105896261B (en) * | 2016-04-21 | 2019-05-28 | 中国科学院理化技术研究所 | All solid state broad tuning LONG WAVE INFRARED laser source |
| CN105896261A (en) * | 2016-04-21 | 2016-08-24 | 中国科学院理化技术研究所 | All-solid-state wide tuning long wave infrared laser source |
| CN106299997A (en) * | 2016-09-08 | 2017-01-04 | 中国科学院理化技术研究所 | A kind of Solid State Laser source being applicable to produce polychrome Sodium guide star |
| CN106299997B (en) * | 2016-09-08 | 2019-07-05 | 中国科学院理化技术研究所 | A kind of Solid State Laser source suitable for generating polychrome Sodium guide star |
| CN106825943B (en) * | 2017-02-23 | 2018-10-09 | 江苏大学 | Applied to PLC wafer lasers cutter device and with the picosecond laser of the device |
| CN106825943A (en) * | 2017-02-23 | 2017-06-13 | 江苏大学 | It is applied to PLC wafer lasers cutter sweep and the picosecond laser with the device |
| CN107315301A (en) * | 2017-07-20 | 2017-11-03 | 苏州贝林激光有限公司 | Ultrafast laser frequency tripling devices and methods therefor |
| CN113206431A (en) * | 2021-04-21 | 2021-08-03 | 中国科学院上海光学精密机械研究所 | Device for generating deep ultraviolet laser based on optical frequency recombination upconversion |
| CN113206431B (en) * | 2021-04-21 | 2022-09-02 | 中国科学院上海光学精密机械研究所 | Device for generating deep ultraviolet laser based on optical frequency recombination upconversion |
| CN115411600A (en) * | 2022-11-02 | 2022-11-29 | 安徽华创鸿度光电科技有限公司 | 266nm ultraviolet laser frequency combination technical device without walk-off and use method |
| CN115411600B (en) * | 2022-11-02 | 2023-02-28 | 安徽华创鸿度光电科技有限公司 | Separation-free 266nm ultraviolet laser frequency combination technology device and use method |
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Application publication date: 20130710 |