CN2833967Y - Single-mode green light laser for semiconductor pump - Google Patents
Single-mode green light laser for semiconductor pump Download PDFInfo
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- CN2833967Y CN2833967Y CN 200520041902 CN200520041902U CN2833967Y CN 2833967 Y CN2833967 Y CN 2833967Y CN 200520041902 CN200520041902 CN 200520041902 CN 200520041902 U CN200520041902 U CN 200520041902U CN 2833967 Y CN2833967 Y CN 2833967Y
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Abstract
The utility model discloses a single-mode double frequency green light laser device for a large power semiconductor pump, which adopts a semiconductor laser pump. The utility model comprises a 1064 nm fundamental wave laser medium, a light pump device, a laser resonant cavity composed of a plane and convex mirror sheet group, a Q-switch device, and a frequency doubling crystal, wherein a pair of lenses forming an expanding telescope is also arranged in the laser resonant cavity composed of a plane and convex mirror sheet group. The pair of the lenses together with the plane and convex mirror sheet group form a Z-shaped cavity structure. The expanding beam end of the expanding telescope faces towards a laser medium, and the hole shrinking end faces towards the frequency doubling crystal. The utility model has the advantages that the utility model can improve the quality of laser beams and the frequency doubling efficiency of a non-linear crystal. The utility model can also generate the high-power double frequency green light and the triple frequency ultraviolet light.
Description
Technical field
The utility model relates to a kind of solid frequency double laser, particularly relates to a kind of high-power frequency multiplication green (light) laser of single mode with semiconductor laser pumping.
Background technology
Most traditionally Solid Laser Elements and laser machine are the laser of lamp pumping.Pumping lamp mostly is from ultraviolet to infrared continuous wide spectrum light emitting source, and laser medium, abbreviation as Nd:YAG (Shen Nd ion Yttrium aluminium garnet) absworption peak is 560-600nm, 720-770nm and three narrow wave bands of 780-820nm, therefore, a large amount of unabsorbed pump lights can heat Nd:YAG rod and pumping cavity, make Nd:YAG form serious and unsettled thermal lensing effect.Vertical unstable thermal lensing effect makes laser produce multimode, pulse duration broadening and power instability; Laterally thermal lensing effect makes the big thermal gradient of solid laser medium generation, forms tangential and radial stress birefringence effect, makes laser polarization state instability even depolarization, causes the decline of laser delivery efficiency, power to reduce and instability.In addition, the efficient of lamp pumping is low, needs large power supply and big capacity cooling-water machine, and the fluctuating of temperature control causes the instability of laser output again.
In recent years, increasingly mature along with high power semiconductor laser diode array manufacturing technology, the pump light source that makes semiconductor laser be used as solid state laser becomes possibility.Semiconductor diode array emitted laser spectral width is 2.2nm, temperature is floated and is 0.25nm/ ℃, and can be transferred to the Nd:YAG center spectrum lambda c=807.6 ± 2nm of strong absorption bands to diode laser spectrum by temperature control, and be 2nm at the absorption line width of this wave band Nd:YAG, promptly diode laser pump light can be by the Nd:YAG hypersorption.Compare the lamp pumping, laser diode-pumpedly can reduce the thermal lensing effect of Nd:YAG and the thermic unsteadiness of laser greatly.Simultaneously, because laser diode-pumped efficient height has been saved the power supply power consumption, dwindled the capacity of cooling-water machine, thereby reduced the volume and weight of laser complete machine.Because the water temperature control precision can reach 0.1 ℃, improved the stability of laser output again greatly.
Further, be accompanied by the development of laser nonlinear crystal growing technology, at present, all solid state high power solid state laser spare and very rapid at the application development in fields such as metal mark, processing, wafer mark, cutting, meticulous little processing, IC circuit and element reparation, isotope separation, biomone detection, PCB (abbreviation of printed substrate) manufacturing, TFT (abbreviation of LCD) cutting and laser demonstration.According to the laser company of big nation in southern china Shenzhen, the said firm has developed continuous 5-10W green glow, transferred Q 15-60W green glow and has transferred Q 6W ultraviolet solid state laser.But, also unresolved beam quality, stability and laser cavity outer light beam modulation problems.
On the other hand, frequency doubling technologies in the laser cavity of the most employing of high power harmonic wave Solid State Laser product at present.Utilize the thermal lensing effect or the interior lens that insert of additional chamber of solid dielectric, form the high power density first-harmonic that focuses on, act on the non-linear harmonic wave crystal, produce the high efficiency double-frequency laser.This method is simple in structure, working stability, harmonic conversion efficient height, can obtain high power green light output.But, luminous exitance is increased, beam quality variation, general M because a large amount of high-rder mode vibrations in the chamber have been brought out in the strong-focusing effect
2=10-20.So harmonic wave laser is subjected to certain limitation on retrofit is used.
Summary of the invention
The purpose of this utility model is a kind of single mode frequency multiplication green (light) laser by semiconductor laser pumping of design, and its output is stable, beam quality and shg efficiency height, and industrial applicability is strong, and is easy to laser output is expanded to the ultraviolet band of frequency tripling.The technical solution of the utility model is as follows: a kind of single-mode green light laser of high power semi-conductor pumping, adopt semiconductor laser pumping, comprise 1064nm fundamental wave of laser medium, the optical pumping device, flat by comprising, the laserresonator that protruding lens set is formed, Q-switch and frequency-doubling crystal, it is characterized in that: putting down of this laserresonator, also be provided with in the protruding lens set and a pair ofly form the telescopical eyeglass of a reaming by eyeglass 2 and eyeglass 3, flat together with this, the convex lens sheet constitutes " Z " cavity structure together, and, the telescopical beam expanding end of described reaming is towards laser medium 5, and its shrinkage cavity end is then towards frequency-doubling crystal 8.As shown in Figure 1, the utility model green (light) laser comprises solid laser medium 5, the optical pumping device 6 that constitutes by laser diode, and by the laserresonator that eyeglass 1-4 forms, compositions such as Q-switch device 7 and frequency-doubling crystal 8 and the polarizer 9.The optical pumping that sends from laser diode couples light on the laser medium 5, and laser is excited to amplify in resonant cavity, and first-harmonic affacts on the frequency-doubling crystal 8 in the high power density chamber of generation, forms the highdensity frequency multiplication green laser output of high power.Wherein:
What solid laser medium 5 adopted is to produce the medium that wavelength is a 1064nm laser, therefore just can obtain required green glow (532nm) output by frequency multiplication;
The light source of optical pumping device 6 adopts diode laser matrix 10, comprises nine semiconductor laser diodes, is divided into three linear arrays, and symmetrical ring is around laser medium 5;
The laser resonant cavity that eyeglass 1, eyeglass 2, eyeglass 3 and eyeglass 4 are formed, as shown in Figure 1, be designed to " Z " type structure, be respectively: eyeglass 1 is 0 ° of 1064nm total reflection convex lens, eyeglass 2 is 15 ° of 1064nm total reflection concave mirrors, eyeglass 3 is the concave mirror of 15 ° of 1064nm total reflections and the high transmission of 532nm, and eyeglass 4 is 0 ° of 1064nm, the flat mirror of the double-colored total reflection of 532nm.Characteristics are: what constitute the middle oblique arm light path of " Z " die cavity is eyeglass 2 and eyeglass 3;
Be arranged in the eyeglass 2 of resonant cavity and the reaming telescope that eyeglass 3 constitutes certain multiplying power, so special cavity configuration can reach the basic mode vibration well in very big laser diode optical pumping current range (0-25A), improve beam quality;
The telescopical beam expanding end of reaming in the utility model is towards laser medium 5, to increase fundamental mode volume; Its shrinkage cavity end points to nonlinear crystal 8, and collimated light beam is as the criterion;
Frequency-doubling crystal 8 is located between the eyeglass 3,4, be a kind of 1064nm first-harmonic two frequency-doubling crystals, that adopt in the present invention is 1 class LBO, LBO is placed on the waist place of fundamental wave of laser, two perpendicular linear polarization first-harmonic photons synthesize a horizontal linear polarization second harmonic photon in lbo crystal, thereby obtain high power harmonic wave laser with two-way round trip intracavity frequency doubling mode, the unidirectional eyeglass 3 that sees through is exported;
What Q-switch device 7 adopted in the utility model is high frequency acoustooptic diffraction switch;
57 ° of parallel glass flat boards that the polarizer 9 is placed for vertical direction, the two sides is plated film not;
The utility model has designed three waists in laser cavity, can compatible high power two frequency multiplication green glows and the generation of frequency tripling ultraviolet light.The diameter of waist is also little than common, therefore, two frequency-doubling crystals is placed on first-harmonic waist place, and the high power density first-harmonic will produce the humorous weave efficiency of high conversion.
The good effect of the utility model green (light) laser has 3 points: (1) owing to adopt to expand the cavity body structure of bundle, and thermal lensing effect that can the balance solid laser medium reaches the basic mode vibration of large scale, thereby improved laser beam quality; (2) beam expanding end of the beam expanding cavity of the utility model design is towards solid laser medium, and the shrinkage cavity end points to non-linear frequency-doubling crystal, thus the shg efficiency that can increase the fundamental mode volume in the laser medium and improve nonlinear crystal; (3) can be provided with three waists owing in the utility model " Z " die cavity, thereby can compatible high power two frequency multiplication green glows and the generation of frequency tripling ultraviolet light.
Description of drawings
Fig. 1 is the index path of the semiconductor pumped single-mode green light laser of the utility model,
Fig. 2 is the semiconductor laser pump housing structural representation of the semiconductor pumped single-mode green light laser of the utility model.
The meaning that each legend mark is expressed as follows respectively in the accompanying drawing:
1----eyeglass 2----eyeglass 3----eyeglass 4----eyeglass
5----laser medium 6----optical pumping device 7----Q-switch 8----frequency-doubling crystal
9----polarizer 10----diode laser matrix 11----Nd:YAG rod
Embodiment
Below in conjunction with embodiment the light path principle figure of the semiconductor pumped single-mode green light laser of the utility model is further described: as shown in Figure 1, the semiconductor pumped single-mode green light laser of present embodiment comprises solid laser medium 5, is made up of optical pumping 8 grades that laser diode constitutes.The optical pumping that sends from laser diode couples light on the laser medium 5, laser is at device 6, the laserresonator of forming by eyeglass 1-4, be excited in Q-switch device 7 and the frequency-doubling crystal resonant cavity to amplify, first-harmonic affacts on the frequency-doubling crystal 8 in the high power density chamber that produces, and forms the highdensity frequency multiplication green laser output of high power.Below each parts is described in further detail:
What solid laser medium 5 adopted in the present embodiment is to produce the medium that wavelength is a 1064nm laser, therefore just can obtain required green glow (532nm) output by frequency multiplication.In the present embodiment, what laser medium 5 adopted is Nd:YAG rod 11, and wherein the concentration of Nd is 0.6%, and rod is of a size of Φ 2mm * 63mm, and is coated with the anti-reflection film of 1064nm in the both ends of the surface of Nd:YAG rod 11.
The light source of optical pumping device 6 adopts diode laser matrix 10, and in the present embodiment, diode laser matrix 10 comprises that nine continuous powers are the semiconductor laser diode of 17W, is divided into three linear arrays, and symmetrical ring is around Nd:YAG rod 11, and its gross power can reach 153W.What Fig. 2 showed is the structure example of this laser light pump chamber.
The resonant cavity of present embodiment laser is made up of eyeglass 1-4, and, as shown in Figure 1, be designed to " Z " type structure.In the present embodiment, eyeglass 1 is 0 ° of 1064nm total reflection convex lens, and eyeglass 2 is 15 ° of 1064nm total reflection concave mirrors, and eyeglass 3 is the concave mirror of 15 ° of 1064nm total reflections and the high transmission of 532nm, and eyeglass 4 is 0 ° of 1064nm, the flat mirror of the double-colored total reflection of 532nm.What particularly point out is: the eyeglass 2,3 that constitutes the middle oblique arm light path of " Z " die cavity is formed a scalable telescope, and its reaming end face is to laser medium 5, and its shrinkage cavity end is then towards frequency-doubling crystal 8.
Be arranged in the eyeglass 2 of resonant cavity and the reaming telescope that eyeglass 3 constitutes certain multiplying power, special cavity configuration like this can reach the basic mode vibration well in very big laser diode optical pumping current range (0-25A), improve beam quality, make the diameter of TEM mould in active medium reach φ 1.87mm, almost be full of the Nd:YAG rod 11 of diameter phi 2mm.The M square factor of green beam is 1.14.And the M square factor of international similar commercial lasers device is generally at 4-10, and beam quality improves 4-8 doubly.
The telescopical reaming end face of reaming in the present embodiment is to laser medium 5, to increase fundamental mode volume; Its shrinkage cavity end points to frequency-doubling crystal 8, collimated light beam is as the criterion, beam diameter is φ 0.6mm, the angle of divergence is 2.2mrd, fundamental power density on frequency-doubling crystal 8 is usually 2 times of commercial similar device, the incidence angle of dfundamental-harmonic pair frequency-doubling crystal 8 to the incidence angle of frequency-doubling crystal 8, makes shg efficiency up to 90% much smaller than common focused beam or waist light beam, and is higher by 50% than common intracavity frequency doubling efficient.
Frequency-doubling crystal 8 is located between the eyeglass 3,4, is a kind of 1064nm first-harmonic two frequency-doubling crystals, and that adopt in the present embodiment is 1 class LBO, press θ=90 °, =11.4 ° cutting is of a size of 4mm * 4mm * 12mm (HWL), both ends of the surface plating 1064nm and 532nm anti-reflection film.LBO is placed on the waist place of fundamental wave of laser, and two perpendicular linear polarization first-harmonic photons synthesize a horizontal linear polarization second harmonic photon in lbo crystal, thereby obtain high power harmonic wave laser with two-way round trip intracavity frequency doubling mode, and the unidirectional eyeglass 3 that sees through is exported.LBO needs cooling, temperature control by 25 ℃ of coupling cuttings of room temperature.
The frequency-doubling crystal 8 of present embodiment adopts LBO, under the effect of high power density first-harmonic, very high frequency-doubling conversion efficiency is arranged, and its damage threshold is 5 times of KTP, and is little one times to the absorptance KTP of light, helps improving the stability of green glow.
What Q-switch device 7 adopted in the present embodiment is high frequency acoustooptic diffraction switch, its radio-frequency power 40W, and frequency range 27-51MHz, radio-frequency (RF) impedance is 50 ohm.
57 ° of parallel glass flat boards that the polarizer 9 is placed for vertical direction, the two sides is plated film not.
Present embodiment has designed three waists in laser cavity, can compatible high power two frequency multiplication green glows and the generation of frequency tripling ultraviolet light.The diameter of waist is also little than common, therefore, two frequency-doubling crystals is placed on first-harmonic waist place, and the high power density first-harmonic will produce the humorous weave efficiency of high conversion.
Claims (6)
1, a kind of semiconductor pumped single-mode green light laser, adopt semiconductor laser pumping, comprise 1064nm fundamental wave of laser medium, the optical pumping device, flat by comprising, the laserresonator that protruding lens set is formed, Q-switch device and frequency-doubling crystal, it is characterized in that: putting down of this laserresonator, also be provided with pair of lenses [2] and eyeglass [3] in the protruding lens set and form the telescopical eyeglass of a reaming, flat together with this group, the convex lens sheet constitutes " Z " cavity structure together, and, the telescopical beam expanding end of described reaming is towards laser medium [5], and its shrinkage cavity end is then towards frequency-doubling crystal [8].
2, semiconductor pumped single-mode green light laser according to claim 1 is characterized in that described interior " Z " cavity structure that constitutes of laserresonator that comprises that flat, protruding lens set is formed can be provided with three waists.
3, semiconductor pumped single-mode green light laser according to claim 1, it is characterized in that forming between described two reaming telescope disks [2] and the eyeglass [3] the middle oblique arm light path of described " Z " die cavity, wherein eyeglass [2] is plating 1064nm total reflection concave mirror, and eyeglass [3] is plating 1064nm total reflection and the high transmission concave mirror of plating 532nm.
4, semiconductor pumped single-mode green light laser according to claim 1 is characterized in that described optical pumping device comprises nine semiconductor laser diodes, is divided into three diode laser matrixs [10], and symmetrical ring is around laser medium [5].
5, semiconductor pumped single-mode green light laser according to claim 1 is characterized in that described frequency-doubling crystal [8] is 1 class LBO.
6, semiconductor pumped single-mode green light laser according to claim 1 is characterized in that described frequency-doubling crystal [8] is positioned at the waist place of resonant cavity inner laser first-harmonic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520041902 CN2833967Y (en) | 2005-05-26 | 2005-05-26 | Single-mode green light laser for semiconductor pump |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520041902 CN2833967Y (en) | 2005-05-26 | 2005-05-26 | Single-mode green light laser for semiconductor pump |
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| CN2833967Y true CN2833967Y (en) | 2006-11-01 |
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| CN 200520041902 Expired - Lifetime CN2833967Y (en) | 2005-05-26 | 2005-05-26 | Single-mode green light laser for semiconductor pump |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104466644A (en) * | 2014-12-12 | 2015-03-25 | 江苏中科四象激光科技有限公司 | High-power 885 nm laser diode side pump Nd:YAG laser module |
| WO2019028679A1 (en) * | 2017-08-08 | 2019-02-14 | 大族激光科技产业集团股份有限公司 | Frequency-doubling laser and harmonic laser light generating method |
-
2005
- 2005-05-26 CN CN 200520041902 patent/CN2833967Y/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104466644A (en) * | 2014-12-12 | 2015-03-25 | 江苏中科四象激光科技有限公司 | High-power 885 nm laser diode side pump Nd:YAG laser module |
| WO2019028679A1 (en) * | 2017-08-08 | 2019-02-14 | 大族激光科技产业集团股份有限公司 | Frequency-doubling laser and harmonic laser light generating method |
| US10630044B2 (en) | 2017-08-08 | 2020-04-21 | Han's Laser Technology Industry Group Co., Ltd. | Frequency-doubled laser and method of generating harmonic laser |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |
Expiration termination date: 20150526 Granted publication date: 20061101 |