CN104466644A - High-power 885 nm laser diode side pump Nd:YAG laser module - Google Patents
High-power 885 nm laser diode side pump Nd:YAG laser module Download PDFInfo
- Publication number
- CN104466644A CN104466644A CN201410765491.9A CN201410765491A CN104466644A CN 104466644 A CN104466644 A CN 104466644A CN 201410765491 A CN201410765491 A CN 201410765491A CN 104466644 A CN104466644 A CN 104466644A
- Authority
- CN
- China
- Prior art keywords
- laser
- yag laser
- module
- side pump
- glass tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Lasers (AREA)
Abstract
A high-power 885 nm laser diode side pump Nd:YAG laser module comprises a glass tube (1), an Nd:YAG laser rod (2), a laser diode linear array (3) and a reflecting mirror (4), wherein the Nd:YAG laser rod (2) is installed in the glass tube; the laser diode linear array (3) is used for the Nd:YAG laser rod (2) and arranged along the circumference of the glass tube in an equally divided mode. A laser module body (9) is encapsulated by fixing plates (5) at the two sides, a module shell (6) at the upper portion and a module base plate (7) at the bottom. According to the laser module, the 885 nm semiconductor laser diode linear array pumping Nd:YAG crystal rod is adopted, compared with an 808 nm pumping laser module, the thermal load is effectively reduced nearly by 30%, and therefore the thermo-optic effect of the laser module is effectively reduced; pumping light is effectively absorbed in a double-passage mode, and the dosage concentration of the Nd:YAG laser rod is increased, so that laser output of high power and high electro-optic efficiency is achieved.
Description
Technical field
The present invention relates to high power 885nm Diode Side pump Nd:YAG laser module, belong to technical field of solid laser, be specially laser module field.
Background technology
Generally in series by several laser module for the high-power all-solid-state laser of industrial processes at present, the mode of being amplified by resonance or resonance realizes high-power output, has structure simple, the advantages such as easy realization.Process unit based on such laser is widely used in the fields such as automobile, railway, boats and ships, metallurgy, petrochemical industry, national defence and Aero-Space.Laser module is generally the conglomerate of pumping source (laser diode) and operation material (crystal bar), is the core component of laser.But laser obtains high power, high light beam quality exports and is limited to thermo-optic effect, although adopt different pumping configurations and gain media shape to reduce thermo-optic effect.Very one of the effective way reducing heat pipe effect adopts with method for pumping can be with to reduce Excited state.When adopting the laser diode-pumped Nd:YAG laser crystal of 808nm to export 1064nm laser, Excited state is 24%; And when adopting 885nm pumping, Excited state is 17%, thus effectively reduces heat and carry nearly 30%.And current commercial Nd:YAG laser module all adopts 808nm pumping, report there are no 885nm Diode Side pump Nd:YAG laser module.Adopt 885nm pump-coupling ground state particle to upper laser level on the other hand, make quantum efficiency close to 1, thus improve Laser output Slop efficiency.Employing 885nm laser diode end-face pump Nd:YAG laser bar obtains high power, high efficiency 1064nm Laser output has relevant report (R. Lavi, S. Jackel, A. Tal, E. Lebiush, Y. Tzuk, S. Goldring, Opt. Commun., 195,5 – 6,427 – 430 (2001); Maik Frede, Ralf Wilhelm, and Dietmar Kracht, Opt. Lett. 31,3618-3619 (2006); Fang-Qin, Li, et al. Chinese Physics Letters 26.11,114206 (2009)), but because Nd:YAG laser crystal is little compared with 808 places at 885nm place absorption coefficient, end pumping structure can increase the length of laser bar, and profile pump needs to solve the low difficult problem of pump light absorption efficiency.The present invention's employing passes twice through laser bar to 885nm laser diode linear array profile pump light by speculum and improves pump light absorption efficiency with increase laser bar doping content, realizes high power, high electrical efficiency Laser output.
Summary of the invention
In order to effectively reduce the thermo-optic effect of laser module, the object of the present invention is to provide high power 885nm Diode Side pump Nd:YAG laser module, realizing high-power output.
To achieve these goals, the technical solution adopted for the present invention to solve the technical problems is: high power 885nm Diode Side pump Nd:YAG laser module, comprise in glass tube, described glass tube and be equiped with Nd:YAG laser bar, be arranged with laser diode linear array for pumping Nd:YAG laser bar and speculum along glass tube circumference equal dividing, form laser module.
Described laser module is encapsulated by the module base plate of the fixed head at two ends, the module housing on top and bottom.
Described glass tube, Nd:YAG laser bar form watertight construction in conjunction with O type rubber ring and module end face fixed structure, pass into water to cool Nd:YAG laser bar in glass tube.
Described laser module forms dirt hermetically-sealed construction by module end face fixed structure, module housing and module base plate.
The water flowing in parallel with laser diode linear array of described laser bar cools: Nd:YAG laser bar adopts water flowing surface cool in glass tube; Laser diode linear array adopts the heat sink water flowing cooling of grand passage.
The Laser output centre wavelength of described laser diode linear array is 885nm, and laser linewidth is less than 2.5nm.
Described Nd:YAG laser bar is monocrystalline, pottery or nano material, and Nd:YAG laser bar doping content is more than or equal to 1 at.%.
Described speculum is level crossing or flat-recessed post mirror, speculum plating 885nm high-reflecting film, its reflectivity R>95%.
Described glass tube plating 885nm high transmittance film, its transmitance T>99%.
Described laser diode linear array quantity is odd number, and identical with number of mirrors.
The present invention, adopt 885nm semiconductor laser diode linear array pumping Nd:YAG crystal bar, compared to 808nm pumping laser module, effectively reduce heat and carry nearly 30%, thus effectively reduce laser module thermo-optic effect, adopt round trip effectively to absorb to pump light, and increase Nd:YAG laser bar doping content, realize high power, high electrical efficiency Laser output.
Accompanying drawing explanation
Fig. 1 is laser module schematic cross section of the present invention.
Fig. 2 is laser module vertical section of the present invention schematic diagram.
Fig. 3 is laser module of the present invention encapsulation schematic diagram.
Fig. 4 is that embodiment of the present invention laser module tests average resonant cavity schematic diagram.
Fig. 5 is embodiment laser module test input current versus output power curve.
Wherein 1-glass tube, 2-Nd:YAG laser bar, 3-laser diode linear array, 4-speculum, 5-module end face fixed head, 6-module housing, 7-module base plate, 8-1064nm high reflective mirror, 9-laser module, 10-outgoing mirror.
Embodiment
Known by Fig. 1, Fig. 2, high power 885nm Diode Side pump Nd:YAG laser module, comprises glass tube 1, the Nd:YAG laser bar 2 be installed in described glass tube 1, is arranged with laser diode linear array 3 for pumping Nd:YAG laser bar 2 and speculum 4 along glass tube circumference equal dividing; Form laser module 9.
Being known by Fig. 3, is laser module of the present invention encapsulation schematic diagram.Described laser module 9 is encapsulated by the module base plate 7 of the fixed head 5 at two ends, the module housing 6 on top and bottom.Glass tube 1, Nd:YAG laser bar 2 form watertight construction in conjunction with O type rubber ring and module end face fixed head 5.Laser module 9 forms dirt hermetically-sealed construction by module end face fixed head 5, module housing 6 and module base plate 7.
In the present embodiment, described glass tube 1 diameter is 10mm, and length is 168mm.Plated surface 885nm high transmittance film, transmitance is greater than 99.8%.Determine that Nd:YAG laser bar 2 is for monocrystalline, diameter is 6mm, and length is 188mm.Doping content is 1at.%, is 1.8cm to 885nm laser absorption maximum coefficient
-1.Laser diode linear array 3 output center wavelength is 885nm(25 DEG C), live width is less than 2.5nm, and peak power output is 400W, and pumping current is 37A.Adopt and tie up symmetric pump mode relative to laser bar 3.Described speculum 4 is flat-recessed cylindrical mirror, concave reflection pump light, and plating 885nm high-reflecting film, reflectivity is greater than 99.8%.Speculum makes the fast axle focus of pump light reflected be positioned at crystal bar center.The water flowing in parallel with laser diode linear array 3 of described laser bar 2 cools.Total flow is 40L/min.
Being known by Fig. 4, is that embodiment of the present invention laser module tests average resonant cavity schematic diagram.Resonant cavity is made up of high reflective mirror 8 and outgoing mirror 10, is level crossing.Laser module 9 provides gain media and pumping source, and with high reflective mirror 8, outgoing mirror 10 apart from equal.
Being known by Fig. 5, is the present embodiment laser module test input current versus output power curve.Build average symmetric cavity test power output, Resonant Intake System 600mm, the transmitance of outgoing mirror 10 is 20%.Maximum pumping current 37A, Output of laser power is 650W, and electrical efficiency is 20.1%.Compared to the 808nm pumping laser module of our company, there is little thermo-optic effect, higher electrical efficiency, thus obtain higher power output.
Claims (10)
1. high power 885nm Diode Side pump Nd:YAG laser module, comprises in glass tube (1), described glass tube and Nd:YAG laser bar (2) is housed, is arranged with laser diode linear array (3) for pumping Nd:YAG laser bar (2) and speculum (4) along glass tube (1) circumference equal dividing; Form laser module (9).
2. high power 885nm Diode Side pump Nd:YAG laser module according to claim 1, is characterized in that: described laser module is encapsulated by the module base plate (7) of the fixed head (5) at two ends, the module housing (6) on top and bottom.
3. high power 885nm Diode Side pump Nd:YAG laser module according to claim 1, it is characterized in that: described glass tube (1), laser bar (2) form watertight construction in conjunction with O type rubber ring and module end face fixed head (5), in glass tube (1), pass into water to cool Nd:YAG laser bar (2).
4. high power 885nm Diode Side pump Nd:YAG laser module according to claim 1, is characterized in that: described laser module forms dirt hermetically-sealed construction by module end face fixed structure (5), module housing (6) and module base plate (7).
5. high power 885nm Diode Side pump Nd:YAG laser module according to claim 1, is characterized in that: described laser bar (2) cools with laser diode linear array (3) water flowing in parallel: Nd:YAG laser bar (2) adopts water flowing surface cool in glass tube; Laser diode linear array (3) adopts the heat sink water flowing cooling of grand passage.
6. high power 885nm Diode Side pump Nd:YAG laser module according to claim 1, is characterized in that: the Laser output centre wavelength of described laser diode linear array (3) is 885nm, and laser linewidth is less than 2.5nm.
7. high power 885nm Diode Side pump Nd:YAG laser module according to claim 1, it is characterized in that: described Nd:YAG laser bar (2) is monocrystalline, pottery or nano material, and Nd:YAG laser bar (2) doping content is more than or equal to 1 at.%.
8. high power 885nm Diode Side pump Nd:YAG laser module according to claim 1, it is characterized in that: described speculum (4) is level crossing or flat-recessed post mirror, speculum (4) plating 885nm high-reflecting film, its reflectivity R>95%.
9. high power 885nm Diode Side pump Nd:YAG laser module according to claim 1, is characterized in that: described glass tube (1) plating 885nm high transmittance film, its transmitance T>99%.
10. high power 885nm Diode Side pump Nd:YAG laser module according to claim 1, it is characterized in that, described laser diode linear array (3) quantity is odd number, and identical with speculum (4) quantity.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410765491.9A CN104466644A (en) | 2014-12-12 | 2014-12-12 | High-power 885 nm laser diode side pump Nd:YAG laser module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410765491.9A CN104466644A (en) | 2014-12-12 | 2014-12-12 | High-power 885 nm laser diode side pump Nd:YAG laser module |
Publications (1)
Publication Number | Publication Date |
---|---|
CN104466644A true CN104466644A (en) | 2015-03-25 |
Family
ID=52912254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410765491.9A Pending CN104466644A (en) | 2014-12-12 | 2014-12-12 | High-power 885 nm laser diode side pump Nd:YAG laser module |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104466644A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107516812A (en) * | 2017-09-28 | 2017-12-26 | 中国计量科学研究院 | Laser |
CN108368991A (en) * | 2015-12-15 | 2018-08-03 | 飞利浦照明控股有限公司 | Multiplex pump Pudong Development Bank optical wand configuration for obtaining super brightness |
CN110911953A (en) * | 2019-11-05 | 2020-03-24 | 东方强光(北京)科技有限公司 | Water-cooling semiconductor light source side pump solid laser module |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2432704Y (en) * | 2000-06-23 | 2001-05-30 | 华北光电技术研究所 | Reflector |
US20030053500A1 (en) * | 2001-09-18 | 2003-03-20 | Dso National Laboratories | Laser |
US7082149B1 (en) * | 2003-06-24 | 2006-07-25 | Photonics Industries Int'l | High power diode side pumped solid state laser |
CN2833967Y (en) * | 2005-05-26 | 2006-11-01 | 上海致凯捷激光科技有限公司 | Single-mode green light laser for semiconductor pump |
CN101022204A (en) * | 2006-02-16 | 2007-08-22 | 中国科学院福建物质结构研究所 | Ring semiconductor pumping module |
CN101364705A (en) * | 2007-08-08 | 2009-02-11 | 中国科学院半导体研究所 | Diode laser pump head |
CN101740996A (en) * | 2009-12-29 | 2010-06-16 | 北京理工大学 | Semiconductor diode array side-pumped 2-micrometer laser module |
CN103746274A (en) * | 2013-12-27 | 2014-04-23 | 中国科学院理化技术研究所 | Side pumping laser module |
CN204230622U (en) * | 2014-12-12 | 2015-03-25 | 江苏中科四象激光科技有限公司 | High power 885nm Diode Side pump Nd:YAG laser module |
-
2014
- 2014-12-12 CN CN201410765491.9A patent/CN104466644A/en active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2432704Y (en) * | 2000-06-23 | 2001-05-30 | 华北光电技术研究所 | Reflector |
US20030053500A1 (en) * | 2001-09-18 | 2003-03-20 | Dso National Laboratories | Laser |
US7082149B1 (en) * | 2003-06-24 | 2006-07-25 | Photonics Industries Int'l | High power diode side pumped solid state laser |
CN2833967Y (en) * | 2005-05-26 | 2006-11-01 | 上海致凯捷激光科技有限公司 | Single-mode green light laser for semiconductor pump |
CN101022204A (en) * | 2006-02-16 | 2007-08-22 | 中国科学院福建物质结构研究所 | Ring semiconductor pumping module |
CN101364705A (en) * | 2007-08-08 | 2009-02-11 | 中国科学院半导体研究所 | Diode laser pump head |
CN101740996A (en) * | 2009-12-29 | 2010-06-16 | 北京理工大学 | Semiconductor diode array side-pumped 2-micrometer laser module |
CN103746274A (en) * | 2013-12-27 | 2014-04-23 | 中国科学院理化技术研究所 | Side pumping laser module |
CN204230622U (en) * | 2014-12-12 | 2015-03-25 | 江苏中科四象激光科技有限公司 | High power 885nm Diode Side pump Nd:YAG laser module |
Non-Patent Citations (2)
Title |
---|
晏思平,王德良等: "885nmLD热助推侧面泵浦Nd:YAG板条激光器", 《激光杂志》 * |
陈义红,苏勇: "大功率二极管泵浦固体激光器的研究", 《中国激光》 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108368991A (en) * | 2015-12-15 | 2018-08-03 | 飞利浦照明控股有限公司 | Multiplex pump Pudong Development Bank optical wand configuration for obtaining super brightness |
US10544911B2 (en) | 2015-12-15 | 2020-01-28 | Signify Holding B.V. | Multiple pumping luminescent rod configuration for obtaining ultra-high brightness |
CN107516812A (en) * | 2017-09-28 | 2017-12-26 | 中国计量科学研究院 | Laser |
CN110911953A (en) * | 2019-11-05 | 2020-03-24 | 东方强光(北京)科技有限公司 | Water-cooling semiconductor light source side pump solid laser module |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN202695968U (en) | Passive Q-switched laser based on bonded crystal | |
CN100563068C (en) | A kind of heat capacity type neodymium glass bar-shaped laser | |
CN100499297C (en) | Method for generating third harmonic laser | |
CN204230622U (en) | High power 885nm Diode Side pump Nd:YAG laser module | |
CN104466644A (en) | High-power 885 nm laser diode side pump Nd:YAG laser module | |
CN105305207A (en) | End-pumped single-pass traveling wave laser amplifier | |
CN104064955A (en) | Immersed cooling solid laser | |
Ma et al. | Doubly Q-switched GdVO4/Nd: GdVO4 laser with AO modulator and Cr4+: YAG saturable absorber under direct 879 nm diode pumping to the emitting level | |
CN100511881C (en) | Four-time harmonic solid laser | |
CN101267083B (en) | Full-solid multi-cavity combined intra-cavity frequency multiplication one-way overlapped output standard continuous green light laser | |
Yu et al. | High repetition rate 880 nm diode-directly-pumped electro-optic Q-switched Nd: GdVO4 laser with a double-crystal RTP electro-optic modulator | |
CN103022886A (en) | All-solid-state picosecond laser amplifier | |
CN110880672B (en) | High repetition frequency large energy nanosecond pulse laser and use method thereof | |
Qi et al. | High-energy, nanosecond orange laser at 604 nm based on Pr: YLF crystal at room temperature | |
CN103022870B (en) | Based on the high-power 355nm ultraviolet laser of battened construction | |
CN103022884B (en) | Disc laser emitting 305nm continuous laser by pumping of Pr:KYF at 482.5nm | |
CN101179175A (en) | Laser diode pumped solid state laser with high peak power | |
CN1870361A (en) | Semiconductor laser pumping double-channel passive Q regulation pulse sum frequency laser | |
CN104917053A (en) | V-type resonant cavity and laser based on V-type resonant cavity | |
CN105098591A (en) | Continuous wave self-Raman laser of wavelength-locked LD resonance pumping | |
Yin et al. | A novel compact side‐pumped bonded slab microchip laser | |
CN202616598U (en) | Passive mode-locking laser device | |
Qu et al. | InGaN-LD-Pumped ${\rm Pr}^{3+} $: ${\rm LiYF} _ {4} $ Continuous-Wave Laser at 915 nm | |
CN103066486B (en) | Large-power 1064 nm near-infrared laser based on wattle structure | |
CN202977964U (en) | Large-power 1064nm near-infrared laser based on wattle structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150325 |