CN1870361A - Semiconductor laser pumping double-channel passive Q regulation pulse sum frequency laser - Google Patents
Semiconductor laser pumping double-channel passive Q regulation pulse sum frequency laser Download PDFInfo
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- CN1870361A CN1870361A CN 200610098657 CN200610098657A CN1870361A CN 1870361 A CN1870361 A CN 1870361A CN 200610098657 CN200610098657 CN 200610098657 CN 200610098657 A CN200610098657 A CN 200610098657A CN 1870361 A CN1870361 A CN 1870361A
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Abstract
This invention relates to a semiconductor laser pump double-channel passive Q modulation pulse sum frequency laser, in which, a reflection cavity mirror and an output mirror constitute a first sub-resonant cavity, another reflection cavity mirror and an output mirror and a beam mirror make up of a second sub-resonant cavity and the two sub-resonant cavities have their own light transmission channels separately and passive Q modulation elements are selected, two kinds of gain medium and two resonant cavities are adjusted separately to reduce the difficulty of adjustment and the basic frequency beams of the two sub-resonant cavities are laminated fully on time and space so as to obtain the maximum pump efficiency and output peak value power.
Description
Technical field
The present invention relates to a kind of ld pumping solid state laser that obtains pulse and frequency laser output, belong to laser technology field.
Background technology
Along with the continuous development of laser technology, its application also more and more widely, and is simultaneously, also more and more higher to the requirement of laser parameter.In order to obtain high peak power, need Q-regulating technique.Q-regulating technique comprises that tilting mirror transfers Q, dyes and transfer Q, electric-optically Q-switched, acousto-optic Q modulation etc.Present the most frequently used accent Q mode is an acousto-optic Q modulation and electric-optically Q-switched, the acousto-optic Q modulation working stability, and general pulse duration can reach tens of ns, and frequency is not higher than 50KHz; Electric-optically Q-switched advantage is the repetition rate that can obtain narrower light pulse and Geng Gao, and still, electrooptic crystal fails and deliquescence easily, influences useful life.Transfer the Q mode all will use the electric drive pump, be called and initiatively transfer Q for these two kinds.The Q-regulating technique that a kind of absorption saturation effect of utilizing crystal is carried out appears in latest developments, for example uses crystal such as Cr ∷ YAG and V:YAG, and its mechanism of action is utilized the saturated absorption effect exactly, does not need the drive source control that adds, so the passive Q-adjusted technology of title.Passive Q-adjustedly compare with initiatively transferring Q, the passive Q-adjusted of crystal can obtain narrower pulse duration, higher repetition rate, and working stability, and the life-span is long.Therefore in material processed, fields such as laser interference have obtained using widely.Not only device volume is big and initiatively transfer Q, and at the cost height, and the drive source volume is big, so just limits the application of a lot of special dimensions.
The major programme of mixing laser device is an intracavity frequency doubling laser in the semiconductor laser pumping chamber, and this technology has been widely used in the product of semiconductor laser pumping intracavity frequency doubling red, green and blue light laser.Compare with intracavity frequency doubling laser, in the chamber and the research of frequency laser less, and by with the research that frequently obtains pulse laser still less, also have only and initiatively transfer Q and frequency laser, passive Q-adjustedly in the chamber also find no report so far with frequency laser.The known technology the most approaching with the present invention is document [Y.F.Chen, Optics Letters, 27,397 (2002)] provide a kind of Q and frequency laser structure of initiatively transferring, as shown in Figure 1, this laser is by pumping source 1, optical fiber 2, coupling mirror 3, reflecting cavity mirror 4, gain media 5, Q switched element 6, non-linear and crystal 7, resonator mirror 8 and output coupling mirror 9 are formed frequently initiatively, all elements all are arranged on the laser propagation optical axis that pumping source 1 sends, and are initiatively Q impulse and frequency lasers of a kind of all solid state single channel Compound Cavity.Two sub resonant cavities are straight chamber.In addition, this scheme only has a passage, the gain of wayward light, thus luminous efficiency decreases; This scheme only has a gain media, and emission wavelength is single.
Summary of the invention
Summarize, the defective that prior art exists has, active Q switched element price height, and also the drive source volume is big, is unfavorable for industrialization.Only have single transmission line, single pumping source, the single gain medium is difficult to control the gain of light, is difficult to access easily required and the frequency wavelength.In order to overcome the deficiency that prior art exists, we propose a kind of semiconductor laser pumping double-channel passive Q regulation pulse and frequency laser.
Structure of the present invention as shown in Figure 2, the present invention's laser is by semiconductor laser 10 and 18, optical coupling system 11 and 19, reflecting cavity mirror 12 and 20, gain media 13 and 21, passive Q-adjusted crystal 14 and 22 and bundle mirror 15 and crystal 16 and outgoing mirror 17 are formed frequently.Semiconductor laser 10 and 18 is a pumping source, 14 and 22 is passive Q-adjusted crystal, optical coupling system 11 and 19 effect are that the pump light that semiconductor laser 10 and 18 sends is coupled to respectively in gain media 13 and 21, reflecting cavity mirror 12 and outgoing mirror 17 are formed first sub resonant cavity, reflecting cavity mirror 20 and outgoing mirror 17 and and bundle mirror 15 form second sub resonant cavity, two sub resonant cavities have transmission line separately respectively, from with the bundle mirror 15 be the public part of two transmission lines to 17 sections of outgoing mirrors, be called public arm, in two sub resonant cavities, produce two different wave length λ
1, λ
2Fundamental frequency light, by passive Q-adjusted crystal 14 and 22, produce pulse laser respectively, in public arm, place and crystal 16 frequently, by with frequently obtain new wavelength X
3Pulse laser output to outside the chamber by outgoing mirror 17.
The course of work of laser of the present invention is that semiconductor laser 10 and 18 sends pump light, is coupled to respectively in gain media 13 and 21 by optical coupling system 11 and 19.Passive Q-adjusted crystal 14 is a kind of optical crystals that contain the doping of saturated absorption function, and its transmitance can increase along with the increase of energy density, and when reaching some very high values, transmitance is stabilized on the very high value, and this moment, material became transparent.According to this effect, passive Q-adjusted crystal 14 has just begun to stop fundamental frequency light λ in pumping
1Vibration produces, thereby the population that realizes upper laser level accumulates fast, and along with the increase of the population inversion in the gain media 13, the laser gain coefficient increases and gradually more than or equal to cavity loss, wavelength X
1Fundamental frequency light begin to produce vibration, and intracavity wavelength is λ
1Fundamental frequency light light intensity increase fast; Simultaneously, passive Q-adjusted crystal 22 has just begun to stop fundamental frequency light λ in pumping
2Vibration produces, thereby the population that realizes upper laser level accumulates fast, and along with the increase of the population inversion in the gain media 21, the laser gain coefficient increases gradually and more than or equal to cavity loss, wavelength is λ
2Fundamental frequency light begin to produce vibration, and intracavity wavelength is λ
2The basic frequency laser light intensity increase fast.Thereby cause the transmitance of two passive Q-adjusted crystal 14 and 22 to increase, so-called bleaching phenomenon occurs, loss this moment is very low, thereby produces the dual-wavelength high-power pulse in the chamber, when two fundamental frequency light by and frequently during crystal 16, produced and be different from wavelength X
2And λ
1Wavelength be λ
3Pulse and light frequently, output to outside the laserresonator the reducing of upper laser level population this moment by outgoing mirror 17, gain reduces, and two basic frequency laser light intensity diminish, and it is big that passive Q-adjusted crystal 14 and 22 loss become, finally cause stopping of laser output, finish the generation of a pulse.Said process ceaselessly repeats, and has just produced the train of impulses.The width of pulse depends on the length of the initial transmission and the laserresonator of adjusting Q crystal 14 and 22; The peak power of pulse depends on that the initial transmission of adjusting Q crystal 14 and 22 is the size of pumping light power; The repetition rate of pulse depends on the reflectivity of initial transmission, pump light intensities and the outgoing mirror 17 of adjusting Q crystal 14 and 22.
The present invention is the pulse fundamental frequency light that produces two wavelength in two identical or different gain medias respectively, and in resonant cavity, pass through and frequency crystal and frequency, obtained to be different from frequency double laser wavelength laser light source, made the laser application increase new pulse wavelength and select.Because two sub resonant cavities and two passive Q-adjusted elements are arranged, can regulate sub resonant cavity separately respectively, debug so easily.Because two sub resonant cavities are fixing separately, the stability of product also is better than prior art.And utilize two kinds of gain medias and utilize two resonant cavitys to regulate respectively, reduced the adjusting difficulty, be easy to ride gain, the basic frequency beam that can make two sub resonant cavities in time with the space on overlap more abundant, thereby obtain maximum pumping efficiency and output peak power.
Description of drawings
Fig. 1 is the background technology structural representation.Fig. 2 is a structural representation of the present invention.
Embodiment
See shown in Figure 2ly, the present invention's laser is by semiconductor laser 10 and 18, optical coupling system 11 and 19, reflecting cavity mirror 12 and 20, gain media 13 and 21, passive Q-adjusted crystal 14 and 22 and bundle mirror 15 and crystal 16 and outgoing mirror 17 are formed frequently.Wherein reflecting cavity mirror 12 and 20 is a kind of plano-concave mirrors, and the film system preparation of concave surface requires respectively to wavelength X
1And λ
2Two wavelength have the reflectivity more than or equal to 99.5%, and the pumping wavelength that requires the two-sided noise spectra of semiconductor lasers 10 and 18 of reflecting cavity mirror 12 and 20 to send simultaneously all has the transmitance more than or equal to 92%.Gain media 13 can be identical with 21 kinds, also can be different; Gain media 13 and 21 is selected different laser transition spectral lines respectively, and corresponding oscillation wavelength is λ
1And λ
2(λ
1≠ λ
2), produce and the frequency light wavelength lambda by the two
3, λ
1, λ
2And λ
3Satisfy and concern 1/ λ
3=1/ λ
2+ 1/ λ
1; Two logical light faces of gain media 13 prepare wavelength X respectively
1Anti-reflection film, two logical light faces of gain media 21 prepare wavelength X respectively
2Anti-reflection film, transmitance is all more than or equal to 99.8%.Passive Q-adjusted crystal 14 and 22 is respectively Cr:YAG and V:YAG, to wavelength X
1And wavelength X
2Transmitance respectively more than or equal to 97.5% and 98.5%.With bundle mirror 15 are level crossings, with a face relative with frequency crystal 16 on, on the direction of laser incidence angle θ preparation to wavelength X
2Have reflectivity more than or equal to 98.5%, simultaneously two-sided to wavelength X
1Has multilayer dielectric film more than or equal to 99% transmitance.Press and wavelength X with frequency crystal 16
1And λ
2Direction cutting with II saphe is frequently mated makes wavelength X
1And wavelength X
2With frequency crystal 16 in conllinear satisfy the position when propagating and be complementary and concern n
3/ λ
3=n
2/ λ
2+ n
1/ λ
1, n wherein
3, n
2And n
1It is respectively wavelength X
3, λ
2And λ
1With frequency crystal 16 in refractive index when propagating; With the two-sided preparation three-wavelength anti-reflection film of frequency crystal 16, transmitance is all more than or equal to 99%.Outgoing mirror 17 is a kind of level crossings, and film is to prepare to require near facing wavelength X with one of frequency crystal 16
1And λ
2All have reflectivity more than or equal to 95%, two-sided to the frequency light wavelength lambda
3All have more than or equal to 95% transmitance.
Further specify the present invention's technical scheme below, semiconductor laser 10 and 18 both can adopt single core laser, also can adopt the array laser, and the pump light wavelength of being launched is 808nm.Gain media 13 and 21 is Nd:YVO
4, its laser transition wavelength is selected 1064nm and 1342nm respectively, and pairing energy level transition is respectively
4F
3/2Arrive
4I
13/2With
4F
3/2Arrive
4I
11/2, be 593.5nm by the two generation and frequency optical wavelength; Two logical light faces of gain media 13 prepare the anti-reflection film to 1064nm respectively, and two logical light faces of gain media 21 prepare the anti-reflection film to 1342nm respectively, and transmitance is 99.8%.Reflecting cavity mirror 12 and 20 concave surface prepare respectively that reflectivity to wavelength 1064nm and 1342nm is 99.5%, two-sided preparation to the transmitance of wavelength 808nm is 92% multilayer dielectric film.Passive Q-adjusted crystal 14 and 22 adopts Cr:YAG and V:YAG respectively, for wavelength X
1And wavelength X
2Transmitance be respectively 97.5% and 98.5%.With bundle mirror 15 are level crossings, near and frequently crystal 16 a face, preparation has high reflectance more than or equal to 99.7%, two-sided wavelength 1064nm is had multilayer dielectric film more than or equal to 99% high permeability wavelength 1342nm on the direction of laser incidence angle θ; θ≤15 °.With frequency crystal 16 be KTP, wherein KTP is by cutting with the direction with frequency II saphe coupling of wavelength 1342nm and wavelength 1064nm, two logical light faces of this crystal all prepare the three-wavelength anti-reflection film to 1342nm, 1064nm and 593.5nm, and transmitance is 99.4%.Outgoing mirror 17 near and frequently crystal 16 the one sides preparation to the reflectivity of wavelength 1342nm be 99.5%, to the reflectivity of wavelength 1064nm be 95%, two-sided transmitance to 593.5nm is 95% multilayer dielectric film.When semiconductor laser 10 and 18 work, along with the increase of pump power, at two Nd:YVO
4In produce the fundamental frequency light of two wavelength of 1064nm and 1342nm respectively, in two sub resonant cavities, vibrate respectively, produce pulse fundamental frequency light by Cr:YAG and V:YAG respectively, when passing through ktp crystal at the overlapping place of two fundamental frequency light, produce the yellow laser of pulse of 593.5nm, by outgoing mirror 17 outputs.
Gain media 13 and 21 can also be selected Nd:YVO respectively for use
4And Nd:GdVO
4, its laser transition wavelength is selected 1064nm and 1341nm respectively, produced with the frequency optical wavelength be 593nm.
Claims (8)
1, a kind of semiconductor laser pumping double-channel passive Q regulation pulse and frequency laser, it is characterized in that, by two semiconductor lasers (10 and 18), two optical coupling systems (11 and 19), two reflecting cavity mirrors (12 and 20), two gain medias (13 and 21), two passive Q-adjusted crystal (14 and 22) and Shu Jing (15) with frequently crystal (16) and outgoing mirror (17) are formed; Semiconductor laser (10 and 18) is a pumping source: the effect of optical coupling system (11 and 19) is that the pump light that semiconductor laser (10 and 18) sends is coupled to respectively in the gain media (13 and 21); A reflecting cavity mirror (12) and outgoing mirror (17) are formed first sub resonant cavity, another reflecting cavity mirror (20) and outgoing mirror (17) and and Shu Jing (15) form second sub resonant cavity, two sub resonant cavities have transmission line separately respectively; From and Shu Jing (15) to outgoing mirror (17) section be the public part of two transmission lines, be called public arm; In two sub resonant cavities, produce two different wave length λ
1, λ
2Fundamental frequency light, respectively by one in two passive Q-adjusted crystal (14 and 22), produce pulse laser; In public arm, place and frequency crystal (16), by obtaining new wavelength X with frequency
3Pulse laser output to outside the chamber by outgoing mirror (17).
2, according to claim 1 and frequency laser is characterized in that, reflecting cavity mirror (12 and 20) is a kind of plano-concave mirror, and the film system preparation of concave surface requires respectively to wavelength X
1And λ
2Two wavelength have the reflectivity more than or equal to 99.5%, and the pumping wavelength that requires two-sided noise spectra of semiconductor lasers (10 and 18) to send simultaneously all has the transmitance more than or equal to 92%.
3, according to claim 1 and frequency laser is characterized in that, two gain medias (13 and 21) kind is identical, and is perhaps different.
4, according to claim 1 and frequency laser is characterized in that, two logical light faces of gain media (13) prepare wavelength X respectively
1Anti-reflection film, two logical light faces of gain media (21) prepare wavelength X respectively
2Anti-reflection film, transmitance is all more than or equal to 99.8%.
5, according to claim 1 and frequency laser is characterized in that, two passive Q-adjusted crystal (14 and 22) are to wavelength X
1And wavelength X
2Transmitance respectively more than or equal to 97.5% and 98.5%.
6, according to claim 1 and frequency laser is characterized in that, and Shu Jing (15) is a level crossing, with a face relative with frequency crystal (16) on, on the direction of laser incidence angle θ preparation to wavelength X
2Have reflectivity more than or equal to 98.5%, simultaneously two-sided to wavelength X
1Has multilayer dielectric film more than or equal to 99% transmitance.
7, according to claim 1 and frequency laser, it is characterized in that and the two-sided preparation of crystal (16) frequently to wavelength X
1, wavelength X
2And wavelength X
3Three-wavelength anti-reflection film, transmitance are all more than or equal to 99%.
8, according to claim 1 and frequency laser is characterized in that, outgoing mirror (17) is a kind of level crossing, and film is to prepare to require near facing wavelength X with one of frequency crystal (16)
1And λ
2All have reflectivity more than or equal to 95%, two-sided to the frequency light wavelength lambda
3All have more than or equal to 95% transmitance.
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| CN 200610098657 CN1870361A (en) | 2006-07-11 | 2006-07-11 | Semiconductor laser pumping double-channel passive Q regulation pulse sum frequency laser |
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| CN 200610098657 CN1870361A (en) | 2006-07-11 | 2006-07-11 | Semiconductor laser pumping double-channel passive Q regulation pulse sum frequency laser |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102545014A (en) * | 2010-12-13 | 2012-07-04 | 青岛大学 | Method for double-pulse laser with wavelengths of 1.0mu m and 1.3mu m |
| CN103022884A (en) * | 2012-12-26 | 2013-04-03 | 长春理工大学 | Disc laser emitting 305nm continuous laser by pumping of Pr:KYF at 482.5nm |
| CN105428989A (en) * | 2015-12-25 | 2016-03-23 | 山东神戎电子股份有限公司 | Method and device for improving passive Q-switched pulse time stability |
| CN105846305A (en) * | 2016-05-20 | 2016-08-10 | 中国人民解放军军事医学科学院 | Two-channel multi-wavelength pulse laser capable of realizing multi-working-mode switching control |
| CN114284849A (en) * | 2021-12-30 | 2022-04-05 | 云南大学 | Adjustable vortex phase orthogonal cylindrical vector laser based on zoom hollow optical pump |
-
2006
- 2006-07-11 CN CN 200610098657 patent/CN1870361A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102545014A (en) * | 2010-12-13 | 2012-07-04 | 青岛大学 | Method for double-pulse laser with wavelengths of 1.0mu m and 1.3mu m |
| CN103022884A (en) * | 2012-12-26 | 2013-04-03 | 长春理工大学 | Disc laser emitting 305nm continuous laser by pumping of Pr:KYF at 482.5nm |
| CN105428989A (en) * | 2015-12-25 | 2016-03-23 | 山东神戎电子股份有限公司 | Method and device for improving passive Q-switched pulse time stability |
| CN105846305A (en) * | 2016-05-20 | 2016-08-10 | 中国人民解放军军事医学科学院 | Two-channel multi-wavelength pulse laser capable of realizing multi-working-mode switching control |
| CN105846305B (en) * | 2016-05-20 | 2019-01-18 | 中国人民解放军军事医学科学院 | A kind of binary channels multi-wavelength pulse laser of multi-operation mode switching control |
| CN114284849A (en) * | 2021-12-30 | 2022-04-05 | 云南大学 | Adjustable vortex phase orthogonal cylindrical vector laser based on zoom hollow optical pump |
| CN114284849B (en) * | 2021-12-30 | 2024-01-09 | 云南大学 | Adjustable vortex phase orthogonal cylindrical column vector laser based on zooming hollow optical pumping |
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