CN110911953A - Water-cooling semiconductor light source side pump solid laser module - Google Patents
Water-cooling semiconductor light source side pump solid laser module Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/0407—Liquid cooling, e.g. by water
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/042—Arrangements for thermal management for solid state lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094038—End pumping
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Abstract
The invention introduces a water-cooled semiconductor light source side pump solid laser module, which belongs to the field of pump solid laser, and comprises a copper-clad plate, a glass tube, an electrode, a heat sink, a cavity, a lining cover, a water cover, a gland and a base, wherein the inside of the module adopts a multidirectional semiconductor light source pump solid working substance to generate laser with typical wavelength of 1064nm and the like, and the module is regulated by technologies such as Q-switching mode locking and the like to generate high single pulse energy under a pulse working mode or generate continuous output power under continuous electric power supply; the module comprises ceramic, electrodes and bar to form unit package, the unit, heat sink and copper clad laminate are combined into linear array to form pumping light source, and the pumping light source emits light with specific wave band under the condition of water and electricity supply. The product of the invention has stable optical output, is suitable for batch production, has stable power output, high coupling efficiency and good matching of the pumping beam and the cavity mode.
Description
Technical Field
The invention relates to the field of diode-pumped solid-state lasers, in particular to a water-cooled semiconductor light source side-pumped solid-state laser module, namely a laser comprising several water-cooled semiconductor light source side-pumped solid-state laser modules.
Background
DPSSL is called DiodepMumpSolidStateLaser in English, namely a diode-pumped solid-state laser, and is a novel laser which is the fastest in international development and widely applied in recent years. This type of laser has achieved a new development by using a semiconductor laser that outputs a fixed wavelength instead of a conventional krypton or xenon lamp to pump a laser crystal, and is referred to as a second-generation laser. The development of DPSSL is inseparable from the development of semiconductor lasers. In 1962, the first homojunction gallium arsenide semiconductor laser appeared, and in 1963, newman of america proposed a semiconductor as a pumping source of a solid laser for the first time. However, in the early days, the diode has not been mature as a pump source of the solid laser because of the poor performance of the diode. The quantum well semiconductor laser concept was proposed until 1978, and the use of MOCVD technology and the emergence of strained quantum well lasers in the early eighties led to a new step in the development of LDs. The technology of high-power LD and LD array is also gradually mature since the nineties, thereby greatly promoting the research of DPSSL.
DPSSL comprises a plurality of types, wherein a laser head of a Side Pump (Side Pump) solid-state laser generally comprises a Pump source formed by three diode Pump modules which are surrounded into a circle, and each Pump module comprises 3 diode linear arrays with micro lenses. The output power of each linear array is 20W on average, and the output wavelength is 808 nm. The device adopts the glass tube to design the pumping cavity and the refrigeration channel skillfully. Most of the surface of the glass tube is plated with a high reflection film with the wavelength of 808nm, and the rest part of the surface of the glass tube is plated with three antireflection films with the wavelength of 808nm at 120 degrees, so that a pumping cavity is formed. Light emitted by the diode pumping source is converged into the three long and narrow regions coated with the antireflection film through the three pairs of beam shaping lenses, and then penetrates through the tube wall of the glass tube to be absorbed by the crystal. Because most of the area of the glass tube is coated with the high-reflection film, the pump light is reflected back and forth in the pumping cavity after entering the pumping cavity until being fully absorbed by the crystal, and uniform gain distribution is formed on the cross section of the crystal. Meanwhile, the glass tube can also be used for refrigeration, and the cooling water passing through at high speed can rapidly take away the generated heat. YAG rod with effective size j3 × 63mm and doping concentration of 1.5 at% is used as crystal, and when the pump light power is 180W, 72W laser output is obtained, and the light-light conversion efficiency of the device (or module) is as high as 40%.
Currently, Q-switched lasers have many wavelengths including 266, 355, 523.5, 526.5, 532, 656.5, 660, 1047, 1053, 1064, 1313 and 1319nm, and are widely used in industrial processing and scientific research fields because of their high peak power and narrow pulse width.
At present, related solid laser modules in the prior art are only limited to models and are difficult to produce in batches; the existing modules (solid lasers) on the market have poor shock resistance caused by over-high precision; the DPSSL produced in batches in the market has the defects of low light-light conversion efficiency and poor stability of parts caused by aging of mechanical parts after long-term use; in the module in the prior art, because the internal pumping power is high, the condensing cavity is easy to cause short circuit due to thermal expansion; another disadvantage of the prior art is that it is difficult to fit other optical devices.
Disclosure of Invention
1. Technical problem to be solved
Aiming at the problems in the prior art, the invention aims to provide a water-cooled semiconductor light source side pump solid-state laser module which can solve or avoid the problems in the background technology, which are respectively listed as follows:
the structural components are relatively independent and detectable, and each part in the module can be tested and inspected through a specific clamp and a tool;
the mechanical structure is compact, simple and light, and the problem of poor shock resistance caused by overhigh module precision is solved by adopting weight reduction design at multiple positions;
the problem of mechanical part aging after the module is used for a long time is considered, and targeted material selection is adopted in advance, so that the stability of the part used for the module for a long time is ensured;
the pump structure is scientific and reasonable, the light-light conversion efficiency is not lower than 40% through a large amount of experimental verification, and the light-light conversion efficiency is even higher than 42% through experimental data analysis;
the design of a sectional type light-gathering cavity unique to the unit where the applicant is located is adopted, so that the risk of short circuit caused by high pump power inside the module and thermal expansion of the light-gathering cavity is greatly reduced;
water is injected into the module at a specific angle for cooling circulation through a stainless steel quick-screwing plug piece which is independently developed and designed below the module, and a client can design the laser cabin into an upper structure and a lower structure in use so as to conveniently realize water and electricity optical separation of the cabin;
the cooling passages of the pumping source and the working substance are connected in parallel, and can be flexibly adjusted according to the design, so that the problem of inflexible cooling of a series water path is avoided;
on the fixed laser module's of traditional water-cooling side pump front and back light-emitting mouth plane, three places have been machined and have been the support that special angle corresponds, can come the light-emitting plane at physics regulation module both ends and for the relative position in the light path through three pieces of screws of fixing in the support in the concrete light path is adjusted, reduce the regulation degree of difficulty of customer in the actual light path application and with other optical device's the cooperation degree of difficulty.
2. Technical scheme
In order to solve the above problems, the present invention adopts the following technical solutions.
A water-cooled semiconductor light source side pump solid laser module comprises a plurality of copper-clad plates, a plurality of glass tubes, a plurality of electrodes, a plurality of heat sinks, a cavity, a lining cover for mechanically fixing a baffle of a linear array sectional type light-gathering cavity on the baffle, a water cover connected with the baffle, a gland connected with the lining cover, a base of a fixed platform, a quick-screwing water nozzle and a quick-screwing water nozzle kit, wherein the quick-screwing water nozzle and the quick-screwing water nozzle kit are positioned at the lower side of the base and are connected with an external air pipe; the semiconductor packaging of the module pumps solid working substances on the side face in multiple directions, and outputs light energy with specific wavelength under the regulation of specific current and water cooling.
The preferable scheme is that a multidirectional semiconductor light source is adopted to pump solid working substances in the module to generate lasers with typical wavelengths of 532nm, 656.5nm, 660nm, 1047nm, 1053nm, 1064nm, 1313nm, 1319nm and the like, and the module is adjusted to generate high single pulse energy in a pulse working mode or generate continuous output power under continuous electric power supply through technologies of Q adjustment, mode locking and the like; the ceramic, the electrode and the bar form unit package, the unit, the heat sink and the copper-clad plate are combined into a linear array to form a pumping light source, and the pumping light source can emit light with a specific wave band under the normal water and electricity supply condition; the working substance is irradiated by light of a specific wave band in a certain cooling environment to spontaneously generate light with the specific wave band and specific light beam quality; the cavity is a sectional light-gathering cavity, the pumping light is gathered, and the pumping light is fully absorbed by the working substance through multiple reflection.
Preferably, the working substance is a YAG crystal, and is irradiated by light with a specific wave band under the environment including room temperature to spontaneously generate light with the specific wave band and specific light beam quality; a glass tube is arranged at the periphery of the YAG crystal, a cavity is arranged at the periphery of the glass tube, and flowable circulating cooling liquid is arranged in the glass tube; the glass tube is made of transparent materials; the heat sink, the baffle, the lining cover and the water cover are respectively positioned above the YAG crystal, and 2 pressing covers connected with the lining cover are respectively positioned at two ends of the YAG crystal;
further, the package includes a semiconductor unit package and/or a semiconductor line array package.
The packaging method of the semiconductor unit package comprises the following procedures:
a first step of forming a bump electrode on an electrode pad of a semiconductor cell;
a second step of attaching a conductive adhesive to the vicinity of the tip of the bump electrode;
a third step of aligning the bump electrode with the terminal electrode of the substrate, disposing the semiconductor unit on the substrate, and electrically connecting the bump electrode of the semiconductor unit and the terminal electrode of the substrate with each other via the conductive adhesive;
a fourth step of adjusting an encapsulating material comprising a mixture having a viscosity of 100 pas or less and a thixotropic index of 1.1 or less;
a fifth step of filling a gap between the semiconductor unit and the substrate with an encapsulating material;
and a sixth step of curing the encapsulating material to bond the semiconductor unit and the substrate.
Further, the semiconductor linear array package comprises:
the heat sink comprises a unit, 5 heat sinks, 5 copper clad plates, a plurality of ceramics and a plurality of bar line arrays, wherein the center lines of the copper clad plates are respectively spaced to form an angle of 72 degrees.
More preferably, the linear array circuits are connected in series.
In the application of the specific embodiment, the names of the four water-cooling semiconductor light source side pump solid laser modules are determined according to the output light power of the modules under the conditions of a resonant cavity with the length of 300mm, 20% front mirror output and 22A-25A current input, and are as follows: PM150, PM300, PM500, and PM 500-S.
Further, each structural component is relatively independently detectable or testable, and testing the developed module includes the following aspects:
firstly, adjusting a resonant cavity;
secondly, adjusting the module;
and thirdly, water and electricity are supplied for testing.
Furthermore, water is injected into the module at a specific angle through the stainless steel quick-screwing kit 211 below the module for cooling circulation, and the laser cabin is preferably designed into an upper structure and a lower structure, so that water and electricity light separation of the cabin is realized; the pump source is connected in parallel with the cooling channel of the working substance;
according to the invention, three supports corresponding to special angles are machined on the front and rear light outlet planes of the traditional water-cooling side pump fixed laser module, and the light outlet planes at two ends of the module and the relative positions of the light outlet planes in the light path are physically adjusted through three screws fixed in the supports.
3. Advantageous effects
Compared with the prior art, the advantages of the invention can be seen by the following three comparisons.
(1) Compared with a solid laser of a flash lamp pump, the invention has the advantages that:
① the conversion efficiency of the energy is high, because the electro-optic conversion efficiency of the semiconductor laser diode can reach more than 30%, which is much higher than the conversion efficiency of the general flash lamp, and because the output laser spectrum line of the semiconductor laser diode is narrow, and the central wavelength of the output laser and the absorption peak of the solid working substance can be accurately coincided by changing the composition and the structure of the active region or the working temperature, the conversion efficiency of the DPSSL is very high.
② compared with semiconductor laser diodes, DPSSL has several orders of magnitude narrower output laser lines, smaller laser divergence angles, higher temporal and spatial coherence, and easier access to higher output power.
③ frequency stability, stable working substance temperature because of less reactive heat generated by DPSSL in operation, and elimination of vibration effect because DPSSL can be used to prepare all-solid-state devices, a DPSSL using YAG and effective stabilization method has frequency up to 30Hz, and the frequency stability of general solid laser is not better than 17 kHz.
(2) Compared with the traditional equal-pump laser, the invention has the following advantages:
①, the service life of the traditional krypton or xenon lamp is only hundreds of hours, the longest is not more than 2000 hours, and the service life of the diode laser used for pumping is up to ten thousand hours, thereby greatly reducing the maintenance cost of users.
② the conversion efficiency of the traditional lamp pump laser is only about 3%, most of the energy emitted by the pump lamp is converted into heat energy, which causes great energy waste, while the LD used by DPSSL emits fixed laser with wavelength of 808nm absorbed by the laser crystal, the light-light conversion efficiency can reach more than 40%, which greatly reduces the operation cost.
③ is small and convenient for design miniaturization.A DPSSL laser is about 1/3 or less than the conventional lamp pump laser and is portable.
④ has high light-to-light conversion efficiency, good light beam quality, and high reliability.
(3) Compared with the prior laser of the same type, the invention has the following advantages:
① the structural components are relatively independent and detectable, and each component in the module can be tested and checked by a specific clamp and a tool;
② the mechanical structure is compact, simple and light, the weight reduction design is adopted at multiple places, the problem of poor shock resistance caused by over-high module precision is solved, the problem of mechanical part aging after the module is used for a long time is considered, the targeted material selection is adopted in advance, the stability of the part of the module used for a long time is ensured, the pump structure is scientific and reasonable, the light-light conversion efficiency is ensured through a large amount of experimental verification, and the light-light conversion efficiency is higher than 42% through analysis of some experimental data;
③, adopting unique sectional light-gathering cavity design, greatly reducing the risk of short circuit caused by high pump power inside the module and thermal expansion of the light-gathering cavity, injecting water into the module at a specific angle for cooling circulation through a stainless steel quick-screwing plug which is independently developed and designed below the module, and enabling a customer to design a laser cabin into an up-and-down structure in use so as to conveniently realize water and electricity light separation of the cabin;
④ the pump source and the cooling channel of the working substance are connected in parallel, which can be flexibly adjusted according to the design, avoiding the inflexible cooling problem of the serial water channel;
⑤ on the front and back light-emitting planes of the traditional water-cooling side pump fixed laser module, three supports corresponding to special angles are machined, the light-emitting planes at the two ends of the module and the relative positions in the light path can be adjusted physically through three screws fixed in the supports in the specific light path adjustment, and the adjustment difficulty of customers in the actual light path application and the matching difficulty of other optical devices are reduced.
Drawings
FIG. 1 is a schematic diagram of the internal structure of a preferred embodiment of the present invention;
FIG. 2 is a schematic overall structure of a preferred embodiment of the present invention;
FIG. 3 is a schematic diagram of a test embodiment of the present invention;
FIG. 4 is an exploded perspective view of a preferred embodiment of the present invention;
FIG. 5 is a front side view of a preferred embodiment of the invention in perspective;
FIG. 6 is a rear view of a preferred embodiment of the present invention;
FIG. 7 is a rear oblique view of a preferred embodiment of the present invention;
FIG. 8 is a schematic diagram of the overall structure of a preferred embodiment of a PM150 water-cooled semiconductor light source side-pumped solid state laser module according to the present invention;
FIG. 9 is a schematic diagram of the overall structure of a preferred embodiment of a PM300 water-cooled semiconductor light source side-pumped solid state laser module of the present invention;
FIG. 10 is a schematic diagram of the overall structure of a preferred embodiment of a PM500 water-cooled semiconductor light source side-pumped solid state laser module according to the present invention;
fig. 11 is a schematic diagram of the overall structure of a preferred embodiment of the PM500-S water-cooled semiconductor light source side-pumped solid-state laser module of the present invention.
The reference numbers in the figures illustrate:
101 copper clad laminate, 102 electrodes, 103YAG crystal, 104 glass tube, 105 heat sink, 106 cavity, 107 ceramic, 108 bar;
201 glass tube, 202YAG crystal, 203 heat sink, 204 cavity, 205 baffle, 206 lining cover, 207 water cover, 208 gland, 209 base, 210 quick-screwing water nozzle and 211 quick-screwing water nozzle kit;
301 water chiller, 302 red light indicator, 303 total reflection mirror, 304 semiconductor laser power supply, 305 module, 306 added lens, 307 photoelectric power meter.
Detailed Description
The drawings in the embodiments of the invention will be combined; the technical scheme in the embodiment of the invention is clearly and completely described; obviously; the described embodiments are only some of the embodiments of the invention; but not all embodiments, are based on the embodiments of the invention; all other embodiments obtained by a person skilled in the art without making any inventive step; all fall within the scope of protection of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "top/bottom", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "sleeved/connected," "connected," and the like are to be construed broadly, e.g., "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The first embodiment is as follows:
as shown in fig. 1 to 7, the water-cooled semiconductor light source side-pumped solid-state laser module provided in this embodiment is a water-cooled semiconductor light source side-pumped solid-state laser module, and includes a plurality of copper-clad plates 101, a plurality of glass tubes 104, a plurality of electrodes 102, a plurality of heat sinks 105, a cavity 106, a lining cover 206 for mechanically fixing a linear array sectional type light-gathering cavity baffle 205 on the baffle 205, a water cover 207 connected with the baffle 205, a gland 208 connected with the lining cover 206, a base 209 for fixing a platform, a quick-screwing water nozzle 210 and a quick-screwing water nozzle sleeve 211 located at the lower side of the base 209 and connected with an external air pipe;
the semiconductor packaging of the module pumps solid working substances on the side face in multiple directions, and outputs light energy with specific wavelength under the regulation of specific current and water cooling.
The preferable scheme is that a multidirectional semiconductor light source is adopted to pump solid working substances in the module to generate lasers with typical wavelengths of 532nm, 656.5nm, 660nm, 1047nm, 1053nm, 1064nm, 1313nm, 1319nm and the like, and the module is adjusted to generate high single pulse energy in a pulse working mode or generate continuous output power under continuous electric power supply through technologies of Q adjustment, mode locking and the like;
the ceramic 107, the electrode 102 and the bar 108 form unit packaging, the unit, the heat sink 105 and the copper-clad plate 101 are combined into a linear array to form a pumping light source, and the pumping light source can emit light with a specific wave band under the normal water and electricity supply condition;
the working substance is irradiated by light of a specific wave band in a certain cooling environment to spontaneously generate light with the specific wave band and specific light beam quality;
the cavity 106 is a sectional light-gathering cavity, and is used for gathering the pump light and reflecting the pump light for multiple times to realize the sufficient absorption of the working substance to the pump light.
In the present embodiment, as shown in fig. 1-2, the working substance is a YAG crystal 103202, and is irradiated with light of a specific wavelength band under a certain environment including room temperature, and spontaneously generates light having a specific wavelength band and a specific beam quality; a glass tube 201 is arranged at the periphery of the YAG crystal 202, a cavity 204 is arranged at the periphery of the glass tube 201, and circulating cooling liquid capable of flowing at a high speed is arranged in the glass tube 201; the glass tube 201 is made of transparent materials; the heat sink 203, the baffle 205, the lining cover 206 and the water cover 207 are respectively positioned above the YAG crystal 202, and 2 pressing covers 208 connected with the lining cover 206 are respectively positioned at two ends of the YAG crystal 202;
in the application of the specific embodiment, the names of the four water-cooling semiconductor light source side pump solid laser modules are determined according to the output light power of the modules under the conditions of a resonant cavity with the length of 300mm, 20% front mirror output and 22A-25A current input, and are as follows: PM150, PM300, PM500, and PM 500-S.
Further, each structural component is relatively independently detectable or testable, and testing the developed module includes the following aspects:
firstly, adjusting a resonant cavity;
secondly, adjusting the module;
and thirdly, water and electricity are supplied for testing.
Example two:
as shown in fig. 1, the water-cooled semiconductor light source side-pumped solid-state laser module provided by this embodiment includes a plurality of copper-clad plates 101, a glass tube 104, a plurality of electrodes 102, a plurality of heat sinks 105, a cavity 106, a lining cover 206 for mechanically fixing a linear array sectional type light-gathering cavity baffle 205 on the baffle 205, a water cover 207 connected with the baffle 205, a gland 208 connected with the lining cover 206, a base 209 of a fixed platform, a quick-screwing water nozzle 210 located at the lower side of the base 209 and connected with an external air tube, and a quick-screwing water nozzle sleeve 211;
the semiconductor packaging of the module pumps solid working substances on the side face in multiple directions, and outputs light energy with specific wavelength under the regulation of specific current and water cooling.
In the present embodiment, the package includes a semiconductor unit package and/or a semiconductor line package, as shown in fig. 1 to 7.
The packaging method of the semiconductor unit package comprises the following procedures:
a first step of forming a bump electrode 102 on an electrode 102 pad of a semiconductor cell;
a second step of attaching a conductive adhesive to the vicinity of the tip of the bump electrode 102;
a third step of aligning the bump electrode 102 with the terminal electrode 102 of the substrate, disposing the semiconductor unit on the substrate, and electrically connecting the bump electrode 102 of the semiconductor unit and the terminal electrode 102 of the substrate with a conductive adhesive;
a fourth step of adjusting an encapsulating material comprising a mixture having a viscosity of 100 pas or less and a thixotropic index of 1.1 or less;
a fifth step of filling a gap between the semiconductor unit and the substrate with an encapsulating material;
and a sixth step of curing the encapsulating material to bond the semiconductor unit and the substrate.
Example three:
similar to the embodiment, in the present embodiment, as shown in fig. 1 to 7, the difference is that the semiconductor linear array package includes:
the heat sink comprises a unit, 5 heat sinks 105, 5 copper clad laminates 101, a plurality of ceramics 107 and a plurality of bar 108 linear arrays, wherein the central lines of the copper clad laminates 101 are respectively spaced to form an angle of 72 degrees. In this embodiment, it is more preferable that the line circuits are connected in series.
Example four:
similar to the embodiment, in the embodiment, as shown in fig. 1 to 7, the difference is that water is injected into the module at a specific angle via a stainless steel quick-screwing kit 211 below the module for cooling circulation, and the laser cabin is preferably designed into an upper and lower structure to realize water and electricity optical separation of the cabin;
the pump source is connected in parallel with the cooling channel of the working substance;
on the front and back light-emitting port planes of the traditional water-cooling side pump fixed laser module, three supports corresponding to special angles are machined, and the light-emitting planes at two ends of the module and the relative positions of the light-emitting planes in the light path are physically adjusted through three screws fixed in the supports.
Example five:
similar to the embodiment, in this embodiment, as shown in fig. 8, the names of the four water-cooled semiconductor light source side-pumped solid-state laser modules are determined according to the output light power of the module under the condition of the resonant cavity with the length of 300mm, the output of the 20% front mirror, and the input of the current of 22A-25A, and are as follows: and PM 150.
Example six:
similar to the embodiment, in this embodiment, as shown in fig. 9, the names of the four water-cooled semiconductor light source side pump solid-state laser modules are determined according to the output light power of the module under the condition of the resonant cavity with the length of 300mm, the output of the 20% front mirror, and the input of the current of 22A-25A, and are as follows: and (7) PM 300.
Example seven:
similar to the embodiment, in this embodiment, as shown in fig. 10, the names of the four water-cooled semiconductor light source side-pumped solid-state laser modules are determined according to the output light power of the module under the condition of the resonant cavity with the length of 300mm, the output of the 20% front mirror, and the input of the current of 22A-25A, and are as follows: and (5) PM 500.
Example eight:
similar to the embodiment, in this embodiment, as shown in fig. 11, the names of the four water-cooled semiconductor light source side pump solid-state laser modules are determined according to the output light power of the module under the condition of the resonant cavity with the length of 300mm, the output of the 20% front mirror, and the input of the current of 22A-25A, and are as follows: PM 500-S.
The above are merely preferred embodiments of the present invention; the scope of the invention is not limited thereto. Any person skilled in the art should be able to cover the technical scope of the present invention by equivalent or modified solutions and modifications within the technical scope of the present invention.
Claims (10)
1. The utility model provides a water-cooling semiconductor light source side pump solid laser module which characterized in that:
the device comprises a plurality of copper-clad plates (101), a plurality of glass tubes (104), a plurality of electrodes (102), a plurality of heat sinks (105), a cavity (106), a lining cover (206) for mechanically fixing a baffle (205) of a linear array sectional type light-gathering cavity on the baffle (205), a water cover (207) connected with the baffle (205), a gland (208) connected with the lining cover (206), a base (209) of a fixed platform, a quick-screwing water nozzle (210) and a quick-screwing water nozzle kit (211), wherein the quick-screwing water nozzle kit is positioned at the lower side of the base (209) and is connected with an external air pipe;
the semiconductor packaging of the module pumps solid working substances on the side face in multiple directions, and outputs light energy with specific wavelength under the regulation of specific current and water cooling.
2. The water-cooled semiconductor light source side-pumped solid-state laser module according to claim 1, characterized in that:
the module internally adopts a multi-direction semiconductor light source to pump a solid working substance to generate laser with typical wavelengths of 532, 656.5, 660, 1047, 1053, 1064, 1313, 1319nm and the like, and the module is regulated to generate high single pulse energy in a pulse working mode or generate continuous output power under continuous electric power supply through technologies of Q regulation, mode locking and the like;
the ceramic (107), the electrode (102) and the bar (108) form unit packaging, the unit, the heat sink (105) and the copper-clad plate (101) are combined into a linear array to form a pumping light source, and the pumping light source can emit light with a specific wave band under the condition of water and electricity supply;
the working substance is irradiated by light of a specific wave band in a certain cooling environment to spontaneously generate light with the specific wave band and specific light beam quality;
the cavity (106) is a sectional type light-gathering cavity, and is used for converging the pump light and realizing the sufficient absorption of the working substance to the pump light through multiple reflections.
3. The water-cooled semiconductor light source side-pumped solid-state laser module according to claim 2, characterized in that: the working substance is a YAG crystal (103) (202), and is irradiated by light with a specific wave band under a certain environment including room temperature to spontaneously generate light with the specific wave band and specific light beam quality; a glass tube (201) is arranged on the periphery of the YAG crystal (202), a cavity (204) is arranged on the periphery of the glass tube (201), and flowable circulating cooling liquid is arranged in the glass tube (201); the glass tube (201) is made of transparent materials; the heat sink (203), the baffle (205), the lining cover (206) and the water cover (207) are respectively positioned above the YAG crystal (202), and 2 pressing covers (208) connected with the lining cover (206) are respectively positioned at two ends of the YAG crystal (202).
4. The water-cooled semiconductor light source side-pumped solid-state laser module according to claim 2, characterized in that: the package includes a semiconductor unit package and or a semiconductor linear array package.
5. The water-cooled semiconductor light source side-pumped solid-state laser module according to claim 4, wherein the packaging method of the semiconductor unit package comprises the following steps:
a first step of forming a bump electrode (102) on an electrode (102) pad of the semiconductor unit;
a second step of attaching a conductive adhesive to the vicinity of the tip of the bump electrode (102);
a third step of aligning the bump electrode (102) with the terminal electrode (102) of the substrate, disposing the semiconductor unit on the substrate, and electrically connecting the bump electrode (102) of the semiconductor unit and the terminal electrode (102) of the substrate via the conductive adhesive;
a fourth step of adjusting an encapsulating material comprising a mixture having a viscosity of 100 pas or less and a thixotropic index of 1.1 or less;
a fifth step of filling the sealing material into a gap between the semiconductor unit and the substrate;
and a sixth step of curing the encapsulating material to bond the semiconductor unit and the substrate.
6. The water-cooled semiconductor light source side-pumped solid state laser module of claim 4, wherein the semiconductor linear array package comprises:
the copper-clad plate is composed of a unit, 5 heat sinks (105), 5 copper-clad plates (101), a plurality of ceramics (107) and a plurality of bar (108) linear arrays, and the central lines of the copper-clad plates (101) are spaced at an angle of 72 degrees.
7. The water-cooled semiconductor light source side-pumped solid-state laser module according to any one of claims 2 to 6, characterized in that: the linear array circuits are connected in series.
8. The water-cooled semiconductor light source side-pumped solid-state laser module according to claim 2, wherein the names of the four water-cooled semiconductor light source side-pumped solid-state laser modules are determined according to the output optical power of the module under the condition of 300mm length resonant cavity, 20% front mirror output and 22A-25A current input, and are as follows: PM150, PM300, PM500, and PM 500-S.
9. The water-cooled semiconductor light source side-pumped solid state laser module of claim 2, wherein each structural component is independently detectable or testable, and the testing of the developed module comprises the following aspects:
firstly, adjusting a resonant cavity;
secondly, adjusting the module;
and thirdly, water and electricity are supplied for testing.
10. The water-cooled semiconductor light source side-pumped solid-state laser module according to claim 2, characterized in that:
water is injected into the module at a specific angle through a stainless steel quick-screwing sleeve (211) below the module for cooling circulation, and the laser cabin is preferably designed into an upper structure and a lower structure, so that water and electricity light separation of the cabin is realized;
the pump source is connected in parallel with the cooling channel of the working substance;
on the front and back light-emitting port planes of the traditional water-cooling side pump fixed laser module, three supports corresponding to special angles are machined, and the light-emitting planes at two ends of the module and the relative positions of the light-emitting planes in the light path are physically adjusted through three screws fixed in the supports.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911071991.1A CN110911953A (en) | 2019-11-05 | 2019-11-05 | Water-cooling semiconductor light source side pump solid laser module |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911071991.1A CN110911953A (en) | 2019-11-05 | 2019-11-05 | Water-cooling semiconductor light source side pump solid laser module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114361934A (en) * | 2022-01-07 | 2022-04-15 | 无锡亮源激光技术有限公司 | Novel high-power semiconductor laser device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050201442A1 (en) * | 2004-03-10 | 2005-09-15 | Pavilion Integration Corporation | Solid-state lasers employing incoherent monochromatic pump |
| CN101364705A (en) * | 2007-08-08 | 2009-02-11 | 中国科学院半导体研究所 | Diode laser pump head |
| CN203026788U (en) * | 2012-05-17 | 2013-06-26 | 东方强光（北京)科技有限公司 | Semiconductor laser side pump device |
| CN103915751A (en) * | 2013-01-05 | 2014-07-09 | 中国科学院光电研究院 | Semiconductor laser side pump module |
| CN104466644A (en) * | 2014-12-12 | 2015-03-25 | 江苏中科四象激光科技有限公司 | High-power 885 nm laser diode side pump Nd:YAG laser module |
-
2019
- 2019-11-05 CN CN201911071991.1A patent/CN110911953A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050201442A1 (en) * | 2004-03-10 | 2005-09-15 | Pavilion Integration Corporation | Solid-state lasers employing incoherent monochromatic pump |
| CN101364705A (en) * | 2007-08-08 | 2009-02-11 | 中国科学院半导体研究所 | Diode laser pump head |
| CN203026788U (en) * | 2012-05-17 | 2013-06-26 | 东方强光（北京)科技有限公司 | Semiconductor laser side pump device |
| CN103915751A (en) * | 2013-01-05 | 2014-07-09 | 中国科学院光电研究院 | Semiconductor laser side pump module |
| CN104466644A (en) * | 2014-12-12 | 2015-03-25 | 江苏中科四象激光科技有限公司 | High-power 885 nm laser diode side pump Nd:YAG laser module |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114361934A (en) * | 2022-01-07 | 2022-04-15 | 无锡亮源激光技术有限公司 | Novel high-power semiconductor laser device |
| CN114361934B (en) * | 2022-01-07 | 2024-02-13 | 无锡亮源激光技术有限公司 | Novel high-power semiconductor laser device |
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