CN110911954B - High repetition frequency temperature control-free semiconductor pump 1064nm disk laser - Google Patents

High repetition frequency temperature control-free semiconductor pump 1064nm disk laser Download PDF

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CN110911954B
CN110911954B CN201911249367.6A CN201911249367A CN110911954B CN 110911954 B CN110911954 B CN 110911954B CN 201911249367 A CN201911249367 A CN 201911249367A CN 110911954 B CN110911954 B CN 110911954B
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laser
coupling
pump source
tube
temperature
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CN110911954A (en
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王艳林
林毅
陈海波
汪立军
董玲莉
李延强
严江涛
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Hubei Huazhong Changjiang Photoelectric Technology Co ltd
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HUBEI HUAZHONG PHOTOELECTRIC SCIENCE AND TECHNOLOGY Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/164—Solid materials characterised by a crystal matrix garnet
    • H01S3/1643—YAG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1691—Solid materials characterised by additives / sensitisers / promoters as further dopants
    • H01S3/1698—Solid materials characterised by additives / sensitisers / promoters as further dopants rare earth

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Lasers (AREA)

Abstract

The invention provides a high repetition frequency temperature control-free semiconductor pump 1064nm disk laser. Compared with the existing similar equipment, the laser does not need any forced cooling measures, when in work, the pumping light generated by the LD tube is output into a laser resonant cavity formed by bonding a laser medium and a Q-switched crystal after passing through the coupling lens, and finally the pumping light is emitted by the protective lens to realize the output of pulse laser. The laser occupies a small space, provides stable and good 1064nm laser output performance, has the advantages of low power consumption, small beam divergence angle, simple and convenient debugging and the like, the output laser frequency is 1Hz-4KHz, the output laser energy is 40 muJ-100 muJ and can be adjusted, and the whole set of equipment can realize temperature-control-free and startup high-repetition-frequency work within the temperature range of-40 ℃ to 55 ℃.

Description

High repetition frequency temperature control-free semiconductor pump 1064nm disk laser
Technical Field
The invention relates to the technical field of solid lasers, in particular to a high repetition frequency temperature control-free semiconductor pump 1064nm disk laser.
Background
The solid laser has wide application in the technical fields of military and civilian, such as laser ranging, laser irradiation, imaging and the like, and the development direction of the solid laser is miniaturization, integration and lightweight. The existing 1064nm solid-state laser generally adopts a lamp pump light-gathering cavity or a semiconductor side pump structure of a temperature control system, and the solid-state laser has high output energy, but is often large in size and weight, so that the requirements of users on light weight and portability of equipment are difficult to meet. In addition, the laser frequency generated by the semiconductor side pump of the temperature control system is low (generally below 25 Hz), and the startup operation needs a long preparation time, which is difficult to meet the requirements of the user on quick tracking observation and startup, i.e. operation, of the moving target. More importantly, the conventional solid laser has poor heat dissipation effect, and the continuous working time of the equipment is short due to serious heat accumulation, so that a cooling or heat dissipation system (such as chinese patents CN201528122U and CN 207530300U) is often required to be additionally equipped, which undoubtedly increases the production cost and the manufacturing complexity of the equipment, and also has certain influence on the stability and the reliability of the system.
Disclosure of Invention
The invention aims to overcome the problems of the conventional solid-state laser and provide a semiconductor pump 1064nm disk laser which has high repetition frequency, is free of temperature control, is miniaturized, is light in weight and compact and can continuously work for a long time. The laser mainly comprises a body assembly 1, a coupling laser assembly 2, a pump source assembly 3 and an adjusting space ring 4, wherein the coupling laser assembly 2, the pump source assembly 3 and the adjusting space ring 4 are all fixed on the body assembly 1. A protective glass 1-2 is arranged on the body component 1; the coupling laser component 2 is provided with a laser medium 2-1, a Q-switched crystal 2-2 and a coupling lens 2-3, and the laser medium 2-1 and the Q-switched crystal 2-2 are bonded to form a laser resonant cavity; the pump source component 3 is provided with an LD pipe 3-1; after the laser is electrified, the LD tube 3-1 emits light, pump light sequentially passes through the coupling lens 2-3, the laser medium 2-1 and the Q-switching crystal 2-2 to form oscillation and stability in the laser resonant cavity, and finally is emitted by the protective lens 1-2 to realize pulse laser output.
Further, the adjusting spacer 4 is fixed between the body assembly 1 and the pump source assembly 3. Under the condition of certain pumping energy, the thickness of the spacing ring 4 can be trimmed and adjusted to conveniently adjust the output frequency and energy of the laser.
Further, a body 1-1 of the body component 1 is provided with a coaxial protective lens mounting hole 1-3, a coupling laser component mounting hole 1-4 and a pump source component mounting interface 1-5, which are respectively used for connecting and fixing the protective lens 1-2, the coupling laser component 2 and the pump source component 3.
Further, the coupling laser assembly 2 further comprises a coupling laser seat 2-4, a coupling space ring 2-5 and a pressing ring 2-6. The coupling laser seat 2-4 is arranged in a coupling laser component mounting hole 1-4, the laser medium 2-1, the Q-switched crystal 2-2 and the coupling lens 2-3 are arranged on the coupling laser seat 2-4, and the coupling space ring 2-5 is arranged between the two coupling lenses 2-3; the pressing ring 2-6 is also arranged on the coupling laser seat 2-4 and used for fastening the coupling lens 2-3.
Further, the pump source assembly 3 further comprises a pump source seat 3-2 and a temperature-sensitive resistor 3-3, the LD pipe 3-1 and the temperature-sensitive resistor 3-3 are both installed on the pump source seat 3-2, and the pump source seat 3-2 is fixedly connected with the pump source assembly installation interface 1-5. The LD tube is used for generating pump light and outputting the pump light to the laser medium through the coupling lens, and the temperature-sensitive resistor is used for collecting the temperature of the LD tube.
Furthermore, an LD tube electrode wiring hole 3-4 and a temperature-sensitive resistor mounting hole 3-5 are arranged on the end face of one side of the pump source seat 3-2, and a groove 3-6 for mounting and fixing the LD tube is arranged on the other side. And after a proper amount of heat conduction material is filled between the temperature-sensitive resistor 3-3 and the temperature-sensitive resistor mounting hole 3-5, the glue is filled and sealed, after the wiring of the LD tube electrode wiring hole 3-4, the glue is filled and sealed in the same way, and a proper amount of heat conduction material is filled between the LD tube 3-1 and the groove 3-6. The heat conduction material is indium foil or heat conduction silicone grease.
Further, the output wavelengths of the LD tube 3-1 are 802nm, 810nm and 813 nm; the thickness range of the laser medium 2-1 is 4.5mm-6mm, and the transmittance range of the cross section coating film is 40% -55%; the thickness range of the Q-switched crystal 2-2 is 1mm-2mm, and the transmittance range is 60% -80%.
Further, 2-1 of the laser medium is selected from Nd and YAG, wherein the mass ratio of Nd is 0.5wt% -1.5 wt%; the Q-switched crystal 2-2 is selected from Cr4+YAG crystal; the LD tube 3-1 is selected from multi-wavelength single tubes of T package, F package and C package, and particularly C package has the best effect on reducing volume. The selected Nd-YAG laser medium is beneficial to heat balance and stability while ensuring high absorption efficiency, thereby ensuring stable output of the laser. Selected Cr4+YAG Q-switched crystals have a large absorbable cross-section, thereby eliminating the need for a focusing system; in addition, Cr4+YAG crystal also performs very well in pulse width and power output and has high damage threshold, which is helpful to ensure laser output performance and reduce volume.
Furthermore, the laser frequency output by the laser is 1Hz-4KHz, the laser energy is 40 muJ-100 muJ and is adjustable, and more importantly, the excellent performance of temperature control free and working after starting up is realized in the temperature range of-40 ℃ to 55 ℃.
Compared with the existing solid laser of the same type, the laser resonant cavity provided by the invention has the advantages of convenient fine adjustment of structure, good anti-detuning stability and capability of achieving the purposes of miniaturization and light weight while giving consideration to stable laser output. The pump source component adopts a multi-wavelength packaging LD tube, can meet the requirement that the laser works when being started up within the range of-40 ℃ to 55 ℃, and the laser output frequency and the laser energy can be adjusted within a certain range. The inventor group also fully considers the drift of the output wavelength of the LD tube, the absorption and the heat effect of the length and the doping concentration of a laser medium on the wavelength of the LD tube, adjusts the influence of the thickness and the transmittance of the Q-switched crystal on the laser pulse width and the energy, and ensures that the emitted heat is low, the absorption efficiency is high and the heat balance is stable after the Q-switched crystal is optimally combined, so that the prepared laser meets the important index requirements of small volume, light weight, adjustable frequency and output energy, stable performance and the like under the conditions of temperature control free, high repetition frequency and reliable output. The laser occupies a small space on the premise of providing good 1064nm laser output performance, all the components are made of common metal materials, a special processing technology is not needed in manufacturing, the manufacturing cost is reduced, the production efficiency is improved, and the requirements of miniaturization and light weight of related lasers can be met.
Drawings
FIG. 1 is an overall cross-sectional view of a laser of the present invention;
FIG. 2 is a cross-sectional view of the body assembly;
FIG. 3 is a cross-sectional view of a coupled laser assembly;
FIG. 4 is a cross-sectional view of the pump source assembly;
FIG. 5 is a front view (A) and a cross-sectional view (B) of a coupled laser mount;
fig. 6 is a front view (a) and a sectional view (B) of the pump source holder.
The device comprises a body assembly 1, a coupling laser assembly 2, a pump source assembly 3 and an adjusting space ring 4; the device comprises a body 1-1, a protective glass 1-2, a protective glass mounting hole 1-3, a coupling laser assembly mounting hole 1-4 and a pump source assembly mounting interface 1-5; 2-1 parts of laser medium, 2-2 parts of Q-switched crystal, 2-3 parts of coupling lens, 2-4 parts of coupling laser seat, 2-5 parts of coupling space ring, 2-6 parts of pressing ring, 2-7 parts of mounting groove, 2-8 parts of guide cylinder, 2-9 parts of pressing ring mounting interface, 2-10 parts of coupling laser component mounting interface, 2-11 parts of coupling lens mounting hole and 2-12 parts of light-passing hole; the device comprises 3-1 parts of an LD (laser diode) tube, 3-2 parts of a pump source seat, 3-3 parts of a temperature-sensitive resistor, 3-4 parts of an electrode wiring hole of the LD tube, 3-5 parts of a temperature-sensitive resistor mounting hole, 3-6 parts of a groove, 3-7 parts of an anode mounting screw hole of the LD tube, 3-8 parts of a mounting interface of a pump source assembly and a body assembly and 3-9 parts of a mounting process hole of the pump source assembly.
Detailed Description
In order to make those skilled in the art fully understand the technical solutions and advantages of the present invention, the following embodiments are further described.
As shown in fig. 1-2, the high repetition frequency temperature-control-free semiconductor pump 1064nm disk laser mainly includes four major parts, i.e., a body assembly 1, a coupling laser assembly 2, a pump source assembly 3, and an adjusting spacer 4, each of which includes several components, which will be described in detail below.
The body assembly 1 is the main body of the complete set of equipment, to which other components are directly or indirectly fixed. A body 1-1 of the body component 1 is provided with a plurality of coaxial through holes or interfaces, including a protective lens mounting hole 1-3, a coupling laser component mounting hole 1-4 and a pump source component mounting interface 1-5, which are respectively used for fixedly mounting a protective lens 1-2, a coupling laser component 2 and a pump source component 3 and ensuring that the optical centers of the protective lens, the coupling laser component 2 and the pump source component 3 are on the same straight line. When assembling, firstly, the protective glass 1-2 is bonded in the protective glass mounting hole 1-3 of the body by optical epoxy glue; then fastening the coupling laser component 2 on the body 1-1 through the coupling laser component mounting hole 1-4, and fastening glue at the connecting thread; then the pump source component 3 is arranged in the pump source component mounting interface 1-5 and screwed tightly; the spacer 4 is then installed between the body assembly 1 and the pump source assembly 3. The adjustment of the laser output frequency and the energy is realized by trimming the thickness of the adjusting space ring 4, and under the condition of certain pumping energy, the thicker the adjusting space ring, the lower the laser output frequency and the lower the laser energy.
As shown in fig. 3 and 5, the coupled laser component 2 mainly comprises a laser medium 2-1, a Q-switched crystal 2-2, a coupling lens 2-3, a coupled laser seat 2-4, a coupling space ring 2-5 and a pressing ring 2-6. The coupling laser seat 2-4 is provided with a mounting groove 2-7 for a laser medium and a Q-switched crystal, a guide cylinder 2-8, a pressing ring mounting interface 2-9, a coupling laser component mounting interface 2-10, a coupling lens mounting hole 2-11 and a light through hole 2-12, wherein the coupling laser component mounting interface 2-10, the coupling lens mounting interface 2-11 and the light through hole 2-12 are coaxial with the guide cylinder 2-8. The laser medium 2-1 is also used as a laser reflector and is bonded with the Q-switched crystal 2-2 to form a laser resonant cavity, and the laser resonant cavity is bonded and fixed in the mounting groove 2-7 by using heat-conducting silicon rubber. The coupling lens 2-3 and the coupling space ring 2-5 are arranged in the coupling lens mounting hole 2-11 and are fastened by a pressing ring 2-6. The coupling lens 2-3 is mainly used for expanding and shaping light emitted by the LD tube 3-1, the number of the coupling lens is 2, and the coupling lens is connected and fixed with the LD tube 3-1 by a coupling space ring 2-5.
In order to ensure low heat dissipation, high absorption efficiency and stable heat balance, the laser medium 2-1 is Nd-YAG crystal with the thickness of 4.5-6 mm and the cross section coating transmittance of 40-55 percent, wherein the mass ratio of Nd is 0.5-1.5 percent; the corresponding Q-switched crystal 2-2 is determined as Cr with the thickness of 1mm-2mm and the transmittance of 60% -80%4+YAG crystal.
As shown in FIGS. 4 and 6, the pump source assembly 3 is composed of an LD tube 3-1, a pump source holder 3-2, and a temperature sensitive resistor 3-3. The LD tube 3-1 can adopt packaging forms such as T packaging, F packaging, C packaging and the like, the best effect is C packaging multi-wavelength single tube, and the output wavelengths are 802nm, 810nm and 813 nm. The LD tube is fixed on the pump source seat 3-2 through a copper screw, and the rear end of the pump source seat 3-2 is provided with an LD tube electrode wiring hole 3-4, a temperature-sensitive resistor mounting hole 3-5, a pump source assembly and body assembly mounting interface 3-8 and a pump source assembly mounting process hole 3-9; the front end of the pump source seat 3-2 is provided with an LD tube anode mounting screw hole 3-7, and two sides of the pump source seat are provided with grooves 3-6. The grooves 3-6 are used for installing and limiting the LD tube, and proper indium foil or heat-conducting silicone grease is filled between the grooves and the LD tube after installation. After the same temperature-sensitive resistor 3-3 and the temperature-sensitive resistor mounting hole 3-5 are fixed well, a proper amount of heat-conducting silicone grease is filled between the temperature-sensitive resistor 3-3 and the temperature-sensitive resistor mounting hole and glue is injected from the outside for bonding and fastening, so that the temperature-sensitive resistor is prevented from falling off from the mounting hole. After debugging is completed, all wiring holes are filled with glue for sealing.
The LD tube emits light after the laser power supply is electrified, light rays sequentially pass through the coupling lens 2-3, the laser medium 2-1 and the Q-switching crystal 2-2 and form oscillation in a resonant cavity formed by the laser medium and the Q-switching crystal, the laser is emitted by the protective lens 1-2 after stable oscillation, pulse laser output is realized, and the stable light emission of the whole laser only needs 3 s. Analysis and test show that the laser beam generated by the high-repetition-frequency temperature-control-free semiconductor pump 1064nm disk laser has excellent quality, the laser frequency is 1Hz-4KHz, the laser energy is 40 muJ-100 muJ and is adjustable, and the high-repetition-frequency operation without temperature control and startup can be realized even at the ambient temperature of-40 ℃ to 55 ℃.
The laser provided by the invention does not need any forced cooling measures, has the advantages of miniaturization (the overall dimension is only phi 20mm multiplied by 28mm, no similar products exist in the current market), light weight (the net weight of the laser is about 25g), compactness and stability, small occupied space of the whole equipment, stable and good output performance of the 1064nm laser, low power consumption, small beam divergence angle, simple and convenient debugging and the like, and is extremely excellent in reliability and sustainability (the laser can continuously work for 4 hours by using 1 section of 18650 batteries for power supply).

Claims (9)

1. A high repetition frequency temperature control-free semiconductor pump 1064nm disk laser is characterized by comprising a body component (1), a coupling laser component (2), a pump source component (3) and an adjusting space ring (4); the coupling laser assembly (2), the pump source assembly (3) and the adjusting space ring (4) are all fixed on the body assembly (1), the adjusting space ring (4) is fixed between the body assembly (1) and the pump source assembly (3), and the laser output frequency and the energy can be adjusted by changing the thickness of the adjusting space ring (4); a protective glass (1-2) is arranged on the body component (1); a laser medium (2-1), a Q-switched crystal (2-2) and a coupling lens (2-3) are arranged on the coupling laser component (2), wherein the laser medium (2-1) and the Q-switched crystal (2-2) are bonded to form a laser resonant cavity; an LD tube (3-1) is arranged on the pump source assembly (3), and the output wavelengths of the LD tube (3-1) are 802nm, 810nm and 813 nm; after the laser is electrified, the LD tube (3-1) emits light, pump light sequentially passes through the coupling lens (2-3), the laser medium (2-1) and the Q-switching crystal (2-2) and forms oscillation in the laser resonant cavity, and finally the oscillation is emitted by the protective lens (1-2) to realize pulse laser output.
2. The high repetition frequency temperature-control-free semiconductor pumped 1064nm disk laser as claimed in claim 1, wherein: the body (1-1) of the body component (1) is provided with a coaxial protective glass mounting hole (1-3), a coupling laser component mounting hole (1-4) and a pump source component mounting interface (1-5) which are respectively used for connecting and fixing the protective glass (1-2), the coupling laser component (2) and the pump source component (3).
3. The high repetition frequency temperature-control-free semiconductor pumped 1064nm disk laser as claimed in claim 1, wherein: the coupling laser component (2) further comprises a coupling laser seat (2-4), a coupling space ring (2-5) and a pressing ring (2-6); the coupling laser seat (2-4) is arranged in a coupling laser component mounting hole (1-4), the laser medium (2-1), the Q-switching crystal (2-2) and the coupling lens (2-3) are arranged on the coupling laser seat (2-4), and the coupling space ring (2-5) is arranged between the two coupling lenses (2-3); the pressing ring (2-6) is also arranged on the coupling laser seat (2-4) and used for fastening the coupling lens (2-3).
4. The high repetition frequency temperature-control-free semiconductor pumped 1064nm disk laser as claimed in claim 1, wherein: the pump source assembly (3) further comprises a pump source seat (3-2) and a temperature-sensitive resistor (3-3); the LD tube (3-1) and the temperature sensitive resistor (3-3) are both installed on the pump source seat (3-2), and the pump source seat (3-2) is fixedly connected with the pump source component installation interface (1-5).
5. The high repetition frequency temperature-control-free semiconductor pumped 1064nm disk laser as claimed in claim 4, wherein: an LD tube electrode wiring hole (3-4) and a temperature-sensitive resistor mounting hole (3-5) are arranged on one side of the pump source seat (3-2), and a groove (3-6) for mounting and fixing an LD tube is arranged on the other side of the pump source seat (3-2).
6. The high repetition frequency temperature-control-free semiconductor pumped 1064nm disk laser as claimed in claim 5, wherein: and a proper amount of heat conduction material is filled between the temperature-sensitive resistor (3-3) and the temperature-sensitive resistor mounting hole (3-5) and then is filled with glue for sealing, the LD tube electrode wiring hole (3-4) is also filled with glue for sealing after wiring, and a proper amount of heat conduction material is filled between the LD tube (3-1) and the groove (3-6), wherein the heat conduction material is indium foil or heat conduction silicone grease.
7. The high repetition frequency temperature-control-free semiconductor pumped 1064nm disk laser as claimed in claim 1, wherein: the thickness range of the laser medium (2-1) is 4.5mm-6mm, and the transmittance range of the cross section coating film is 40% -55%; the thickness range of the Q-switched crystal (2-2) is 1mm-2mm, and the transmittance range is 60% -80%.
8. The high repetition frequency temperature-control-free semiconductor pumped 1064nm disk laser as claimed in claim 4, wherein: the laser medium (2-1) is selected from Nd and YAG, wherein the mass ratio of Nd is 0.5-1.5 wt%; the Q-switched crystal (2-2) is selected from Cr4+YAG crystal; the LD tube (3-1) is a multi-wavelength single tube selected from T package, F package or C package.
9. The high repetition frequency temperature-control-free semiconductor pumped 1064nm disk laser as claimed in claim 1, wherein: the laser frequency output by the laser is 1Hz-4KHz, the laser energy is 40 muJ-100 muJ and is adjustable, and the applicable temperature range is-40 ℃ to 55 ℃.
CN201911249367.6A 2019-12-09 2019-12-09 High repetition frequency temperature control-free semiconductor pump 1064nm disk laser Active CN110911954B (en)

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CN101132108A (en) * 2007-08-28 2008-02-27 武汉凌云光电科技有限责任公司 Semiconductor pumping high repeated frequency solid state laser device
JP2009289894A (en) * 2008-05-28 2009-12-10 Toshiba Corp Laser oscillation device
CN102723659B (en) * 2012-05-02 2014-05-07 清华大学 Method for generation of long-span repetition frequency jumping Q-switched laser pulses
CN105470804A (en) * 2015-12-28 2016-04-06 中国电子科技集团公司第十一研究所 Diode pumped solid state laser (DPL) and debugging method therefor
CN108429125A (en) * 2018-02-08 2018-08-21 盐城工学院 A kind of intracavity pump acousto-optic Q modulation mixes holmium solid state laser
CN110535010B (en) * 2019-09-12 2020-11-10 北京空间机电研究所 Compact solid laser applied to laser ranging in space high-orbit environment

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