CN115967015A - Dual-wavelength multi-single-beam semiconductor laser beam combining device based on wavelength beam combining technology - Google Patents
Dual-wavelength multi-single-beam semiconductor laser beam combining device based on wavelength beam combining technology Download PDFInfo
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Abstract
The invention relates to the technical field of semiconductor laser, and discloses a dual-wavelength multi-single-beam semiconductor laser beam combining device based on a wavelength beam combining technology, which comprises a water cooling plate; the first step heat sink is arranged on the water cooling plate; the first beam combining module is arranged on the first stepped heat sink and used for emitting first laser wavelength; the second stepped heat sink is arranged on the water cooling plate; the second beam combining module is arranged on the second stepped heat sink and used for emitting second laser wavelength; the reflector is used for reflecting the first laser wavelength; the wavelength beam combining mirror is arranged in front of the reflecting mirror and used for reflecting the second laser wavelength and combining the first laser wavelength and the second laser wavelength; the focusing mirror is arranged on the water cooling plate and used for focusing the first laser wavelength and the second laser wavelength. The invention realizes double-wave high-power output by a single laser, has compact integral structure, is easy for heat management, and is suitable for the fields of laser processing and the like.
Description
Technical Field
The invention relates to the technical field of semiconductor laser, in particular to a dual-wavelength multi-single-beam semiconductor laser beam combining device based on a wavelength beam combining technology.
Background
In recent years, with the progress of technology, laser processing is more and more widely applied, and the multi-wavelength composite processing technology is rapidly developed. For example, in the welding process of metals such as copper, nickel and the like, blue light or green light and infrared light are compositely irradiated, the characteristic that the blue light and green light are absorbed by the metals such as copper, nickel and the like is high, the welding thickness is improved, and the method is applied to the fields of new energy battery sealing and welding and the like.
The current commonly used dual-wavelength compounding mode is to adopt two lasers with different wavelengths, and compound the two-wavelength lasers on the same focus by using a compound laser processing head to irradiate and process the material, and the equipment manufactured by the technology has larger size generally.
Improvements are needed.
Disclosure of Invention
The present invention provides a dual-wavelength multi-single-beam semiconductor laser beam combining device based on a wavelength beam combining technique, which mainly aims to solve the problems proposed in the background art by spatially combining a first beam combining module and a second beam combining module and converging multi-wavelength high-power laser to one point or coupling the laser into an optical fiber for transmission.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: many single bars of dual wavelength semiconductor laser beam combining device based on wavelength closes bundle technique includes: a water-cooling plate; the first stepped heat sink is mounted on the water cooling plate; the first beam combining module is arranged on the first stepped heat sink and is used for emitting a first laser wavelength; the second stepped heat sink is arranged on the water cooling plate and is arranged on one side of the first stepped heat sink; the second beam combining module is arranged on the second stepped heat sink and is used for emitting second laser wavelength; a mirror mounted between the first stepped heat sink and the second stepped heat sink, the mirror for reflecting a first laser wavelength; the wavelength beam combining mirror is arranged between the first stepped heat sink and the second stepped heat sink and is arranged in front of the reflecting mirror and used for reflecting the second laser wavelength and combining the first laser wavelength and the second laser wavelength; the focusing mirror is installed on the water cooling plate and used for focusing the first laser wavelength and the second laser wavelength.
Further, first beam combining module includes more than one first single bar semiconductor laser, with the first fast axis collimating mirror of first single bar semiconductor laser quantity adaptation, with the first beam conversion mirror of first single bar semiconductor laser quantity adaptation, with the first slow axis collimating mirror of first single bar semiconductor laser quantity adaptation and with the first speculum of first single bar semiconductor laser quantity adaptation, first single bar semiconductor laser installs on first step is heat sink, first fast axis collimating mirror installs the light-emitting window of first single bar semiconductor laser, first beam conversion mirror sets up first fast axis collimating mirror front side, first slow axis collimating mirror sets up the front side of first beam conversion mirror, first speculum setting is in the front side of first slow axis collimating mirror.
Furthermore, the first stepped heat sink is provided with steps adaptive to the number of the first single-bar semiconductor lasers.
Further, the first fast axis collimating mirror, the first beam conversion mirror and the first slow axis collimating mirror are plated with a first antireflection film, the first reflecting mirror is plated with a first reflecting film, and the first reflecting film is used for reflecting the first laser wavelength to the reflecting mirror.
Further, the reflecting mirror is plated with a reflecting film, and the reflecting film is used for transmitting the first laser wavelength to the wavelength beam combining mirror.
Further, the second beam combining module comprises more than one second Shan Ba semiconductor laser, a second fast axis collimating mirror in number suitable for the second Shan Ba semiconductor laser, a second beam conversion mirror in number suitable for the second Shan Ba semiconductor laser, a second slow axis collimating mirror in number suitable for the second Shan Ba semiconductor laser, and a second reflecting mirror in number suitable for the second Shan Ba semiconductor laser, the second Shan Ba semiconductor laser is mounted on the second stepped heat sink, the second fast axis collimating mirror is mounted at a light outlet of the second Shan Ba semiconductor laser, the second beam conversion mirror is disposed at the front side of the second fast axis collimating mirror, the second slow axis collimating mirror is disposed at the front side of the second beam conversion mirror, and the second reflecting mirror is disposed at the front side of the second slow axis collimating mirror.
Further, the second ladder heat sink is provided with ladders which are adaptive to the number of the second Shan Ba semiconductor lasers.
Further, a second antireflection film is plated on the second fast axis collimating mirror, the second beam conversion mirror and the second slow axis collimating mirror, a second reflection film is plated on the second reflecting mirror, and the second reflection film is used for reflecting second laser wavelength to the wavelength beam combining mirror.
Furthermore, a third reflection film for the second laser wavelength and a third antireflection film for the first laser wavelength are plated on the wavelength beam combiner.
Further, a fourth antireflection film for the first laser wavelength and the second laser slope length is plated on the focusing mirror.
Compared with the prior art, the invention has the beneficial effects that: the first beam combining module and the second beam combining module are combined through the reflecting mirror and the wavelength beam combining mirror, and are focused through the focusing mirror, so that the dual-wavelength high-power and light output can be realized on a single laser, the whole structure is more compact, the heat management is easy, and the laser beam combining device is more suitable for the fields of laser processing and the like.
Drawings
FIG. 1 is a schematic diagram of the present invention.
Fig. 2 is a schematic structural diagram of the first beam combining module.
Fig. 3 is a partially enlarged structural schematic diagram of the first beam combining module.
Fig. 4 is a schematic structural diagram of the second beam combining module.
Fig. 5 is a partially enlarged structural schematic diagram of the second beam combining module.
Fig. 6 is a schematic structural diagram of the present invention.
Reference numerals: 1. a water-cooling plate; 2. a first stepped heat sink; 3. a first beam combining module; 4. a second stepped heat sink; 5. a second beam combining module; 6. a mirror; 7. a wavelength beam combiner; 8. a focusing mirror; 9. a first single bar semiconductor laser; 10. a first fast axis collimating mirror; 11. a first beam conversion mirror; 12. a first slow axis collimator lens; 13. a first reflecting mirror; 14. a second Shan Ba semiconductor laser; 15. a second fast axis collimating mirror; 16. a second beam conversion mirror; 17. a second slow axis collimating mirror; 18. a second mirror.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
The embodiments described by referring to the drawings are exemplary and intended to be illustrative of the present application and are not to be construed as limiting the present application. In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and thus should not be considered limiting. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise. In this application, unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and encompass, for example, both fixed and removable connections or integral connections; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate. In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but through another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly above and obliquely above the second feature, or simply meaning that the first feature is at a lesser level than the second feature.
In view of the technical problems described in the background, as shown in fig. 1 to 6, there is provided a dual-wavelength multi-single-bar semiconductor laser beam combining device based on a wavelength beam combining technique, comprising: a water-cooling plate 1; the first stepped heat sink 2 is arranged on the water cooling plate 1, and the first stepped heat sink 2 is arranged on the water cooling plate 1; the first beam combining module 3 is installed on the first stepped heat sink 2, and the first beam combining module 3 is used for emitting a first laser wavelength; the second stepped heat sink 4 is arranged on the water cooling plate 1, and the second stepped heat sink 4 is arranged on one side of the first stepped heat sink 2; the second beam combining module 5 is installed on the second stepped heat sink 4, and the second beam combining module 5 is used for emitting a second laser wavelength; a mirror 6, the mirror 6 being mounted between the first stepped heat sink 2 and the second stepped heat sink 4, the mirror 6 being for reflecting a first laser wavelength; the wavelength beam combining mirror 7 is installed between the first stepped heat sink 2 and the second stepped heat sink 4, the wavelength beam combining mirror 7 is arranged in front of the reflecting mirror 6, and the wavelength beam combining mirror 7 is used for reflecting second laser wavelength and combining the first laser wavelength and the second laser wavelength; and the focusing mirror 8 is installed on the water cooling plate 1, and the focusing mirror 8 is used for focusing the first laser wavelength and the second laser wavelength.
The water cooling plate 1 is used by being connected with a water cooling system in use and used for carrying out heat management on a first beam combination module 3 and a second beam combination module 5, the first beam combination module 3 and the second beam combination module 5 can be respectively installed on a first stepped heat sink 2 and a second stepped heat sink 4 in a screw fixing mode, the heat sinks mainly play a heat dissipation role, a reflector 6 can be fixed on the first stepped heat sink 2 and the second stepped heat sink 4 through ultraviolet curing glue, a focusing lens 8 can be a single-chip focusing lens or a plurality of lenses to form a focusing lens group, and a first laser wavelength and a second laser wavelength are focused to one point or coupled to an optical fiber for transmission.
In practical use, a first laser wavelength is generated through the first beam combining module 3, the first laser wavelength is 915nm, the second beam combining module 5 generates a second laser wavelength, the second laser wavelength is 450nm, the generated first laser wavelength is reflected to the wavelength beam combining mirror 7 through the reflecting mirror 6, the second laser wavelength is transmitted to the wavelength beam combining mirror 7, so that beam combination of the first laser wavelength and the second laser wavelength is completed, and the combined laser is gathered through the focusing mirror 8 to have high power density. Through foretell project organization, can carry out dual wavelength and carry out high power and optical output on single laser instrument, its overall structure is more compact, easily thermal management, more is suitable for fields such as laser beam machining.
As shown in fig. 2-3, the first beam combining module 3 includes more than one first single bar semiconductor laser 9, a first fast axis collimating mirror 10 adapted to the number of the first single bar semiconductor laser 9, a first beam converter 11 adapted to the number of the first single bar semiconductor laser 9, a first slow axis collimating mirror 12 adapted to the number of the first single bar semiconductor laser 9, and a first reflector 13 adapted to the number of the first single bar semiconductor laser 9, where the first single bar semiconductor laser 9 is mounted on the first stepped heat sink 2, the first fast axis collimating mirror 10 is mounted at a light exit of the first single bar semiconductor laser 9, the first beam converter 11 is disposed in front of the first fast axis collimating mirror 10, the first slow axis collimating mirror 12 is disposed in front of the first beam converter 11, and the first reflector 13 is disposed in front of the first slow axis collimating mirror 12.
The first beam combining module 3 which can be used in the implementation is provided above, according to an actual use scenario, a group of the first single bar semiconductor laser 9, the first fast axis collimator 10, the first beam converter 11, the first slow axis collimator 12, and the first reflector 13 is formed, and when in use, a required number can be selected, in this embodiment, three groups are used, each group is linearly arranged, the first fast axis collimator 10 can be fixed in the first single bar semiconductor laser 9 through ultraviolet curing adhesive, the first beam converter 11 can be fixed in front of the first single bar semiconductor laser 9 through ultraviolet curing adhesive, the first slow axis collimator 12 can be fixed in front of the first beam converter 11 through ultraviolet curing adhesive, and the first reflector 13 can be fixed in front of the first slow axis collimator 12 through ultraviolet curing adhesive. The light emitting point of the first single bar semiconductor laser 9, the first fast axis collimating mirror 10, the first beam conversion mirror 11, the first slow axis collimating mirror 12 and the first reflector 13 are coaxial, namely the optical axis, wherein the reflector 13 and the optical axis form 45 degrees, the light emitted by the first single bar semiconductor laser 9 passes through the first fast axis collimating mirror 10, the first beam conversion mirror 11 and the first slow axis collimating mirror 12 to obtain collimated light beams, the collimated light beams pass through the first reflector 13 and then propagate in a 90-degree direction, and the combined beams of the n groups of light beams pass through the 90-degree direction and then are transmitted towards one direction.
In an implementation, the first stepped heat sink 2 is provided with steps 14 adapted to the number of the first single-bar semiconductor lasers 9. The first stepped heat sink 2 is of a stepped structure and is composed of n steps, and n groups of the first single-beam semiconductor laser 9, the first fast axis collimating mirror 10, the first beam conversion mirror 11, the first slow axis collimating mirror 12 and the first reflector 13 are arranged on each step of the first stepped heat sink 2.
The first fast axis collimator 10, the first beam converter 11 and the first slow axis collimator 12 are plated with a first antireflection film, the first reflector 13 is plated with a first reflective film, and the first reflective film is used for reflecting a first laser wavelength to the reflector 6.
The reflecting mirror 6 is coated with a reflecting film, and the reflecting film 6 is used for transmitting the first laser wavelength to the wavelength beam combining mirror 7.
When the laser is used, the vertical direction of light emitted by the first single-bar semiconductor laser 9 is the fast axis direction, and the horizontal direction is the slow axis direction. The light beam is collimated in the fast axis direction after passing through the first fast axis collimating mirror 10; then the light spot rotates 90 degrees along the optical axis direction through the first light beam conversion mirror 11, namely the fast axis direction is changed into the horizontal direction, and the slow axis direction is changed into the vertical direction; and further passes through the first slow axis collimating mirror 12, and then the slow axis direction is collimated.
After the light beams pass through the first fast axis collimating mirror 10, the first light beam conversion mirror 11 and the first slow axis collimating mirror 12, the fast axis and the slow axis are collimated, and the quality of the two light beams is homogenized.
And further passes through the first mirror 13 and then the propagation direction is 90 deg. turn. Due to the arrangement of the stepped structure, the size of each group of light beams in the vertical direction is less than 2mm,3 groups of light beams are not shielded by the first reflector 13 after being turned by 90 degrees, and the combined light beams are transmitted towards one direction.
Referring to fig. 4-5, the second beam combining module 5 includes more than one second Shan Ba semiconductor laser 14, a second fast axis collimating mirror 15 in number adapted to the second Shan Ba semiconductor laser 14, a second beam converting mirror 16 in number adapted to the second Shan Ba semiconductor laser 14, a second slow axis collimating mirror 17 in number adapted to the second Shan Ba semiconductor laser 14, and a second mirror 18 in number adapted to the second Shan Ba semiconductor laser 14, the second Shan Ba semiconductor laser 14 is mounted on the second stepped heat sink 4, the second fast axis collimating mirror 15 is mounted at the light exit of the second fast axis collimating mirror 14, the second beam converting mirror 16 is disposed at the front side of the second fast axis collimating mirror 15, the second slow axis collimating mirror 17 is disposed at the front side of the second slow axis collimating mirror Shan Ba semiconductor laser 14, and the second slow axis collimating mirror 17 is disposed at the front side of the second slow axis collimating mirror 17.
The structural arrangement and principle of the second beam combining module 5 can refer to the first beam combining module 3, and details of pairs are not repeated. The second beam combining module 5 is installed in the same manner as the first beam combining module 3, the direction of the second stepped heat sink 4 is opposite to that of the first beam combining module 1, and the transmission direction of the second laser wavelength after beam combining is also opposite to that of the first laser wavelength of the first beam combining module. The first stepped heat sink 2 of the first beam combining module 3 is tightly attached to the lowest stepped heat sink 4 of the second beam combining module 5, and the first stepped heat sink and the second stepped heat sink are staggered by a certain distance along the light emitting direction of laser. In the illustrated case, the light emitting directions of the single-beam semiconductor lasers of the first beam combining module 3 and the second beam combining module 5 are the same, and the second beam combining module 5 is staggered with the first beam combining module 3 by a certain distance along the light emitting direction.
The reflector 6 is fixed on the lowest steps of the first step heat sink 2 and the second step heat sink 4 through ultraviolet curing glue, the beam is combined with the first beam combining module 3 to form 45 degrees, the beam combined by the first beam combining module 3 is turned by 90 degrees after passing through the reflector 6, and the beam included angle is 90 degrees after being combined with the second beam combining module 5.
The second stepped heat sink 4 is provided with steps which are adaptive to the number of the second Shan Ba semiconductor lasers 14.
The second fast axis collimating mirror 15, the second beam conversion mirror 16 and the second slow axis collimating mirror 17 are coated with a second antireflection film, the second reflecting mirror 18 is coated with a second reflecting film, and the second reflecting film 18 is used for reflecting the second laser wavelength to the wavelength beam combining mirror 7.
And a third reflection film for the second laser wavelength and a third antireflection film for the first laser wavelength are plated on the wavelength beam combining mirror 7. The wavelength beam combining mirror 7 is a dichroic mirror, and is plated with a 45-degree third anti-reflection film for light emitted by the first beam combining module 3 and a 45-degree third reflection film for light emitted by the second beam combining module 5.
And a fourth antireflection film for the first laser wavelength and the second laser slope length is plated on the focusing mirror 8.
The technical scope of the present invention is not limited to the above embodiments, and any modifications, equivalent variations and modifications made to the above embodiments according to the technical spirit of the present invention still fall within the technical scope of the present invention.
Claims (10)
1. Many single bars of dual wavelength semiconductor laser beam device that closes based on wavelength closes a beam technique, its characterized in that includes:
a water-cooling plate;
the first stepped heat sink is mounted on the water cooling plate;
the first beam combining module is arranged on the first stepped heat sink and is used for emitting a first laser wavelength;
the second stepped heat sink is arranged on the water cooling plate and is arranged on one side of the first stepped heat sink;
the second beam combining module is arranged on the second stepped heat sink and is used for emitting second laser wavelength;
a mirror mounted between the first stepped heat sink and the second stepped heat sink, the mirror for reflecting a first laser wavelength;
the wavelength beam combining mirror is arranged between the first stepped heat sink and the second stepped heat sink and is arranged in front of the reflecting mirror and used for reflecting the second laser wavelength and combining the first laser wavelength and the second laser wavelength;
and the focusing mirror is installed on the water cooling plate and is used for focusing the first laser wavelength and the second laser wavelength.
2. The wavelength-combining-technology-based dual-wavelength multi-single-bar semiconductor laser beam combining device according to claim 1, wherein: first beam combining module include more than one first single bar semiconductor laser, with the first fast axle collimating mirror of first single bar semiconductor laser quantity adaptation, with the first beam conversion mirror of first single bar semiconductor laser quantity adaptation, with the first slow axle collimating mirror of first single bar semiconductor laser quantity adaptation and with the first speculum of first single bar semiconductor laser quantity adaptation, first single bar semiconductor laser installs on first step is heat sink, first fast axle collimating mirror is installed the light-emitting window of first single bar semiconductor laser, first beam conversion mirror sets up first fast axle collimating mirror front side, first slow axle collimating mirror sets up the front side of first beam conversion mirror, first speculum setting is in the front side of first slow axle collimating mirror.
3. The wavelength-combining-technology-based dual-wavelength multi-single-bar semiconductor laser beam combining device according to claim 2, wherein: the first stepped heat sink is provided with steps matched with the number of the first single-bar semiconductor lasers.
4. The wavelength-combining-technology-based dual-wavelength multi-single-bar semiconductor laser beam combining device according to claim 2, wherein: the first fast axis collimating mirror, the first beam conversion mirror and the first slow axis collimating mirror are plated with first antireflection films, the first reflecting mirror is plated with a first reflecting film, and the first reflecting film is used for reflecting first laser wavelength to the reflecting mirror.
5. The wavelength-combining-technology-based dual-wavelength multi-single-beam semiconductor laser beam combining device according to claim 4, wherein: the reflecting mirror is plated with a reflecting film, and the reflecting film is used for transmitting the first laser wavelength to the wavelength beam combining mirror.
6. The wavelength-combining-technology-based dual-wavelength multi-single-bar semiconductor laser beam combining device according to claim 5, wherein: the second beam combining module comprises more than one second Shan Ba semiconductor laser, second fast axis collimating mirrors adaptive to the number of the second Shan Ba semiconductor lasers, second beam conversion mirrors adaptive to the number of the second Shan Ba semiconductor lasers, second slow axis collimating mirrors adaptive to the number of the second Shan Ba semiconductor lasers and second reflecting mirrors adaptive to the number of the second Shan Ba semiconductor lasers, the second Shan Ba semiconductor lasers are installed on the second stepped heat sink, the second fast axis collimating mirrors are installed at light outlet ports of the second Shan Ba semiconductor lasers, the second beam conversion mirror is arranged on the front side of the second fast axis collimating mirror, the second slow axis collimating mirror is arranged on the front side of the second beam conversion mirror, and the second slow axis collimating mirror is arranged on the front side of the second slow axis collimating mirror.
7. The wavelength-combining-technology-based dual-wavelength multi-single-beam semiconductor laser beam combining device according to claim 6, wherein: the second ladder heat sink is provided with ladders which are matched with the second Shan Ba semiconductor lasers in number.
8. The wavelength-combining-technology-based dual-wavelength multi-single-bar semiconductor laser beam combining device according to claim 7, wherein: and the second fast axis collimating mirror, the second beam conversion mirror and the second slow axis collimating mirror are plated with second antireflection films, the second reflecting mirror is plated with a second reflecting film, and the second reflecting film is used for reflecting second laser wavelength to the wavelength beam combining mirror.
9. The wavelength-combining-technology-based dual-wavelength multi-single-bar semiconductor laser beam combining device according to claim 8, wherein: and a third reflection film for the second laser wavelength and a third antireflection film for the first laser wavelength are plated on the wavelength beam combiner.
10. The wavelength-combining-technology-based dual-wavelength multi-single-beam semiconductor laser beam combining device according to claim 9, wherein: and a fourth antireflection film for the first laser wavelength and the second laser slope length is plated on the focusing mirror.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116826500A (en) * | 2023-04-24 | 2023-09-29 | 广东光机高科技有限责任公司 | Dual-wavelength output laser for marking aerial cable |
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