CN101833150A - Fiber coupling module of high-power semiconductor laser - Google Patents
Fiber coupling module of high-power semiconductor laser Download PDFInfo
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- CN101833150A CN101833150A CN 201010174581 CN201010174581A CN101833150A CN 101833150 A CN101833150 A CN 101833150A CN 201010174581 CN201010174581 CN 201010174581 CN 201010174581 A CN201010174581 A CN 201010174581A CN 101833150 A CN101833150 A CN 101833150A
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Abstract
The invention relates to a fiber coupling module of a high-power semiconductor laser, which comprises a plurality of single-tube semiconductor lasers with the same wavelength in the same polarization state, beam collimation lenses, a glass flat plate, reflecting prisms and a focusing device, wherein expect one path of the single-tube semiconductor lasers, the other single-tube semiconductor lasers are all parallel to an axis x and arrayed in a ladder shape; the beam collimation lenses are arranged in front of each single-tube semiconductor laser, and the light emitted by each single-tube laser passes through a beam collimation lens and then passes through a reflecting prism; each reflecting prism keeps consistent with a single-tube laser corresponding to the reflecting prism on the horizontal height; the light emitted by the plurality of single-tube lasers is transmitted to the focusing device through reflecting; and beams emitted by the single-tube lasers arranged in the direction of an axis z is directly transmitted to the focusing device through gaps among the plurality of the reflecting prisms and then combined with other beams to focus together and then enter a fiber. In the invention, the distances of the welding positions of each single-tube laser become longer, and the high-power semiconductor laser fiber coupling module has easy welding, convenient debugging, good heat radiating effect and high coupling efficiency.
Description
Technical field
The present invention relates to semiconductor laser fiber coupling technique field, relate in particular to a kind of fiber coupling module of high-power semiconductor laser.
Background technology
Volume is little, in light weight, efficient is high because semiconductor laser (LD) has, and therefore advantages such as life-span length, spectrum line width have a wide range of applications at aspects such as medical treatment, pumping, monitoring, processing.In recent years, along with the development of semiconductor laser technology, when improving semiconductor laser output power and brightness requirement, also its stability and life-span there has been higher requirement.Great majority are used the fiber coupling module that all adopts LD linear array or folded formation formula in the world, because the heat that produces in the middle of each luminous point in the bar bar can not be lost fully, cause its life-span lower.Close intrafascicularly at single tube, each single tube laser instrument is an independently luminous point, and the influence of the series connection of not being heated has good heat radiation, and the life-span is stable.
Fig. 1 is that prior art adopts the single tube array to close the synoptic diagram of the fiber coupling module of bundle, this is that existing in the world at present single tube closes one of bundle technology (High Brightness, Fiber Coupled SingleEmitter Arrays Stefan, Heinemann, Boris Regaard, Torsten Schmidt, BenLewis, Proc.of SPIE Vol.7198 71980Q-1).As shown in Figure 1, this device is a plurality of single tube semiconductor lasers closely to be welded on by signal among the figure form single tube laser array 15 on one stair-stepping heat sink 17, the laser instrument front of each layer collimates through a collimator lens array 16, be transferred to focus device then, focus on and enter optical fiber.The complex process of this method requirement laser instrument welding, the welding precision height, each laser instrument is strict parallel, is difficult to guarantee on welding technology, and because each single tube laser instrument is very near from getting, can influences the heat radiation of single tube laser instrument, causes the life-span to be reduced.
Summary of the invention
The purpose of this invention is to provide a kind of fiber coupling module of high-power semiconductor laser, its welding is simple and easy, and debugging is convenient, and thermal diffusivity is good, and the life-span is long, the coupling efficiency height.
To achieve these goals, technical scheme of the present invention is as follows:
A kind of fiber coupling module of high-power semiconductor laser, comprise that several are heat sink, several single tube semiconductor lasers, several light beam collimation lens and focus device, heat sink, single tube semiconductor laser and light beam collimation lens three are corresponding one by one to place, the single tube semiconductor laser be welded on heat sink on, light beam collimation lens is arranged on the exit end of single tube semiconductor laser, it is characterized in that, in the light path of this module, be placed with glass plate, lay several reflecting prisms above it, several single tube semiconductor lasers are all stepped arrangement except that the second single tube semiconductor laser, the single tube semiconductor laser of each single tube semiconductor laser and its right opposite is positioned at same level height, and the single tube semiconductor laser adjacent with its left and right sides differs spacing on level height be d; Reflecting prism and single tube semiconductor laser are corresponding one by one to be placed, and reflecting prism and its corresponding single tube semiconductor laser are positioned at same level height; The second single tube semiconductor laser is placed perpendicular to the single tube semiconductor laser, and the light beam of its outgoing directly transfers to focus device by the gap in the middle of each reflecting prism; Focus device is parallel to the single tube semiconductor laser and places.
The invention has the beneficial effects as follows: the light that its corresponding single tube semiconductor laser sends is reflected by using reflecting prism, the transmission that is parallel to each other of light beam after the reflection, be arranged in thick and fast together, need not again the single tube semiconductor laser to be welded into the form of array, can make each laser instrument that more sufficient welding position and heat-dissipating space are arranged like this, make the welding transfiguration easy, debug more convenient, thermal diffusivity is better, and the life-span prolongs; By the suitable arrangement of reflecting prism and single tube semiconductor laser, can make the light beam that reflects back be arranged in subcircular, can make focal beam spot rounded after focusing on like this, more meet the distribution of fiber end face shape, can improve coupling efficiency.
Description of drawings
Fig. 1 is the device synoptic diagram of prior art with the high power semiconductor lasers of the coupling output of single tube array and microlens array realization.
Fig. 2 is the structural representation of fiber coupling module of high-power semiconductor laser of the present invention.
Fig. 3 is the multichannel single tube semiconductor laser position height synoptic diagram shown in Fig. 2.
To be the light beam that sends of multichannel single tube semiconductor laser of the present invention close hot spot synoptic diagram behind the bundle through reflection to Fig. 4.
Among the figure: 1, heat sink, 2, single tube semiconductor laser, 3, light beam collimation lens, 4, glass plate, 5, first reflecting prism, 6, second reflecting prism, the 7, the 3rd reflecting prism, 8, fast axle focuses on cylindrical mirror, 9, slow axis focuses on cylindrical mirror, 10, the second single tube semiconductor laser, 11, heat sink, 12, space, 13, the hot spot of single tube semiconductor laser, the hot spot of 14, the second single tube semiconductor laser, 15, the single tube laser array, 16, collimator lens array, 17, stepped heat sink.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is done description in further detail:
As shown in Figure 1, fiber coupling module of high-power semiconductor laser of the present invention comprises: a plurality of single tube semiconductor lasers 2,10 of the identical polarization state of same wavelength, a plurality of light beam collimation lens 3, glass plate 4, a plurality of reflecting prisms are (as first reflecting prism 5, second reflecting prism 6, the 3rd reflecting prism 7 etc., these reflecting prisms all are identical prisms, and just the position discharging is different), fast axle focuses on cylindrical mirror 8 and slow axis focuses on cylindrical mirror 9.With regard to one group of light path wherein, single tube semiconductor laser 2 is welded on the ceramic heat sink 1, exit end at single tube semiconductor laser 2 is provided with a light beam collimation lens 3, the light beam that single tube semiconductor laser 2 sends by light beam collimation lens 3 to reduce its fast and slow axis angle of divergence, then, be transferred to second reflecting prism 6, transfer to after the transmission direction of light beam has been changed 90 ° by fast axle focusing cylindrical mirror 8 and slow axis and focus on the focus device that cylindrical mirror 9 is formed.A plurality of and single tube semiconductor laser 2 identical single tube semiconductor lasers are placed on stair-stepping heat sink 11 (see figure 2), its light that sends transfers to focus device through reflection, wherein, the second single tube semiconductor laser 10 is placed in the z direction of principal axis, its light beam that sends directly transfers to focus device by the space 12 in the middle of a plurality of reflecting prisms, close with other light beam and to restraint into a branch of light, focus at last and enter optical fiber.
The fast axle that above-mentioned focus device is set gradually by coupling back, edge beam Propagation direction focuses on cylindrical mirror 8 and slow axis focusing cylindrical mirror 9 is formed, and fast axle focuses on cylindrical mirror 8 and slow axis focuses on the lens combination that cylindrical mirror 9 also can use sphere cylindricality focus lamp or aspheric surface circle focus lamp or anaberration.For semiconductor laser, stipulate that generally perpendicular to P-n junction plane direction be quick shaft direction, being parallel to P-n junction plane direction is slow-axis direction, and the z direction of principal axis is the slow-axis direction of single tube semiconductor laser 2 as shown in Figure 1, is its quick shaft direction perpendicular to the direction of paper; After light beam closed bundle through reflection, the x axle was the slow-axis direction of single tube semiconductor laser 2, is its quick shaft direction perpendicular to the direction of paper.
Above-mentioned light beam collimation lens 3 adopts spherical lens or non-spherical lens that light beam is collimated, and perhaps adopts the aspheric surface cylindrical mirror of two separation respectively the fast and slow axis light beam to be collimated.
As shown in Figure 2, each single tube semiconductor laser 2 is placed in same level height with the single tube laser instrument that place on its opposite, and the single tube laser instrument adjacent with its left and right sides differs in the level height spacing and be d, stepped arrangement.The second single tube semiconductor laser 10 is placed along the z axle, and its light beam that sends passes through direct space 12 in the middle of a plurality of reflecting prisms, light beam collimation lens 3 backs along the transmission of z axle, closes bundle with other reflected beams.The rounded distribution of focal beam spot can be made like this, coupling efficiency can be improved.Space 12 can by processing reflecting prism firm banking the time reserve in advance.
Primary Component of the present invention is a plurality of reflecting prisms that are fixed on the glass plate 4, each reflecting prism and the corresponding one by one placement of single tube semiconductor laser of placing along the x axle, for example, the light that single tube semiconductor laser 2 sends is through 6 reflections of second reflecting prism, its transmission direction half-twist.Each reflecting prism all is a Tp, is coated with anti-reflection film on two logical light faces.Each reflecting prism and its two-layer reflecting prism height in the horizontal direction up and down differ and are d, and for example, second reflecting prism 6 and first reflecting prism 5, the 3rd reflecting prism 7 differ apart from d stepped arrangement respectively in level height; So just can make that each reflecting prism is corresponding with it to be placed in stepped single tube semiconductor laser on heat sink and to be consistent on level height.The fixing of reflecting prism height can realize that glass block does not draw in the drawings by the glass block that adds different-thickness in the middle of reflecting prism and glass plate.The light beam that each single tube semiconductor laser 2 of placing along the x direction of principal axis sends all transmits along the z direction of principal axis after reflecting through reflecting prism.Along the second single tube semiconductor laser 10 that the Z axle is placed, its light beam that sends passes through direct space 12 in the middle of a plurality of reflecting prisms, light beam collimation lens 3 backs also along the transmission of z axle, closes bundle with other reflected beams.
As shown in Figure 4, it closes light spot shape behind the bundle for light beam, number in the figure 13 is to be transferred to focus device-fast axle behind single tube laser instrument 2 process light beam collimation lens, the reflecting prism to focus on the hot spot that cylindrical mirror 8 forms previously, after number in the figure 14 is the second single tube semiconductor laser, 10 process light beam collimation lens, directly be transferred to the hot spot that focus device-fast axle focusing cylindrical mirror 8 forms previously from the middle space 12 that forms of a plurality of reflecting prisms.To the reflection of light transmission that multichannel single tube semiconductor laser sends, can make the light beam that reflects back be arranged in subcircular by reflecting prism, can make focal beam spot more meet the distribution of fiber end face shape after focusing on like this, can improve its coupling efficiency.
Claims (6)
1. fiber coupling module of high-power semiconductor laser, comprise several heat sink (1), several single tube semiconductor lasers (2), several light beam collimation lens (3) and focus device, heat sink (1), single tube semiconductor laser (2) and light beam collimation lens (3) three are corresponding one by one to place, single tube semiconductor laser (2) is welded on heat sink (1), light beam collimation lens (3) is arranged on the exit end of single tube semiconductor laser (2), it is characterized in that, in the light path of this module, be placed with glass plate (4), lay several reflecting prisms above it, the stepped arrangement except that the second single tube semiconductor laser (10) of several single tube semiconductor lasers (2), each single tube semiconductor laser (2) is positioned at same level height with the single tube semiconductor laser of its right opposite, and the single tube semiconductor laser adjacent with its left and right sides differs spacing on level height be d; Reflecting prism and single tube semiconductor laser (2) are corresponding one by one to be placed, and reflecting prism and its corresponding single tube semiconductor laser (2) are positioned at same level height; The second single tube semiconductor laser (10) is placed perpendicular to single tube semiconductor laser (2), and the light beam of its outgoing directly transfers to focus device by the gap in the middle of each reflecting prism; Focus device is parallel to single tube semiconductor laser (2) and places.
2. fiber coupling module of high-power semiconductor laser as claimed in claim 1, it is characterized in that, transmission is parallel to each other behind the reflecting prism of the light beam that described several single tube semiconductor lasers (2) send through the diverse location arrangement, make the light beam dense arrangement form subcircular, through the rounded distribution of hot spot that forms behind the focus device.
3. fiber coupling module of high-power semiconductor laser as claimed in claim 1 is characterized in that, described single tube semiconductor laser (2) is the single tube semiconductor laser of the identical polarization state of same wavelength with the second single tube semiconductor laser (10).
4. fiber coupling module of high-power semiconductor laser as claimed in claim 1, it is characterized in that, described light beam collimation lens (3) adopts spherical lens or non-spherical lens that light beam is collimated, and perhaps adopts the aspheric surface cylindrical mirror of two separation respectively the fast and slow axis light beam of single tube semiconductor laser to be collimated.
5. fiber coupling module of high-power semiconductor laser as claimed in claim 1 is characterized in that, described focus device focuses on cylindrical mirror (9) by fast axle focusing cylindrical mirror (8) that sets gradually along coupling back beam Propagation direction and slow axis and forms.
6. fiber coupling module of high-power semiconductor laser as claimed in claim 5, it is characterized in that described fast axle focuses on cylindrical mirror (8) and slow axis focusing cylindrical mirror (9) all adopts sphere cylindrical focusing mirror or circular focus lamp of aspheric surface or anaberration lens combination.
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| CN2010101745812A CN101833150B (en) | 2010-05-18 | 2010-05-18 | Fiber coupling module of high-power semiconductor laser |
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| CN2010101745812A CN101833150B (en) | 2010-05-18 | 2010-05-18 | Fiber coupling module of high-power semiconductor laser |
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| CN101833150B CN101833150B (en) | 2011-06-29 |
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| CN2010101745812A Expired - Fee Related CN101833150B (en) | 2010-05-18 | 2010-05-18 | Fiber coupling module of high-power semiconductor laser |
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| CN102255238A (en) * | 2010-09-17 | 2011-11-23 | 武汉高晟知光科技有限公司 | Packaging structure of semiconductor laser device and application device thereof |
| CN102401949A (en) * | 2011-12-02 | 2012-04-04 | 北京工业大学 | Optical fiber coupling module of platform-type turning and reflecting single-tube semiconductor laser |
| CN102468602A (en) * | 2010-11-17 | 2012-05-23 | 北京中视中科光电技术有限公司 | Semiconductor laser source |
| CN102590962A (en) * | 2012-02-22 | 2012-07-18 | 中国科学院半导体研究所 | Multiple unit semiconductor laser and optical fiber coupling system |
| CN102904161A (en) * | 2012-09-27 | 2013-01-30 | 夏云 | High-power integrated laser light source |
| CN103913410A (en) * | 2014-04-09 | 2014-07-09 | 江西科技师范大学 | Novel multi-laser flow cytometry laser integration system |
| CN104614815A (en) * | 2014-12-11 | 2015-05-13 | 北京工业大学 | Fiber coupling type optical module of multi-single-tube semiconductor laser |
| CN104849843A (en) * | 2014-02-14 | 2015-08-19 | 三菱电机株式会社 | Laser beam-combining optical device |
| CN104868363A (en) * | 2015-05-28 | 2015-08-26 | 北京工业大学 | Single-tube semiconductor laser and fiber coupling system |
| CN104956555A (en) * | 2013-03-13 | 2015-09-30 | 优志旺电机株式会社 | Semiconductor laser device |
| CN105207054A (en) * | 2015-10-14 | 2015-12-30 | 苏州大学 | Novel multi-monotube semiconductor laser unit optical fiber coupling module |
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| CN101000444A (en) * | 2007-01-05 | 2007-07-18 | 北京工业大学 | Device for implementing shaping high power caser diode pile light beam |
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| CN102255238A (en) * | 2010-09-17 | 2011-11-23 | 武汉高晟知光科技有限公司 | Packaging structure of semiconductor laser device and application device thereof |
| CN102255238B (en) * | 2010-09-17 | 2013-03-20 | 武汉高晟知光科技有限公司 | Packaging structure of semiconductor laser device and application device thereof |
| CN102468602A (en) * | 2010-11-17 | 2012-05-23 | 北京中视中科光电技术有限公司 | Semiconductor laser source |
| CN102401949A (en) * | 2011-12-02 | 2012-04-04 | 北京工业大学 | Optical fiber coupling module of platform-type turning and reflecting single-tube semiconductor laser |
| CN102590962A (en) * | 2012-02-22 | 2012-07-18 | 中国科学院半导体研究所 | Multiple unit semiconductor laser and optical fiber coupling system |
| CN102904161A (en) * | 2012-09-27 | 2013-01-30 | 夏云 | High-power integrated laser light source |
| CN102904161B (en) * | 2012-09-27 | 2014-08-13 | 夏云 | High-power integrated laser light source |
| CN104956555B (en) * | 2013-03-13 | 2017-12-26 | 优志旺电机株式会社 | Semiconductor laser apparatus |
| CN104956555A (en) * | 2013-03-13 | 2015-09-30 | 优志旺电机株式会社 | Semiconductor laser device |
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| US10014664B2 (en) | 2013-04-09 | 2018-07-03 | Nlight, Inc. | Flared laser oscillator waveguide |
| US9553424B2 (en) | 2013-04-09 | 2017-01-24 | Nlight, Inc. | Flared laser oscillator waveguide |
| CN104849843A (en) * | 2014-02-14 | 2015-08-19 | 三菱电机株式会社 | Laser beam-combining optical device |
| CN103913410A (en) * | 2014-04-09 | 2014-07-09 | 江西科技师范大学 | Novel multi-laser flow cytometry laser integration system |
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| CN104614815A (en) * | 2014-12-11 | 2015-05-13 | 北京工业大学 | Fiber coupling type optical module of multi-single-tube semiconductor laser |
| CN104868363B (en) * | 2015-05-28 | 2018-10-26 | 北京工业大学 | A kind of single tube semiconductor laser optical fiber coupled system |
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| US10270224B2 (en) | 2015-06-04 | 2019-04-23 | Nlight, Inc. | Angled DBR-grating laser/amplifier with one or more mode-hopping regions |
| CN105207054B (en) * | 2015-10-14 | 2018-01-02 | 苏州大学 | More single-tube semiconductor laser fiber coupling modules |
| CN105207054A (en) * | 2015-10-14 | 2015-12-30 | 苏州大学 | Novel multi-monotube semiconductor laser unit optical fiber coupling module |
| CN105676378B (en) * | 2016-03-28 | 2018-02-09 | 北京工业大学 | A kind of fiber coupling system |
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| CN106785895A (en) * | 2016-11-30 | 2017-05-31 | 中国科学院半导体研究所 | A kind of device that beam is closed based on photon crystal laser |
| CN110471144A (en) * | 2019-08-07 | 2019-11-19 | 北京工业大学 | A kind of myriawatt grade optical fiber connector of anaberration |
| CN113204158A (en) * | 2020-02-03 | 2021-08-03 | 中强光电股份有限公司 | Light source module and projection device |
| US11531258B2 (en) | 2020-02-03 | 2022-12-20 | Coretronic Corporation | Light source module and projection device |
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| CN112952549A (en) * | 2021-03-17 | 2021-06-11 | 深圳市星汉激光科技股份有限公司 | Semiconductor laser coupling system |
| CN113898883A (en) * | 2021-10-20 | 2022-01-07 | 江苏亮点光电研究有限公司 | Laser lighting device |
| CN114006269A (en) * | 2021-12-29 | 2022-02-01 | 深圳市星汉激光科技股份有限公司 | Direct output system of high-power semiconductor laser and polarization beam combining structure thereof |
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