CN101144909A - Surface array semiconductor laser light beam shaping device - Google Patents
Surface array semiconductor laser light beam shaping device Download PDFInfo
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- CN101144909A CN101144909A CNA2007100562189A CN200710056218A CN101144909A CN 101144909 A CN101144909 A CN 101144909A CN A2007100562189 A CNA2007100562189 A CN A2007100562189A CN 200710056218 A CN200710056218 A CN 200710056218A CN 101144909 A CN101144909 A CN 101144909A
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Abstract
The present invention relates to a beam reshaping device for a plane array semiconductor laser. The device includes a fast axis collimating lens, a slow axis collimating lens, a ladder lens, a first parallelepiped prism unit, and a second parallelepiped prism unit. The beam emitted by the plane array semiconductor laser passes through the fast axis collimating lens and the slow axis collimating lens, and lowers the divergence angle of the fast axis and the divergence angle of the slow axis. The irradiance interspace between bars can be eliminated by the ladder lens and can be compressed in the direction of the fast axis. Finally, part of beam can be moved parallel along the fast axis direction by the first parallelepiped prism unit and the second parallelepiped prism unit, and then be moved along the slow axis direction. Through the above process, the beam is realigned, and the purpose that the quality of the fast axis beam and the quality of the slow axis beam tend to be coincident is reached. The realigned beam can get high-power high-brightness facula after being focused. The optical apparatus used in the present invention is easy to be produced and convenient to be adjusted with simple structure.
Description
Technical field
The present invention relates to a kind of light-beam forming unit of high-power surface array semiconductor laser.
Background technology
With respect to the laser instrument of other type, semiconductor laser (LD) has that volume is little, in light weight, efficient is high, the life-span is long, direct advantage such as current-modulation, therefore used widely in every field such as industry, medical treatment, military affairs, communications.But semiconductor laser also has its inherent defective, be about 1 μ m perpendicular to the last active layer size of p-n junction in-plane (quick shaft direction), 30 °-60 ° of beam divergence angles, be about 100～200 μ m in the size that is parallel to the last active layer of p-n junction in-plane (slow-axis direction), angle of divergence 6-10 °, asymmetric its beam quality that makes of the fast and slow axis beam waist and the angle of divergence differs greatly, output beam also has serious astigmatism, and (beam waist position on fast axle and the slow-axis direction is not at same position, the general 40 μ m that surpass of distance), this is unfavorable for that all light beam focusing obtains small light spot.Weigh beam quality, with light beam parameter long-pending (BPP), it is defined as the beam waist diameter ω of laser beam usually for we
0(generally adopting the approximate value of the active layer size of semiconductor laser device) and angle of divergence θ (FW1/e as beam waist diameter
2) product, its unit is mm*mrad.
Materials processings such as Metal Cutting, welding, punching require laser to have high power high luminance.A plurality of LD are integrated into linearly aligned LD Bar and further LD Bar are piled up obtain two-dimensional array (LD Stack) in order to improve output power.Because single tube semiconductor laser fast and slow axis beam quality differs greatly, thereby also there is the problem that beam quality is poor, be difficult to obtain the high brightness small light spot in the light beam of two-dimensional array output.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of light beam rearrangement with two-dimensional array semiconductor laser output, improving beam quality, thereby obtains the light-beam forming unit of the surface array semiconductor laser of high brightness small light spot by focusing.
In order to solve the problems of the technologies described above, the light-beam forming unit of surface array semiconductor laser of the present invention comprises the fast axis collimation mirror, slow axis collimating mirror, ladder lens, the first parallelepipedon prism group, the second parallelepipedon prism group; Described fast axis collimation mirror and slow axis collimating mirror are placed on the light beam output terminal of surface array semiconductor laser, are respectively applied for to reduce the fast axle angle of divergence and the slow axis angle of divergence; Ladder lens is placed on the light path of light beam, is used to remove the luminous space between the bar bar, and makes light beam obtain compression at quick shaft direction; The first parallelepipedon prism group is placed on the reflected light path of ladder lens, is used to make segment beam along the quick shaft direction translation; The second parallelepipedon prism group is placed on the emitting light path of the first parallelepipedon prism group, is used to make light beam after the quick shaft direction translation again along the slow-axis direction translation.
Described fast axis collimation mirror adopts post lens, attached column lens or gradual index lens.
Described slow axis collimating mirror adopts the microtrabeculae lens arra.
The angle that described ladder lens constitutes between two faces of each step is 135 °, and wherein reflecting surface and angle of beams are 45 °.
The described first parallelepipedon prism group is made of at least one parallelepipedon prism.
The described second parallelepipedon prism group is made of at least one parallelepipedon prism.
Two prisms are arranged on the described parallelepipedon prism; Angle between two bottom surfaces and two prisms is 45 °, with other two lateral vertical; The ladder lens beam reflected is by a bottom surface vertical incidence of parallelepipedon prism, through the reflection of two prisms, again by after the vertical outgoing in another bottom surface, translation one segment distance.By changing the placement direction of two prisms of parallelepipedon prism, can make segment beam along fast axle or slow-axis direction translation, reach the purpose that light beam rearranges.
The present invention at first adopts collimating mirror to reduce the fast axle angle of divergence and the slow axis angle of divergence, makes laser beam become nearly parallel beam; Remove luminous space between the bar bar with ladder lens then, and make light beam obtain compression at quick shaft direction; With the parallelepipedon prism with segment beam along quick shaft direction and slow-axis direction translation, semiconductor laser face battle array light beam is rearranged, reach the purpose that the fast and slow axis beam quality reaches unanimity.Can access the small light spot of high brightness through focusing through the light beam after rearranging.The used optical device of the present invention is easy to make, and is simple in structure, the convenient adjusting.
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Description of drawings:
Fig. 1 is a structural representation of the present invention.1 is laser instrument among the figure, and 2 is the fast axis collimation mirror, and 3 is the slow axis collimating mirror, and 4 is ladder lens, and 5 is the first parallelepipedon prism group, and 6 is the second parallelepipedon prism group, and 51,52,61,62 is the parallelepipedon prism.
Fig. 2 is a parallelepipedon prism stereographic map.
Fig. 3 is that light beam is through the first parallelepipedon prism group generation quick shaft direction translation synoptic diagram.51,52,61,62 is the parallelepipedon prism among the figure.
Fig. 4 is that light beam is through the second parallelepipedon prism group generation slow-axis direction translation synoptic diagram.51,52,61,62 is the parallelepipedon prism among the figure.
Fig. 5 light beam is through ladder lens, the first parallelepipedon prism group and the second parallelepipedon prism group light beam change procedure synoptic diagram.
Embodiment
As shown in Figure 1, the light-beam forming unit of surface array semiconductor laser of the present invention comprises fast axis collimation mirror 2, slow axis collimating mirror 3, ladder lens 4, the first parallelepipedon prism groups 5, the second parallelepipedon prism groups 6.
The light beam of surface array semiconductor laser outgoing is propagated along Z-direction; Before light beam changed directions without ladder lens 4, quick shaft direction i.e. Y direction shown in 1 among the figure, and slow-axis direction i.e. X-direction shown in 1 among the figure; Light beam is after ladder lens 4 changes directions, and quick shaft direction i.e. Z-direction shown in 1 among the figure, and slow-axis direction i.e. X-direction shown in 1 among the figure.
Described fast axis collimation mirror 2 adopts post lens, attached column lens or gradual index lens; Described slow axis collimating mirror 3 adopts the microtrabeculae lens arra.Fast axis collimation mirror 2 and slow axis collimating mirror 3 contact, and both are placed on face battle array laser beam output terminal, are respectively applied for to reduce the fast axle angle of divergence and the slow axis angle of divergence, make laser beam become nearly parallel beam.
Angle between two faces of described ladder lens 4 each step of formation is 135 °.This ladder lens 4 is placed on the light path of laser beam, and the rib of each step and the slow axis of light beam are same direction, promptly extend along X-direction.After light beam reflected through ladder lens 4, its direction of propagation turned over 90 ° of angles, and promptly light beam is propagated along Y direction, and has removed the luminous space between the bar bar, obtains compression at quick shaft direction simultaneously.
The semiconductor laser face battle array of forming with 20 LD Bar is an example, and each LD Bar is made up of 49 single tube semiconductor lasers, and the length of each single tube is 100 μ m, and the distance between the adjacent single tube is 200 μ m, and the spacing of each Bar bar is 1.8mm.Laser is being about 1 μ m perpendicular to the last active layer size of p-n junction in-plane (quick shaft direction), and the angle of divergence is 38 °; Be about 100 μ m in the size that is parallel to the last active layer of p-n junction in-plane (slow-axis direction), the angle of divergence is 10 °, the long 10mm of Bar.The quick shaft direction light beam overall height 34.2mm of surface array semiconductor laser.Can calculate:
BPP
fast＝0.001mm×38°×17.45*20＝12.662mm*mrad
BPP
slow＝0.1mm×10°×17.45*49＝855.05mm*mrad
Behind the fast axis collimation through the attached column lens, the fast axle angle of divergence is reduced to 8mrad, and the single Bar beam sizes of fast axle becomes 0.6mm, and the fast axial light parameter is long-pending:
BPP
fast＝0.6mm*8mrad*20＝96mm*mrad
With microlens array the light beam slow axis is collimated, the angle of divergence behind the collimation is about 90mrad, and slow axis beam is of a size of 10mm.The slow axis beam parameter is long-pending to be:
BPP
slow＝10mm×90mrad＝900mm*mrad
Nearly parallel beam behind the fast and slow axis collimation reflects on ladder lens 4, has removed the luminous space between the Bar bar, and has made fast axial light bundle size become 12mm, and for original 1/3rd, light energy distribution is homogenising more, as shown in Figure 1.
Can draw light beam by following formula and need divided hop count at slow-axis direction:
N＝sqrt(BPP
slow/BPP
slow)
Calculate as can be known according to following formula, the light beam of surface array semiconductor laser should be divided into three parts in left, center, right along slow-axis direction, and for the long LD Bar of 10mm, the width of each part is exactly 3.33mm; Be used for left and right two parts light beam is made up of two parallelepipedon prisms 51,52 along the first parallelepipedon prism group 5 that quick shaft direction moves, be used for left and right two parts light beam is made up of two parallelepipedon prisms 61,62 along the second parallelepipedon prism group 6 that slow-axis direction moves, the center section light beam is motionless; As shown in Figure 2, the thickness of parallelepipedon prism 51,52 should equal the width of each part, and promptly d=3.33mm highly equals the size of light beam at quick shaft direction, i.e. h=12mm.Angle between bottom surface AA ' CC ', the BB ' DD ' of parallelepipedon prism and two prism AA ' BB ', the CC ' DD ' is 45 °; Bottom surface AA ' CC ', BB ' DD ' are vertical with other two side ABCD, A ' B ' C ' D '.
As shown in Figure 3, the left half of light beam is by bottom surface AA ' CC ' vertical incidence of parallelepipedon prism 51, behind prism CC ' DD ' and prism AA ' BB ' two secondary reflections, by the vertical outgoing of bottom surface BB ' DD ', the left half of light beam is along the quick shaft direction 12mm that made progress translation.The right half of light beam is by bottom surface AA ' CC ' vertical incidence of parallelepipedon prism 52, behind prism CC ' DD ' and prism AA ' BB ' two secondary reflections, by the vertical outgoing of bottom surface BB ' DD ', the right half of light beam along the downward translation of quick shaft direction 12mm.Light beam is split into three parts like this, shown in Fig. 5 (c).
As shown in Figure 4, continue the translation light beam, make three segment beams stacked at quick shaft direction with parallelepipedon prism 61,62.Thickness d=the 12mm of parallelepipedon prism 61,62, height h=3.33mm.The left half light beam of parallelepipedon prism 51 bottom surface BB ' DD ' outgoing is by bottom surface AA ' CC ' vertical incidence of parallelepipedon prism 61, behind prism CC ' DD ' and prism AA ' BB ' two secondary reflections, by the vertical outgoing of bottom surface BB ' DD '.The right half light beam of parallelepipedon prism 52 bottom surface BB ' DD ' outgoing is by bottom surface AA ' CC ' vertical incidence of parallelepipedon prism 62, behind prism CC ' DD ' and prism AA ' BB ' two secondary reflections, by the vertical outgoing of bottom surface BB ' DD '.Like this, shown in Fig. 5 (c), 5 (d), the left half of light beam along slow-axis direction to right translation 3.33mm, the right half of light beam along slow-axis direction to left 3.33mm, three segment beams are stacked at quick shaft direction.
Cut apart and reset back slow axis beam quality and reduced to original 1/3rd, the fast axial light beam quality becomes original three times:
BPP
fast＝96×3＝288mm*mrad
BPP
slow＝900/3＝300mm*mrad
So, the fast and slow axis beam quality reaches unanimity.In fact, the semiconductor laser face battle array of 15-25 layer is divided into three parts as calculated, can reach good shaping effect.
With globe lens the light beam after resetting is focused on, just can obtain the small light spot of high brightness.
Claims (7)
1. the light-beam forming unit of a surface array semiconductor laser is characterized in that comprising fast axis collimation mirror (2), slow axis collimating mirror (3), ladder lens (4), the first parallelepipedon prism group (5), the second parallelepipedon prism group (6); Described fast axis collimation mirror (2) and slow axis collimating mirror (3) are placed on the light beam output terminal of surface array semiconductor laser, are respectively applied for to reduce the fast axle angle of divergence and the slow axis angle of divergence; Ladder lens (4) is placed on the light path of light beam, is used to remove the luminous space between the bar bar, and makes light beam obtain compression at quick shaft direction; The first parallelepipedon prism group (5) is placed on the reflected light path of ladder lens (4), is used to make segment beam along the quick shaft direction translation; The second parallelepipedon prism group (6) is placed on the emitting light path of the first parallelepipedon prism group (5), is used to make light beam after the quick shaft direction translation again along the slow-axis direction translation.
2. the light-beam forming unit of surface array semiconductor laser according to claim 1 is characterized in that described fast axis collimation mirror (2) adopts post lens, attached column lens or gradual index lens.
3. the light-beam forming unit of surface array semiconductor laser according to claim 2 is characterized in that described slow axis collimating mirror (3) adopts the microtrabeculae lens arra.
4. the light-beam forming unit of surface array semiconductor laser according to claim 1 is characterized in that the angle that described ladder lens (4) constitutes between two faces of each step is 135 °, and wherein reflecting surface and angle of beams are 45 °.
5. the light-beam forming unit of surface array semiconductor laser according to claim 1 is characterized in that the described first parallelepipedon prism group (5) is made of at least one parallelepipedon prism.
6. the light-beam forming unit of surface array semiconductor laser according to claim 5 is characterized in that the described second parallelepipedon prism group (6) is made of at least one parallelepipedon prism.
7. according to the light-beam forming unit of claim 5 or the described surface array semiconductor laser of 6 each claims, it is characterized in that two prisms are arranged on the described parallelepipedon prism; Angle between two bottom surfaces and two prisms is 45 °, with other two lateral vertical; Ladder lens (4) beam reflected is by a bottom surface vertical incidence of parallelepipedon prism, through the reflection of two prisms, again by the vertical outgoing in another bottom surface.
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| CNA2007100562189A CN101144909A (en) | 2007-10-25 | 2007-10-25 | Surface array semiconductor laser light beam shaping device |
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