CN103944066B - A kind of high-power semiconductor laser closes Shu Fangfa - Google Patents
A kind of high-power semiconductor laser closes Shu Fangfa Download PDFInfo
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- CN103944066B CN103944066B CN201410195567.9A CN201410195567A CN103944066B CN 103944066 B CN103944066 B CN 103944066B CN 201410195567 A CN201410195567 A CN 201410195567A CN 103944066 B CN103944066 B CN 103944066B
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Abstract
The present invention provides a kind of high-power semiconductor laser and closes Shu Fangfa, can obtain that uniformity is good, and energy density is big by this method, and beam diameter reduces the laser combined beam light source of half.The high-power semiconductor laser closes Shu Fangfa, including：The laser beam that each semiconductor laser unit of semiconductor laser stacks is sent is subjected to fast and slow axis collimation respectively；Laser beam after collimation is passed through into beam merging apparatus, so that a part of laser beam is along incident light axis horizontal exit or horizontal exit occurs after birefringence and with the displacement on vertical direction, another part laser beam occurs parallel with the laser beam of the horizontal exit after being totally reflected twice and forms plug hole and close beam outgoing.
Description
Technical Field
The invention belongs to the field of laser application, and particularly relates to a high-power semiconductor laser beam combining method.
Background
The semiconductor laser has the advantages of small volume, light weight, high reliability, long service life and low power consumption, and is widely applied to various fields of national economy at present, but the popularization and application of the current semiconductor laser are limited by the beam quality of the semiconductor laser, so that the improvement of the beam quality, the brightness and the power of the semiconductor laser is an important research direction at present. Laser beam combining technology has been developed rapidly in recent years, and is a process for improving beam quality, increasing output power, and increasing power density. Laser beam combining technology has been widely used in laser processing and high power fiber coupling products.
Currently, common laser beam combining methods include polarization beam combining, wavelength beam combining and spatial beam combining. A common polarization beam combination device comprises a 1/2 glass slide and a polarization beam splitter Prism (PBS), wherein one part of laser passes through the 1/2 glass slide to change the polarization state from TE to TM (or from TM to TE), and then is combined with the other part of laser. Because the polarization degree of a laser light source of the semiconductor laser is about 90%, for example, the polarized light emitted by the semiconductor laser with the polarization state of TE generally contains 90% of TE polarized light and 10% of TM polarized light, if polarization beam combination is adopted, the light energy loss is large, and the laser light is only suitable for beam combination in the fast axis direction, and the output light is mixed polarized light and cannot be polarized and combined with other light sources again; when the semiconductor laser stack array is used as a light source, the output light spots still keep a light-emitting dead zone between bar and bar, and the uniformity is poor. The wavelength beam combination is a combination of lasers with different wavelengths, but the wavelength beam combination cannot be applied to occasions requiring the lasers to have a single wavelength, so that the wavelength beam combination has limitation in the application field.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a high-power semiconductor laser beam combining method, and the laser beam combining light source which has good uniformity, large energy density and half-reduced beam diameter can be obtained by the method. The scheme is as follows:
the high-power semiconductor laser beam combining method comprises the following steps:
respectively carrying out fast-axis and slow-axis collimation on laser beams emitted by each semiconductor laser unit of the semiconductor laser stacked array;
and (3) enabling one part of the collimated laser beams to horizontally emit along an incident optical axis or horizontally emit after birefringence and have displacement in the vertical direction by passing the collimated laser beams through a beam combining device, and enabling the other part of the collimated laser beams to be parallel to the horizontally emitted laser beams after twice total reflection and form an inserted and empty combined beam to emit.
Based on the above basic solution, the present invention further performs the following optimization and limitation and examples of specific implementation structures:
the semiconductor laser unit is a semiconductor laser chip welded on the heat sink, and the semiconductor laser chip is a single-tube chip, a micro bar or a bar, or a plurality of single-tube chips, micro bars or bars.
The collimating lens group comprises a fast-axis collimating lens and a slow-axis collimating lens, wherein the fast-axis collimating lens can be a collimating D-shaped aspheric lens; the slow-axis collimating lens is a single-array cylindrical lens.
The first implementation structure:
the beam combining device comprises a reflecting interlayer diaphragm layer mirror and a total reflector, wherein reflecting films are plated on the lower surface of the flat lens at intervals, the number of the reflecting films is half of that of the semiconductor laser units, and the distance between the reflecting films is equal to the width of the reflecting films; the light emitting directions of the inter-reflection diaphragm layer mirror, the total reflection mirror and the semiconductor laser stacked array are all placed at 45 degrees and respectively correspond to the upper half part and the lower half part of the stacked height of the semiconductor laser stacked array, light emitted by each semiconductor laser unit still keeps equal spacing after being respectively collimated through the collimating lens group, the light of the upper half part is parallelly transmitted after being refracted twice through the inter-reflection diaphragm layer mirror, and the lower half part is inserted into a space to be combined with the transmission light of the upper half part after being reflected twice through the total reflection mirror and the inter-reflection diaphragm layer mirror reflection film in sequence.
The position of the beam combining device preferably satisfies the following coordinate relationship:
the method comprises the steps that the light emitting optical axis of a semiconductor laser unit at the lowest end of the upper half part of a semiconductor laser stacked array is taken as an X axis, the intersection point of the X axis and a reflecting diaphragm layer mirror is taken as a coordinate origin O, and the Y axis direction is taken as the stacked height direction of the semiconductor laser stacked array, so that a two-dimensional coordinate system is determined; the coordinate of the intersection point of the light-emitting optical axis of the semiconductor laser unit at the lowest end of the lower half part of the semiconductor laser stacked array and the mirror surface of the total reflection mirror is
Wherein g is the thickness of the reflecting interlayer diaphragm layer mirror, n is the refractive index of the lens material, w is the distance between light beams emitted by adjacent semiconductor laser units, d is the diameter of the light beams collimated by the semiconductor laser units, and m is the number of the used semiconductor laser units.
The gaps of the reflecting film can be plated with antireflection films, and the plating width satisfies the following relation:
and a = b, w > d
Wherein d is the diameter of the collimated beam of the semiconductor laser unit, a is the width of the antireflection film region, and b is the width of the reflection film region.
The second implementation structure:
the beam combining device is realized by adopting a prism combination, the prism combination is that N paralleled six-sided prisms with equal height and equal thickness are arranged in parallel at equal intervals, and the arrangement positions are sequentially provided with fixed upward displacement in the vertical direction.
The beam combining device specifically comprises N parallelepipedal prisms which are sequentially arranged in parallel at equal intervals along the light emitting direction of a semiconductor laser stack array, and the parallelepipedal prisms are sequentially displaced upwards in the stacking height direction of the semiconductor laser in the same way; the parallel six-sided prism has two adjacent side faces facing the semiconductor laser stack array; wherein the upper side face and the light emergent direction form an included angle of 45 degrees, and the lower side face and the upper side face form an included angle of 135 degrees;
the number N of the parallelepipedal prisms in the beam combining device and the number m of the semiconductor laser units satisfy the relationship:
when m is an even number, N = m/2;
when m is odd, N = m/2-1;
and the thickness and the height of the N parallelepipedal prisms are equal and satisfy the following relations:
the thickness satisfies the relation: d is more than or equal to a and less than or equal to w + d
The height satisfies the relation: h = (m-1) (w + d)
The positional relationship needs to satisfy the following coordinate relationship: the lowest end of the upper side surface of the first parallelepiped prism is taken as the origin O, and the coordinate value of the M point of the lowest end of the upper side surface of the Nth parallelepiped prism satisfies the requirement
y＝(N-1)(w+d)
x≥a
The laser unit comprises a semiconductor laser unit stack array, wherein m is the number of semiconductor laser units in the semiconductor laser unit stack array, N is the number of the parallelepiped prisms, w is the distance between light beams emitted by adjacent semiconductor laser units, d is the diameter of a laser beam emitted by the semiconductor laser unit, a is the thickness of each parallelepiped prism, and h is the height of each parallelepiped prism.
The third implementation structure:
the beam combining device is a combination of a parallelepiped prism and a plurality of triple prisms, the parallelepiped prism is provided with two adjacent side faces facing the semiconductor laser stacked array, the side face of the lower half portion of the parallelepiped prism is perpendicular to the optical axis of the laser beam, the side face of the upper half portion of the parallelepiped prism and the optical axis of the laser beam form an included angle of 45 degrees, the number of the triple prisms is half of the number of the laser units in the semiconductor laser stacked array, the light emergent face is tightly attached to the side face of the upper portion of the parallelepiped prism, the light incident face is perpendicular to the optical axis of the laser beam, and the single prism is respectively corresponding to the diameter of the laser beam emitted by the single semiconductor laser unit of the upper half portion of the semiconductor laser stacked array in the height direction.
The semiconductor laser stacked array is composed of even number of semiconductor laser units, and the thickness t and the width L of the parallelepiped prism satisfy that:
or alternatively
The semiconductor laser stacked array is composed of odd semiconductor laser units, and the thickness t and the width of the parallelepiped prism satisfy that:
the laser unit comprises a plurality of semiconductor laser units, wherein m is the number of the semiconductor laser units, d is the diameter of a laser beam emitted by each semiconductor laser unit, w is the distance between two adjacent semiconductor laser units, t is the thickness of a parallelepiped prism, and L is the width of the parallelepiped prism.
The invention has the following advantages:
1) The beam combining light source has single polarization characteristic, the light energy loss of the beam combining system is low, and the efficiency is improved;
2) The uniformity of the beam combining light spot is good, the purpose of reducing light integration parameter BPP (light emitting surface multiplied by divergence angle) can be achieved, the quality of the light beam can be improved, the output power density of the light beam can be improved, and the light beam is more beneficial to application;
3) The laser beam combining method is applicable to both the fast axis and the slow axis;
4) The beam combining device designed by combining the method has the advantages of simple raw material processing and lower cost.
Drawings
Fig. 1 is a schematic diagram of a high-power laser beam combining method.
Figure 2a is a schematic diagram of an embodiment.
FIG. 2b is a coordinate diagram of an embodiment.
Fig. 3a is a schematic diagram of the second embodiment.
FIG. 3b is a diagram of the coordinate relationship in the second embodiment.
Fig. 4 is an optimized design of the second embodiment.
Fig. 5 is a schematic diagram of the third embodiment.
The reference numbers illustrate: 1 is a semiconductor laser stacked array, 2 is a fast axis collimating lens, 3 is a slow axis collimating lens, 4 is an antireflection reflection inter-diaphragm layer mirror, 5 is a total reflection mirror, 6 is a beam combining system, 7 is a parallelepiped prism in example two, 8 is a triple prism, 9 is a parallelepiped prism in example three, and 10 is a collimating lens group.
Detailed Description
The solution of the invention is further illustrated below with reference to examples and figures.
Example one
Fig. 2a is a schematic diagram of an optical path of a high power semiconductor laser beam combiner incorporating the method of the present invention. A high-power semiconductor laser beam combining device comprises a semiconductor laser stack array 1, a collimating lens group 10 and a beam combining system 6 which are sequentially arranged along a light path, wherein the semiconductor laser stack array 1 is formed by stacking 4 groups of semiconductor laser units, the beam combining system 6 comprises a reflecting inter-diaphragm layer mirror 4 and a total reflector 5, the reflecting inter-diaphragm layer mirror 4 is formed by plating reflecting films on the lower surface of a flat lens at intervals, the number of the reflecting films is 2, and the distance between the reflecting films is equal to the width of the reflecting films; the reflecting intermediate diaphragm layer mirror 4, the total reflector 5 and the light-emitting direction of the semiconductor laser stacked array 1 are arranged at 45 degrees and respectively correspond to the upper half part and the lower half part of the stacking height of the semiconductor laser stacked array 1, light emitted by each semiconductor laser unit still keeps equal spacing after being respectively collimated through the collimating lens group 10, the light of the upper half part is parallelly transmitted after being refracted twice through the reflecting intermediate diaphragm layer mirror 4, and the lower half part is inserted into a space to be combined with the transmission light of the upper half part after being reflected twice through the reflective films of the total reflector 5 and the reflecting intermediate diaphragm layer mirror 4 in sequence.
As shown in fig. 2b, the position of the beam combining system satisfies the following coordinate relationship: the method comprises the steps that the light emitting optical axis of a semiconductor laser unit at the lowest end of the upper half part of a semiconductor laser stacked array is taken as an X axis, the intersection point of the X axis and a reflecting diaphragm layer mirror is taken as a coordinate origin O, and the Y axis direction is taken as the stacked height direction of the semiconductor laser stacked array, so that a two-dimensional coordinate system is determined; then the coordinate of the intersection point Q of the light-emitting optical axis of the semiconductor laser unit at the lowermost end of the lower half part of the semiconductor laser stacked array and the mirror surface of the total reflection mirror is
Wherein g is the thickness of the reflecting interlayer diaphragm layer mirror, n is the refractive index of the lens material, w is the beam distance emitted by the adjacent semiconductor laser units, and d is the beam diameter after the semiconductor laser units are collimated.
The material of the reflecting interlayer diaphragm layer mirror is glass, an antireflection film and a reflecting film are plated on the lower surface of the lens, the antireflection film and the reflecting film are arranged at equal intervals in width and equal in number, and the number of the antireflection film or the reflecting film is m/2. The plating film widths a and b satisfy the following relationship:
and a = b, w > d
Wherein, a is the width of the antireflection film area, and b is the width of the reflection film area;
the laser beam entering the reflective diaphragm layer mirror will be refracted for 2 times, and the vertical displacement of the emergent light and the incident light is
Wherein, theta is the radian of the incident angle, and n is the refractive index of the lens.
The semiconductor laser unit is a semiconductor laser chip welded on the heat sink, and the semiconductor laser chip is a single-tube chip, a micro bar or a bar, or a plurality of single-tube chips, micro bars or bars.
The collimating lens group comprises a fast axis collimating lens and a slow axis collimating lens, wherein the fast axis collimating lens can be a collimating D-shaped aspheric lens; the slow-axis collimating lens is a single-array cylindrical lens.
The base material of the total reflector is glass or metal, when the material of the total reflector is metal, the total reflector can be made of metal copper, metal aluminum alloy or stainless steel material, the surface of the total reflector is plated with a high-reflection film, and the material of the high-reflection film is metal silver or metal gold or other reflection films with high emission effects; or the high-reflection film adopts a multilayer medium reflection film, and the multilayer medium reflection film is made of the optional sequentially-plated TiO 2 And SiO 2 Or other multilayer dielectric reflective film material.
The beam combining system is arranged on a fixed frame according to the coordinate relation, and the fixed frame can be made of plastic, aluminum, steel or copper.
Example two
Fig. 3a is an embodiment of a beam combining system of a semiconductor laser designed in conjunction with the beam combining method of the present invention. The laser beam combining system mainly comprises a semiconductor laser stacked array 1, a collimating lens group 10 and a beam combining system 6, wherein the semiconductor laser stacked array 1 comprises 4 semiconductor laser units; the collimating lens group is arranged at the laser emergent position of the semiconductor laser and comprises a fast axis collimating lens 2 and a slow axis collimating array 3, wherein the fast axis collimating lens can be a collimating D-shaped aspheric lens; the slow axis collimation array is a single array cylindrical lens; the beam combining system 6 is placed in the emergent direction of the collimated laser beams and consists of 2 parallelepipedal prisms 7, the 2 parallelepipedal prisms 7 are mutually parallel and are placed at equal intervals, and the placing positions are sequentially fixed and upwardly displaced in the vertical direction. The parallelepiped prism 7 has two adjacent side faces facing the semiconductor laser stack array, the upper side face and the laser optical axis form an included angle of 45 degrees, and the other side face is vertically placed and forms an included angle of 135 degrees with the upper side face. After laser beams emitted by the semiconductor laser stacked array pass through the beam combining device, the diameter of the beams is half of the original diameter, and the energy density is 2 times of the incident light energy density.
The semiconductor laser unit is a semiconductor laser chip welded on the heat sink, and the semiconductor laser chip is a single-tube chip, a micro bar or a bar, or a plurality of single-tube chips, micro bars or bars.
The number of the parallelepipedal prisms in the beam combining system is 2, the thicknesses of the 2 parallelepipedal prisms are equal, the heights of the parallelepipedal prisms are equal to each other, and the following relations are satisfied:
the thickness satisfies the relation: d is more than or equal to a and less than or equal to w + d
The height satisfies the relation: h =3 (w + d)
The positional relationship of the 2 parallelepipedal prisms shown in FIG. 3b should satisfy the following coordinate relationship: taking the lowest end of the upper reflecting surface of the first parallelepiped prism as the origin O, the coordinate value of the M point at the lowest end of the upper reflecting surface of the 2 nd parallelepiped prism satisfies the requirement
y＝w+d
x≥a
W is the distance between light beams emitted by adjacent semiconductor laser units, d is the diameter of a laser beam emitted by the semiconductor laser unit, a is the thickness of the single-piece parallelepiped prism, and h is the height of the single-piece parallelepiped prism.
The incident plane and the emergent plane of the parallelepiped prism are preferably coated with antireflection film.
The 2 parallelepipedal prisms can be fixed by a fixing frame made of plastic, aluminum, steel or copper.
Fig. 4 is an optimized design made by combining the beam combining device of the semiconductor laser in this embodiment, where N identical parallelepipedal prisms are combined, and the N parallelepipedal prisms are sequentially and closely attached and sequentially shifted upward by w + d, and the thickness of each parallelepipedal prism is w + d; or a combination of such N identical parallelepiped prisms as a single piece. Fig. 4 adopts a combination of three parallelepipedal prisms as a beam combining device, and the three parallelepipedal prisms are tightly attached to each other in the light emitting direction and can be made into an integral piece, so that the volume of the beam combining device is reduced, and the material and the cost are saved.
EXAMPLE III
Fig. 5 is an embodiment of a beam combining system of a semiconductor laser designed by combining the beam combining method of the present invention, and the beam combining system of a high power semiconductor laser includes a stack array 1 of semiconductor lasers, a collimating lens group 10 and a beam combining device 6, which are sequentially arranged along an optical path, where the collimating lens group 10 includes a fast axis collimating lens 2 and a slow axis collimating array 3, where the fast axis collimating lens is a collimating D-type aspheric lens, and the slow axis collimating array is a single-array cylindrical lens. The small prism in the prism combination in the beam combining device 6 is selected from a triangular prism 8, and the included angle of the acute angles of two adjacent side surfaces of a parallelepiped prism 9 is 45 degrees. The semiconductor laser stacked array is equally divided into an upper part and a lower part, for example, the semiconductor laser stacked array 1 includes 4 semiconductor laser units, the upper 2 semiconductor laser units are used as the upper part of the semiconductor laser stacked array 1, the lower 2 semiconductor laser units are used as the lower part of the semiconductor laser stacked array 1, the small prisms in the prism combination are 2 triple prisms 8, the partial laser beams on the semiconductor laser stacked array vertically enter the incident surfaces of the 2 triple prisms 8 in the prism combination 8, namely, the laser beams emitted by the 2 semiconductor laser units on the upper part of the semiconductor laser stacked array 1 respectively enter the incident surfaces of the 2 triple prisms, because the incident direction of the laser beams is perpendicular to the incident surfaces of the triple prisms, no refraction occurs inside the triple prisms, the laser beams enter the incident surfaces of the triple prisms 8 and then horizontally emit from the emergent surfaces of the parallelepipedal prisms 9, namely, the emergent direction is consistent with the incident direction, the laser beams on the parallelepipedal prisms 9 on the lower part of the semiconductor laser stacked array 1 vertically enter the parallelepipedal prisms 9 and then are totally reflected twice through two opposite surfaces of the parallelepipedal prisms 9, and then horizontally emit laser beams with the laser beams emitted from the upper part. The energy density of the combined beam is 2 times of the incident light energy density, and the diameter of the combined beam is half of the diameter of laser light emitted by the semiconductor laser stacked array.
The thickness t and the width L of the parallelepiped prism satisfy:
w is the distance between two adjacent semiconductor laser units; t is the thickness of the parallelepiped prism; and L is the width of the parallelepiped prism.
The small prisms in the prism combination adopt triangular prisms, and all the small prisms are arranged at equal intervals and satisfy the following relations:
wherein d is the diameter of the collimated light beam of a single semiconductor laser unit, a is the width of the light emergent surface of the triple prism, b is the interval of the triple prism, x is the height of the incident surface of the triple prism, and w is the interval between two adjacent semiconductor laser units.
The semiconductor laser unit is a semiconductor laser chip welded on the heat sink, and the semiconductor laser chip is a single-tube chip, a micro bar or a bar, or a plurality of single-tube chips, micro bars or bars.
The material of the parallelepipedal prism can adopt glass, and the incident surface and the emergent surface can be coated with antireflection films.
In the embodiment of the invention, the purpose of reducing the light integration parameter BPP (light emitting surface multiplied by divergence angle) can be achieved, the beam quality can be improved, and the output power density can be improved, so that the application is more facilitated.
Claims (3)
1. A high-power semiconductor laser beam combining method comprises the following steps:
respectively carrying out fast-axis and slow-axis collimation on laser beams emitted by all semiconductor laser units of a semiconductor laser stacked array;
the collimated laser beams pass through a combination of a parallelepiped prism and a plurality of triple prisms, so that a part of laser beams horizontally exit along an incident optical axis or horizontally exit after birefringence and have displacement in the vertical direction, and the other part of laser beams are parallel to the horizontally exiting laser beams after twice total reflection and form an inserted and empty combined beam to exit;
the semiconductor laser stacked array comprises a semiconductor laser stacked array, a light-emitting surface, a light-entering surface and a single triple prism, wherein the semiconductor laser stacked array is provided with two adjacent side surfaces, the two adjacent side surfaces face the semiconductor laser stacked array, the side surface of the lower half part of the parallel six prism is vertical to the optical axis of a laser beam, the side surface of the upper half part of the parallel six prism forms an included angle of 45 degrees with the optical axis of the laser beam, the number of the triple prisms is half of the number of laser units in the semiconductor laser stacked array, the light-emitting surface is tightly attached to the side surface of the upper half part of the parallel six prism, the light-entering surface is vertical to the optical axis of the laser beam, and the single triple prism is respectively corresponding to the diameter of the laser beam emitted by the single semiconductor laser unit of the upper half part of the semiconductor laser stacked array in the height direction;
the semiconductor laser stacked array is composed of even number of semiconductor laser units, and the thickness t and the width L of the parallelepiped prism satisfy that:
or
The semiconductor laser stacked array is composed of odd semiconductor laser units, and the thickness t and the width of the parallelepiped prism satisfy that:
the laser unit comprises a plurality of semiconductor laser units, wherein m is the number of the semiconductor laser units, d is the diameter of a laser beam emitted by each semiconductor laser unit, w is the distance between two adjacent semiconductor laser units, t is the thickness of a parallelepiped prism, and L is the width of the parallelepiped prism.
2. The high power semiconductor laser beam combining method according to claim 1, characterized in that: the semiconductor laser unit is a semiconductor laser chip welded on the heat sink, and the semiconductor laser chip is a single-tube chip or a bar, or a plurality of single-tube chips or bars.
3. The high power semiconductor laser beam combining method according to claim 1, characterized in that: the fast axis and the slow axis collimation respectively adopt a fast axis collimation lens and a slow axis collimation lens, wherein the fast axis collimation lens is a collimation D-type aspheric lens; the slow-axis collimating lens is a single-array cylindrical lens.
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| CN104808347B (en) * | 2015-05-13 | 2017-03-22 | 中国人民解放军国防科学技术大学 | High-duty cycle beam-combination system based on birefringent crystal |
| CN106253048B (en) * | 2016-08-30 | 2022-03-22 | 西安炬光科技股份有限公司 | High-power semiconductor laser system for realizing uniform light spots |
| CN110488427A (en) * | 2018-05-14 | 2019-11-22 | 深圳市联赢激光股份有限公司 | A kind of laser light source coupling device and method |
| CN111367087A (en) * | 2018-12-25 | 2020-07-03 | 潍坊华光光电子有限公司 | Laser beam combining device and method |
| CN109719088B (en) * | 2019-01-24 | 2023-10-24 | 武汉锐科光纤激光技术股份有限公司 | Laser cleaning device |
| CN112782860A (en) * | 2019-11-01 | 2021-05-11 | 广州光联电子科技有限公司 | Light source system |
| CN110967794B (en) * | 2019-11-21 | 2021-10-29 | 深圳市易飞扬通信技术有限公司 | Multi-beam combining assembly, light emitting assembly and light module |
| CN112164975B (en) * | 2020-09-27 | 2021-08-17 | 西安立芯光电科技有限公司 | Beam combining method and beam combining device for semiconductor laser chip |
| CN114094444B (en) * | 2021-10-26 | 2024-04-19 | 中国电子科技集团公司第十一研究所 | Laser diode area array system for realizing uniform flat-top distribution |
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Address after: 710077 Xi'an hi tech Zone 56, Xi'an, Shaanxi Province, No. 56 Patentee after: FOCUSLIGHT TECHNOLOGIES INC. Address before: 710119 Third Floor, Building 10, 17 Information Avenue, New Industrial Park, Xi'an High-tech Zone, Shaanxi Province Patentee before: Xi'an Focuslight Technology Co., Ltd. |