CN1651972A - Method for realizing semiconductor laser beam shaping by off-axis total internal reflection prism array - Google Patents
Method for realizing semiconductor laser beam shaping by off-axis total internal reflection prism array Download PDFInfo
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Abstract
The method for realizing the beam shaping of the semiconductor laser by the off-axis total internal reflection prism array is characterized in that: the light beam splitting array is formed by reflecting prisms with different displacements on an optical axis, the right-angle side of the prism is perpendicular to the optical axis, a collimated line light beam passes through a first vertical surface of the prism and is split into N sections of light beams with the same number, the light beams enter a second 45-degree reflecting surface which is perpendicular to the first reflecting surface after entering the prism and reaching 45-degree reflecting surfaces, the light beams are totally reflected by the second 45-degree reflecting surface and then are emitted from the other vertical surface of the prism, and the split light beams are rotated and superposed to form a light beam stack due to certain displacement difference of the prisms, so that the light spot size in the fast axis direction is increased by N times, and the light spot size in the slow axis direction is reduced to 1/N of the original light beam, and the conversion from the line light beam to a round light beam or a square light beam is. The invention has the characteristics of easy adjustment, simple structure and low cost.
Description
Technical field
The present invention relates to a kind of shaping methods of semiconductor laser array light beam, belong to the laser technology application.
Background technology
Beam parameter product is an important indicator weighing laser beam.Beam parameter product is the diameter of light beam and the product of its far-field divergence angle.When laser beam was transmitted in general optical system, the beam parameter product of light beam was constant.Semiconductor laser is little owing to volume, power is big, the high application that obtains more and more widely of electro-optical efficiency.Multiple Quantum Well (the Multi-Quantum-Well of present widespread usage, MQW) semiconductor laser is luminous has following characteristics: first, the luminous chamber of semiconductor laser physical dimension is asymmetric, level and vertical direction are respectively 100～150 microns and 1 micron, far-field distribution is astigmatism ellipticity, perpendicular to light-emitting area be the quick shaft direction angle of divergence (representative value is 36 °) greater than parallel be slow-axis direction (representative value is 8 °).Second, high power semiconductor lasers is not a single luminous zone, but the array that constitutes by a plurality of luminous zones, therefore the area of luminous zone is bigger, often all surpass 10 millimeters, therefore its beam parameter product fast, slow-axis direction differs greatly, reach 500 times, the beam parameter product of the storehouse profile battle array that is made of many wire-type semiconductor laser instruments also differs more than 10 times, so for balance is fast, the slow axis beam parameter product, must reduce the beam parameter product of slow-axis direction, increase the beam parameter product of quick shaft direction simultaneously, promptly so-called beam shaping conversion.
In actual applications, need concentration of energy, the angle of divergence is little, the laser beam of the focused beam that collimation is high or optical fiber coupling, and for high-power semiconductor laser, the optical fiber coupling is most convenient, also is most important a kind of beam shaping.Beam shaping is exactly the beam parameter product that reduces slow-axis direction, the beam parameter product that increases quick shaft direction, reaches the beam parameter product balance of both direction.All rounded or square when briefly, making beam Propagation arrive any position exactly.Existing shaping methods has: refraction shaping methods, reflection shaping methods and folding/reflection are in conjunction with the shaping method.For the refraction shaping methods, be exactly according to refraction principle, light beam incides in the transparent medium (as glass etc.) with certain angle, and direction will change.If this medium is parallel uniform dielectric, the direction of propagation was constant after light beam passed this medium, but the position will be moved in the plane of incidence.Different amount of movements can be controlled by the thickness of different incident angles and medium.Adopt the multi-layer transparent medium can realize the rearrangement of light beam, thereby reach the purpose of beam shaping.The Wuhan photoelectricity company limited of reaching the clouds adopts this way exactly.
Folding/reef knot closes the shaping method, generally is to utilize the hypotenuse of an isosceles right-angle prism to be plane of refraction, and two right-angle sides are reflecting surface, place the rearrangement of finishing light beam by two stair-stepping prism arrays by certain position, thereby reach the purpose of shaping.But refraction shaping method and catadioptric are in conjunction with the shaping method, because the refraction of process and the number of times of reflection are more, under the relatively poor situation of beam collimation degree, light beam through repeatedly reflect and reflect after can disperse come, the size of the light beam after the shaping can collimate the size of the light beam rearrangement under the situation much larger than height.U.S. Apollo Instruments company adopts catadioptric in conjunction with shaping technique exactly.
Reflective shaping method is made of mutually perpendicular two groups of catoptrons exactly, and every group of catoptron is made up of the several catoptrons with certain displacement difference, and this displacement difference is exactly the width of light beam on the quick shaft direction.The pseudo-parallel line light beam by first group of reflection after, form several hot spots at quick shaft direction with certain displacement deviation, these hot spots are through second group of mirror stack, form parallel to each other, at the quick shaft direction square focus spot.The beam parameter product of quick shaft direction just increases several times like this, and slow-axis direction just is reduced to original some/one.External Jenoptik company adopts technology exactly.Deviation has taken place in this technology light path on the one hand, forms non-coaxial light path, and each part of hot spot all will reflect in the reflection process on the other hand, and efficient will reduce.
Summary of the invention
Technology of the present invention is dealt with problems and is: overcome the deficiencies in the prior art, provide a kind of abaxile total internal reflection prism array to realize the semiconductor laser device beam shaping method, adopt this method to make the shaping device reduce half, saved cost on the one hand, reduced the adjustment difficulty on the other hand, and owing to, reduced this link of reflecting surface plated film so satisfy total reflection condition only in the glass medium internal reflection.
Technical solution of the present invention is: abaxile total internal reflection prism array is realized the semiconductor laser device beam shaping method, its characteristics are: the light beam array segmentation that adopts the reflecting prism formation with different displacements on optical axis, make the right-angle side of this prism vertical with optical axis, Line beam behind the collimation is by behind first vertical plane of prism, be divided into the same number of N section light beam, after entering prism inside and reaching 45 ° of reflectings surface, enter and mutually perpendicular second 45 ° of reflecting surface of first reflecting surface, after this face total reflection, another vertical plane outgoing from prism, because each prism has certain displacement difference, divided light beam produces rotation stack back and forms the light beam heap, make the spot size of quick shaft direction increase N doubly, the spot size of slow-axis direction is reduced to original 1/N, has so just realized the conversion of Line beam to circle light beam or square light beam.
The present invention with existing reflection, the refraction shaping technique is compared has following advantage: first, adopt one group of reflecting prism array realization light beam to cut apart, rotate and the stack shaping from axle at 2 realizations of prism internal reflection light beam, than traditional reflection shaping, the shaping device has reduced half, save cost on the one hand, reduced the adjustment difficulty on the other hand; Second, because only in the glass medium internal reflection, can reduce this link of reflecting surface plated film so satisfy total reflection condition, and only need in incident, plate anti-reflection film, can also in orthopedic systems, add easily at last to observe pilot light in the visible light wave range and as external reflection, need or not and be coated with Double-color film at reflecting surface, make the energy light beam have high reflection and the observation pilot light has high permeability, make the energy light of system and indication light beam coaxial.
Description of drawings
Fig. 1 is the multimode optical fiber coupling optical path figure of 5 shapings, shaping beams focusing and the focused beam of the collimation of entire semiconductor device array beams of the present invention, collimated light beam.Wherein: 1 is bar array semiconductor laser LDA, and 2 is fast axial light beam collimator FAC, and 3 is slow axis beam collimating apparatus SAC, and 4 for shaping micro reflector array SMM, and 5 are the cylinder beam-expanding system of looking in the distance, and 6 be two condenser lenses that glue together, and 7 is the multimode coupled fiber.
Fig. 2 has shown that shaping folds 5 times the little reflecting prism array structure of abaxile total internal reflection shaping.
Fig. 3 (a) is the bar battle array light beam before the shaping, and Fig. 3 (b) is the light beam after folding through 5 shapings, and after Fig. 3 (c) restrainted twice for shaping light beam process slow axis expands, light beam was by the linear square that become.
Fig. 4 is the collimation of entire semiconductor device array beams among the present invention, folding 7 shapings of collimated light beam and the multimode optical fiber coupling optical path figure of beams focusing and focused beam, 1 is bar array semiconductor laser LDA, 2 is fast axial light beam collimator FAC, 3 is slow axis beam collimating apparatus SAC, 4 are the little reflecting prism array of shaping SMM, 5 are the cylinder beam-expanding system of looking in the distance, and 6 is two gummed condenser lenses, and 7 is the multimode coupled fiber.
Fig. 5 has shown that shaping folds 7 times the little reflecting prism array structure of abaxile total internal reflection shaping.
Fig. 6 (a) is the bar battle array light beam before the employing shaping of the present invention, and 6 (b) are the light beam after process the present invention folds 7 shapings, and after 6 (c) restrainted twice for shaping light beam process slow axis expands, light beam was by the linear square that become.
Embodiment
The present invention adopts one group of little reflecting prism array can realize bar battle array light beam to the shaping conversion of square beam of light, and light beam has carried out 2 secondary reflections in shaping is neat, and the preceding light beam of light beam and shaping is from axle after the shaping, so shaping efficient improves, and concrete steps are as follows:
(1) at different shaping beam-folding requirements, select the beam shaping of the microprism formation of different size thickness, different numbers for use, segmentation times is an arbitrary integer, so the number of microprism is an arbitrary integer.
(2), design the thickness and the number of reshaper according to the needs of shaping folding times.Microprism processing separately glues together by the array mode of Fig. 2 as shown in Figure 2 then.
(3) correction for direction micro-reflector group is placed semiconductor laser collimated light beam light path, make the right-angle side of microprism vertical with the optical axis of light beam, light beam enters first inclined-plane of prism after by right-angle side, each divided light beam upwards arrives second inclined-plane in the reflection back on the inclined-plane of each prism, reflecting back another right-angle side from prism left through second inclined-plane vertically penetrates, form the rectangular light spot shown in Fig. 3 (b), after the process cylindrical lens constitutes the beam-expanding system of looking in the distance, form foursquare hot spot, shown in Fig. 3 (c).
(4) with the condenser lens of shaping light beam by two gummeds, on its focal plane, form a focal beam spot, it is coupled in the multimode optical fiber.
The present invention is with beam-folding 5 and be for 7 times that example further describes.
Embodiment 1, beam-folding 5 times.
(1) as shown in Figure 1, behind the bar array semiconductor laser process fast and slow axis collimation microlens array, form the line style hot spot of 10mm * 0.8mm, the angle of divergence is 0.2 ° * 2.4 °, in order evenly to cut apart the 10mm hot spot in the longitudinal direction, the thickness of each reflecting prism in the shaping micro reflector array should be 2mm, and the number of micro-reflector is 5.
(2) according to the needs of shaping folding times 5 times, the thickness of each reflecting prism in the shaping micro reflector array should be 2mm, two right-angle side length of sides of prism are 0.8mm, the displacement of each prism also is 0.8mm, consider actual fabrication and debug situation, be designed to the reshaper that five micro reflector arrays shown in Figure 2 constitute.Microprism is processed separately, glues together by the array mode of Fig. 2 then.
(3) correction for direction micro-reflector group is placed semiconductor laser collimated light beam light path, make the right-angle side of microprism vertical with the optical axis of light beam, light beam enters first inclined-plane of prism after by right-angle side, each divided light beam upwards arrives second inclined-plane in the reflection back on the inclined-plane of each prism, reflecting back another right-angle side from prism left through second inclined-plane vertically penetrates, form the rectangular light spot shown in Fig. 3 (b), after the process cylindrical lens constitutes the beam-expanding system of looking in the distance, form foursquare hot spot, shown in Fig. 3 (c).
(4) with the condenser lens of shaping light beam by two gummeds, on its focal plane, form a focal beam spot, it is coupled in the multimode optical fiber.
The course of work of present embodiment is: as Fig. 1, shown in 2, the light beam that the bar array semiconductor laser array sends is through fast, slow axis collimation back forms a bar shaped quasi-parallel light beam, its spot size is approximately 10mm * 0.8mm, the angle of divergence is 2.4 ° * 0.1 °, incide the vertical surface of the reshaper that constitutes by 5 microprisms, these three prisms have the displacement difference of 0.8mm each other, light beam enters prism separately after being divided into 5 long parts of 2mm after by right-angle side, arrive all upwards reflections of 45 ° of hypotenuse reflectings surface respectively, arrive and the first prism hypotenuse, second hypotenuse at 45, reflect another right-angle side outgoing then respectively to the right by prism, 5 of being parallel to each other of formation, length and width are respectively 2mm * 0.8mm, whole hot spot forms the accurate square focus spot of 4mm * 2mm, the angle of divergence is 2.4 ° * 0.1 °, adopt focal length to be-19mm and 38mm at slow-axis direction, bore is that the telescopic system that the cylindrical lens of 19mm and 25.4mm is formed expands 2 times of bundles, this moment, whole hot spot became 4mm * 4mm, the angle of divergence becomes 0.2 ° * 1.2 °, the employing focal length is 15mm, after bore is two gummed condenser lenses of 6mm, spot size is 60um * 312um, the aperture angle sine is 0.2, so satisfy coupling core diameter 400um, in the multimode optical fiber of numerical aperture 0.22, form fiber coupled laser diode.
As shown in Figure 3, Fig. 3 (a) is the bar battle array light beam before the shaping, Fig. 3 (b) is through after the method shaping of the present invention, light beam size on slow axis narrows down to original 1/5, be increased to original 5 times at quick shaft direction, whole light beam is by the linear dead square that become, and Fig. 3 (c) shows it is that light beam was by the linear square that become after the shaping light beam expanded the bundle twice through slow axis.
(1) as shown in Figure 4, behind the bar array semiconductor laser process fast and slow axis collimation microlens array, form the line style hot spot of 10.5mm * 0.8mm, the angle of divergence is 0.2 ° * 2.4 °, in order evenly to cut apart the hot spot of 10.5mm in the longitudinal direction, the thickness of each reflecting prism in the little reflecting prism array of shaping should be 1.5mm, and total number is 7.
(2) according to the needs of shaping folding times 7 times, the thickness of each reflecting prism in the little reflecting prism array of shaping should be 1.5mm, two right-angle side length of sides of prism are 0.8mm, the displacement of each prism also is 0.8mm, consider actual fabrication and debug situation, be designed to five reshapers that little reflecting prism array constitutes shown in Figure 5.Microprism is processed separately, glues together by the array mode of Fig. 5 then.
(3) the little reflecting prism group of correction for direction is placed semiconductor laser collimated light beam light path, make the right-angle side of microprism vertical with the optical axis of light beam, light beam enters first inclined-plane of prism after by right-angle side, each divided light beam upwards arrives second inclined-plane in the reflection back on the inclined-plane of each prism, reflecting back another right-angle side from prism left through second inclined-plane vertically penetrates, form the rectangular light spot shown in Fig. 6 (b), after the process cylindrical lens constitutes the beam-expanding system of looking in the distance, form foursquare hot spot, shown in Fig. 6 (c).
(4) with the condenser lens of shaping light beam by two gummeds, on its focal plane, form a focal beam spot, it is coupled in the multimode optical fiber.
The course of work of present embodiment is: as Fig. 4, shown in 5, the light beam that the bar array semiconductor laser array sends is through fast, slow axis collimation back forms a bar shaped quasi-parallel light beam, its spot size is approximately 10.5mm * 0.8mm, the angle of divergence is 2.4 ° * 0.1 °, incide the vertical surface of the reshaper that constitutes by 7 microprisms, these three prisms have the displacement difference of 0.8mm each other, light beam enters prism separately after being divided into 7 long parts of 1.5mm after by right-angle side, arrive all upwards reflections of 45 ° of hypotenuse reflectings surface respectively, arrive and the first prism hypotenuse, second hypotenuse at 45, reflect another right-angle side outgoing then respectively to the right by prism, 7 of being parallel to each other of formation, length and width are respectively 1.5mm * 0.8mm, whole hot spot forms the accurate square focus spot of 5.6mm * 1.5mm, the angle of divergence is 2.4 ° * 0.1 °, adopt focal length to be-7.7mm and 23mm at slow-axis direction, bore is that the telescopic system that the cylindrical lens of 5mm and 12.7mm is formed expands 3 times of bundles, this moment, whole hot spot became 5.6mm * 4.5mm, the angle of divergence becomes 0.2 ° * 0.8 °, the employing focal length is 12.7mm, after bore is two gummed condenser lenses of 8mm, spot size is 60um * 178um, the aperture angle sine is 0.2, so satisfy coupling core diameter 200um, in the multimode optical fiber of numerical aperture 0.22, form fiber coupled laser diode.
Whole optical path after the shaping has been rotated 90 ° with respect to original light path, and has produced translation, and light beam all with the form propagation of total reflection, therefore is referred to as the shaping of abaxile completely reflecting mirror array beams in reshaper.
As shown in Figure 6, bar battle array light beam before Fig. 6 (a) shaping, (b) show it is through after this method shaping, light beam size on slow axis narrows down to original 1/7, be increased to original 7 times at quick shaft direction, whole light beam is by the linear dead square that become, and after 6 (c) restrainted twice for shaping light beam process slow axis expands, light beam was by the linear square that become.
The folding shaping number of times of light beam of the present invention is not limited only to 5 or 7 times, and more times can also be arranged.
Claims (2)
1, abaxile total internal reflection prism array is realized the semiconductor laser device beam shaping method, it is characterized in that: the light beam array segmentation that on optical axis, adopts reflecting prism formation with different displacements, make the right-angle side of this prism vertical with optical axis, Line beam behind the collimation is by behind first vertical plane of prism, be divided into the same number of N section light beam, after entering prism inside and reaching 45 ° of reflectings surface, enter and mutually perpendicular second 45 ° of reflecting surface of first reflecting surface, after this face total reflection, another vertical plane outgoing from prism, because each prism has certain displacement difference, divided light beam produces rotation stack back and forms the light beam heap, make the spot size of quick shaft direction increase N doubly, the spot size of slow-axis direction is reduced to original 1/N, has so just realized the conversion of Line beam to circle light beam or square light beam.
2, realize the semiconductor laser device beam shaping method according to the described abaxile total internal reflection prism of claim 1 array, it is characterized in that: described beam-folding shaping number of times is 5 times or 7 times.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102004320A (en) * | 2010-09-30 | 2011-04-06 | 北京工业大学 | High-power semiconductor laser array fast and slow axis beam quality homogenization device |
| CN104614815A (en) * | 2014-12-11 | 2015-05-13 | 北京工业大学 | Fiber coupling type optical module of multi-single-tube semiconductor laser |
| CN104880829A (en) * | 2015-06-16 | 2015-09-02 | 吕志伟 | Light-beam translation reflector and method employing light-beam translation reflector to achieve light beam translation |
| CN105301782A (en) * | 2015-10-22 | 2016-02-03 | 河海大学 | Rotary beam expanding device and method of light source |
| CN105676378A (en) * | 2016-03-28 | 2016-06-15 | 北京工业大学 | Fiber coupling system |
| CN107044620A (en) * | 2016-02-05 | 2017-08-15 | 深圳市绎立锐光科技开发有限公司 | Hot spot pressure texture and light supply apparatus |
| CN107255868A (en) * | 2017-08-14 | 2017-10-17 | 温州泛波激光有限公司 | A kind of sharp combiner method and apparatus |
| CN112753146A (en) * | 2018-09-24 | 2021-05-04 | ams传感器亚洲私人有限公司 | Improved lighting device |
| WO2023142851A1 (en) * | 2022-01-29 | 2023-08-03 | 西安炬光科技股份有限公司 | Laser detection device and control method thereof |
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2005
- 2005-02-07 CN CN 200510011331 patent/CN1651972A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102004320A (en) * | 2010-09-30 | 2011-04-06 | 北京工业大学 | High-power semiconductor laser array fast and slow axis beam quality homogenization device |
| CN104614815A (en) * | 2014-12-11 | 2015-05-13 | 北京工业大学 | Fiber coupling type optical module of multi-single-tube semiconductor laser |
| CN104880829A (en) * | 2015-06-16 | 2015-09-02 | 吕志伟 | Light-beam translation reflector and method employing light-beam translation reflector to achieve light beam translation |
| CN105301782B (en) * | 2015-10-22 | 2017-06-09 | 河海大学 | Light source rotation expands device and expands method |
| CN105301782A (en) * | 2015-10-22 | 2016-02-03 | 河海大学 | Rotary beam expanding device and method of light source |
| CN107044620A (en) * | 2016-02-05 | 2017-08-15 | 深圳市绎立锐光科技开发有限公司 | Hot spot pressure texture and light supply apparatus |
| CN107044620B (en) * | 2016-02-05 | 2021-02-26 | 深圳光峰科技股份有限公司 | Light spot compression structure and light source device |
| CN105676378A (en) * | 2016-03-28 | 2016-06-15 | 北京工业大学 | Fiber coupling system |
| CN105676378B (en) * | 2016-03-28 | 2018-02-09 | 北京工业大学 | A kind of fiber coupling system |
| CN107255868A (en) * | 2017-08-14 | 2017-10-17 | 温州泛波激光有限公司 | A kind of sharp combiner method and apparatus |
| CN107255868B (en) * | 2017-08-14 | 2020-06-23 | 温州泛波激光有限公司 | Laser beam combining method and device |
| CN112753146A (en) * | 2018-09-24 | 2021-05-04 | ams传感器亚洲私人有限公司 | Improved lighting device |
| WO2023142851A1 (en) * | 2022-01-29 | 2023-08-03 | 西安炬光科技股份有限公司 | Laser detection device and control method thereof |
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