CN101303453B - Method for inclined square prism stack to implement strip array semiconductor laser device beam shaping - Google Patents
Method for inclined square prism stack to implement strip array semiconductor laser device beam shaping Download PDFInfo
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Abstract
The invention discloses a method for realizing the light beam reshaping of a striped array semiconductor laser by an oblique square prism pile, which is characterized in that (1) the parameters and parallel plates of the systems of the front group or the rear group of the oblique square prism pile are determined according to the requirements of luminous spot folding; (2) the oblique square prism and the parallel plates needed are processed by the optical flat parts processing technology and then bonded to form an overall reshaping component; (3) the bonded oblique square prism pile is placed in quasi-parallel light which is collimated by a fast axis and a slow axis of the striped array semiconductor laser respectively; the luminous spot is rotates from left to right around a perpendicular of a base of the laser to lead the deflected luminous spot to align with the direction of the fast axis; (4) the emergent luminous spot after the reshaping emerges along the direction in parallel to an optical axis; a focusing lens is added at a proper position of the emergent light and a reshaped light beam is coupled into an optical fiber. Compared with the traditional method, the method for realizing the light beam reshaping of the striped array semiconductor laser by the oblique square prism pile of the invention has the advantages of simple design, compact structure, convenient adjustment, low cost, etc.
Description
Technical field
The present invention relates to a kind of method that adopts the rhombic prism heap to realize strip array semiconductor laser device beam shaping.
Background technology
(Laser Diode LD) has obtained important use in the fields such as pumping, military affairs, printing and printing of medical treatment, materials processing, solid state laser and fiber laser to the high power semiconductor lasers of the fine output of magnetic tape trailer.Wherein, bar array semiconductor laser (LD bar) is a field of studying morely with the optical fiber coupling, bar array semiconductor laser is made up of by a series of luminous zones of periodic arrangement horizontal direction, but be subjected to many-sided restrictions such as technological level, cooling, shaping methods, it can not make the horizontal direction endless, so at present bar array semiconductor laser generally is about 1cm, continuous power output is general＜100W.
The principal feature of semiconductor laser output beam be in the horizontal direction (custom is called " slow axis ") beam divergence angle little (about 8-10 degree, FWHM), luminous zone thick (the about 1cm of bar battle array); Vertical direction (custom is called " fast axle ") beam divergence angle big (about 36-40 degree, FWHM), the luminous zone approaches (about 1 μ m).It will be coupled into the multimode optical fiber of circle symmetry, beam shaping is necessary.
The shaping methods of bar array semiconductor laser is a lot, more with practical value have a ladder catoptron shaping (K.Du, M.Baumann, B.Ehlers, et al, " Fiber-coupling technique with micro step-mirrors for high-powerdiode-laser bars ", OSA TOPS, Vol.10,1997:390-393), prism group catadioptric shaping (Optical couplingsystem for a high-power diode-pumped solid state laser, U S Patent, 6,377,410,2002-04-23), the shaping of microplate edge glass stack (shaper of linear light beam, Chinese invention patent: ZL99124019,2000-05-1) etc.But above-mentioned all there is certain weak point in the battle array shaping methods, such as the ladder catoptron systematic optical axis has been carried out the spatial deflection of twice 90 degree, causes shaping element spatially independently of one another, give to regulate and mechanical parts design is made troubles; The catadioptric shaping mode of prism group is more to the direction deflection of optical axis, the same problem of regulating inconvenience that exists; The microplate edge glass stack is not only made complexity, also needs the aligning gummed precision between the suitable prism, is unfavorable for the reduction of cost.
Summary of the invention
The technical problem to be solved in the present invention is: overcome the deficiencies in the prior art, realize the method for strip array semiconductor laser device beam shaping by a kind of simplicity of design, compact conformation, rhombic prism heap easy to adjust, with low cost.
The technical solution adopted for the present invention to solve the technical problems is: the rhombic prism heap is realized the method for strip array semiconductor laser device beam shaping, adopt a highly integrated rhombic prism shut-down system to reach the purpose of beam shaping, described rhombic prism shut-down system is made up of two groups of rhombic prism heaps, preceding group rhombic prism heap is finished cutting apart of slow-axis direction hot spot, hot spot after back group rhombic prism heap will be cut apart aligns along quick shaft direction, specifically may further comprise the steps:
(1) fold the parameter that requires to determine the rhombic prism shut-down system according to hot spot, establishing the folding number of times of slow axis hot spot is N, and as if N 〉=2, the preceding group of rhombic prism that then needs piled and the number of the rhombic prism that back group rhombic prism is piled is N-1, and parallel flat needs one all the time;
(2) method with optics planar part processing technology processes required rhombic prism and parallel flat, then rhombic prism and parallel flat is glued together operation, constitutes the shaping element of an integral body; Described gummed operation, be specially: at first that each rhombic prism in the preceding group of rhombic prism heap is glued together, the principle of gummed is to be reference center and standard with the parallel flat plane of incidence, the plane of incidence of each rhombic prism in the preceding group rhombic prism heap overlaps with the parallel flat plane of incidence, and the relative symmetrical in the inclination angle of the rhombic prism of parallel flat both sides; Each rhombic prism in the group rhombic prism heap of back and the surface of contact of parallel flat also glue together, after requiring gummed, the exit facet of each rhombic prism during back group rhombic prism is piled overlaps with the exit facet of parallel flat, and requires the plane of incidence of back group rhombic prism to be connected with the exit facet of corresponding preceding group rhombic prism; Group rhombic prism heap, back group rhombic prism heap and parallel flat constitute the shaping element of an integral body before last;
The corner angle of the rhombic prism of group rhombic prism heap and back group rhombic prism heap are 45 ° before described;
The length of described parallel flat satisfies its plane of incidence and overlaps with the plane of incidence of preceding group of prism, exit facet overlaps with the exit facet of back group prism, the height of parallel flat equals the height of adjacent with it preceding group of prism, and the width of parallel flat equals the width of adjacent with it preceding group of prism;
The width of the height back group of rhombic prism equaling to contact with it of group rhombic prism before described, the width of preceding group of rhombic prism then equal the height of back group of rhombic prism contacting with it;
The height of described rhombic prism carries out different designs according to folding times N with the laser instrument actual conditions, to guarantee that wherein hot spot after folding is in quick shaft direction enough distances that staggers mutually, the width requirement envelope of rhombic prism is lived the light beam of slow-axis direction, the length of rhombic prism and highly equal;
(3) will glue together good rhombic prism stacks in the quasi-parallel light after the fast and slow axis of bar array semiconductor laser collimates respectively and the hot spot after the slow left rotation and right rotation of the vertical line of laser base makes deflection aligns along quick shaft direction;
(4) the outgoing hot spot after the shaping will be along the outgoing of parallel optical axis direction.Add focus lamp in the emergent light appropriate location, the light beam coupling after the shaping is advanced optical fiber.
The advantage that the present invention is compared with prior art had is as follows:
1, the present invention adopts comparatively common, the 45 degree rhombic prisms that are easy to process and parallel flat as shaping element, is very beneficial for the reduction of cost and the popularization of method;
2, the present invention heaps rhombic prism becomes an orthopedic systems, be discrete component with the shaping element of existing the whole bag of tricks, and each element all needs to carry out separately accurate adjusting aligning to be compared, and greatly reduces and regulates the difficulty of aiming at, and has improved the work efficiency of laser instrument assembling;
3, the front and back group rhombic prism zero distance of shaping element of the present invention is glued together, the operating distance of shaping is reduced to minimum, helps the raising of shaping efficient and system performance stability, and makes structure more compact;
4, shaping element of the present invention does not change the systematic optical axis direction, and shaping element can directly drop on the laser base, need not complex mechanical structure and cooperates with optical element, has reduced system cost.
Description of drawings
Fig. 1 is the schematic diagram of the bar array semiconductor laser output beam described of the present invention;
Fig. 2 a is a preceding deviation synoptic diagram of organizing rhombic prism to hot spot among the present invention; Fig. 2 b is that back group rhombic prism heap is to the synoptic diagram of the light beam behind the deviation along the quick shaft direction alignment;
Fig. 3 is the construction profile of rhombic prism among the present invention, has marked the effect of deflection of light;
Fig. 4 is the original scale space multistory structural drawing of the rhombic prism heap shaping bar array semiconductor laser of the embodiment of the invention 1, is finished by ZEMAX-EE optics software;
Fig. 5 is the embodiment of the invention 1, utilizes the xsect hot spot distribution plan of ZEMAX-EE optics software emulation that wherein Fig. 5 a is the hot spot distribution plan before fast and slow axis collimation back, the shaping; Fig. 5 b is through the hot spot distribution plan after the shaping of rhombic prism heap; Fig. 5 c is that the hot spot after the shaping is focused the hot spot figure after mirror focuses on;
Fig. 6 is the original scale space multistory structural drawing of the rhombic prism heap shaping bar array semiconductor laser of the embodiment of the invention 2, is finished by ZEMAX-EE optics software;
Fig. 7 is the embodiment of the invention 2, utilizes the xsect hot spot distribution plan of ZEMAX-EE optics software emulation that wherein Fig. 7 a is through the hot spot distribution plan after the shaping of rhombic prism heap; Fig. 7 b is that the hot spot after the shaping is focused the hot spot figure after mirror focuses on;
Among the figure: 1 is bar array semiconductor laser, 2 is the single luminous zone of bar array semiconductor laser, 3 is the optical axis cross section of rhombic prism, 4 is fast axis collimation microtrabeculae face lens, 5 are slow axis collimation microtrabeculae face lens array, and 6 is the preceding group of rhombic prism of embodiment 1, and 7 is the back group of rhombic prism of embodiment 1,8 is the parallel flat of embodiment 1, and 9 is the condenser lens of embodiment 1; 10 is the laser base of embodiment 1 and 2,11 is preceding group first rhombic prism of embodiment 2,12 is preceding group second rhombic prism of embodiment 2,13 is back group first rhombic prism of embodiment 2,14 is back group second rhombic prism of embodiment 2,15 is the parallel flat of embodiment 2, and 16 is the condenser lens of embodiment 2.
Embodiment
Introduce the present invention in detail below in conjunction with the drawings and the specific embodiments.
Bar array semiconductor laser is normally rearranged at regular intervals by several single luminous zone 2 along continuous straight runs; The thickness of single luminous zone is about 1 μ m, and length is about (100-200) μ m, and the luminous zone is about 500 μ m at interval, and the quantity of single luminous zone 2 is generally 19, so the length of bar array semiconductor laser 1 generally is about 10mm.Because it is different with the light beam tied mechanism that is parallel to p-n junction direction (horizontal direction) perpendicular to p-n junction direction (vertical direction), the light that semiconductor laser sends is astigmatism light, and the angle of divergence with vertical direction approximately is respectively (8-10) ° and (36-40) ° in the horizontal direction; Its structural principle has marked the representative value of the angle of divergence as shown in Figure 1 among the figure.
Because the astigmatism of semiconductor laser outgoing beam, it is seriously unbalanced with the beam quality of vertical direction in the horizontal direction, must carry out just being coupled into fibre after the shaping, otherwise coupling efficiency is very low; The present invention utilizes the skew effect of rhombic prism group to incident beam, can realize the shaping of noise spectra of semiconductor lasers outgoing beam; Shown in Fig. 2 a, the outgoing beam of bar array semiconductor laser 1 becomes a strip hot spot behind collimation, be divided into two light beams of dislocation after preceding group of rhombic prism shaping, vertically aligns after the rearrangement of back group rhombic prism, shown in Fig. 2 b.Light beam after shaping hot spot in the horizontal direction dwindles, and enlarges at the vertical direction hot spot, helps the equilibrium of beam quality on the both direction.Fig. 3 is the beam deflection synoptic diagram of rhombic prism, among the figure incident beam through highly be D rhombic prism after twice total reflection along former direction outgoing, and at y direction of principal axis offset height D.
Present embodiment is realized the shaping process that bar array semiconductor laser light beam and 800 μ m core diameters, 0.37 numerical aperture fiber are coupled by method of the present invention, and its design process is as follows:
(1) fast and slow axis of bar array semiconductor laser 1 collimation back slow-axis direction spot size is approximately 10mm, utilizes rhombic prism that slow axis hot spot deviation number of times is N=2 time, aligns along quick shaft direction; This orthopedic systems needs before a parallel flat 8 and one group rhombic prism 7 behind group rhombic prism 6 and, as shown in Figure 4; At near the optical maser wavelength the visible light (as 808nm), can select cheap K9 glass to make parallel flat 8, preceding group of rhombic prism 6 and back group rhombic prism 7.The width of parallel flat 8 is chosen as 6mm in this example, and for the hot spot that the guarantees quick shaft direction compactness of trying one's best is unlikely to overlapping again, the distance of selecting these direction two spot center is 1mm, so the height of parallel flat 8 is 1mm.Corresponding with parallel flat 8: the height of preceding group of rhombic prism 6 is 1mm, and width is 6mm, and length is 1mm, and the height of back group rhombic prism 7 is 6mm, and width is 1mm, and length is 6mm.So the length of parallel flat 8 is (1+6) mm=7mm; The corner angle of group rhombic prism 6 and back group rhombic prism 7 are 45 ° wherein, and reflecting surface need not to plate reflectance coating.
(2) parallel flat 8, preceding group of rhombic prism 6 and back group rhombic prism 7 can be finished with optics planar part processing technology.Will glue together operation after processing, at first that the surface of contact of preceding group of rhombic prism 6 and parallel flat 8 is glued together as shown in Figure 4, the plane of incidence of group rhombic prism 6 and parallel flat 8 is positioned at same plane before noting during gummed guaranteeing; Then that the surface of contact of back group rhombic prism 7 and parallel flat 8 is glued together, notice during gummed that the exit facet that guarantees back group rhombic prism 7 and parallel flat 8 is positioned at same plane, and the exit facet of preceding group of rhombic prism 6 overlaps with the plane of incidence of back group rhombic prism 7.Finish the shaping element of just having formed an integral body after gummed is operated.
(3) according to the rule of semiconductor laser shaping, the fast and slow axis direction needs to collimate respectively with fast axis collimation lenticule 4 shown in Figure 4 and slow axis collimation microlens 5 in advance, obtain quasi-parallel light, and then add the shaping device that constitutes by behind preceding group of rhombic prism 6, back group rhombic prism 7 and parallel flat 8 gummeds.Shaping element is placed on the laser base 10, about slight rotation, hot spot aligns as far as possible after making shaping, select the focus lamp 9 of aperture 6.5mm and focal length 15mm that light beam after the shaping is focused in the optical fiber then, promptly finish the shaping of 800 μ m/0.37NA bar array semiconductor lasers 1 and the work of optical fiber coupling output.
Fig. 4 is the space multistory structural drawing of the rhombic prism heap shaping bar array semiconductor laser of the embodiment of the invention 1, after light beam process fast axis collimation lenticule 4 that bar array semiconductor laser is 1 and slow axis collimation microlens 5 collimate respectively, enter by in the shaping device that constitutes behind preceding group of rhombic prism 6, back group rhombic prism 7 and parallel flat 8 gummeds, the light beam after the shaping focuses in the optical fiber through focus lamp 9.Fig. 4 is finished by ZEMAX-EE optics software.
Among the embodiment 1, before the deflection, after the deflection and the xsect hot spot after focusing on as shown in Figure 5.From Fig. 5 (a) as can be seen, be rearranged in quick shaft direction after the elongated hot spot of slow-axis direction is split into two sections, the hot spot after the focusing is shown in Fig. 5 (b), and most of as can be seen concentration of energy is in 800 μ m circles.
This example of above-mentioned enforcement is not the two folding shapings that this method can only be carried out hot spot, because the design of prism group has bigger dirigibility among the present invention, in order to further specify the effect that realizes strip array semiconductor laser device beam shaping with the rhombic prism heap, embodiment 2 has described the shaping process that realizes the coupling of 400 μ m/0.37NA optical fiber by the above-mentioned same bar array semiconductor laser of method design of the present invention.
(1) bar array semiconductor laser fast and slow axis collimation back slow-axis direction spot size is approximately 12mm in the present embodiment, utilizes the rhombic prism heap with slow axis hot spot deviation times N=3 times, aligns along quick shaft direction; This orthopedic systems needs a parallel flat 15 and is piled by the reflecting prism that group rhombic prism behind group rhombic prism before two and two is formed; As shown in Figure 6, before the group rhombic prism is respectively before two behind 12, two of group first rhombic prism 11 and preceding group second rhombic prisms group rhombic prism be respectively back group first rhombic prism 13 and back group second rhombic prism 14; Similar with embodiment 1, parallel flat 15, preceding group first rhombic prism 11 and preceding group second rhombic prism 12, back group first rhombic prism 13 and back group second rhombic prism 14 all adopt K9 glass to make; Parallel flat 15 width are chosen as 4mm in this example, and for the compactness as far as possible that guarantees the quick shaft direction hot spot is unlikely to overlapping again, the distance of selecting these direction two spot center is 1mm, so parallel flat 15 highly is 1mm; Corresponding with parallel flat 15: the height of preceding group first rhombic prism 11 and preceding group second rhombic prism 12 is 1mm, width is 4mm, and length is 1mm, and the height of back group first rhombic prism 13 and back group second rhombic prism 14 is 4mm, width is 1mm, and length is 4mm.So parallel flat 15 length are (1+4) mm=5mm; The corner angle of group first rhombic prism 11, preceding group second rhombic prism 12 and back group first rhombic prism 13, back group second rhombic prism 14 are 45 ° wherein, and reflecting surface need not to plate reflectance coating.
(2) parallel flat 15, preceding group first rhombic prism 11 and preceding group second rhombic prism 12, back group first rhombic prism 13 and back group second rhombic prism 14 can be finished with optics planar part processing technology.To glue together operation after processing, as shown in Figure 6, at first respectively preceding group first rhombic prism 11, preceding group second rhombic prism 12 are glued together with the surface of contact of parallel flat 15, group first rhombic prism 11 before noting during gummed guaranteeing, preceding group second rhombic prism 12 are positioned at same plane with the plane of incidence of parallel flat 15.The gummed direction of group first rhombic prism 11 and preceding group second rhombic prism 12 before noting in addition, as shown in Figure 6, with the laser base face is reference planes, preceding group first rhombic prism 11 makes incident beam translation upward, preceding group second rhombic prism 12 makes incident beam translation downwards, and both can not be along same translation direction during gummed.After preceding group gummed is finished, the surface of contact of back group first rhombic prism 13, back group second rhombic prism 14 and parallel flat 15 is glued together, to note direction equally during gummed, as shown in Figure 6, the exit facet of group first rhombic prism 11 is connected, makes the exit facet of preceding group second rhombic prism 12 to be connected with the plane of incidence of back group second rhombic prism 14 with the plane of incidence of back group first rhombic prism 13 before making, and group first rhombic prism 13, back group second rhombic prism 14 are positioned at same plane with the exit facet of parallel flat 15 after noting simultaneously making.Finish the shaping element of just having formed an integral body after gummed is operated.
(3) according to the rule of semiconductor laser shaping, the fast and slow axis direction needs to collimate respectively with fast axis collimation lenticule 4 shown in Figure 6 and slow axis collimation microlens 5 in advance, obtains quasi-parallel light, and then adds the shaping device that obtains in the step (2).Shaping element is placed on the laser base, about slight rotation, hot spot aligns as far as possible after making shaping, select the focus lamp 16 of aperture 5mm and focal length 7.5mm that light beam after the shaping is focused in the optical fiber then, promptly finish the work of 400 μ m/0.37NA bar array semiconductor laser 1 shapings and optical fiber coupling output.
Fig. 6 is the space multistory structural drawing of the rhombic prism heap shaping bar array semiconductor laser of the embodiment of the invention 2, after light beam process fast axis collimation lenticule 4 that bar array semiconductor laser is 1 and slow axis collimation microlens 5 collimate respectively, enter by preceding group first rhombic prism 11 and preceding group second rhombic prism 12, back group first rhombic prism 13 and back and organize in the shaping device that constitutes behind second rhombic prism 14 and parallel flat 15 gummeds, the light beam after the shaping focuses in the optical fiber through focus lamp 16.Fig. 6 is finished by ZEMAX-EE optics software.
Among the embodiment 2, the xsect hot spot after deflection and the focusing as shown in Figure 7.From Fig. 7 a as can be seen, be rearranged in quick shaft direction after the elongated hot spot of slow-axis direction is split into 3 sections, the distribution after the hot spot line focus mirror after the shaping focuses on can find out that most of concentration of energy is in 400 μ m circles shown in Fig. 7 b.
Claims (3)
1. the rhombic prism heap is realized the method for strip array semiconductor laser device beam shaping, its feature exists: adopt a highly integrated rhombic prism shut-down system to reach the purpose of beam shaping, described rhombic prism shut-down system is made up of two groups of rhombic prism heaps, group rhombic prism heap is finished cutting apart of slow-axis direction hot spot wherein, hot spot after back group rhombic prism heap will be cut apart aligns along quick shaft direction, specifically comprises the following steps:
(1) according to the folding parameter that requires to determine the rhombic prism shut-down system of hot spot, establishing the folding number of times of slow axis hot spot is N, and N 〉=2, and the number of the preceding group of rhombic prism heap that then needs and the rhombic prism of back group rhombic prism heap is N-1, and parallel flat needs one all the time;
(2) process required rhombic prism and parallel flat with optics planar part processing technology, then rhombic prism and parallel flat are glued together operation, constitute the shaping element of an integral body;
Described gummed operation, be specially: at first that each rhombic prism in the preceding group of rhombic prism heap is glued together, the principle of gummed is to be reference center and standard with the parallel flat plane of incidence, the plane of incidence of each rhombic prism in the preceding group rhombic prism heap overlaps with the parallel flat plane of incidence, and the relative symmetrical in the inclination angle of the rhombic prism of parallel flat both sides; Each rhombic prism in the group rhombic prism heap of back and the surface of contact of parallel flat also glue together, after requiring gummed, the exit facet of each rhombic prism during back group rhombic prism is piled overlaps with the exit facet of parallel flat, and requires the plane of incidence of back group rhombic prism to be connected with the exit facet of corresponding preceding group rhombic prism; Group rhombic prism heap, back group rhombic prism heap and parallel flat constitute the shaping element of an integral body before last;
The corner angle of the rhombic prism of group rhombic prism heap and back group rhombic prism heap are 45 ° before described;
The length of described parallel flat satisfies its plane of incidence and overlaps with the plane of incidence of preceding group of prism, exit facet overlaps with the exit facet of back group prism, the height of parallel flat equals the height of adjacent with it preceding group of prism, and the width of parallel flat equals the width of adjacent with it preceding group of prism;
The width of the height back group of rhombic prism equaling to contact with it of group rhombic prism before described, the width of preceding group of rhombic prism then equal the height of back group of rhombic prism contacting with it;
The height of described rhombic prism carries out different designs according to folding times N with the laser instrument actual conditions, to guarantee that wherein hot spot after folding is in quick shaft direction enough distances that staggers mutually, the width requirement envelope of rhombic prism is lived the light beam of slow-axis direction, the length of rhombic prism and highly equal;
(3) will glue together good rhombic prism and stack in the quasi-parallel light after the fast and slow axis of bar array semiconductor laser collimates respectively, and the hot spot after the slow left rotation and right rotation of the vertical line of laser base makes deflection aligns along quick shaft direction;
(4) the outgoing hot spot after the shaping will add focus lamp in the emergent light appropriate location along the direction outgoing that is parallel to optical axis, and the light beam coupling after the shaping is advanced optical fiber.
2. rhombic prism heap according to claim 1 is realized the method for strip array semiconductor laser device beam shaping, and its feature exists: the reflecting surface of the rhombic prism of group rhombic prism heap and back group rhombic prism heap need not to plate reflectance coating before described.
3. rhombic prism heap according to claim 1 is realized the method for strip array semiconductor laser device beam shaping, and its feature exists: described rhombic prism and parallel flat are selected the optical material of transmitance height, stable performance, cheapness according to optical maser wavelength.
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| KR20200033387A (en) * | 2018-09-20 | 2020-03-30 | 삼성전자주식회사 | Optical rearrangement device, system including the same and method of providing the same |
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