CN203909406U - Polarization beam-combining device of semiconductor laser - Google Patents
Polarization beam-combining device of semiconductor laser Download PDFInfo
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- CN203909406U CN203909406U CN201420230979.7U CN201420230979U CN203909406U CN 203909406 U CN203909406 U CN 203909406U CN 201420230979 U CN201420230979 U CN 201420230979U CN 203909406 U CN203909406 U CN 203909406U
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- 230000010287 polarization Effects 0.000 title claims abstract description 44
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 230000003287 optical effect Effects 0.000 claims abstract description 16
- 239000013307 optical fiber Substances 0.000 claims abstract description 12
- 238000010168 coupling process Methods 0.000 claims description 23
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- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000007598 dipping method Methods 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims description 2
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Abstract
The utility model relates to a polarization beam-combining device of a semiconductor laser. A group of laser diodes in the device are horizontally fixed on a base plate, and another group of laser diodes are vertically fixed on the base plate. When the device operates, the two groups of laser diodes generate light in vertical polarization directions. The two groups of light are respectively collimated by fast axis collimating lenses FACs and slow axis collimating lenses SACs, and then the light beams are changed into parallel beams. After reflecting by a reflector, space combined beams are formed. Finally, the beams form polarization combined beams through a polarization beam-combining prism, and the polarization combined beams pass through a collimating lens, then focus, enter an optical fiber and finally are output. The device enables the semiconductor laser to be high in power and high in brightness. A half-wave plate is prevented from being used. The half-wave plate is high in cost and strict in precision, and is easy to cause loss. The group of semiconductor laser diodes arranged in the vertical direction has the same optical path, providing guarantee for shaping of subsequent output light beams. In addition, the two groups of semiconductor laser diodes arranged horizontally and vertically can form circularly symmetric light spots.
Description
Technical field
The utility model provides a kind of polarization coupling device of semiconductor laser, belongs to semiconductor laser field.
Background technology
Semiconductor laser, owing to having the many merits such as volume is little, lightweight, efficiency is high, is widely used in the various fields such as industry, military affairs, medical treatment, communication.Due to the restriction of self quantum well waveguiding structure, the output beam quality of semiconductor laser and CO
2the conventional laser such as laser instrument, solid YAG laser instrument are compared poor, have hindered the expansion of its application.In recent years, along with the development of epitaxial growth of semiconductor material growing technology, semiconductor laser waveguiding structure optimisation technique, passivating cavity surface technology, high stability encapsulation technology, high efficiency and heat radiation technology, particularly at the demand driving of direct semiconductor laser industrial process applications and high power fiber laser pumping source have high-power, the semiconductor laser develop rapidly of high light beam quality.
Because the power of the semiconductor laser of single-chip can not meet diversified demand far away, the bundle that closes of multiple chip lasers is inevitable, this power that just can make semiconductor laser lifting at double.At present, the sharp combiner of multiple chips is the most directly that bundle is closed in space.Due to quick shaft direction good beam quality, can be shaped to width and only have the hot spot of 200 μ m-300 μ m, therefore chipset dress can be closed to bundle at various height.
And to realize the Laser Processing of high-quality, wide region, laser instrument must meet high power and high light beam quality simultaneously.Because semiconductor laser diode output light has good linear polarization characteristic, degree of polarization can, in the scope of 95%-98%, can adopt polarization coupling, can improve like this beam quality of semiconductor laser.General polarization coupling can be by the two-way semiconductor laser for being coupled, and wherein a road placement half-wave plate changes its polarization state, S state polarized light is become to P state polarized light, or incide on polarization beam combiner after P state polarized light is become to S state polarized light.But half-wave plate cost is high, precision is strict, be easy to cause loss.And in high-power applications, also can produce a large amount of heat, cause integrity problem.
Summary of the invention
The problem that the purpose of this utility model exists in order to overcome above-mentioned prior art, and provide a kind of polarization coupling device of semiconductor laser, the utility model utilizes the polarization characteristic of semiconductor laser, laser diode is divided into two groups, one group of level fixes, one group vertically fixing, obtain respectively horizontal polarization state and vertical polarization state, then form polarization coupling, realize high power, the semiconductor laser of high light beam quality.
The purpose of this utility model is achieved through the following technical solutions.
A kind of polarization of semiconductor laser beam merging apparatus, comprises base plate, some laser diodes, fast axis collimation mirror FAC, slow axis collimating mirror SAC, catoptron, polarization coupling prism, collimation lens, optical fiber; Some laser diodes, fast axis collimation mirror FAC, slow axis collimating mirror SAC, catoptron, polarization coupling prism, collimation lens, optical fiber are separately fixed at base plate, and after all light beams from catoptron reflection all enter collimation lens after polarization coupling prism, focus on optical fiber and export, it is characterized in that:
Some laser diodes are divided into two groups, and one group horizontal, and height of formation is poor in the vertical direction, and bundle is closed in space; One group of homeotropic alignment, front-back staggered;
Each laser diode has corresponding fast axis collimation mirror FAC, a slow axis collimating mirror SAC and a catoptron; Laser diode fast axis collimation mirror FAC, slow axis collimating mirror SAC and a catoptron corresponding with it is all fixed point-blank;
The light-emitting area of the corresponding laser diode of the optical axis alignment of fast axis collimation mirror FAC;
The light-emitting area of the corresponding laser diode of the optical axis alignment of slow axis collimating mirror SAC, and with the optical axis coincidence of fast axis collimation mirror FAC;
Catoptron is vertical with surface level to be placed, and is 45 ° with the optical axis included angle of corresponding fast axis collimation mirror FAC, slow axis collimating mirror SAC.
Two groups of relative vertical arrangement of laser diode; Physically obtain two groups of polarized lights that polarization direction is vertical.
One group of laser diode front-back staggered of homeotropic alignment, by regular intervals, and each catoptron when assembling, and the reflected light of a rear catoptron passes through from the top of previous catoptron, forms space and closes bundle, and laser arrives collimating apparatus bright dipping equivalent optical path through catoptron.
All elements are all fixed on base plate with scolder or glue.
The coupling process of polarization of semiconductor laser beam merging apparatus, is characterized in that carrying out according to the following steps:
(1), the light that sends of each laser diode after the collimation of fast axis collimation mirror FAC, light is becoming directional light perpendicular to chip direction;
(2) light, after fast axis collimation mirror FAC collimation arrives slow axis collimating mirror SAC, and after the shaping of slow axis collimating mirror SAC, light is becoming directional light along being parallel to chip direction;
(3), successively through fast axis collimation mirror FAC, slow axis collimating mirror SAC collimation after light after the reflection of catoptron, optical path-deflecting 90 °;
(4), one group of laser diode level is fixed, and there is difference in height in vertical direction, therefore produce the different light beam of multiple height, after fast axis collimation mirror FAC, slow axis collimating mirror SAC separately, produce the different parallel beam of height, after the reflection of level crossing, arrive polarization coupling prism;
(5), one group of laser diode is vertically fixing, when each catoptron assembling, and the reflected light of a rear catoptron passes through from the top of previous catoptron, forms space and closes bundle, then arrives polarization coupling prism;
(6), one group of laser, focuses on optical fiber after collimation lens by polarization coupling prism transmission through polarization coupling prismatic reflection, one group of laser-transmitting.
The utility model contrast prior art has following innovative point:
The utility model utilizes two groups of laser diode levels, vertical both direction assembling, obtains mutually orthogonal polarized light, closes bundle by polarization coupling prism, obtains the laser of high brightness.
The utility model is realized the semiconductor laser of high power, high brightness, has avoided use half-wave plate, and half-wave plate cost is high, precision is strict, is easy to cause loss.One group of semiconductor laser diode that in the utility model, vertical direction is arranged, can accomplish that light path is identical, for follow-up output beam shaping provides safeguard.In addition, level, vertical two groups of semiconductor laser diodes of arranging, can obtain the symmetrical hot spot of circle.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model;
In figure: 1-laser diode, 2-fast axis collimation lens FAC, 3-slow axis collimation lens SAC, 4-catoptron, 5-catoptron, 6-polarization coupling prism, 7-collimating apparatus.
Embodiment
Below in conjunction with drawings and Examples, the utility model is described in further detail.
As shown in Figure 1, polarization of semiconductor laser beam merging apparatus of the present utility model, comprises base plate, 18 laser diodes 1, fast axis collimation mirror FAC, slow axis collimating mirror SAC, catoptron (4,5), polarization coupling prism 6, collimation lens 7, optical fiber; 18 laser diodes 1, fast axis collimation mirror FAC, slow axis collimating mirror SAC, catoptron (4,5), polarization coupling prism 6, collimation lens 7, optical fiber are separately fixed at base plate, and all light beams from catoptron reflection all enter and focus on optical fiber after collimation lens 7 and export after polarization coupling prism 6, it is characterized in that:
18 laser diodes are divided into two groups, and first group horizontal, and height of formation is poor in the vertical direction, and bundle is closed in space; Second group of homeotropic alignment, front-back staggered;
Each laser diode 1 has corresponding fast axis collimation mirror FAC, a slow axis collimating mirror SAC and a catoptron; Laser diode fast axis collimation mirror FAC, slow axis collimating mirror SAC and a catoptron corresponding with it is all fixed point-blank;
The light-emitting area of the corresponding laser diode of the optical axis alignment of fast axis collimation mirror FAC;
The light-emitting area of the corresponding laser diode of the optical axis alignment of slow axis collimating mirror SAC, and with the optical axis coincidence of fast axis collimation mirror FAC;
Catoptron is vertical with surface level to be placed, and is 45 ° with the optical axis included angle of corresponding fast axis collimation mirror FAC, slow axis collimating mirror SAC.
First group, the left side is the laser diode that level is arranged, but perpendicular to having difference in height in base direction, is once arranged by step; The right second group be the laser diode being vertically fixed on base plate.
Before each laser diode, first can assemble a fast axis collimation mirror FAC2, light laser diode 1 being sent on perpendicular to chip direction carries out shaping, and the light beam after shaping is becoming directional light perpendicular to chip direction.
Slow axis collimating mirror SAC3 is also post lens, carries out shaping at the light being parallel in chip direction after slow axis collimating mirror SAC3 collimation, and the light beam after shaping becomes directional light being parallel to chip direction.
There is difference in height perpendicular to base direction in first group of catoptron 4 corresponding to laser diode, make light that a high step laser diode sends after catoptron from the top process of catoptron above; Stagger in second group of catoptron 5Y direction front and back corresponding to laser diode, the laser of rear catoptron reflection, from previous catoptron top process, forms space and closes bundle.
Two groups of directional lights, one group reflects through polarization coupling prism 6, and one group through 6 transmissions of polarization coupling prism, are combined into light beam, arrive after collimating apparatus 7 and focus on optical fiber and export.
Claims (4)
1. a polarization of semiconductor laser beam merging apparatus, comprises base plate, some laser diodes, fast axis collimation mirror FAC, slow axis collimating mirror SAC, catoptron, polarization coupling prism, collimation lens, optical fiber; Some laser diodes, fast axis collimation mirror FAC, slow axis collimating mirror SAC, catoptron, polarization coupling prism, collimation lens, optical fiber are separately fixed at base plate, and after all light beams from catoptron reflection all enter collimation lens after polarization coupling prism, focus on optical fiber and export, it is characterized in that:
Some laser diodes are divided into two groups, and one group horizontal, and height of formation is poor in the vertical direction, and bundle is closed in space; One group of homeotropic alignment, front-back staggered;
Each laser diode has corresponding fast axis collimation mirror FAC, a slow axis collimating mirror SAC and a catoptron; Laser diode fast axis collimation mirror FAC, slow axis collimating mirror SAC and a catoptron corresponding with it is all fixed point-blank;
The light-emitting area of the corresponding laser diode of the optical axis alignment of fast axis collimation mirror FAC;
The light-emitting area of the corresponding laser diode of the optical axis alignment of slow axis collimating mirror SAC, and with the optical axis coincidence of fast axis collimation mirror FAC;
Catoptron is vertical with surface level to be placed, and is 45 ° with the optical axis included angle of corresponding fast axis collimation mirror FAC, slow axis collimating mirror SAC.
2. polarization of semiconductor laser beam merging apparatus according to claim 1, is characterized in that: two groups of relative vertical arrangement of laser diode; Physically obtain two groups of polarized lights that polarization direction is vertical.
3. polarization of semiconductor laser beam merging apparatus device according to claim 1, it is characterized in that: one group of laser diode front-back staggered of homeotropic alignment, by regular intervals, and when each catoptron assembling, and the reflected light of a rear catoptron passes through from the top of previous catoptron, form space and close bundle, laser arrives collimating apparatus bright dipping equivalent optical path through catoptron.
4. polarization of semiconductor laser beam merging apparatus according to claim 1, is characterized in that: all elements are all fixed on base plate with scolder or glue.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420230979.7U CN203909406U (en) | 2014-05-07 | 2014-05-07 | Polarization beam-combining device of semiconductor laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420230979.7U CN203909406U (en) | 2014-05-07 | 2014-05-07 | Polarization beam-combining device of semiconductor laser |
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| CN203909406U true CN203909406U (en) | 2014-10-29 |
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| CN201420230979.7U Expired - Lifetime CN203909406U (en) | 2014-05-07 | 2014-05-07 | Polarization beam-combining device of semiconductor laser |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104007558A (en) * | 2014-05-07 | 2014-08-27 | 武汉锐科光纤激光器技术有限责任公司 | Semiconductor laser polarization beam combining device and coupling method |
| CN105652452A (en) * | 2016-01-26 | 2016-06-08 | 北京凯普林光电科技股份有限公司 | Space beam combination device and system |
| TWI667506B (en) * | 2017-10-17 | 2019-08-01 | 南韓商Ｅｏ科技股份有限公司 | Light source apparatus having high output power |
| CN113270790A (en) * | 2021-05-18 | 2021-08-17 | 中国科学院半导体研究所 | Hectowatt-level green laser system and laser device using same |
| CN113314953A (en) * | 2021-05-20 | 2021-08-27 | 巴可伟视(北京)电子有限公司 | Self-focusing semiconductor laser light source system |
-
2014
- 2014-05-07 CN CN201420230979.7U patent/CN203909406U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104007558A (en) * | 2014-05-07 | 2014-08-27 | 武汉锐科光纤激光器技术有限责任公司 | Semiconductor laser polarization beam combining device and coupling method |
| CN104007558B (en) * | 2014-05-07 | 2016-11-09 | 武汉锐科光纤激光器技术有限责任公司 | A kind of polarization of semiconductor laser beam merging apparatus and coupling process |
| CN105652452A (en) * | 2016-01-26 | 2016-06-08 | 北京凯普林光电科技股份有限公司 | Space beam combination device and system |
| TWI667506B (en) * | 2017-10-17 | 2019-08-01 | 南韓商Ｅｏ科技股份有限公司 | Light source apparatus having high output power |
| CN113270790A (en) * | 2021-05-18 | 2021-08-17 | 中国科学院半导体研究所 | Hectowatt-level green laser system and laser device using same |
| CN113314953A (en) * | 2021-05-20 | 2021-08-27 | 巴可伟视(北京)电子有限公司 | Self-focusing semiconductor laser light source system |
| CN113314953B (en) * | 2021-05-20 | 2022-07-01 | 巴可伟视(北京)电子有限公司 | Self-focusing semiconductor laser light source system |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP03 | Change of name, title or address |
Address after: 430074 East Lake science and technology zone, Wuhan province high tech Avenue, No. 999, the future of science and technology city of the city of Hubei Patentee after: WUHAN RAYCUS FIBER LASER TECHNOLOGIES Co.,Ltd. Address before: 430223 East Lake New Technology Development Zone, Huazhong University of Science and Technology, Wuhan science and technology park innovation base, building No. 10, building No. Patentee before: WUHAN RAYCUS FIBER LASER TECHNOLOGIES Co.,Ltd. |
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| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141029 |