CN103944067B - A kind of high-power semiconductor laser closes beam system - Google Patents
A kind of high-power semiconductor laser closes beam system Download PDFInfo
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- CN103944067B CN103944067B CN201410195845.0A CN201410195845A CN103944067B CN 103944067 B CN103944067 B CN 103944067B CN 201410195845 A CN201410195845 A CN 201410195845A CN 103944067 B CN103944067 B CN 103944067B
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Abstract
The present invention provides a kind of high-power semiconductor lasers to close beam system, can obtain that uniformity is good, the laser light source of single polarization characteristic.The high-power semiconductor laser closes beam system, including semiconductor laser stacks, collimation lens set and the beam merging apparatus set gradually along light path；The beam merging apparatus includes a parallel six face prism and prism arrangement, there are two adjacent sides towards semiconductor laser stacks light direction for parallel six face prism, the top half of semiconductor laser stacks is corresponded respectively in short transverse, the latter half, so that the laser beam that semiconductor laser stacks top half is sent passes sequentially through prism arrangement and is emitted with after the prism of parallel six face along former optical axis, the laser beam that semiconductor laser stacks the latter half is sent passes through the lower face of parallel six face prism successively, upper surface carries out being mutually parallel to form plug hole conjunction beam with the laser beam of semiconductor laser stacks top half outgoing after being totally reflected twice.
Description
Technical field
The invention belongs to laser application fields, and in particular to a kind of high-power semiconductor laser closes beam system.
Background technology
Semiconductor laser has the advantages that small, light-weight, reliability is high, service life is long, low in energy consumption, at present
Through being widely used in the every field of national economy, but the popularization and application of current semiconductor laser are subject to its beam quality
It restricts, so the beam quality, brightness and the power that improve semiconductor laser are instantly important research direction.Swash combiner skill
Art is quickly grown in recent years, it, which is one, improves beam quality, the process for increasing output power, improving power density.Laser closes
Beam technology is being laser machined and is being widely used in high-power optical-fiber coupling product.
Currently used sharp combiner method has polarization coupling, and beam is closed in wavelength coupling and space.Common polarization coupling dress
Put and be made of 1/2 slide and polarization splitting prism (PBS), a part of laser by 1/2 slide by polarization state from TE become TM (or
TM becomes TE), then carry out conjunction beam with another part laser.Since the laser light source degree of polarization of semiconductor laser is about 90%,
According to polarization coupling, optical energy loss is larger, is only applicable to the conjunction beam of fast axis direction, and output light is mixed polarized light, it is impossible to
Again polarization coupling is carried out with other light sources；When semiconductor laser is used to fold battle array as light source, output facula still retain bar with
Luminous dead zone between bar, the uniformity are poor.Wavelength coupling is that the laser of different wave length carries out conjunction beam, but is requiring laser
Occasion with single wavelength can not be applied, it is made to have limitation in application field.
The content of the invention
For overcome the deficiencies in the prior art, the present invention provides a kind of high-power semiconductor lasers to close beam system, can
Uniformity is good to obtain, the laser light source of single polarization characteristic.Scheme is as follows：
The high-power semiconductor laser close beam system, including set gradually along light path semiconductor laser stacks, standard
Straight lens group and beam merging apparatus, the semiconductor laser stacks are made of several semiconductor laser units stacking, according to
Stack height is divided into top half and the latter half；The beam merging apparatus includes a parallel six face prism and prism arrangement,
There are two adjacent sides towards semiconductor laser stacks light direction for parallel six face prism, are corresponded respectively in short transverse
The top half of the semiconductor laser stacks, the latter half, wherein the side of parallel six faces prism the latter half with it is described
Light direction is vertical；The prism arrangement includes several small prisms, and small number of prisms is the laser of semiconductor laser stacks
The half of element number, the side of the light-emitting surface of small prism with parallel six faces prism top half fit closely, and incidence surface is equal
Vertical with the light direction, several positions of small prism in the height direction correspond respectively to semiconductor laser stacks
Each semiconductor laser unit of top half so that the laser beam that semiconductor laser stacks top half is sent leads to successively
It crosses prism arrangement to be emitted along former optical axis with after the prism of parallel six face, the laser beam that semiconductor laser stacks the latter half is sent
Successively by the lower face of parallel six face prism, upper surface carry out twice be totally reflected after with semiconductor laser stacks top half
The laser beam of outgoing is mutually parallel to form plug hole conjunction beam.
Based on above-mentioned basic scheme, the present invention also does following optimization and limits and improve：
The acute angle of the parallel six face two neighboring side of prism
If semiconductor laser stacks are made of even number semiconductor laser element, the thickness t of parallel six face prism
Meet with width L：
If semiconductor laser stacks are made of odd number semiconductor laser element, the thickness t of parallel six face prism
Meet with width：
Wherein, m is semiconductor laser element quantity；Spacing of the w between two neighboring semiconductor laser element；t
For the thickness of parallel six face prism；L is the width of parallel six face prism, and n is the refractive index of parallel six face prism material.
The preferred prism of small prism in above-mentioned prism arrangement, each small prism are spaced at equal intervals, and meet following relation：
Wherein d is the beam diameter after single semiconductor laser unit collimation, and a is prism light-emitting surface width, and b is trigone
The spacing of mirror, x be prism plane of incidence height, spacing of the w between adjacent two semiconductor laser element.
Above-mentioned semiconductor laser unit is the semiconductor laser chip being welded on heat sink, the semiconductor laser
Chip is single tube chip, a mini bar either bar item or for multiple single tube chips, mini bar or bar item.
Above-mentioned collimation lens set includes fast axis collimation lens and slow axis collimating array, wherein, fast axis collimation lens are collimation D
Type non-spherical lens, slow axis collimating array are single array cylindrical lens.
The material of above-mentioned parallel six face prism is glass, and the plane of incidence and exit facet plate anti-reflection film.
The present invention has the following advantages：
1) semiconductor laser, which closes the laser beam that beam system is sent, has single polarization characteristic, therefore system optical energy loss rate
It is low；
2) semiconductor laser closes beam system and closes Shu Fangfa using plug hole, and the uniformity of emergent light spot is very high, and reduces
The purpose of light product ginseng BPP (light-emitting surface is multiplied by the angle of divergence), can improve beam quality, improve its output power density, make it more
Beneficial to application；
3) semiconductor laser closes beam system can be suitable for fast and slow axis simultaneously；
4) processing is simple, and fully reflecting surface is not required plated film that total reflection, low manufacture cost can be realized.
Description of the drawings
Fig. 1 closes beam system schematic diagram for a kind of high-power semiconductor laser；
Fig. 2-1 is the installation site and scale diagrams for closing prism arrangement in beam system；
Fig. 2-2 is semiconductor laser stacks sizing specification figure；
Fig. 3 is the sizing specification figure for closing parallel six face prism in beam system.
Drawing reference numeral explanation：1 is semiconductor laser stacks, and 2 be fast axis collimation lens, and 3 be slow axis collimating array, and 4 are
Parallel six face prism, 5 be prism arrangement, and 6 be prism arrangement installation region；7 be total reflection area, and 8 be collimation lens set, and 9 be conjunction
Bundle device.
Specific embodiment
The solution of the present invention is described further with reference to example and attached drawing, Fig. 1 swashs for a kind of high power semiconductor
Light device closes beam system schematic diagram, and the semiconductor that a kind of high-power semiconductor laser closes beam system and includes setting gradually along light path swashs
Light device folds battle array 1, collimation lens set 8 and beam merging apparatus 9, and the small prism wherein in the prism arrangement 5 in beam merging apparatus 9 is selected with three
Prism, the angle of the acute angle of the two neighboring side of parallel six face prism 4 is 45 °.Semiconductor laser 1 includes 4 semiconductors
Laser element and upper and lower two parts are divided into using 2, top semiconductor laser element as the upper of semiconductor laser stacks
Part, the lower part of 2 semiconductor laser elements of lower part as semiconductor laser stacks, the small prism in prism arrangement
For 2 prisms, the incidence of 2 prisms on semiconductor laser stacks in the combination of fraction of laser light beam orthogonal entrance prism
Face, i.e., the laser that the 2 of semiconductor laser stacks top semiconductor laser element is sent are incident to 2 prisms respectively
The plane of incidence because laser beam incident direction is vertical with the prism plane of incidence, will not reflect inside prism, swash
Light light beam is incident to the exit face of level after the prism plane of incidence from parallel six face prism, i.e. exit direction and incident direction
Unanimously, by two, parallel six face prism after the parallel six faces prism of semiconductor laser stacks lower part laser beam vertical incidence
Opposite face carries out separating the laser beam plug hole conjunction beam horizontal exit penetrated after being totally reflected twice with top.The energy of combined beam light beam
The one of the laser diameter that density is 2 times of incident optical energy metric density and a diameter of semiconductor laser stacks of combined beam light beam are sent
Half, the purpose of light product ginseng BPP (light-emitting surface is multiplied by the angle of divergence) is reduced, beam quality can be improved, it is close to improve its output power
Degree makes it be more conducive to apply.
As shown in figure 3, semiconductor laser stacks are made of 4 semiconductor laser elements, then parallel six face prism
Thickness t and width L meets：
Spacing of the w between two neighboring semiconductor laser element；T is the thickness of parallel six face prism；L is parallel six
The width of face prism.
Using prism, each small prism is spaced at equal intervals small prism in the prism arrangement, meets following relation：
Wherein d is the beam diameter after single semiconductor laser unit collimation, and a is prism light-emitting surface width, and b is trigone
The spacing of mirror, x be prism plane of incidence height, spacing of the w between adjacent two semiconductor laser element.
The acute angle of the two neighboring side of above-mentioned parallel six face prism meets
The semiconductor laser unit is the semiconductor laser chip being welded on heat sink, the semiconductor laser
Chip is single tube chip, a mini bar either bar item or for multiple single tube chips, mini bar or bar item.
The collimation lens set includes fast axis collimation lens and slow axis collimating array, wherein, fast axis collimation lens are collimation D
Type non-spherical lens, slow axis collimating array are single array cylindrical lens.
The material of the parallel six face prism is glass, and the plane of incidence and exit facet plate anti-reflection film.
Wherein the small prism of prism arrangement can be prism, but be not limited to prism, can also be polygon prism.
Claims (5)
1. a kind of high-power semiconductor laser closes beam system, it is characterised in that：Semiconductor including being set gradually along light path swashs
Light device folds battle array, collimation lens set and beam merging apparatus, and the semiconductor laser stacks are by several semiconductor laser unit heaps
It is stacked, the semiconductor laser unit is the semiconductor laser chip being welded on heat sink；Semiconductor laser stacks root
Top half and the latter half are divided into according to stack height；The beam merging apparatus includes a parallel six face prism and prism group
It closes, there are two adjacent sides towards semiconductor laser stacks light direction for parallel six face prism, right respectively in short transverse
The top half of semiconductor laser stacks described in Ying Yu, the latter half, wherein the side of parallel six faces prism the latter half with
The light direction is vertical；The prism arrangement includes several small prisms, and small number of prisms is semiconductor laser stacks
The half of laser cell quantity, the side of the light-emitting surface of small prism with parallel six faces prism top half fit closely, and enter light
Face is vertical with the light direction, several positions of small prism in the height direction correspond respectively to semiconductor laser and fold
Battle array top half each semiconductor laser unit so that the laser beam that semiconductor laser stacks top half is sent according to
It is secondary to be emitted by prism arrangement with after the prism of parallel six face along former optical axis, the laser that semiconductor laser stacks the latter half is sent
Light beam successively by the lower face of parallel six face prism, upper surface carry out twice be totally reflected after with semiconductor laser stacks upper half
The laser beam of part outgoing is mutually parallel to form plug hole conjunction beam；
The acute angle of the parallel six face two neighboring side of prism
Semiconductor laser stacks are made of even number semiconductor laser unit, then the thickness t and width L of parallel six face prism expire
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Semiconductor laser stacks are made of odd number semiconductor laser unit, then the thickness t and width L of parallel six face prism expire
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M is semiconductor laser unit quantity, and spacing of the w between two neighboring semiconductor laser unit, t is parallel six face prism
Thickness, L be parallel six face prism width, n be parallel six face prism material refractive index, d be single semiconductor laser list
Beam diameter after member collimation.
2. high-power semiconductor laser according to claim 1 closes beam system, it is characterised in that：In the prism arrangement
Small prism using prism, each small prism is spaced at equal intervals, and meets following relation：
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Wherein d is the beam diameter after single semiconductor laser unit collimation, and a is prism light-emitting surface width, and b is prism
Spacing, x be prism plane of incidence height, spacing of the w between adjacent two semiconductor laser unit.
3. high-power semiconductor laser according to claim 1 closes beam system, it is characterised in that：The semiconductor laser
Unit is the semiconductor laser chip being welded on heat sink, the semiconductor laser chip for a single tube chip or bar
Item is multiple single tube chips or bar item.
4. high-power semiconductor laser according to claim 1 closes beam system, it is characterised in that：The collimation lens set
Including fast axis collimation lens and slow axis collimating array, wherein, fast axis collimation lens are collimation D type non-spherical lenses, and slow axis collimates
Array is single array cylindrical lens.
5. high-power semiconductor laser according to claim 1 closes beam system, it is characterised in that：The parallel six face rib
The material of mirror is glass, and the plane of incidence and exit facet plate anti-reflection film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410195845.0A CN103944067B (en) | 2014-05-09 | 2014-05-09 | A kind of high-power semiconductor laser closes beam system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410195845.0A CN103944067B (en) | 2014-05-09 | 2014-05-09 | A kind of high-power semiconductor laser closes beam system |
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| Publication Number | Publication Date |
|---|---|
| CN103944067A CN103944067A (en) | 2014-07-23 |
| CN103944067B true CN103944067B (en) | 2018-05-25 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106410608A (en) | 2016-11-18 | 2017-02-15 | 上海高意激光技术有限公司 | Laser array and laser beam combining device |
| CN108873128B (en) * | 2018-09-05 | 2024-02-23 | 四川新易盛通信技术有限公司 | Prism, method for using prism as light beam adjuster, prism set and light assembly |
| CN112782860A (en) * | 2019-11-01 | 2021-05-11 | 广州光联电子科技有限公司 | Light source system |
| CN113972555A (en) * | 2020-07-23 | 2022-01-25 | 山东华光光电子股份有限公司 | Optical processing method for semiconductor laser stack array |
| CN112864792A (en) * | 2021-01-08 | 2021-05-28 | 西安炬光科技股份有限公司 | Semiconductor laser module and optical system |
| CN114094444B (en) * | 2021-10-26 | 2024-04-19 | 中国电子科技集团公司第十一研究所 | Laser diode area array system for realizing uniform flat-top distribution |
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Address after: 710077 Xi'an hi tech Zone 56, Xi'an, Shaanxi Province, No. 56 Patentee after: FOCUSLIGHT TECHNOLOGIES INC. Address before: 710119 Third Floor, Building 10, 17 Information Avenue, New Industrial Park, Xi'an High-tech Zone, Shaanxi Province Patentee before: Xi'an Focuslight Technology Co., Ltd. |
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