CN203871655U - Beam combining device for high-power semiconductor lasers - Google Patents
Beam combining device for high-power semiconductor lasers Download PDFInfo
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- CN203871655U CN203871655U CN201420238012.3U CN201420238012U CN203871655U CN 203871655 U CN203871655 U CN 203871655U CN 201420238012 U CN201420238012 U CN 201420238012U CN 203871655 U CN203871655 U CN 203871655U
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- semiconductor laser
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- power semiconductor
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
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- 230000010287 polarization Effects 0.000 description 8
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- 235000008434 ginseng Nutrition 0.000 description 2
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- 238000005265 energy consumption Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
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- Semiconductor Lasers (AREA)
Abstract
The utility model provides a beam combining device for high-power semiconductor lasers. A laser light source with good uniformity and high energy density can be obtained. The device comprises a semiconductor laser stacked array, a collimating lens group and a beam combining system, which are sequentially arranged along a light path. The semiconductor laser stacked array is composed of a plurality of semiconductor laser units. The beam combining system comprises N parallel six-sided prisms which are sequentially arranged in parallel and at equal intervals along the light outgoing direction of the semiconductor laser stacked array, and the N parallel six-sided prisms sequentially move upward at equal displacement in the stacking height direction of the semiconductor laser stacked array. The parallel six-sided prisms respectively have two adjacent sides facing the semiconductor laser stacked array, the upper side forms an included angle of 45 degrees with the light outgoing direction, and the lower side forms an included angle of 135 degrees with the upper side.
Description
Technical field
The utility model patent belongs to laser application, is specifically related to a kind of beam merging apparatus for high-power semiconductor laser.
Background technology
Semiconductor laser has advantages of that volume is little, lightweight, reliability is high, long service life, low in energy consumption, be widely used at present the every field of national economy, but current semiconductor laser apply the restriction that is subject to its beam quality, be instantly important research direction so improve beam quality, brightness and the power of semiconductor laser.Swash combiner technology development in recent years rapid, it is the process improving beam quality, increase power output, improve power density.Swash combiner technology is used widely in laser processing and high-power optical-fiber coupling product.
Conventional sharp combiner method has polarization coupling at present, and wavelength closes bundle and bundle is closed in space.Common polarization coupling device is made up of 1/2 slide and polarization splitting prism (PBS), and a part of laser becomes TM (or TM become TE) by polarization state from TE by 1/2 slide, then closes bundle with another part laser.Because the LASER Light Source degree of polarization of semiconductor laser is about 90%, if adopt polarization coupling, optical energy loss is larger, is only applicable to the bundle that closes of quick shaft direction, and output light be mixed polarized light, can not again carry out polarization coupling with other light sources; In the time using the folded battle array of semiconductor laser as light source, output facula still retains the luminous dead band between bar and bar, and the uniformity is poor.It is that the laser of different wave length closes bundle that wavelength closes bundle, but cannot apply in the occasion that requires laser to have single wavelength, makes it have limitation in application.
Utility model content
In order to overcome the deficiencies in the prior art, the utility model provides a kind of beam merging apparatus for high-power semiconductor laser, can obtain good uniformity and the high LASER Light Source of energy density, and scheme is as follows:
For a beam merging apparatus for high-power semiconductor laser, comprise semiconductor laser stacks, the collimation lens set setting gradually along light path and close beam system, described semiconductor laser stacks is made up of several semiconductor laser units; The described beam system that closes comprises along the semiconductor laser stacks light direction successively parallel N equidistantly arranging parallel six prisms, and in semiconductor laser stacks as high direction same displacement upwards successively; Parallel six prisms have two adjacent sides towards semiconductor laser stacks; Wherein upper side and described light direction angle at 45 °, the angle of lower side and upper side is 135 °;
The number N and the semiconductor laser unit number m that close parallel six prisms in beam system meet relation:
M is even number,
or m is odd number,
N parallel six prism thickness, highly all equate and meet following relation:
Thickness meets relation: d≤a≤w+d
Highly meet relation: h=(m-1) (w+d)
Position relationship meets following coordinate relation: taking the upper side of parallel six prisms of first bottom as initial point O, the coordinate figure that M bottom of the upper side of parallel six prisms of N sheet is ordered meets
y＝(N-1)(w+d)
x≥a
Wherein, m is semiconductor laser unit number in semiconductor laser stacks, N is parallel six prism numbers, w is the beam separation that adjacent semiconductor laser cell sends, d is the laser beam diameter that semiconductor laser element sends, a is the thickness of each parallel six prisms, and h is the height of each parallel six prisms.
Based on above-mentioned basic scheme, the utility model also does following optimization and limits and improve:
The plane of incidence of above-mentioned parallel six prisms and exit facet plating anti-reflection film (being described lower side and side in parallel plating anti-reflection film).
Above-mentioned semiconductor laser unit is the semiconductor laser chip being welded on heat sink, and described semiconductor laser chip is a single tube chip, mini bar or bar bar, or be multiple single tube chips, mini bar or cling to bar.
Above-mentioned collimation lens set comprises fast axis collimation lens and slow axis collimating array, and wherein fast axis collimation lens can be collimation D type non-spherical lens; Slow axis collimating array is single array cylindrical lens.
Above-mentioned N parallel six prisms are fixed by fixed mount, and the material of fixed mount is plastics, aluminium, steel or copper.
Above-mentioned combination of closing N identical parallel six prisms of beam system employing, N parallel six prisms fit tightly successively, and successively to top offset w+d, the thickness of every parallel six prisms is w+d; Or the part that is combined into one of such N identical parallel six prisms.
The utlity model has following advantage:
1) laser beam that this laser beam merging apparatus sends has single polarization characteristic, and therefore system optical energy loss rate is low;
2) this laser beam merging apparatus adopts plug hole to close Shu Fangfa, and can reduce light long-pending ginseng BPP (light-emitting area is multiplied by the angle of divergence), improves beam quality, the uniformity of outgoing hot spot is very high, improve beam quality, improve its output power density, make it be more conducive to application.
3) the laser beam merging apparatus in the utility model can be applicable to fast and slow axis simultaneously;
4) processing is simple, and fully reflecting surface does not need plated film can realize total reflection, and cost of manufacture is low.
Brief description of the drawings
Fig. 1 is a kind of schematic diagram of the beam merging apparatus for high-power semiconductor laser.
Fig. 2 is the sizing specification of semiconductor laser stacks.
Fig. 3 is the sizing specification of closing beam system.
Fig. 4 is the coordinate position explanation of closing beam system.
Fig. 5 is the embodiment schematic diagram that adopts three parallel six prisms combinations.
Drawing reference numeral explanation: 1 is semiconductor laser stacks, and 2 is fast axis collimation lens, and 3 is slow axis collimating array, and 4 is collimation lens set, and 5 for closing beam system, and 6 is parallel six prisms.
Embodiment
Below in conjunction with example and accompanying drawing, scheme of the present utility model is described further.
Fig. 1 is in conjunction with a kind of beam merging apparatus for high-power semiconductor laser of the present utility model, comprises semiconductor laser stacks 1, collimation lens set 4 and close beam system 5 forming.Described semiconductor laser stacks 1 is made up of 4 semiconductor laser units; Described collimation lens set 4 is positioned over semiconductor laser laser emitting place, comprises fast axis collimation lens 2 and slow axis collimating array 3, and wherein fast axis collimation lens 2 can be collimation D type non-spherical lens; Slow axis collimating array 3 is single array cylindrical lens; The described beam system 5 that closes is positioned over the laser beam exit direction after collimation, is made up of two each and every one parallel six prisms 4, and two parallel six prisms 4 are parallel to each other and equidistantly place, and placement location successively in the vertical direction have fixing to top offset.Parallel six prisms 4 have two adjacent sides towards semiconductor laser stacks 1, upper side and laser beam axis angle at 45 °, another side be vertically place and with the angle of upper side be 135 °, can ensure the critical angle condition of total reflection.The laser beam that semiconductor laser stacks sends is by after this beam merging apparatus, beam diameter is the half of original diameter, energy density is 2 times of incident optical energy metric density, reduce the object of light long-pending ginseng BPP (light-emitting area is multiplied by the angle of divergence), can improve beam quality, improve its output power density, make it be more conducive to application.
Described collimation lens set comprises fast axis collimation lens and slow axis collimating array, and wherein fast axis collimation lens can be collimation D type non-spherical lens; Slow axis collimating array is single array cylindrical lens.
As Figure 1-Figure 4, the number of closing parallel six prisms in beam system is the half of semiconductor laser stacks mini-bus bar number 4, and two parallel six prism thickness are equal, and is highly equal to each other, and meets following relation:
Thickness meets relation: d≤a≤w+d
Highly meet relation: h=3 (w+d)
Position relationship need meet following coordinate relation: taking the upper reflecting surface of parallel six prisms of first bottom as initial point O, the coordinate figure that M bottom of the upper reflecting surface of the 2nd parallel six prisms is ordered meets
y＝w+d
x≥a
Wherein, N is parallel six prism numbers, and w is the beam separation that adjacent semiconductor laser cell sends, and d is the laser beam diameter that semiconductor laser element sends, and a is six prism thickness of monolithic parallel, and h is six prism heights of monolithic parallel.
The plane of incidence of parallel six prisms and exit facet preferably add plating anti-reflection film.
Two parallel six prisms can be fixed by fixed mount, and the material of fixed mount can be plastics, aluminium, steel or copper.
Fig. 5 is the embodiment of an optimization of a kind of beam merging apparatus for high-power semiconductor laser of the present utility model, closes the mode that beam system adopts three parallel six prisms to combine, and prism combination can be made of one part.Parallel six prisms in this device mutually fit tightly in laser beam exit direction, move on equidistant successively in semiconductor laser stacks as high direction, above move distance for w+d, and the thickness of every parallel six prisms is w+d.This closes beam system and has greatly dwindled device volume, and effectively compression light-emitting area, close the good beam quality that bundle obtains, energy density is large.
Claims (6)
1. for a beam merging apparatus for high-power semiconductor laser, it is characterized in that: comprise semiconductor laser stacks, the collimation lens set setting gradually along light path and close beam system, described semiconductor laser stacks is made up of several semiconductor laser units; The described beam system that closes comprises along the semiconductor laser stacks light direction successively parallel N equidistantly arranging parallel six prisms, and in semiconductor laser stacks as high direction same displacement upwards successively; Parallel six prisms have two adjacent sides towards semiconductor laser stacks; Wherein upper side and described light direction angle at 45 °, the angle of lower side and upper side is 135 °;
The number N and the semiconductor laser unit number m that close parallel six prisms in beam system meet relation:
M is even number,
or m is odd number,
N parallel six prism thickness, highly all equate and meet following relation:
Thickness meets relation: d≤a≤w+d
Highly meet relation: h=(m-1) (w+d)
Position relationship meets following coordinate relation: taking the upper side of parallel six prisms of first bottom as initial point O, the coordinate figure that M bottom of the upper side of parallel six prisms of N sheet is ordered meets
y＝(N-1)(w+d)
x≥a
Wherein, m is semiconductor laser unit number in semiconductor laser stacks, N is parallel six prism numbers, w is the beam separation that adjacent semiconductor laser cell sends, d is the laser beam diameter that semiconductor laser element sends, a is the thickness of each parallel six prisms, and h is the height of each parallel six prisms.
2. the beam merging apparatus for high-power semiconductor laser according to claim 1, is characterized in that: the plane of incidence of described parallel six prisms and exit facet plating anti-reflection film.
3. the beam merging apparatus for high-power semiconductor laser according to claim 1, it is characterized in that: described semiconductor laser unit is the semiconductor laser chip being welded on heat sink, described semiconductor laser chip is a single tube chip, mini bar or bar bar, or is multiple single tube chips, mini bar or bar bar.
4. the beam merging apparatus for high-power semiconductor laser according to claim 1, is characterized in that: described collimation lens set comprises fast axis collimation lens and slow axis collimating array, and wherein fast axis collimation lens can be collimation D type non-spherical lens; Slow axis collimating array is single array cylindrical lens.
5. the beam merging apparatus for high-power semiconductor laser according to claim 1, is characterized in that: described N parallel six prisms are fixed by fixed mount, and the material of fixed mount is plastics, aluminium, steel or copper.
6. the beam merging apparatus for high-power semiconductor laser according to claim 1, it is characterized in that: described in close beam system and adopt N identical parallel six prisms combination, N parallel six prisms fit tightly successively, and successively to top offset w+d, the thickness of every parallel six prisms is w+d;
Or the part that is combined into one of such N identical parallel six prisms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420238012.3U CN203871655U (en) | 2014-05-09 | 2014-05-09 | Beam combining device for high-power semiconductor lasers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420238012.3U CN203871655U (en) | 2014-05-09 | 2014-05-09 | Beam combining device for high-power semiconductor lasers |
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| Publication Number | Publication Date |
|---|---|
| CN203871655U true CN203871655U (en) | 2014-10-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420238012.3U Expired - Lifetime CN203871655U (en) | 2014-05-09 | 2014-05-09 | Beam combining device for high-power semiconductor lasers |
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| Country | Link |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103944068A (en) * | 2014-05-09 | 2014-07-23 | 西安炬光科技有限公司 | Beam combining device for high-power semiconductor laser |
| CN109638649A (en) * | 2019-01-14 | 2019-04-16 | 北京工业大学 | A kind of high power semiconductor folds the method and device of battle array space conjunction beam |
-
2014
- 2014-05-09 CN CN201420238012.3U patent/CN203871655U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103944068A (en) * | 2014-05-09 | 2014-07-23 | 西安炬光科技有限公司 | Beam combining device for high-power semiconductor laser |
| CN109638649A (en) * | 2019-01-14 | 2019-04-16 | 北京工业大学 | A kind of high power semiconductor folds the method and device of battle array space conjunction beam |
| CN109638649B (en) * | 2019-01-14 | 2020-11-03 | 北京工业大学 | High-power semiconductor stacked array space beam combination method and device |
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