CN101369717B - Multi-light beam coupling high power semiconductor laser unit - Google Patents
Multi-light beam coupling high power semiconductor laser unit Download PDFInfo
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- CN101369717B CN101369717B CN2008100512112A CN200810051211A CN101369717B CN 101369717 B CN101369717 B CN 101369717B CN 2008100512112 A CN2008100512112 A CN 2008100512112A CN 200810051211 A CN200810051211 A CN 200810051211A CN 101369717 B CN101369717 B CN 101369717B
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Abstract
The invention relates to high-power semiconductor laser device preparation technology, especially a multiple light beam coupling high-power semiconductor laser device, including four semiconductor laser devices with identical polarization state, a wavelength selection element, a beam-expanding focusing device. The wavelength of two semiconductor laser devices of the four semiconductor laser devices is Lambada1, and the wavelength of another two is Lambada2; the two semiconductor laser devices with same wavelength as a group, and the another two semiconductor laser devices with same wavelengthas the other group, wherein the two groups form two light beam coupling light sources by a polarization coupled device; the two light beam coupling light sources are coupled into a beam by the wavelength selection element, to transmit to the beam-expanding focusing device to send out. The invention provides most advanced and feasible preparation technology for correlation technique field of demand on ultra-high-power semiconductor laser device until today.
Description
Technical field
The present invention relates to the high power semiconductor lasers technology of preparing, particularly a kind of by the high power semiconductor laser unit of light beam coupling to realize to a plurality of semiconductor laser light resources.
Background technology
Laser with respect to other type, semiconductor laser (LD) has that volume is little, in light weight, efficient is high, the life-span is long, direct advantage such as current-modulation, therefore used widely in various fields such as industry, military affairs, nuclear energy, communications, the requirement of noise spectra of semiconductor lasers power output and brightness is also more and more higher simultaneously.By the semiconductor laser light emitting unit being integrated into one dimensional linear array (LD Bar) and piling up the two-dimensional array (LD Stack) of a plurality of LD Bar, can improve the power output of semiconductor laser effectively, but because the restriction of being dispelled the heat, two-dimensional array cannot pile up LD Bar is unconfined, can accomplish the lamination of 25 Bar in the world, continuous power output 2500w, such power still can not satisfy the needs of industry to processing such as Metal Cutting, welding.This just requires to adopt suitable light beam coupling method, with the light beam coupling of a plurality of semiconductor laser arrays to same optical path, to improve power output and brightness.Adopt the polarization coupled technology that light beam is coupled and final coupled into optical fibres output.Because semiconductor laser array is the linearly polarized light of height, the polarization coupled prism can be exported through light-beam forming unit the output of two semiconductor laser array light beam coupling again with light beam coupling to optical fiber.
Fig. 4 is a kind of polarization direction half-twist of realizing a branch of semiconductor laser wherein by half-wave plate to obtain the polarised light with the semiconductor laser array different directions, export high-power semiconductor laser with cube polarization coupled prism-coupled light beam with realization then, polarization coupled technology (H J Baker is arranged now in the world, JF Monjardin, P Kneip, D R Hall, 1.8kW diode laser system for fibre-delivery usingbrightness-enhanced diode stacks and a novel final beam-shaper[J] .SPIE Proc, 2008, Vol.6876), this device is two semiconductor lasers 21 with the identical polarization state of same wavelength as shown in Figure 3,22 one-tenth 90 ° of placements, one of them semiconductor laser 22 process half-wave plate 23 is with its polarization direction half-twist, make it vertical with another semiconductor laser 21 polarization directions, be coupled into a branch of output with cube polarization coupled prism 24 and semiconductor laser 241 then, pass through plano-convex cylindrical mirror 25 again, 26,27,29, speculum 28 and plano-concave cylindrical mirror 30,31 combination, converged on the input end face of optical fiber 32, through optical fiber 32 outputs.This structure can realize closing bundle, and shortcoming is: (1) two-laser vertically becomes 90 ° of placements, regulates complicated; (2) adopt cube polarization coupled prism, middle cemented surface makes the glue fusing in long-time high power uses, efficient is reduced; (3) because the angle of divergence of semiconductor laser own is not more directly placed the reduction of half-wave plate rotatory polarization direction efficient through collimation.
Summary of the invention
The purpose of this invention is to provide a kind of simple in structure, easy multi-light beam coupling high power semiconductor laser unit of processing of element,, realize higher power and brightness output to overcome the scarce limit of above-mentioned present prior art.
Multi-light beam coupling high power semiconductor laser unit of the present invention, the semiconductor laser, the wavelength that comprise four identical polarization states are selected element, are expanded the beam-focuser part, and the wavelength of two semiconductor lasers in the semiconductor laser of described four identical polarization states is λ
1, the wavelength of two semiconductor lasers is λ in addition
2With described four semiconductor laser medium wavelengths is λ
1Two semiconductor lasers be one group, be λ with the wavelength
2Two semiconductor lasers be another group, form two light beam coupling light sources by the polarization coupled device respectively; These two light beam coupling light sources are each other vertically to be placed, at the intersection point place of two light beam coupling light source output beams described wavelength is set and selects element, the light beam of described one group of light beam coupling light source outgoing is selected the transmission of element total transmissivity through wavelength, another group light beam coupling light source ' light beam of outgoing is coupled into aforesaid transmitted light beam after wavelength is selected the element total reflection and a branch ofly penetrates after transferring to described expansion beam-focuser part.
Described polarization coupled device is the right angle polarization coupled prism that is coated with polarizing coating on its inclined-plane, on a side right angle face of this right angle polarization coupled prism, post one with the corresponding quarter-wave plate of described this group two-laser wavelength, be coated with highly reflecting films on the outer face of this quarter-wave plate; The outgoing beam of a laser revolves transmission direction to turn 90 degrees the back through the reflection of the inclined-plane of this right angle polarization coupled prism and transmits, the outgoing beam of another laser by this right angle polarization coupled prism opposite side right angle face after the inclined-plane internal reflection to described quarter-wave plate, after the reflection of this quarter-wave plate of process realized 90 degree rotations of polarization direction again, inclined-plane and aforesaid folded light beam that this right angle polarization coupled prism is crossed in transmission were coupled into a branch of transmission.
Exit end at described each semiconductor laser also is respectively equipped with the fast axis collimation mirror, to reduce the fast axle angle of divergence.
Described two semiconductor lasers forming respectively in two light beam coupling light sources are being 1/2 of semiconductor laser array spacing d perpendicular to the alternate position spike on fast axle (y) direction of semiconductor laser array P-n junction plane.
Characteristics of the present invention are to adopt quarter-wave plate to make two wavelength identical, thereby the polarization direction of a semiconductor laser array light beam in the identical laser of polarization state revolve turn 90 degrees and the polarization direction of another semiconductor laser array vertical mutually in right angle polarization coupled prism coupling export, realize the coupling of two light beams, under the condition that does not change beam quality, power output and brightness are risen to original 2 times, and, filled the luminous space between semiconductor laser array LD Bar each other because two semiconductor lasers staggered relatively are being 1/2 of semiconductor laser array spacing d perpendicular to the alternate position spike on the y direction of principal axis of semiconductor laser array P-n junction plane; Realize closing bundle by the quarter-wave plate and the polarization coupled prism that match.Form two in this way respectively polarization state is identical and light beam coupling light source that wavelength is different, polarization state is identical and the light beam of the light beam coupling light source output that wavelength is different is coupled once more with these two to select element by wavelength again, the final employing expands that the coupling of bundle focusing arrangement is laggard goes into optical fiber output, promptly obtains bigger power output and brightness.The present invention provides to the most advanced feasible technology of preparing so far the demand of ultra-high power semiconductor laser for correlative technology field.
Description of drawings
Fig. 1 is the structural representation of multi-light beam coupling high power semiconductor laser unit of the present invention;
Fig. 2 is that two semiconductor laser array position height that constitute every group of light beam coupling light source shown in Fig. 1 concern schematic diagram;
Fig. 3 is prior art realizes the output high-power semiconductor laser with the light beam coupling of half-wave plate and cube polarization coupled prism a device schematic diagram.
Embodiment
The embodiment that provides below in conjunction with accompanying drawing is described in further detail the present invention.
With reference to Fig. 1, a kind of multi-light beam coupling high power semiconductor laser unit, semiconductor laser 1,1 ', 2,2 ', the wavelength that comprises four identical polarization states selected element 7, expanded the beam-focuser part, and two semiconductor lasers in the semiconductor laser of described four identical polarization states 1,1 ' wavelength are λ
1, in addition two semiconductor lasers 2,2 ' wavelength are λ
2With described four semiconductor laser medium wavelengths is λ
1Two semiconductor lasers 1,1 ' be one group, be λ with the wavelength
2Two semiconductor lasers be another group, form two light beam coupling light sources 6,6 ' by the polarization coupled device respectively; These two light beam coupling light sources 6,6 ' are each other vertically to be placed, at the intersection point place of two light beam coupling light sources 6,6 ' output beam described wavelength is set and selects element 7, the light beam of described one group of light beam coupling light source 6 outgoing is selected the transmission of element 7 total transmissivities through wavelength, and the light beam of another group light beam coupling light source 6 ' outgoing is coupled into aforesaid transmitted light beam after wavelength is selected element 7 total reflections and a branch ofly penetrates after transferring to described expansion beam-focuser part.
Described polarization coupled device is the right angle polarization coupled prism 4 that is coated with polarizing coating on its inclined-plane, on a side right angle face of this right angle polarization coupled prism 4, post one with the corresponding quarter-wave plate 5 of described this group two-laser wavelength, be coated with highly reflecting films on the outer face of this quarter-wave plate 5; The outgoing beam of a laser revolves transmission direction to turn 90 degrees the back through the reflection of the inclined-plane of this right angle polarization coupled prism 4 and transmits, the outgoing beam of another laser by this right angle polarization coupled prism 4 opposite side right angle face after the inclined-plane internal reflection to described quarter-wave plate 5, after the reflection of this quarter-wave plate 5 of process realized 90 degree rotations of polarization direction again, inclined-plane and aforesaid folded light beam that this right angle polarization coupled prism 4 is crossed in transmission were coupled into a branch of transmission.
Described expansion beam-focuser part is made up of the post lens 8, globe lens 9, the meniscus lens 10 that set gradually along coupling back beam Propagation direction.
Also be coated with high transmission film on described quarter-wave plate 5 and the inner face that right angle polarization coupled prism 4 pastes mutually.
Also be respectively equipped with fast axis collimation mirror 3 at described each semiconductor laser 1,1 ', 2,2 ' exit end, to reduce the fast axle angle of divergence.
Described fast axis collimation mirror 3 can adopt post lens, attached column lens or gradual index lens.
With reference to Fig. 2, described two semiconductor lasers forming respectively in two light beam coupling light sources 6,6 ' are being 1/2 of semiconductor laser array spacing d perpendicular to the alternate position spike on fast axle (y) direction of semiconductor laser array P-n junction plane.The light beam of each laser in the two-laser all is in the luminous space of another laser, more helps focusing and obtain small light spot.
Claims (6)
1. multi-light beam coupling high power semiconductor laser unit, the semiconductor laser (1,1 ', 2,2 '), the wavelength that comprise four identical polarization states are selected element (7), are expanded the beam-focuser part, and the wavelength of two semiconductor lasers (1,1 ') in the semiconductor laser of described four identical polarization states is λ
1, the wavelength of two semiconductor lasers (2,2 ') is λ in addition
2, it is characterized in that: with described four semiconductor laser medium wavelengths is λ
1Two semiconductor lasers (1,1 ') be one group, be λ with the wavelength
2Two semiconductor lasers be another group, form two light beam coupling light sources (6,6 ') by the polarization coupled device respectively; These two light beam coupling light sources (6,6 ') are each other vertically to be placed, at the intersection point place of two light beam coupling light source (6,6 ') output beams described wavelength is set and selects element (7), the light beam of described one group of light beam coupling light source (6) outgoing is selected element (7) total transmissivity transmission through wavelength, and the light beam of another group light beam coupling light source (6 ') outgoing is coupled into aforesaid transmitted light beam after wavelength is selected element (7) total reflection and a branch ofly penetrates after transferring to described expansion beam-focuser part;
Described polarization coupled device is the right angle polarization coupled prism (4) that is coated with polarizing coating on its inclined-plane, on a side right angle face of this right angle polarization coupled prism (4), post one with described this corresponding quarter-wave plate of group two-laser wavelength (5), be coated with highly reflecting films on the outer face of this quarter-wave plate (5); The outgoing beam of a laser revolves transmission direction to turn 90 degrees the back through the reflection of the inclined-plane of this right angle polarization coupled prism (4) and transmits, the outgoing beam of another laser by this right angle polarization coupled prism (4) opposite side right angle face after the inclined-plane internal reflection to described quarter-wave plate (5), after the reflection of passing through this quarter-wave plate (5) again realized 90 degree rotations of polarization direction, inclined-plane and aforesaid folded light beam that this right angle polarization coupled prism (4) is crossed in transmission were coupled into a branch of transmission.
2. multi-light beam coupling high power semiconductor laser unit according to claim 1 is characterized in that described expansion beam-focuser part is made up of the post lens (8), globe lens (9), the meniscus lens (10) that set gradually along coupling back beam Propagation direction.
3. multi-light beam coupling high power semiconductor laser unit according to claim 1 is characterized in that, also is coated with high transmission film on described quarter-wave plate (5) and the inner face that right angle polarization coupled prism (4) pastes mutually.
4. multi-light beam coupling high power semiconductor laser unit according to claim 1 is characterized in that, also is respectively equipped with fast axis collimation mirror (3) at the exit end of described each semiconductor laser (1,1 ', 2,2 '), to reduce the fast axle angle of divergence.
5. multi-light beam coupling high power semiconductor laser unit according to claim 4 is characterized in that described fast axis collimation mirror (3) adopts post lens, attached column lens or gradual index lens.
6. multi-light beam coupling high power semiconductor laser unit according to claim 1, it is characterized in that, described form respectively in two light beam coupling light sources (6,6 ') two semiconductor lasers perpendicular to the alternate position spike on fast axle (y) direction of the array P-n junction plane of semiconductor laser be semiconductor laser array spacing d 1/2.
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| CN2008100512112A CN101369717B (en) | 2008-09-25 | 2008-09-25 | Multi-light beam coupling high power semiconductor laser unit |
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| CN2008100512112A CN101369717B (en) | 2008-09-25 | 2008-09-25 | Multi-light beam coupling high power semiconductor laser unit |
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| CN101369717A CN101369717A (en) | 2009-02-18 |
| CN101369717B true CN101369717B (en) | 2010-06-23 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102082395B (en) * | 2010-12-17 | 2013-01-09 | 西安炬光科技有限公司 | Multi-wavelength high-power semiconductor laser coupling system and preparation method thereof |
| CN103293694A (en) * | 2013-04-22 | 2013-09-11 | 中国科学院半导体研究所 | Multiple semiconductor laser beam combining system |
| CN105511085B (en) * | 2015-11-10 | 2019-03-08 | 河南中光学集团有限公司 | A kind of laser beam expanding fusion optical system |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1873466A (en) * | 2005-05-30 | 2006-12-06 | 成序三 | Optical system for synthesizing multi laser beams and method |
| CN1301419C (en) * | 2004-03-22 | 2007-02-21 | 昂纳信息技术（深圳）有限公司 | Multi-laser beam combining apparatus |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1301419C (en) * | 2004-03-22 | 2007-02-21 | 昂纳信息技术（深圳）有限公司 | Multi-laser beam combining apparatus |
| CN1873466A (en) * | 2005-05-30 | 2006-12-06 | 成序三 | Optical system for synthesizing multi laser beams and method |
Non-Patent Citations (4)
| Title |
|---|
| 冯广智等.808nm大功率半导体激光迭阵偏振耦合技术.发光学报29 4.2008,29(4),695-700. |
| 冯广智等.808nm大功率半导体激光迭阵偏振耦合技术.发光学报29 4.2008,29(4),695-700. * |
| 高欣等.多单元半导体激光器的高亮度光纤耦合输出.中国激光34 11.2007,34(11),1472-1475. |
| 高欣等.多单元半导体激光器的高亮度光纤耦合输出.中国激光34 11.2007,34(11),1472-1475. * |
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