CN101854031A - Laser device for realizing semiconductor laser beam coupling of parallel plate prism combination - Google Patents
Laser device for realizing semiconductor laser beam coupling of parallel plate prism combination Download PDFInfo
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- CN101854031A CN101854031A CN 201010161499 CN201010161499A CN101854031A CN 101854031 A CN101854031 A CN 101854031A CN 201010161499 CN201010161499 CN 201010161499 CN 201010161499 A CN201010161499 A CN 201010161499A CN 101854031 A CN101854031 A CN 101854031A
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Abstract
The invention provides a laser device for realizing semiconductor laser beam coupling of a parallel plate prism combination, which consists of two semiconductor laser alternating arrays, two fast axis collimation lenses, two slow axis collimation lenses, a parallel plate glass prism stack, a beam expanding system consisting of two lens pillars and a focusing system consisting of balsaming lenses, wherein all the parts are arranged in parallel; and the invention realizes the high power of kilowatt laser, and overcomes the defects of large volume, low energy efficiency, short service life and the like of a chemical laser, a CO2 laser, a lamp pump and a semiconductor laser pumping the Nd:YAG fundamental frequency of which is 1064nm. The power of the high-power semiconductor laser light source related by the invention can be output in hectowatt to kilowatt and finally can be coupled with an optical fiber. Under the condition of the same power, the volume of the laser device is 1/3-1/10 of that of other lasers, the operation cost is 1/4-1/20 of that of the other lasers, and the service life can be over 10000 hours which is 5-10 times of that of the other lasers.
Description
Technical field
The present invention relates to the laser aid that parallel flat prism group realizes the semiconductor laser coupling.
Background technology
Laser with respect to other type, semiconductor laser (LD) has that volume is little, in light weight, efficient is high, the life-span is long, direct advantage such as current-modulation, therefore used widely in various fields such as industry, military affairs, nuclear energy, communications, the requirement of noise spectra of semiconductor lasers power output and brightness is also more and more higher simultaneously.By the semiconductor laser light emitting unit being integrated into one dimensional linear array (being Bar) and a plurality of bar being stacked into repeatedly battle array (Stack), can improve the power output of semiconductor laser effectively, but because the restriction of being dispelled the heat, semiconductor laser repeatedly battle array cannot pile up LD Bar is unconfined, can accomplish the lamination of 25 Bar in the world, continuous power output 2500w.Such power still can not satisfy the needs of industry to processing such as Metal Cutting, welding.This just requires to adopt suitable light beam coupling method, with the light beam coupling of a plurality of semiconductor laser arrays to same optical path, to improve power output and brightness.Adopt coupling technique that the light beam of a plurality of lasers is closed bundle and export more high power.Because semiconductor laser array is the linearly polarized light of height, the polarization coupled prism can be exported through light-beam forming unit the output of two semiconductor laser array light beam coupling again with light beam coupling to optical fiber.
Fig. 4 is that a kind of cube polarization coupled prism-coupled light beam of using is to realize output high power semiconductor lasers (H J Baker, J F Monjardin, P Kneip, D R Hall, 1.8kW diode laser system forfibre-delivery using brightness-enhanced diode stacks and a novel finalbeam-shaper[J] .SPIE Proc, 2008, Vol.6876).This device is with 90 ° of placements of first semiconductor laser 11 of the identical polarization state of same wavelength and second semiconductor laser 11 ' become, wherein, process half-wave plate 13 is with semiconductor laser 11 ' polarization direction half-twist, make it vertical with the polarization direction, then with cube polarization coupled prism 14 first semiconductor laser 11 and second semiconductor laser 11 ' laser coupled become beam of laser output, pass through plano-convex cylindrical mirror (15 again, 16,17), speculum (18,18 '), the combination of planoconvex spotlight 19 and plano-concave cylindrical mirror (20,21) assembles output.This structure can realize closing bundle, and shortcoming is: (1) two-laser vertically becomes 90 ° of placements, regulates complicated; (2) adopt cube polarization coupled prism, middle cemented surface makes the glue fusing in long-time high power uses, efficient is reduced; (3), directly do not place half-wave plate rotatory polarization direction efficient and reduce through collimation because the angle of divergence of semiconductor laser own is bigger.(4) power output is limited, only 2 laser coupling outputs.
Summary of the invention
The purpose of this invention is to provide the laser aid that a kind of parallel flat prism group realizes the semiconductor laser coupling,, realize more high power and brightness output to overcome the scarce limit of above-mentioned prior art.
As shown in Figure 1, being constructed as follows of the laser aid of a kind of parallel flat prism group realization semiconductor laser provided by the invention coupling:
First semiconductor laser is battle array 1 repeatedly, repeatedly battle array 1 ' the parallel placement arranged side by side of second semiconductor laser, first fast axis collimation lens 2, second fast axis collimation lens 2 ' and first slow axis collimation prism 3, second slow axis collimation prism 3 ' places repeatedly battle array 1 of the half first conductor laser respectively in turn, second semiconductor laser is battle array 1 ' back repeatedly, through semiconductor laser repeatedly battle array 1 and semiconductor laser repeatedly the laser of battle array 1 ' respectively through first fast axis collimation lens 2, second fast axis collimation lens 2 ' and first slow axis collimation prism 3, second slow axis collimation prism 3 ' collimates, to reduce fast and slow axis directional divergence angle, be incident to parallel flat edge glass stack 4 behind the collimation, parallel plate glass edge glass stack 4 places first slow axis collimation prism 3, second slow axis collimation prism 3 " back; be equipped with the beam-expanding system of post lens (5,6) composition and the focusing system 7 that balsaming lens is formed thereafter in turn;
Described parallel plate glass edge glass stack 4 is made up of two groups of parallel plate glass prisms that are 90 ° of angles, an inner plane angle of each the parallel flat prism in every group of parallel plate glass prism is 45 ° (as shown in Figure 2), the orientation of parallel plate glass prism is identical, parallel and equidistant arrangement;
Through semiconductor laser battle array 1 and the semiconductor laser laser of battle array 1 ' repeatedly repeatedly, be incident to parallel flat prism group 4 through first fast axis collimation lens 2, second fast axis collimation lens 2 ' and first slow axis collimation prism 3, second slow axis collimation prism 3 ' after collimating respectively, surface, inside at parallel plate glass edge glass stack 4 is reflected, realize transmission at last, two bundles are swashed combiner, assemble output through the focusing system 7 that the beam-expanding system and the balsaming lens of post lens (5,6) composition are formed.
Described first semiconductor laser changes, and repeatedly battle array 1 ' is just the same for battle array 1 and second semiconductor laser, all is to be stacked by a plurality of bar to form.
Beneficial effect: a kind of parallel flat prism group provided by the invention realizes the laser aid of semiconductor laser coupling, has realized that high-power, the high brightness high-quality of multikilowatt laser directly exported, and can directly apply in the field of laser processing.It is in light weight in addition, volume is little, electro-optical efficiency is high, the life-span is long, has overcome chemical laser, CO
2Laser, the shortcoming that the Nd:YAG fundamental frequency 1064nm equal-volume of lamp pump and semiconductor laser pumping is big, energy efficiency is low, the life-span is short etc., it is one of main developing direction of following field of laser processing, the high-power semiconductor laser light source power that the present invention relates to can reach hectowatt grade even last kilowatt output, but final coupled into optical fibres, under the identical situation of power output, the semiconductor laser volume is 1/3～1/10 of other lasers, operation cost is 1/4～1/20, and the life-span is that 5～10 times of other lasers reached more than 10000 hours.
Description of drawings
Fig. 1 is a multikilowatt high-power semiconductor laser beam merging apparatus structural representation.
Fig. 2 is parallel plate glass prism structure figure.
Fig. 3 is cut apart the rearrangement schematic diagram through closing light beams for the first time.
Fig. 4 is existing laser beam merging apparatus structural representation.
Embodiment
First semiconductor laser is battle array 1 repeatedly, repeatedly battle array 1 ' the parallel placement arranged side by side of second semiconductor laser, first fast axis collimation lens 2, second fast axis collimation lens 2 ' and first slow axis collimation prism 3, second slow axis collimation prism 3 ' places repeatedly battle array 1 of the half first conductor laser respectively in turn, second semiconductor laser is battle array 1 ' back repeatedly, through semiconductor laser repeatedly battle array 1 and semiconductor laser repeatedly the laser of battle array 1 ' respectively through first fast axis collimation lens 2, second fast axis collimation lens 2 ' and first slow axis collimation prism 3, second slow axis collimation prism 3 ' collimates, to reduce fast and slow axis directional divergence angle, be incident to parallel flat edge glass stack 4 behind the collimation, parallel plate glass edge glass stack 4 places first slow axis collimation prism 3, second slow axis collimation prism, 3 ' back, in turn be equipped with the beam-expanding system of post lens (5,6) composition and the focusing system 7 that balsaming lens is formed thereafter;
Described parallel plate glass edge glass stack 4 is made up of two groups of parallel plate glass prisms that are 90 ° of angles, an inner plane angle of each the parallel flat prism in every group of parallel plate glass prism is 45 ° (as shown in Figure 2), the orientation of parallel plate glass prism is identical, parallel equidistant arrangement;
Through semiconductor laser battle array 1 and the semiconductor laser laser of battle array 1 ' repeatedly repeatedly, be incident to parallel flat prism group 4 through first fast axis collimation lens 2, second fast axis collimation lens 2 ' and first slow axis collimation prism 3, second slow axis collimation prism 3 ' after collimating respectively, surface, inside at parallel plate glass edge glass stack 4 is reflected, realize transmission at last, two bundles are swashed combiner, assemble output through the focusing system 7 that the beam-expanding system and the balsaming lens of post lens (5,6) composition are formed.
Described first semiconductor laser changes, and repeatedly battle array 1 ' is just the same for battle array 1 and second semiconductor laser, all is to be stacked by a plurality of bar to form.
Described parallel flat prism group realizes the laser aid of semiconductor laser coupling, adopts the semiconductor laser light resource of wavelength 808nm or 980nm.Semiconductor laser repeatedly battle array is made up of 10 bar, spacing 1.9mm between the Bar, each is battle array power output 800W (every bar power output 80W) repeatedly, adopt two 808nm repeatedly battle array power amount to 1600W, again through axle and slow axis collimating lens collimate after parallel flat prism group realizes the repeatedly coupling of battle array of two 808nm semiconductor lasers soon, focus on optical fiber output after expand bundle, power can reach more than the 1000W.
Described two groups of parallel plate glass prisms are formed by 10 parallel plate glass prisms, and every parallel plate glass prism rib thickness is 0.95mm, and spacing was 1.9mm between parallel flat prism rib was arranged along the laser quick shaft direction.
Claims (1)
1. parallel flat prism group realizes the laser aid of semiconductor laser coupling, it is characterized in that, it is constructed as follows: first semiconductor laser is battle array (1) repeatedly, repeatedly battle array (1 ') the parallel placement arranged side by side of second semiconductor laser, first fast axis collimation lens (2), second fast axis collimation lens (2 ') and first slow axis collimation prism (3), second slow axis collimation prism (3 ') places repeatedly battle array (1) of the half first conductor laser respectively in turn, second semiconductor laser is the back of battle array (1 ') repeatedly, parallel plate glass edge glass stack (4) places first slow axis collimation prism (3), second slow axis collimation prism (3 ') back, in turn be equipped with the beam-expanding system of post lens (5,6) composition and the focusing system (7) that balsaming lens is formed thereafter;
Described parallel plate glass edge glass stack (4) is made up of two groups of parallel plate glass prisms that are 90 ° of angles, an inner plane angle of each the parallel flat prism in every group of parallel plate glass prism is 45 °, the orientation of parallel plate glass prism is identical, parallel and equidistant arrangement;
The laser of battle array (1 ') that the process semiconductor laser changes gust (1) and semiconductor laser changes, be incident to parallel flat prism group (4) through first fast axis collimation lens (2), second fast axis collimation lens (2 ') and first slow axis collimation prism (3), second slow axis collimation prism (3 ') after collimating respectively, surface, inside at parallel plate glass edge glass stack (4) is reflected, realize transmission at last, two bundles are swashed combiner, assemble output through the focusing system (7) that the beam-expanding system and the balsaming lens of post lens (5,6) composition are formed;
Described first semiconductor laser changes gust (1) and second semiconductor laser changes, and battle array (1 ') is just the same, all is to be stacked by a plurality of bar to form.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102324697A (en) * | 2011-09-22 | 2012-01-18 | 西安炬光科技有限公司 | Interpolation-arrangement beam-combining method for semiconductor laser and high-power semiconductor laser |
| CN102520524A (en) * | 2011-12-20 | 2012-06-27 | 西安炬光科技有限公司 | High-power semiconductor laser light source system for laser machining |
| CN102751660A (en) * | 2012-05-22 | 2012-10-24 | 中国科学院半导体研究所 | Device for improving filling coefficient of semiconductor laser stacks in fast axis direction by means of glass sheet set |
| WO2013010479A1 (en) * | 2011-07-21 | 2013-01-24 | Oclaro Technology Limited | An optical system and a method for improving an optical system |
| CN103364957A (en) * | 2013-07-10 | 2013-10-23 | 四川大学 | Device and method for combining obliquely, rotatably and symmetrically distributed even-number multiple beams through FP (Fabry-Perot) cavity |
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| CN105896311A (en) * | 2016-06-22 | 2016-08-24 | 长春德信光电技术有限公司 | White light laser based on semiconductor laser beam combination technique |
| CN110441200A (en) * | 2018-05-04 | 2019-11-12 | 长沙青波光电科技有限公司 | A kind of laser measuring device for measuring |
| CN110441199A (en) * | 2018-05-04 | 2019-11-12 | 长沙青波光电科技有限公司 | A kind of laser measuring device for measuring |
| WO2020098413A1 (en) * | 2018-11-14 | 2020-05-22 | 西安炬光科技股份有限公司 | Pumping module and solid-state laser having same |
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| WO2013010479A1 (en) * | 2011-07-21 | 2013-01-24 | Oclaro Technology Limited | An optical system and a method for improving an optical system |
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| CN102520524B (en) * | 2011-12-20 | 2015-08-26 | 西安炬光科技有限公司 | A kind of high-power semiconductor laser source system for Laser Processing |
| CN102520524A (en) * | 2011-12-20 | 2012-06-27 | 西安炬光科技有限公司 | High-power semiconductor laser light source system for laser machining |
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| CN105659451B (en) * | 2013-10-18 | 2019-06-04 | 法国圣戈班玻璃厂 | Modular laser device device |
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| KR102257001B1 (en) | 2013-10-18 | 2021-05-27 | 쌩-고벵 글래스 프랑스 | Modular laser apparatus |
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| TWI643690B (en) * | 2013-10-18 | 2018-12-11 | 法國聖戈本玻璃公司 | Modular laser apparatus |
| CN105896311B (en) * | 2016-06-22 | 2018-09-11 | 长春德信光电技术有限公司 | A kind of white light laser closing beam technology based on semiconductor laser |
| CN105896311A (en) * | 2016-06-22 | 2016-08-24 | 长春德信光电技术有限公司 | White light laser based on semiconductor laser beam combination technique |
| CN110441200A (en) * | 2018-05-04 | 2019-11-12 | 长沙青波光电科技有限公司 | A kind of laser measuring device for measuring |
| CN110441199A (en) * | 2018-05-04 | 2019-11-12 | 长沙青波光电科技有限公司 | A kind of laser measuring device for measuring |
| WO2020098413A1 (en) * | 2018-11-14 | 2020-05-22 | 西安炬光科技股份有限公司 | Pumping module and solid-state laser having same |
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Open date: 20101006 |