CN101854029A - Semiconductor laser light supply apparatus for laser cladding - Google Patents

Semiconductor laser light supply apparatus for laser cladding Download PDF

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CN101854029A
CN101854029A CN 201010161479 CN201010161479A CN101854029A CN 101854029 A CN101854029 A CN 101854029A CN 201010161479 CN201010161479 CN 201010161479 CN 201010161479 A CN201010161479 A CN 201010161479A CN 101854029 A CN101854029 A CN 101854029A
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laser
light
semiconductor laser
translation
parallel flat
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顾媛媛
王峙皓
甘露
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CHANGCHUN DEXIN PHOTOELECTRIC TECHNOLOGY CO LTD
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CHANGCHUN DEXIN PHOTOELECTRIC TECHNOLOGY CO LTD
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Abstract

The invention relates to a semiconductor laser light supply apparatus for laser cladding, which comprises a telescope beam-expanding system, a focusing system (9) consisting of a balsaming lens and an optical fiber, wherein the telescope beam-expanding system comprises a semiconductor laser stack (1), a fast axis collimating system (2), a slow axis collimating system (3), a cylinder lens array (4), a beam fast axis translation system, a beam slow axis translation system, and cylinder lenses (7 and 8) which are arranged in sequence. The invention has the advantages of light weight, small volume, high electronic-optic conversion efficiency and long service life; under the condition of the same output power, the apparatus is 1/3-1/10 of other lasers in volume, is 1/4-1/20 of other lasers in operating costs and is 5-10 times of other lasers in service life and reaches over 20000 hours. The semiconductor laser light supply apparatus for laser cladding realizes high-power, high-light and high-quality direct input of kilowatt-level laser and can be directly applied to laser processing field.

Description

Semiconductor laser light supply apparatus for laser cladding
Technical field
The invention belongs to field of laser processing, relate to semiconductor laser light supply apparatus for laser cladding.
Background technology
Because high-power (power semiconductor laser on tens watts is referred to as high-power) semiconductor laser has advantages such as volume is little, in light weight, efficient is high, the life-span is long, be widely used in fields such as laser processing (punching, cutting, welding, Surface Machining, material modification etc.), laser medicine (diagnosis, treatment, operation, beauty treatment etc.), laser display and scientific research, become the comprehensive new and high technology that the new century development is fast, achievement is many, the subject infiltration is wide, range of application is big.
Laser melting coating is complicated physics, the chemical metallurgy process of a Fast Heating away from equilibrium state, cooling fast, and the laser power of employing is higher, and heating and cooling speed all is exceedingly fast: the size in molten bath is less simultaneously, extreme temperatures.
Adopt CO at present in the laser melting coating more 2Laser, the Nd:YAG laser of the fundamental frequency 1064nm of lamp pump and semiconductor laser pumping.
CO 2Laser is converted into laser energy by the heat energy with burning gases, realizes MW class output, but energy efficiency very low (1%-2%).Air supply system is heavy.
Solid state laser, lamp pump Nd:YAG laser electro-optical efficiency has only 3%, and in 1000 hours life-spans, efficient is low, the heat radiation difficulty.Though the solid state laser of diode-end-pumped (DPL) is higher than lamp pump solid state laser, volume also obviously reduces.But its electro-optical efficiency is still lower, only is equivalent to the 1/3-1/2 of semiconductor laser efficient.
As table 1 (John M.Haake*and Mark S.Zediker Nuvonyx, Inc.Heat Treating and Cladding Operations with High-PowerDiode Lasers.Proceedings of SPIE Vol.5706 (SPIE, Bellingham, WA, 2005) set forth the performance difference of lamp pump YAG laser and high-power semiconductor laser fiber coupling module.
Table 1
Figure GSA00000105011600021
Summary of the invention
The problem to be solved in the present invention directly is being applied to field of laser cladding with semiconductor laser light resource, and the metal parts that resistance to wear and corrosion resistance are had relatively high expectations carries out the part or applies on a large scale, is an important application of semiconductor laser work in-process.Laser applies with alloying higher to power requirement, and not harsh to the beam quality requirement, semiconductor laser can satisfy its requirement to power and beam quality.
As shown in Figure 1, semiconductor laser light supply apparatus for laser cladding of the present invention, repeatedly battle array 1, fast axis collimation system 2, slow axis colimated light system 3, cylindrical lens array 4, beam fast axis translation system, light beam slow axis translation system, post lens (7,8) are formed focusing system 9 and the optical fiber 10 that look in the distance beam-expanding system and balsaming lens form and are formed by the semiconductor laser of arranging in turn;
Described semiconductor laser repeatedly battle array 1 is piled up by a plurality of bar and forms (the semiconductor laser light emitting unit is integrated into one dimensional linear array appellation Bar, and a plurality of bar are stacked into repeatedly battle array (Stack));
Described cylindrical lens array 4 is a cylindrical lens array, its length dimension and semiconductor laser bar are measure-alike, height dimension and semiconductor laser be battle array 1 measure-alike repeatedly, the size of width to guarantee to make semiconductor laser repeatedly the light beam of battle array 1 can be separated into parallel two bundle laser beams along slow-axis direction;
Described beam fast axis translation system is to be made of first parallel flat 5 of two identical cuboid glass and second parallel flat 5 ', place between cylindrical lens array 4 and the beam shaping system, make the light beam that separates through cylindrical lens array 4 stagger into two bundle collimated laser beams along quick shaft direction by first parallel flat 5 and the 5 ' realization of second parallel flat;
Described light beam slow axis translation system is to be made of first parallel flat 6 of the glass that is parallelogram by two identical cross sections and second parallel flat 6 ', place between fast axle translation system and the beam-expanding system, make and behind too fast axle translation system, to stagger into two bundle collimated laser beams along quick shaft direction, along slow-axis direction parallel translation takes place again, the central ray of the two light beams after the parallel translation in one plane, realize the even distribution (as shown in Figure 2) of fast and slow axis light beam, passing through post lens (7,8) at last forms focusing system 9 that look in the distance beam-expanding system and balsaming lens form and assembles to optical fiber 10 transmission and realize the output of multikilowatt power;
Described first parallel flat 5, second parallel flat 5 ', first parallel flat 6, second parallel flat 6 ' are the beam shaping element that utilizes refraction principle to make; The beam fast axis translation system be used for through cylindrical lens array 4 separating light beams along parallel translation one segment distance of quick shaft direction, light beam slow axis translation system is used for and will realizes light beam translation along slow axis through too fast axle translation system translation light beam, forms the beam center light parallel laser beam of two bundles in one plane;
Beam fast axis translation system and light beam slow axis translation system realize that to laser beam the distance of translation all is to follow following translation distance formula (a):
d = t 1 sin i 1 ( 1 - n cos i 1 n ′ 2 - n 2 sin 2 i 1 )
In the formula, d is the side-play amount of light refraction, and n is a medium refraction index, and n ' is an optical glass refractive index, t 1Be glass material thickness, i 1Be angle of incidence of light.
Introduce the laser transmission path below: the process semiconductor laser is the laser of battle array 1 repeatedly, enters cylindrical lens array 4 through fast axis collimation lens 2 and slow axis collimating lens 3 collimations after the angle of divergence with the reduction both direction; By the post lens image formation rule, cylindrical lens array 4 will be divided into two bundles through the semiconductor laser beam behind the fast and slow axis collimation as can be known, and the laser that is divided into two bundles enters described beam fast axis translation system and light beam slow axis translation system;
Described beam fast axis translation system is to be made of first parallel flat 5 of two identical cuboid glass and second parallel flat 5 ', place between cylindrical lens array 4 and the beam shaping system, make the light beam that separates through cylindrical lens array 4 stagger into two bundle collimated laser beams along quick shaft direction by first parallel flat 5 and the 5 ' realization of second parallel flat;
Described light beam slow axis translation system is to be made of first parallel flat 6 of the glass that is parallelogram by two identical cross sections and second parallel flat 6 ', place between fast axle translation system and the beam-expanding system, the number of parallel flat is by the number decision of laser bar, make and behind too fast axle translation system, to stagger into two bundle collimated laser beams along quick shaft direction, along slow-axis direction parallel translation takes place again, the central ray of the two light beams after the parallel translation in one plane, realize the even distribution of fast and slow axis light beam, passing through post lens (7,8) at last forms focusing system 9 that look in the distance beam-expanding system and balsaming lens form and assembles to optical fiber 10 transmission and realize the output of multikilowatt power.
Beneficial effect: semiconductor laser light supply apparatus for laser cladding provided by the invention, realized that high-power, the high brightness high-quality of multikilowatt laser directly exported, can directly apply in the field of laser processing.It is in light weight in addition, volume is little, electro-optical efficiency is high, the life-span is long, has overcome chemical laser, CO 2Laser, the shortcoming that the Nd:YAG fundamental frequency 1064nm equal-volume of lamp pump and semiconductor laser pumping is big, energy efficiency is low, the life-span is short etc., it is one of main developing direction of following field of laser processing, the high-power semiconductor laser light source power that the present invention relates to can reach hectowatt grade even last kilowatt output, but final coupled into optical fibres, under the identical situation of power output, the semiconductor laser volume is 1/3~1/10 of other lasers, operation cost is 1/4~1/20 of other lasers, and the life-span is that 5~10 times of other lasers reached more than 20000 hours.
Description of drawings
Fig. 1 is a multikilowatt industry cladding semicondcutor laser unit structural representation.
Fig. 2 through beam fast axis translation system and light beam slow axis translation system along quick shaft direction translation and slow axis translation light beam schematic diagram.
Embodiment
Embodiment 1 as shown in Figure 1, semiconductor laser light supply apparatus for laser cladding of the present invention, repeatedly battle array 1, fast axis collimation system 2, slow axis colimated light system 3, cylindrical lens array 4, beam fast axis translation system, light beam slow axis translation system, post lens (7,8) are formed focusing system 9 and the optical fiber 10 that look in the distance beam-expanding system and balsaming lens form and are formed by the semiconductor laser of arranging in turn;
Described semiconductor laser repeatedly battle array 1 is piled up by a plurality of bar and forms (the semiconductor laser light emitting unit is integrated into one dimensional linear array appellation Bar, and a plurality of bar are stacked into repeatedly battle array (Stack));
Described cylindrical lens array 4 is a cylindrical lens array, its length dimension and semiconductor laser bar are measure-alike, height dimension and semiconductor laser be battle array 1 measure-alike repeatedly, the size of width to guarantee to make semiconductor laser repeatedly the light beam of battle array 1 can be separated into parallel two bundle laser beams along slow-axis direction;
Described beam fast axis translation system is to be made of first parallel flat 5 of two identical cuboid glass and second parallel flat 5 ', place between cylindrical lens array 4 and the beam shaping system, make the light beam that separates through cylindrical lens array 4 stagger into two bundle collimated laser beams along quick shaft direction by first parallel flat 5 and the 5 ' realization of second parallel flat;
Described light beam slow axis translation system is to be made of first parallel flat 6 of the glass that is parallelogram by two identical cross sections and second parallel flat 6 ', place between fast axle translation system and the beam-expanding system, make and behind too fast axle translation system, to stagger into two bundle collimated laser beams along quick shaft direction, along slow-axis direction parallel translation takes place again, the central ray of the two light beams after the parallel translation in one plane, realize the even distribution (as shown in Figure 2) of fast and slow axis light beam, passing through post lens (7,8) at last forms focusing system 9 that look in the distance beam-expanding system and balsaming lens form and assembles to optical fiber 10 transmission and realize the output of multikilowatt power;
Described first parallel flat 5, second parallel flat 5 ', first parallel flat 6, second parallel flat 6 ' are the beam shaping element that utilizes refraction principle to make; The beam fast axis translation system be used for through cylindrical lens array 4 separating light beams along parallel translation one segment distance of quick shaft direction, light beam slow axis translation system is used for and will realizes light beam translation along slow axis through too fast axle translation system translation light beam, forms the beam center light parallel laser beam of two bundles in one plane;
Beam fast axis translation system and light beam slow axis translation system realize that to laser beam the distance of translation all is to follow following translation distance formula (a):
d = t 1 sin i 1 ( 1 - n cos i 1 n ′ 2 - n 2 sin 2 i 1 )
In the formula, d is the side-play amount of light refraction, and n is a medium refraction index, and n ' is an optical glass refractive index, t 1Be glass material thickness, i 1Be angle of incidence of light.
Introduce the laser transmission path below: the process semiconductor laser is the laser of battle array 1 repeatedly, enters cylindrical lens array 4 through fast axis collimation lens 2 and slow axis collimating lens 3 collimations after the angle of divergence with the reduction both direction; By the post lens image formation rule, cylindrical lens array 4 will be divided into two bundles through the semiconductor laser beam behind the fast and slow axis collimation as can be known, and the laser that is divided into two bundles enters described beam fast axis translation system and light beam slow axis translation system;
Described beam fast axis translation system is to be made of first parallel flat 5 of two identical cuboid glass and second parallel flat 5 ', place between cylindrical lens array 4 and the beam shaping system, make the light beam that separates through cylindrical lens array 4 stagger into two bundle collimated laser beams along quick shaft direction by first parallel flat 5 and the 5 ' realization of second parallel flat;
Described light beam slow axis translation system is to be made of first parallel flat 6 of the glass that is parallelogram by two identical cross sections and second parallel flat 6 ', place between fast axle translation system and the beam-expanding system, the number of parallel flat is by the number decision of laser bar, make and behind too fast axle translation system, to stagger into two bundle collimated laser beams along quick shaft direction, along slow-axis direction parallel translation takes place again, the central ray of the two light beams after the parallel translation in one plane, realize the even distribution of fast and slow axis light beam, passing through post lens (7,8) at last forms focusing system 9 that look in the distance beam-expanding system and balsaming lens form and assembles to optical fiber 10 transmission and realize the output of multikilowatt power;
Described semiconductor laser light resource is wavelength 808nm.Semiconductor laser repeatedly battle array is made up of 20 layers of bar, forms the repeatedly spacing 1.9mm between the bar of battle array of semiconductor laser, a battle array power output 1200W repeatedly, and semiconductor laser repeatedly battle array is provided with fast and slow axis collimating lens 2,3, makes the reduction of the outgoing semiconductor laser angle of divergence.Cylindrical lens array 4 is placed in fast and slow axis collimating lens 2,3 backs of semiconductor laser alternating array module 1, because the post lens only compress meridianal image surface, the semiconductor light beam of collimation output can be divided into two bundles, the laser that is divided into two bundles enters described beam fast axis system and light beam slow axis translation system, the beam fast axis translation system is used for the laser beam through cylindrical lens array 4 is realized the parallel translation of quick shaft direction that this distance is followed formula (a); Light beam slow axis translation system, realize the slow axis beam translation, this distance is also followed the even distribution that formula (a) is realized the fast and slow axis light beam, passes through post lens (7,8) at last and forms focusing system 9 that look in the distance beam-expanding system and balsaming lens form and assemble to optical fiber 10 transmission and realize the output of multikilowatt power.

Claims (1)

1. semiconductor laser light supply apparatus for laser cladding, it is characterized in that, repeatedly battle array (1), a fast axis collimation system (2), slow axis colimated light system (3), cylindrical lens array (4), beam fast axis translation system, light beam slow axis translation system, post lens (7,8) are formed focusing system (9) and optical fiber (10) composition that look in the distance beam-expanding system and balsaming lens are formed by semiconductor laser of arranging in turn for they;
Described semiconductor laser repeatedly battle array (1) is piled up by a plurality of bar and forms;
Described cylindrical lens array (4) is a cylindrical lens array, its length dimension and semiconductor laser bar are measure-alike, height dimension and semiconductor laser be battle array (1) measure-alike repeatedly, the size of width to guarantee to make semiconductor laser repeatedly the light beam of battle array (1) can be separated into parallel two bundle laser beams along slow-axis direction;
Described beam fast axis translation system is to be made of first parallel flat (5) of two identical cuboid glass and second parallel flat (5 '), place between cylindrical lens array (4) and the beam shaping system, make the light beam that separates through cylindrical lens array 4 stagger into two bundle collimated laser beams along quick shaft direction by first parallel flat (5) and second parallel flat (5 ') realization;
Described light beam slow axis translation system is to be made of first parallel flat (6) of the glass that is parallelogram by two identical cross sections and second parallel flat (6 '), place between fast axle translation system and the beam-expanding system, make and behind too fast axle translation system, to stagger into two bundle collimated laser beams along quick shaft direction, along slow-axis direction parallel translation takes place again, the central ray of the two light beams after the parallel translation in one plane, realize the even distribution of fast and slow axis light beam, passing through post lens (7,8) at last forms focusing system (9) that look in the distance beam-expanding system and balsaming lens form and assembles to optical fiber (10) and export;
Described first parallel flat (5), second parallel flat (5 '), first parallel flat (6), second parallel flat (6 ') are the beam shaping element that utilizes refraction principle to make; The beam fast axis translation system be used for through cylindrical lens array (4) separating light beam along parallel translation one segment distance of quick shaft direction, light beam slow axis translation system is used for and will realizes light beam translation along slow axis through too fast axle translation system translation light beam, forms the beam center light parallel laser beam of two bundles in one plane;
Beam fast axis translation system and light beam slow axis translation system realize that to laser beam the distance of translation all is to follow following translation distance formula (a):
d = t 1 sin i 1 ( 1 - n cos i 1 n ′ 2 - n 2 sin 2 i 1 )
In the formula, d is the side-play amount of light refraction, and n is a medium refraction index, and n ' is an optical glass refractive index, t 1Be glass material thickness, i 1Be angle of incidence of light.
CN 201010161479 2010-05-04 2010-05-04 Semiconductor laser light supply apparatus for laser cladding Pending CN101854029A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102324699A (en) * 2011-09-22 2012-01-18 西安炬光科技有限公司 A kind of high-power semiconductor laser light-source system that is used for laser processing
EP2708621A1 (en) * 2012-05-22 2014-03-19 Shandong Energy Machinery Group Han's Remanufacturing Co. Ltd. Laser cladding method
CN107483112A (en) * 2011-08-26 2017-12-15 三流明公司 High speed FSO
CN109768467A (en) * 2019-03-28 2019-05-17 吉林省长光瑞思激光技术有限公司 A kind of semiconductor laser optical path adjustment equipment
US10938476B2 (en) 2009-02-17 2021-03-02 Lumentum Operations Llc System for optical free-space transmission of a string of binary data
CN112495941A (en) * 2020-11-10 2021-03-16 江苏大学 Remote laser cleaning system
US11095365B2 (en) 2011-08-26 2021-08-17 Lumentum Operations Llc Wide-angle illuminator module

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CN1611969A (en) * 2003-10-30 2005-05-04 翰兹-利索兹切科专利管理有限公司及两合公司 Assembly and device for optical beam transformation
CN101144909A (en) * 2007-10-25 2008-03-19 中国科学院长春光学精密机械与物理研究所 Surface array semiconductor laser light beam shaping device
CN101609212A (en) * 2009-07-21 2009-12-23 中国科学院长春光学精密机械与物理研究所 The shaping methods of noise spectra of semiconductor lasers outgoing beam

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1611969A (en) * 2003-10-30 2005-05-04 翰兹-利索兹切科专利管理有限公司及两合公司 Assembly and device for optical beam transformation
CN101144909A (en) * 2007-10-25 2008-03-19 中国科学院长春光学精密机械与物理研究所 Surface array semiconductor laser light beam shaping device
CN101609212A (en) * 2009-07-21 2009-12-23 中国科学院长春光学精密机械与物理研究所 The shaping methods of noise spectra of semiconductor lasers outgoing beam

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10938476B2 (en) 2009-02-17 2021-03-02 Lumentum Operations Llc System for optical free-space transmission of a string of binary data
US11405105B2 (en) 2009-02-17 2022-08-02 Lumentum Operations Llc System for optical free-space transmission of a string of binary data
US11121770B2 (en) 2009-02-17 2021-09-14 Lumentum Operations Llc Optical laser device
US11075695B2 (en) 2009-02-17 2021-07-27 Lumentum Operations Llc Eye-safe optical laser system
CN107483112B (en) * 2011-08-26 2020-12-08 三流明公司 System and method for high speed free space optical communication
CN107483112A (en) * 2011-08-26 2017-12-15 三流明公司 High speed FSO
US11095365B2 (en) 2011-08-26 2021-08-17 Lumentum Operations Llc Wide-angle illuminator module
US11451013B2 (en) 2011-08-26 2022-09-20 Lumentum Operations Llc Wide-angle illuminator module
CN102324699A (en) * 2011-09-22 2012-01-18 西安炬光科技有限公司 A kind of high-power semiconductor laser light-source system that is used for laser processing
AU2012380415B2 (en) * 2012-05-22 2015-09-10 Shandong Energy Machinery Group Han's Remanufacture Co., Ltd Laser cladding method
EP2708621A4 (en) * 2012-05-22 2014-12-03 Shandong Energy Machinery Group Han S Remfg Co Ltd Laser cladding method
EP2708621A1 (en) * 2012-05-22 2014-03-19 Shandong Energy Machinery Group Han's Remanufacturing Co. Ltd. Laser cladding method
CN109768467A (en) * 2019-03-28 2019-05-17 吉林省长光瑞思激光技术有限公司 A kind of semiconductor laser optical path adjustment equipment
CN112495941A (en) * 2020-11-10 2021-03-16 江苏大学 Remote laser cleaning system

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