CN109768467A - A kind of semiconductor laser optical path adjustment equipment - Google Patents
A kind of semiconductor laser optical path adjustment equipment Download PDFInfo
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- CN109768467A CN109768467A CN201910243337.8A CN201910243337A CN109768467A CN 109768467 A CN109768467 A CN 109768467A CN 201910243337 A CN201910243337 A CN 201910243337A CN 109768467 A CN109768467 A CN 109768467A
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Abstract
The invention discloses a kind of semiconductor laser optical paths to adjust equipment, comprising: for the laser of semiconductor laser chip to be exported to the mirror assembly of encapsulating housing in the horizontal direction;Wherein, semiconductor laser chip is fixedly connected with the bottom plate of encapsulating housing, and the side plate of encapsulating housing and bottom plate are structure as a whole;Mirror assembly includes that the reflecting mirror fixed on bracket is arranged in fixed bracket and at least two;Relative angle between each reflecting mirror is adjustable;The laser that semiconductor laser chip issues can be reflected between each reflecting mirror and be projected from horizontal direction after fast axis collimation mirror and slow axis collimating mirror.Only with multiple reflecting mirrors in the application, the relative angle between each reflecting mirror is made to reach requirement by adjusting reflecting mirror, and high request is not proposed from machining accuracy, the equipment cost of laser shaping enable largely to reduce, thus the cost for reducing the production of semiconductor laser and using.
Description
Technical field
The present invention relates to semiconductor laser technique fields, adjust equipment more particularly to a kind of semiconductor laser optical path.
Background technique
As the pumping source of optical fiber laser, semiconductor laser is widely used in optical fiber laser.In industry
The moisture-resistant degree ability of noise spectra of semiconductor lasers proposes very high requirement in, if laser sealing is bad to easily cause half
The damage of laser chip in conductor laser shell.Semiconductor laser shell is mainly made of bottom plate, side frame, upper cover three,
Semiconductor laser chip is welded on bottom plate, makes semiconductor laser chip be in the space of opposing seal by side frame and upper cover.
Since semiconductor laser chip is needed by just can be applied to optical fiber laser after beam shaping, and the presence of side plate hinders
The transmission of laser, so that beam shaping is difficult to carry out.
The beam shaping of semiconductor laser light resource mainly collimates the fast axle and slow axis hot spot of light source.Due to half
The initial fast axle of conductor Laser and slow axis divergence are very big (40 ° of usual fast axle, 10 ° of slow axis), it is therefore desirable to fast axle axis collimating mirror and
Initial radiation angle is compressed to milliradian (mrad) magnitude by slow axis axis collimating mirror.As shown in Figure 1, current semiconductor laser chip 1
Adjustment be by laser by after fast axle axis collimating mirror 2 and slow axis axis collimating mirror 3, then expose to rhombic prism 4 and by rectangle rib
The reflective surface of mirror 4 is exported to beam quality analysis instrument 5.
But due to one of this adjustment mode, component most important for laser shaping, the required precision of rhombic prism
It is very high, so that the cost of laser shaping increases.
Summary of the invention
The object of the present invention is to provide a kind of semiconductor laser optical path adjust equipment, solve existing laser shaping at
This high problem.
In order to solve the above technical problems, the present invention provides a kind of semiconductor laser optical path adjustment equipment, comprising: being used for will
The laser of semiconductor laser chip exports the mirror assembly of encapsulating housing in the horizontal direction;
Wherein, the semiconductor laser chip is fixedly connected with the bottom plate of the encapsulating housing, and the encapsulating housing
Side plate and bottom plate are structure as a whole;
The mirror assembly includes fixed bracket and at least two are arranged in reflecting mirror on the fixed bracket;Respectively
Relative angle between a reflecting mirror is adjustable;The laser that the semiconductor laser chip issues is by fast axis collimation mirror and slowly
After axis collimating mirror, it can reflect between each reflecting mirror and project from horizontal direction.
Wherein, the quantity of the reflecting mirror is two;And two reflecting mirrors can tune to and be parallel to each other.
Wherein, it is 45 ° that two reflecting mirrors, which can tune to the angle between horizontal plane,.
Wherein, the quantity of the reflecting mirror is two, and two reflecting mirrors, which can tune to, to be mutually perpendicular to and and horizontal plane
Between angle be 45 degree.
Wherein, the reflecting mirror includes the first reflecting mirror and the second reflecting mirror, wherein first reflecting mirror is fixed on institute
It states on fixed bracket, adjusting rod is fixedly connected on second reflecting mirror, the adjusting rod is also connected with described for adjusting
The six-dimensional adjusting support of second mirror angle.
Wherein, the fixed bracket includes the vertical bar of upper top and lower bottom part and the connection upper top and lower bottom part;
Wherein, first reflecting mirror is fixed on the lower bottom part, and mirror surface is in obliquely 45 ° of angles with horizontal plane, is made
The laser that issues of the semiconductor laser chip can with after on 45 ° of incident angles to first reflecting mirror straight up
Reflex to second reflecting mirror;
Second reflecting mirror is arranged in the upper top, and can tune to mirror surface obliquely with horizontal plane in 45 °, so that
It is reflected with 45 ° of incident angles and from horizontal direction by the laser that first reflecting mirror reflects.
Wherein, the six-dimensional adjusting support can rotate second reflecting mirror using X-axis, Y-axis, Z axis as rotation center respectively
It adjusts, and rotating adjusting angular range is -10 °~10 °.
Semiconductor laser optical path provided by the present invention adjusts equipment, is swashed by multiple reflecting mirror multiple reflections semiconductors
The laser that optical chip is launched is whole to be carried out by beam quality analysis instrument to laser to export laser from encapsulating housing
Shape in actual operation, can be by adjusting each reflection because the relative angle between each reflecting mirror is adjustable repeatedly
The mirror surface direction of mirror, so that the final optical path of laser meets shaping requirement.Compared with the existing technology using rhombic prism to laser
It carries out in derived technical solution, it is very high to the parallel accuracy requirement of two reflectings surface being parallel to each other of rhombic prism, it leads
Laser out can be only achieved the requirement of laser shaping, so that the cost of laser shaping is very high.And only with more in the application
A reflecting mirror makes the relative angle between each reflecting mirror reach requirement by adjusting reflecting mirror, and not from machining accuracy
Upper proposition high request, enables the equipment cost of laser shaping largely to reduce, to reduce semiconductor laser
Production and the cost that uses.
Detailed description of the invention
It, below will be to embodiment or existing for the clearer technical solution for illustrating the embodiment of the present invention or the prior art
Attached drawing needed in technical description is briefly described, it should be apparent that, the accompanying drawings in the following description is only this hair
Bright some embodiments for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the light path schematic diagram for exporting laser in the prior art;
Fig. 2 is the structural schematic diagram that semiconductor laser optical path provided in an embodiment of the present invention adjusts equipment;
Fig. 3 is the road schematic diagram of export laser light provided in an embodiment of the present invention;
Fig. 4 is that another embodiment of the present invention provides the light path schematic diagrams of export laser;
Fig. 5 is the structural schematic diagram of reflection subassembly provided in an embodiment of the present invention.
Specific embodiment
In order to enable those skilled in the art to better understand the solution of the present invention, with reference to the accompanying drawings and detailed description
The present invention is described in further detail.Obviously, described embodiments are only a part of the embodiments of the present invention, rather than
Whole embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work premise
Under every other embodiment obtained, shall fall within the protection scope of the present invention.
As shown in Fig. 2, Fig. 2 is the structural representation provided in an embodiment of the present invention moved body laser optical path to and adjust equipment
Figure, the equipment can specifically include:
For the laser of semiconductor laser chip 1 to be exported to the mirror assembly 6 of encapsulating housing 7 in the horizontal direction;
Wherein, semiconductor laser chip 1 is arranged inside encapsulating housing 7, and semiconductor laser chip 1 is fixed on encapsulating shell
On the bottom plate of body 7.In order to avoid the moisture of external environment, the bottom plate and side plate of encapsulating housing 7 are often integrally formed structure,
And top plate is then to be used for final encapsulation semiconductor laser chip 1 between side plate for separate structure.
And semiconductor laser chip 1 is the chip for launching laser, and its direction for emitting laser is and encapsulating shell
The bottom plate of body 7 is parallel, the side of directive encapsulating housing 7.But the bottom plate of encapsulating housing 7 is fixed in semiconductor laser chip 1
After upper, and by the encapsulation of the top plate of encapsulating housing 1 before, need first to carry out the laser that semiconductor laser chip 1 generates whole
Shape, it is necessary to which the laser for issuing semiconductor laser chip 1 is after fast axis collimation mirror 2 and slow axis collimating mirror 3, from encapsulating shell
It is exported in body 7, that is to say and projected from encapsulating housing 7.
The laser that semiconductor laser chip 1 issues is led from encapsulating housing 7 by mirror assembly 6 in the present embodiment
Out.Specifically, which may include:
Fixed bracket and at least two reflecting mirror on fixed bracket, and the opposite folder between each reflecting mirror are set
Angle is adjustable.
So, the laser that semiconductor laser chip 1 issues is by fast axis collimation mirror 2 and slow axis collimating mirror 3 and then directive
Reflecting mirror in mirror assembly 6, and the roundtrip between each reflecting mirror, it is final to project to except encapsulating housing 7.
Specifically, can referring to figs. 2 and 3, Fig. 3 is export laser optical path schematic diagram provided in an embodiment of the present invention.Fig. 2
It is using the mirror assembly 6 including the first reflecting mirror 64 and the second reflecting mirror 62 in Fig. 3.Semiconductor laser chip 1
The laser of generation successively after fast axis collimation mirror 2, slow axis collimating mirror 3, is incident to the first reflecting mirror 64, by the first reflecting mirror 64
The second reflecting mirror 62 is reflexed to, beam quality analysis instrument 5 is finally reflexed to by the second reflecting mirror 62, fast and slow axis collimation can be measured
Hot spot parameter afterwards.
It should be noted that the light of laser is all finally derived from level in Fig. 2 and Fig. 3.Because of current routine techniques
In, laser is horizontally oriented export encapsulating housing 7, other are also to be arranged based on this to the relevant device of laser shaping
, therefore in order not to make the adjustment of more flexible to existing equipment, final is also to export laser from horizontal direction, still
For theoretically, as long as laser is exported from encapsulating housing 7.
Fig. 1 is the light channel structure schematic diagram for exporting laser in the prior art, is that there are two reflections using tool in the prior art
The transparent rhombic prism 4 in face exports laser, as shown in Figure 1, the laser that semiconductor laser chip 1 generates passes through fast axle
After collimating mirror 2, slow axis collimating mirror 3, in vertical incidence to rhombic prism 4, and by reaching second after first reflective surface
Reflecting surface, terminal level project.
In the prior art, laser level is projected, it is desirable that keep absolute between two reflectings surface of rhombic prism 4 and put down
Row, this is very high to the processing technology requirement of rhombic prism 4, so that the use cost of rhombic prism 4 is also very high, thus
Improve the cost of laser shaping consuming.
By multiple reflecting mirrors by laser roundtrip in the present embodiment, and the adjustable angle between each reflecting mirror, that
, so that it may guarantee the export of laser terminal level, such as Fig. 1 and Fig. 2 institute by adjusting the relative angle between each reflecting mirror
Show, so that it may by adjusting so that being parallel to each other between two reflecting mirrors, and reflecting mirror uses common reflecting mirror, is not necessarily to
Make excessive requirement to processing technology, this largely reduces the use cost of equipment, and then reduces the system of laser
Cause this.
As previously mentioned, including at least two reflecting mirrors in mirror assembly in the present invention, and between each reflecting mirror
Relative angle is adjustable.But in practical applications, embodiment the simplest is swashed only with two reflecting mirror reflection export
Light, but the relative angle between each reflecting mirror may exist a variety of situations.It is just illustrated below with specific embodiment.
In a specific embodiment of the invention, it can specifically include:
The quantity of reflecting mirror is two, and two reflecting mirrors can tune to and be parallel to each other.
Specifically, the index path of Fig. 1 and Fig. 2 be can refer to.In the above-described embodiments, the reflection two being parallel to each other
The embodiment of mirror has carried out for example, not repeating herein.
Further, two angles between reflecting mirror and horizontal plane can tune to 45 °.
It should be noted that in the actual operation process, two angles between reflecting mirror and horizontal plane are not necessarily
Be adjusted to 45 °, as long as and guarantee to be parallel to each other between two reflecting mirrors, and one incident mirror mirror of laser alignment is obliquely
And second mirror mirror is obliquely.
In another embodiment of the present invention, it can specifically include
The quantity of the reflecting mirror is two, and two reflecting mirrors, which can tune to, to be mutually perpendicular to and press from both sides between horizontal plane
Angle is 45 degree.
Specifically, it can refer to Fig. 4, Fig. 4 is that another embodiment of the present invention provides the light path schematic diagrams of export laser, by Fig. 4
It is found that be mutually perpendicular between the first reflecting mirror 64 and the second reflecting mirror 62, and final laser and initially opposite direction export, and
Also it is horizontally oriented export.Part similar to the above embodiments repeats no more.
Based on the above embodiment, in another embodiment of the invention, as shown in figure 5, Fig. 5 provides for the embodiment of the present invention
Reflection subassembly structural schematic diagram, may include:
Mirror assembly 6 includes the first reflecting mirror 62 and the second reflecting mirror 64, first reflecting mirror 62 and the second reflecting mirror
64 relative positions can refer to Fig. 3 and Fig. 4, wherein the first reflecting mirror 62 is fixed on fixed bracket 61, solid on the second reflecting mirror 64
By adjusting rod 63, adjusting rod 63 is also connected with the six-dimensional adjusting support for adjusting 64 pitch angle of the second reflecting mirror for fixed connection.
Six-dimensional adjusting support is a kind of tool that object can be adjusted from the upper and lower, different direction of front, rear, left and right six.?
After first reflecting mirror, 62 position is fixed, it is only necessary to the angle that the second reflecting mirror 64 is adjusted by six-dimensional adjusting support, it can be by second
Reflecting mirror 64 is adjusted to required angle, such as parallel with the first reflecting mirror 62 or vertical.
In another embodiment of the present invention, can also further include:
Six-dimensional adjusting support can rotate by the second reflecting mirror 64 respectively using X-axis, Y-axis, Z axis as rotation center and adjust described the
Two-mirror 64, and rotating adjusting angular range is -10 °~10 °.
Specifically, can using laser project direction as X-direction, horizontal plane in the direction of X-axis be Y-axis side
To vertical direction is Z-direction.
In practical applications, 64 position of the first reflecting mirror can be fixed in advance, such as with horizontal direction in 45 degree of angles
Mirror surface obliquely, and the direction that the second reflecting mirror 64 is set at the beginning just generally with 62 less parallel of the first reflecting mirror, that
, be finely adjusted by pitch angle of the six-dimensional adjusting support to the second reflecting mirror 64 second reflecting mirror 64 can be adjusted to and
One reflecting mirror 62 is parallel, and fine setting scope can be within -10 °~10 °.
This setup can greatly reduce the cumbersome journey adjusted between the first reflecting mirror 62 and the second reflecting mirror 64
Degree only needs to finely tune the second reflecting mirror 64 when carrying out shaping to semiconductor laser chip 1 every time.
But the implementation that six-dimensional adjusting support is respectively connected on two reflecting mirrors is also not precluded in the present invention.Cause
In actual operation, to fix the first reflecting mirror 62 and the second reflecting mirror 64, there may be various reasons, cannot steadily place, and
In the presence of inclination slightly, if then 62 angle of the first reflecting mirror is non-adjustable, it is likely that will affect measurement accuracy.Therefore, will
It is respectively provided with six-dimensional adjusting support on first reflecting mirror 62 and the second reflecting mirror 64, enhances the adjustability of reflecting mirror, is more advantageous to laser
The operation of shaping.
In addition, fine tuning is also not limited to the adjusting of two laser mirrors, as described above, between two reflecting mirrors
There are a variety of situations for relative angle, can be mutually perpendicular to, can also be parallel to each other, can also be other angles.It so can also be with
The adjustment that wide-angle between two reflecting mirrors is realized by six-dimensional adjusting support, so that a variety of relative angles may be implemented in two reflecting mirrors
The case where spending.In this regard, no longer specifically enumerating.
Based on above-mentioned any embodiment, it is illustrated below with a kind of specific structure of specific embodiment to reflection subassembly.
As shown in figure 5, the reflection subassembly can specifically include:
Fixed bracket 61 includes the vertical bar of upper top and lower bottom part and the connection upper top and lower bottom part;
Wherein, the first reflecting mirror 62 is fixed on lower bottom part, and mirror surface is in obliquely 45 ° of angles with horizontal plane, so that partly leading
The laser that volumetric laser chip 1 issues can be to reflex to after on 45 ° of incident angles to first reflecting mirror 62 straight up
Second reflecting mirror 64;
Second reflecting mirror 64 is arranged in the upper top, and can tune to mirror surface obliquely with horizontal plane in 45 °, so that by
The laser of first reflecting mirror 62 reflection is reflected with 45 ° of incident angles and from horizontal direction.
Specifically, it can be between the first reflecting mirror 62 and the second reflecting mirror 64 and orthogonal be also possible to be parallel to each other
's.For the embodiment that the first reflecting mirror 62 and the second reflecting mirror 64 are parallel to each other, Fig. 5 can be referred to, in Fig. 5, fixed bracket
61 include four vertical bars, and the first reflecting mirror 62 and the second reflecting mirror 64 are also approximately at the reflecting mirror of square, and laser is from four
It is horizontal between vertical bar to inject again horizontal export.But it is understood that fixation bracket and and reflecting mirror in the present embodiment
Between connection type, it is only of the invention that a kind of specifically implementation, other similar structure should also belong to this hair
It is numerous to list herein in bright protection scope.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with it is other
The difference of embodiment, same or similar part may refer to each other between each embodiment.For being filled disclosed in embodiment
For setting, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, related place is referring to method part
Explanation.
Claims (7)
1. a kind of semiconductor laser optical path adjusts equipment characterized by comprising for by the laser of semiconductor laser chip
The mirror assembly of encapsulating housing is exported in the horizontal direction;
Wherein, the semiconductor laser chip is fixedly connected with the bottom plate of the encapsulating housing, and the side plate of the encapsulating housing
It is structure as a whole with bottom plate;
The mirror assembly includes fixed bracket and at least two are arranged in reflecting mirror on the fixed bracket;Each institute
The relative angle stated between reflecting mirror is adjustable;The laser that the semiconductor laser chip issues is quasi- by fast axis collimation mirror and slow axis
After straight mirror, it can reflect between each reflecting mirror and project from horizontal direction.
2. adjustment equipment as described in claim 1, which is characterized in that the quantity of the reflecting mirror is two;And described in two
Reflecting mirror, which can tune to, to be parallel to each other.
3. adjustment equipment as claimed in claim 2, which is characterized in that two reflecting mirrors can tune between horizontal plane
Angle is 45 °.
4. adjustment equipment as described in claim 1, which is characterized in that the quantity of the reflecting mirror is two, and two described anti-
It penetrates mirror and can tune to and be mutually perpendicular to and angle is 45 degree between horizontal plane.
5. such as the described in any item adjustment equipment of Claims 1-4, which is characterized in that the reflecting mirror includes the first reflecting mirror
With the second reflecting mirror, wherein first reflecting mirror is fixed on the fixed bracket, is fixedly connected on second reflecting mirror
There is adjusting rod, the adjusting rod is also connected with the six-dimensional adjusting support for adjusting second mirror angle.
6. as claimed in claim 5 adjustment equipment, which is characterized in that the fixed bracket include upper top and lower bottom part and
Connect the vertical bar of the upper top and lower bottom part;
Wherein, first reflecting mirror is fixed on the lower bottom part, and mirror surface is in obliquely 45 ° of angles with horizontal plane, so that institute
The laser for stating semiconductor laser chip sending can be to reflect after on 45 ° of incident angles to first reflecting mirror straight up
To second reflecting mirror;
Second reflecting mirror is arranged in the upper top, and can tune to mirror surface obliquely with horizontal plane in 45 °, so that by institute
The laser of the first reflecting mirror reflection is stated with 45 ° of incident angles and is reflected from horizontal direction.
7. adjustment equipment as claimed in claim 5, which is characterized in that the six-dimensional adjusting support can be by second reflecting mirror point
Rotating adjusting and rotation adjusting angular range as rotation center using X-axis, Y-axis, Z axis is -10 °~10 °.
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CN201910243337.8A CN109768467A (en) | 2019-03-28 | 2019-03-28 | A kind of semiconductor laser optical path adjustment equipment |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110556706A (en) * | 2019-09-17 | 2019-12-10 | 深圳市柠檬光子科技有限公司 | Semiconductor laser of surface emitting laser chip and semiconductor laser coupling device |
CN110572211A (en) * | 2019-09-04 | 2019-12-13 | 苏州辰睿光电有限公司 | optical connection module and preparation method thereof |
CN112305682A (en) * | 2019-07-26 | 2021-02-02 | 山东华光光电子股份有限公司 | Flat plate type laser and method for improving optical power density |
CN113189780A (en) * | 2021-04-21 | 2021-07-30 | 吉林省长光瑞思激光技术有限公司 | Light path shaping system capable of realizing laser round and square spot change |
CN113206449A (en) * | 2021-04-21 | 2021-08-03 | 吉林省长光瑞思激光技术有限公司 | Semiconductor laser based on optics ladder distribution |
CN113764975A (en) * | 2020-05-27 | 2021-12-07 | 山东华光光电子股份有限公司 | Human eye safety type small-size VCSEL packaging structure and manufacturing method thereof |
WO2024120420A1 (en) * | 2022-12-09 | 2024-06-13 | 青岛海信激光显示股份有限公司 | Laser device, projection light source and projection apparatus |
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Cited By (8)
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CN112305682A (en) * | 2019-07-26 | 2021-02-02 | 山东华光光电子股份有限公司 | Flat plate type laser and method for improving optical power density |
CN110572211A (en) * | 2019-09-04 | 2019-12-13 | 苏州辰睿光电有限公司 | optical connection module and preparation method thereof |
CN110556706A (en) * | 2019-09-17 | 2019-12-10 | 深圳市柠檬光子科技有限公司 | Semiconductor laser of surface emitting laser chip and semiconductor laser coupling device |
CN113764975A (en) * | 2020-05-27 | 2021-12-07 | 山东华光光电子股份有限公司 | Human eye safety type small-size VCSEL packaging structure and manufacturing method thereof |
CN113189780A (en) * | 2021-04-21 | 2021-07-30 | 吉林省长光瑞思激光技术有限公司 | Light path shaping system capable of realizing laser round and square spot change |
CN113206449A (en) * | 2021-04-21 | 2021-08-03 | 吉林省长光瑞思激光技术有限公司 | Semiconductor laser based on optics ladder distribution |
CN113189780B (en) * | 2021-04-21 | 2023-03-24 | 吉林省长光瑞思激光技术有限公司 | Light path shaping system capable of realizing laser round and square spot change |
WO2024120420A1 (en) * | 2022-12-09 | 2024-06-13 | 青岛海信激光显示股份有限公司 | Laser device, projection light source and projection apparatus |
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