CN110556706A - Semiconductor laser of surface emitting laser chip and semiconductor laser coupling device - Google Patents
Semiconductor laser of surface emitting laser chip and semiconductor laser coupling device Download PDFInfo
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- CN110556706A CN110556706A CN201910877852.1A CN201910877852A CN110556706A CN 110556706 A CN110556706 A CN 110556706A CN 201910877852 A CN201910877852 A CN 201910877852A CN 110556706 A CN110556706 A CN 110556706A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 72
- 230000003287 optical effect Effects 0.000 claims abstract description 101
- 230000017525 heat dissipation Effects 0.000 claims abstract description 81
- 239000013307 optical fiber Substances 0.000 claims abstract description 49
- 238000009434 installation Methods 0.000 claims description 34
- 210000000988 bone and bone Anatomy 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
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- 230000004075 alteration Effects 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
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- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
The invention relates to a semiconductor laser of a surface emitting laser chip and a semiconductor laser coupling device thereof. The semiconductor laser comprises a plurality of surface-emitting laser chips, a semiconductor laser coupling device and a heat dissipation seat, wherein the surface-emitting laser chips are sealed and welded at one end of the heat dissipation seat and are integrally dissipated by the heat dissipation seat; the optical fiber is fixed at the other end of the radiator, the semiconductor laser coupling device is arranged on the radiating seat along the optical path between the surface-emitting laser chip and the optical fiber, and the emitted light of the surface-emitting laser chip is converted into the light emitted along the horizontal optical axis and coupled to the optical fiber, and is transmitted outwards by the optical fiber.
Description
Technical Field
The invention relates to the technical field of laser, in particular to a semiconductor laser of a surface-emitting laser chip and a coupling device thereof.
Background
in the world, the energy shortage arouses the energy-saving and emission-reducing consciousness of people in all countries in the world, and the laser which is in the mission of protecting environment and saving energy and reducing emission is gradually accepted and accepted by the society. New ways to save energy are being sought through various approaches, and as the cost of laser fabrication becomes lower and lower, lasers are beginning to be used in many fields.
the semiconductor LASER chip technology is continuously developed and diversified under the drive of requirements, the use scenes are more and more abundant, the traditional Edge-Emitting LASER chip has the characteristics of miniaturization, stable coherent light and narrow emission wavelength, and abundant use modes, namely, a single tube, a bar, a stack and a direct semiconductor LASER module are matured, but the chip also has a certain short plate, has strict requirements on water and dust prevention of the use environment, and the heat dissipation cost requirement of side heat dissipation is very high. The edge-emitting laser chip has an excitation region at the end face of the chip. Meanwhile, the novel surface-emitting laser chip module is gradually enriched, the chip surface of the surface-emitting laser chip is an excitation area, the light-emitting area is large, the single power is higher, the requirement on the environment is relatively reduced, but the difference of the chip structure makes the process and the structural mode of the cured edge-emitting laser device difficult to directly sleeve the laser device of the surface-emitting laser chip.
Disclosure of Invention
the technical problem to be solved by the invention is as follows: the utility model provides a semiconductor laser of surface emitting laser chip and coupling device thereof, solves current surface emitting laser chip light emitting area perpendicular to junction plane, need to detach the problem that the module just can couple into the optic fibre on water plane, has solved the problem that the module of detaching reduces the radiating efficiency simultaneously.
In order to solve the technical problems, the invention adopts the following technical scheme:
a semiconductor laser of a surface-emitting laser chip comprises a plurality of surface-emitting laser chips and a semiconductor laser coupling device; the semiconductor laser also comprises a heat dissipation seat, and the surface-emitting laser chip is sealed and welded at one end of the heat dissipation seat and is integrally dissipated by the heat dissipation seat; the optical fiber is fixed at the other end of the radiator, and the semiconductor laser coupling device is arranged on the radiating seat along the optical path between the surface-emitting laser chip and the optical fiber, so that the emitted light of the surface-emitting laser chip is converted into the light emitted along the horizontal optical axis and coupled to the optical fiber, and the light is transmitted outwards through the optical fiber.
Further, the size of the heat dissipation seat is matched with the optical path and the semiconductor laser coupling device; the surface-emitting laser chip, the laser coupling device and the optical fiber installation heat dissipation seat form a modular structure; processing a stepped groove at the welding position of the laser chip emitted on the radiating seat; a plurality of surface-emitting laser chips are aligned and sealed on the inclined surface of the stepped groove, and the assembly surface is vertical to the direction of the optical axis; the semiconductor laser further comprises an electrode assembly, wherein the electrode assembly is fixed with the surface-emitting laser chip in a matched mode through dispensing, and the heat dissipation seat is used for carrying out overall heat dissipation.
furthermore, the surface-emitting laser chip is welded on the heat dissipation seat through the heat sink in an auxiliary mode without being detached independently to serve as a heat dissipation module, or the surface-emitting laser chip is directly attached to the heat dissipation seat; the heat dissipation seat is a copper base.
In some embodiments, the semiconductor laser coupling device comprises a first reflector mounted on the heat sink and facing the surface-emitting laser chip, and an optical axis of the emitted light of the surface-emitting laser chip is reflected by the first reflector and then converted to advance along a horizontal direction;
The semiconductor laser coupling device comprises a collimating lens, the collimating lens is arranged on the heat dissipation seat and is positioned on the horizontal optical axis to collimate emitted light, and the emitted light continues to advance along the horizontal optical axis after being collimated;
The semiconductor laser coupling device comprises a second reflecting mirror, the second reflecting mirror is arranged on the heat dissipation seat and is positioned in the optical path, the reflected light after the reflection of the emitted light continues to advance along a horizontal optical axis in the other direction which is perpendicular to the original optical axis in the plane, and the direction of the reflected light is consistent with the direction of the optical fiber;
The semiconductor laser coupling device comprises a coupling mirror assembly, wherein the coupling mirror assembly is arranged on the heat dissipation seat and is positioned on the horizontal optical axis in the other direction, and the coupling mirror assembly couples the emitted light to the end part of the optical fiber.
In some embodiments, each surface-emitting laser chip corresponds to one first reflecting mirror, one collimating lens and one second reflecting mirror;
The first reflector is adjustably mounted on the heat dissipation seat so as to convert an optical axis of the emitted light of the surface-emitting laser chip into continuous advancing along the horizontal direction after the emitted light is reflected; the emitted light of the surface-emitting laser chip is divergent, the optical axis is horizontal after the emitted light is reflected by the first reflecting mirror, and the light beam is continuously divergent;
the semiconductor laser coupling device comprises a coupling mirror bracket arranged on a heat dissipation seat, and a coupling mirror assembly is fixed to the coupling mirror bracket through a medium;
The heat radiation seat is also provided with a structure positioning datum plane of a collimating lens and/or a second reflecting mirror and/or a coupling mirror bracket, and the structure positioning datum plane is used for positioning and installing the collimating lens, the second reflecting mirror and the coupling mirror bracket on the heat radiation seat;
The first reflector, the collimating lens, the second reflector and the coupling mirror assembly are sequentially arranged in an optical path between the surface-emitting laser chip and the optical fiber, emitted light of the surface-emitting laser chip is adjusted to be horizontal optical axis and coupled into the optical fiber, and the surface-emitting laser chip does not need to be arranged perpendicular to the optical axis.
In some embodiments, the first reflector is mounted on the heat sink in a position adjustable in multiple dimensions relative to the surface-emitting laser chip;
the first reflector is fixed on the multi-dimensional adjusting reflector bracket, and the multi-dimensional adjusting reflector bracket can be movably matched with the heat dissipation seat in a multi-dimensional manner;
The multi-dimensional adjusting reflector bracket adjusts the assembly distance and angle between the first reflector and the surface-emitting laser chip, the emitted light of the surface-emitting laser chip continues to advance along the horizontal optical axis through the reflection of the first reflector, and the light cannot diffuse to the heat dissipation seat and does not deviate from the optical axis when being transmitted to the coupling mirror assembly;
The multi-dimensional adjusting reflector bracket is movably arranged on the heat radiating seat through a fixing column, and the first reflector is fixed on the front side of the multi-dimensional adjusting reflector bracket and is opposite to the surface emitting laser chip; the bottom of the multi-dimensional adjusting reflector support is provided with an installation groove, the multi-dimensional adjusting reflector support is sleeved on the top of the fixed column through the installation groove, and the multi-dimensional adjusting reflector support can rotate around the fixed column and/or can be adjusted in a pitching mode in a multi-dimensional mode, so that the first reflector is correspondingly driven to rotate and/or be adjusted in a pitching mode.
in some embodiments, the fixing column is cylindrical, the bottom of the fixing column is fixed on the heat dissipation seat, and a pair of limiting bones are symmetrically arranged on the side wall of the fixing column in an outward extending mode; the length directions of the pair of limiting bones and the installation groove are consistent, and the limiting bones and the installation groove are inserted into the installation groove at intervals with preset activities reserved, and the length direction of the installation groove penetrates through the opposite side walls of the multi-dimensional adjusting reflector bracket; the shape of the mounting groove is matched with that of the fixing column, and the mounting groove forms an enclosing structure which is sleeved outside the cylinder and can be movably matched in a relatively multidimensional way; the contact surfaces of the top of the installation groove and the top of the fixed column are cambered surfaces, the multi-dimensional adjusting reflector bracket can be adjusted in a front-back inclined mode along the cambered surfaces so as to correspondingly adjust the pitching position of the first reflector, and the side face of the installation groove surrounding structure is used for limiting the inclined movement amount; the multi-dimensional adjusting reflector bracket rotates around the axial direction of the fixing column to realize deflection adjustment, so that the rotating position of the first reflector is correspondingly adjusted, and the pair of limiting bones are used for limiting the rotating movement amount; therefore, debugging of two dimensions of rotation and pitching of the first reflecting mirror is realized;
The top of the multidimensional adjusting reflector bracket is provided with a screw hole; the screw hole is a tapered hole; the fixing column is fixed on the top of the fixing column in a pressing mode through a screw with a spring washer, so that the screw is fixed in the vertical direction after the pitching direction is adjusted; the screw with the spring washer plays a role in preventing falling; the diameter of the spring washer is larger than that of the nut.
the invention also provides a semiconductor laser coupling device, which is used for adjusting the emission light of the surface-emitting laser chip to a horizontal optical axis and coupling the emission light into an optical fiber, and comprises a coupling mirror assembly, wherein the semiconductor laser coupling device comprises a first reflector which is arranged facing the surface-emitting laser chip, and the optical axis of the surface-emitting laser chip is converted to advance along the horizontal direction after the emission light of the surface-emitting laser chip is reflected by the first reflector; the emitted light of the surface-emitting laser chip is divergent, the optical axis is horizontal after the emitted light is reflected by the first reflecting mirror, and the light beam is continuously divergent;
The semiconductor laser coupling device comprises a collimating lens, the collimating lens is arranged on the horizontal optical axis to collimate emitted light, and the emitted light continues to advance along the horizontal optical axis after being collimated;
The semiconductor laser coupling device comprises a second reflecting mirror, wherein the second reflecting mirror reflects the emitted light and then reflects the light to continue to advance along a horizontal optical axis in the other direction perpendicular to the original optical axis in the plane, and the direction of the horizontal optical axis is consistent with the direction of the optical fiber;
the coupling mirror assembly is mounted on the horizontal optical axis in the other direction to couple the launch light to the end of the optical fiber.
in some embodiments, each surface-emitting laser chip corresponds to one first reflecting mirror, one collimating lens and one second reflecting mirror;
The first reflector is adjustably mounted on the heat dissipation seat so as to reflect the emitted light of the surface-emitting laser chip and then continue to move forward along the horizontal optical axis;
the semiconductor laser coupling device comprises a coupling mirror bracket, wherein a coupling mirror assembly is fixed to the coupling mirror bracket through a medium;
The first reflector, the collimating lens, the second reflector and the coupling mirror assembly are sequentially arranged in an optical path from the surface-emitting laser chip to the optical fiber, emitted light of the surface-emitting laser chip is adjusted to be horizontal optical axis and coupled into the optical fiber, and the surface-emitting laser chip is not required to be arranged perpendicular to the optical axis;
the first reflector, the collimating lens, the second reflector and the coupling mirror assembly are arranged on the same heat dissipation seat of the seal welding surface emission laser chip; the coupling mirror assembly is mounted to the heat sink through a coupling mirror bracket.
In some embodiments, the first reflector is mounted on the heat sink in a position adjustable in multiple dimensions relative to the surface-emitting laser chip;
the first reflector is fixed on the multi-dimensional adjusting reflector bracket, and the multi-dimensional adjusting reflector bracket can be movably matched with the heat dissipation seat in a multi-dimensional manner;
The multi-dimensional adjusting reflector bracket adjusts the assembly distance and angle between the first reflector and the surface-emitting laser chip, the emitted light of the surface-emitting laser chip continues to advance along the horizontal optical axis through the reflection of the first reflector, and the light cannot diffuse to the heat dissipation seat and does not deviate from the optical axis when being transmitted to the coupling mirror assembly;
The multi-dimensional adjusting reflector bracket is movably arranged on the heat radiating seat through a fixing column, and the first reflector is fixed on the front side of the multi-dimensional adjusting reflector bracket and is opposite to the surface emitting laser chip; the bottom of the multi-dimensional adjusting reflector bracket is provided with an installation groove, the multi-dimensional adjusting reflector bracket is sleeved at the top of the fixed column through the installation groove, and can rotate and/or adjust in a pitching mode around the fixed column in a multi-dimensional mode to correspondingly drive the first reflector to rotate and/or adjust in a pitching mode in a multi-dimensional mode;
The fixing column is cylindrical, the bottom of the fixing column is fixed on the heat dissipation seat, and a pair of limiting bones are symmetrically arranged on the side wall of the fixing column in an outward extending manner; the length directions of the pair of limiting bones and the installation groove are consistent, and the limiting bones and the installation groove are inserted into the installation groove at intervals with preset activities reserved, and the length direction of the installation groove penetrates through the opposite side walls of the multi-dimensional adjusting reflector bracket; the shape of the mounting groove is matched with that of the fixing column, and the mounting groove forms an enclosing structure which is sleeved outside the cylinder and can be movably matched in a relatively multidimensional way; the contact surfaces of the top of the installation groove and the top of the fixed column are cambered surfaces, the multi-dimensional adjusting reflector bracket can be adjusted in a front-back inclined mode along the cambered surfaces so as to correspondingly adjust the pitching position of the first reflector, and the side face of the installation groove surrounding structure is used for limiting the inclined movement amount; the multi-dimensional adjusting reflector bracket rotates around the axial direction of the fixing column to realize deflection adjustment, so that the rotating position of the first reflector is correspondingly adjusted, and the pair of limiting bones are used for limiting the rotating movement amount; therefore, debugging of two dimensions of rotation and pitching of the first reflecting mirror is realized;
The top of the multidimensional adjusting reflector bracket is provided with a screw hole; the screw hole is a tapered hole; the fixing column is fixed on the top of the fixing column in a pressing mode through a screw with a spring washer, so that the screw is fixed in the vertical direction after the pitching direction is adjusted; the screw with the spring washer plays a role in preventing falling; the diameter of the spring washer is larger than that of the nut.
the invention has the beneficial effects that:
The semiconductor laser coupling device couples the emitted light of the surface-emitting laser chip into the horizontal optical fiber, and the surface-emitting laser chip is directly arranged on the heat dissipation seat, so that the heat conduction efficiency is improved, the heat dissipation cost is greatly optimized, and the heat dissipation efficiency is higher.
furthermore, the surface-emitting laser chip corresponds to a reflector fixed on the multi-dimensional adjusting reflector bracket, errors are made up through the multi-dimensional adjusting reflector, the distance from the chip to the collimating lens can be greatly reduced, the width of the module is reduced, and the problem that the surface-emitting laser chip needs to be perpendicular to the optical axis is avoided.
the present invention is described in further detail below with reference to the attached drawing figures.
Drawings
Fig. 1 is a perspective view of a semiconductor laser of a surface-emitting laser chip according to an embodiment of the present invention.
fig. 2 is an exploded view of a semiconductor laser of a surface-emitting laser chip according to an embodiment of the present invention.
FIG. 3 is a schematic diagram of a fitting structure of a multi-dimensional adjusting reflector holder and a heat sink according to an embodiment of the invention.
Fig. 4 is a schematic diagram of the operation of the multi-dimensionally adjustable mirror support according to the embodiment of the present invention, wherein fig. 4(a) and 4(b) are schematic diagrams of different viewing angles, respectively.
Detailed Description
it should be noted that, in the present application, the embodiments and features of the embodiments may be combined with each other without conflict, and the present invention is further described in detail with reference to the accompanying drawings and specific embodiments.
referring to fig. 1-4, embodiments of the present invention relate to a semiconductor laser 100 of a surface-emitting laser chip and a semiconductor laser coupling device thereof. The semiconductor laser of the surface-emitting laser chip comprises a plurality of surface-emitting laser chips 2, a semiconductor laser coupling device, a heat dissipation seat 6, an electrode assembly 16 and an optical fiber 10. The surface-emitting laser chip 2 is sealed and welded at one end of the heat dissipation seat 6, and the electrode assembly 16 is also fixed with the chip 2 by dispensing and is subjected to integral heat dissipation by the heat dissipation seat 6. The optical fiber 10 is fixed at the other end of the heat sink 6, and the semiconductor laser coupling device is mounted on the heat sink 6 and arranged along the optical path between the surface-emitting laser chip 2 and the optical fiber 10, so as to convert the emitted light of the surface-emitting laser chip 2 into light emitted along the horizontal optical axis and coupled to the optical fiber 10, and the light is transmitted outwards by the optical fiber 10.
the semiconductor laser coupling device is used for adjusting the emission light of the surface-emitting laser chip 2 to a horizontal optical axis and coupling the emission light into the optical fiber 10. The surface emitting laser chip may be one of HCSEL, EEL, VCSEL.
The semiconductor laser coupling device mainly comprises a first reflector 3, a multi-dimensional adjusting reflector bracket 4, a fast axis collimating lens 5, a second reflector 7 and a coupling mirror assembly 9 which are sequentially arranged on an optical path 1 of a surface emitting laser chip 2. The first reflector 3, the collimating lens 5, the second reflector 7 and the coupling mirror assembly 9 are sequentially arranged in an optical path 1 between the surface-emitting laser chip 2 and the optical fiber 10, corresponding limiting structures are arranged on the heat dissipation seat and the supports 4 and 8 at a design end strictly according to an optical simulation result, and the surface-emitting laser chip 2 is sequentially assembled, so that emitted light of the surface-emitting laser chip 2 is adjusted to be horizontally coupled with an optical axis and enters the optical fiber 10, and the surface-emitting laser chip 2 does not need to be vertically arranged with the optical axis. The first reflector 3, the collimating lens 5, the second reflector 7 and the coupling mirror assembly 9 are arranged on the same heat dissipation seat 6 of the sealing surface emission laser chip 2; the coupling mirror assembly 9 is mounted to the heat sink by a coupling mirror bracket.
Each surface-emitting laser chip 2 corresponds to a first reflector 3 with multi-dimensional adjustment, a fast axis collimating lens (FAC) 5 and a second reflector 7. The light emitted by each surface-emitting laser chip 2 is reflected by the first mirror 3, enters the FAC 5 for collimation, then enters the coupling mirror assembly 9 by the second mirror 7, and then is coupled into the optical fiber 10. The heat sink 6 is partially plated with gold for soldering the chip 2, and the coupling mirror assembly 9 is mounted on the heat sink 6 through the coupling mirror bracket 8.
the heat dissipation seat 6 is made of a high-heat-conductivity material and used for mounting the chip 2 and dissipating heat of the chip 2; the optical path coupling device is also used for mounting elements of the semiconductor laser coupling device on the whole optical path, so that the coupling device is modularized, compact in structure, reduced in size and improved in heat dissipation efficiency. In a specific embodiment, the size of the heat sink 6 is adapted to the optical path 1 between the surface-emitting laser chip 2 and the optical fiber 10 and the semiconductor laser coupling device. As an example, the heat sink 6 is a copper base.
A stepped groove is processed at the welding position of the chip by the heat dissipation seat 6, and the surface-emitting laser chip 2 is installed on the side wall of the inclined edge of the stepped groove and back to the fast axis collimating lens 5. As an example, two (not limited to two) pieces of the surface-emitting laser chips 2 are aligned and sealed to the inclined side of the stepped groove. The chip 2 is welded to the copper base (heat dissipation seat 6) through the heat sink, and heat generated by the surface-emitting laser chip 2 can be directly transferred to the heat dissipation seat 6 through the heat sink to be uniformly heated and dissipated. And the heat dissipation module does not need to be detached independently. The heat transfer loss of the contact surface of the detachable module is reduced, and the heat dissipation efficiency is higher.
In other embodiments, the emission laser chip 2 can also be directly attached to the heat dissipation base 6, so that the heat conduction efficiency is improved, and the heat dissipation cost is greatly optimized.
the first reflector 3 can be installed towards the chip 2 in a multidimensional adjustment mode, the chip 2 emits light to be divergent, the position of the chip 2 is fixed, the first reflector 3 can be adjusted to a proper position in a multidimensional adjustment mode through rotation and/or pitching, and the light emitted by the surface-emitting laser chip 2 is reflected and diverged through the reflector 3, does not reach the heat dissipation seat 6, does not deviate from the center of the whole optical axis, and enables the emitted light to advance along the optical axis. Meanwhile, the deviation of the radiating seat 6 or the coupling mirror and other links can be compensated by the multidimensional adjustment of the section. Add between surface emission laser chip 2 and fast axle collimating lens 5 first speculum 3 has reduced chip 2 to the distance of fast axle collimating lens 5 greatly, has reduced the area of copper base module, reduces the module width, reduces the base material, practices thrift the cost, still avoids falling surface emission laser chip 2 and needs the problem perpendicular with the optical axis.
According to the invention, the emitting light direction of the chip 2 is adjusted by adding the group of first reflectors 3 between the surface emitting laser chip 2 and the FAC 5, so that the surface emitting laser chip 2 can be directly sealed and welded on the heat radiating seat 6, and the direct heat radiation is carried out through the base without arranging the surface emitting laser chip 2 to be vertical to the optical axis.
The first reflector 3 is fixed on a multidimensional adjusting reflector bracket 4, and the bracket 4 can be arranged on a heat radiating seat 6 in a multidimensional adjusting way, thereby realizing the multidimensional movement of the first reflector 3. The first reflector 3 can be adhered to the multi-dimensional adjusting reflector bracket 4 through glue, and is specifically arranged on the front side of the multi-dimensional adjusting reflector bracket 4 and opposite to the emission laser chip 2. The first reflector 3 is bonded on the multidimensional adjusting reflector bracket 4, so that a larger adjusting space can be provided during coupling adjustment, and the coupling precision is improved by matching with the second reflector 7.
referring to fig. 3-4 again, the bracket 4 is movably mounted on the heat sink 6 in multiple dimensions through the fixing post 11. A mounting groove 12 is inwards vertically formed in the bottom of the support 4, the inner wall of the top of the groove is an arc surface 14, an enclosing structure is formed around the mounting groove 12, and through notches are formed in the two sides of the side mounting groove 12, wherein the two sides of the side mounting groove penetrate through the support 4 in the length direction.
the fixing column 11 is cylindrical, a screw hole or a mounting hole is formed in the middle-folding axial direction or the top of the fixing column, and two opposite sides of the fixing column 11 extend outwards to form symmetrical vertical limiting bones 13. The contact surface of the top of the fixed column is a spherical top contact surface 15, namely an arc surface matched with the arc surface 14 of the inner wall of the top of the groove. Support 4 is to the cover locating fixed column 11 top down, and fixed column 11's cylinder external diameter and mounting groove 12 surround the structure adaptation, and certain rotation space and spacing cooperation are formed to a pair of vertical spacing bone 13 and the 12 both ends notch width adaptations of mounting groove. Specifically, fixed post top fixed contact surface is a spherical top contact surface 15 or cambered surface, and is in clearance fit each other with cambered surface 14 of the inner wall of mounting groove 12 top, can slope around the cambered surface, and the support surrounds the volume that the side of structure can be fine again and stops the removal. The fixed column 11 can also deflect in the axial rotation direction, and the two limit bones limit the movement amount, so that the debugging of two dimensions of rotation and pitching is realized, and a multi-dimensional adjustable module is formed. The assembly clearance between the fixed column 11 and the mounting groove 12 can control the size of the adjustable pitch angle.
The screw hole at the top of the multi-dimensional adjusting reflector bracket 4 is a tapered hole 17 which is slightly pressed and fixed by a thread glue and a spring piece screw. The screw bolt and the spring piece are pressed and fixed on the top of the fixed column through the threaded glue and the spring piece, so that after the pitching direction is adjusted, the screw 18 is still fixed according to the vertical direction and can be continuously locked downwards until the screw bolt and the spring piece are clamped and fixed in the axial screw hole or the mounting hole 19 of the fixed column. The spring piece screw 18 can play a role in preventing falling off, the diameter of the spring piece 21 is generally larger than that of a nut, the pressing area is larger, and the pressing force is more balanced. The spring piece 21 is a screw with a spring washer, and the spring washer is sleeved at the bottom of the nut for one circle.
A set of first reflecting mirror 3 is additionally arranged between the surface emitting laser chip 2 and the FAC 5, so that the surface emitting laser chip 2 can be directly sealed and welded on a heat dissipation base, the effect of direct heat dissipation can be achieved through the heat dissipation base 6, and emitted light is adjusted to be horizontal.
The assembly distance and the angle of the first reflector 3 and the chip 2 are adjusted by the multi-dimensional adjusting reflector support 4, so that the chip 2 is guaranteed to emit light and can be reflected out through the reflector 3 to continue to advance along the parallel optical axis, and meanwhile, the light is guaranteed not to diffuse to the heat dissipation seat 6 and not to deviate from the optical axis when being conducted to the FAC 5.
the structure of the multidimensional adjustment reflector bracket 4 is in spherical or cambered surface contact with the top of the fixed column arranged on the heat radiating seat 6, and is mutually sleeved, and the multidimensional adjustment can be carried out by matching with the limiting bone 13 of the fixed column on the heat radiating seat 6, but the adjustment cannot be excessive.
further, the heat sink 6 is a precision workpiece, and the coupling mirror support 8, the fast axis collimating lens 5 and the second reflecting mirror 7 are correspondingly formed with a positioning reference, such as a positioning groove or a positioning step, so as to mount the coupling mirror support 8, the fast axis collimating lens 5 and the second reflecting mirror 7 at proper positions on the optical path 1.
The first reflector 3 assembled on the multi-dimensional adjusting support is matched with the second reflector 7 in the light path, so that the adjustability of the whole light path is increased, and the optical fiber coupling efficiency is effectively ensured. The second reflector 7 is finally fixed on the heat radiation seat 6 through the ceramic piece and UV glue.
the coupling mirror assembly 9 is fixed to the coupling mirror holder 8 by a medium, aligned by a debugging station, and mounted on the heat sink 6 according to the position of the positioning optical fiber 10. Specifically, the coupling mirror assembly 9 is limited according to the structure of the coupling mirror bracket 8, and is fixed on the copper base (the heat dissipation base 6) through the ceramic sheet and the UV glue after adjustment. The addition of the coupling mirror assembly 9 greatly increases the application range of the coupling device of the laser diode and the semiconductor laser, and the coupling device can be applied to the optical path regardless of the surface-emitting laser chip with uniform emission angle or the surface-emitting laser chip with the fast and slow axis.
The optical path 1 of the embodiment of the present invention includes that the emitted light of the chip 2 is reflected along a horizontal optical axis by the reflector 3 on the front side of the chip 2, and is collimated and corrected by the fast axis collimating lens 5 in the back side direction of the chip 2, the emergent light is reflected by the second reflector 7, enters the first lens 91 of the coupling mirror assembly 9, is collected, and is further coupled by the second lens 90 of the coupling mirror assembly 9 and enters the incident end face of the optical fiber 10. The fast axis collimating lens 5, the second reflector 7 and the coupling mirror assembly 9 are all located in a horizontal light path, and the positions of the fast axis collimating lens, the second reflector 7 and the coupling mirror assembly 9 meet the requirement that the horizontal light reflected by the first reflector 3 is connected with the horizontal incident light between the end faces of the optical fibers to form the horizontal light path.
More specifically, in the whole optical path 1, the first reflector 3 of the semiconductor laser coupling device is mounted on the heat sink and faces the emission laser chip 2, and after the optical axis of the emission light 20 of the emission laser chip is reflected by the first reflector 3, the optical axis is converted to advance along the horizontal direction; the emitted light 20 of the surface-emitting laser chip 2 is divergent, the optical axis is horizontal after being reflected by the first reflector 3, and the light beam continues to diverge. The collimating lens 5 of the semiconductor laser coupling device is mounted on the heat dissipation seat 6 and is positioned on the horizontal optical axis to collimate the emitted light, and the collimated light continues to advance along the horizontal optical axis. The second reflector 7 of the semiconductor laser coupling device is mounted on the heat sink 6 and located in the optical path 1 to reflect the emitted light and then the reflected light continues to move along a horizontal optical axis in the other direction perpendicular to the original optical axis, wherein the direction of the horizontal optical axis is consistent with the direction of the optical fiber. And a coupling mirror assembly 9 of the semiconductor laser coupling device is arranged on the heat radiating seat 6 through a coupling mirror bracket 8 and is positioned on the horizontal optical axis in the other direction, and the emitted light is coupled to the end part of the optical fiber 10.
It is understood that the laser coupling device of the present invention may be a semiconductor laser of a single-tube or multi-tube surface emitting laser chip.
in the description of the present invention, it is to be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships illustrated in the drawings, and are used merely for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
in the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be a mechanical connection, and can also be an electrical connection or a connection capable of transmitting data; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
the use of the terms "a" or "an" and the like in the description or in the claims of the invention, include one or more of the two specifically identified, unless the context clearly dictates otherwise. Similarly, reference to "two" or "two" in the specification or claims includes two or more instances, unless explicitly stated to be the case for only two. Sometimes, words such as "plurality", "one or more" or "at least one" may be included in the claims and the description, however, in the absence of such a limitation, it is not meant and should not be construed as meaning, and it cannot be envisaged, that there are a plurality.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims; the scope of the invention is defined by the appended claims and equivalents thereof.
Claims (10)
1. a semiconductor laser of a surface-emitting laser chip comprises a plurality of surface-emitting laser chips and a semiconductor laser coupling device; the method is characterized in that: the semiconductor laser also comprises a heat dissipation seat, and the surface-emitting laser chip is sealed and welded at one end of the heat dissipation seat and is integrally dissipated by the heat dissipation seat; the optical fiber is fixed at the other end of the radiator, and the semiconductor laser coupling device is arranged on the radiating seat along the optical path between the surface-emitting laser chip and the optical fiber, so that the emitted light of the surface-emitting laser chip is converted into the light emitted along the horizontal optical axis and coupled to the optical fiber, and the light is transmitted outwards through the optical fiber.
2. A semiconductor laser as claimed in claim 1 wherein: the size of the heat dissipation seat is matched with the optical path and the semiconductor laser coupling device; the surface-emitting laser chip, the laser coupling device and the optical fiber installation heat dissipation seat form a modular structure; processing a stepped groove at the welding position of the laser chip emitted on the radiating seat; a plurality of surface-emitting laser chips are aligned and sealed on the inclined surface of the stepped groove, and the assembly surface is vertical to the direction of the optical axis; the semiconductor laser further comprises an electrode assembly, wherein the electrode assembly is fixed with the surface-emitting laser chip in a matched mode through dispensing, and the heat dissipation seat is used for carrying out overall heat dissipation.
3. a semiconductor laser as claimed in claim 1 wherein: the surface-emitting laser chip is welded on the heat dissipation seat through the heat sink in an auxiliary mode without being detached independently to serve as a heat dissipation module, or the surface-emitting laser chip is directly attached to the heat dissipation seat; the heat dissipation seat is a copper base.
4. A semiconductor laser as claimed in claim 1 wherein:
The semiconductor laser coupling device comprises a first reflector, the first reflector is mounted on the heat dissipation seat and faces the surface-emitting laser chip, and after the optical axis of the emitted light of the surface-emitting laser chip is reflected by the first reflector, the optical axis is converted to advance along the horizontal direction;
the semiconductor laser coupling device comprises a collimating lens, the collimating lens is arranged on the heat dissipation seat and is positioned on the horizontal optical axis to collimate emitted light, and the emitted light continues to advance along the horizontal optical axis after being collimated;
the semiconductor laser coupling device comprises a second reflecting mirror, the second reflecting mirror is arranged on the heat dissipation seat and is positioned in the optical path, the reflected light after the reflection of the emitted light continues to advance along a horizontal optical axis in the other direction which is perpendicular to the original optical axis in the plane, and the direction of the reflected light is consistent with the direction of the optical fiber;
The semiconductor laser coupling device comprises a coupling mirror assembly, wherein the coupling mirror assembly is arranged on the heat dissipation seat and is positioned on the horizontal optical axis in the other direction, and the coupling mirror assembly couples the emitted light to the end part of the optical fiber.
5. A semiconductor laser as claimed in claim 4 wherein: each surface-emitting laser chip corresponds to a first reflector, a collimating lens and a second reflector;
The first reflector is adjustably mounted on the heat dissipation seat so as to convert an optical axis of the emitted light of the surface-emitting laser chip into continuous advancing along the horizontal direction after the emitted light is reflected; the emitted light of the surface-emitting laser chip is divergent, the optical axis is horizontal after the emitted light is reflected by the first reflecting mirror, and the light beam is continuously divergent;
The semiconductor laser coupling device comprises a coupling mirror bracket arranged on a heat dissipation seat, and a coupling mirror assembly is fixed to the coupling mirror bracket through a medium;
The heat radiation seat is also provided with a structure positioning datum plane of a collimating lens and/or a second reflecting mirror and/or a coupling mirror bracket, and the structure positioning datum plane is used for positioning and installing the collimating lens, the second reflecting mirror and the coupling mirror bracket on the heat radiation seat;
the first reflector, the collimating lens, the second reflector and the coupling mirror assembly are sequentially arranged in an optical path between the surface-emitting laser chip and the optical fiber, emitted light of the surface-emitting laser chip is adjusted to be horizontal optical axis and coupled into the optical fiber, and the surface-emitting laser chip does not need to be arranged perpendicular to the optical axis.
6. a semiconductor laser as claimed in claim 5 wherein:
the first reflector is arranged on the heat dissipation seat relative to the surface-emitting laser chip in a position capable of being adjusted in a multi-dimensional mode;
the first reflector is fixed on the multi-dimensional adjusting reflector bracket, and the multi-dimensional adjusting reflector bracket can be movably matched with the heat dissipation seat in a multi-dimensional manner;
The multi-dimensional adjusting reflector bracket adjusts the assembly distance and angle between the first reflector and the surface-emitting laser chip, the emitted light of the surface-emitting laser chip continues to advance along the horizontal optical axis through the reflection of the first reflector, and the light cannot diffuse to the heat dissipation seat and does not deviate from the optical axis when being transmitted to the coupling mirror assembly;
the multi-dimensional adjusting reflector bracket is movably arranged on the heat radiating seat through a fixing column, and the first reflector is fixed on the front side of the multi-dimensional adjusting reflector bracket and is opposite to the surface emitting laser chip; the bottom of the multi-dimensional adjusting reflector support is provided with an installation groove, the multi-dimensional adjusting reflector support is sleeved on the top of the fixed column through the installation groove, and the multi-dimensional adjusting reflector support can rotate around the fixed column and/or can be adjusted in a pitching mode in a multi-dimensional mode, so that the first reflector is correspondingly driven to rotate and/or be adjusted in a pitching mode.
7. A semiconductor laser as claimed in claim 6 wherein:
the fixing column is cylindrical, the bottom of the fixing column is fixed on the heat dissipation seat, and a pair of limiting bones are symmetrically arranged on the side wall of the fixing column in an outward extending manner; the length directions of the pair of limiting bones and the installation groove are consistent, and the limiting bones and the installation groove are inserted into the installation groove at intervals with preset activities reserved, and the length direction of the installation groove penetrates through the opposite side walls of the multi-dimensional adjusting reflector bracket; the shape of the mounting groove is matched with that of the fixing column, and the mounting groove forms an enclosing structure which is sleeved outside the cylinder and can be movably matched in a relatively multidimensional way; the contact surfaces of the top of the installation groove and the top of the fixed column are cambered surfaces, the multi-dimensional adjusting reflector bracket can be adjusted in a front-back inclined mode along the cambered surfaces so as to correspondingly adjust the pitching position of the first reflector, and the side face of the installation groove surrounding structure is used for limiting the inclined movement amount; the multi-dimensional adjusting reflector bracket rotates around the axial direction of the fixing column to realize deflection adjustment, so that the rotating position of the first reflector is correspondingly adjusted, and the pair of limiting bones are used for limiting the rotating movement amount; therefore, debugging of two dimensions of rotation and pitching of the first reflecting mirror is realized;
The top of the multidimensional adjusting reflector bracket is provided with a screw hole; the screw hole is a tapered hole; the fixing column is fixed on the top of the fixing column in a pressing mode through a screw with a spring washer, so that the screw is fixed in the vertical direction after the pitching direction is adjusted; the screw with the spring washer plays a role in preventing falling; the diameter of the spring washer is larger than that of the nut.
8. A semiconductor laser coupling device for adjusting the emission light of a surface-emitting laser chip to a horizontal optical axis and coupling into an optical fiber, the semiconductor laser coupling device comprising a coupling mirror assembly, characterized in that:
the semiconductor laser coupling device comprises a first reflector, the first reflector is arranged facing the surface-emitting laser chip, and after the emitted light of the surface-emitting laser chip is reflected by the first reflector, the optical axis of the surface-emitting laser chip is converted to advance along the horizontal direction; the emitted light of the surface-emitting laser chip is divergent, the optical axis is horizontal after the emitted light is reflected by the first reflecting mirror, and the light beam is continuously divergent;
The semiconductor laser coupling device comprises a collimating lens, the collimating lens is arranged on the horizontal optical axis to collimate emitted light, and the emitted light continues to advance along the horizontal optical axis after being collimated;
the semiconductor laser coupling device comprises a second reflecting mirror, wherein the second reflecting mirror reflects the emitted light and then reflects the light to continue to advance along a horizontal optical axis in the other direction perpendicular to the original optical axis in the plane, and the direction of the horizontal optical axis is consistent with the direction of the optical fiber;
the coupling mirror assembly is mounted on the horizontal optical axis in the other direction to couple the launch light to the end of the optical fiber.
9. A semiconductor laser coupling device according to claim 8, wherein: each surface-emitting laser chip corresponds to a first reflector, a collimating lens and a second reflector;
The first reflector is adjustably mounted on the heat dissipation seat so as to reflect the emitted light of the surface-emitting laser chip and then continue to move forward along the horizontal optical axis;
the semiconductor laser coupling device comprises a coupling mirror bracket, wherein a coupling mirror assembly is fixed to the coupling mirror bracket through a medium;
The first reflector, the collimating lens, the second reflector and the coupling mirror assembly are sequentially arranged in an optical path from the surface-emitting laser chip to the optical fiber, emitted light of the surface-emitting laser chip is adjusted to be horizontal optical axis and coupled into the optical fiber, and the surface-emitting laser chip is not required to be arranged perpendicular to the optical axis;
the first reflector, the collimating lens, the second reflector and the coupling mirror assembly are arranged on the same heat dissipation seat of the seal welding surface emission laser chip; the coupling mirror assembly is mounted to the heat sink through a coupling mirror bracket.
10. a semiconductor laser coupling device according to claim 8, wherein:
The first reflector is arranged on the heat dissipation seat relative to the surface-emitting laser chip in a position capable of being adjusted in a multi-dimensional mode;
The first reflector is fixed on the multi-dimensional adjusting reflector bracket, and the multi-dimensional adjusting reflector bracket can be movably matched with the heat dissipation seat in a multi-dimensional manner;
the multi-dimensional adjusting reflector bracket adjusts the assembly distance and angle between the first reflector and the surface-emitting laser chip, the emitted light of the surface-emitting laser chip continues to advance along the horizontal optical axis through the reflection of the first reflector, and the light cannot diffuse to the heat dissipation seat and does not deviate from the optical axis when being transmitted to the coupling mirror assembly;
The multi-dimensional adjusting reflector bracket is movably arranged on the heat radiating seat through a fixing column, and the first reflector is fixed on the front side of the multi-dimensional adjusting reflector bracket and is opposite to the surface emitting laser chip; the bottom of the multi-dimensional adjusting reflector bracket is provided with an installation groove, the multi-dimensional adjusting reflector bracket is sleeved at the top of the fixed column through the installation groove, and can rotate and/or adjust in a pitching mode around the fixed column in a multi-dimensional mode to correspondingly drive the first reflector to rotate and/or adjust in a pitching mode in a multi-dimensional mode;
The fixing column is cylindrical, the bottom of the fixing column is fixed on the heat dissipation seat, and a pair of limiting bones are symmetrically arranged on the side wall of the fixing column in an outward extending manner; the length directions of the pair of limiting bones and the installation groove are consistent, and the limiting bones and the installation groove are inserted into the installation groove at intervals with preset activities reserved, and the length direction of the installation groove penetrates through the opposite side walls of the multi-dimensional adjusting reflector bracket; the shape of the mounting groove is matched with that of the fixing column, and the mounting groove forms an enclosing structure which is sleeved outside the cylinder and can be movably matched in a relatively multidimensional way; the contact surfaces of the top of the installation groove and the top of the fixed column are cambered surfaces, the multi-dimensional adjusting reflector bracket can be adjusted in a front-back inclined mode along the cambered surfaces so as to correspondingly adjust the pitching position of the first reflector, and the side face of the installation groove surrounding structure is used for limiting the inclined movement amount; the multi-dimensional adjusting reflector bracket rotates around the axial direction of the fixing column to realize deflection adjustment, so that the rotating position of the first reflector is correspondingly adjusted, and the pair of limiting bones are used for limiting the rotating movement amount; therefore, debugging of two dimensions of rotation and pitching of the first reflecting mirror is realized;
The top of the multidimensional adjusting reflector bracket is provided with a screw hole; the screw hole is a tapered hole; the fixing column is fixed on the top of the fixing column in a pressing mode through a screw with a spring washer, so that the screw is fixed in the vertical direction after the pitching direction is adjusted; the screw with the spring washer plays a role in preventing falling; the diameter of the spring washer is larger than that of the nut.
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| CN201910877852.1A CN110556706A (en) | 2019-09-17 | 2019-09-17 | Semiconductor laser of surface emitting laser chip and semiconductor laser coupling device |
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| CN201910877852.1A CN110556706A (en) | 2019-09-17 | 2019-09-17 | Semiconductor laser of surface emitting laser chip and semiconductor laser coupling device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113532637A (en) * | 2020-04-20 | 2021-10-22 | 山东华光光电子股份有限公司 | Adapter capable of monitoring numerical aperture and power of light spot and manufacturing and using method thereof |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004093971A (en) * | 2002-08-30 | 2004-03-25 | Furukawa Electric Co Ltd:The | Semiconductor laser apparatus, semiconductor laser module, and optical transmitter |
| CN1766687A (en) * | 2005-11-18 | 2006-05-03 | 中国科学院上海光学精密机械研究所 | Universal optical lens frame adjusting seat |
| CN102540472A (en) * | 2011-11-22 | 2012-07-04 | 北京凯普林光电科技有限公司 | Coupling system for coupling multi-path discrete semiconductor laser to single optical fiber |
| CN202888604U (en) * | 2012-08-06 | 2013-04-17 | 北京大族天成半导体技术有限公司 | Semiconductor laser device |
| DE102012000038A1 (en) * | 2012-01-03 | 2013-07-04 | Humboldt-Universität Zu Berlin | laser device |
| CN204165549U (en) * | 2014-11-05 | 2015-02-18 | 长安大学 | A kind of laser crown slope measuring instrument |
| CN205643844U (en) * | 2016-05-10 | 2016-10-12 | 重庆理工大学 | Optic fibre coupled linking device based on cassegrainian telescope |
| CN108169854A (en) * | 2017-12-27 | 2018-06-15 | 北京凯普林光电科技股份有限公司 | A kind of Space Coupling structure of more To encapsulation semiconductor laser |
| CN109768467A (en) * | 2019-03-28 | 2019-05-17 | 吉林省长光瑞思激光技术有限公司 | A kind of semiconductor laser optical path adjustment equipment |
| CN110235038A (en) * | 2017-01-31 | 2019-09-13 | 株式会社藤仓 | The manufacturing method of guiding device, laser module and guiding device |
| CN210838439U (en) * | 2019-09-17 | 2020-06-23 | 深圳市柠檬光子科技有限公司 | Semiconductor laser of surface emitting laser chip and semiconductor laser coupling device |
-
2019
- 2019-09-17 CN CN201910877852.1A patent/CN110556706A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004093971A (en) * | 2002-08-30 | 2004-03-25 | Furukawa Electric Co Ltd:The | Semiconductor laser apparatus, semiconductor laser module, and optical transmitter |
| CN1766687A (en) * | 2005-11-18 | 2006-05-03 | 中国科学院上海光学精密机械研究所 | Universal optical lens frame adjusting seat |
| CN102540472A (en) * | 2011-11-22 | 2012-07-04 | 北京凯普林光电科技有限公司 | Coupling system for coupling multi-path discrete semiconductor laser to single optical fiber |
| DE102012000038A1 (en) * | 2012-01-03 | 2013-07-04 | Humboldt-Universität Zu Berlin | laser device |
| CN202888604U (en) * | 2012-08-06 | 2013-04-17 | 北京大族天成半导体技术有限公司 | Semiconductor laser device |
| CN204165549U (en) * | 2014-11-05 | 2015-02-18 | 长安大学 | A kind of laser crown slope measuring instrument |
| CN205643844U (en) * | 2016-05-10 | 2016-10-12 | 重庆理工大学 | Optic fibre coupled linking device based on cassegrainian telescope |
| CN110235038A (en) * | 2017-01-31 | 2019-09-13 | 株式会社藤仓 | The manufacturing method of guiding device, laser module and guiding device |
| CN108169854A (en) * | 2017-12-27 | 2018-06-15 | 北京凯普林光电科技股份有限公司 | A kind of Space Coupling structure of more To encapsulation semiconductor laser |
| CN109768467A (en) * | 2019-03-28 | 2019-05-17 | 吉林省长光瑞思激光技术有限公司 | A kind of semiconductor laser optical path adjustment equipment |
| CN210838439U (en) * | 2019-09-17 | 2020-06-23 | 深圳市柠檬光子科技有限公司 | Semiconductor laser of surface emitting laser chip and semiconductor laser coupling device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113532637A (en) * | 2020-04-20 | 2021-10-22 | 山东华光光电子股份有限公司 | Adapter capable of monitoring numerical aperture and power of light spot and manufacturing and using method thereof |
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