CN110098559A - A kind of interior device and method collimated of semiconductor laser shell - Google Patents
A kind of interior device and method collimated of semiconductor laser shell Download PDFInfo
- Publication number
- CN110098559A CN110098559A CN201810083163.9A CN201810083163A CN110098559A CN 110098559 A CN110098559 A CN 110098559A CN 201810083163 A CN201810083163 A CN 201810083163A CN 110098559 A CN110098559 A CN 110098559A
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- laser
- semi
- detector
- reflecting
- lens
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
A kind of interior device and method collimated of semiconductor laser shell, it include: pedestal, laser enclosure, collimation lens, light reflecting mechanism, semi-transparent semi-reflecting lens, detector I and detector II, laser beam is issued by collimation lens after laser works, laser beam is become higher than the height of laser enclosure after reflecting by light reflecting mechanism and is projected with horizontal direction to semi-transparent semi-reflecting lens, the light beam directive detector I transmitted through semi-transparent semi-reflecting lens, hot spot is generated on the photosurface of detector I, the light beam directive detector II reflected through semi-transparent semi-reflecting lens, hot spot is generated on the photosurface of detector II.Adjust the angle of collimation lens, until the hot spot on detector I on detector II spot width and position it is all the same, so that progress beam collimation is become possible, simplify modular structure.Lens shift phenomenon caused by bring high temperature work step during avoiding laser from being welded in laser enclosure 1 again because adjusting outside laser enclosure.
Description
Technical field
The present invention relates to field of semiconductor photoelectron technique, and in particular to a kind of interior device collimated of semiconductor laser shell
And method.
Background technique
Since semiconductor laser has small in size, light-weight, high conversion efficiency, service life are long, wavelength cover is wide etc.
Advantage is widely used in the fields such as industry, medical treatment, communication and military affairs, gradually instead of traditional gas and solid state laser.In recent years
Come, with the development in the fields such as industrial processes, medical treatment, laser printing, the demand to high-power semiconductor laser is also year by year
Increase.
Currently, due to the progress of semiconductor laser material growth and manufacture craft level, single-chip power has reached closely
20W, but it is still unable to satisfy demand of the industrial production to high power laser light, high-power semiconductor laser exports in order to obtain,
It can only be realized by increasing the method for number of chips.It generallys use binding and closes the methods of number and space conjunction beam, number is closed in binding is
First by the laser coupled of one single chip output into an optical fiber, then multifiber is bundled and docks one in back
Coarse optical fiber makes their multiple light beams enter an optical fiber, becomes a luminous point, to be conducive to add at optical fiber rear
Add optical system.Here, the core diameter of coarse optical fiber is greater than the fibre diameter that multifiber bundles, although this method
Output power is improved, but is not improved power density.It is mainly to make light beam by optical system that beam technology is closed in space
Shaping, control, are overlapped multiple beam spatially, are finally coupled into an optical fiber, and this method is closed number relative to binding, do not increased
On the basis of adding core diameter, output power is improved, to improve the optical power density of fiber.
It closes beam technology and light beam is needed to carry out beam Propagation and precision mechanical system progress by complicated optical system in space
The control of optical device, to realize the coincidence of light beam spatially, the most common implementation method of the technology is first right on bottom plate
Optical path is adjusted, and package casing does not block collimating to light beam fast and slow axis of can be convenient in this way, after the completion of adjusting
Bottom plate is installed in shell again.It in this method, needs to be welded together with brazing metal between bottom plate and shell, COS is issued
Heat to reach pedestal by solder, radiating rate is slower.And the high temperature in welding process can be such that ultraviolet glue shrinks, thus shadow
Location consistency is rung, the best way is the collimation that speed Axial Bundle is carried out in shell.
204067849 U of Chinese patent literature CN proposes a kind of novel semiconductor laser case package structure, packet
Pedestal, shell are included, pedestal is equipped with the identical step of difference in height, makes direct chip attachment on pedestal；The upper surface of pedestal is equipped with
Rectangular groove, and shell bottom surface is equipped with a step, is welded into the step of shell in the rectangular recess of pedestal.Now
Beam collimation is carried out on pedestal, carries out the welding of shell after the completion of collimation again.The disadvantage of this method is that shell and pedestal
When carrying out high-temperature soldering, it will cause the heat shrinkable of ultraviolet glue, so as to cause Lens shift, influence the collimating effect of light beam.
Summary of the invention
To overcome the above deficiencies, the invention provides one kind, and beam collimation is realized in laser enclosure, keeps away
Exempt from high temperature work step and causes the device and method collimated in the semiconductor laser shell of Lens shift phenomenon.
The present invention overcomes the technical solution used by its technical problem to be:
A kind of interior device collimated of semiconductor laser shell, comprising:
Pedestal；
Laser enclosure is set to pedestal upper end, and laser, the laser connection are horizontally fixed in the laser enclosure
There is electrified wire；
Collimation lens is set to laser light-emitting surface front end；
Light reflecting mechanism, by laser issue optical path be horizontal laser reflection after be higher than laser enclosure height with
Horizontal direction projects outward；
Semi-transparent semi-reflecting lens are located on the outside of pedestal, and the optical path that reflecting surface and light reflecting mechanism reflect is arranged in 45 degree of angles；
Detector I is located on the outside of semi-transparent semi-reflecting lens, the optical path that photosurface face semi-transparent semi-reflecting lens transmit；And
Detector II is located at semi-transparent semi-reflecting lens front end, the optical path that photosurface face semi-transparent semi-reflecting lens reflect.
Preferably, above-mentioned light reflecting mechanism includes bracket, the right angled triangle prism I for being set to pedestal lower end and sets
It is placed in the right angled triangle prism II of pedestal upper end, the pedestal lower end is seated on the step in laser enclosure, described straight
The inclined-plane of the inclined-plane of angle triangular prism I and right angled triangle prism II is oppositely arranged and is parallel to each other, the right angled triangle
The inclined-plane of prism I is towards the light-emitting surface of laser, and the inclined-plane of the right angled triangle prism II is towards semi-transparent semi-reflecting lens.
It further include the positioning strip for being installed on pedestal upper end, the laser in order to ensure the light beam of laser sending is unbiased
Device shell is fixed on pedestal by threaded fastener, and its outboard end is in contact with positioning strip.
It further include being horizontally placed on pedestal outboard end and the optical path issued with laser parallel is led for the ease of adjusting
Rail I and it is set to I front end of guide rail and the guide rail II with the perpendicular connection of guide rail I, the detector I slides peace in left-right direction
Loaded on guide rail I, the detector II is slidably mounted on along the longitudinal direction on guide rail II.
In order to ensure light reflection, two right-angle sides and right angled triangle prism II of above-mentioned right angled triangle prism I
Two right-angle sides be coated with high-reflecting film respectively.
A kind of interior method collimated of semiconductor laser shell, includes the following steps:
A) before collimation lens being installed on the laser in laser enclosure；
B) the collimated lens of light that laser issues become a branch of parallel collimated light beam, and collimated light beam passes through light reflecting mechanism
It is projected outward with the height for being higher than laser enclosure with horizontal direction after reflection；
C) laser beam after reflecting is irradiated to semi-transparent semi-reflecting lens；
D) laser beam transmitted through semi-transparent semi-reflecting lens is irradiated to detector I, hot spot is generated on its photosurface, through semi-transparent semi-reflecting
The laser beam of mirror reflective is irradiated to detector II, generates hot spot on its photosurface；
E) adjust collimation lens angle, until detector I on hot spot on detector II spot width and position it is homogeneous
Together；
F) the fixed collimation lens of ultraviolet glue is utilized after adjusting.
The beneficial effects of the present invention are: issuing laser beam by collimation lens after laser works, laser beam passes through light
It becomes higher than the height of laser enclosure after reflecting mechanism reflection to project with horizontal direction to semi-transparent semi-reflecting lens, through semi-transparent semi-reflecting lens
The light beam directive detector I of transmission, generates hot spot on the photosurface of detector I, the light beam directive reflected through semi-transparent semi-reflecting lens
Detector II generates hot spot on the photosurface of detector II.The angle of collimation lens is adjusted, until the hot spot on detector I
With on detector II spot width and position it is all the same, it is at this time that collimation lens is fixed.It will by light reflecting mechanism
Light beam is exported out of laser enclosure, to monitor internal hot spot situation of change outside laser enclosure, is made in laser enclosure
Interior progress beam collimation becomes possible, simplifies modular structure.It is easy to use, avoid laser because being transferred in laser enclosure
Lens shift phenomenon caused by bring high temperature work step during section is welded to again in laser enclosure 1.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention；
In figure, 1. pedestal, 2. positioning strip, 3. laser enclosure, 4. laser, 5. electrified wire, 6. collimation lens, 7. bracket
8. I 12. semi-transparent semi-reflecting lens of step 9. right angled triangle prism, I 10. right angled triangle prism, II 11. guide rail, 13. guide rail II
14. I 15. detector II of detector.
Specific embodiment
1 the present invention will be further described with reference to the accompanying drawing.
A kind of interior device collimated of semiconductor laser shell, comprising: pedestal 1；Laser enclosure 3 is set on pedestal 1
It holds, is horizontally fixed with laser 4 in laser enclosure 3, laser 4 is connected with electrified wire 5；Collimation lens 6, is set to laser
4 light-emitting surface front end of device；Light reflecting mechanism, the optical path that laser 4 is issued be horizontal laser reflection after be higher than laser
The height of shell 3 is projected outward with horizontal direction；Semi-transparent semi-reflecting lens 12, are located at 1 outside of pedestal, and reflecting surface and light reflect
The optical path that mechanism reflects is in 45 degree of angle settings；Detector I 14, is located on the outside of semi-transparent semi-reflecting lens, and photosurface face is semi-transparent
The optical path that semi-reflective mirror 12 transmits；And detector II 15, it is located at semi-transparent semi-reflecting lens front end, photosurface face is semi-transparent semi-reflecting
The optical path that mirror 12 reflects.Laser 4 passes through collimation lens 6 and issues laser beam after working, laser beam passes through light reflecting mechanism
The height of laser enclosure 3 is become higher than after reflection to project with horizontal direction to semi-transparent semi-reflecting lens 12, it is saturating through semi-transparent semi-reflecting lens 12
The light beam directive detector I 14 penetrated, generates hot spot on the photosurface of detector I 14, the light reflected through semi-transparent semi-reflecting lens 12
Beam generates hot spot on the photosurface of detector II 15 to detector II 15.The angle of collimation lens 6 is adjusted, until visiting
Survey device I on hot spot on detector II spot width and position it is all the same, at this time by collimation lens 6 fixation.Pass through
Light reflecting mechanism exports light beam out of laser enclosure 1, so that monitoring internal hot spot outside laser enclosure 1 changes feelings
Condition makes the progress beam collimation in laser enclosure 1 become possible, simplifies modular structure.It is easy to use, avoid laser
Lens move caused by 4 bring high temperature work steps during be welded in laser enclosure 1 again because adjusting outside laser enclosure 1
Position phenomenon.
Embodiment 1:
Preferably, light reflecting mechanism can be following structure comprising bracket 7, the right angled triangle for being set to 7 lower end of bracket
Prism I 9 and the right angled triangle prism II 10 for being set to 7 upper end of bracket, 7 lower end of bracket are seated in laser enclosure 3
Step 8 on, the inclined-plane of right angled triangle prism I 9 and the inclined-plane of right angled triangle prism II 10 are oppositely arranged and mutually flat
Row, the inclined-plane of right angled triangle prism I 9 is towards the light-emitting surface of laser 4, and the inclined-plane of right angled triangle prism II 10 is towards partly
Saturating semi-reflective mirror 12.The inclined-plane back reflection directive right angled triangle prism II 10 of light beam directive right angled triangle prism I 9 it is oblique
Bracket 7 is put into laser when adjustment by face, the directive semi-transparent semi-reflecting lens 12 after the slant reflection of right angled triangle prism II 10
In shell 3, it is taken out from laser enclosure 3 after adjustment, it is easy to use.
Embodiment 2:
It further include the positioning strip 2 for being installed on 1 upper end of pedestal, laser enclosure 3 is fixed on pedestal 1 by threaded fastener, and
Its outboard end is in contact with positioning strip 2.Every time when adjustment, positioning is realized after laser enclosure 3 is contacted with positioning strip 2, thus
The light beam for ensuring that laser module to be adjusted issues every time is all with uniformity, avoid generating skew and can not be in detector I 14
And the case where on detector II 15 obtaining hot spot generation.
Embodiment 3:
It further include being horizontally placed on 1 outboard end of pedestal and the parallel guide rail I 11 of optical path issued with laser 4 and setting
In I 11 front end of guide rail and guide rail II 13 with the perpendicular connection of guide rail I 11, detector I 14 is slidably installed in left-right direction
In on guide rail I 11, detector II 15 is slidably mounted on along the longitudinal direction on guide rail II 13.Detector I 14 can be along guide rail I
11 sliding adjustment positions, detector II 15 is external along the sliding adjustment of guide rail II 13, to facilitate matching different size laser
Use.
Embodiment 4:
Two right-angle sides of right angled triangle prism I 9 and two right-angle sides of right angled triangle prism II 10 are coated with respectively
High-reflecting film.Reflecting rate of the laser beam on inclined-plane can be improved in high-reflecting film, avoids the meaningless loss of laser power.
The invention further relates to a kind of methods collimated in semiconductor laser shell, include the following steps:
A) before collimation lens 6 being installed on the laser 4 in laser enclosure 3；
B) the collimated lens 6 of light that laser 4 issues become a branch of parallel collimated light beam, and collimated light beam reflects machine by light
It is projected outward with the height for being higher than laser enclosure 3 with horizontal direction after structure reflection；
C) laser beam after reflecting is irradiated to semi-transparent semi-reflecting lens 12；
D) laser beam transmitted through semi-transparent semi-reflecting lens 12 is irradiated to detector I 14, generates hot spot on its photosurface, through half
The laser beam of 12 reflective of saturating semi-reflective mirror is irradiated to detector II 15, generates hot spot on its photosurface；
E) angle of collimation lens 6 is adjusted, until spot width and position on the hot spot and detector II 15 on detector I 14
It sets all the same；
F) the fixed collimation lens 6 of ultraviolet glue is utilized after adjusting.
The purpose for carrying out beam collimation in laser enclosure 3 is realized by the above method, is simplified modular structure, is mentioned
High efficiency.
Claims (6)
1. the device collimated in a kind of semiconductor laser shell characterized by comprising
Pedestal (1)；
Laser enclosure (3) is set to pedestal (1) upper end, is horizontally fixed with laser (4), institute in the laser enclosure (3)
It states laser (4) and is connected with electrified wire (5)；
Collimation lens (6) is set to laser (4) light-emitting surface front end；
Light reflecting mechanism, the optical path that laser (4) are issued are after horizontal laser reflection to be higher than laser enclosure (3)
Height is projected outward with horizontal direction；
Semi-transparent semi-reflecting lens (12) are located on the outside of pedestal (1), and the optical path that reflecting surface and light reflecting mechanism reflect is in 45 degree of folders
Angle setting；
Detector I (14) is located on the outside of semi-transparent semi-reflecting lens, the optical path that photosurface face semi-transparent semi-reflecting lens (12) transmit；With
And
Detector II (15) is located at semi-transparent semi-reflecting lens front end, the optical path that photosurface face semi-transparent semi-reflecting lens (12) reflect.
2. the device and method collimated in semiconductor laser shell according to claim 1, it is characterised in that: the light
Reflecting mechanism includes bracket (7), the right angled triangle prism I (9) for being set to bracket (7) lower end and is set on bracket (7)
The right angled triangle prism II (10) at end, bracket (7) lower end is seated on the step (8) in laser enclosure (3), described
The inclined-plane of the inclined-plane of right angled triangle prism I (9) and right angled triangle prism II (10) is oppositely arranged and is parallel to each other, described straight
Light-emitting surface of the inclined-plane of angle triangular prism I (9) towards laser (4), the inclined-plane court of the right angled triangle prism II (10)
To semi-transparent semi-reflecting lens (12).
3. the device and method collimated in semiconductor laser shell according to claim 1, it is characterised in that: further include peace
Positioning strip (2) loaded on pedestal (1) upper end, the laser enclosure (3) are fixed on pedestal (1) by threaded fastener, and
Its outboard end is in contact with positioning strip (2).
4. the device and method collimated in semiconductor laser shell as claimed in any of claims 1 to 3, feature
Be: further include be horizontally placed on pedestal (1) outboard end and the parallel guide rail I (11) of optical path that issues with laser (4) with
And it is set to guide rail I (11) front end and the guide rail II (13) with the perpendicular connection of guide rail I (11), the detector I (14) is along a left side
Right direction is slidably mounted on guide rail I (11), and the detector II (15) is slidably mounted on along the longitudinal direction on guide rail II (13).
5. the device and method collimated in semiconductor laser shell according to claim 2, it is characterised in that: the right angle
Two right-angle sides of triangular prism I (9) and two right-angle sides of right angled triangle prism II (10) are coated with high-reflecting film respectively.
6. a kind of method collimated in semiconductor laser shell, which comprises the steps of:
A) before collimation lens (6) being installed on the laser (4) in laser enclosure (3)；
B) the collimated lens of light (6) that laser (4) issues become a branch of parallel collimated light beam, and collimated light beam is anti-by light
It is projected outward with the height for being higher than laser enclosure (3) with horizontal direction after penetrating mechanism reflection；
C) laser beam after reflecting is irradiated to semi-transparent semi-reflecting lens (12)；
D) laser beam transmitted through semi-transparent semi-reflecting lens (12) is irradiated to detector I (14), and hot spot is generated on its photosurface, is passed through
The laser beam of semi-transparent semi-reflecting lens (12) reflective is irradiated to detector II (15), generates hot spot on its photosurface；
E) angle of collimation lens (6) is adjusted, until the spot width on the hot spot and detector II (15) on detector I (14)
And position is all the same；
F) fixed collimation lens (6) using ultraviolet glue after adjusting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810083163.9A CN110098559A (en) | 2018-01-29 | 2018-01-29 | A kind of interior device and method collimated of semiconductor laser shell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810083163.9A CN110098559A (en) | 2018-01-29 | 2018-01-29 | A kind of interior device and method collimated of semiconductor laser shell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110098559A true CN110098559A (en) | 2019-08-06 |
Family
ID=67442196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810083163.9A Withdrawn CN110098559A (en) | 2018-01-29 | 2018-01-29 | A kind of interior device and method collimated of semiconductor laser shell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110098559A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112909730A (en) * | 2019-11-19 | 2021-06-04 | 青岛海信激光显示股份有限公司 | Laser device |
| CN114413758A (en) * | 2022-01-24 | 2022-04-29 | 中国工程物理研究院机械制造工艺研究所 | Laser transmission positioning accuracy detection assembly |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1271933A (en) * | 1999-04-28 | 2000-11-01 | 松下电子工业株式会社 | Optical device |
| CN1719192A (en) * | 2005-06-23 | 2006-01-11 | 哈尔滨工业大学 | Bidimension photoelectric self collimating device based on optical length multiplication compensation method and its measuring method |
| CN104393486A (en) * | 2014-12-22 | 2015-03-04 | 厦门大学 | Adjustment device and method for optical path of external cavity semiconductor laser |
| CN106247948A (en) * | 2016-08-22 | 2016-12-21 | 上海交通大学 | Laser dithering differential compensation system based on disymmetry semi-transparent semi-reflecting lens |
-
2018
- 2018-01-29 CN CN201810083163.9A patent/CN110098559A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1271933A (en) * | 1999-04-28 | 2000-11-01 | 松下电子工业株式会社 | Optical device |
| CN1719192A (en) * | 2005-06-23 | 2006-01-11 | 哈尔滨工业大学 | Bidimension photoelectric self collimating device based on optical length multiplication compensation method and its measuring method |
| CN104393486A (en) * | 2014-12-22 | 2015-03-04 | 厦门大学 | Adjustment device and method for optical path of external cavity semiconductor laser |
| CN106247948A (en) * | 2016-08-22 | 2016-12-21 | 上海交通大学 | Laser dithering differential compensation system based on disymmetry semi-transparent semi-reflecting lens |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112909730A (en) * | 2019-11-19 | 2021-06-04 | 青岛海信激光显示股份有限公司 | Laser device |
| CN112909730B (en) * | 2019-11-19 | 2023-07-28 | 青岛海信激光显示股份有限公司 | Laser device |
| CN114413758A (en) * | 2022-01-24 | 2022-04-29 | 中国工程物理研究院机械制造工艺研究所 | Laser transmission positioning accuracy detection assembly |
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Application publication date: 20190806 |
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