CN104393486A - Adjustment device and method for optical path of external cavity semiconductor laser - Google Patents
Adjustment device and method for optical path of external cavity semiconductor laser Download PDFInfo
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Abstract
The invention provides an adjustment device and method for an optical path of an external cavity semiconductor laser, and relates to an external cavity semiconductor laser. The adjustment device comprises a semiconductor gain device, a collimating lens, a beam splitter, a light splitting element, a focusing lens, a CCD camera and a display screen. The adjustment method comprises the following steps: firstly, moving the beam splitter into the optical path; emitting laser light after lasing by the semiconductor gain device to the beam splitter after alignment; with the multistage diffraction of transmitted light on the light splitting element, feeding back primary diffracted light to a position near to a cavity surface of an internal cavity of the semiconductor gain device by regulating the angle of the light splitting element; focusing the reflected light passing through the beam splitter in the CCD camera by regulating the focusing lens, and regulating the size and the location of a feedback light spot by performing multidimensional state micro-adjustment on the collimating lens and the light splitting element; finally, enabling the feedback light spot to be completely overlapped with the cavity surface of the internal cavity, and then obtaining an optimum state of the optical path of the external cavity laser; and after the completion of optical path adjustment, removing the beam splitter from the optical path to avoid the output light loss of the external cavity laser.
Description
Technical field
The present invention relates to external-cavity semiconductor laser, especially relate to by microcell graphical analysis light path additional in the light path of external-cavity semiconductor laser, the face, inner chamber chamber of exocoel feedback light spot and semiconductor gain device is carried out to a kind of external-cavity semiconductor laser optical path adjustment device and the method for adjustment of observation and analysis.
Background technology
External-cavity semiconductor laser be feed back using external optical element as light, modeling element and the class LASER Light Source that makes, such LASER Light Source has the advantages such as spectral purity is high, excitation wavelength is tunable, efficiency is high, good reliability, has broad application prospects in fields such as optical communication, optical measurement, optical storages.Wherein, external feedback light is fed back to semiconductor gain device active region accurately, make it to interact with active medium, on the power output, stability etc. of external-cavity semiconductor laser, there is important impact.
The light path debugging of traditional external-cavity semiconductor laser, rely on the collimating status of direct visual perception light beam and the position of feedback light, by the multi-dimensional state inching to external optical element, external feedback light is overlapped with the face, inner chamber chamber of semiconductor gain device, thus cause the unexpected increase of output beam intensity, finally realize exocoel swash penetrate.In employing conventional method debugging external cavity optical path process, all cannot judge the size and particular location feeding back to hot spot on face, semiconductor gain inner cavity chamber, be difficult to the optimum state obtaining external cavity optical path, be difficult to realize the Best Coupling between interior exocoel.Therefore, develop a kind of convenient and practical external cavity optical path adjustment method, very important for the performance promoting external-cavity semiconductor laser.
Guo Shuguang (Guo Shuguang. compact photon source research. Nankai University Ph.D. Dissertation, April calendar year 2001,26-28) describe some about the work improved in laser performance and content, comprising: to the experimental study of the weak coupling Tunable External Cavity Semiconductor Laser of 80Onm wave band Littrow and Littman structure; The position error systematically analyzing external-cavity semiconductor laser tuning without mode skip structure is on the impact of tuning without mode skip scope and devise a set of external-cavity semiconductor laser of tuning without mode skip on a large scale experimental system; Analyze three class sine mechanisms in grating spectrum instrument and devise Littrow and the Littman external-cavity semiconductor laser mechanical tuning device that can realize wavelength linear scale; Adopt optical fiber Bragg raster as after external cavity feedback element to the performance study of tunable fiber grating external-cavity semiconductor laser; Littrow grating tuning technology is applied to and mixes Yb
3+characteristic in double-clad optical fiber laser; Describe the optical ballast of two types.And the experimental study part being given in 8OOnm wave band weak coupling grating external cavity semiconductor laser has the adjustment method referring to external-cavity semiconductor laser.
Summary of the invention
The object of the present invention is to provide a kind of external-cavity semiconductor laser optical path adjustment device and method of adjustment.
Described external-cavity semiconductor laser optical path adjustment device is provided with semiconductor gain device, collimating lens, beam splitter, beam splitter, condenser lens, ccd video camera and display screen;
Described semiconductor gain device, collimating lens, beam splitter, beam splitter arranged in co-axial alignment successively, condenser lens and ccd video camera are located on the reflected light path of beam splitter successively, and the output port of ccd video camera connects the input of display screen.
Described semiconductor gain device is the light emitting semiconductor device with the gain of light, includes but not limited to edge-emission semiconductor laser, super-radiance light emitting diode, image intensifer etc.
Described collimating lens is the optical mirror slip with optical alignment effect, and the beam collimation that semiconductor gain device can be sent is collimated light beam, includes but not limited to non-spherical lens, cemented doublet, objective lens etc.
Described beam splitter is that thickness is less than 1mm, incident beam can be divided into the optical element with transmission and reflection two-beam, the beam intensity ratio of described transmission and reflection two-beam preferably 1: 1; Described beam splitter is installed on an articles holding table, can shift out by shift-in in light path system, is moved into light path system, adjust and completely shifted out light path system, light loss when avoiding outside cavity gas laser to use when namely adjusting external cavity optical path.Because beam splitter thickness is less, shift-in can be ignored and shift out the impact of beam splitter on exocoel light path system.
Described beam splitter can adopt diffraction grating.
Described condenser lens is the optical mirror slip with optical focus effect, can focus the light beam in ccd video camera, includes but not limited to that focal length is the convex lens or planoconvex spotlight etc. of 5cm.
Described ccd video camera is positioned in the focus of condenser lens, makes the inner chamber chamber surface imaging of external cavity feedback hot spot and semiconductor gain device in ccd video camera surface.
Described display screen is connected with ccd video camera, and observable images in the image in external cavity feedback hot spot in ccd video camera and face, semiconductor gain inner cavity chamber on a display screen.
The face, inner chamber chamber of the hot spot after beam splitter feedback and semiconductor gain device can be reflected on a display screen by described external-cavity semiconductor laser optical path adjustment device intuitively, under the guidance of image on a display screen, collimation lens and beam splitter can carry out multi-dimensional state inching, thus regulate size and the position of feedback hot spot easily, feedback hot spot and face, semiconductor gain inner cavity chamber is finally made to overlap, obtain best outside cavity gas laser light path, thus improve the performance of external-cavity semiconductor laser.
Described external-cavity semiconductor laser optical path adjusting method, comprises the following steps:
Step 1: when carrying out light path adjustment to external-cavity semiconductor laser, moves in light path by translation or rotation articles holding table by beam splitter;
Step 2: semiconductor gain device is swashed the laser after penetrating and undertaken collimating rear directive beam splitter by collimating lens, now a part of laser intensity is through beam splitter directive beam splitter, another part laser intensity is by directive condenser lens after beam splitter reflection;
Step 3: transmitted light, on beam splitter, multiorder diffractive occurs, feeds back near face, semiconductor gain inner cavity chamber by regulating the angle of beam splitter by first-order diffraction light;
Step 4: the reverberation through beam splitter is focused in ccd video camera by regulating condenser lens, now can demonstrate the face, inner chamber chamber of semiconductor gain device and the external cavity feedback hot spot through beam splitter on a display screen, multi-dimensional state inching is carried out by collimation lens and beam splitter, regulate size and the position of feedback hot spot, finally make feedback hot spot and face, inner chamber chamber overlap completely, obtain the optimum state of outside cavity gas laser light path;
Step 5: after having adjusted external-cavity semiconductor laser light path, by translation again or rotate articles holding table beam splitter is shifted out light path, avoids the output light loss of outside cavity gas laser.
The present invention can be applied in the light path that Littrow, Li Teman grating external cavity semiconductor laser and the external-cavity semiconductor laser that is made up of other element use, for auxiliary its light path adjustment.
The present invention carries out imaging by the face, inner chamber chamber of ccd video camera to exocoel feedback light spot and semiconductor gain device, thus the size of feedback hot spot on face, semiconductor gain inner cavity chamber and position can be observed on a display screen, by carrying out multi-dimensional state inching to the optical element of composition exocoel, external feedback hot spot is made to feed back to active area accurately, make it to occur with active medium effectively to interact, be conducive to the performance such as power, stability improving external-cavity semiconductor laser.
The face, inner chamber chamber of external cavity feedback hot spot and semiconductor gain device can be reflected on a display screen by the present invention intuitively, be convenient to both adjustment overlap, contribute to the adjustment of external-cavity semiconductor laser light path, and then improve external cavity light feedback degree of regulation, improve external-cavity semiconductor laser performance.The present invention is simple, directly perceived, effective, has stronger practical value.
Accompanying drawing explanation
Fig. 1 is the structural representation of external-cavity semiconductor laser optical path adjustment device embodiment 1 of the present invention.
Fig. 2 is the schematic diagram that the present invention applies (embodiment 2) in the type grating external cavity semiconductor laser light path of Littrow.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Embodiment 1
See Fig. 1, external-cavity semiconductor laser optical path adjustment device embodiment is provided with semiconductor gain device 1, collimating lens 2, beam splitter 3, beam splitter 4, condenser lens 5, ccd video camera 6 and display screen 7.
Described semiconductor gain device 1, collimating lens 2, beam splitter 3, beam splitter 4 arranged in co-axial alignment successively, condenser lens 5 and ccd video camera 6 are located on the reflected light path of beam splitter 3 successively, and the output port of ccd video camera 6 connects the input of display screen 7.
Described semiconductor gain device 1, for having the light emitting semiconductor device of the gain of light, includes but not limited to edge-emission semiconductor laser, super-radiance light emitting diode, image intensifer etc.
Described collimating lens 2 is for having the optical mirror slip of optical alignment effect, and the beam collimation that semiconductor gain device 1 can be sent is collimated light beam, includes but not limited to non-spherical lens, cemented doublet, objective lens etc.
Described beam splitter 3 is less than 1mm for thickness, incident beam can be divided into the optical element with transmission and reflection two-beam, the beam intensity ratio of described transmission and reflection two-beam preferably 1: 1.
Described beam splitter 3 is installed on an articles holding table, can shift out by shift-in in light path system, is moved into light path system, adjust and completely shifted out light path system, light loss when avoiding outside cavity gas laser to use when namely adjusting external cavity optical path.Because beam splitter 3 thickness is less, shift-in can be ignored and shift out the impact of beam splitter 3 on exocoel light path system.
Described beam splitter 4 adopts diffraction grating.
Described condenser lens 5, for having the optical mirror slip of optical focus effect, can focus the light beam in ccd video camera 6, includes but not limited to that focal length is the convex lens or planoconvex spotlight etc. of 5cm.
Described ccd video camera 6 is positioned in the focus of condenser lens 5, makes the inner chamber chamber surface imaging of external cavity feedback hot spot and semiconductor gain device 1 in ccd video camera 6 surface.
Described display screen 7 is connected with ccd video camera 6, and on display screen 7, observable images in the image in external cavity feedback hot spot in ccd video camera 6 and face, semiconductor gain device 1 inner chamber chamber.
The face, inner chamber chamber of the hot spot after feeding back through beam splitter 4 and semiconductor gain device 1 can be reflected on display screen 7 by described external-cavity semiconductor laser optical path adjustment device intuitively, under the guidance of display screen 7 epigraph, collimation lens 2 and beam splitter 4 can carry out multi-dimensional state inching, thus regulate size and the position of feedback hot spot easily, feedback hot spot and face, semiconductor gain inner cavity chamber is finally made to overlap, obtain best outside cavity gas laser light path, thus improve the performance of external-cavity semiconductor laser.
The external-cavity semiconductor laser optical path adjusting method of the present embodiment, comprises the following steps:
Step 1: when carrying out light path adjustment to external-cavity semiconductor laser, moves in light path by translation or rotation articles holding table by beam splitter 3;
Step 2: semiconductor gain device 1 is swashed the laser after penetrating and is undertaken collimating rear directive beam splitter 3 by collimating lens 2, now a part of laser intensity is through beam splitter 3 directive beam splitter 4, and another part laser intensity is reflected rear directive condenser lens 5 by beam splitter 3;
Step 3: transmitted light, on beam splitter 4, multiorder diffractive occurs, feeds back near face, semiconductor gain device 1 inner chamber chamber by regulating the angle of beam splitter 4 by first-order diffraction light;
Step 4: the reverberation through beam splitter 3 is focused in ccd video camera 6 by regulating condenser lens 5, the face, inner chamber chamber of semiconductor gain device 1 and the external cavity feedback hot spot through beam splitter 4 now can be demonstrated on display screen 7, multi-dimensional state inching is carried out by collimation lens 2 and beam splitter 4, regulate size and the position of feedback hot spot, finally make feedback hot spot and face, inner chamber chamber overlap completely, obtain the optimum state of outside cavity gas laser light path;
Step 5: after having adjusted external-cavity semiconductor laser light path, by translation again or rotate articles holding table beam splitter 3 is shifted out light path, avoids the output light loss of outside cavity gas laser.
In enforcement, the hot spot of semiconductor gain device 1 luminescence after beam splitter 4 feeds back and face, semiconductor gain device 1 inner chamber chamber can be reflected on display screen 7 by this adjusting device intuitively, be convenient to both adjustment overlap, contribute to the light path adjustment of external-cavity semiconductor laser, and then improve external cavity light feedback degree of regulation, improve external-cavity semiconductor laser performance.
A kind of external-cavity semiconductor laser optical path adjustment device provided by the invention and method of adjustment can be applied in the light path that Littrow, Li Teman grating external cavity semiconductor laser and the external-cavity semiconductor laser that is made up of other element use, in order to improve the performance of external-cavity semiconductor laser.
Embodiment 2
As shown in Figure 2, similar to Example 1, its difference is that beam splitter adopts diffraction grating 41, apply the present invention to, in the light path of Littrow type grating external cavity semiconductor laser, mainly comprise: semiconductor gain device 11, collimating lens 21, beam splitter 31, diffraction grating 41, condenser lens 51, ccd video camera 61 and display screen 71.
Described semiconductor gain device 11, for having the light emitting semiconductor device of the gain of light, can select emitting cavity face to be coated with the edge-emission semiconductor laser diode of anti-reflection film.
Described collimating lens 21 is for having the optical mirror slip of optical alignment effect, and the beam collimation that semiconductor gain device 11 can be sent is collimated light beam, can select numerical aperture be 0.5 non-spherical lens.
Described beam splitter 31 is less than 1mm for thickness, incident beam can be divided into the optical element of the transmission and reflection two-beam with certain beam intensity ratio, and transmission and reflection beam intensity ratio can be selected to be 1:1.
Described beam splitter 31 is installed on a rotation articles holding table, can shift out by shift-in in light path system, when namely adjusting external cavity optical path, beam splitter 31 is moved into external cavity optical path, adjusts and completely shifted out light path system, light loss when avoiding outside cavity gas laser to use.Because beam splitter 31 thickness is less, shift-in can be ignored and shift out the impact of beam splitter 31 on exocoel light path system.
Described diffraction grating 41 divides the optical element of light action for having dispersion, its first-order diffraction light can feed back to semiconductor gain device along incident light direction.
Described condenser lens 51, for having the optical mirror slip of optical focus effect, can focus the light beam in ccd video camera 61, and focal length can be selected to be the convex lens of 5cm.
Described ccd video camera 61 is positioned in the focus of condenser lens 51, makes the inner chamber chamber surface imaging of external cavity feedback hot spot and semiconductor gain device 11 in ccd video camera 61 surface.
Described display screen 71 is connected with ccd video camera 61, and on display screen 71, observable images in the image in external cavity feedback hot spot in ccd video camera 61 and face, semiconductor gain device 11 inner chamber chamber.
A kind of external-cavity semiconductor laser optical path adjusting method that the present embodiment provides, comprises the following steps:
Step 1: when carrying out light path adjustment to Littrow type grating external cavity semiconductor laser, moves into beam splitter 31 in light path by rotating articles holding table.
Step 2; Semiconductor gain device 11 operating current is tuned up to its swash penetrate, send out laser and undertaken collimating rear directive beam splitter 31 by collimating lens 21, now a part of laser intensity is through beam splitter 31 directive diffraction grating 41, and another part laser intensity is reflected rear directive condenser lens 51 by beam splitter 31; Select thickness to be less than the beam splitter 31 of 1mm at this, after avoiding shifting out beam splitter 31, cause external cavity optical path to change.
Step 3: transmitted light, on diffraction grating 41, multiorder diffractive occurs, to feed back to first-order diffraction light near the face, inner chamber chamber of semiconductor gain device 11 by regulating the angle of diffraction grating 41.
Step 4: the reverberation through beam splitter 31 is focused in ccd video camera 61 by regulating condenser lens 51, the face, inner chamber chamber of semiconductor gain device 11 and the external cavity feedback hot spot through diffraction grating 41 now can be demonstrated on display screen 71, multi-dimensional state inching is carried out by collimation lens 21 and diffraction grating 41, diffraction pattern and face, inner chamber chamber can be made to overlap completely, obtain the optimum state of external cavity optical path.
Step 5: after having adjusted Littrow type grating external cavity semiconductor laser light path, shifting out light path by rotating articles holding table by beam splitter 31, avoiding the output light loss of outside cavity gas laser.
Claims (9)
1. an external-cavity semiconductor laser optical path adjustment device, is characterized in that being provided with semiconductor gain device, collimating lens, beam splitter, beam splitter, condenser lens, ccd video camera and display screen;
Described semiconductor gain device, collimating lens, beam splitter, beam splitter arranged in co-axial alignment successively, condenser lens and ccd video camera are located on the reflected light path of beam splitter successively, and the output port of ccd video camera connects the input of display screen.
2. a kind of external-cavity semiconductor laser optical path adjustment device as claimed in claim 1, it is characterized in that described semiconductor gain device is the light emitting semiconductor device with the gain of light, include but not limited to edge-emission semiconductor laser, super-radiance light emitting diode, image intensifer.
3. a kind of external-cavity semiconductor laser optical path adjustment device as claimed in claim 1, it is characterized in that described collimating lens is the optical mirror slip with optical alignment effect, the beam collimation that semiconductor gain device can be sent is collimated light beam, includes but not limited to non-spherical lens, cemented doublet, objective lens.
4. a kind of external-cavity semiconductor laser optical path adjustment device as claimed in claim 1, is characterized in that described beam splitter is that thickness is less than 1mm, incident beam can be divided into the optical element with transmission and reflection two-beam; Described beam splitter is installed on an articles holding table, can shift out by shift-in in light path system, is moved into light path system when namely adjusting external cavity optical path.
5. a kind of external-cavity semiconductor laser optical path adjustment device as claimed in claim 4, is characterized in that the beam intensity ratio of described transmission and reflection two-beam is 1: 1.
6. a kind of external-cavity semiconductor laser optical path adjustment device as claimed in claim 1, is characterized in that described beam splitter adopts diffraction grating.
7. a kind of external-cavity semiconductor laser optical path adjustment device as claimed in claim 1, it is characterized in that described condenser lens is the optical mirror slip with optical focus effect, can focus the light beam in ccd video camera, include but not limited to that focal length is convex lens or the planoconvex spotlight of 5cm.
8. a kind of external-cavity semiconductor laser optical path adjustment device as claimed in claim 1, is characterized in that described ccd video camera is positioned in the focus of condenser lens, makes the inner chamber chamber surface imaging of external cavity feedback hot spot and semiconductor gain device in ccd video camera surface.
9. an external-cavity semiconductor laser optical path adjusting method, it is characterized in that adopting as a kind of external-cavity semiconductor laser optical path adjustment device as described in arbitrary in claim 1 ~ 7, described method of adjustment comprises the following steps:
Step 1: when carrying out light path adjustment to external-cavity semiconductor laser, moves in light path by translation or rotation articles holding table by beam splitter;
Step 2: semiconductor gain device is swashed the laser after penetrating and undertaken collimating rear directive beam splitter by collimating lens, now a part of laser intensity is through beam splitter directive beam splitter, another part laser intensity is by directive condenser lens after beam splitter reflection;
Step 3: transmitted light, on beam splitter, multiorder diffractive occurs, feeds back near face, semiconductor gain inner cavity chamber by regulating the angle of beam splitter by first-order diffraction light;
Step 4: the reverberation through beam splitter is focused in ccd video camera by regulating condenser lens, now demonstrate the face, inner chamber chamber of semiconductor gain device and the external cavity feedback hot spot through beam splitter on a display screen, multi-dimensional state inching is carried out by collimation lens and beam splitter, regulate size and the position of feedback hot spot, finally make feedback hot spot and face, inner chamber chamber overlap completely, obtain the optimum state of outside cavity gas laser light path;
Step 5: after having adjusted external-cavity semiconductor laser light path, by translation again or rotate articles holding table beam splitter is shifted out light path, avoids the output light loss of outside cavity gas laser.
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| CN105529613A (en) * | 2016-01-15 | 2016-04-27 | 北京工业大学 | 852nm ultra-narrow line width external-cavity semiconductor laser |
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